CN101162337A - Pixel structure of semi-penetrate reflection type liquid crystal display array substrates and manufacturing method thereof - Google Patents
Pixel structure of semi-penetrate reflection type liquid crystal display array substrates and manufacturing method thereof Download PDFInfo
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 title claims description 72
- 239000003990 capacitor Substances 0.000 claims abstract description 37
- 230000008878 coupling Effects 0.000 claims abstract description 9
- 238000010168 coupling process Methods 0.000 claims abstract description 9
- 238000005859 coupling reaction Methods 0.000 claims abstract description 9
- 238000000059 patterning Methods 0.000 claims description 224
- 229910052751 metal Inorganic materials 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 39
- 230000001681 protective effect Effects 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000000149 penetrating effect Effects 0.000 claims description 10
- 238000010586 diagram Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002362 mulch Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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Abstract
The invention discloses a dot structure for a semi-breakthrough reflection type liquid crystal display array base plate, comprising a pattern type first conductive layer, a pattern type second conductive layer and a pattern type transparent conductive layer, wherein, the pattern type first conductive layer is formed on the base plate and comprises a first part for being coupled with a dot electrode potential, the pattern type second conductive layer comprises a first part for being coupled with a shared electrode potential and forms a first storage capacitor together with the first part of the pattern type first conductive layer, and the pattern type transparent conductive layer is in coupling with the dot electrode potential and forms a second storage capacitor together with the first part of the pattern type second conductive layer. A manufacturing method of the semi-breakthrough reflection type liquid crystal display array base plate is also disclosed here.
Description
Technical field
The present invention relates to a kind of LCD array substrate and manufacture method, and relate in particular to a kind of dot structure and manufacture method of semi-penetrate reflection type liquid crystal display array substrates.
Background technology
Figure 1A illustrates the synoptic diagram of the liquid crystal pixel in the general semi-penetrate reflection type liquid crystal display array substrates.This liquid crystal pixel is formed by data line 100 and sweep trace 102 intersections, and comprise penetrating region 104 and echo area 106, wherein the backlight that backlight module provided can be sent to liquid crystal layer via penetrating region 104, and external light source then is by being back in the liquid crystal layer after the reflection of echo area 106 again.
Figure 1B illustrates the synoptic diagram of the equivalent electrical circuit of the liquid crystal pixel shown in Figure 1A.This equivalent circuit comprises a liquid crystal capacitance C
LC, a storage capacitors C
ST, storage capacitors C wherein
STGeneral in the echo area of liquid crystal pixel, form by the metal conducting layer crossover that couples common electrode current potential and pixel electrode current potential respectively.Storage capacitors C
STIn order in the charging process of liquid crystal pixel with liquid crystal capacitance C
LCEffect is so as to reducing before and after the liquid crystal pixel charging by pixel element stray capacitance C
GDThe current potential pressure drop that is caused, promptly alleged feedthrough (feed-through) voltage drop.
Yet, because storage capacitors C
STCan be subject to the reflector space size of liquid crystal pixel in design, in having more high-resolution LCD, because the area of its liquid crystal pixel diminishes, also be that the area of its reflector space diminishes, so also relatively cause storage capacitors C especially
STReduce.
Therefore, need a kind of liquid crystal pixel or LCD array substrate, can improve storage capacitors C
STLimited in design problem is for using in high-resolution LCD.
Summary of the invention
The present invention will deal with problems and be to provide a kind of dot structure and manufacture method of semi-penetrate reflection type liquid crystal display array substrates, diminish and make the problem that its storage capacitors reduces relatively so as to solving area because of liquid crystal pixel, and improve the electric characteristics of LCD.
For achieving the above object, according to one embodiment of the invention, propose a kind of dot structure of semi-penetrate reflection type liquid crystal display array substrates, this dot structure comprises a patterning first conductive layer, one first inner layer dielectric layer, a patterning second conductive layer, one second inner layer dielectric layer and a patterned transparent conductive layer.Patterning first conductive layer is formed on the substrate, and tool one first couples a pixel electrode current potential.First inner layer dielectric layer is covered on patterning first conductive layer.Patterning second conductive layer is formed on first inner layer dielectric layer, and tool one first is in order to coupling the community electrode current potential, and forms one first storage capacitors with the first of patterning first conductive layer.Second inner layer dielectric layer is covered on patterning second conductive layer.Patterned transparent conductive layer is formed on second inner layer dielectric layer, and couples the pixel electrode current potential and form one second storage capacitors with the first of patterning second conductive layer.
And, for achieving the above object, according to another embodiment of the present invention, a kind of manufacture method of semi-penetrate reflection type liquid crystal display array substrates is proposed, this manufacture method comprises: form a patterning first conductive layer on a substrate, wherein a first of patterning first conductive layer is in order to couple a pixel electrode current potential; Forming one first inner layer dielectric layer is covered on patterning first conductive layer; Form a patterning second conductive layer on first inner layer dielectric layer, wherein a first of patterning second conductive layer is in order to coupling the community electrode current potential, and forms one first storage capacitors with the first of patterning first conductive layer; Forming one second inner layer dielectric layer is covered on patterning second conductive layer; And form a patterned transparent conductive layer on second inner layer dielectric layer, wherein patterned transparent conductive layer forms one second storage capacitors in order to couple the pixel electrode current potential with the first of patterning second conductive layer.
According to further embodiment of this invention, a kind of dot structure of LCD array substrate is proposed.This dot structure comprises a substrate, a patterning first conductive layer, one first inner layer dielectric layer, a patterned semiconductor layer, a patterning second conductive layer, one second inner layer dielectric layer, a patterned transparent conductive layer, a protective seam and a patterning reflective metal layer.Substrate has one first district and one second district.Patterning first conductive layer is formed on the substrate, and comprises one first part, one second part and the 3rd partly, and wherein first partly is positioned at first district, and second partly as an one scan line and a grid, and the 3rd part conduct is the layer data line segment once.First inner layer dielectric layer is covered on the substrate, and patterned semiconductor layer then is formed on the grid.
Patterning second conductive layer is formed on first inner layer dielectric layer, and comprise one first part, one second part and the 3rd partly, wherein first of patterning second conductive layer partly is positioned on first inner layer dielectric layer in first district, and as a common lines in order to coupling the community electrode current potential, and partly form one first storage capacitors with first of patterning first conductive layer.Patterning second conductive layer second partly as a drain electrode, and with first electrically connect partly of patterning first conductive layer.The 3rd part of patterning second conductive layer is as a upper layer data line segment and an one source pole, so as to forming a data line with the 3rd part mutual conduction of patterning first conductive layer.Second inner layer dielectric layer then is covered on the substrate.
Patterned transparent conductive layer is formed on second inner layer dielectric layer in first district and second district, wherein patterned transparent conductive layer couple patterning second conductive layer second partly, and form one second storage capacitors with the first of second conductive layer.Protective seam is covered on the substrate, and has the patterned transparent conductive layer that an opening exposes second district, so as to form a penetrating region of dot structure in second district.The patterning reflective metal layer then is to be formed on the protective seam, and the electrically connect patterned transparent conductive layer, so as to form an echo area of dot structure in first district.
According to yet another embodiment of the invention, a kind of manufacture method of LCD array substrate is proposed, this manufacture method comprises: a substrate is provided, has one first district and one second district; Form a patterning first conductive layer on substrate, wherein patterning first conductive layer comprises one first part, one second part and the 3rd partly, and first of patterning first conductive layer partly is positioned at first district, second part of patterning first conductive layer is as an one scan line and a grid, and the 3rd part conduct of patterning first conductive layer is the layer data line segment once; Forming one first inner layer dielectric layer is covered on the substrate; Form a patterned semiconductor layer on grid; Form a patterning second conductive layer on first inner layer dielectric layer, wherein patterning second conductive layer comprises one first partly, one second part and one the 3rd partly, and first of patterning second conductive layer partly is positioned on first inner layer dielectric layer and in first district, and as a common lines in order to couple the community electrode current potential, and partly form one first storage capacitors with first of patterning first conductive layer, second of patterning second conductive layer partly drains as one, and the first part electrically connect with first conductive layer, the 3rd part of patterning second conductive layer is as a upper layer data line segment and an one source pole, so as to forming a data line with the 3rd part mutual conduction of patterning first conductive layer; Forming one second inner layer dielectric layer is covered on the substrate; Form a patterned transparent conductive layer on second inner layer dielectric layer in first district and second district, wherein patterned transparent conductive layer couple patterning second conductive layer second partly, and form one second storage capacitors with the first of patterning second conductive layer; Form a protective seam and be covered on the substrate, wherein protective seam has the patterned transparent conductive layer that an opening exposes second district, so as to form a penetrating region in second district; And forming a patterning reflective metal layer on protective seam, patterning reflective metal layer electrically connect patterned transparent conductive layer wherein is so as to forming an echo area in first district.
By technology contents of the present invention as can be known, the demonstration control structure of application of aforementioned semi-penetrate reflection type liquid crystal display array substrates and manufacture method thereof can provide bigger storage capacitors in identical liquid crystal pixel, make the design of storage capacitors have more elasticity, and bigger storage capacitors also makes LCD have preferable electric characteristics, and liquid crystal molecule has the more stable reaction time.
Description of drawings
Figure 1A illustrates the synoptic diagram of the liquid crystal pixel in the general semi-penetrate reflection type liquid crystal display array substrates;
Figure 1B illustrates the synoptic diagram of the equivalent electrical circuit of the liquid crystal pixel shown in Figure 1A;
Fig. 2 A to Fig. 2 D illustrates the synoptic diagram according to the manufacturing process of the semi-penetrate reflection type liquid crystal display array substrates of one embodiment of the invention;
Fig. 2 E illustrates the diagrammatic cross-section of a-b part among Fig. 2 C;
Fig. 2 F illustrates the diagrammatic cross-section of a-b part among Fig. 2 D;
Fig. 3 A to Fig. 3 F illustrates the synoptic diagram according to the manufacturing process of the semi-penetrate reflection type liquid crystal display array substrates of another embodiment of the present invention.
Wherein, Reference numeral:
100: data line
102: sweep trace
104. penetrating region
106: the echo area
201: the first inner layer dielectric layers
221: the second inner layer dielectric layers
200,300: first part of patterning first conductive layer
202,302: second part of patterning first conductive layer
204,304: the 3rd part of patterning first conductive layer
206,306: patterned semiconductor layer
210,310: first part of patterning second conductive layer
212,312: second part of patterning second conductive layer
214,314: the 3rd part of patterning second conductive layer
216a, 216b, 222,336a, 336b, 340a, 340b: contact hole
220,320: patterned transparent conductive layer
232,332: opening
238,338: the outer peripheral areas of opening
234,350: the patterning reflective metal layer
Embodiment
Fig. 2 A to Fig. 2 D illustrates the synoptic diagram according to the manufacturing process of the semi-penetrate reflection type liquid crystal display array substrates of the embodiment of the invention.With present embodiment, the liquid crystal pixel in the LCD array substrate comprises first district (I) and second district (II), and wherein first district (I) for example is the echo area, and second district (II) for example is penetrating region.Please refer to Fig. 2 A, at first go up and form patterning first conductive layer in substrate (not illustrating).This patterning first conductive layer comprises partly the 202 and the 3rd part 204 of first part 200, second, and wherein first of patterning first conductive layer part 200 is positioned at first district (I) of liquid crystal pixel, and couples the pixel electrode current potential; Patterning first conductive layer second partly 202 as the sweep trace in the LCD array substrate, simultaneously also as the grid of thin film transistor (TFT); The 3rd part 204 of patterning first conductive layer then is as the lower floor's data line segment in the LCD array substrate.Afterwards, form first district (I) and second district (II) that first inner layer dielectric layer 201 (being illustrated in Fig. 2 E) is covered in liquid crystal pixel simultaneously again.
Please refer to Fig. 2 B, then form patterned semiconductor layer 206 on the grid of aforementioned formation, the material that wherein forms this patterned semiconductor layer 206 for example can be amorphous silicon, and (amorphous silicon, a-Si) material form amorphous silicon film transistor so as to making aforementioned thin film transistor (TFT).Then, form patterning second conductive layer again on the patterned semiconductor layer 206 and first inner layer dielectric layer 201.Patterning second conductive layer comprises partly the 212 and the 3rd part 214 of first part 210, second, wherein first of patterning second conductive layer partly 210 is positioned on first inner layer dielectric layer 201 in first district (I) of liquid crystal pixel, and as the common lines in the LCD array substrate, and couple the common electrode current potential, and partly 200 form the first storage capacitors C with first of patterning first conductive layer that couples the pixel electrode current potential
ST1(being illustrated in Fig. 2 E); Second partly 212 the drain electrodes of patterning second conductive layer as above-mentioned thin film transistor (TFT), and with first 200 electrically connects partly of patterning first conductive layer; The 3rd part 214 of patterning second conductive layer then is the source electrode as above-mentioned thin film transistor (TFT), simultaneously also as the upper layer data line segment in the LCD array substrate, so as to form the data line in the LCD array substrate with the 3rd part 204 mutual conduction of patterning first conductive layer.Afterwards, forming one second inner layer dielectric layer 221 (being illustrated in Fig. 2 E) again is covered among first district (I) of liquid crystal pixel and second district (II) on the completed structure simultaneously.
In addition, can make it have the first contact hole 216a by etching first inner layer dielectric layer 201, second part 212 for patterning second conductive layer partly 200 is made electrically connect with first of patterning first conductive layer, and at least one contact hole 216b, the 3rd part 214 of confession patterning second conductive layer forms the data line in the LCD array substrate with the 3rd part 204 mutual conduction of patterning first conductive layer.
Please refer to Fig. 2 C, then form a patterned transparent conductive layer 220 on second inner layer dielectric layer 221 of first district (I) and second district (II), so as to form the penetrating region of liquid crystal pixel in this semi-penetrate reflection type liquid crystal display array substrates at second district (II), the material that wherein forms patterned transparent conductive layer 220 can comprise as tin indium oxide (ITO), indium zinc oxide transparent conductivity materials such as (IZO).In addition, patterned transparent conductive layer 220 more with second 212 mutual conduction partly of patterning second conductive layer, partly 210 form the second storage capacitors C in order to couple the pixel electrode current potential with first of patterning second conductive layer
ST2(being illustrated in Fig. 2 E).In addition, also can make it have at least one second contact hole 222, for second part 212 mutual conduction of patterned transparent conductive layer 220 with patterning second conductive layer by etching second inner layer dielectric layer 221.
Please refer to Fig. 2 D, then form protective seam 230 (being illustrated in Fig. 2 F) and be covered among first district (I) and second district (II) on the completed structure, wherein protective seam has opening 232 and exposes the patterned transparent conductive layer 220 that part is positioned at second district (II).At last; form again on the protective seam that patterning reflective metal layer 234 is covered in first district (I) and second district (II); and with patterned transparent conductive layer 220 electrically connects; so as to form the echo area of liquid crystal pixel in this semi-penetrate reflection type liquid crystal display array substrates at first district (I), the material that wherein forms patterning reflective metal layer 234 can comprise as conductive materials such as aluminium.In addition, the protective seam 230 of patterned transparent conductive layer 220 tops optionally forms.In one embodiment, patterned transparent conductive layer 220 tops do not form protective seam 230, cover thereon but directly form patterning reflective metal layer 234.In addition, when patterning reflective metal layer 234 passes through patterning step, only remove opening 232 middle sections, stay the outer peripheral areas of opening 232, shown in dotted line 238 among Fig. 2 D, make patterning reflective metal layer 234 and patterned transparent conductive layer 220 electrically connects.
Fig. 2 E illustrates the diagrammatic cross-section of a-b part among Fig. 2 C.As seen from the figure, couple the pixel electrode current potential patterning first conductive layer first partly 200 can partly 210 form the first storage capacitors C with first of patterning second conductive layer that couples the common electrode current potential
ST1, first part 210 that couples patterning second conductive layer of common electrode current potential then can form the second storage capacitors C with the patterned transparent conductive layer 220 that couples the pixel electrode current potential
ST2In addition, first inner layer dielectric layer 201 forms the first contact hole 216a by etching, for second part 212 of patterning second conductive layer and first part, 200 mutual conduction of patterning first conductive layer, and second inner layer dielectric layer 221 also forms second contact hole 222 by etching, for second part 212 mutual conduction of patterned transparent conductive layer 220 with patterning second conductive layer, make patterned transparent conductive layer 220 can be able to first 200 mutual conduction partly, to couple the pixel electrode current potential by the first contact hole 216a and second contact hole 222 and patterning first conductive layer.
Fig. 2 F illustrates the diagrammatic cross-section of a-b part among Fig. 2 D.As seen from the figure; protective seam 230 is covered on the middle patterned transparent conductive layer 220 in first district (I) and second inner layer dielectric layer 221; patterning reflective metal layer 234 then is to be covered on the protective seam 230, also is that patterning first conductive layer, first inner layer dielectric layer 201, patterning second conductive layer, second inner layer dielectric layer 221 and patterned transparent conductive layer 220 are all between patterning reflective metal layer 234 and substrate.The sidewall of patterning reflective metal layer 234 protective mulches 230, and cover part patterned transparent conductive layer 220.In addition, when carrying out patterning step, only remove opening 232 middle sections, stay the outer peripheral areas of opening 232, shown in dotted line 238 among Fig. 2 D (or Fig. 2 F split shed outer peripheral areas 238), make patterning reflective metal layer 234 and patterned transparent conductive layer 220 electrically connects.
Fig. 3 A to Fig. 3 F illustrates the synoptic diagram according to the manufacturing process of the semi-penetrate reflection type liquid crystal display array substrates of another embodiment of the present invention.With present embodiment, the liquid crystal pixel in the LCD array substrate comprises first district (I) and second district (II) equally.Please refer to Fig. 3 A, at first on substrate, form patterning first conductive layer.This patterning first conductive layer comprises partly the 302 and the 3rd part 304 of first part 300, second, and wherein first of patterning first conductive layer part 300 is positioned at first district (I) of liquid crystal pixel, and couples a pixel electrode current potential; Patterning first conductive layer second partly 302 as the sweep trace in the LCD array substrate, simultaneously also as the grid of a thin film transistor (TFT); The 3rd part 304 of patterning first conductive layer then is as the data line segment in the LCD array substrate.Afterwards, form first district (I) and second district (II) that first inner layer dielectric layer (not illustrating) is covered in liquid crystal pixel simultaneously again.
Please refer to Fig. 3 B, then same formation patterned semiconductor layer 306 forms amorphous silicon film transistor so as to making aforementioned thin film transistor (TFT) on the grid of aforementioned formation.Then, form patterning second conductive layer again on the patterned semiconductor layer 306 and first inner layer dielectric layer.Patterning second conductive layer comprises partly the 312 and the 3rd part 314 of first part 310, second, wherein first of patterning second conductive layer partly 310 cover on first inner layer dielectric layer in first district (I) that is positioned at liquid crystal pixel, and as the common lines in the LCD array substrate, in order to coupling the common electrode current potential, and partly 300 form first storage capacitors (not illustrating) with first of patterning first conductive layer that couples the pixel electrode current potential; Second partly 312 the drain electrodes of patterning second conductive layer as above-mentioned thin film transistor (TFT), and with first 300 electrically connects partly of patterning first conductive layer; The 3rd part 314 of patterning second conductive layer then is the source electrode as above-mentioned thin film transistor (TFT), simultaneously also as another data line segment in the LCD array substrate, for the follow-up data line that forms with the 3rd part 304 mutual conduction of patterning first conductive layer in the LCD array substrate.Afterwards, forming second inner layer dielectric layer (not illustrating) again is covered among first district (I) of liquid crystal pixel and second district (II) on the completed structure.
Please refer to Fig. 3 C, then form patterned transparent conductive layer 320 on second inner layer dielectric layer of first district (I) and second district (II), so as to form the penetrating region of liquid crystal pixel in this semi-penetrate reflection type liquid crystal display array substrates at second district (II), the material that wherein forms patterned transparent conductive layer 320 can comprise as tin indium oxide transparent conductivity materials such as (ITO).In addition, patterned transparent conductive layer 320 couples the pixel electrode current potential, so as to partly 310 forming second storage capacitors (not illustrating) with first of patterning second conductive layer that couples the common electrode current potential.
Please refer to Fig. 3 D, then form a protective seam (not illustrating) and be covered among first district (I) and second district (II) on the completed structure, wherein protective seam has an opening 332, exposes the patterned transparent conductive layer 320 that part is positioned at second district (II).Afterwards; again by etch protection layer make its patterning first conductive layer first partly 300 and patterning second conductive layer second partly form contact hole 336a above 312, patterning first conductive layer the 3rd partly 304 and patterning second conductive layer the 3rd partly 314 adjacent parts form several contact holes 336b.
Please refer to Fig. 3 E, then again to patterning first conductive layer first partly 300 and patterning second conductive layer second partly first inner layer dielectric layer and second inner layer dielectric layer on 312 carry out etching, so as to forming contact hole 340a thereon, and to patterning first conductive layer the 3rd partly 304 and patterning second conductive layer the 3rd partly first inner layer dielectric layer and second inner layer dielectric layer on 314 carry out etching, so as to forming contact hole 340b thereon.
Please refer to Fig. 3 F; form the protective seam that patterning reflective metal layer 350 is covered in first district (I) and second district (II) at last again; the contact hole 340a of first part 300 of patterning first conductive layer and second part 312 of patterning second conductive layer; and on the contact hole 340b of the 3rd part 314 of the 3rd part 304 of patterning first conductive layer and patterning second conductive layer; so as to form the echo area of liquid crystal pixel in this semi-penetrate reflection type liquid crystal display array substrates at first district (I); and make first 300 second 312 mutual conduction partly partly of patterning first conductive layer, and the 3rd 304 the 3rd 314 mutual conduction and form data line in the LCD array substrate partly partly of patterning first conductive layer via contact hole 340b and patterning reflective metal layer 350 and patterning second conductive layer via contact hole 340a and patterning reflective metal layer 350 and patterning second conductive layer.In addition, patterning reflective metal layer 350 also can shown in dotted line 338 among Fig. 3 F, make patterning reflective metal layer 350 and patterned transparent conductive layer 320 electrically connects by covering the outer peripheral areas of opening 332.
By the embodiment of the invention described above as can be known, dot structure and the method for using this semi-penetrate reflection type liquid crystal display array substrates can provide bigger storage capacitors in identical liquid crystal pixel, make the design of storage capacitors have more elasticity, and bigger storage capacitors also makes LCD have preferable electric characteristics, and liquid crystal molecule has the more stable reaction time.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection domain of the appended claim of the present invention.
Claims (18)
1. the dot structure of a semi-penetrate reflection type liquid crystal display array substrates is characterized in that, comprises:
One patterning, first conductive layer is formed on the substrate, and a first of this patterning first conductive layer couples a pixel electrode current potential;
One first inner layer dielectric layer is covered on this patterning first conductive layer;
One patterning, second conductive layer is formed on this first inner layer dielectric layer, and a first of this patterning second conductive layer is in order to coupling the community electrode current potential, and forms one first storage capacitors with this first of this patterning first conductive layer;
One second inner layer dielectric layer is covered on this patterning second conductive layer; And
One patterned transparent conductive layer is formed on this second inner layer dielectric layer, and couples this pixel electrode current potential and form one second storage capacitors with this first of this patterning second conductive layer.
2. dot structure according to claim 1 is characterized in that, this first inner layer dielectric layer has at least one first contact hole, for a second portion of this patterning second conductive layer and this first's mutual conduction of this patterning first conductive layer.
3. dot structure according to claim 1 is characterized in that, this second inner layer dielectric layer has at least one second contact hole, for a second portion and this patterned transparent conductive layer mutual conduction of this second conductive layer.
4. dot structure according to claim 1 is characterized in that, also comprises:
One protective seam, be covered on this patterned transparent conductive layer and this substrate, have an opening exposing this patterned transparent conductive layer of part, and have on the second portion and a third part of a plurality of the 3rd contact holes respectively at this first of this patterning first conductive layer and a third part and this patterning second conductive layer; And
One patterning reflective metal layer; be covered on this protective seam; this first of this patterning first conductive layer is via this second portion mutual conduction of those the 3rd contact holes and this patterning reflective metal layer and this patterning second conductive layer; this third part of this patterning first conductive layer is via this third part mutual conduction of those the 3rd contact holes and this patterning reflective metal layer and this patterning second conductive layer, and this patterning reflective metal layer and the electric connection of this patterned transparent conductive layer.
5. dot structure according to claim 1 is characterized in that, also comprises:
One reflective metal layer, be formed at this patterned transparent conductive layer top, and this patterning first conductive layer, this first inner layer dielectric layer, this patterning second conductive layer, this second inner layer dielectric layer and this patterned transparent conductive layer are all between this reflective metal layer and this substrate.
6. the manufacture method of a semi-penetrate reflection type liquid crystal display array substrates is characterized in that, comprises:
Form a patterning first conductive layer on a substrate, a first of this patterning first conductive layer is in order to couple a pixel electrode current potential;
Forming one first inner layer dielectric layer is covered on this patterning first conductive layer;
Form a patterning second conductive layer on this first inner layer dielectric layer, a first of this patterning second conductive layer is in order to coupling the community electrode current potential, and forms one first storage capacitors with this first of this patterning first conductive layer;
Forming one second inner layer dielectric layer is covered on this patterning second conductive layer; And
Form a patterned transparent conductive layer on this second inner layer dielectric layer, this patterned transparent conductive layer forms one second storage capacitors in order to couple this pixel electrode current potential with this first of this patterning second conductive layer.
7. manufacture method according to claim 6 is characterized in that, also comprises:
This first inner layer dielectric layer of etching makes this first of this patterning first conductive layer pass through a second portion mutual conduction of this first contact hole and this patterning second conductive layer to form at least one first contact hole.
8. manufacture method according to claim 6 is characterized in that, also comprises:
This second inner layer dielectric layer of etching makes a second portion of this patterning second conductive layer pass through this second contact hole and this patterned transparent conductive layer mutual conduction to form at least one second contact hole.
9. manufacture method according to claim 6 is characterized in that, also comprises:
Forming a protective seam is covered on this substrate;
This protective seam of etching is to form a plurality of the 3rd contact holes respectively on a second portion of this first of this patterning first conductive layer and a third part and this patterning second conductive layer and a third part; And
Forming a patterning reflective metal layer is covered on this protective seam; make this first of this patterning first conductive layer pass through this second portion mutual conduction of those the 3rd contact holes and this patterning reflective metal layer and this patterning second conductive layer; and this third part of this patterning first conductive layer is by this third part mutual conduction of those the 3rd contact holes and this patterning reflective metal layer and this patterning second conductive layer, and this patterning reflective metal layer and the electric connection of this patterned transparent conductive layer.
10. manufacture method according to claim 6 is characterized in that, also comprises:
Form a reflective metal layer in this patterned transparent conductive layer top, this patterning first conductive layer, this first inner layer dielectric layer, this patterning second conductive layer, this second inner layer dielectric layer and this patterned transparent conductive layer are all between this reflective metal layer and this substrate.
11. the dot structure of a LCD array substrate is characterized in that, comprises:
One substrate has one first district and one second district;
One patterning, first conductive layer, be formed on this substrate, and comprise one first part, one second part and the 3rd partly, this first part is positioned at this first district, this second part is as an one scan line and a grid, and the 3rd part conduct is the layer data line segment once;
One first inner layer dielectric layer is covered on this substrate;
One patterned semiconductor layer is formed on this grid;
One patterning, second conductive layer, be formed on this first inner layer dielectric layer, and comprise one first part, one second part and the 3rd partly, this first part of this patterning second conductive layer is positioned on this first inner layer dielectric layer in this first district, and as a common lines in order to coupling the community electrode current potential, and first partly form one first storage capacitors with this of this patterning first conductive layer; This of this patterning second conductive layer be second partly as a drain electrode, and with this first electrically connect partly of this patterning first conductive layer; The 3rd part of this patterning second conductive layer is as a upper layer data line segment and an one source pole, so as to forming a data line with the 3rd part mutual conduction of this patterning first conductive layer;
One second inner layer dielectric layer is covered on this substrate;
One patterned transparent conductive layer, be formed on this second inner layer dielectric layer in this first district and this second district, this patterned transparent conductive layer couple this patterning second conductive layer this second partly, and form one second storage capacitors with this first of this second conductive layer;
One protective seam is covered on this substrate, and has this patterned transparent conductive layer that an opening exposes this second district, so as to form a penetrating region of this dot structure in this second district; And
One patterning reflective metal layer is formed on this protective seam, and this patterned transparent conductive layer of electrically connect, so as to form an echo area of this dot structure in this first district.
12. dot structure according to claim 11, it is characterized in that, this first inner layer dielectric layer has at least one first contact hole, for this second portion of this patterning second conductive layer and this first's mutual conduction of this patterning first conductive layer, and this patterning second conductive layer the 3rd partly with the 3rd part mutual conduction of this patterning first conductive layer.
13. dot structure according to claim 11 is characterized in that, this second inner layer dielectric layer has at least one second contact hole, for this second portion and this patterned transparent conductive layer mutual conduction of this patterning second conductive layer.
14. dot structure according to claim 11; it is characterized in that; this protective seam has on a plurality of the 3rd contact holes this second portion and this third part respectively at this first of this patterning first conductive layer and this third part and this patterning second conductive layer; supply this first of this patterning first conductive layer this second portion mutual conduction, and supply this third part of this patterning first conductive layer this third part mutual conduction via those the 3rd contact holes and this patterning reflective metal layer and this patterning second conductive layer via those the 3rd contact holes and this patterning reflective metal layer and this patterning second conductive layer.
15. the manufacture method of a LCD array substrate is characterized in that, comprises:
One substrate is provided, has one first district and one second district;
Form a patterning first conductive layer on this substrate, this patterning first conductive layer comprises one first part, one second part and the 3rd partly, this first part of this patterning first conductive layer is positioned at this first district, this second part of this patterning first conductive layer is as an one scan line and a grid, and the 3rd part conduct of this patterning first conductive layer is the layer data line segment once;
Forming one first inner layer dielectric layer is covered on this substrate;
Form a patterned semiconductor layer on this grid;
Form a patterning second conductive layer on this first inner layer dielectric layer, this patterning second conductive layer comprises one first part, one second part and the 3rd partly, this of this patterning second conductive layer first partly is positioned on this first inner layer dielectric layer and in this first district, and as a common lines in order to coupling the community electrode current potential, and first partly form one first storage capacitors with this of this patterning first conductive layer; This of this patterning second conductive layer be second partly as a drain electrode, and with this first electrically connect partly of this first conductive layer; The 3rd part of this patterning second conductive layer is as a upper layer data line segment and an one source pole, so as to forming a data line with the 3rd part mutual conduction of this patterning first conductive layer;
Forming one second inner layer dielectric layer is covered on this substrate;
Form a patterned transparent conductive layer on this second inner layer dielectric layer in this first district and this second district, this patterned transparent conductive layer couple this patterning second conductive layer this second partly, and form one second storage capacitors with this first of this patterning second conductive layer;
Form a protective seam and be covered on this substrate, this protective seam has this patterned transparent conductive layer that an opening exposes this second district, so as to forming a penetrating region in this second district; And
Form a patterning reflective metal layer on this protective seam, this this patterned transparent conductive layer of patterning reflective metal layer electrically connect is so as to forming an echo area in this first district.
16. manufacture method according to claim 15 is characterized in that, also comprises:
This first inner layer dielectric layer of etching is to form at least one first contact hole, make this second portion of this patterning second conductive layer pass through this first's mutual conduction of this first contact hole and this patterning first conductive layer, and the 3rd part of this patterning second conductive layer is by the 3rd part mutual conduction of this first contact hole and this patterning first conductive layer.
17. manufacture method according to claim 15 is characterized in that, also comprises:
This second inner layer dielectric layer of etching makes this second portion of this patterning second conductive layer pass through this second contact hole and this patterned transparent conductive layer mutual conduction to form at least one second contact hole.
18. manufacture method according to claim 15 is characterized in that, also comprises:
This protective seam of etching is to form a plurality of the 3rd contact holes respectively on this second portion of this first of this patterning first conductive layer and this third part and this patterning second conductive layer and this third part; supply this first of this patterning first conductive layer this second portion mutual conduction, and supply this third part of this patterning first conductive layer this third part mutual conduction via those the 3rd contact holes and this patterning reflective metal layer and patterning second conductive layer via those the 3rd contact holes and this patterning reflective metal layer and this patterning second conductive layer.
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| CNB2007101873039A CN100552519C (en) | 2007-11-19 | 2007-11-19 | The dot structure of semi-penetrate reflection type liquid crystal display array substrates and manufacture method |
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| CNB2007101873039A CN100552519C (en) | 2007-11-19 | 2007-11-19 | The dot structure of semi-penetrate reflection type liquid crystal display array substrates and manufacture method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102306650A (en) * | 2011-07-13 | 2012-01-04 | 友达光电股份有限公司 | Pixel structure and manufacturing method thereof |
| CN105137645A (en) * | 2015-09-25 | 2015-12-09 | 深圳市华星光电技术有限公司 | Color film array substrate, as well as production method and display device thereof |
| WO2018120543A1 (en) * | 2016-12-30 | 2018-07-05 | 惠科股份有限公司 | Method for manufacturing pixel structure |
| WO2018120623A1 (en) * | 2016-12-30 | 2018-07-05 | 惠科股份有限公司 | Pixel structure and display panel |
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2007
- 2007-11-19 CN CNB2007101873039A patent/CN100552519C/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102306650A (en) * | 2011-07-13 | 2012-01-04 | 友达光电股份有限公司 | Pixel structure and manufacturing method thereof |
| CN105137645A (en) * | 2015-09-25 | 2015-12-09 | 深圳市华星光电技术有限公司 | Color film array substrate, as well as production method and display device thereof |
| WO2017049663A1 (en) * | 2015-09-25 | 2017-03-30 | 深圳市华星光电技术有限公司 | Color filter array substrate and manufacturing method thereof, and display device |
| US9933652B2 (en) | 2015-09-25 | 2018-04-03 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Color filter array substrate and manufacturing method thereof, and display device |
| CN105137645B (en) * | 2015-09-25 | 2019-08-30 | 深圳市华星光电技术有限公司 | A kind of coloured silk membrane array substrate and its manufacturing method, display device |
| WO2018120543A1 (en) * | 2016-12-30 | 2018-07-05 | 惠科股份有限公司 | Method for manufacturing pixel structure |
| WO2018120623A1 (en) * | 2016-12-30 | 2018-07-05 | 惠科股份有限公司 | Pixel structure and display panel |
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| Publication number | Publication date |
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| CN100552519C (en) | 2009-10-21 |
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