CN101144845B - Electric power semiconductor chip gate cathode junction pressurization test method and device - Google Patents
Electric power semiconductor chip gate cathode junction pressurization test method and device Download PDFInfo
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- CN101144845B CN101144845B CN 200710036058 CN200710036058A CN101144845B CN 101144845 B CN101144845 B CN 101144845B CN 200710036058 CN200710036058 CN 200710036058 CN 200710036058 A CN200710036058 A CN 200710036058A CN 101144845 B CN101144845 B CN 101144845B
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Abstract
The present invention provides a PN junction interrupting property pressurization testing method and the device thereof between the gate cathodes of a chip. The chip can be positioned among medium testing clamps which possess a pressurization type gate cathode interrupting property with an anode molybdenum piece, a cathode molybdenum piece and a spring date pole piece. The anode molybdenum piece and the cathode molybdenum piece can be driven by a clamping mechanism to join to the chip together under a certain pressure. A cathode comb bar on the chip can be electrified through the molybdenum piece by a force exerting mechanism. A gate pole is arranged under the cathode molybdenum piece, and is leaded out through a spring leading pole to be connected to a testing power supply and a meter. The medium test result of the gate cathode interrupting property of the semiconductor chip can be displayed by the testing meter in room temperature.
Description
Technical field
The present invention relates to a kind of detection method and device of chip manufacture quality of power semiconductor device, refer in particular to a kind of door stressed method of testing of cloudy PN junction and device of semiconductor device chip of controllable silicon class.Technology of the present invention is mainly used in the process of semi-conductor chip, is used under the condition that applies certain test pressure the detection to the PN junction blocking characteristics in the semi-conductor chip door nether world.Belong to the electric semiconductor detection technique, and many slivers device control utmost point Characteristics Detection technology.
Background technology
Generally after semi-conductor chip processes, in order to guarantee the quality of chip, need test applying under the condition of certain pressure the cloudy PN junction blocking characteristics of door chip.In regular test, the intermediate detection of the door cathodal block characteristic during for the semi-conductor chip room temperature is to adopt the scheme of press reinforcing.This testing scheme temperature and pressure precision are controlled, but this equipment volume is big, price is high, it is very uneconomical to be used for this middle filler test, thereby the past is detected in the on-the-spot common method of instantaneous pressurization by hand of manufacturing.Though this manual inspection method is quick, the efficient height, but randomness is too big, and dynamics and force mechanism are all uncertain, feel to the testing staff requires high, especially the device door negative electrode for GCT or this many slivers structure of GTO detects, and needs exactly defective sliver to be detected and be unlikely to damage chip, and the dynamics when detecting by manual grasp is just more difficult.So necessary improvement.After retrieval, still do not retrieve similar or close document to domestic patent documentation.
Summary of the invention
A pressure control that nether world PN junction blocking characteristics exists that detects semi-conductor chip when the objective of the invention is at current room temperature is improper, propose a kind of semiconductor device chip that can effectively guarantee and detect quality, neither can produce damage, the intermediate detection method and the device of PN junction blocking characteristics between the door negative electrode in the time of finishing room temperature quickly and easily again to chip.
The objective of the invention is to be achieved through the following technical solutions: the intermediate detection method of the door nether world PN junction blocking characteristics during a kind of semi-conductor chip room temperature, chip is placed a kind of band anode molybdenum sheet, between the intermediate detection anchor clamps of negative electrode molybdenum sheet and elasticity gate pole spare, drive anode molybdenum sheet or negative electrode molybdenum sheet by a clamping device, make anode molybdenum sheet and negative electrode molybdenum sheet under certain pressure mutually and chip fit together, make cathode electrode and molybdenum sheet electric connection on the chip by a force application mechanism again, in negative electrode molybdenum sheet side elasticity gate pole spare is housed also, and draw by the elastic force guide pillar, be connected to measuring instrument, the intermediate detection result of the door nether world PN junction blocking characteristics when showing the semi-conductor chip room temperature by measuring instrument.
The intermediate detection of the door nether world PN junction blocking characteristics during according to semi-conductor chip room temperature of the present invention, the intermediate detection device of the door cathodal block characteristic during the semi-conductor chip room temperature that is proposed are that a kind of adding pressure type with anode molybdenum sheet, negative electrode molybdenum sheet and elasticity gate pole spare detects anchor clamps.This intermediate detection anchor clamps comprise that is at least passed through a movably anode molybdenum sheet, negative electrode molybdenum sheet is with the fixing clamping device of tube core, a force application mechanism that acts on tube core by the anode molybdenum sheet or the negative electrode molybdenum sheet application of force, also comprise an elasticity gate pole spare, and the extension line of gate pole and negative electrode, the extension line of gate pole and negative electrode is connected testing power supply and display instrument.Described tube core clamping device can be to move up and down or around the clamping device of a certain fulcrum rotation formula; Described pressure mechanism can be mechanical force application mechanism, also can be electronic or the force application mechanism that surges.
Principle of work of the present invention is: tube core is placed between anode molybdenum sheet and the negative electrode molybdenum sheet, by the tube core clamping device tube core is clipped between anode molybdenum sheet and the negative electrode molybdenum sheet, apply uniformly suitably pressure for the tube core clamping device by a force application mechanism again, make each sliver of chip can be fully and the molybdenum sheet electric connection; Extension line by elasticity gate pole spare and negative electrode outputs to detecting instrument with signal again, reflects the detection data by instrument, thus judge chip under certain pressure the blocking characteristics of door nether world PN junction.
The intermediate detection method of the door nether world PN junction blocking characteristics during according to semi-conductor chip room temperature of the present invention, the security of device is guaranteed in the intermediate detection screening of PN junction blocking characteristics between the door negative electrode in the time of can carrying out the semi-conductor chip room temperature effectively.And can not produce damage to chip, convenient and swift again.This mode is compared with conventional art, and characteristics are as follows:
1, can realize the cloudy PN junction blocking characteristics test of door of many slivers semiconductor devices is screened.
2, the profile of frock is small and exquisite, compact, with the fine coupling of primary test board.
3, the cost of frock is low, makes simple, safe and reliable.
Description of drawings
Fig. 1 is the perspective view of one embodiment of the invention;
Fig. 2 is the structural representation front view of one embodiment of the invention;
Fig. 3 is the structural representation vertical view of one embodiment of the invention;
Fig. 4 is the structural representation left view of one embodiment of the invention;
Fig. 5 is the structural representation of another embodiment of the present invention.
Among the figure: 1, clamp base, 2, the tube core positioning seat, 3, the pressurization lever, 4, pressurization lever dolly, 5, the anode molybdenum sheet, 6, the negative electrode molybdenum sheet, 7, gate pole, 8, the elastic force guide pillar, 9, fulcrum, 10, the middle part of pressurization lever, 11, adjust quarter butt, 12, tube core, 13, vertical movement mechanism, 14, frame plate, 15, guidepost.
Embodiment
The invention will be further described below in conjunction with drawings and Examples.
The intermediate detection method of PN junction blocking characteristics between the door negative electrode when the present invention is a kind of semi-conductor chip room temperature as can be seen by accompanying drawing, chip is placed a kind of band anode molybdenum sheet, between the adding pressure type intermediate detection anchor clamps of negative electrode molybdenum sheet and elasticity gate pole spare, by lever drives anode molybdenum sheet or negative electrode molybdenum sheet, make anode molybdenum sheet and negative electrode molybdenum sheet under certain pressure mutually and chip fit together, negative electrode sliver on the chip is by the molybdenum sheet electric connection, elasticity gate pole spare is housed under the negative electrode molybdenum sheet, and draw by the elastic force guide pillar, be connected to measuring instrument, the intermediate detection result of PN junction blocking characteristics between the door negative electrode when showing the semi-conductor chip room temperature by measuring instrument.
The intermediate detection of PN junction blocking characteristics between the door negative electrode during according to semi-conductor chip room temperature of the present invention, the intermediate detection device of the door cathodal block characteristic during the semi-conductor chip room temperature that is proposed is a kind of adding pressure type intermediate detection anchor clamps with anode molybdenum sheet, negative electrode molybdenum sheet and elasticity gate pole spare.The intermediate detection anchor clamps of PN junction blocking characteristics comprise one at least by transportable anode molybdenum sheet between lever adding pressure type door negative electrode, negative electrode molybdenum sheet is with the mechanism of clamping tube core, with a pressure mechanism that acts on tube core by the anode molybdenum sheet and the negative electrode molybdenum sheet application of force, also comprise an elasticity gate pole spare simultaneously, and the extension line of gate pole, the extension line of gate pole and negative electrode is connected the test display instrument.Described tube core clamping device can be the clamping device that moves up and down or rotate around a certain fulcrum; Described pressure mechanism can be the machinery mechanism that bears on, and also can be electronic or hydraulic power unit.
Embodiment one
Fig. 1 has provided a kind of intermediate detection anchor clamps with PN junction blocking characteristics between the adding pressure type door negative electrode of anode molybdenum sheet, negative electrode molybdenum sheet and elasticity gate pole spare.And the intermediate detection anchor clamps of adding pressure type door cathodal block characteristic are the intermediate detection anchor clamps of lever adding pressure type cathodal block characteristic, comprise clamp base 1, tube core positioning seat 2, pressurization lever 3, pressurization lever dolly 4, anode molybdenum sheet 5, negative electrode molybdenum sheet 6 and gate pole 7.Wherein, tube core positioning seat 2 is placed on the clamp base 1, and tube core positioning seat 2 sizes and chip size match; Gate pole 7 is housed on tube core positioning seat 2, and the power lead of gate pole 7 is drawn by elastic force guide pillar 8; Be provided with negative electrode molybdenum sheet 6 on gate pole 7, detected semi-conductor chip is placed on the negative electrode molybdenum sheet 6, and negative electrode molybdenum sheet 6 is logical with gate pole 7 Electricity Federations; Pressurization lever dolly 4 also is housed on clamp base 1, and an end of pressurization lever dolly 4 is connected with pressurization lever 3, and pressurization lever 3 can be done oscillating motion around the fulcrum 9 on the pressurization lever dolly; Middle part 10 at the pressurization lever is connected with anode molybdenum sheet 5 by adjusting quarter butt 11, and anode molybdenum sheet 5 is swung along with 3 swings of pressurization lever, and when being rocked to the contacted position of tube core, just in time fits with tube core.
Principle of work of the present invention is: tube core 12 is placed between anode molybdenum sheet 5 and the negative electrode molybdenum sheet 6, by the tube core clamping device that constitutes by pressurization lever 3 and pressurization lever dolly 4 tube core is clipped between anode molybdenum sheet and the negative electrode molybdenum sheet, the force application mechanism that constitutes by pressurization lever 3 and pressurization lever dolly 4 applies uniformly suitably pressure for the tube core clamping device again, make each sliver of chip can be fully and the molybdenum sheet Electricity Federation lead to; Extension line by gate pole 7 and negative electrode outputs to detecting instrument with signal again, reflects the detection data by instrument, thus the blocking characteristics of PN junction between the door negative electrode of judgement chip.
Embodiment two
Fig. 5 has provided the intermediate detection anchor clamps of the adding pressure type door cathodal block characteristic of another kind of band anode molybdenum sheet, negative electrode molybdenum sheet and gate pole.And the intermediate detection anchor clamps of adding pressure type door cathodal block characteristic are the intermediate detection anchor clamps that move up and down adding pressure type cathodal block characteristic, and pressing mechanism is hydraulic-driven or directly uses motor-driven; Detect anchor clamps and comprise clamp base 1, tube core positioning seat 2, anode molybdenum sheet 5, negative electrode molybdenum sheet 6 and gate pole.Wherein, tube core positioning seat 2 is placed on the clamp base 1, and tube core positioning seat 2 sizes and chip size match; On tube core positioning seat 2 gate pole is housed, the power lead of gate pole is drawn by elastic force guide pillar 8; Be provided with negative electrode molybdenum sheet 6 on gate pole, detected semi-conductor chip is placed on the negative electrode molybdenum sheet 6; Guidepost 15 also is housed on clamp base 1, be set with frame plate 14 moving up and down on the guidepost 15, the centre of frame plate 14 is connected with anode molybdenum sheet 5 by adjusting quarter butt 11, anode molybdenum sheet 5 is along with frame plate can move up and down, and a frame plate 14 and a cover drive frame plate 14 and move up and down, tube core 12 is clamped between anode molybdenum sheet 5 and the negative electrode molybdenum sheet 6, and the vertical movement mechanism 13 of its application of force linked together, frame plate 14 moves up and down by vertical movement mechanism 13, and is combined to form the clamping device and the force application mechanism of anode molybdenum sheet 5 and negative electrode molybdenum sheet 6 and tube core 12 by frame plate 14 and vertical movement mechanism 13; Vertical movement mechanism 13 can be hydraulic drive mechanism or directly be motor-driven mechanism.
Principle of work of the present invention is: tube core 12 is placed between anode molybdenum sheet 5 and the negative electrode molybdenum sheet 6, driving frame plate 14 by vertical movement mechanism 13 moves down along guidepost 15, fit together to tube core 12 and anode molybdenum sheet 5 and negative electrode molybdenum sheet 6, further the application of force makes the tube core clamping device apply uniformly suitably pressure again, make each sliver of chip can be fully and the molybdenum sheet Electricity Federation lead to; Extension line by gate pole and negative electrode outputs to detecting instrument with signal again, reflects the detection data by instrument, thus the blocking characteristics of PN junction between the door negative electrode of judgement chip.
Claims (9)
1. semiconductor electric chip door nether world PN junction applied voltage test method, it is characterized in that: chip is placed a kind of band anode molybdenum sheet, between the adding pressure type intermediate detection anchor clamps of negative electrode molybdenum sheet and gate pole spare, drive anode molybdenum sheet or negative electrode molybdenum sheet by a clamping device, make anode molybdenum sheet and negative electrode molybdenum sheet under certain pressure mutually and chip fit together, make negative electrode sliver and molybdenum sheet electric connection on the chip by a force application mechanism again, in negative electrode molybdenum sheet side gate pole is housed, and draw by the elastic force guide pillar, be connected to measuring instrument, the intermediate detection result of PN junction blocking characteristics between the door negative electrode when showing the semi-conductor chip room temperature by measuring instrument; And adding pressure type intermediate detection anchor clamps are the intermediate detection anchor clamps of lever adding pressure type cathodal block characteristic.
2. semiconductor electric chip door nether world PN junction applied voltage test device of realizing the described semiconductor electric chip door of claim 1 nether world PN junction applied voltage test method, it is characterized in that: the intermediate detection device of PN junction blocking characteristics is a kind of adding pressure type intermediate detection anchor clamps with anode molybdenum sheet, negative electrode molybdenum sheet and gate pole spare between the door negative electrode during described semi-conductor chip room temperature, and adding pressure type intermediate detection anchor clamps are the intermediate detection anchor clamps of lever adding pressure type cathodal block characteristic; This intermediate detection anchor clamps comprise one at least by transportable anode molybdenum sheet, negative electrode molybdenum sheet is with the mechanism of clamping tube core, a force application mechanism that acts on tube core by the anode molybdenum sheet and the negative electrode molybdenum sheet application of force, also comprise an elasticity gate pole spare simultaneously, and the extension line of gate pole and negative electrode, the extension line of gate pole and negative electrode is connected testing power supply and display instrument.
3. semiconductor electric chip door as claimed in claim 2 nether world PN junction applied voltage test device is characterized in that: described tube core clamping device is the clamping device that moves up and down or rotate around a certain fulcrum.
4. semiconductor electric chip door as claimed in claim 2 nether world PN junction applied voltage test device, it is characterized in that: described force application mechanism is mechanical force application mechanism.
5. semiconductor electric chip door as claimed in claim 2 nether world PN junction applied voltage test device, it is characterized in that: described force application mechanism is electronic or the force application mechanism that surges.
6. semiconductor electric chip door as claimed in claim 2 nether world PN junction applied voltage test device, it is characterized in that: the intermediate detection anchor clamps of PN junction blocking characteristics are lever adding pressure type intermediate detection anchor clamps between described adding pressure type door negative electrode, comprise clamp base, tube core positioning seat, pressurization lever, pressurization lever dolly, anode molybdenum sheet, negative electrode molybdenum sheet and gate pole; Wherein, the tube core positioning seat is placed on the clamp base, and tube core positioning seat size and chip size match; On the tube core positioning seat gate pole is housed, the lead-in wire of gate pole is drawn by the elastic force guide pillar; On gate pole, be provided with the negative electrode molybdenum sheet, detected semi-conductor chip is placed on the negative electrode molybdenum sheet, the pressurization lever dolly also is housed on clamp base, and an end of pressurization lever dolly is connected with the pressurization lever, and the pressurization lever can be done oscillating motion around the fulcrum on the pressurization lever dolly; Middle part at the pressurization lever is connected with the anode molybdenum sheet by adjusting quarter butt, and the anode molybdenum sheet is swung along with the pressurization lever swing, and when being rocked to the contacted position of tube core, just in time fits with tube core.
7. semiconductor electric chip door as claimed in claim 2 nether world PN junction applied voltage test device, it is characterized in that: the intermediate detection anchor clamps of PN junction blocking characteristics are the intermediate detection anchor clamps that move up and down between described adding pressure type door negative electrode, and pressing mechanism is hydraulic-driven or directly uses motor-driven.
8. semiconductor electric chip door as claimed in claim 7 nether world PN junction applied voltage test device, it is characterized in that: described detection anchor clamps comprise clamp base, tube core positioning seat, anode molybdenum sheet, negative electrode molybdenum sheet and gate pole; Wherein, the tube core positioning seat is placed on the clamp base, and tube core positioning seat size and chip size match; On the tube core positioning seat gate pole is housed, the power lead of gate pole is drawn by the elastic force guide pillar; Be provided with the negative electrode molybdenum sheet on gate pole, detected semi-conductor chip is placed on the negative electrode molybdenum sheet; Guidepost also is housed on clamp base, be set with frame plate moving up and down on the guidepost, the centre of frame plate is connected with the anode molybdenum sheet by adjusting quarter butt, the anode molybdenum sheet is along with frame plate can move up and down, and a frame plate and a cover drive frame plate and move up and down, tube core is clamped between anode molybdenum sheet and the negative electrode molybdenum sheet, and the vertical movement mechanism of its application of force linked together, frame plate moves up and down by vertical movement mechanism, and is combined to form the clamping device and the force application mechanism of anode molybdenum sheet and negative electrode molybdenum sheet and tube core by frame plate and vertical movement mechanism.
9. semiconductor electric chip door as claimed in claim 8 nether world PN junction applied voltage test device is characterized in that: described vertical movement mechanism is hydraulic drive mechanism or directly is motor-driven mechanism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710036058 CN101144845B (en) | 2007-11-06 | 2007-11-06 | Electric power semiconductor chip gate cathode junction pressurization test method and device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710036058 CN101144845B (en) | 2007-11-06 | 2007-11-06 | Electric power semiconductor chip gate cathode junction pressurization test method and device |
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| Publication Number | Publication Date |
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| CN101144845A CN101144845A (en) | 2008-03-19 |
| CN101144845B true CN101144845B (en) | 2010-05-19 |
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| CN 200710036058 Active CN101144845B (en) | 2007-11-06 | 2007-11-06 | Electric power semiconductor chip gate cathode junction pressurization test method and device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110208677A (en) * | 2019-05-24 | 2019-09-06 | 华中科技大学 | A kind of device measuring vertical structure power device blocking voltage |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107656099A (en) * | 2017-09-19 | 2018-02-02 | 华北电力大学 | A kind of pressure fixture for crimp type semiconductor chip electrical characteristics test |
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| US4504783A (en) * | 1982-09-30 | 1985-03-12 | Storage Technology Partners | Test fixture for providing electrical access to each I/O pin of a VLSI chip having a large number of I/O pins |
| CN2220638Y (en) * | 1994-12-28 | 1996-02-21 | 中国航空工业总公司第三○四研究所 | Device for dynamically calibrating force sensor |
| US5656942A (en) * | 1995-07-21 | 1997-08-12 | Electroglas, Inc. | Prober and tester with contact interface for integrated circuits-containing wafer held docked in a vertical plane |
| US6677771B2 (en) * | 2001-06-20 | 2004-01-13 | Advantest Corp. | Probe contact system having planarity adjustment mechanism |
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2007
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4504783A (en) * | 1982-09-30 | 1985-03-12 | Storage Technology Partners | Test fixture for providing electrical access to each I/O pin of a VLSI chip having a large number of I/O pins |
| CN2220638Y (en) * | 1994-12-28 | 1996-02-21 | 中国航空工业总公司第三○四研究所 | Device for dynamically calibrating force sensor |
| US5656942A (en) * | 1995-07-21 | 1997-08-12 | Electroglas, Inc. | Prober and tester with contact interface for integrated circuits-containing wafer held docked in a vertical plane |
| US6677771B2 (en) * | 2001-06-20 | 2004-01-13 | Advantest Corp. | Probe contact system having planarity adjustment mechanism |
Non-Patent Citations (1)
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110208677A (en) * | 2019-05-24 | 2019-09-06 | 华中科技大学 | A kind of device measuring vertical structure power device blocking voltage |
| CN110208677B (en) * | 2019-05-24 | 2020-10-16 | 华中科技大学 | Device for measuring blocking voltage of power device with vertical structure |
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| CN101144845A (en) | 2008-03-19 |
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