CN101169592A - On-line spherical aberration measuring method - Google Patents
On-line spherical aberration measuring method Download PDFInfo
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- CN101169592A CN101169592A CNA2006101174275A CN200610117427A CN101169592A CN 101169592 A CN101169592 A CN 101169592A CN A2006101174275 A CNA2006101174275 A CN A2006101174275A CN 200610117427 A CN200610117427 A CN 200610117427A CN 101169592 A CN101169592 A CN 101169592A
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Abstract
The invention discloses an online method for measuring the spherical aberration, and includes the following steps: firstly, make a measuring mask or use the existing spherical aberration to locate each space periodic grating; secondly, move the array of a focal plane space image collecting detector to match with the position of the measured graph on the measuring mask; thirdly, a photoetching machine projects each vertical position on a silicon platform corresponding to the graph on the measuring mask to the array of the focal plane space image collecting detector; fourthly, the focal plane space image collecting detector collects the space image of the measured graph, converts the space image into electrical signals and transmits the electrical signals to a calculating module, and then the calculating module analyzes the electrical signals and figures out the spherical aberration. The invention can boost the monitoring of the spherical aberration for a lens system in the photoetching technology, thereby enhancing a guarantee to the technological precision and lowering the technological cost as well.
Description
Technical field
The present invention relates to the projection lithography equipment in a kind of semiconductor manufacturing facility, relate in particular to a kind of online spherical aberration measuring method based on the lens imaging system that can measure alignment precision.
Background technology
Along with development of semiconductor and processing and manufacturing development of technology, (CD Critical Dimension) is more and more littler for the critical size of semiconductor devices at present, and the difficulty of processing and manufacturing is also increasing.How better, the figure live width on the more accurate control silicon chip is that the light that improves photoetching process is good for.The spherical aberration of lens group (spherical aberration is called for short spherical aberration) can cause the pinpointed focus of the figure in different spaces cycle in the pattern on the silicon chip to dissimilate.Traditional camera lens spherical aberration is measured and must be found out pinpointed focus to the grating in one group of different spaces cycle by the mode of the silicon wafer exposure on imaging platform, and this method need be used scanning electron microscope, takies the production service time of this machine.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of online spherical aberration measuring method, and promptly a kind of need not measured the method for lens group spherical aberration by measuring the silicon chip live width.
For solving the problems of the technologies described above, online spherical aberration measuring method of the present invention, can be applicable to lens imaging system, this lens imaging system comprises: near the miter angle degree beam-splitting board main lens, the Fourier plane, miter angle degree reflective mirror, projecting lens, focal plane spatial picture are collected detector array, attached lighting source module and computing module and are formed, the inventive method comprises: step 1, making test mask plate, perhaps use existing spherical aberration test mask plate, find out each space periodic grating position; Step 2, mobile focal plane spatial picture are collected detector array, are complementary with resolution chart position on the test mask plate; Step 3, litho machine project to the focal plane spatial picture with the figure on the test mask plate to each upright position of silicon slice platform and collect detector array; Step 4, focal plane spatial picture are collected detector array and are collected the aerial image of described resolution chart, and are converted into electric signal, and are sent to computing module, and analytical solution is calculated spherical aberration.
The present invention is owing to improved the efficient of litho machine spherical aberration test to greatest extent, saved Measuring Time, improved testing efficiency, making under the precondition that does not influence the rate of capacity utilization increases the test duration frequency and becomes possibility, for in 90nm and the following more accurate photoetching process huge effect being arranged, can promote in the photoetching process monitoring greatly, thereby improve assurance, reduce the technology cost simultaneously craft precision to the lens combination spherical aberration.
Description of drawings
Fig. 1 is a kind of lens imaging device of wanting required for the present invention, comprises miter angle beam-splitting board, miter angle catoptron, projecting lens and focus planardetector array;
Fig. 2 is a kind of implementation synoptic diagram of the focus planardetector unit among Fig. 1 of the present invention, comprises amplifying lens, image-position sensor and shell;
Fig. 3 is the process flow diagram of the inventive method.
Embodiment
The present invention is further detailed explanation below in conjunction with accompanying drawing.
Need point out, the inventive method needs a kind of lens imaging system of request for utilization people invention, this system has applied for Chinese patent, application number: 2006100306370, this lens imaging system is collected modules such as detector array, attached lighting source by near the miter angle degree beam-splitting board group main lens, the Fourier plane, miter angle degree reflective mirror group, projecting lens, focal plane spatial picture and is formed.As shown in Figure 1, be this lens imaging system device, it comprises miter angle beam-splitting board, miter angle catoptron, projecting lens and focus planardetector array; Near the Fourier plane in the above-mentioned lens imaging system miter angle degree beam-splitting board group also comprises beam-splitting board, and effect is that the light distribution with the mask plate plane projects on the focus planardetector array; Also comprise beam-splitting board down, effect is that the light distribution on silicon chip plane projects on the focus planardetector array.Fig. 2 is a kind of implementation synoptic diagram of the focus planardetector unit among Fig. 1, and it comprises amplifying lens, image-position sensor and shell.
The effect of beam-splitting board is that reflected light to the silicon slice platform surface carries out beam split under the above-mentioned miter angle, and the effect of reflective mirror is the reflected light from the silicon slice platform surface that beam-splitting board branched away under the above-mentioned miter angle to be invested focal plane spatial through above-mentioned projecting lens list as detector array under the miter angle degree.Focal plane spatial is made up of a condenser lens and an image-position sensor as detector array, image-position sensor comprises any device that the light distribution conversion of signals can be become electric signal, as various electric charges coupling detectors (charge coupled device, CCD) or other detectors.Focal plane spatial has collection space as light distribution with light signal is converted to the function of electric signal as detector array.The focal plane is as the space distribution of the grating in the space distribution of the detector array different spaces cycle on should corresponding test mask plate.Described computing module according to actual conditions, can be the data processor of litho machine itself, also can be presentation manager independently, and in some way data is sent to the user of litho machine or litho machine.
The inventive method is applied on the said lens imaging system, utilize litho machine self exposure light wave to realize the resolution chart on the spherical aberration test mask board plane is projected on the silicon chip plane by a kind of lens combination, and will collect detector array from the aerial image that the reflected light on silicon chip plane projects to through a miter angle beam-splitting board and miter angle degree reflective mirror and projecting lens and list, as shown in Figure 1.This method is saved time with different focal length variations than traditional live width of passing through to measure on the silicon chip, and also can loosen the requirement of the flatness of silicon chip.
The inventive method comprises four steps in concrete enforcement, specifically can be referring to Fig. 3:
Step 1, making test mask plate perhaps use existing spherical aberration test mask plate, find out each space periodic grating position;
Step 2, mobile focus planardetector array are with the resolution chart location matches on the test mask plate;
Step 3, litho machine project to each upright position to silicon slice platform of the figure on the test mask plate on the focus planardetector array;
Step 4, detector are collected the aerial image of resolution chart, and are converted into electric signal, are sent to computing module, and analytical solution is calculated spherical aberration.
Above-mentioned step 3 specifically refers to: utilizes miter angle beam-splitter self-test mask plate plane in the future, and is sent to the silicon chip plane through projecting lens, and through the direct projection of aerial image of silicon chip plane reflection and be recorded on the electron detector of focal plane.Silicon slice platform carries out stepping respectively and stops one group of upright position.
Step 4 specifically refers to: to the upright position of above-mentioned each stop of silicon slice platform, the aerial image that one group of various space periodic grating on above-mentioned test mask plate comes through above-mentioned light path projection is collected as detector array in this focal plane; And data are sent to computing module, by the contrast of picture is obtained the pinpointed focus value with the relation of upright position, and by relatively calculating the spherical aberration of litho machine at the pinpointed focus of each space periodic, the calculating of spherical aberration is according to standard method, as [1.Zhiyong Wang, Ping Zheng, and Qiang Wu, " Tolerance on spherical aberration; anexperimental study with process windows ", Proceedings to ECS-ISTC2005, Photolithography.].
According to the specific embodiment of carrying out the inventive method, the grating of above-mentioned various space periodics, its minimum period should be more smaller divided by the value of numerical aperture than wavelength, but should be not less than 0.5 times wavelength divided by the value of numerical aperture.Its maximum space cycle should be than 2 times wavelength bigger divided by the value of numerical aperture, but should be not more than 3 times wavelength divided by the value of numerical aperture.Grating is minimum to be formed by being no less than two lines, and the length of its lines is 5 times of its width at least, and the ratio of its lines and distance between centers of tracks can be 1 to 1, also can be other ratios.
Reference focal length in the test structure is decided by a focal length than the lines of broad, and its width should be greater than exposure wavelength.
The light beam of litho machine self exposure, its wavelength comprises the exposure wavelength of all lithographic equipments in the present industry, as g-line (436nm), i-line (365nm), KrF (248nm), ArF (193nm), and F2 (157nm).
Litho machine that the present invention uses is meant and is used for SIC (semiconductor integrated circuit) printing usefulness, is applicable to various sizes, as 8 inches, 12 inches, 18 inches and more large-sized silicon chip manufacturing equipment.In sum, the inventive method does not need by silicon wafer exposure, and records the pinpointed focus of different spaces period measuring grating by one group of focal plane Image sensing, detector, and draws the situation of current camera lens spherical aberration by computational analysis.The inventive method has not only shortened spherical aberration test period greatly, and has guaranteed litho machine lens imaging precision and reliability.
Claims (2)
1. online spherical aberration measuring method, can be applicable to lens imaging system, this lens imaging system comprises: main lens, near the Fourier plane miter angle degree beam-splitting board, miter angle degree reflective mirror, projecting lens, the focal plane spatial picture is collected detector array, attached lighting source module and computing module are formed, described miter angle beam-splitting board is used for the reflected light on silicon slice platform surface is carried out beam split, described miter angle degree reflective mirror is used for that the reflected light from the silicon slice platform surface that described miter angle beam-splitting board is branched away is invested described focal plane spatial picture collection detector array through described projecting lens and lists, described focal plane spatial picture is collected detector array and is comprised a condenser lens and an image-position sensor, has collection space as light distribution with light signal is converted to the function of electric signal, described image-position sensor comprises any device that the light distribution conversion of signals can be become electric signal, described computing module, it can be the data processor of litho machine itself, also can be presentation manager independently, and data are sent to the user of litho machine or litho machine;
It is characterized in that, comprising:
Step 1, making test mask plate perhaps use existing spherical aberration test mask plate, find out each space periodic grating position;
Step 2, move described focal plane spatial picture and collect detector array, be complementary with resolution chart position on the described test mask plate;
Step 3, described litho machine project to the focal plane spatial picture with the figure on the test mask plate to each upright position of silicon slice platform and collect detector array;
Step 4, described focal plane spatial picture are collected detector array and are collected the aerial image of described resolution chart, and are converted into electric signal, and are sent to computing module, and analytical solution is calculated spherical aberration.
2. online spherical aberration measuring method according to claim 1 is characterized in that,
Projection refers in the described step 3: utilize described miter angle degree beam-splitting board self-test in the future mask plate plane, and be sent to the silicon chip plane through projecting lens, and pass through the direct projection of aerial image of silicon chip plane reflection and be recorded in focal plane spatial picture collection detector array listing, described silicon slice platform carries out stepping respectively and stops one group of upright position;
Described focal plane overlaps with the upright position on mask plate plane, to the scan-type litho machine, described focus planardetector can be installed on the platform with the synchronous scanning of mask plate platform, also can be installed on the common scanning platform that can hold mask plate and described focus planardetector simultaneously of a redesign.
The aerial image of collecting described resolution chart in the described step 4 refers to: to the upright position of described each stop of silicon slice platform, described focal plane spatial picture is collected detector array and is collected the aerial image that one group of various space periodic grating on above-mentioned test mask plate comes through above-mentioned light path projection; Finger is resolved in described analysis: by the contrast of picture is obtained the pinpointed focus value with the relation of upright position, and by relatively calculate the spherical aberration of litho machine at the pinpointed focus of each space periodic;
The grating of described various space periodics, it is minimum forms by being no less than two lines, and the length of its lines is 5 times of its width at least; Its minimum space cycle should be littler divided by the value of numerical aperture than wavelength, but should be not less than 0.5 times wavelength divided by the value of numerical aperture; Its maximum space cycle should be than 2 times wavelength big divided by the value of numerical aperture, but should be not more than 3 times wavelength divided by the value of numerical aperture; The lines of grating and the ratio of distance between centers of tracks can be 1 to 1, also can be other ratios;
Reference focal length in the test structure is decided by a focal length than the lines of broad, and its width should be greater than exposure wavelength;
The light beam that self exposes of described litho machine, its wavelength comprises the exposure wavelength of all lithographic equipments in the present industry;
Described focal plane spatial picture is collected the space distribution of the grating in the space distribution of the detector array different spaces cycle on should corresponding test mask plate.
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| CNB2006101174275A CN100501574C (en) | 2006-10-23 | 2006-10-23 | On-line spherical aberration measuring method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103048779A (en) * | 2011-10-14 | 2013-04-17 | 徕卡显微系统复合显微镜有限公司 | Method and apparatus for identifying and correcting spherical aberrations in a microscope imaging beam path |
| CN109540475A (en) * | 2018-11-16 | 2019-03-29 | 中国科学院光电研究院 | A kind of side pump amplifier thermal lens spherical aberration measurement device and method |
| CN110646168A (en) * | 2019-05-09 | 2020-01-03 | 苏州端景光电仪器有限公司 | Longitudinal spherical aberration measurement method of self-focusing lens |
| CN113204167A (en) * | 2021-04-21 | 2021-08-03 | 华虹半导体(无锡)有限公司 | Spherical aberration test mask and spherical aberration detection method of photoetching machine |
-
2006
- 2006-10-23 CN CNB2006101174275A patent/CN100501574C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103048779A (en) * | 2011-10-14 | 2013-04-17 | 徕卡显微系统复合显微镜有限公司 | Method and apparatus for identifying and correcting spherical aberrations in a microscope imaging beam path |
| CN103048779B (en) * | 2011-10-14 | 2017-03-01 | 徕卡显微系统复合显微镜有限公司 | Apparatus and method for spherical aberration in determination simultaneously correct microscope imaging optical path |
| CN109540475A (en) * | 2018-11-16 | 2019-03-29 | 中国科学院光电研究院 | A kind of side pump amplifier thermal lens spherical aberration measurement device and method |
| CN110646168A (en) * | 2019-05-09 | 2020-01-03 | 苏州端景光电仪器有限公司 | Longitudinal spherical aberration measurement method of self-focusing lens |
| CN110646168B (en) * | 2019-05-09 | 2021-12-14 | 苏州东辉光学有限公司 | Longitudinal spherical aberration measurement method of self-focusing lens |
| CN113204167A (en) * | 2021-04-21 | 2021-08-03 | 华虹半导体(无锡)有限公司 | Spherical aberration test mask and spherical aberration detection method of photoetching machine |
| CN113204167B (en) * | 2021-04-21 | 2023-12-05 | 华虹半导体(无锡)有限公司 | Spherical aberration test mask and spherical aberration detection method of photoetching machine |
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| CN100501574C (en) | 2009-06-17 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER NAME: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI |
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Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corp. Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Hua Hong NEC Electronics Co.,Ltd. |
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