CN101145434A - Sheet type ferrite inductor terminal electrode and its preparation method - Google Patents
Sheet type ferrite inductor terminal electrode and its preparation method Download PDFInfo
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- CN101145434A CN101145434A CNA2007101199436A CN200710119943A CN101145434A CN 101145434 A CN101145434 A CN 101145434A CN A2007101199436 A CNA2007101199436 A CN A2007101199436A CN 200710119943 A CN200710119943 A CN 200710119943A CN 101145434 A CN101145434 A CN 101145434A
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Abstract
A terminal electrode for chip ferrite inductors and a preparation method thereof are provided, which belongs to the technical field of chip ceramic electronic components. The terminal electrode for chip ferrite inductors has a two-layered structure and is prepared by firstly forming an autologous electrode on the terminal surface of a chip ferrite inductor to increase the surface electronic conductivity of the terminal ferrite of the chip ferrite inductor, to reduce the resistivity less than 10<4> Ohm*m and to allow the ferrite on the terminal surface semi-conductive even metallized; then electroplating Ni on the autologous electrode as a conductive seed layer to form a metal Ni layer; and finally electroplating Sn or Sn-Pb alloy on the Ni layer to obtain a Ni/Sn or Sn-Pb two-layered electrode. The invention has the advantages of no use of precious metal paste in the prior preparation process of terminal electrode in chip ferrite inductor, reduced production cost, reduced consumption of precious metals, and simplified production process.
Description
Technical field
The invention belongs to chip ceramic electronic component technical field, particularly termination electrode of a kind of sheet type ferrite inductor and preparation method thereof.
Background technology
The triple electrode technology is generally adopted in the termination electrode preparation of chip ceramic electronic component now, promptly at first employing is coated with terminal and dips in the noble metal slurry at chip ceramic components base substrate two ends, as silver slurry etc., make hearth electrode through high temperature sintering then, re-plating one deck nickel dam is as the barrier layer, but electroplate one deck tin or tin-lead alloy layer at last as layer, promptly form the triple electrode structure [D.A.Benm of silver/nickel/tin or tin-lead, C.J.Feltz, R.Haynes, andS.C.Pinault, Statistical Determination of Plating Process Variables for Multilayer CeramicChip Capacitors, Journal of the American Ceramic Society 72 (12), 2279-2281 (1989)].Termination electrode preparation needs to adopt high temperature sintering and electroplates two kinds of different technology, invests and uses two to overlap different equipment, and operation is loaded down with trivial details, complex process.Along with international nonferrous metal price continues to rise, precious metal material cost proportion in total cost of production continues to raise, and environment and metals resources are caused very big pressure.And, be coated with the end operation and need adopt the more high-precision terminal that is coated with along with the chip components and parts size reduces.
Summary of the invention
The purpose of this invention is to provide a kind of novel sheet type ferrite inductor termination electrode and preparation method thereof, the ferro element molar content is 10～40% in the Ferrite Material.The present invention removes the use of termination noble metal electrode from, removes the use that is coated with terminal from, adopts a plating line to finish the preparation process of termination electrode.
The termination electrode of sheet type ferrite inductor provided by the invention has two-layer structure, at first chip inductor cross cut end (of a beam) shape from the body electrode, i.e. effect by atomic hydrogen, (resistivity is less than 10 to improve the electronic conductance on ferrite surface, chip inductor termination
4Ω m), make the cross cut end (of a beam) ferrite semiconducting even metallization occur, then with this from the body electrode as the electronickelling of conduction seed layer, form layer of metal nickel dam (2～20 μ m), on nickel dam, electroplate one deck tin or tin-lead alloy layer (2～20 μ m) again, promptly form nickel/tin or tin-two layers of electrode structure of lead.
The concrete preparation method of termination electrode of the present invention is as follows:
At first, sheet type ferrite inductor and dispersed conducting medium such as steel ball are mixed, together place electrolyte aqueous solution (electrolyte concentration 5 grams per liters～500 grams per liters) then, as aqueous sodium persulfate solution etc., in water, add the conductivity that electrolytical purpose is to improve the aqueous solution, be negative electrode then with the conducting medium, electrolytic aqueous solution carries out atomic hydrogen to inductor to be handled, in the electrolytic aqueous solution process, conducting medium and chip inductor vibrated or stir and have better electricity and lead the increase effect, 0.1～5 ampere/square decimeter of cathode-current density, 0～80 ℃ of electrolyte aqueous solution temperature, atomic hydrogen produces on the appearing of electrode in chip inductor, hydrogen migration is to the ferrite surface of appearing near interior electrode, electricity by atomic hydrogen is led modifying function, make inductor termination ferrite surface electronic electricity lead and increase considerably that semiconducting even metallization occur, resistivity is less than 10
4Ω .m.Prolong with the atomic hydrogen processing time, this electricity lead modification area with interior electrode appear be the center along the growth of ceramic surface limit, electricity is led the modification area area and is increased, and forms from the body electrode.Then chip inductor and conducting medium are taken out, clean up with deionized water, adopt the vibration plating method at chip inductor termination electroless nickel layer, because should be big, make in the electronickelling process metallic nickel can be directly on the body electrode, obtain electronics and under depositing at this from body electrode electronic conductance.Then chip inductor and conducting medium are taken out, clean up, adopt vibration plating or barrel plating method electrotinning or tin-lead alloy layer on nickel dam, make termination electrode with complete structure with deionized water.
The invention has the advantages that: remove the use of noble metal slurry in the preparation of sheet type ferrite inductor termination electrode from, reduce production costs, save the noble metal resource; Remove being coated with the end operation from, remove the high temperature sintering operation of noble metal slurry from, exempt the high temperature sintering exhaust emissions; Remove the equipment investment that is coated with terminal and high temperature furnace from, simplify production process; Because the sheet type ferrite inductor termination adopts the electrochemistry atomic hydrogen to handle from the body electrode preparation, can adopt electroplating device to carry out, therefore adopt the preparation that to finish the chip components and parts termination electrode once the cover plating line.Owing to clear and definite corresponding relation is arranged from the size and the electrochemical treatments time of body electrode, growth progress from the body electrode can be precisely controlled by the time, therefore the present invention also is applicable to the termination electrode preparation of small size chip components and parts, removes the use that high accuracy is coated with terminal from.
The present invention is applicable to the termination electrode preparation of chip ferrite components and parts.
Description of drawings
Fig. 1 is the structural representation of the present chip components and parts termination electrode that generally adopts.Wherein, the noble metal electrode 2 on chip component 1, the termination, nickel dam 3, tin or tin-lead layer 4.
Fig. 2 is the structural representation of termination electrode of the present invention.Wherein, on the termination from body electrode 5.
Embodiment
Choose 100 pieces of nickel-copper-zinc ferrite chip multilayer inductor (MLCI) base substrates that sinter, be of a size of 0402 (0.04 inch * 0.02 inch), ferrite consists of Ni
0.3Zn
0.5Cu
0.2Fe
2O
4, the ferro element molar content is 28.6%.Chip inductor is placed hanging basket with the steel ball of diameter 0.5mm, hanging basket is immersed in the aqueous sodium persulfate solution, is anode with the titanium basket, electrolytic aqueous solution under vibration condition, chip inductor is carried out electrochemistry atomic hydrogen electricity leads modification and handle, the preparation chip inductor from the body electrode.Technological parameter is as follows:
Sodium sulphate (Na
2SO
4) aqueous solution 50 grams per liters
2 amperes/square decimeter of cathode-current densities
The temperature room temperature
Locate after 0.5 hour, hanging basket is taken out, clean up hanging basket, chip inductor and steel ball with deionized water, hanging basket is placed the electronickelling plating bath again, adopt the method nickel plating of vibration plating, the electronickelling technological parameter is as follows:
Nickel sulfamic acid 400 grams per liters
Nickel chloride 20 grams per liters
Boric acid 40 grams per liters
50 ℃ of temperature
2 amperes/square decimeter of cathode-current densities
Next, hanging basket is taken out, with deionized water Cleaning container, chip inductor and steel ball, hanging basket is placed the electrotinning plating bath again, adopt the method for vibration plating zinc-plated, the electrotinning technological parameter is as follows:
Stannous chloride 60 grams per liters
Citric acid 30 grams per liters
Ammonium acid fluoride 50 grams per liters
Polyethylene glycol 20 grams per liters
pH 6
The temperature room temperature
1 ampere/square decimeter of cathode-current density
At last, chip inductor is taken out from hanging basket, after cleaning up with deionized water, carry out 150 ℃ baking in 2 hours, gained termination electrode adhesion, good weldability.
Choose 100 pieces of plane hexagonal Co2Z ferrite chip inductance base substrates that sinter, be of a size of 0603 (0.06 inch * 0.03 inch), ferrite consists of Ba
3Co
2Fe
24O
41, the ferro element molar content is 34.3%.Chip inductor is placed hanging basket with the steel ball of diameter 1mm, hanging basket is immersed in the aqueous sodium persulfate solution, is anode with the titanium basket, electrolytic aqueous solution under vibration condition, chip inductor is carried out electrochemistry atomic hydrogen electricity leads modification and handle, the preparation chip inductor from the body electrode.Technological parameter is as follows:
Sodium sulphate (Na
2SO
4) aqueous solution 200 grams per liters
0.5 ampere/square decimeter of cathode-current density
50 ℃ of temperature
Handle after 0.5 hour, hanging basket is taken out, clean up hanging basket, chip inductor and steel ball with deionized water, hanging basket is placed the electronickelling plating bath again, adopt the method nickel plating of vibration plating, the electronickelling technological parameter is as follows:
Nickelous sulfate (NiSO
47H
2O) 250 grams per liters
Nickel chloride (NiCl
26H
2O) 50 grams per liters
Boric acid 40 grams per liters
Asccharin 1 grams per liter
pH 4.3
50 ℃ of temperature
2 amperes/square decimeter of cathode-current densities
Then hanging basket is taken out, clean up hanging basket, chip inductor and steel ball with deionized water, place the barrel plating tube to electroplate chip inductor and steel ball, adopt the barrel plating method zinc-plated, technological parameter is with embodiment 1.At last, chip inductor is taken out from hanging basket, after cleaning up with deionized water, carry out 150 ℃ baking in 2 hours, gained termination electrode adhesion, good weldability.
Claims (5)
1. the termination electrode of a sheet type ferrite inductor, the ferro element molar content is 10～40% in the Ferrite Material, it is characterized in that, have nickel/tin or tin-two layers of electrode structure of lead, at first form from the body electrode at the chip inductor cross cut end (of a beam), by the effect of atomic hydrogen, make the cross cut end (of a beam) ferrite semiconducting even metallization occur, resistivity is less than 10
4Ω m, then with this from the body electrode as the electronickelling of conduction seed layer, form the layer of metal nickel dam, on nickel dam, electroplate one deck tin or tin-lead alloy layer again, form nickel/tin or tin-two layers of electrode structure of lead.
2. according to the described termination electrode of claim 1, it is characterized in that the thickness of metal nickel dam is 2～20 μ m; The thickness of tin or tin-lead alloy layer is 2～20 μ m;
3. a method for preparing the termination electrode of the described sheet type ferrite inductor of claim 1 is characterized in that, preparation technology is:
(1) sheet type ferrite inductor and dispersed conducting medium steel ball are mixed, together place electrolyte aqueous solution then;
(2) with the conducting medium be negative electrode, electrolytic aqueous solution carries out atomic hydrogen to inductor to be handled, 0.1～5 ampere/square decimeter of cathode-current density, 0～80 ℃ of electrolyte aqueous solution temperature, atomic hydrogen produce on the appearing of electrode in chip inductor, and hydrogen migration is to ferrite surface that close interior electrode is appeared, electricity by atomic hydrogen is led modifying function, make inductor termination ferrite surface electronic electricity lead increase, semiconducting even metallization occur, resistivity is less than 10
4Ω m; Prolong with the atomic hydrogen processing time, this electricity lead modification area with interior electrode appear be the center along the growth of ceramic surface limit, electricity is led the modification area area and is increased, and forms from the body electrode;
(3) chip inductor and conducting medium are taken out, clean up with deionized water, adopt the vibration plating method at chip inductor termination electroless nickel layer, nickel ion is directly obtaining electronics under depositing in the electronickelling process on the body electrode; Then chip inductor and conducting medium are taken out, clean up, adopt vibration plating or barrel plating method electrotinning or tin-lead alloy layer on nickel dam, make termination electrode with complete structure with deionized water.
4. in accordance with the method for claim 3, it is characterized in that described electrolyte aqueous solution is an aqueous sodium persulfate solution, electrolyte concentration 5 grams per liters～500 grams per liters of electrolyte aqueous solution.
5. in accordance with the method for claim 3, it is characterized in that, in the electrolytic aqueous solution process, conducting medium and chip inductor are vibrated or stir to increase electricity and lead modified effect.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710119943A CN100576377C (en) | 2007-08-03 | 2007-08-03 | Termination electrode of a kind of sheet type ferrite inductor and preparation method thereof |
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|---|---|---|---|
| CN200710119943A CN100576377C (en) | 2007-08-03 | 2007-08-03 | Termination electrode of a kind of sheet type ferrite inductor and preparation method thereof |
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|---|---|
| CN101145434A true CN101145434A (en) | 2008-03-19 |
| CN100576377C CN100576377C (en) | 2009-12-30 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101717978A (en) * | 2009-12-16 | 2010-06-02 | 深圳顺络电子股份有限公司 | Preliminary treatment method for electroplating of chip ferrite product |
| CN101914796A (en) * | 2010-08-13 | 2010-12-15 | 北京科技大学 | Method for controlling semiconducting speed and degree of metal oxide material surface |
| CN108447661A (en) * | 2018-05-14 | 2018-08-24 | 中山市科旗金属表面处理设备有限公司 | Inductance magnetic core and manufacturing process thereof |
| CN111223663A (en) * | 2020-01-10 | 2020-06-02 | 福建火炬电子科技股份有限公司 | Metal support ceramic capacitor and preparation method thereof |
| WO2021008635A3 (en) * | 2019-10-09 | 2021-03-04 | 深圳华络电子有限公司 | Inductance device electrode preparation method |
-
2007
- 2007-08-03 CN CN200710119943A patent/CN100576377C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101717978A (en) * | 2009-12-16 | 2010-06-02 | 深圳顺络电子股份有限公司 | Preliminary treatment method for electroplating of chip ferrite product |
| CN101914796A (en) * | 2010-08-13 | 2010-12-15 | 北京科技大学 | Method for controlling semiconducting speed and degree of metal oxide material surface |
| CN108447661A (en) * | 2018-05-14 | 2018-08-24 | 中山市科旗金属表面处理设备有限公司 | Inductance magnetic core and manufacturing process thereof |
| WO2021008635A3 (en) * | 2019-10-09 | 2021-03-04 | 深圳华络电子有限公司 | Inductance device electrode preparation method |
| US11655554B2 (en) | 2019-10-09 | 2023-05-23 | Dongguan Hualuo Electronics Co., Ltd. | Method for preparing electrode of inductive component |
| CN111223663A (en) * | 2020-01-10 | 2020-06-02 | 福建火炬电子科技股份有限公司 | Metal support ceramic capacitor and preparation method thereof |
| CN111223663B (en) * | 2020-01-10 | 2022-03-25 | 福建火炬电子科技股份有限公司 | Metal support ceramic capacitor and preparation method thereof |
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| Publication number | Publication date |
|---|---|
| CN100576377C (en) | 2009-12-30 |
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Granted publication date: 20091230 Termination date: 20130803 |