CN101161605A - Low-temperature sintered ceramic material - Google Patents
Low-temperature sintered ceramic material Download PDFInfo
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- CN101161605A CN101161605A CNA2006101404775A CN200610140477A CN101161605A CN 101161605 A CN101161605 A CN 101161605A CN A2006101404775 A CNA2006101404775 A CN A2006101404775A CN 200610140477 A CN200610140477 A CN 200610140477A CN 101161605 A CN101161605 A CN 101161605A
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Abstract
The invention discloses a low temperature co-fired ceramic material which mainly comprises high heat conductivity ceramic materials such as beryllium oxide, carborundum and so on, as well as borosilicate series powder glass materials.
Description
Technical field
The present invention is a kind of low-temperature co-burning ceramic material, especially refer to that a kind of employing aluminium nitride (AlN) powder is a main raw material, the low melting glass that cooperates borosilicate series to form, and add suitable sintering aid, under 750-850 ℃ temperature, successfully prepared low-temperature sintering aluminium nitride (AlN)/glass composite material.
Background technology
Stupalith has good thermal conduction and electrical insulation property, can change chemical constitution again and adjust its character, application in electronic packaging is very extensive, it is not only common bearing substrate (substrate) and capping (Lid or Cap) material, also can cooperate the thick-film metalliz technology to make the usefulness of the online substrate of multilayer (Multilayer InterconnectionSubstrate) for high-density structure dress.Because the compactness height of stupalith, infiltration has the good ability that blocks to water molecules, and therefore becoming the resistance to air loss structure adorns main material.But stupalith fragility is higher, is subject to stress rupture; Compare with plastics structure dress, its process temperatures height, cost is also high; Therefore pottery structure dress is detected in the IC structure dress of high-reliability demand, and it no longer is to use maximum structure packing techniques.
The basic procedure of pottery structure dress, system is bonded in one with the IC chip earlier and has been equipped with in the ceramic substrate of pin frame or thick film metal connection pad, finish circuit between IC chip and the substrate connecting pad online after, method with the glutinous agent of glass, alloy welding, soldering or hard solder forms ceramic capping and substrate bonding again, and it is to utilize materials such as pottery, pin frame and glass can form the characteristic of tight joint that ceramic structure dress can provide the sealed structure of high-reliability, air hermetic.
The application of early stage stupalith in the structure dress can be in the solid-state logic circuit technology (Solid LogicTechnology) of IBM Corporation, see in the discrete systems technology (Monolithic System Technology), pottery double-row type structure dress (CerDIPs) is adorned the earliest for the resistance to air loss structure, it also is present modal ceramic structure packing technique, increase along with IC chipset product, ceramic structure dress miscellaneous, for example do not have pin or have the QFP structure dress of pin, PGA structure dress etc. also is developed, and PGA structure dress is the common structure dress form of central processing unit (CPU) of present Personal Computer.
Aluminum oxide is modal ceramic structure dress base material, and other also is important ceramic structure package material as beryllium oxide (BeO), silicon carbide (SiC), glass-ceramic (Glass-Ceramics), diamond (Diamond) etc.
The ceramic structure that is prepared as of slurry (Slurry) is adorned primary step, comprises cakingagent (Binder) with certain proportion blended pottery and glass powder, organic composition, fluidizer (Plasticizer), solvent etc. in the slurry.
The powder of pottery inorganic materials can be divided into two kinds on high temperature co-firing type and low temperature co-fired type, and aluminum oxide is about nine to one with the ratio of glass powder in the high temperature co-firing type powder; Aluminum oxide is about one to three with the ratio of glass powder in the low temperature co-fired type powder.The kind of ceramic powder is decided aluminum oxide, quartz (Quartz), calcium zirconate (Calcium Zirconate, CaZrO according to the demand of the substrate heat coefficient of expansion
3), forsterite (Forsterite, Mg
2SiO
4) wait raw substrate into high thermal expansion coefficient; Silica (Fused Silica), andaluzite (Mullite, Al
6Si
2O
13), trichroite (Cordierite, Mg
2Al
4Si
5O
18), zirconium white (Zirconia, ZrO
2) then be the raw substrate (2) of low thermal coefficient of expansion.
Common glass powder raw material is calcium magnesium alumino metasilicate glass (Calicia-Magnesia-Alumina SilicateGlass) or pyrex (Borosilicate Glass), it is close with the thermal expansivity of the conductor material that carries that one of the purpose of adding glass powder makes for the thermal expansivity of adjusting stupalith, with the generation of the thermal stresses of preventing; Because the sintering temperature of pure alumina, is added another purpose of glass powder up to 1900 ℃ reducing the processing procedure sintering temperature, save production cost.The kind of glass powder is decided according to the demand of substrate dielectric coefficient, and the softening temperature of glass material also must be higher than degreasing (De-binder) the burn off temperature of organic composition in the slurry, but can not be too high and hinder sintering.Pottery with must be after glass powder mixes through ball milling so that its uniform mixing and obtain suitable powder size and distribution control so that in the sintering process in future, can do accurately the shrinking percentage of base material.
Cakingagent provides that powder is temporary to be cohered, in order to the carrying out of successive process such as the moulding of giving birth to embryo sheet (Green Tape) and thick-film metalliz, it must have high glass tansition temperature (Glass Transition Temperature), high molecular, good degreasing burn off and be soluble in the characteristic of volatile organic solvent.The cakingagent that the high temperature co-firing substrate often uses is polyvinyl butyral acetal (Polyvinyl Butyral, PVB), the cakingagent of other kind has poly-acetic acid vinylchlorid ester (Polyvinyl Chloride Acetata), polymethylmethacrylate (PolymethylMethacrylate, PMMA), the poly-rare (Polyisobutylene of isobutyl, PIB), poly alpha methylstyrene (Polyalphamethyl Styrene, PAMS), nitrocellulose (Nitrocellulose), cellulose acetate (Cellulose Acetate) etc.The cakingagent that low temperature co-fired type substrate uses is except PVB, also comprise poly-acetone (Polyacetones), low alkyl acrylate copolymer (Copolymer of Lower Alkyl Acrylates) and methacrylic ester (Methacrylates) etc., these materials can be in air or blunt compression ring border, burn off between 300 to 400 ℃, addition be about the slurry gross weight 1 to more than 5%, but its addition is also unsuitable too high in order to avoid increase sintering time, the density when reducing powder sintering and the substrate shrinking percentage is increased.
The function of fluidizer is the glass tansition temperature that plastification (Plasticization) reduces cakingagent, makes living embryo sheet have the tropism of scratching.Phthalic ester (Phthalate), phosphoric acid salt (Phosphate), grease acid esters (Oleate), pure ethers (Glycol Ether), direactive glyceride hydrochlorate (Glyceryl Mono Oleate), mineral oil (Petroleum), polynary ester, loose ester derivative (Rosin Derivatives) and Sabah salt (Sabacate), Citrate trianion (Citrate) etc. all can be as fluidizers.
The function of organic solvent comprises the dispersion that promotes powder, compression deformation ability when the fine hole of formation coincides so that living embryo sheet to be provided in giving birth to the embryo sheet during volatilization, the kind of organic solvent is a lot, comprises acetic acid (Acetic Acid), acetone (Acetone), propyl carbinol (n-butyl Alcohol), butylacetate (Butyl Acetate), tetracol phenixin (CarbonTetrachloride), pimelinketone (Cyclohexanone), Pyranton (Diacetone Alcohol), dioxy land surround (Dioxane), 95% ethanol (Ethyl Alcohol), 85% ethyl acetate (Ethyl Acetate), ethyl cellosolve (Ethyl Cellosolye), ethylene dichloride (Ethylene Chloride), 95% Virahol (IsopropylAlcohol), isoamyl acetate (Isopropyl Acetate), methyl alcohol (Methyl Alcohol), ritalin (Methyl Acetate), methylcyclohexane (Methyl Cellosolve), methyl ethyl ketone (Methyl EthylKetone), mibk (Methyl Isobutyl Ketone), amylalcohol (Pentanol), pentanone (Pentanone), propylene dichloride (Propylene Dichloride), toluene (Toluene), 95% toluene ethanol (Toluene EthylAlcohol) etc.
With required inorganic with after organic composition mixes, behind the ball milling of certain hour, become slurry, it makes the living embryo sheet of desired shape with scraper moulding (Doctor Blade Casting), dry type pressing mold (Dry Press), cylinder compacting methods such as (RollCompaction) according to the needs of using again, after processing procedures such as thick-film metalliz, sintering become substrate material or capping, promptly can be applicable in the structure dress of IC chip again.
Ceramic green embryo sheet can cooperate thick film technology to make the structure dress base material of tool conductor circuit; As desire to make the ceramic substrate of tool multilayer order wire circuit structure, giving birth to the embryo sheet must bestow punching (Blanking), punching (Punching), guide hole filling (Via Filling), thick-film metalliz, repeatedly carry out sintering (Firing/Sintering) again behind the pressure processing procedures such as (Lamination), promptly finish the ceramic structure dress base material of tool multilayer order wire circuit after top layer nickel is electroplated (Nickel Plating), pin welding (Lead Attach) and tested, the aluminum oxide multilayer ceramic is online.
And the high speed of output of the height of the miniaturization of electronic installation, semiconductor subassembly and signal processing makes microelectronics Packaging new technologies and methods, new texture occur.New encapsulation mode is had higher requirement to packaged material, i.e. good heat-conducting, low specific inductivity and dielectric loss, the thermal expansivity that is complementary with chip, good physical strength and processability.At present, a large amount of air-tight packaging ceramic substrate materials that use mainly are aluminum oxide (Al
2O
3) and beryllium oxide (BeO).Yet the one-component ceramic packaged material is because sintering temperature is higher, and more than 1600 ℃, return path materials is based on W, Mo usually.Its shortcoming be conductor material the resistivity height, cause loss big, and the insulating material specific inductivity causes signal delay time long greatly, and production cost is higher.So people have turned to low-temperature sintered ceramics system (LTCC) to sight, sintering temperature is usually at 850-1000) ℃ between, the excellence conductor that return path materials is Cu, Ag constant resistance rate is little.The composition of LTCC system is with Al
2O
3With glass or devitrified glass be main, but this class material causes the thermal conductivity of material lower because the thermal conductivity of its main component is high and contain glassy phase about 50wt% usually.
The inventor is because the shortcoming of aforementioned prior art, be engaged in the manufacturing experience and the technology accumulation of various electrical condensers according to it, method at the various solutions of the concentrated research of above-mentioned disappearance, after through constantly research, experiment and improvement, finally development and Design goes out the invention of a kind of brand-new solid electrolytic capacitor of the present invention, in the hope of the disappearance that prior art produced of forgoing.
Summary of the invention
The objective of the invention is to, a kind of low-temperature co-burning ceramic material is provided, be used for basic composite diphase material of low-temperature sintering aluminium nitride (AlN) of Electronic Packaging and preparation method thereof.
The present invention adopts following technique means to realize:
A kind of low-temperature co-burning ceramic material mainly comprises the high thermal conductivity stupalith of aluminium nitride or beryllium oxide, silicon carbide etc. and the Powdered glass material of borosilicate series.
The high thermal conductivity stupalith of aforesaid aluminium nitride and the Powdered glass material of borosilicate series are uniform mixing.
The high thermal conductivity of aforesaid aluminium nitride mixes the described glass material of 30～50 weight parts than the aluminium nitride that is 50～80 weight parts.
In above-mentioned materials, added proper amount of solvent.
In above-mentioned materials, add an amount of sintering accessory agent or fluidizer.
The present invention compared with prior art has following remarkable advantages and advantage:
It is main raw material that the present invention adopts aluminium nitride (AlN) powder, has designed the low melting glass that borosilicate series is formed, and has added suitable sintering aid, has successfully prepared low-temperature sintering aluminium nitride (AlN)/glass composite material under 850-1000 ℃ temperature.Systematically analyze the factor that influences sintering, thermal property, dielectric properties and mechanical property, studied of the influence of aluminium nitride (AlN) granularity theoretically heat conductivility.By the composition of designing material, improve the over-all properties of composite diphase material.Making the thermal conductivity of material bring up to 11W/mK. has obtained low specific inductivity 4.5-7 (room temperature, 1MHZ), thermal expansivity has been controlled at 5-10 * 10-6/K, can satisfy the needs of high density packing well.
The present invention according to the softening temperature of the low melting point borosilicate glass of introducing in the composite diphase material and with the wetting property of aluminium nitride (AlN) powder, adopted the unique low-temperature sintering process, under the acting in conjunction of pressure and liquid phase viscosity flow, aluminium nitride (AlN) content is being lower than under 1000 ℃ at the composite diphase material that 50-80wt% forms, and can reach densification in 2 hours.This project has also been carried out The Research of Relevant Technology such as the flow casting molding of aluminium nitride (AlN)/glass composite base plate and metal line, for aluminium nitride (the AlN)/application of glass composite base plate material in low temperature co-fired technology laid a good foundation.
Description of drawings
Fig. 1 is the heat-conduction coefficient comparison diagram of the embodiment of the invention 1 and reference examples 1;
Fig. 2 is the heat-conduction coefficient comparison diagram of the embodiment of the invention 2,3,4.
Embodiment
Below in conjunction with accompanying drawing specific embodiments of the invention are illustrated:
Low-temperature co-burning ceramic material of the present invention, adopting aluminium nitride (AlN) powder is main raw material, the low melting glass that cooperates borosilicate series to form, and add suitable sintering aid, under 750-900 ℃ temperature, successfully prepared low-temperature sintering aluminium nitride (AlN)/glass composite material.
Composition by designing material, improve the over-all properties of composite diphase material, make the thermal conductivity of material bring up to 11W/mK. obtained low specific inductivity 4.5-7 (room temperature, 1MHZ), thermal expansivity is controlled at 5-10 * 10-6/K, can satisfy the needs of high density packing well.
The present invention according to the softening temperature of the low melting point borosilicate glass of introducing in the composite diphase material and with the wetting property of aluminium nitride (AlN) powder, adopted the unique low-temperature sintering process, under the acting in conjunction of pressure and liquid phase viscosity flow, aluminium nitride (AlN) content is being lower than under 1000 ℃ at the composite diphase material that 50-80wt% forms, and can reach densification in 2 hours.The contriver has also carried out The Research of Relevant Technology such as the flow casting molding of aluminium nitride (AlN)/glass composite base plate and metal line, wishes to contribute to some extent in aluminium nitride (the AlN)/application of glass composite base plate material in low temperature co-fired technology.
The present invention uses aluminium nitride to be low-temperature co-burning ceramic material, aluminium nitride has six side Wurtzite structures, compare with aluminum oxide, it has very good thermal conductivity (167-223W/m ℃), lower dielectric coefficient (about 8.8), thermal expansivity more close (4.5 * 10-6/ ℃) and density (3.21gm/cm with silicon
3), also because it can approach/thick-film metalliz processing procedure compatibility with various, so in electronic packaging, use quite extensive.Utilize carbothermic method (CarbonthermicReduction) or the direct nitrogenizing reaction of aluminium, after aluminium nitride powder is made, again with hot-forming (Hot Pressing) or do not have pressure type sintering (Pressureless Sintering) and make the substrate material.In firing processing procedure, note control oxygen and impurity content, in order to avoid the heat conduction property of aluminium nitride suffers damage.
On using, the residual carbon (Residual Carbon) that forms for the burn off organic composition time is removed in order to avoid influence the electrical specification of ceramic substrate, must use copper to be the thick film conductor metal.
In low temperature co-fired processing procedure, the selection of atmosphere is relevant with the thick film metal kind in heat-treat condition and the stove, must carry out 350 ℃ earlier, 1 hour organic composition burn off when using gold or silver-colored metal cream, be warmed up to 850 ℃ again and hold temperature and finished sintering in 30 minutes, the process of burning can be carried out in air altogether.If use copper metal cream, then the burn off of organic composition still carries out in air, and heating condition is 550 ℃, 5 to 6 hours; Because of being actually cupric oxide blending organic composition, makes by copper metal cream, so must be earlier at 300 to 400 ℃, carry out about 30 minutes thermal treatment with copper oxide reduction in the atmosphere of nitrogen/hydrogen or carbon monoxide/carbon dioxide mix gas, then in nitrogen atmosphere with 750 to 850 ℃, sintering is finished in 20 to 30 minutes thermal treatment.
＜embodiment 1 〉
The low-temperature co-burning ceramic material system of the high heat-conduction coefficient of one of the present invention embodiment is with the aluminium nitride of metering 45%wt. glass powder and 55%wt., behind the uniform mixing, use suitable molding mode to make the about 1.5mm ceramic green sheet of thickness as drawing together the cutter moulding, after cutting into appropriate size with cutter again, through about 60 minutes of 800 ℃ of sintering, a fine and close ceramic test piece.
＜reference examples 1 〉
Existing low-temperature co-burning ceramic material is filling material such as the aluminum oxide with metering 45%wt. glass powder and the general LTCC of 55%wt., behind the uniform mixing, use suitable molding mode to make the about 1.5mm ceramic green sheet of thickness as drawing together the cutter moulding, after cutting into appropriate size with cutter again, through about 60 minutes of 800 ℃ of sintering, a fine and close ceramic test piece.
＜conclusion 1 〉
The ceramic test piece of this embodiment 1 and reference examples 1 is measured heat-conduction coefficient with the heat-conduction coefficient instrument, its result is shown in the 1st figure, shown in the 1st figure, can find out the low-temperature co-burning ceramic material of embodiments of the invention 1 gained, the test piece of its agglomerating pottery, heat-conduction coefficient reaches 12.5w/mk, and existing low-temperature co-burning ceramic material, the test piece of its agglomerating pottery, its heat-conduction coefficient only is 3.8w/mk.
＜embodiment 2 〉
Another embodiment of the present invention, the low-temperature co-burning ceramic material of high heat-conduction coefficient is respectively to measure the aluminium nitride of 45%wt. glass powder and 55%wt., behind the uniform mixing, use suitable molding mode to make the about 1.5mm ceramic green sheet of thickness as drawing together the cutter moulding, after cutting into appropriate size with cutter again, through about 60 minutes of 800 ℃ of sintering, a fine and close ceramic test piece (A).
＜embodiment 3 〉
The low-temperature co-burning ceramic material of the high heat-conduction coefficient of another embodiment of the present invention is respectively to measure the aluminium nitride of 40%wt. glass powder and 60%wt., behind the uniform mixing, use suitable molding mode to make the about 1.5mm ceramic green sheet of thickness as drawing together the cutter moulding, after cutting into appropriate size with cutter again, through about 60 minutes of 800 ℃ of sintering, a fine and close ceramic test piece (B).
＜embodiment 4 〉
The low-temperature co-burning ceramic material of the high heat-conduction coefficient of an embodiment more of the present invention is respectively to measure the aluminium nitride of 35%wt. glass powder and 65%wt., behind the uniform mixing, use suitable molding mode to make the about 1.5mm ceramic green sheet of thickness as drawing together the cutter moulding, after cutting into appropriate size with cutter again, through about 60 minutes of 800 ℃ of sintering, a fine and close ceramic test piece (C).
＜conclusion 2 〉
Three kinds of ceramic test pieces of embodiment 2, embodiment 3, embodiment 4 gained are measured heat-conduction coefficient with the heat-conduction coefficient instrument, and its result shown in this figure, can find out that then heat-conduction coefficient is good more if the composition of aluminium nitride is high more shown in the 2nd figure.
It should be noted that at last: above embodiment only in order to the explanation the present invention and and unrestricted technical scheme described in the invention; Therefore, although this specification sheets has been described in detail the present invention with reference to each above-mentioned embodiment,, those of ordinary skill in the art should be appreciated that still and can make amendment or be equal to replacement the present invention; And all do not break away from the technical scheme and the improvement thereof of the spirit and scope of invention, and it all should be encompassed in the middle of the claim scope of the present invention.
Claims (5)
1. low-temperature co-burning ceramic material, it is characterized in that: low-temperature co-burning ceramic material mainly comprises aluminium nitride or beryllium oxide, the high thermal conductivity stupalith of silicon carbide and the Powdered glass material of borosilicate series.
2. low-temperature co-burning ceramic material according to claim 1 is characterized in that: wherein the Powdered glass material of the high thermal conductivity stupalith of aluminium nitride and borosilicate series is a uniform mixing.
3. low-temperature co-burning ceramic material according to claim 1 is characterized in that: wherein the high thermal conductivity of aluminium nitride mixes the described glass material of 30～50 weight parts than the aluminium nitride that is 50～80 weight parts.
4. low-temperature co-burning ceramic material according to claim 1 is characterized in that: wherein added proper amount of solvent.
5. low-temperature co-burning ceramic material according to claim 1 is characterized in that: wherein add an amount of sintering accessory agent or fluidizer.
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|---|---|---|---|
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102515714A (en) * | 2012-01-04 | 2012-06-27 | 中国科学院上海硅酸盐研究所 | Low-temperature co-fired ceramic material with high thermal conductivity and preparation method thereof |
| CN102531392A (en) * | 2012-02-01 | 2012-07-04 | 云南云天化股份有限公司 | Low-temperature co-fired ceramic material and preparation method thereof |
| CN103466950A (en) * | 2012-06-30 | 2013-12-25 | 新化县维新电子有限公司 | High-thermal-conductivity microcrystalline glass substrate material |
| CN103482985A (en) * | 2013-09-16 | 2014-01-01 | 中国科学院上海硅酸盐研究所 | Low-temperature co-fired ceramic tape casting material and preparing method and application thereof |
| CN104446338A (en) * | 2014-11-21 | 2015-03-25 | 柳州创宇科技有限公司 | Calcium aluminum silicon glass base low-temperature cofiring ceramic material and preparation method thereof |
| CN108503230A (en) * | 2018-04-24 | 2018-09-07 | 佛山市奥耶克思机械设备有限公司 | A kind of package substrate composite material and preparation method |
| CN113213905A (en) * | 2021-05-21 | 2021-08-06 | 景德镇陶瓷大学 | Cordierite-based microcrystalline glass combined Al2O3-SiO2System ceramic material and preparation method thereof |
| CN114401933A (en) * | 2019-08-15 | 2022-04-26 | 万腾荣公司 | Beryllium oxide base |
| CN114853347A (en) * | 2022-05-13 | 2022-08-05 | 湖南博翔新材料有限公司 | High-thermal-conductivity low-temperature co-fired glass ceramic substrate and preparation method thereof |
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2006
- 2006-10-09 CN CNA2006101404775A patent/CN101161605A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102515714A (en) * | 2012-01-04 | 2012-06-27 | 中国科学院上海硅酸盐研究所 | Low-temperature co-fired ceramic material with high thermal conductivity and preparation method thereof |
| CN102531392A (en) * | 2012-02-01 | 2012-07-04 | 云南云天化股份有限公司 | Low-temperature co-fired ceramic material and preparation method thereof |
| CN103466950B (en) * | 2012-06-30 | 2016-02-03 | 新化县维新电子有限公司 | A kind of high heat conductance crystallite glass substrate material |
| CN103466950A (en) * | 2012-06-30 | 2013-12-25 | 新化县维新电子有限公司 | High-thermal-conductivity microcrystalline glass substrate material |
| CN103482985A (en) * | 2013-09-16 | 2014-01-01 | 中国科学院上海硅酸盐研究所 | Low-temperature co-fired ceramic tape casting material and preparing method and application thereof |
| CN103482985B (en) * | 2013-09-16 | 2015-02-04 | 中国科学院上海硅酸盐研究所 | Low-temperature co-fired ceramic tape casting material and preparing method and application thereof |
| CN104446338A (en) * | 2014-11-21 | 2015-03-25 | 柳州创宇科技有限公司 | Calcium aluminum silicon glass base low-temperature cofiring ceramic material and preparation method thereof |
| CN104446338B (en) * | 2014-11-21 | 2016-05-11 | 柳州创宇科技有限公司 | A kind of calcium aluminosilicate glass base low-temperature cofired ceramic material and preparation method thereof |
| CN108503230A (en) * | 2018-04-24 | 2018-09-07 | 佛山市奥耶克思机械设备有限公司 | A kind of package substrate composite material and preparation method |
| CN114401933A (en) * | 2019-08-15 | 2022-04-26 | 万腾荣公司 | Beryllium oxide base |
| CN114401933B (en) * | 2019-08-15 | 2023-11-24 | 万腾荣公司 | beryllium oxide base |
| CN113213905A (en) * | 2021-05-21 | 2021-08-06 | 景德镇陶瓷大学 | Cordierite-based microcrystalline glass combined Al2O3-SiO2System ceramic material and preparation method thereof |
| CN114853347A (en) * | 2022-05-13 | 2022-08-05 | 湖南博翔新材料有限公司 | High-thermal-conductivity low-temperature co-fired glass ceramic substrate and preparation method thereof |
| CN114853347B (en) * | 2022-05-13 | 2023-12-05 | 湖南博翔新材料有限公司 | High-heat-conductivity low-temperature co-fired glass ceramic substrate and preparation method thereof |
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