CN101140974A - Semi-conductor solid-state light source device - Google Patents

Semi-conductor solid-state light source device Download PDF

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CN101140974A
CN101140974A CNA2007101218742A CN200710121874A CN101140974A CN 101140974 A CN101140974 A CN 101140974A CN A2007101218742 A CNA2007101218742 A CN A2007101218742A CN 200710121874 A CN200710121874 A CN 200710121874A CN 101140974 A CN101140974 A CN 101140974A
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type layer
light source
semi
source device
state light
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CN100470866C (en
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周瓴
武帅
高英
张剑平
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Ma'anshan Jason Semiconductor Co. Ltd.
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ZHOU LING GAO YING
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Abstract

The invention discloses a semiconductor solid lamp-house device, which belongs to the technical field of semiconductor process. The extension part of the semiconductor solid lamp-house device comprises at least one N-shape layer, at least one P-shape layer, at least one irradiant area, an anode and a cathode. The said irradiant area is between the N-shape layer and P-shape layer. The other side of the P-shape layer has at least one P<>++<>-shape layer, on the other side of which has at least one transition layer. The energy gap of the transition layer should no larger than that of the P-shape layer and the P<>++<>-shape layer. On the other side of the said transition layer has at least one N<>++<>-shape layer, the energy gap of which is larger than the said transition layer. The invention provides large power LED semiconductor solid lamp-house device which reduces resistance and improve the thermal conductivity and luminous efficiency.

Description

A kind of semi-conductor solid-state light source device
Technical field
The present invention relates to field of semiconductor technology, particularly a kind of semi-conductor solid-state light source device.
Background technology
Present large-power light-emitting diodes ((LED, Light Emitting Diode)) generally adopt the layer structure that contains PN junction, as shown in Figure 1, this LED is followed successively by from top to bottom: substrate 101, resilient coating 102, N-type layer (lower floor) 103, luminous zone 104 and P-type layer (upper strata) 105.Owing to be subjected to the restriction of epitaxial growth condition, in order to grow high-quality extension, prolong crystal orientation growth usually, and adopt N-type layer 103 following near [0001], P-type layer 105 is in last layout.Under this growth pattern,, require in order to improve luminous efficiency:
(1) go up to form good Ohmic contact at P-type layer (resistive formation), require this ohmic contact that the LED luminous efficiency is not weakened simultaneously or weakening seldom only arranged;
(2) when forward drive, a large amount of heats that produce on the P-type layer are led away.
The compound of forming for the triels of the N (nitrogen) and the periodic table of elements (III-N family) is the nitride semiconductor LED that main extension composition constitutes, its P-type layer is owing to multiple reason is difficult to reach high carrier concentration, and under high P-type layer doping situation, very big resistivity is arranged, show that the Hall mobility in hole often is lower than 20cm 2/ V-s, and the resistivity of material is greater than 0.5 ohmcm (Ω .cm).When contact resistance and the resistivity of material own are big, LED will produce a large amount of heat energy under operating current, destroy accumulating of luminous zone charge carrier, reduce luminous efficiency.The metal mold ohmic contact that forms on high resistivity layer not only will be considered electric property, also must consider the influence of the optical characteristics of this layer metal pair whole LED.
For the resistance that reduces LED, improve its heat conduction and luminous efficiency, people such as T.Gessmann have proposed a kind of scheme, can be with " nest " that the polarity effect that this scheme produces with heterojunction causes produces two-dimensional hole gas, thereby improve hole concentration and (see T.Gessmann, et al., Journal of Applied Physics, Vol.92, Number 7, and pp 3740, (2002)).Owing to produced high carrier concentration at heterojunction boundary, if energy barrier is enough thin, and there is the energy level that can Gong occupy on the energy barrier opposite, and then can improve conductivity by quantum tunneling effect.Simultaneously, heterojunction always can be with semiconductor with narrow in metal electrode one side, therefore easier formation ohmic contact.
The scheme that people such as T.Gessmann propose is used on LED, seeing J.P.Zhang, et al., Appl.Phys.Lett., 85,5532 (2004) and L.Zhou et al., Appl.Phys.Lett., two representational structures have been provided in 241113 (2006) respectively, the former is a bulk structure, and referring to shown in Figure 2, this structure comprises: substrate 201, resilient coating 202, N-type layer 203, luminous zone 204, P-type layer 205, can be with P for a short time +-layer 206, semitransparent metal film 207, and corresponding positive electrode 208 and negative electrode 209.The latter is a membrane structure, and referring to shown in Figure 3, this structure is substrate desquamation, and total is squeezed, and specifically comprises: semiconductor slide glass 301, reflector hold concurrently positive electrode 302, can be with P for a short time +-type layer 303, P-type layer 304, luminous zone 305, N-type layer 306, resilient coating 307 and negative electrode 308.
Wherein, " the P-type layer " in the above-mentioned LED structure can also be subdivided into: anti-dopant diffusion layer, P-type electronic barrier layer and P-type conductive layer etc.
The shortcoming of said structure is as follows:
1, use is little can be with P +-layer though can reduce resistance, may cause the strong absorption of light intensity that the luminous zone is sent.The structure that provides with Fig. 3 is an example, and the narrow of 20 nanometer thickness can be with P +-GaN causes the decay more than 40% of this device short wavelength (less than 300 nanometers) bright dipping at least;
2, the structure that provides of Fig. 2 its P not only +-GaN layer has strong absorption to bright dipping, and semitransparent metal film (as: NiAu) also has strong absorption to light, supposes that NiAu thickness is 100 dusts, and this device light transmittance that makes progress should be lower than 30%; This structure has very thick substrate (＞80 microns) simultaneously, is unfavorable for heat radiation;
3, the structure that provides of Fig. 3, because the last one deck of extension is the P type, so can only use the Rh of high work function, (the Rh reflectivity is lower than 65% to low-reflectivity metal such as Pd, Pd is lower than 45%), promptly use silver, also be only limited to visible light wave range, to infrared, ultraviolet effect very undesirable (being lower than 20%) especially at the following Ag reflectivity of wavelength 300 nanometers; And this structure has very thick low heat conductivity semiconductor slide glass (＞200 microns), is unfavorable for heat radiation.
Summary of the invention
For the resistance that reduces semi-conductor solid-state light source device, improve its heat conduction and luminous efficiency, the invention provides a kind of semi-conductor solid-state light source device.Described technical scheme is as follows:
A kind of semi-conductor solid-state light source device, the epitaxial part of described device comprises: at least one N-type layer, at least one P-type layer, at least one luminous zone, positive electrode and negative electrode, described luminous zone is between described N-type layer and described P-type layer, and described device also comprises:
Opposite side at described P-type layer has at least one P ++-type layer;
And at described P ++The opposite side of-type layer has at least one transition zone, and the bandwidth of described transition zone is not more than described P-type layer and P ++The bandwidth of-type layer;
Opposite side at described transition zone has at least one N ++-type layer, described N ++-type layer can be with energy bandwidth than described transition zone.
The energy bandwidth of described transition zone in described luminous zone can be with half.
The extension composition of described device is the compound that triels in the periodic table of elements and pentels are formed.
The extension composition of described device is a nitride-based semiconductor.
The material of described positive electrode and negative electrode comprises:
Aluminium or vanadium perhaps contain one or both the alloy in aluminium, the vanadium.
On positive electrode that contains aluminium or negative electrode, also comprise a sedimentary deposit, described sedimentary deposit is at least 3 microns a copper, perhaps gold perhaps contains copper, gold a kind of or two kinds the alloy among both, and described device is connected with semiconductor, pottery or metal support by this sedimentary deposit.
Described positive electrode and negative electrode are at the not homonymy or the homonymy of described luminous zone;
When the not homonymy in described luminous zone, epitaxial substrate is stripped from;
When homonymy, between described positive electrode and negative electrode, be provided with insulator in described luminous zone.
The band marrowing of described transition zone is regulated by the ratio of control In, Ga and Al.
Described device is a light-emitting diode.
The beneficial effect of technical scheme provided by the invention is:
The technical scheme that the embodiment of the invention provides has following advantage:
By the narrow resistance that can reduce semi-conductor solid-state light source device in the structure with transition zone, and the minimizing absorption luminous to output optical zone, because the negative electrode of LED also can be used aluminium alloy, positive and negative electrode can be with same metal like this, can primary depositing, an annealing in process has been simplified technology, and then has reduced cost; In reverse installation process, improved heat-conducting effect by thick metal support, reduced the influence of the heat that produces in the P-type layer under the operating current luminous zone efficient.
Description of drawings
Fig. 1 is the structural representation of the LED that provides of prior art;
Fig. 2 is the structural representation of the band heterojunction LED that provides of prior art;
Fig. 3 is the structural representation of another LED of the band heterojunction that provides of prior art;
Fig. 4 is the structural representation of particular tunnel heterojunction provided by the invention;
Fig. 5 is the structural representation of the LED that provides of the embodiment of the invention 1;
Fig. 6 is the structural representation of the LED that provides of the embodiment of the invention 2;
Fig. 7 be the embodiment of the invention containing of providing little can be with the particular tunnel heterojunction of transition zone can be with schematic diagram.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, embodiment of the present invention is described further in detail below in conjunction with accompanying drawing.
The embodiment of the invention is by the P that superposes on the P-of conventional semiconductors solid-state light source device type layer ++-type layer, transition zone, and N ++-type layer forms the particular tunnel heterojunction, reduced semi-conductor solid-state light source device resistance, improved its heat conduction and luminous efficiency.
The embodiment of the invention provides a kind of semi-conductor solid-state light source device, and the epitaxial part of this light source device comprises a particular tunnel heterojunction, and referring to Fig. 4, the structure of particular tunnel heterojunction comprises: P-type layer 401 and be superimposed upon P on the P-type layer 401 ++-type layer 402, transition zone 403 and N ++-type layer 404.
Wherein, the thickness of transition zone 403 is less than 5 nanometers, and it can be with and compare P ++-type layer 402 and N ++-type layer 404 is all narrow.For a short time, can utilize the polarization phenomena of composite semiconductor on the heterojunction boundary that forms on some particular growth direction with transition zone, improve electric field strength, tunnel distance is shortened, thereby improve the conductance of transition zone, make conductance surpass common highly doped reverse PN junction, reach the purpose that reduces resistance.Concerning III-N family semiconductor, p ++-type layer 402 and N ++The doping of-type layer 404 respectively should be 10 19/ cm 3With 5 * 10 18/ cm 3More than.
And transition zone 403 can be any doping, and its band marrowing can be regulated by the ratio of control In, Ga, Al, and wherein, the proportionate relationship of In, Ga, Al is: Inx+Gay+Al (1-x-y)=100%, x and y are variable; It can be continuously that its Interface composition changes, and also can be discontinuous.
The P that comprises in the above-mentioned particular tunnel heterojunction ++-type layer, transition zone and N ++-type layer is not limited to one, as required a plurality of P can be arranged ++-type layer, transition zone or N ++-type layer, the chemical composition of these layers do not need in full accord yet.
The compound of forming with III family element in the periodic table of elements and V group element (comprising nitride-based semiconductor) is an example for main extension composition constitutes LED, comprise among the LED: at least one N-type layer, at least one P-type layer is in N-type layer and at least one luminous zone of P-type layer sandwich; And inside the subsequent growth layer of P-type layer, also having comprised a particular tunnel heterojunction as shown in Figure 4, it comprises at least one P ++-type layer, at least one is than P-type layer and P ++-type layer can be with all narrow transition zone, and at least one N ++-type layer.
Embodiment 1-
Present embodiment is example with LED as semi-conductor solid-state light source device, the particular tunnel heterojunction that utilizes Fig. 4 to provide, the structure of LED can adopt several multi-form, as shown in Figure 5, the structural representation of the LED that provides for present embodiment, this LED adopt the vertical membrane structure that injects, and total is squeezed, and substrate is stripped from, and mainly comprises: N-type ohmic contact 501, N-type layer 502, luminous zone 503, P-type layer 504, P ++-type layer 505, transition zone 506 and N ++-type layer 507 (contact layer), reflector hold concurrently positive electrode 508 and metal heat sink 509;
Wherein, N-type ohmic contact 501 is as the negative electrode of LED, and this electrode contains aluminium, and perhaps vanadium perhaps contains one or both alloys that all contain in these two kinds of elements;
With below N ++The reflector of-type layer semiconductor contact the positive electrode of holding concurrently has reflective efficiently, its material can be the short wavelength the very aluminum or aluminum alloy of high reflectance to be arranged, if aluminum alloy anode, can be again by other metal sandwichs weld, multiple mode such as bonding directly links to each other with metal or ceramic heat sink, forms high-effective conductive, conductive structure.The material of this electrode also can the person's of being vanadium, or the alloy of vanadium and aluminium.
Embodiment 2
Present embodiment is example with LED as semi-conductor solid-state light source device, the particular tunnel heterojunction that utilizes Fig. 4 to provide, the structure of this LED as shown in Figure 6, the total of this LED is squeezed, and substrate can be stripped from as required, become the upside-down mounting film LED, mainly comprise: substrate and resilient coating 601, N-type layer 602, luminous zone 603, P-type layer 604, P ++-type layer 605, transition zone 606 and N ++-type layer 607 (contact layer), reflector hold concurrently positive electrode 608, reflector hold concurrently negative electrode 609, thick metal support 610, heat sink base 611 and insulation dielectric 612; Wherein substrate and resilient coating 601 can be peeled off as required.
Wherein, with below N ++The reflector of-type layer semiconductor contact the positive electrode of holding concurrently can be the short wavelength the very aluminium or the aluminium alloy of high reflectance to be arranged.If aluminum alloy anode can contain copper by one again, perhaps the metal sandwich of gold and alloy thereof welds, and multiple mode such as bonding directly links to each other with metal or ceramic heat sink base, forms high-effective conductive, conductive structure.The material of positive and negative electrode also can the person's of being vanadium, or contains the alloy of vanadium and aluminium.
As required, reflector holds concurrently that positive electrode 608, reflector hold concurrently between the negative electrode 609 can be with the dielectric of insulation separately, in order to avoid cause short circuit, also the dummy section that can be provided with as shown in Figure 6 at thick metal support 610 be used to avoid the short circuit of positive and negative electrode.
Be with the vertical injecting structure difference that embodiment 1 provides: positive and negative electrode is at the homonymy of luminous zone, and needs allow negative electrode link to each other with the N-type layer semiconductor of being close to substrate by corroding.
More than transition zone among two embodiment, it can be with the P than its both sides ++-type layer and N ++-type layer is all narrow, but compare with being with of luminous zone can be smaller, but can not less than the luminous zone can be with 1/2; Also can be the same wide or wideer with being with of luminous zone;
Further, on positive electrode that contains aluminium and negative electrode, directly or indirectly deposited at least 3 microns copper, perhaps gold perhaps contains a kind of or two kinds of alloys that all contain among both, and is connected with semiconductor, pottery or metal support by this sedimentary deposit;
Can draw by above two embodiment, the positive electrode of LED and negative electrode can be the not homonymy in the luminous zone, perhaps homonymy.If homonymy not, epitaxial substrate will be stripped from; If positive and negative electrode at the luminous zone homonymy, when positive and negative electrode has intersection, will have insulator to separate between positive and negative electrode, and epitaxial substrate can be stripped from also and can be kept.
Above embodiment is especially in the III-N semiconductor, with [0001] crystal orientation, and is the application of the extension of last surface coating with III family element.If with the V group element is surface coating, be the crystal orientation growth with [000-1], corresponding transition zone can widely can be with, and not necessarily narrow energy band.If with the growth of nonpolar crystal orientation, as edge＜10-10〉the crystal orientation growth, said method stands good.
Can also inject with ion, method such as diffusion implants P-N-type semiconductor N surface by force with elements such as silicon, makes superficial layer become N ++-type layer also can reach approximate purpose of the present invention.
Above embodiment sets forth as semi-conductor solid-state light source device by LED, and semi-conductor solid-state light source device of the present invention is not limited to LED, and the similar of other light source device no longer describes in detail here.
The technical scheme that the embodiment of the invention provides has following advantage:
1) reduced the resistance of LED:
On principle, can be with on the semiconductor in the N-molded breadth that to form ohmic contact easier than P-type.This is that the N-N-type semiconductor N does not then have these characteristics because metal is directly related with bandwidth to the energy barrier of charge carrier with P-N-type semiconductor N contact interface.For III-N family semiconductor, bandwidth (for example: GaN), even (for example: AlN) reach 5.9 electron-volts can surpass 3.4 electron-volts.Therefore, it is highly beneficial that P-type contact is converted into the contact of N-type, and present embodiment is realized by a tunnel heterojunction that contains the transition interlayer.As shown in Figure 7 contain little can with the particular tunnel heterojunction of transition zone can be with schematic diagram, with P ++The degenerate state that-type layer side carrier concentration is not enough to reach real is an example, because the strong polarization phenomena that the nitride-based semiconductor heterojunction boundary exists can be strengthened the band curvature phenomenon that heterojunction itself just has, thereby cause the part of charge carrier to be accumulated, form 2 dimension electronics and hole accumulation regions.Pass through the tunnel current of triangle energy barrier and two/first power of carrier concentration, and the first power of energy barrier width is directly proportional.Therefore, this design is compared with common reverse PN junction, because carrier concentration is very high, under the reverse voltage effect, when small voltage, tunnel effect will be more obvious; When big reverse voltage, only the narrow heterojunction regions of 5 nanometers also can be shorter than the depletion region of PN junction, be equivalent to reduce the energy barrier width.According to the difference of two layers of material, this transition interlayer can suitably mix, and reaches further increase conductivity, suppresses the effect of veiling glare.
2) reduce the absorption luminous to output optical zone:
Because the transition region thickness that provides of the embodiment of the invention is little, therefore more originally narrowly can be with P ++-type contact layer will lack the absorption of luminous zone bright dipping.With the III-N material is example, and routine is narrow can be with P ++-type contact layer (as p-GaN) thickness is everlasting about 20 nanometers, and the narrow transition zone of being with that uses in the embodiment of the invention is less than 5 nanometers.And, can suitably increase the ratio of Al in semiconducting alloy, allow to be with suitably broaden, further reduce absorption to the luminous zone bright dipping.
3) can use aluminum or aluminum alloy as the LED positive electrode:
Because the epitaxial loayer that will contact with positive electrode is changed to the N type from the P type, the low power characteristic of aluminium and aluminium alloy becomes original Schottky contacts into ohmic contact, improves the reflectivity of reflector in short wavelength range greatly.With the III-N compound semiconductor is example, and aluminium can both keep the reflectivity more than 90% from 200 nanometers to 700 nanometers, and silver just reaches its ionization frequency below 340 nanometers, and reflectivity decays to less than 20%.When not using aluminium in the prior art, Rh is that common P type contacts the reflector of holding concurrently with Pd, and its reflectivity is about 65% and 45% respectively.Therefore, use aluminium to improve the versatility of same chip technology to different-waveband LED as reflector.
4) simplify LED technology: because the negative electrode of LED also can be used aluminium alloy, positive and negative electrode can be with same metal like this, can primary depositing, and an annealing in process has been simplified technology, and then has reduced cost.
5) improve thermal conductivity: thick metal support has improved heat-conducting effect in reverse installation process, has reduced the influence to luminous zone efficient of the heat that produces in the P-type layer under the operating current.
The above only is preferred embodiment of the present invention, and is in order to restriction the present invention, within the spirit and principles in the present invention not all, any modification of being done, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (9)

1. semi-conductor solid-state light source device, the epitaxial part of described device comprises: at least one N-type layer, at least one P-type layer, at least one luminous zone, positive electrode and negative electrode, described luminous zone is characterized in that described device also comprises between described N-type layer and described P-type layer:
Opposite side at described P-type layer has at least one P ++-type layer;
And at described P ++The opposite side of-type layer has at least one transition zone, and the bandwidth of described transition zone is not more than described P-type layer and P ++The bandwidth of-type layer;
Opposite side at described transition zone has at least one N ++-type layer, described N ++-type layer can be with energy bandwidth than described transition zone.
2. semi-conductor solid-state light source device as claimed in claim 1 is characterized in that, the energy bandwidth of described transition zone in described luminous zone can be with half.
3. semi-conductor solid-state light source device as claimed in claim 1 is characterized in that, the extension composition of described device is the compound that triels in the periodic table of elements and pentels are formed.
4. semi-conductor solid-state light source device as claimed in claim 1 is characterized in that, the extension composition of described device is a nitride-based semiconductor.
5. semi-conductor solid-state light source device as claimed in claim 1 is characterized in that, the material of described positive electrode and negative electrode comprises:
Aluminium or vanadium perhaps contain one or both the alloy in aluminium, the vanadium.
6. semi-conductor solid-state light source device as claimed in claim 5, it is characterized in that, on positive electrode that contains aluminium or negative electrode, also comprise a sedimentary deposit, described sedimentary deposit is at least 3 microns a copper, perhaps golden, perhaps contain copper, gold a kind of or two kinds the alloy among both, described device is connected with semiconductor, pottery or metal support by this sedimentary deposit.
7. semi-conductor solid-state light source device as claimed in claim 1 is characterized in that, described positive electrode and negative electrode are at the not homonymy or the homonymy of described luminous zone;
When the not homonymy in described luminous zone, epitaxial substrate is stripped from;
When homonymy, between described positive electrode and negative electrode, be provided with insulator in described luminous zone.
8. semi-conductor solid-state light source device as claimed in claim 1 is characterized in that, the band marrowing of described transition zone is regulated by the ratio of control In, Ga and Al.
9. as arbitrary described semi-conductor solid-state light source device in the claim 1 to 8, it is characterized in that described device is a light-emitting diode.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103855263A (en) * 2014-02-25 2014-06-11 广东省工业技术研究院(广州有色金属研究院) GaN-base LED epitaxial wafer with polarization tunnel junction and preparation method of GaN-base LED epitaxial wafer
CN106848012A (en) * 2017-02-08 2017-06-13 华南师范大学 A kind of LED structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103855263A (en) * 2014-02-25 2014-06-11 广东省工业技术研究院(广州有色金属研究院) GaN-base LED epitaxial wafer with polarization tunnel junction and preparation method of GaN-base LED epitaxial wafer
CN106848012A (en) * 2017-02-08 2017-06-13 华南师范大学 A kind of LED structure

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