CN101150153A - A micron wave length THz radiation transmission chip and its making method - Google Patents
A micron wave length THz radiation transmission chip and its making method Download PDFInfo
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- CN101150153A CN101150153A CNA2006101269970A CN200610126997A CN101150153A CN 101150153 A CN101150153 A CN 101150153A CN A2006101269970 A CNA2006101269970 A CN A2006101269970A CN 200610126997 A CN200610126997 A CN 200610126997A CN 101150153 A CN101150153 A CN 101150153A
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- wave length
- thz radiation
- radiation transmission
- transmission chip
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Abstract
This invention relates to a THz radiation chip of one micron wave length including: a substrate, a buffer layer prepared on the substrate, a Bragg reflection mirror set on the buffer layer to form a reflection mirror of high reflection rate and multiple quantum wells including multiple pairs of stranied compensated mono-quantum wells, in which, a low temperature growing technology is applied to process the multiple pairs of strained compensated quantum wells on the Bragg reflection mirror to absorb light and relax photocarriers, a pair of strip Ti-Au electrodes is made on the multiple quantum wells to play the role of offsetting current and strengthening the THz radiation.
Description
Technical field
The present invention relates to a kind of THz radiation transmission chip and preparation method thereof, be meant micron wave length THz radiation transmission chip and preparation method thereof especially.
Background technology
(THz, 1THz=1012Hz) frequency range is meant the electromagnetic radiation zone of frequency from 0.3THz to 10THz, between millimeter wave and infrared light to Terahertz.For a long time, because the electromagnetic wave that electronics device is realized is difficult to surpass 100GHz, and semiconductor laser wavelength is difficult to reach middle red sector territory, add and lack effective THz detection method, people are very limited for the understanding of this wave band electromagnetic radiation character, so that this wave band is called as the THz space in the electromagnetic spectrum, also be last frequency window that pending comprehensive research is arranged in the electromagnetic spectrum.Why TH z technology causes people's extensive concern in recent years, be because the THz spectrum (comprising emission, reflection and transmission) of material includes abundant physics and chemical information, have great scientific value and wide application prospect at aspects such as object image-forming, environmental monitoring, medical diagnosis, radio astronomy, broadband mobile communication, satellite communication and military radars.Produce the most frequently used method of THz radiation at present and adopt ultra-short pulse laser to excite the semiconductor under bias field or the action of a magnetic field to produce, as the femtosecond free electron laser being shone unadulterated InAs or GaAs wafer.The TH z radiation-emitting semi-conductor chip of a kind of low-temperature epitaxy GaAs film in conjunction with the electric field bias of Bragg mirror appears in recent years, be applicable to that 800nm titanium jewel femto-second laser excites, but this chip double as in laser is chamber mirror and self-starting locked mode absorber, and the THz radiation efficiency height and the power output of realization are big.But the cost of titanium jewel femto-second laser own is high, and power output is little, has limited the development of system.Recent years, adopt semiconductor saturable absorbing mirror directly carry out passive mode locking (absorbing mirror only plays the self-starting effect in the titanium jewel femto-second laser) to mix ytterbium one micron wave length femtosecond solid state laser (perhaps fiber laser) ripe gradually.This class femto-second laser price only is equivalent to the part of ti sapphire laser, and power output is big, and is simple in structure and be easy to safeguard, is the desirable femtosecond laser light source that is suitable for producing the THz radiation.
Summary of the invention
The objective of the invention is to, a kind of micron wave length THz radiation transmission chip and preparation method thereof is provided, refer in particular to and a kind ofly be fit to low-temperature epitaxy InGaAs film that a micron wave length femtosecond laser excites in conjunction with micron wave length THz radiation transmission chip of the electric field bias of Bragg mirror and preparation method thereof, In 0.25Ga 0.75 AsGaAs well region and GaAs that this transmitting chip and preparation method thereof adopts GaO.5AsO.5P strain compensation floor to be clipped in quantum well build between the district, by selecting certain thickness, make the dependent variable of single quantum well significantly reduce, thereby also make the strain of Multiple Quantum Well significantly reduce, guarantee the normal use of device.
An a kind of micron wave length THz radiation transmission chip of the present invention is characterized in that, comprising:
One substrate;
One resilient coating, this resilient coating is produced on the substrate;
One Bragg mirror, this Bragg mirror is produced on the resilient coating, forms the speculum of a high reflectance;
Multiple Quantum Well adopts low temperature growth techniques that many quantum well to strain compensation are produced on the Bragg mirror, and this Multiple Quantum Well comprises many single quantum wells to strain compensation, and this Multiple Quantum Well plays light absorption and photo-generated carrier relaxation;
A pair of Ti-Au electrode, this electrode are band electrode, and this Ti-Au electrode is produced on the Multiple Quantum Well, play the electric current biasing after this Ti-Au electrifying electrodes, strengthen the effect of THz radiation.
Wherein Multiple Quantum Well comprises:
Build layer once;
One layer of compensation, this layer of compensation are produced on down to be built on the layer;
One uptake zone, this uptake zone is produced on the layer of compensation;
One on base layer, this on base layer is produced on the on base layer.
The material of wherein said substrate is the n+GaAs substrate.
The material of wherein said uptake zone is In 0.25 Ga 0.75As.
The material of wherein said layer of compensation is Ga 0.5 As 0.5P.
Wherein Multiple Quantum Well is that 5-10 is right.
Wherein the thickness of resilient coating is 200nm-500nm.
Wherein the thickness of every pair of quantum well uptake zone is 8nm-10nm.
Wherein adopting the growth temperature of the uptake zone that low temperature growth techniques makes on Bragg mirror is 500 ℃-550 ℃.
Wherein the thickness of every pair of quantum well compensating basin is 10nm-12nm.
Two ribbon Ti-Au electrodes wherein, the width of electrode is 10-20 μ m, two electrodes are at a distance of 50-100 μ m.
The manufacture method of an a kind of micron wave length THz radiation transmission chip of the present invention is characterized in that, comprises the steps:
Step 1: get a substrate;
Step 2: growth one deck resilient coating on this substrate;
Step 3: growth one Bragg mirror on resilient coating forms the speculum of a high reflectance;
Step 4: on Bragg mirror, adopt low temperature growth techniques to make a quantum well;
Step 5: at the outer surface of quantum well, preparation has two ribbon Ti-Au electrodes, finishes the making of device.
Wherein the making of Multiple Quantum Well comprises:
On Bragg mirror, make successively and build layer, a layer of compensation, a uptake zone, an on base layer.
The material of wherein said substrate is the n+GaAs substrate.
The material of wherein said uptake zone is In 0.25 Ga 0.75As.
The material of wherein said layer of compensation is Ga 0.5 As 0.5P.
Wherein Multiple Quantum Well is that 5-10 is right.
Wherein the thickness of resilient coating is 200nm-500nm.
Wherein the thickness of every pair of quantum well uptake zone is 8nm-10nm.
Wherein adopting the growth temperature of the uptake zone that low temperature growth techniques makes on Bragg mirror is 500 ℃-550 ℃.
Wherein the thickness of every pair of quantum well compensating basin is 10nm-12nm.
Two ribbon Ti-Au electrodes 18 wherein, the width of electrode is 10-20 μ m, two electrodes are at a distance of 50-100 μ m.
Description of drawings
For further specifying technology contents of the present invention, below in conjunction with embodiment and accompanying drawing describes in detail as after, wherein:
Fig. 1 is a material growth structure schematic diagram of the present invention.
Fig. 2 is the schematic diagram that specifically practices of the present invention.
Embodiment
See also shown in Figure 1ly, an a kind of micron wave length THz radiation transmission chip of the present invention comprises:
-substrate 11, the material of this substrate are the n+GaAs substrate.Select for use the n+GaAs substrate to be because on the n+GaAs substrate technology comparative maturity of growing semiconductor laser material.
One resilient coating 12, this resilient coating 12 is produced on the substrate 11, and the thickness of this resilient coating 12 is 200nm-500nm.On the n+GaAs substrate before the growing film material, the resilient coating of the suitable thickness of growing in advance, the quality of film can be improved.
One Bragg mirror 13, this Bragg mirror 13 is produced on the resilient coating 12, forms the speculum of a high reflectance.Adopt the semi-conducting material alternating growth of two kinds of different materials, can form the reflective film with certain reflection bandwidth and reflectivity, it and substrate are combined as a whole, and surface quality is good, in the above the continued growth thin-film material.
One Multiple Quantum Well 20, adopt low temperature growth techniques to grow, this quantum well 20 is produced on the Bragg mirror 13, this Multiple Quantum Well 20 comprises many to single quantum well, every pair of single quantum well comprises: build layer 14, layer of compensation 15, uptake zone 16 and on base layer 17 down, this Multiple Quantum Well 20 plays light absorption and photo-generated carrier relaxation, this quantum well 20 is that 5-10 is right, the thickness of this layer of compensation 15 is 10nm-12nm, the thickness of this uptake zone 16 is 8nm-10nm, the uptake zone growth temperature of this Multiple Quantum Well 20 is 500 ℃-550 ℃, and material is In0.25Ga 0.75As; The material of layer of compensation is Ga0.5As0.5P.This Multiple Quantum Well can be used as on the one hand saturated absorbing body that mode-locking technique uses to produce ultrashort pulse.
Pair of electrodes 18, at the outer surface of 5-10 to quantum well 20, preparation has two ribbon Ti-Au electrodes 18.The width of electrode is 10-20 μ m, and two electrodes are at a distance of 50-100 μ m.During chip operation, add certain voltage between two electrodes, can strengthen the power of THz radiation.
In conjunction with consulting Fig. 1, the present invention is the manufacture method that an a kind of micron wave length femtosecond laser excites the THz radiation transmission chip of using with generation THz radiation, comprises the steps: again
Step 1: growth one deck resilient coating 12 on a substrate 11, the thickness of this resilient coating 12 is 200nm-500nm, the material of this substrate is the n+GaAs substrate;
Step 2: growth one Bragg mirror 13 on resilient coating 12 forms the speculum of a high reflectance;
Step 3: on Bragg mirror 13, adopt low temperature growth techniques to make a quantum well 20, this Multiple Quantum Well 20 comprises many to single quantum well, every pair of single quantum well comprises: build layer 14, layer of compensation 15, uptake zone 16 and on base layer 17 down, this Multiple Quantum Well 20 plays light absorption and photo-generated carrier relaxation, this quantum well 20 is that 5-10 is right, the thickness of layer of compensation 15 is that the thickness of 10nm-12nm uptake zone 16 is 8nm-10nm, the growth temperature of the uptake zone of this quantum well 20 is 500 ℃-550 ℃, and material is In0.25Ga0.75As; The material of layer of compensation is Ga0.5As0.5P.
Step 4: at the outer surface of 5-10 to quantum well 20, preparation has two ribbon Ti-Au electrodes 18.The width of electrode is 10-20 μ m, and two electrodes are at a distance of 50-100 μ m.
Example
See also shown in Figure 1ly, the present invention proposes a kind of manufacture method that is applicable to low-temperature epitaxy InGaAs film that a micron wave length femtosecond laser excites in conjunction with the THz radiation transmission chip of the electric field bias of Bragg mirror.This device adopts n+GaAs substrate 11 to carry out epitaxial growth as backing material.Growth 200nm-500nm resilient coating 12 on n+GaAs substrate 11 at first, the Bragg mirror 13 of growing then, then grow 5-10 to quantum well 20, and every pair of quantum well comprises O.25 Ga 0.75 As 16/GaAs 17 of GaAs 1 4/Ga 0.5As 0.5P 1 5/In.The thickness of GaAs 14 and GaAs 17 is generally at 15nm-25nm, and Ga 0.5As 0.5P 15 is the strain compensation district, and thickness is generally at 10nm-12nm, and In 0.25 Ga 0.75 As 15 is the light absorption district, and thickness is generally at 8nm-10nm.Quantum well 20 is carrier relaxation districts, adopts low-temperature epitaxy, and growth temperature is 500 ℃-550 ℃.At the outer surface of 5-10 to quantum well 20, preparation has two ribbon Ti-Au electrodes 18.The width of electrode is 10-20 μ m, and two electrodes are at a distance of 50-100 μ m.
The micron wave length THz radiation transmission chip that this kind method is made is suitable for a micron wave length femtosecond laser and excites to produce the THz radiation.
See also Fig. 2, the THz radiation generation system of present embodiment adopts the resonant cavity of the X type structure of both-end pumping, comprise 976nm semiconductor pump source 21,22, passing through a collimating system 23,24, pumping focus lamp 25,26, gain medium 27, double-colored spherical mirror 28,29, laser output mirror 30, transmitting chip 31 and prism are to dispersion system 32 and 33.Gain medium is generally mixes the ytterbium laser crystal, and its absorbing wavelength is at 976nm, and emission wavelength is near 1060nm.The transmitting chip double as is semiconductor saturable absorbing mirror and laser mirror, make laser system can locked mode to produce ultrashort pulse, laser is incident on the part between two electrodes of transmitting chip.The THz radiation produces from the substrate direction of transmitting chip.Adopt the transmitting chip and the ultra-short pulse laser device of this structure, the power of THz radiation can increase by one more than the order of magnitude than conventional method.
Claims (22)
1. a micron wave length THz radiation transmission chip is characterized in that, comprising:
One substrate;
One resilient coating, this resilient coating is produced on the substrate;
One Bragg mirror, this Bragg mirror is produced on the resilient coating, forms the speculum of a high reflectance;
Multiple Quantum Well adopts low temperature growth techniques that many quantum well to strain compensation are produced on the Bragg mirror, and this Multiple Quantum Well comprises many single quantum wells to strain compensation, and this Multiple Quantum Well plays light absorption and photo-generated carrier relaxation;
A pair of Ti-Au electrode, this electrode are band electrode, and this Ti-Au electrode is produced on the Multiple Quantum Well, play the electric current biasing after this Ti-Au electrifying electrodes, strengthen the effect of THz radiation.
2. a micron wave length THz radiation transmission chip according to claim 1 is characterized in that wherein Multiple Quantum Well comprises:
Build layer once;
One layer of compensation, this layer of compensation are produced on down to be built on the layer;
One uptake zone, this uptake zone is produced on the layer of compensation;
One on base layer, this on base layer is produced on the on base layer.
3. a micron wave length THz radiation transmission chip according to claim 1 is characterized in that, the material of wherein said substrate is the n+GaAs substrate.
4. a micron wave length THz radiation transmission chip according to claim 1 is characterized in that, the material of wherein said uptake zone is In0.25Ga0.75As.
5. a micron wave length THz radiation transmission chip according to claim 1 is characterized in that, the material of wherein said layer of compensation is Ga0.5As0.5P.
6. a micron wave length THz radiation transmission chip according to claim 1 is characterized in that, wherein Multiple Quantum Well is that 5-10 is right.
7. a micron wave length THz radiation transmission chip according to claim 1 is characterized in that, wherein the thickness of resilient coating is 200nm-500nm.
8. a micron wave length THz radiation transmission chip according to claim 1 is characterized in that, wherein the thickness of every pair of quantum well uptake zone is 8nm-10nm.
9. a micron wave length THz radiation transmission chip according to claim 1 is characterized in that, wherein adopting the growth temperature of the uptake zone that low temperature growth techniques makes on Bragg mirror is 500 ℃-550 ℃.
10. a micron wave length THz radiation transmission chip according to claim 1 is characterized in that, wherein the thickness of every pair of quantum well compensating basin is 10nm-12nm.
11. a micron wave length THz radiation transmission chip according to claim 1 is characterized in that, two ribbon Ti-Au electrodes wherein, and the width of electrode is 10-20 μ m, two electrodes are at a distance of 50-100 μ m.
12. the manufacture method of a micron wave length THz radiation transmission chip is characterized in that, comprises the steps:
Step 1: get a substrate;
Step 2: growth one deck resilient coating on this substrate;
Step 3: growth-Bragg mirror on resilient coating forms the speculum of a high reflectance;
Step 4: on Bragg mirror, adopt low temperature growth techniques to make a quantum well;
Step 5: at the outer surface of quantum well, preparation has two ribbon Ti-Au electrodes, finishes the making of device.
13. the manufacture method of a micron wave length THz radiation transmission chip according to claim 12 is characterized in that, wherein the making of Multiple Quantum Well comprises:
On Bragg mirror, make successively and build layer, a layer of compensation, a uptake zone, an on base layer.
14. the manufacture method of a micron wave length THz radiation transmission chip according to claim 12 is characterized in that, the material of wherein said substrate is the n+GaAs substrate.
15. the manufacture method of a micron wave length THz radiation transmission chip according to claim 12 is characterized in that, the material of wherein said uptake zone is In0.25Ga0.7bAs.
16. the manufacture method of a micron wave length THz radiation transmission chip according to claim 12 is characterized in that, the material of wherein said layer of compensation is Ga0.5As0.5P.
17. the manufacture method of a micron wave length THz radiation transmission chip according to claim 12 is characterized in that, wherein Multiple Quantum Well is that 5-10 is right.
18. the manufacture method of a micron wave length THz radiation transmission chip according to claim 12 is characterized in that, wherein the thickness of resilient coating is 200nm-500nm.
19. the manufacture method of a micron wave length THz radiation transmission chip according to claim 12 is characterized in that, wherein the thickness of every pair of quantum well uptake zone is 8nm-10nm.
20. the manufacture method of a micron wave length THz radiation transmission chip according to claim 12 is characterized in that, wherein adopting the growth temperature of the uptake zone that low temperature growth techniques makes on Bragg mirror is 500 ℃-550 ℃.
21. the manufacture method of a micron wave length THz radiation transmission chip according to claim 12 is characterized in that, wherein the thickness of every pair of quantum well compensating basin is 10nm-12nm.
22. the manufacture method of a micron wave length THz radiation transmission chip according to claim 12 is characterized in that, two ribbon Ti-Au electrodes 18 wherein, and the width of electrode is 10-20 μ m, two electrodes are at a distance of 50-100 μ m.
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| CNA2006101269970A CN101150153A (en) | 2006-09-18 | 2006-09-18 | A micron wave length THz radiation transmission chip and its making method |
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| CNA2006101269970A CN101150153A (en) | 2006-09-18 | 2006-09-18 | A micron wave length THz radiation transmission chip and its making method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010093062A (en) * | 2008-10-08 | 2010-04-22 | Canon Inc | Terahertz wave generating element |
| CN102496835A (en) * | 2011-12-20 | 2012-06-13 | 上海理工大学 | m-i-n diode terahertz radiation source of ultra-pure intrinsic gallium arsenide material and production method thereof |
| CN105589119A (en) * | 2016-02-29 | 2016-05-18 | 中国科学院半导体研究所 | Terahertz photoconductive antenna epitaxial structure provided with DBR layer and production method |
| CN107356332A (en) * | 2017-06-28 | 2017-11-17 | 东南大学 | Terahertz transceiving chip, receiving/transmission method and its imaging detection system |
| CN108110101A (en) * | 2017-12-01 | 2018-06-01 | 天津三安光电有限公司 | A kind of yellowish green light-emitting diode |
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2006
- 2006-09-18 CN CNA2006101269970A patent/CN101150153A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010093062A (en) * | 2008-10-08 | 2010-04-22 | Canon Inc | Terahertz wave generating element |
| CN102496835A (en) * | 2011-12-20 | 2012-06-13 | 上海理工大学 | m-i-n diode terahertz radiation source of ultra-pure intrinsic gallium arsenide material and production method thereof |
| CN102496835B (en) * | 2011-12-20 | 2014-05-28 | 上海理工大学 | m-i-n diode terahertz radiation source of ultra-pure intrinsic gallium arsenide material and production method thereof |
| CN105589119A (en) * | 2016-02-29 | 2016-05-18 | 中国科学院半导体研究所 | Terahertz photoconductive antenna epitaxial structure provided with DBR layer and production method |
| CN107356332A (en) * | 2017-06-28 | 2017-11-17 | 东南大学 | Terahertz transceiving chip, receiving/transmission method and its imaging detection system |
| CN108110101A (en) * | 2017-12-01 | 2018-06-01 | 天津三安光电有限公司 | A kind of yellowish green light-emitting diode |
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