CN101154770A - Method for flexible interlinkage with built-in type device - Google Patents
Method for flexible interlinkage with built-in type device Download PDFInfo
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- CN101154770A CN101154770A CNA2007100451097A CN200710045109A CN101154770A CN 101154770 A CN101154770 A CN 101154770A CN A2007100451097 A CNA2007100451097 A CN A2007100451097A CN 200710045109 A CN200710045109 A CN 200710045109A CN 101154770 A CN101154770 A CN 101154770A
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Abstract
The invention discloses a method for being flexibly connected with an implantation type device, comprising the following steps that: firstly, a polymer basal layer is arranged on a base sheet with a sacrificial layer, and according to the requirement of the ready-to-be-connected implantation type device, the polymer basal layer is correspondingly provided with through holes; secondly, a metallic layer is arranged on the polymer basal layer and does not cover the through holes, and an insulating layer arranged on the metallic layer is provided with corresponding openings to expose the through holes; thirdly the sacrificial layer is eroded by the etching method and the sandwich type flexible interconnection film is released from the base sheet, a bonding pad point metallic layer of the ready-to-be-connected implantation type device is glued on the surface of the flexible interconnection film and aims at the through holes, the through holes are conducted with a metal column by the galvanization growth, thereby realizing the flexible connection with the ready-to-be-connected implantation type device and effectively avoiding the defect that the cold joint is frequently occurred in prior art; moreover, because the flexible interconnection film is small in volume, light in weight and is easy to be integrated, the implantation damage is greatly reduced.
Description
Technical field
The present invention relates to a kind of and the method built-in type device flexible interconnect.
Background technology
" built-in type device " become very important part in the biomedical engineering, and it mainly comprises: equipment such as all kinds of implanted measuring systems, implanted stimulator, implanted medication (control) device, implanted artificial organs and servicing unit.Usually the requirement to " built-in type device " is: good biocompatibility, reliability height, be suitable for long-term implantation the in the body, and necessary volume is little, in light weight, and reduce to implant damage as far as possible.And along with the progress of microelectric technique and little working ability, people have begun with MEMS (micro electro mechanical system) (Micro-electro-mechanical system, MEMS) technology is incorporated into volume, weight and the power consumption of built-in type device field further to reduce " built-in type device ", can reduce to implant damage thus, the selectivity that improves record or stimulate.But how to realize between the implanted micro element and effective connection of implanted micro element and external record or stimulating apparatus is a relatively stubborn problem always.Because many implanted micro elements (such as artificial cochlea and artificial retina) often need to have simultaneously dozens or even hundreds of parallel connection that communicates with external equipment, if utilize conventional metallic cable to connect, the volume of the device that forms can be very with respect to implant procedure big, be difficult to satisfy little, the lightweight requirement of built-in type device volume, therefore, many research groups have begun the exploitation based on the miniature thin-film interconnection line of micro-processing technology.People such as Meyer have developed a kind of " MicroFlex " technology, utilize spun gold ball bond machine to form rivet arrangement, the via pad of micro-machined film interconnection line is communicated with pad on the implanted chip (sees also list of references: Meyer, et al. " High density interconnectsand flexible hybrid assemblies for active biomedical implants ", IEEE TRANSACTIONSON ADVANCED PACKAGING, 2001,24:366-374.).But this technology utilizes the mechanical force of pressure welding to realize the contact of double layer of metal pad, and the easy effect that forms " rosin joint ", reliability are difficult to guarantee; And the spun gold diameter that is used for pressure welding is usually greater than 50 μ m, and therefore the interconnection device based on this technology is being difficult to obtain bigger raising aspect the interconnection line density.
In sum, how to solve in the prior art with the electric connection problem of built-in type device is real and become the technical task that those skilled in the art receive solution.
Summary of the invention
The object of the present invention is to provide a kind of and the method built-in type device flexible interconnect, interconnection is prone to rosin joint and the limited shortcoming of Connection Density in the prior art to avoid.
In order to achieve the above object, the method of provided by the invention and built-in type device flexible interconnect, it comprises step: 1) produce polymeric substrate layers by spin coating or vapour deposition having on the substrate of sacrifice layer, and produce respective through hole in described polymeric substrate layers relevant position by photoetching or reactive ion etching according to the needs of built-in type device to be connected; 2) on described polymeric substrate layers, produce metal level, and make described metal level not cover described through hole by sputter and stripping technology; 3) on described metal level by spin coating or vapour deposition insulating material forming isolated insulation layer, and form corresponding first opening in described isolated insulation layer relevant position by photoetching or reactive ion etching, to expose described through hole according to the position of described through hole; 4) adopt acid corrosion or the described on-chip sacrifice layer of electrochemical corrosion to discharge by the formed sandwich flexible interconnect film of described polymeric substrate layers, metal level and isolated insulation layer; 5) the pad point metal level of described built-in type device to be connected is fitted described flexible interconnect film the surface and aim at described through hole, be Seed Layer with described pad point metal level again, adopt plating mode in described through hole, to generate metal column so that the pad point metal level of described built-in type device to be connected and the metal level electrical communication that described flexible interconnect film has.
Wherein, describedly also comprise step with the method for built-in type device flexible interconnect: (1) forms corresponding second opening in described isolated insulation layer relevant position by photoetching or reactive ion etching according to the needs of the external equipment that will be connected with described built-in type device to be connected, the part metals layer that can be connected with described external equipment with exposure; (2) at the casting insulated polymer in described metal column place to form encapsulating structure; (3) the part metals layer that the electric connection part and the described flexible interconnect film of described external equipment exposed electrically connects to finish and the flexibly connecting of described built-in type device to be connected.
Preferable, the material of described sacrifice layer can be silicon dioxide, aluminium, copper, a kind of in chromium and the titanium, its thickness is between 1000 dusts to 2 micron, described polymeric substrates layer material can be polyimides or Parylene, its thickness is between 1000 dusts to 50 micron, described metal layer material can be gold, a kind of in platinum and the iridium, its thickness is between 100 dusts to 1 micron, described isolated insulation layer material can be silicon dioxide, silicon nitride, polyimides or Parylene, its thickness between 100 dusts to 50 micron, the material of described metal column can be nickel, a kind of in copper and the gold.
In sum, the method of of the present invention and built-in type device flexible interconnect adopts the flexible interconnect film to realize and the flexibly connecting of built-in type device, effectively avoided interconnecting in the prior art and be prone to the shortcoming of " rosin joint ", and the flexible interconnect membrane volume is little, and is in light weight, is easy to integrated, can reduce the implantation damage of built-in type device greatly, and the reliability height that is electrically connected, whole manufacture craft is simple, ripe, is easy to produce in batches.
Description of drawings
Fig. 1 is of the present invention and the schematic diagram of the formed polymeric substrate layers of method of built-in type device flexible interconnect.
Fig. 2 is of the present invention and the schematic diagram of the formed metal level of method of built-in type device flexible interconnect.
Fig. 3 is of the present invention and the formed isolated insulation layer schematic diagram of the method built-in type device flexible interconnect.
Fig. 4 is the schematic diagram that the formed flexible interconnect film of the method with the built-in type device flexible interconnect of the present invention docks with implanted chip bonding pad point to be connected.
Fig. 5 is of the present invention and the formed metal column syndeton of the method built-in type device flexible interconnect schematic diagram.
Fig. 6 is of the present invention and the formed encapsulating structure schematic diagram of the method built-in type device flexible interconnect.
Fig. 7 is the connection diagram of built-in type device and external equipment in the method for of the present invention and built-in type device flexible interconnect.
Embodiment
Further specify the detailed process of the method for of the present invention and built-in type device flexible interconnect below with reference to accompanying drawing with a built-in type device and peripheral component interconnect:
At first, as shown in Figure 1, utilize conventional semiconductor technology cleaning method to clean silicon chip 1, and at the sacrifice layer of the about 1 micron thickness aluminium film 2 of surface thereof evaporation preparation as release, then, spin coating photo-sensistive polyimide Durimide 7510 (3000 rev/mins, 30 seconds), making place polymeric substrate layers 3, and produce the full solidification of implementation structure in 4,350 ℃ of nitrogen environments of respective through hole by photoetching or reactive ion etching in described polymeric substrate layers relevant position according to the needs of built-in type device to be connected; In addition, also can adopt vapour deposition to make polymeric substrate layers, described polymeric substrates layer material also can be Parylene, and its thickness can be between 1000 dusts to 50 micron; Have, the material of the sacrifice layer of preparation also can be silicon dioxide, copper, chromium or titanium again, and its thickness can be between 1000 dusts to 2 micron.
Then, as shown in Figure 2,120 ℃ of baking formed silicon chips 20 minutes get rid of on described polymeric substrate layers and are coated with 6809 photoresists (3000 rev/mins, 30 seconds), and baking is 20 minutes before 80 ℃; Photoetching, sputter iridium/platinum (Pt)/titanium (Ti) (2500 ) in conjunction with stripping technology (Lift-off) technology, forms metal level 5, and its thickness can be between 100 dusts to 1 micron, and make described metal level not cover described through hole.
Then, as shown in Figure 3, spin coating photo-sensistive polyimide Durimide is 7510 (3000 rev/mins on described metal level 5,30 seconds), make isolated insulation layer 6, and form first opening and second opening in described isolated insulation layer 6 corresponding each position by photoetching or reactive ion etching according to the needs of the external equipment that will be connected and the position of described through hole with described built-in type device to be connected, with the part metals layer that exposes described through hole and can be connected with described external equipment, just form the metal interconnecting wires 9 of via pad point 7 and pin pad point 8 and dielectric layers clamping, the full solidification of implementation structure in 350 ℃ of nitrogen environments, in addition, described isolated insulation layer material also can be silicon dioxide, silicon nitride, or Parylene, its thickness can be between 100 dusts to 50 micron, have again, also can adopt vapour deposition process to form described isolated insulation layer, in the present embodiment, described external equipment can be external record or stimulation apparatus.
Then, as shown in Figure 4, the aluminium film is to discharge by the formed sandwich flexible interconnect of described polymeric substrate layers, metal level and isolated insulation layer film on employing acid corrosion or the electrochemical etching method corrosion silicon chip.
Then, shown in Fig. 4 and 5, with the pad point metal level of described built-in type device to be connected fit described flexible interconnect film the surface and aim at described through hole, be Seed Layer with described pad point metal level again, adopt plating mode in described respective through hole, to generate metal column so that the pad point metal level of described built-in type device to be connected and the metal level electrical communication that described flexible interconnect film has, in the present embodiment, utilize alignment device that the via pad lattice array of described flexible interconnect film is aimed at the pad lattice array 11 on the implanted chip 10 to be connected, and it is fixing that both are fitted, to aim at then, the described flexible interconnect film and the implanted chip 10 that fix place electroplating bath, electronickelling (Ni) forms the metal column 12 that connects, mutually neat until the metal column plane with the polyimide layer upper surface, in addition, described metal column also can adopt copper or gold copper-base alloy.
Then, as shown in Figure 6, at the casting insulated polymer in described metal column place (PDMS) and placed under 80 ℃ of environment 2 hours, solidify to form encapsulating structure 13.
At last, as shown in Figure 7, the electric connection part of the described external equipment part metals layer that to be winding displacement socket 14 expose with described flexible interconnect film is electrically connected to finish and the flexibly connecting of described built-in type device to be connected.
In addition, of the present invention and the method built-in type device flexible interconnect is not limited only to realize with built-in type device and peripheral component interconnect, for example, also can apply the present invention to a plurality of implanted chips between interconnection, its detailed process and above-mentioned steps are similar, those skilled in the art can finish voluntarily according to above stated specification, so be not described in detail in this.
In sum, the method of of the present invention and built-in type device flexible interconnect adopts the flexible interconnect film to realize and the flexibly connecting of built-in type device, effectively avoided interconnecting in the prior art and be prone to " rosin joint " and the limited shortcoming of Connection Density, and the flexible interconnect membrane volume is little, and is in light weight, is easy to integrated, can reduce the implantation damage of built-in type device greatly, and the reliability height that is electrically connected, whole manufacture craft is simple, ripe, is easy to produce in batches.
Claims (7)
1. method with the built-in type device flexible interconnect is characterized in that comprising:
1) on substrate, produces polymeric substrate layers, and produce respective through hole in described polymeric substrate layers relevant position by photoetching or reactive ion etching according to the needs of built-in type device to be connected by spin coating or vapour deposition with sacrifice layer;
2) on described polymeric substrate layers, produce metal level, and make described metal level not cover described through hole by sputter and stripping technology;
3) on described metal level by spin coating or vapour deposition insulating material forming isolated insulation layer, and form corresponding first opening in described isolated insulation layer relevant position by photoetching or reactive ion etching, to expose described through hole according to the position of described through hole;
4) adopt acid corrosion or the described on-chip sacrifice layer of electrochemical corrosion to discharge by the formed sandwich flexible interconnect of described polymeric substrate layers, metal level and isolated insulation layer film;
5) the pad point metal level of described built-in type device to be connected is fitted described flexible interconnect film the surface and aim at described through hole, be Seed Layer with described pad point metal level again, adopt plating mode in described through hole, to generate metal column so that the pad point metal level of described built-in type device to be connected and the metal level electrical communication that described flexible interconnect film has.
2. the method for as claimed in claim 1 and built-in type device flexible interconnect is characterized in that also comprising step:
(1) needs according to the external equipment that will be connected with described built-in type device to be connected form corresponding second opening in described isolated insulation layer relevant position by photoetching or reactive ion etching, the part metals layer that can be connected with described external equipment with exposure;
(2) at the casting insulated polymer in described metal column place to form encapsulating structure;
(3) the part metals layer that the electric connection part and the described flexible interconnect film of described external equipment exposed electrically connects to finish and the flexibly connecting of described built-in type device to be connected.
3. the method for as claimed in claim 1 and built-in type device flexible interconnect is characterized in that: the material of described sacrifice layer is a kind of in silicon dioxide, aluminium, copper, chromium and the titanium, and its thickness is between 1000 dusts to 2 micron.
4. the method for as claimed in claim 1 and built-in type device flexible interconnect, it is characterized in that: described polymeric substrates layer material is polyimides or Parylene, its thickness is between 1000 dusts to 50 micron.
5. the method for as claimed in claim 1 and built-in type device flexible interconnect is characterized in that: described metal layer thickness is between 100 dusts to 1 micron.
6. the method for as claimed in claim 1 and built-in type device flexible interconnect is characterized in that: described isolated insulation layer material is a kind of in silicon dioxide, silicon nitride, polyimides and the Parylene, and its thickness is between 100 dusts to 50 micron.
7. the method for as claimed in claim 1 and built-in type device flexible interconnect is characterized in that: the material of described metal column is a kind of in nickel, copper and the gold.
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| CNB2007100451097A CN100466381C (en) | 2007-08-21 | 2007-08-21 | Method for flexible interlinkage with built-in type device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102428613A (en) * | 2009-04-23 | 2012-04-25 | 鲁昂大学医学中心 | Subcutaneous device for electrical percutaneous connection |
| CN103040513A (en) * | 2011-10-14 | 2013-04-17 | 巴奥米特制造公司 | Percutaneous plug for delivering power to implantable subcutaneous electrical socket |
| CN104591074A (en) * | 2015-01-22 | 2015-05-06 | 华东师范大学 | Flexible silicon film based on sandwich structure and preparation method of flexible silicon film |
| CN107301958A (en) * | 2017-06-07 | 2017-10-27 | 杭州暖芯迦电子科技有限公司 | A kind of wire bonding apparatus and bonding method of implanted microelectronic product |
| CN110072336A (en) * | 2018-01-23 | 2019-07-30 | 北京华碳科技有限责任公司 | The method for separating flexible base board and rigid conductive carrier |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1251323C (en) * | 2002-02-07 | 2006-04-12 | 联华电子股份有限公司 | Method of improving surface flatness of embedded interlayer metal dielectric layer |
| US6930034B2 (en) * | 2002-12-27 | 2005-08-16 | International Business Machines Corporation | Robust ultra-low k interconnect structures using bridge-then-metallization fabrication sequence |
-
2007
- 2007-08-21 CN CNB2007100451097A patent/CN100466381C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102428613A (en) * | 2009-04-23 | 2012-04-25 | 鲁昂大学医学中心 | Subcutaneous device for electrical percutaneous connection |
| CN102428613B (en) * | 2009-04-23 | 2014-09-10 | 鲁昂大学医学中心 | Subcutaneous device for electrical percutaneous connection |
| CN103040513A (en) * | 2011-10-14 | 2013-04-17 | 巴奥米特制造公司 | Percutaneous plug for delivering power to implantable subcutaneous electrical socket |
| CN103040513B (en) * | 2011-10-14 | 2017-03-01 | 巴奥米特制造公司 | The subcutaneous electrical socket of implanted and percutaneous plug |
| CN104591074A (en) * | 2015-01-22 | 2015-05-06 | 华东师范大学 | Flexible silicon film based on sandwich structure and preparation method of flexible silicon film |
| CN104591074B (en) * | 2015-01-22 | 2017-01-04 | 华东师范大学 | Flexible silicon film based on sandwich structure and preparation method thereof |
| CN107301958A (en) * | 2017-06-07 | 2017-10-27 | 杭州暖芯迦电子科技有限公司 | A kind of wire bonding apparatus and bonding method of implanted microelectronic product |
| CN110072336A (en) * | 2018-01-23 | 2019-07-30 | 北京华碳科技有限责任公司 | The method for separating flexible base board and rigid conductive carrier |
| CN110072336B (en) * | 2018-01-23 | 2020-11-06 | 北京华碳科技有限责任公司 | Method for separating flexible substrate and rigid conductive carrier |
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| CN100466381C (en) | 2009-03-04 |
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