CN101144982A - Method for correcting photomask figure, system and storage medium for using same - Google Patents
Method for correcting photomask figure, system and storage medium for using same Download PDFInfo
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- 238000003384 imaging method Methods 0.000 claims abstract description 101
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- 238000012937 correction Methods 0.000 claims description 12
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Abstract
The present invention discloses an amendment method for graphics on photomasks. According to a first exposure condition, a second exposure condition and a third exposure condition, first, second and third energy curves can be produced, and first, second and third imaging critical values can be respectively worked out. According to graphics on a photomask, and the upper and the lower limits of allowed error, the first and the second check points corresponding to the second energy curve and the third and the fourth check points corresponding to the third energy curve can be produced; the first, second, third and forth check points can be judged whether the four check points respectively fall down at two sides of the second and third imaging critical values; otherwise, graphics on the photomasks should be amended, and the steps above should be conducted again.
Description
Technical field
The present invention relates to a kind of manufacturing process correction operation, particularly relate to the method for correcting photomask figure in a kind of semiconductor fabrication process.
Background technology
So-called photolithography (Optical Lithography) briefly be exactly to be wished the line pattern that designs, and is complete and accurately copy on the wafer.Semiconductor factory at first needs the graphic making that designs is become photomask (Photo Mask), the principle of applied optics imaging, with graphic projection to wafer.By the light that light source sends, have only part can continue scioptics, and be imaged on wafer surface through the photomask transparent region.
In general, and integrated circuit (Integrated Circuit, integrated level IC) is high more, and operating speed is fast more, average unit cost is also low more, so semiconductor manufacturer racks one's brains invariably and semi-conductive live width will be dwindled, so that fill in more multiple transistor on wafer.Therefore,, make the unlikely distortion of figure on the photomask again, then must improve the resolution of figure in order to obtain littler live width.
Wherein a kind of method of improving resolution is an optics in abutting connection with revising (Optical ProximityCorrection is designated hereinafter simply as OPC), and it is to adjust the photomask aperture to come addition or subtract each other required light beam to increase the degree of accuracy of pattern.With reference to the left figure of figure 9, before revising, obtain the pattern image on the photomask earlier, then carry out optics in abutting connection with revising to obtain more accurate pattern, shown in the middle graph of Fig. 9, wherein dotted line is the scope of master pattern.After having revised, promptly as the right figure of Fig. 9, compare with the left figure of Fig. 9, the only surplus small part segment of revised pattern is shown as low resolution.
The criterion of the OPC of pattern guiding " Model-based " is under benchmark focal length (Base Focus) and exposure (Base Dose) now, correction is produced on the figure on the photomask, makes after exposing identical at the figure and the design configuration of the last imaging of wafer (Wafer).The implementing procedure of following simple declaration pattern guiding.
With reference to Figure 10, according to manufacturing process nargin selected reference conditions of exposure, collect the OPE data under this conditions of exposure then, and set up single optical model (Model) with the OPE data.Then, the energy intensity that utilizes this single optical model reckoning light to pass through photomask and be projected to each point on the wafer.Utilize the figure of recursive fashion correction design required change on photomask, so that the energy intensity value at designed image edge equals imaging critical value (Threshold).In Figure 10, PROTOBAR is the yardstick of simulation object correction in the sequential operation, and for example PROTOBAR (50) is the simulation object and need revises 50nm laterally; And＜model〉(x then is to utilize the model that sets up to calculate (x, optical strength y) y).
Yet in actual manufacture process, focal length and exposure have the phenomenon of a little change, so that imaging and design configuration also produce difference.Under this imaging difference value compliant the scope of focal length and exposure change we be called " manufacturing process nargin (Process Window) " (or be called " the manufacturing process scope of application ").Manufacturing process nargin is big more, for improving the finished product rate positive relevant influence is arranged.But revising under the principle at OPC now, is the modification method of asking best under the base condition, but not necessarily can obtain bigger manufacturing process nargin.And the method for improving mostly is according to after revising principle now and finishing OPC, does thin portion at regional area again to adjust, and need adjustment region and be not easy but seek in this flow process, and thin portion adjusts and also is difficult for finishing, and step is complicated and effect is limited.
Therefore, the invention provides a kind of method of correcting photomask figure, increase the foundation of the condition of different exposures of consideration and focal length, make that resulting correction result can obtain bigger manufacturing process nargin in single flow process as correcting photomask figure.
Summary of the invention
Based on above-mentioned purpose, the embodiment of the invention has disclosed a kind of method of correcting photomask figure.The optical model that utilization is set up according to first conditions of exposure produces first energy trace on the two-dimensional coordinate plane, the optical model that utilization is set up according to second conditions of exposure produces second energy trace on this two-dimensional coordinate plane, and utilizes the optical model of setting up according to the 3rd conditions of exposure to produce the 3rd energy trace on this two-dimensional coordinate plane.Calculate the first imaging critical value according to above-mentioned first conditions of exposure, calculate the second imaging critical value, and calculate the 3rd imaging critical value according to above-mentioned the 3rd conditions of exposure according to above-mentioned second conditions of exposure.According to photomask figure, the allowable error upper limit and allowable error lower limit, produce to first checkpoint that should second energy trace and second checkpoint with to the 3rd checkpoint and the 4th checkpoint that should the 3rd energy trace.Judge whether this first checkpoint and this second checkpoint drop on the both sides of this second imaging critical value respectively, and whether the 3rd checkpoint and the 4th checkpoint drop on the both sides of the 3rd imaging critical value respectively.If not, then revise this photomask figure, repeat above-mentioned determining step then.
The embodiment of the invention has also disclosed a kind of system of correcting photomask figure, comprises setup unit, computing unit, judging unit and amending unit.This setup unit definition allowable error upper limit, allowable error lower limit, first conditions of exposure, second conditions of exposure and the 3rd conditions of exposure.This computing unit utilizes the optical model of setting up according to first conditions of exposure to produce first energy trace on the two-dimensional coordinate plane, the optical model that utilization is set up according to second conditions of exposure produces second energy trace on this two-dimensional coordinate plane, and utilize the optical model of setting up according to the 3rd conditions of exposure on this two-dimensional coordinate plane, to produce the 3rd energy trace, calculate the first imaging critical value according to above-mentioned first conditions of exposure, calculate the second imaging critical value according to above-mentioned second conditions of exposure, and calculate the 3rd imaging critical value according to above-mentioned the 3rd conditions of exposure, and according to photomask figure, the allowable error upper limit and allowable error lower limit produce to first checkpoint that should second energy trace and second checkpoint with to the 3rd checkpoint and the 4th checkpoint that should the 3rd energy trace.Whether this first checkpoint of this judgment unit judges and this second checkpoint drop on the both sides of this second imaging critical value respectively, and whether the 3rd checkpoint and the 4th checkpoint drop on the both sides of the 3rd imaging critical value respectively; And if this first checkpoint, this second checkpoint, the 3rd checkpoint and the 4th checkpoint are not dropped on the both sides of this second imaging critical value and the 3rd imaging critical value, then this this photomask figure of amending unit correction respectively.
Embodiments of the invention have also disclosed a kind of storage medium, in order to store computer program, aforementioned calculation machine program comprises a plurality of program codes, and it is in order to be loaded in the computer system and to make aforementioned calculation machine system carry out a kind of method of correcting photomask figure
Description of drawings
Fig. 1 is presented on the two-dimensional coordinate plane, the synoptic diagram that concerns between energy trace and photomask figure and imaging critical value.
Fig. 2 is presented on the two-dimensional coordinate plane, the synoptic diagram that concerns between intensity is less than the energy trace of imaging critical value and photomask figure.
Fig. 3 is presented on the two-dimensional coordinate plane, the synoptic diagram that concerns between intensity is greater than the energy trace of imaging critical value and photomask figure.
Fig. 4 is presented on the two-dimensional coordinate plane, the synoptic diagram that concerns between the energy trace of setting up according to different exposure and photomask figure and allowable error value.
Fig. 5 is presented on the two-dimensional coordinate plane, the synoptic diagram that concerns between the energy trace of setting up according to different exposure and photomask figure, imaging critical value and allowable error value, and wherein this photomask figure need be revised.
Fig. 6 is presented on the two-dimensional coordinate plane, the synoptic diagram that concerns between the energy trace of setting up according to different exposure and photomask figure, imaging critical value and allowable error value, and wherein this photomask figure has been revised errorless.
Fig. 7 is the flow chart of steps of method that shows the correcting photomask figure of the embodiment of the invention.
Fig. 8 is the configuration diagram of system that shows the correcting photomask figure of the embodiment of the invention.
Fig. 9 carries out optics in abutting connection with revising to obtain the synoptic diagram of accurate pattern in the prior art.
Figure 10 is a synoptic diagram of setting up optical model according to process margin selected reference conditions of exposure.
Figure 11 is an optical model synoptic diagram of setting up focal length extreme value and base condition under process margin.
The simple symbol explanation
100 setup units
200 computing units
300 judging units
400 amending units
CP21, CP22, CP31, CP32 checkpoint
DEP desires the border of the figure of imaging on wafer
The EC1..3 energy trace
The border of EP1, the EP2 figure of imaging on wafer
I
0, I
In, I
OutIntensity
LTE allowable error lower limit
The POM photomask figure
Threshold imaging critical value
The UTE allowable error upper limit
Embodiment
For purpose of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and in conjunction with the accompanying drawings 1 to 11, elaborate.Instructions of the present invention provides different embodiment that the technical characterictic of the different embodiments of the present invention is described.Wherein, the configuration of each element among the embodiment is the usefulness for explanation, is not in order to restriction the present invention.And the part of drawing reference numeral repeats among the embodiment, is for the purpose of simplifying the description, is not the relevance that means between the different embodiment.
The embodiment of the invention has disclosed a kind of method of correcting photomask figure.
The implementing procedure of the method for the correcting photomask figure of the following brief description embodiment of the invention.
With reference to Figure 11, at first, under manufacturing process nargin, set up three optical models of focal length extreme value and base condition.Then, the wafer figure dimensional discrepancy allowable value of determining according to design specifications is with decision impact point position (Target Points).Whether the optical energy of utilizing above-mentioned three optical models to calculate this impact point position respectively reaches the imaging critical value, if all meet then end loop and finish OPC, otherwise then continues next circulation.
Below with the explanation of a plurality of examples at the figure that needs under which kind of situation to revise on the photomask, and how the implementing procedure of correcting photomask figure is described.
As mentioned before, under manufacturing process nargin, set up the optical model of focal length extreme value and base condition.With reference to figure 1, (X-axis is represented the position on the two-dimensional coordinate plane, Y-axis is represented intensity) on, according to photomask figure (Patten on Mask, POM) set picture critical value (Threshold) for, this imaging tables of critical values is shown as the required intensity of picture, can be different different because of conditions of exposure, but do not change with the change of photomask figure (POM).Utilize the optics simulation software and set up optical model, and according to this optical model produce power curve (EC1) on above-mentioned two-dimensional coordinate plane, this energy trace can change because of the change of photomask figure (POM) according to the benchmark conditions of exposure.
On this two-dimensional coordinate plane, Y-axis represent to desire the figure of imaging on wafer the border (DesiredEdge Position, DEP), and itself and this energy trace joining I
0Be illustrated on the wafer energy intensity with the photomask opposite position.Owing to put I
0＜imaging critical value (being intensity＜imaging critical value), causing can't imaging, so must correcting photomask figure (POM).
With reference to figure 2, when photomask figure (POM) changed, energy trace also can change thereupon, the dotted line of the crossing gained of this moment energy trace and imaging critical value, be the imaging on wafer of photomask reality the border (Real Edge Position, REP).Yet, this energy trace and Y-axis joining I
OutImaging critical value (be intensity〉imaging critical value), though can imaging, because of the imaging scope surpasses the border (DEP) (being Y-axis) of desiring the figure of imaging on wafer, so need correcting photomask figure (POM).
With reference to figure 3, similarly, when photomask figure (POM) changed, energy trace also can change thereupon, and this moment, energy trace and imaging critical value intersected the dotted line of gained, were the border (REP) of photomask reality imaging on wafer.Yet, the some I that this energy trace and Y-axis intersect
In＜imaging critical value (being intensity＜imaging critical value), causing can't imaging, so must correcting photomask figure (POM).
As Fig. 1～shown in Figure 3, it is by correcting photomask figure (POM) that tradition OPC revises criterion, make border (DEP) (the being Y-axis) intensity of desiring the figure of imaging on wafer equal the imaging critical value, it is a mode of utilizing linear interpolation, and recurrence is obtained the position of photomask figure (POM).
The method of the correcting photomask figure of the embodiment of the invention is to follow traditional OPC to revise criterion, adds the judgement whether imaging surpasses the allowable error value in recursive procedure, does not then finish the recursive operation flow process if all surpass.
With reference to figure 4, the present invention desires the both sides definition range of allowable error on the border (DEP) (being Y-axis) of the figure of imaging on wafer, be the allowable error upper limit (Upper Toleration Error, UTE) with allowable error lower limit (Lower Toleration Error, LTE), the allowable error upper limit (UTE) is dropped on the border of the figure of imaging on wafer and allowable error lower limit (LTE) can finish OPC correction flow process as long as desire.In addition, the energy trace EC1 that the optical model of setting up according to the benchmark conditions of exposure except script produces on the two-dimensional coordinate plane, the optical model that utilization is set up according to the different focal condition produces two energy traces (EC2 and EC3) in addition on the two-dimensional coordinate plane, and (checkpoint (Check Point, CP) CP21, CP22, CP31 and CP32) shown in promptly figure goes up judges whether the imaging scope surpasses the allowable error value to utilize energy trace EC2 and EC3 and the allowable error upper limit and allowable error lower limit to intersect the intensity level of gained.
With reference to figure 5, utilization is according to benchmark conditions of exposure (wavelength=248nm, numerical aperture (NumericalAperture, NA)=0.735, sigma (the pupil packing ratio that promptly enters the mouth (Pupil Filling Ratio))=0.855/0.72, focal length=0) optical model of Jian Liing produce power curve EC1 on the two-dimensional coordinate plane, utilization changes focal length=0.2 optical model of being set up produce power curve EC2 on the two-dimensional coordinate plane into according to conditions of exposure, and utilization changes focal length=-0.2 optical model of being set up produce power curve EC3 on the two-dimensional coordinate plane into according to conditions of exposure.
(wavelength=248nm under the benchmark conditions of exposure, NA=0.735, sigma=0.855/0.72, focal length=0) imaging critical value=0.25 (shown in dotted line T1) that utilizes the optics simulation software to calculate changes conditions of exposure into imaging critical value=0.252 that focal length=0.2 calculated (as dotted line T
2Shown in), and change conditions of exposure into imaging critical value=0.248 that focal length=-0.2 calculated (as dotted line T
3Shown in).In addition, the allowable error upper limit (UTE) is respectively 10nm with allowable error lower limit (LTE).
Judgment criterion according to the method institute foundation of the correcting photomask figure of the embodiment of the invention, when two checkpoints (CP) that optical curve and the allowable error upper limit (UTE) and allowable error lower limit (LTE) intersect gained must drop on respectively its pairing imaging critical value more than and below, so just meet design specifications.For instance, crossing checkpoint CP21 and the CP22 of the energy trace EC2 and the allowable error upper limit (UTE) and allowable error lower limit (LTE) must drop on dotted line T respectively
2Top and below, and crossing checkpoint CP31 and the CP32 of the energy trace EC3 and the allowable error upper limit (UTE) and allowable error lower limit (LTE) must drop on dotted line T respectively
3Top and below.
In Fig. 5, some I
0Value through the calculating gained is 0.19, is not equal to imaging critical value=0.25, and checkpoint CP31 and CP32 drop on dotted line T simultaneously simultaneously
3The below, make and do not drop between the allowable error upper limit (UTE) and the allowable error lower limit (LTE) on the border (EP1 or EP2) of the figure of imaging on the wafer, do not meet design specifications, revise so must carry out OPC.After the OPC correction, as shown in Figure 6, though some I
0Value through the calculating gained is 0.27, be not equal to imaging critical value=0.25, but checkpoint CP21 and CP22 drops on dotted line T respectively
2Top and below, simultaneously checkpoint CP31 and CP32 drop on dotted line T respectively
3Top and below, make and drop between the allowable error upper limit (UTE) and the allowable error lower limit (LTE) on the border (EP1 or EP2) of the figure of imaging on the wafer, so still meet design specifications, therefore can finish OPC and revise flow process.
Fig. 7 is the flow chart of steps that shows the correcting photomask figure method of the embodiment of the invention.
At first, the definition allowable error upper limit (UTE) and allowable error lower limit (LTE), and utilize the optical model of setting up according to first conditions of exposure on the two-dimensional coordinate plane, to produce first energy trace (EC1), the optical model that utilization is set up according to second conditions of exposure produces second energy trace (EC2) on this two-dimensional coordinate plane, and utilize the optical model of setting up according to the 3rd conditions of exposure to produce the 3rd energy trace (EC3) (step S1) on this two-dimensional coordinate plane, wherein this first energy trace (EC1) is positioned between this second energy trace (EC2) and the 3rd energy trace (EC3).
Calculate the first imaging critical value (shown in dotted line T1) according to above-mentioned first conditions of exposure, calculate the second imaging critical value (as dotted line T according to above-mentioned second conditions of exposure
2Shown in), and calculate the 3rd imaging critical value (as dotted line T according to above-mentioned the 3rd conditions of exposure
3Shown in) (step S2).According to photomask figure (POM), this second energy trace (EC2) and this allowable error upper limit (UTE) intersect with allowable error lower limit (LTE) and produce first checkpoint (CP21) and second checkpoint (CP22), and the 3rd energy trace (EC3) intersects with this allowable error upper limit (UTE) and allowable error lower limit (LTE) and produces the 3rd checkpoint (CP31) and the 4th checkpoint (CP32) (step S3).
Next, judge whether this first checkpoint (CP21) and this second checkpoint (CP22) drop on the both sides of this second imaging critical value respectively, and whether the 3rd checkpoint (CP31) and the 4th checkpoint (CP32) drop on the both sides (step S4) of the 3rd imaging critical value respectively.If then finish above-mentioned correction flow process.If not, correcting photomask figure (POM) (step S5) then, getting back to step S4 then judges and correcting photomask figure (POM) with recurrence, make above-mentioned checkpoint drop on the both sides of this second imaging critical value and the 3rd imaging critical value respectively, thereby make and drop between the allowable error upper limit (UTE) and the allowable error lower limit (LTE) on the border (EP1 or EP2) of the figure of imaging on the wafer.
Note that said method can be loaded into storage medium, make computer system can implement the method for above-mentioned correcting photomask figure.
Fig. 8 is the configuration diagram of system that shows the correcting photomask figure of the embodiment of the invention.
The system of the correcting photomask figure of the embodiment of the invention comprises setup unit 100, computing unit 200, judging unit 300 and amending unit 400.
The setup unit 100 definition allowable error upper limits (UTE), allowable error lower limit (LTE), first conditions of exposure, second conditions of exposure and the 3rd conditions of exposure.The optical model that computing unit 200 is set up according to this first conditions of exposure produces first energy trace (EC1) on the two-dimensional coordinate plane, the optical model that utilization is set up according to this second conditions of exposure produces second energy trace (EC2) on this two-dimensional coordinate plane, and utilize the optical model of setting up according to the 3rd conditions of exposure to produce the 3rd energy trace (EC3) on this two-dimensional coordinate plane, wherein this first energy trace (EC1) is positioned between this second energy trace (EC2) and the 3rd energy trace (EC3).
Computing unit 200 calculates the first imaging critical value (shown in dotted line T1) according to above-mentioned first conditions of exposure, calculates the second imaging critical value (as dotted line T according to above-mentioned second conditions of exposure
2Shown in), and calculate the 3rd imaging critical value (as dotted line T according to above-mentioned the 3rd conditions of exposure
3Shown in).Then, according to photomask figure (POM), this second energy trace (EC2) and this allowable error upper limit (UTE) and allowable error lower limit (LTE) intersect and produce first checkpoint (CP21) and second checkpoint (CP22), and the 3rd energy trace (EC3) and this allowable error upper limit (UTE) and allowable error lower limit (LTE) are crossing and produce the 3rd checkpoint (CP31) and the 4th checkpoint (CP32).
Judging unit 300 judges whether this first checkpoint (CP21) and this second checkpoint (CP22) drop on the both sides of this second imaging critical value respectively, and whether the 3rd checkpoint (CP31) and the 4th checkpoint (CP32) drop on the both sides of the 3rd imaging critical value respectively.If not, amending unit 400 correcting photomask figures (POM) then, judging unit 300 is carried out this decision operation more then, drop on the both sides of this second imaging critical value and the 3rd imaging critical value up to above-mentioned checkpoint respectively, thereby make and drop between the allowable error upper limit (UTE) and the allowable error lower limit (LTE) on the border (EP1 or EP2) of the figure of imaging on the wafer.
The method and system of correcting photomask figure of the present invention increases the foundation of the condition of different exposures of consideration and focal length as correcting photomask figure, makes that resulting correction result can obtain bigger manufacturing process nargin in single flow process.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to qualification the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; can carry out various changes and modification to it, so protection scope of the present invention is with being as the criterion that claim was defined.
Claims (12)
1. the method for a correcting photomask figure comprises the following steps:
The optical model that utilization is set up according to first conditions of exposure produces first energy trace on the two-dimensional coordinate plane, the optical model that utilization is set up according to second conditions of exposure produces second energy trace on this two-dimensional coordinate plane, and utilizes the optical model of setting up according to the 3rd conditions of exposure to produce the 3rd energy trace on this two-dimensional coordinate plane;
Calculate the first imaging critical value according to above-mentioned first conditions of exposure, calculate the second imaging critical value, and calculate the 3rd imaging critical value according to above-mentioned the 3rd conditions of exposure according to above-mentioned second conditions of exposure;
According to photomask figure, the allowable error upper limit and allowable error lower limit, produce to first checkpoint that should second energy trace and second checkpoint with to the 3rd checkpoint and the 4th checkpoint that should the 3rd energy trace;
Judge whether this first checkpoint and this second checkpoint drop on the both sides of this second imaging critical value respectively, and whether the 3rd checkpoint and the 4th checkpoint drop on the both sides of the 3rd imaging critical value respectively; And
If not, then revise this photomask figure, repeat above-mentioned determining step then.
2. the method for correcting photomask figure as claimed in claim 1, wherein also comprise according to this photomask figure, this second energy trace and this allowable error upper limit and allowable error lower limit intersect and produce this first checkpoint and this second checkpoint, and the 3rd energy trace and this allowable error upper limit and allowable error lower limit are crossing and produce the 3rd checkpoint and the 4th checkpoint.
3. the method for correcting photomask figure as claimed in claim 1, it also comprises revises this photomask figure, make this first checkpoint, this second checkpoint, the 3rd checkpoint and the 4th checkpoint drop on the both sides of this second imaging critical value and the 3rd imaging critical value respectively, thereby make and drop between this allowable error upper limit and this allowable error lower limit on the border of the figure of imaging on the wafer.
4. the method for correcting photomask figure as claimed in claim 1, wherein, this first energy trace is between this second energy trace and the 3rd energy trace.
5. the system of a correcting photomask figure comprises:
Setup unit, its definition allowable error upper limit, allowable error lower limit, first conditions of exposure, second conditions of exposure and the 3rd conditions of exposure;
Computing unit, it utilizes the optical model of setting up according to first conditions of exposure to produce first energy trace on the two-dimensional coordinate plane, the optical model that utilization is set up according to second conditions of exposure produces second energy trace on this two-dimensional coordinate plane, and utilize the optical model of setting up according to the 3rd conditions of exposure on this two-dimensional coordinate plane, to produce the 3rd energy trace, calculate the first imaging critical value according to above-mentioned first conditions of exposure, calculate the second imaging critical value according to above-mentioned second conditions of exposure, and calculate the 3rd imaging critical value according to above-mentioned the 3rd conditions of exposure, and according to photomask figure, the allowable error upper limit and allowable error lower limit produce to first checkpoint that should second energy trace and second checkpoint with to the 3rd checkpoint and the 4th checkpoint that should the 3rd energy trace;
Judging unit, it judges whether this first checkpoint and this second checkpoint drop on the both sides of this second imaging critical value respectively, and whether the 3rd checkpoint and the 4th checkpoint drop on the both sides of the 3rd imaging critical value respectively; With
Amending unit if this first checkpoint, this second checkpoint, the 3rd checkpoint and the 4th checkpoint are not dropped on the both sides of this second imaging critical value and the 3rd imaging critical value respectively, is then revised this photomask figure.
6. the system of correcting photomask figure as claimed in claim 5, wherein, behind this this photomask figure of amending unit correction, this judging unit repeats this decision operation.
7. the system of correcting photomask figure as claimed in claim 5, wherein, this computing unit is according to this photomask figure, this second energy trace and this allowable error upper limit and allowable error lower limit intersect and produce this first checkpoint and this second checkpoint, and the 3rd energy trace and this allowable error upper limit and allowable error lower limit are crossing and produce the 3rd checkpoint and the 4th checkpoint.
8. the system of correcting photomask figure as claimed in claim 5, wherein, this this photomask figure of amending unit correction, make this first checkpoint, this second checkpoint, the 3rd checkpoint and the 4th checkpoint drop on the both sides of this second imaging critical value and the 3rd imaging critical value respectively, thereby make and drop between this allowable error upper limit and this allowable error lower limit on the border of the figure of imaging on the wafer.
9. the system of correcting photomask figure as claimed in claim 5, wherein, this first energy trace is between this second energy trace and the 3rd energy trace.
10. storage medium, in order to store computer program, aforementioned calculation machine program comprises a plurality of program codes, it comprises the following steps: in order to be loaded in the computer system and to make aforementioned calculation machine system carry out a kind of method of correcting photomask figure
The optical model that utilization is set up according to first conditions of exposure produces first energy trace on the two-dimensional coordinate plane, the optical model that utilization is set up according to second conditions of exposure produces second energy trace on this two-dimensional coordinate plane, and utilizes the optical model of setting up according to the 3rd conditions of exposure to produce the 3rd energy trace on this two-dimensional coordinate plane;
Calculate the first imaging critical value according to above-mentioned first conditions of exposure, calculate the second imaging critical value, and calculate the 3rd imaging critical value according to above-mentioned the 3rd conditions of exposure according to above-mentioned second conditions of exposure;
According to photomask figure, the allowable error upper limit and allowable error lower limit, produce to first checkpoint that should second energy trace and second checkpoint with to the 3rd checkpoint and the 4th checkpoint that should the 3rd energy trace;
Judge whether this first checkpoint and this second checkpoint drop on the both sides of this second imaging critical value respectively, and whether the 3rd checkpoint and the 4th checkpoint drop on the both sides of the 3rd imaging critical value respectively; And
If not, then revise this photomask figure, repeat above-mentioned determining step then.
11. storage medium as claimed in claim 10, wherein also comprise according to this photomask figure, this second energy trace and this allowable error upper limit and allowable error lower limit intersect and produce this first checkpoint and this second checkpoint, and the 3rd energy trace and this allowable error upper limit and allowable error lower limit are crossing and produce the 3rd checkpoint and the 4th checkpoint.
12. storage medium as claimed in claim 10, it also comprises revises this photomask figure, make this first checkpoint, this second checkpoint, the 3rd checkpoint and the 4th checkpoint drop on the both sides of this second imaging critical value and the 3rd imaging critical value respectively, thereby make and drop between this allowable error upper limit and this allowable error lower limit on the border of the figure of imaging on the wafer.
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| CNA2006101515369A CN101144982A (en) | 2006-09-11 | 2006-09-11 | Method for correcting photomask figure, system and storage medium for using same |
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| CNA2006101515369A CN101144982A (en) | 2006-09-11 | 2006-09-11 | Method for correcting photomask figure, system and storage medium for using same |
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| CNA2006101515369A Pending CN101144982A (en) | 2006-09-11 | 2006-09-11 | Method for correcting photomask figure, system and storage medium for using same |
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| CN (1) | CN101144982A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102455602A (en) * | 2010-10-19 | 2012-05-16 | 佳能株式会社 | Program storage medium and method for determining exposure condition and mask pattern |
| CN107450278A (en) * | 2016-06-01 | 2017-12-08 | 佳能株式会社 | Determine method, forming method, the manufacture method of article and storage medium |
-
2006
- 2006-09-11 CN CNA2006101515369A patent/CN101144982A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102455602A (en) * | 2010-10-19 | 2012-05-16 | 佳能株式会社 | Program storage medium and method for determining exposure condition and mask pattern |
| CN102455602B (en) * | 2010-10-19 | 2014-07-23 | 佳能株式会社 | Method for determining exposure condition and mask pattern |
| CN107450278A (en) * | 2016-06-01 | 2017-12-08 | 佳能株式会社 | Determine method, forming method, the manufacture method of article and storage medium |
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