CN101166063A - Integrated termination for eo modulator with RF signal monitoring functionality - Google Patents
Integrated termination for eo modulator with RF signal monitoring functionality Download PDFInfo
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- CN101166063A CN101166063A CNA2007101632263A CN200710163226A CN101166063A CN 101166063 A CN101166063 A CN 101166063A CN A2007101632263 A CNA2007101632263 A CN A2007101632263A CN 200710163226 A CN200710163226 A CN 200710163226A CN 101166063 A CN101166063 A CN 101166063A
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Abstract
The invention relates to RF termination for reducing electrical signal reflections at the end of transmission line electrodes on an electro-optical (EO) optical modulator. The disclosed termination incorporates a RF tap which permits the monitoring of the RF power and reflection conditions at the EO modulator. The integrated termination/tap can also be integrated with detection circuitry, such as RF diodes and passive components, giving improved performance, lower cost manufacturability as well as a more compact and efficient package.
Description
Cross reference to related application
[01] the present invention requires by reference it to be integrated with among the application at this in the priority of 60/862, No. 062 U.S. Patent application of submission on October 19th, 2006.
Technical field
[2] the present invention relates to a kind of integrated RF terminal that is used for electrooptic modulator, when being used for RF signal monitoring, this integrated RF terminal not only can be used as rf terminal but also can be used as RF power divider.
Background of invention
[3] for the proper operation electrooptic modulator, the minimum RF-reflective that input port (in most cases being input connector) is located is an important technology index.If RF-reflective is too high, can makes the fluctuation of service of radio-frequency signal source, or destroy the fidelity of signal owing to add anti-phase reflection artifact to signalling channel.Many reflection sources are arranged in encapsulation in the electrooptic modulator, but mainly produce by three positions, that is, rf terminal, input connector to the interface between the tablet and tablet to the interface between the modulator chip.
[4] major function of rf terminal is to mate with the impedance of electrooptic modulator electrode is electric on the working band scope, to guarantee to have at the input port place of electrooptic modulator the RF-reflective of minimum.Input connector is that the encapsulation electrooptic modulator is connected to extraneous interface.Tablet is the interface between modulator chip and the input connector.Rf terminal absorbs remaining radio-frequency power makes the work to electrooptic modulator produce minimum disturbance.
[5] if the impedance of the impedance of rf terminal and the electrooptic modulator on the working band scope is just in time mated, just there is not radio-frequency power reflected back rf inputs mouth.The most important characteristics of the chances are the rf terminal of the suitable impedance operator on the working band scope.As the good rf terminal that is used for electrooptic modulator, also to consider some other key character, handle (or dissipation) ability, temperature stability, easily processing, small size, low cost and low parasitic parameter etc. as radio-frequency power.
[6] the general signal of telecommunication in radio band is admitted to input connector.Tablet provides the conversion of the electricity between input connector and the electrooptic modulator chip, wherein, by electro optic effect, electric wave that the light wave of propagating in fiber waveguide is propagated in electrode or rf wave modulation.Untapped or remaining electricity or radio-frequency power are discharged to the rf terminal of electrode end by row.
[7] be the example of optical communication system 100 of the prior art of a simplification as shown in Figure 1, it adopts electrooptic modulator 107 of the present invention.Optical communication system 100 comprises reflector 110, receiver 109 and transmission medium 108, and this transmission medium 108 is connected to receiver 109 with reflector 110.Transmission medium is generally optical fiber.
[8] reflector 110 comprises a laser 104, and it comes work according to the laser control signal that receives from laser controller 103.
[9] lens fiber, or tail optical fiber 113 receiving optical signals 112.Lens fiber 113 and isolator 105 couplings are to reduce the optical reflection to laser 104.In one embodiment, optical isolator 105 combines with the optical reflection of further minimizing to laser 104 with the polarizer (not shown).In another embodiment, lens fiber 113 direct and electrooptic modulator 107 couplings, and by isolator 105.
[10] electrooptic modulator 107 receives the optical signalling 112 through input optical fibre 106 transmission from laser 104.Electrooptic modulator 107 comprises two waveguides 114 and 115.Controller 102 independent each waveguide 114 and 115 of control, or adopt a signal that they are controlled.At input 116 place's receiving optical signals 112 of electrooptic modulator 107, and in each waveguide 114 and 115, this optical signalling 112 is modulated.Being synthesized at the output 117 of electrooptic modulator 107 from the modulated light signal of each waveguide 114 and 115 is a modulated light signal.Electrooptic modulator 107 can be carried out amplitude modulation or phase modulation or its combination, carries out linear frequency modulation with the light to the light signal 112 that received.Be synthesized, modulated light signal is transferred to receiver 109. by optical fiber 108
[11] controller 102 receives from the digital data signal of data source 101 through transmission line 118 transmission, and response received signal and produce modulator control signal.This modulator control signal is introduced into electrooptic modulator 107 through lead 119 and 120.The predetermined modulation value of modulator control signal pilot light signal 112 and required modulated chirps parameter.For example, electrooptic modulator 107 receives modulator control signals, and correspondingly, each waveguide 114 changes with 115 relative propagation rate, to produce required modulated chirps parameter value.Single control signal can interact with waveguide 114 and 115 asymmetricly, and produces the fixedly value of warbling.
[12] controller 102 also adds one and is transferred to the offset signal of electrooptic modulator 107 through lead 121, so that its working point to be set.Offset signal can be that the environmental condition of presetting or response constantly changes generates, as temperature, bias drift or accumulate near the electro-optical transducer electric charge.
[13] in the electrooptic modulator 107 of above-mentioned prior art system, can add according to rf terminal disclosed here of the present invention, this is favourable, and additional radio frequency output monitoring line 122 can be connected to described rf terminal radio frequency and survey or observation circuit 123.
[14] Fig. 2 is the plan view from above of encapsulation electric light mach zhender (Mach-Zehnder) modulator of the prior art of the optical communication system 100 among Fig. 1.Optical cable 206 is communicated with light input end 216 light of modulator chip 207.Optical cable 206 will be provided to input 216 from the light signal of light source or laser (not shown).The optical signals first smooth Y-connector 225 is divided into two equal signals. Radio frequency electrode 226 and 227 forms electric transmission line, so that radiofrequency signal is sent to electric output port 202 from electrical input mouth 201.Radiofrequency signal is provided by outside source through being connected to the radio frequency interconnection plate 228 of electrical input mouth 201.Light signal is separately propagated along fiber waveguide 229 and 230, and is modulated by the electric field of radiofrequency signal.Radiofrequency signal is called as The interaction distance with the interaction of the light signal that separates or the distance of modulation, and is mainly determined by modulator design.
[15] lithium niobate that mainly contains two major types (LiNbO3) electric light Mach-Zehnder (MZ) modulator of Shi Yonging, X cuts the cut type with Z, and Fig. 2 only shows the X cut type.
[16] second smooth Y-connectors 231 separate the synthetic single modulated light signal of light signal with two.Be coupled to the optical cable 208 on the light output end 217 on the modulator chip 207, with synthetic light signal be sent to optical communication system the subsequent segment (not shown).
[17] modulator chip 207 comprises substrate 234, and in one embodiment, this substrate is made by X cut type lithium niobate (LiNbO3), about 1000 micron thickness.In another embodiment, modulator chip 207 is made by Z cut type lithium niobate (LiNbO3).
[18] fiber waveguide 229 and 230 can be made by titanium is diffused in the substrate 234.In one embodiment, make shaping or ditch (not shown) on substrate 234, titanium deposition in ditch heats up so that titanium is diffused into substrate then, thereby makes fiber waveguide 229 and 230. Fiber waveguide 229 and 230 about 7 microns wide, 3 microns dark.
[19] in a word, prior art rf terminal plate 235 is positioned at the electric output port of electrode 226 and 227 to absorb not use or remaining radio-frequency power.
[20] rf terminal plate 235 disclosed here according to the present invention also can comprise integrated RF monitoring output mouth 236, and the compact and easily processing of this port advantageously is applied in detection, monitoring or the feedback circuit.
[21] the Chang Yong rf terminal that is used for electrooptic modulator is lamped element and thick or thin film resistor.The lamped element resistance that is used for electrooptic modulator is mounted on surface normally, as shown in Figure 3.Thick or the thin film resistor as rf terminal is as shown in Figure 4 made by the hybrid circuit technology.
[22] Fig. 3 a and Fig. 3 b are respectively plan view from above and A-A ' profile, show the prior art rf terminal plate 335 corresponding to rf terminal plate 235 among Fig. 2.Rf terminal plate 335 is made on ceramic substrate 236 usually, and also similar other material of available physical and electric property makes.One short section of radio-frequency transmission line 337, or co-planar waveguide (CPW) or microstrip line extend to rf terminal 339 from the terminal input port 302 that is positioned at rf terminal plate 335 edges.Rf terminal 339 can be a resistance, or the complicated circuit of resistance and reactance passive component.What illustrate in this embodiment is the mounted on surface resistance of a lamped element form.Grounding electrode 338 is connected to plate 341 electrical ground by through hole 340.The electric output port 202 of the modulator chip 207 among Fig. 2 generally is connected by gold thread with electrical connection between the terminal input port 302.
[23] major defect of lamped element resistance is to need other soldering and may have high parasitic microwave parameters.
[24] Fig. 4 a and Fig. 4 b are respectively the vertical view and the cutaway views of the alternative form of rf terminal plate 235 among Fig. 2.This rf terminal plate 435 except rf terminal 339 to Fig. 3 a in end plaste have similar element.Rf terminal 439 is the thin or thick film resistors that are connected between rf terminal line 437 and the grounding electrode 438.Rf terminal also can be formed by the complicated circuit of the thin or thick thin-film component of resistance and reactance.Grounding electrode 438 is connected with plate 441 electrical ground by through hole 440.The electric output port 202 of the modulator chip 207 of Fig. 2 generally is connected by gold thread with electrical connection between the terminal input port 402.
[25] as shown in Figure 4, thick or thin film resistor as rf terminal can make with the hybrid circuit technology, compare lamped element resistance, this resistance is easy to big capacity production, low, the easy processing of cost, good reproducibility, size is little, but, obtain a good impedance matching but be difficult on the perception electricity bandwidth.
[26] shape of thick or thin film terminal has great influence to its frequency characteristic and intrinsic ghost effect.Rf terminal is not only the radio-frequency power absorber, also be the electrooptic modulator electrode and electrical ground between converting member.Different geometries greatly influences terminal impedance coupling, particularly during the radio-frequency (RF) impedance when the length of final element and size enough greatly consequently influence at high frequency.Taper is the ideal form of electromagnetic wave conversion.In the embodiment of Fig. 5, the electricity/radio frequency converter between the transmission line of two electricity/radiofrequency characteristicses with a great difference is designed to taper.
[27] Fig. 5 is the vertical view of the prior art of the another kind of form of rf terminal plate 435 among Fig. 4 a.Radio-frequency transmission line 537 extends to rf terminal 539 from terminal input port 502, and described rf terminal is the thin or thick film resistance with distribution impedance.The rf terminal 539 of taper, a narrow end that is positioned at rf terminal line 537, wide one is connected to grounding electrode 538.The conical surface of trapezoidal rf terminal 539 can be linear, twice, index or other gradient ramp guaranteeing the mean dissipation of radio-frequency power, thereby makes the RF-reflective minimum.
[28] in optical fiber telecommunications system, the general structure that is used for the front-end radiofrequency signal sniffer of electrooptic modulator comprises the RF power divider/coupler that can obtain from market that is positioned at electrooptic modulator input connector the place ahead.In this was used, coupler had effectively high coupling ratios usually, that is to say, the major part of radio-frequency power enters electrooptic modulator by the main channel, had only the radio-frequency power of sub-fraction (for example 1%) to enter coupling channel, was used to monitor radiofrequency signal.This sub-fraction radio-frequency power that is picked up by coupling channel is via the radio frequency connector on radio frequency distributor/coupler, and is admitted to that radiofrequency signal is surveyed or the input port of observation circuit.Then, the taper radiofrequency signal is detected by one (single type) or two (balanced type) rf diodes, and the signal of being surveyed can be used as the input signal of radiofrequency signal detection circuit.
[29] major defect of this device is that extra radio-frequency power loss and volume is big.By before the radio-frequency modulator, some radio-frequency powers are owing to tap is lost at input signal.Extra distributor/coupler needs bigger space, and processing cost is increased.
[30] for the electrooptic modulator in the optical fiber telecommunications system, a kind of device of attempting to solve the power loss problem is a rear end radio frequency detecting strategy.RF power divider/coupler is positioned at the output port of radio-frequency modulator.In this was used, coupler also had effectively high coupling ratios usually, that is to say, the major part of radio-frequency power enters electrooptic modulator by the main channel, had only the radio-frequency power of sub-fraction (for example 1%) to enter coupling channel.When the untapped radiofrequency signal of coming out from electrooptic modulator is admitted to the input of radio frequency distributor/coupler, the major part of radio-frequency power enters big capacity radio-frequency resistance terminal, common 50 ohm by the main channel.This sub-fraction radio-frequency power that is picked up by coupling channel is admitted to that radiofrequency signal is surveyed or the input port of observation circuit, and at this port, the taper radiofrequency signal can be detected by one (single type) or two (balanced type) rf diodes.
[31] adopt mixing PCB technology, also the radio frequency detection circuit that comprises rf diode and passive component can be integrated in the rf terminal plate on the ceramic substrate.
[32] in the foregoing description, monitoring needs a large amount of near the radio frequency environment of electrooptic modulator and may very expensive parts, and as RF power divider/coupler and subsidiary connector, these parts itself may be spurious impedance source and reflection sources.
Summary of the invention
[33] the purpose of this invention is to provide a kind of being integrated on the same chip, have the terminal of the radio frequency tap that is used to monitor, thereby obtain the improvement performance on the broad modulation band.
[34] therefore, the present invention relates to a kind of rf terminal with built-in monitoring port, this port can be used for optimizing the performance of electrooptic modulator or similar device under compact and low parasitic configuration.
[35] this invention relate to a kind of rf terminal on the other hand based on distributed resistance, this resistance has a specific shape that the input impedance of rf terminal and the output impedance of monitoring port can be regulated according to concrete needs.
Description of drawings
[36] hereinafter with reference to the accompanying drawings the present invention is carried out more detailed introduction, accompanying drawing is depicted as preferred implementation, wherein:
[37] Fig. 1 is the schematic block diagram of the optical communication system of prior art, and described system comprises laser diode, external modulator and photoelectric detector diode, is well-known in the field of this system transmitting optical signal in optical fiber or similar fiber waveguide;
[38] Fig. 2 shows encapsulation electric light (EO) modulator of typical prior art, comprises modulator chip, input interconnection and radio frequency (RF) terminal;
[39] Fig. 3 a and 3b are respectively the plane graph and the profile of prior art, show the lamped element resistor that is generally mounted on surface that is used for electrooptic modulator;
[40] Fig. 4 a and 4b are respectively the plane graph and the profile of prior art, show as the thick film of rf terminal or the resistor of film;
[41] Fig. 5 is the plane graph of the taper of prior art, and this taper is used to have the electricity/radio frequency conversion between the transmission line of two kinds of distinct electricity/radiofrequency characteristicses;
[42] Fig. 6 is according to the RF signal monitoring circuit that is used for the equivalence of electrooptic modulator of the present invention;
[43] Fig. 7 for according to of the present invention be incorporated into one in the element rf terminal and the plane graph of RF power divider; And
[44] Fig. 8 is the plane graph of trapezoidal profile resistance, and it has shown design size.
Embodiment
[45] the present invention described herein is integrated into rf terminal and RF power divider resistance in the element.Main purpose is to make integrated component be integrated into rf terminal, the outstanding radiofrequency characteristics that makes it have the low radio frequency reflection and hang down parasitic parameter at working frequency range.As integrated terminal resistance, it also can be used as radio-frequency power/voltage divider.Except superior electrical characteristics and radio-frequency performance, other advantage of such device is easy to design in addition, volume is little, easy production, good temperature stability and low cost.
[46] the optimization improvement project that has rf terminal and RF signal monitoring simultaneously illustrates as equivalent electric circuit in Fig. 6.Remaining radio-frequency power enters into radio frequency chip 651 by input port 652 from the EO modulator, is transmitted to radio-frequency power/voltage divider 655 from input port 652.RF power distributor in this configuration is made up of two resistance 656,657 usually, and the ratio between the resistance 656 and 657 is according to needed minute ad valorem or apportionment ratio decision.The remaining RF power of tap is from 658 outputs of monitoring output mouth.RF terminal resistance 653 is connected between input port 652 and the earth terminal 654.
[47] because RF chip 651 is connected to the electric transmission line output electrode of EO modulator, so the remaining RF power of EO modulator can not cause the extra RF power loss of EO modulator.Two resistance 656,657 of the RF power distributor 655 of RF power monitor can be lamped element or thin/thick-film resistor, and are integrated on the same pcb board together with the RF signal monitoring circuit with RF terminal resistance 653.Therefore, this design can reduce the size and the production cost of parts greatly.
[48] yet, in described scheme, rf terminal resistance 653 and the RF power distributor 655 that comprises resistance 656,657 are discrete element but parallel connection, as shown in Figure 6.These two elements to electricity /the RF performance has distinct requirement.RF terminal resistance 653 is designed to finish matched well with input port 652 at working band usually, and comprise resistance 656,657 RF power distributor 655 has the requirement of himself, for example stable recall rate (pickoff ratio), is easy to adjust or be provided with resistance value and is easy to the suitable source impedance at monitoring output mouth 658 places is offered monitor diode or other electronic components.In circuit, wideband RF Terminal Design is become and in parallel being difficult to of high-quality RF power distributor.
[49] Fig. 7 shows the plan view from above of integrated RF end plaste 735.Remaining RF power from EO modulator (not shown in the diagram) is input to the input port 702 that is connected with radio-frequency transmission line 737.Generally, connect EO modulator electricity output electrode and adopt multi-thread connection to RF transmission line or CPW 737, EO modulator grounding electrode also adopts multi-thread the connection with terminal ground plate 748.Terminal ground plate 748 is connected with terminal ground connection by through hole 750.
[50] structure of integrated RF resistance 739 is the broaden cone and the opposite cones that narrow down that narrow down gradually of widening gradually.The transmission resistance of the longitudinal section of impedance material and the width of structure are inversely proportional to, and along with the cone characteristic impedance increases gradually, cumulative or width decrescence can make resistance constantly reduce.Pyramidal structure can make the RF impedance of transmission ripple change, and same, the impedance cone is used to a RF impedance and another RF impedance matching.For example, can utilize tapered transmission line 50 ohm coaxial cable to be become 75 ohm coaxial cable.As a result, because impedance slowly reduces, power is along the slowly loss of length of structure.When in this structure, the structure of circular cone is to narrow down gradually, and impedance increases along length, still continues to consume RF power.The broaden structure that narrows down of circular cone can provide the free of losses impedance and the combination of loss impedance (loss impedance meeting cause radio-frequency power loss) and the RF impedance matching of optimization are arranged.
[51] shape approximation of radio-frequency resistance 739 is cut flat kite in the top, extends to second ground plate 738 from radio-frequency transmission line 737, and it can be counted as the electric transmission line with varying width.Its width is dull to be increased, and up to interlude 760, is constant at the width of interlude 760, and the width dullness reduces then, connects the terminal earth terminal by through hole 740 successively up to second ground plate, 738, the second ground plates 738.
[52] radio frequency tap output port is provided by radio frequency tap electrode 762 (preferable alloy rod), and tap electrode 762 is connected to the both sides of the radio-frequency resistance 739 that is positioned at interlude 760.The tapered edge 761,763 of radio-frequency resistance 739 can customize to obtain required characteristic, for example the characteristic of the level and smooth consumption of radio-frequency power under minimum RF-reflective.The profile 761,763 of tapered edge can by linearity, secondary, exponential sum any other function of gradual change obtains along with the transmission line distance.
[53] radio-frequency resistance 739 can be formed by the charcoal filled polymer that definite thin-film electro resistance is arranged.The precision target resistance value of resistance can be realized by Laser Micro-Machining.
[54] radio-frequency power apportionment ratio or beam splitting rate can be passed through the trapezoidal size realization of the upper and lower of adjustment radio-frequency resistance 739.Be imported into radio frequency signal detecting circuitry (not shown in the diagram) from the radio-frequency power of radio frequency tap electrode 762 taps.Adopt and mix the PCB technology, also the radio frequency signal detecting circuitry that comprises rf diode and passive component can be integrated in the rf terminal plate 735 on the ceramic substrate 734.
The value of [55] beam splitting rate generally-6dB and-20dB between, but most of practical application preferably approximately-10dB.
[56] for input port 702, the input impedance value be used to provide with electric light (EO) optical modulator on the best radio frequency of transmission line electrode impedance coupling.And resistance value changes with concrete EO modulator design, normally about 30 ohm to 75 ohm of scope, and the representative value of most of lithium niobates is 40 ohm.The radio frequency tap electrode 762 50 ohm of radio circuits of standard of working gradually on the other hand are so their source impedance is designed to mate this value.
[57] as shown in Figure 8, shape approximation can obtain with integral equation or by the little section summation estimation of following formula to horizontal direction in the direct current/low frequency resistance of the radio-frequency resistance 839 of the asymmetric rhombus that may have bent limit
[58]R
i＝∑R
s*δ
h/[t*f(x
i)]
[59] R
sBe the film resistance of impedance material, δ h is the height of sheet, and t is the thickness of impedance material, f (x
i) be the curvilinear function of i sheet.
[60] input terminal 827 forms the top, and grounding terminals 828 forms the bottom, and the tap terminal is in the both sides of radio-frequency resistance 829.Circular edges 860,870 can be a straight line, also can be according to function f (x
i) inside curve, shown in dotted line 861,871.
[61] radio-frequency resistance 839 is by three parts: two approximate trapezium structures and a center rectangle structure are formed, as shown in Figure 8.Formula above utilizing can calculate the direct current/low frequency resistance R of upper and lower respectively
1And R
2Similarly, also can calculate the resistance R of rectangular segment
rTherefore total direct current/low frequency resistance is R1, the summation of R2 and Rr.
[62] the required voltage distribution rate of radio frequency signal detecting circuitry normal running is by R
1/ (R
1+ R
2) decision.In this structure, total height H is two trapezoidal portions height h
1, h
2With rectangle height h
3Summation.Other parameter of rf terminal is width W and thin-film electro resistance R
s
[63] by adjusting width W, the height h of three parts
1, h
2And h
3, thin-film electro resistance R
s, the value of total resistance of needed rf terminal and the voltage of radio-frequency signal detection/power division rate can be optimized respectively.
[64] described integrated RF terminal as the EO modulator applications, it has the rf terminal that is used for RF signal monitoring and the function of radio-frequency power/voltage divider.Terminal resistance and power division value can be adjusted respectively and be simultaneously optimised.Single device has shown superior radio frequency/electrical characteristics, just wide working band and low parasitic parameter.Have the integrated RF terminal of two taps or similar shapes and can be implemented in that the impedance from EO modulator electrode smoothly changes to earth terminal under the minimum reflection.
[65] described integrated RF terminal disclosed herein also can be used as independent device or be used in the integrated optic modulator of other type, for example on the semi-conducting material and electric absorption on any electric light or photoelectric device (EA) and electric light MZ Mach-Zehnder (EO MZ), these application only need rf terminal or need rf terminal and the combination of radio-frequency power/voltage divider.
[66] in a word, the disclosed rf terminal that is used for optical modulator comprises having the substrate chip that receives the input port of remaining rf modulated signal from optical modulator; Comprise that one on the substrate chip can provide the ground of electric direct current and the loop of rf to be connected; Comprise the impedance transmission lines on the substrate chip, described transmission line has width and length, described length extends to grounding terminals from input terminal, to absorb described remaining rf modulated signal, wherein, described input terminal is connected to described input port, and described grounding terminals is connected to describedly and connects; Also be included in the radio frequency tap output port on the substrate chip, described radio frequency tap output port is connected to the edge of the interlude of impedance transmission lines, is used for the beam splitting rate coupling output rf monitoring signal by remaining rf modulated signal.The scope of beam splitting rate is generally approximately-and 6dB is to-20dB.
[67] width of impedance transmission lines can have broaden a taper and the taper that narrows down from the interlude to the rf inputs from the ground end to interlude.
[68] broadening the taper or the taper that narrows down can be by a decision in linearity, secondary and the exponential profile function.The broaden taper or the taper that narrows down can be regulated by Laser Micro-Machining.
[69] impedance transmission lines can be made by film or thick film impedance material.The carbon filled polymer is the material that is suitable for impedance transmission lines.
[70] the impedance transmission lines road can be co-planar waveguide or microstrip line.
[71] impedance ranges of radio frequency tap output port is about 30 ohm to 75 ohm.
[72] substrate chip is made up of pottery or semiconductor.Can adopt and mix PCB technology production substrate chip.
Claims (11)
1. rf terminal that is used for optical modulator, it comprises:
Substrate chip, it has the input port that receives remaining rf modulated signal from described optical modulator;
Ground connection on described substrate chip is in order to provide electric direct current and the loop of rf;
Impedance transmission lines on described substrate chip, described transmission line has width and length, described length extends to grounding terminals from input terminal, to absorb described remaining rf modulated signal, wherein, described input terminal is connected to described input port, and described grounding terminals is connected to described ground connection; And
Radio frequency tap output port on described substrate chip, described output port is connected to the edge of impedance transmission lines interlude, with the beam splitting rate coupling output rf monitoring signal by remaining rf modulated signal.
2. rf terminal as claimed in claim 1 is characterized in that, the width of described impedance transmission lines has broaden taper and the taper that narrows down from described interlude to described rf inputs mouth from described grounding terminals to described interlude.
3. rf terminal as claimed in claim 2 is characterized in that, described broaden taper or the taper that narrows down are determined that by profile function described profile function be in linearity, secondary and the exponential profile function.
4. rf terminal as claimed in claim 2 is characterized in that described impedance transmission lines comprises impedance material, and described impedance material is selected from film and the thick film.
5. rf terminal as claimed in claim 4 is characterized in that described impedance material comprises the charcoal filled polymer.
6. rf terminal as claimed in claim 2 is characterized in that, described broaden taper or the described taper that narrows down are laser processings.
7. rf terminal as claimed in claim 2 is characterized in that, described impedance transmission lines is in co-planar waveguide and the microstrip line.
8. rf terminal as claimed in claim 2 is characterized in that, described beam splitting rate approximately-6dB and-20dB between.
9. rf terminal as claimed in claim 2 is characterized in that, the resistance of described radio frequency tap output port is between about 30 ohm and 75 ohm.
10. rf terminal as claimed in claim 2 is characterized in that, described substrate chip comprises in pottery and the semiconductor.
11. rf terminal as claimed in claim 2 is characterized in that, described substrate chip is by mixing the manufacturing of PCB technology.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US86206206P | 2006-10-19 | 2006-10-19 | |
| US60/862,062 | 2006-10-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101166063A true CN101166063A (en) | 2008-04-23 |
| CN101166063B CN101166063B (en) | 2012-07-04 |
Family
ID=39334579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101632263A Active CN101166063B (en) | 2006-10-19 | 2007-10-19 | Integrated termination for eo modulator with RF signal monitoring functionality |
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| Country | Link |
|---|---|
| CN (1) | CN101166063B (en) |
| IT (1) | ITTO20070738A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105917023A (en) * | 2013-10-03 | 2016-08-31 | 英飞康公司 | Monitoring thin film deposition |
-
2007
- 2007-10-18 IT ITTO20070738 patent/ITTO20070738A1/en unknown
- 2007-10-19 CN CN2007101632263A patent/CN101166063B/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105917023A (en) * | 2013-10-03 | 2016-08-31 | 英飞康公司 | Monitoring thin film deposition |
| CN105917023B (en) * | 2013-10-03 | 2019-05-10 | 英飞康公司 | Monitoring film deposition |
| US10704150B2 (en) | 2013-10-03 | 2020-07-07 | Inficon, Inc. | Monitoring thin film deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| ITTO20070738A1 (en) | 2008-04-20 |
| CN101166063B (en) | 2012-07-04 |
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