CN101150089A - Integration method for single-wall carbon nano tube part - Google Patents
Integration method for single-wall carbon nano tube part Download PDFInfo
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- CN101150089A CN101150089A CNA2006101132145A CN200610113214A CN101150089A CN 101150089 A CN101150089 A CN 101150089A CN A2006101132145 A CNA2006101132145 A CN A2006101132145A CN 200610113214 A CN200610113214 A CN 200610113214A CN 101150089 A CN101150089 A CN 101150089A
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Abstract
This invention provides a method for integrating single-wall carbon nm tube devices including: 1, arranging super-long single-wall carbon nm tube arrays on a heterogeneous base, 2, the heterogeneous base adjusts the energy band structure of the tubes and cuts them along the axial direction to form section units of type-n, type-p and type-metal and p-n junction, 3, connecting the necessary carbon nm tubes with the source/drain and the grid to form an integrated circuit.
Description
Technical field
The invention belongs to the nanometer electronic device technical field, especially a kind of integration method for single-wall carbon nano tube part.
Background technology
Based on the invention of the integrated circuit of silicon device with develop rapidly and brought up the information age of making rapid progress, make the production of human society and life that deep change take place.Along with the continuous increase of integrated level, the size of silicon device is about to enter its physics limit, and the replacer who seeks silicon device becomes scientific circles and the common focus of paying close attention to of industrial circle.At present, carbon nano-tube is hopeful substituted for silicon most because of it has excellent electricity and mechanical performance, and human society is brought into " carbon " epoch.
It is the research focus of recent two decades that carbon nano electronic is learned, and its development is divided into several stages: at first, and the transport property of research single-root carbon nano-tube; Make up electronic device primitive on this basis, as field-effect transistor and diode based on carbon nano-tube; Then with the interconnected logical circuit that becomes of the carbon nano tube device primitive that obtains with certain function; Realize the integrated of circuit at last.The development in preceding two stages has obtained very big progress, and the research in latter two stage launches.The practicability of carbon nano tube device faces the problem of lot of challenges, as the integrated approach of the controllability (caliber, metallicity, semiconductive and chiral angle) of device processing method, carbon nano tube structure, character, the design of fault-tolerance device architecture and a large amount of unit components etc.Set up the efficient controlled method of a cover and can be with carbon nano-tube, obtain in a large number required various device cells and with the device cell height integrated be the key of carbon nano tube device practicability.
Summary of the invention
The purpose of this invention is to provide a kind of single-wall carbon nano tube part integrated technology, the overlength Single Walled Carbon Nanotube is obtained the device cell of different performance along the regulation and control of being with that tube axial direction carries out segmentation, device cell is carried out the interconnected highly integrated circuit that becomes.
Above-mentioned purpose of the present invention is achieved by the following technical solutions:
A kind of integration method for single-wall carbon nano tube part, its step comprises:
(1) the overlength single-wall carbon nanotube array is arranged in the heterogeneous substrate, regulates and control the band structure of each Single Walled Carbon Nanotube by heterogeneous substrate;
(2) along tube axial direction carbon nano-tube is cut, formation n type nanotube segments, p type are received
Device cells such as mitron section, metal mold nanotube segments and p-n junction;
(3) according to circuit design, after required carbon nano-tube Duan Yuyuan, drain electrode and grid linked to each other, the interconnected integrated circuit that becomes.
In the step 1, at SiO
2Make up the micro-nano structure of a plurality of projectioies and/or depression on/the Si substrate, form heterogeneous substrate, end at substrate adopts the micro-contact-printing deposited catalyst, utilize chemical gaseous phase depositing process growth overlength single-wall carbon nanotube array, the overlength single-wall carbon nanotube array rides on the micro-nano structure of heterogeneous substrate.
In the step 1, apply an air-flow in the carbon nano tube growth process, the direction of air-flow is vertical with micro-nano structure.Be floating aloft after carbon nano-tube grows from catalyst, the effect of air-flow makes its direction of growth vertical with micro-nano structure, and carbon nano-tube dropped in the heterogeneous substrate and also vertically rides on the micro-nano structure after air-flow stopped.The single-wall carbon nanotube array length of utilizing the growth of air-flow orientation to obtain can reach Centimeter Level.
At SiO
2One or more of evaporation metal, semiconductor or insulator on/the Si substrate, or, form protruding micro-nano structure by micro-contact printing deposition techniques molecular layer.
At SiO
2The groove that adopts electron beam lithography, reactive ion etching to obtain on/Si the substrate forms the micro-nano structure that caves in.
At SiO
2Can fill metal, semiconductor or insulating material in the groove that etching obtains on/the Si substrate.
Through after the step 2, the Single Walled Carbon Nanotube band structure is regulated and control by heterogeneous substrate along tube axial direction.Different base materials is different with the interaction of carbon nano-tube, also can be different to the modulating action that carbon nano-tube can be with.Thereby form device cells such as n type nanotube segments, p type nanotube segments, metal mold nanotube segments and p-n junction in the substrate surface zones of different, these device cells can constitute the integrated logic gates that realizes various logic functions.For example, can constitute the complementary MOS phase inverter by n-FET and p-FET, this is the most basic unit of standard CMOS circuitry.Simple CMOS logical circuit such as non-conjunction (NAND), " NOR gate " can be obtained (NOR) from this elementary cell, complicated logic circuits such as disjunction gate (OR) and " with door " can also be obtained (AND).With these several basic logical circuits serves as that the basis just can further make up digital integrated circuit.
Advantage of the present invention:
The present invention utilizes heterogeneous substrate that single overlength Single Walled Carbon Nanotube is carried out being with regulation and control along tube axial direction, controlled obtains required device cell.In conjunction with the shearing of carbon nano-tube with interconnectedly can realize that the height of carbon nano tube device is integrated.Utilize the integrated level of the carbon nano tube logic circuit of this process preparation to depend on the density of parallel carbon pipe and axially can be with the spatial resolution of regulation and control.Can be with regulation and control length 100nm to calculate by tube pitch 1 μ m, carbon pipe, integrated level is up to 10
9/ cm
2This invention provides a feasible approach for carbon nano-tube in nanometer electronic device field practicability.
Description of drawings
Fig. 1 is the schematic diagram of integration method for single-wall carbon nano tube part flow process of the present invention; Wherein, Fig. 1 (a) signal is the heterogeneous substrate for preparing by the micro-nano process technology; Fig. 1 (b) signal be the single-wall carbon nanotube array of the superlong directional that deposited catalyst and growth obtain in the heterogeneous substrate shown in Fig. 1 (a); What Fig. 1 (c) illustrated is that Single Walled Carbon Nanotube is cut off along tube axial direction; What Fig. 1 (d) illustrated is with the interconnected integrated circuit that becomes of carbon nano-tube pipeline section.
Among the figure: the 1-silicon dioxide substrates; 2,3,4 micro-nano structures of representing different materials respectively; The 5-catalyst layer; 6-superlong directional single wall carbon nano pipe array; 7-source electrode; The 8-drain electrode; The 9-gate electrode; The 10-lead.
Fig. 2-a is the schematic diagram of the carbon nano-tube complementary MOS phase inverter that obtains by integration method for single-wall carbon nano tube part;
Fig. 2-b is the electrical schematic diagram with the corresponding carbon nano-tube complementary MOS of Fig. 2-a phase inverter; Among the figure: 2-Pt bar, width are 100nm; 3-A1 bar, width are 100nm.
Fig. 3-a for the schematic diagram 3-b of carbon nano-tube CMOS " with the door " logical circuit that obtains by integration method for single-wall carbon nano tube part for the electrical schematic diagram of the corresponding carbon nano-tube CMOS of Fig. 3-a " with door " logical circuit.
Among the figure: 4-Pd bar, width are 50nm; 3-Nb bar, width are 50nm.
Embodiment
(1) with the thick SiO of surface heat oxidation 300nm
2The silicon chip cleaning-drying after, at its surperficial spin coating PMMA, obtain the strip groove structure by electron beam lithography (EBL), reactive ion etching (RIE) etching, the degree of depth of groove is 80nm, width is 100nm.By electron beam deposition (EBD) evaporation 80nm metal platinum (Pt), obtain embedding SiO after peeling off then
2The Pt bar.
(2) substrate surface that obtains in step (1) spin coating PMMA once more obtains the strip groove structure by electron beam lithography (EBL), reactive ion etching (RIE), and the degree of depth of groove is 80nm, and width is 100nm.By electron beam deposition (EBD) evaporation 80nm metallic aluminium (Al), obtain embedding SiO after peeling off then
2The Al bar.The Al bar is parallel with the Pt bar, and spacing is 500nm.
(3) end of the substrate that obtains in step (2) utilizes micro-contact-printing deposition 1 * 10
-2MolL
-1FeCl
3Solution is as catalyst, place the CVD stove, under 950 ℃, with ethanol as carbon source, Ar gas as carrier gas growth overlength single-wall carbon nanotube array, growth time is 20 minutes, applies an air-flow in the growth course, and the direction of air-flow is vertical with the Pt bar, be floating aloft after carbon nano-tube grows from catalyst, the effect of air-flow makes its direction of growth vertical with the Pt bar; The back carbon nano-tube that stops air-flow dropping in the heterogeneous substrate and also vertically rides on Pt bar and the Al bar.The pipeline section that contacts with the Pt bar is the p type, and the pipeline section that contacts with the Al bar is the n type.
(4) carbon nano-tube between Pt bar and the Al bar is cut off.
(5) two sections pipes are linked with grid and connect mutually and form the complementary MOS phase inverter.Fig. 2 a and Fig. 2 b are respectively the schematic diagram and the electrical schematic diagram of the carbon nano-tube complementary MOS phase inverter that obtains.
(1) with the thick SiO of surface heat oxidation 500nm
2The silicon chip cleaning-drying after, at its surperficial spin coating PMMA, obtain the strip groove structure by electron beam lithography (EBL), reactive ion etching (RIE), the degree of depth of groove is 100nm, width is 50nm.By electron beam deposition (EBD) evaporation 100nm Metal Palladium (Pd), obtain embedding SiO after peeling off then
2The Pd bar.
(2) substrate surface that obtains in step (1) spin coating PMMA once more obtains the strip groove structure by electron beam lithography (EBL), reactive ion etching (RIE) etching, and the degree of depth of groove is 100nm, and width is 50nm.By electron beam deposition (EBD) evaporation 100nm metal niobium (Nb), obtain embedding SiO after peeling off then
2The Nb bar.The Nb bar is parallel with the Pd bar, and spacing is 800nm.
(3) end of the substrate that obtains in step (2) utilizes micro-contact-printing deposition 5 * 10
-3MolL
-1FeCl
3Solution is as catalyst, place the CVD stove, under 920 ℃, with ethanol as carbon source, Ar gas as carrier gas growth overlength single-wall carbon nanotube array, growth time is 30 minutes, applies an air-flow in the growth course, and the direction of air-flow is vertical with the Pd bar, be floating aloft after carbon nano-tube grows from catalyst, the effect of air-flow makes its direction of growth vertical with the Pd bar; The back carbon nano-tube that stops air-flow dropping in the heterogeneous substrate and also vertically rides on Pd bar and the Nb bar.The pipeline section that contacts with the Pd bar is the p type, and the pipeline section that contacts with the Nb bar is the n type.
(4) carbon nano-tube between Pd bar and the Nb bar is cut off.
(5) two sections pipes and grid are linked, and connect formation complementary MOS phase inverter mutually.Fig. 3 a and Fig. 3 b are respectively carbon nano-tube CMOS " with door " logical circuit schematic diagram and the electrical schematic diagram that obtains.
In sum, the invention discloses a kind of integration method for single-wall carbon nano tube part.Above-described application scenarios and embodiment are not to be used to limit the present invention, and any those skilled in the art without departing from the spirit and scope of the present invention, can do various changes and retouching, so protection scope of the present invention is looked the claim scope and defined.
Claims (7)
1. integration method for single-wall carbon nano tube part, its step comprises:
(1) the overlength single-wall carbon nanotube array is arranged in the heterogeneous substrate;
(2) band structure of heterogeneous substrate regulation and control Single Walled Carbon Nanotube is cut carbon nano-tube along tube axial direction, forms device cells such as n type nanotube segments, p type nanotube segments, metal mold nanotube segments and p-n junction;
(3) according to circuit design, after required carbon nano-tube Duan Yuyuan, drain electrode and grid linked to each other, the interconnected integrated circuit that becomes.
2. integration method for single-wall carbon nano tube part as claimed in claim 1 is characterized in that: in the step 1, at SiO
2Make up the micro-nano structure of a plurality of projectioies and/or depression on/the Si substrate, form heterogeneous substrate, end at substrate adopts the micro-contact-printing deposited catalyst, utilize chemical gaseous phase depositing process growth overlength single-wall carbon nanotube array, the overlength single-wall carbon nanotube array rides on the micro-nano structure of heterogeneous substrate.
3. integration method for single-wall carbon nano tube part as claimed in claim 2 is characterized in that: apply an air-flow in the carbon nano tube growth process, the direction of air-flow is vertical with micro-nano structure.
4. as claim 2 or 3 described integration method for single-wall carbon nano tube part, it is characterized in that: at SiO
2One or more of evaporation metal, semiconductor or insulator on/the Si substrate form protruding micro-nano structure.
5. as claim 2 or 3 described integration method for single-wall carbon nano tube part, it is characterized in that:, form protruding micro-nano structure by micro-contact printing deposition techniques molecular layer.
6. as claim 2 or 3 described integration method for single-wall carbon nano tube part, it is characterized in that: at SiO
2The groove that adopts electron beam lithography, reactive ion etching to obtain on/Si the substrate forms the micro-nano structure that caves in.
7. integration method for single-wall carbon nano tube part as claimed in claim 6 is characterized in that: at SiO
2Fill metal, semiconductor or insulating material in the groove that etching obtains on/the Si substrate.
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| CNB2006101132145A CN100472755C (en) | 2006-09-19 | 2006-09-19 | Integration method for single-wall carbon nano tube part |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101597053B (en) * | 2009-07-10 | 2011-04-13 | 北京大学 | Method for preparing isotactic single-walled carbon nano-tube array |
| CN103681897A (en) * | 2013-11-18 | 2014-03-26 | 北京大学 | Infrared photoelectric detector and preparation method thereof |
| CN107564917A (en) * | 2016-07-01 | 2018-01-09 | 清华大学 | Nano-heterogeneous structure |
| CN110186872A (en) * | 2019-06-21 | 2019-08-30 | 电子科技大学 | A kind of index sensor and preparation method thereof |
| CN110707042A (en) * | 2019-09-23 | 2020-01-17 | 深圳市华星光电半导体显示技术有限公司 | Manufacturing method of inverter and inverter |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040101200A (en) * | 2002-04-08 | 2004-12-02 | 윌리엄 마쉬 라이스 유니버시티 | Method for cutting single-wall carbon nanotubes through fluorination |
| CN1236496C (en) * | 2002-07-05 | 2006-01-11 | 中国科学院物理研究所 | Logic NOT gate device made of carbon nano tube |
| CN1236492C (en) * | 2002-07-05 | 2006-01-11 | 中国科学院物理研究所 | Carbon nano tube type integrated EFI and preparation process thereof |
| CN1259234C (en) * | 2004-05-27 | 2006-06-14 | 上海交通大学 | Method for flowing catalyst continuous synthetic single-wall carbon nanometer tube with alcohol as carbon source |
-
2006
- 2006-09-19 CN CNB2006101132145A patent/CN100472755C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101597053B (en) * | 2009-07-10 | 2011-04-13 | 北京大学 | Method for preparing isotactic single-walled carbon nano-tube array |
| CN103681897A (en) * | 2013-11-18 | 2014-03-26 | 北京大学 | Infrared photoelectric detector and preparation method thereof |
| CN103681897B (en) * | 2013-11-18 | 2016-04-27 | 北京大学 | A kind of infrared photoelectric detector and preparation method thereof |
| CN107564917A (en) * | 2016-07-01 | 2018-01-09 | 清华大学 | Nano-heterogeneous structure |
| CN107564917B (en) * | 2016-07-01 | 2020-06-09 | 清华大学 | Nano-heterostructure |
| CN110186872A (en) * | 2019-06-21 | 2019-08-30 | 电子科技大学 | A kind of index sensor and preparation method thereof |
| CN110186872B (en) * | 2019-06-21 | 2022-01-28 | 电子科技大学 | Refractive index sensor and preparation method thereof |
| CN110707042A (en) * | 2019-09-23 | 2020-01-17 | 深圳市华星光电半导体显示技术有限公司 | Manufacturing method of inverter and inverter |
| WO2021056785A1 (en) * | 2019-09-23 | 2021-04-01 | 深圳市华星光电半导体显示技术有限公司 | Inverter manufacturing method and inverter |
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| CN100472755C (en) | 2009-03-25 |
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