CN101140853A - Crystallization method of amorphous silicon layer and photo mask thereof - Google Patents
Crystallization method of amorphous silicon layer and photo mask thereof Download PDFInfo
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- CN101140853A CN101140853A CNA2006101516107A CN200610151610A CN101140853A CN 101140853 A CN101140853 A CN 101140853A CN A2006101516107 A CNA2006101516107 A CN A2006101516107A CN 200610151610 A CN200610151610 A CN 200610151610A CN 101140853 A CN101140853 A CN 101140853A
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Abstract
A crystallization method for amorphous silicon layer is provided, which comprises steps as follows: A. providing a substrate for preformed amorphous silicon layer. B. providing photo mask with its own pattern including the first zone map and the second zone map which are in mirror symmetry with each other. C. Taking the first zone map as the first irradiating covering area and moving the substrate forward to the first direction to make the laser beam irradiate onto the amorphous silicon layer along the first direction through the first zone map. D. Taking the second zone map as the second irradiating covering area and moving the substrate forward to the second direction which is opposite to the first direction to make the laser beam irradiate onto the amorphous silicon layer along the second direction through the second zone map. E. repeat steps C and D to completely convert the amorphous silicon layer on the substrate to the polycrystal silicon layer.
Description
Technical field
The present invention relates to a kind of method for crystallising and photomask thereof, and particularly relate to a kind of method for crystallising of amorphous silicon layer and be used in sequential lateral solidifcation (Sequential Lateral Solidification, SLS) photomask in the laser crystal method.
Background technology
In recent years, for demand in response to high-effect flat-panel screens and panel integrated circuit thereof, polysilicon membrane low temperature crystallization technology is by extensive studies, and wherein, (Excimer LaserCrystallization) is the crystallization technique of present main flow with excimer laser crystallization.
Fig. 1 illustrates the schematic diagram into existing a kind of sequential lateral solidifcation laser crystallization apparatus.Please refer to Fig. 1, (Sequential lateral solidification, SLS) laser crystallization apparatus 100 comprises this sequential lateral solidifcation: lasing light emitter (not illustrating), optical system 110 and baseplate carrier 120.This sequential lateral solidifcation laser crystallization apparatus 100 is the improvement of excimer laser crystallization apparatus, and it is in excimer laser system originally, has installed high-accuracy optical system 110 additional and can carry out time micron baseplate carrier 120 that moves with bearing substrate 130.
Particularly, by the slit layout designs (maskdesign) on the photomask in the optical system 110 112, make laser beam 140 graphical, and shine amorphous silicon layer on the substrate 130 (α that illustrates as Fig. 1-Si) through projection lens 114 via photomask 112.Therefore, can control the zone and the position, grain boundary (grain boundary) of film lateral solidifcation crystallization, to make the polysilicon layer that has crystal grain periodically and arrange (p-Si that illustrates as Fig. 1) by the design of photomask.Hold above-mentionedly, utilize the size and the thin film crystallization quality of the crystal grain of SLS laser crystal method gained will be closely bound up with patterned photomask 112 slit layout designs.
In addition, for problem that solves the film projection that produces in the SLS laser crystal method and the size that increases polysilicon grain, in the SLS laser crystal method, on the employed photomask, can design complicated and asymmetric pattern mostly.In U.S. Pat 6,800, in 540, the asymmetric pattern photomask design that it proposes as Fig. 2 illustrates, a plurality of printing opacity patterns 210,220,230 of design on photomask 200 are in order to the problem of solution film projection.In addition, in U.S. Pat 6,770, in 545, its proposition is provided with the first transparent area L and the second transparent area M as the asymmetric pattern photomask design that Fig. 3 illustrates on photomask 300, wherein, the first transparent area L has four rectangular-shaped patterns that vary in size (rectangular-shaped pattern) L1, L2, L3, L4, and the second transparent area M has two rectangular-shaped pattern M1, M2 that vary in size, and in order to increase the size of polysilicon grain.
Yet, when in the SLS laser crystal method, using the photomask of above-mentioned asymmetric pattern design, only can carry out unidirectional scanning (single direction scan) owing to the restriction of asymmetric pattern, so will be unfavorable for the shortening of process time.For solving the film projection simultaneously and can only carrying out the unidirectional problem that scans, another kind of optical mask pattern design is proposed in the prior art.
Fig. 4 illustrates to existing another kind and is applied to photomask in the SLS laser crystal method.Please refer to Fig. 4, be provided with different optical mask pattern 410,420,430 and 440 on this photomask 400.As shown in Figure 4, optical mask pattern 410,420,430,440 is the design of symmetrical pattern on the whole.Therefore, utilize photomask 400 can carry out two-way scanning.And, can eliminate the film projection by set optical mask pattern 410,420,430,440.
But because photomask 400 has four optical mask patterns 410,420,430,440, and laser beam (not illustrating) is to be radiated at the amorphous silicon layer (not illustrating) that is positioned on the substrate (not illustrating) through whole photomasks 400.Moreover, when moving substrate (not illustrating) carrying out scanning when operation in the SLS laser crystal method, only can move the substrate in 1/4th zones during each moving substrate.So, when carrying out the scanning of SLS laser crystal method in one direction, not only need more laser radiation number of times (extra laser shot), it is many that the total degree of required moving substrate also becomes, thus, be unfavorable for the shortening of process time on the contrary, and can reduce the production capacity of technology.
Summary of the invention
In view of this, the purpose of this invention is to provide a kind of method for crystallising of amorphous silicon layer, to shorten the process time and to improve process efficiency and production capacity.
Another object of the present invention provides a kind of photomask, is applicable to the sequential lateral solidifcation laser crystal method, and it utilizes two-way scanning to carry out laser crystallization technology, so not only can shorten the time of technology, more can improve process efficiency and production capacity.
For reaching above-mentioned or other purpose, the present invention proposes a kind of method for crystallising of amorphous silicon layer, comprises the step of following (A)～(D).At first, in (A) step, provide substrate, formed amorphous silicon layer on this substrate.Then, in (B) step, provide photomask, this photomask has optical mask pattern, and optical mask pattern comprises first area pattern and second area pattern each other in the mirror image symmetry.Come, in (C) step, choosing the first area pattern is first irradiation area again, and toward the first direction moving substrate, so that laser beam is radiated on the amorphous silicon layer on the first direction by the first area pattern.Continue it, in (D) step, choosing the second area pattern is second irradiation area, and toward the second direction moving substrate opposite with first direction, so that laser beam is radiated on the amorphous silicon layer on the second direction by the second area pattern.Afterwards, repeat this (C), (D) step, so that the amorphous silicon layer on the substrate changes polysilicon layer fully into.
In one embodiment of this invention, the area of the first above-mentioned irradiation area is more than or equal to the area of first area pattern.
In one embodiment of this invention, the area of the second above-mentioned irradiation area is more than or equal to the area of second area pattern.
In one embodiment of this invention, the area of the first above-mentioned irradiation area is less than the area of optical mask pattern.
In one embodiment of this invention, the area of the second above-mentioned irradiation area is less than the area of optical mask pattern.
In one embodiment of this invention, above-mentioned with substrate from being converted to toward first direction mobile before the moving of second direction, carry out align substrates and photomask simultaneously and choose the operation that the second area pattern is second irradiation area.
In one embodiment of this invention, above-mentioned with substrate from being converted to toward second direction mobile before the moving of first direction, carry out align substrates and photomask simultaneously and choose the operation that the first area pattern is first irradiation area.
In one embodiment of this invention, above-mentioned optical mask pattern comprises first sub pattern, second sub pattern, and the 3rd sub pattern, and second sub pattern is between first sub pattern and the 3rd sub pattern; Wherein, first sub pattern and second sub pattern constitute the first area pattern, and second sub pattern and the 3rd sub pattern constitute the second area pattern.
For reaching above-mentioned or other purpose, the present invention proposes a kind of photomask, be applicable to a sequential lateral solidifcation laser crystal method, this photomask comprises transparency carrier, this transparency carrier is provided with an optical mask pattern, and optical mask pattern comprises first area pattern and second area pattern each other in the mirror image symmetry, wherein, when making a laser beam irradiation on photomask and when forming an irradiation area, the area of this irradiation area is less than the area of optical mask pattern.
In one embodiment of this invention, the area of above-mentioned irradiation area is more than or equal to the area of first area pattern.
In one embodiment of this invention, the area of above-mentioned irradiation area is more than or equal to the area of second area pattern.
In one embodiment of this invention, above-mentioned optical mask pattern comprises first sub pattern, second sub pattern, and the 3rd sub pattern, and second sub pattern is between first sub pattern and the 3rd sub pattern, wherein, first sub pattern and second sub pattern constitute the first area pattern, and second sub pattern and the 3rd sub pattern constitute the second area pattern.
The present invention is because of the area that the makes optical mask pattern irradiation area area greater than laser beam, and when carrying out laser crystallization technology on first direction, only chooses the subregion (first area pattern) on the photomask; And when on second direction, carrying out laser crystallization technology, on the selective light mask another zone (second area pattern) partly again, therefore, the method for crystallising of amorphous silicon layer of the present invention can carry out two-way scanning, and reduce laser radiation number of times and moving substrate number of times, and then can promote process efficiency and production capacity.
For above and other objects of the present invention, feature and advantage can be become apparent, following conjunction with figs. and preferred embodiment are to illustrate in greater detail the present invention.
Description of drawings
Fig. 1 illustrates the schematic diagram into existing a kind of sequential lateral solidifcation laser crystallization apparatus.
Fig. 2 illustrates and is U.S. Pat 6,800,540 disclosed photomasks with asymmetric pattern.
Fig. 3 illustrates and is U.S. Pat 6,770,545 disclosed photomasks with asymmetric pattern.
Fig. 4 illustrates to existing another kind and is applied to photomask in the SLS laser crystal method.
Fig. 5 illustrates the schematic diagram into a kind of sequential lateral solidifcation laser crystallization apparatus of the embodiment of the invention.
Fig. 6 illustrates the schematic top plan view into the photomask among Fig. 5.
Fig. 7 A～7C illustrates the steps flow chart schematic diagram into the method for crystallising of a kind of amorphous silicon layer of the preferred embodiment of the present invention.
Fig. 8 illustrates the flow chart of steps into the method for crystallising of the amorphous silicon layer of the preferred embodiment of the present invention.
The simple symbol explanation
100,500: the sequential lateral solidifcation laser crystallization apparatus
110,510: optical system
112,200,300,400,512: photomask
114,514: projection lens
130,550: substrate
140,540: laser beam
210,220,230: the printing opacity pattern
410,420,430,440,530: optical mask pattern
512a: transparency carrier
520: baseplate carrier
530a: first area pattern
530b: second area pattern
532: the first sub pattern
532a, 536a: slit
534: the second sub pattern
536: the three sub pattern
542: the first irradiation areas
544: the second irradiation areas
560: amorphous silicon layer
560 ': polysilicon layer
572: first direction
574: second direction
582,584: translate phase
610,620,630,640,650,660,670,680: step
L: first transparent area
L1, L2, L3, L4, M1, M2: rectangular-shaped pattern
M: second transparent area
Embodiment
Can't carry out two-way scanning and shortcoming that the process time is long at using existing optical mask pattern design, the present invention proposes following photomask, not only can be used in the two-way laser crystallization technology that scans, and more can shorten the process time.Below be illustrated as the preferred embodiments of the present invention, but be not in order to limit the present invention.
Fig. 5 illustrates the schematic diagram into a kind of sequential lateral solidifcation laser crystallization apparatus of the embodiment of the invention.Please earlier with reference to Fig. 5, this sequential lateral solidifcation laser crystallization apparatus 500 comprises: lasing light emitter (not illustrating), optical system 5 10 and baseplate carrier 520, and optical system 510 comprises photomask 512 and projection lens 514.
Particularly, photomask 512 of the present invention is applicable to the sequential lateral solidifcation laser crystal method, this photomask 512 comprises transparency carrier 512a, this transparency carrier 512a is provided with an optical mask pattern 530, and optical mask pattern 530 comprises first area pattern 530a and second area pattern 530b each other in the mirror image symmetry, wherein, when a laser beam 540 being radiated on the photomask 512 and forming an irradiation area 544, the area of this irradiation area 544 is less than the area of optical mask pattern 530.
It should be noted that in one embodiment of this invention the area of irradiation area 544 is more than or equal to the area of first area pattern 530a, and the area of irradiation area 544 also can be more than or equal to the area of second area pattern 530b.Thus, can make laser beam 540 complete patternings, and then be radiated on the substrate 550 that forms amorphous silicon layer 560, so that amorphous silicon layer 560 is transformed into polysilicon layer 560 ' by first area pattern 530a or second area pattern 530b.
Fig. 6 illustrates the schematic top plan view into the photomask among Fig. 5.Please refer to Fig. 6, in the present embodiment, optical mask pattern 530 comprises first sub pattern 532, second sub pattern 534 and the 3rd sub pattern 536, and second sub pattern 534 is between first sub pattern 532 and the 3rd sub pattern 536, wherein, first sub pattern 532 and second sub pattern 534 constitute first area pattern 530a, and second sub pattern 534 and the 3rd sub pattern 536 constitute second area pattern 530b.
Illustrate as Fig. 6, first area pattern 530a and second area pattern 530b itself are the design of asymmetric pattern, and, first area pattern 530a and second area pattern 530b mirror images of each other symmetry.In addition, in optical mask pattern 530, have transparent area (blank parts as shown in Figure 6) and non-transparent area (oblique line part as shown in Figure 6), above-mentioned laser beam 540 is can pass transparent area and shine on the amorphous silicon layer 560, so that amorphous silicon layer 560 changes polysilicon layer 560 ' into.
Particularly, are the design that are used for eliminating film projection problem as the optical mask pattern 530 that Fig. 6 illustrated, thereby in first sub pattern 532 of both sides and the 3rd sub pattern 536, are provided with a plurality of slit 532a, 536a (transparent area).Certainly, in other embodiments, optical mask pattern 530 also can be the design that is used for increasing polysilicon grain (kenel that illustrates as Fig. 3), as long as spirit according to the invention, that is, make optical mask pattern 530 comprise first area pattern 530a and second area pattern 530b, and make laser beam 540 be radiated on the photomask 512 formed irradiation area 544 areas less than the area of optical mask pattern 530 each other in the mirror image symmetry.The present invention does not limit the kind and the form of optical mask pattern design.
Moreover, above-mentioned optical mask pattern also is not limited to only comprise the design of first sub pattern 532, second sub pattern 534 and the 3rd sub pattern 536, it also can be design with a plurality of sub pattern, as long as the sub pattern of part constitutes first area pattern 530a, and another sub pattern partly constitutes second area pattern 530b, and first area pattern 530a and second area pattern 530b are each other in the mirror image symmetry.The present invention does not limit the quantity of the sub pattern that the optical mask pattern designing institute comprises.
Below, the method for utilizing above-mentioned photomask and then making the amorphous silicon layer crystallization going on to say.
Fig. 7 A～7C illustrates the steps flow chart schematic diagram into the method for crystallising of a kind of amorphous silicon layer of the preferred embodiment of the present invention.Please jointly with reference to Fig. 5, Fig. 6 and Fig. 7 A～7C.
At first, please refer to Fig. 7 A, a substrate 550 is provided, form an amorphous silicon layer 560 on this substrate 550.Wherein, substrate 550 for example is the substrate of glass substrate, quartz base plate or other kind.And the method that forms this amorphous silicon layer 560 for example is chemical vapour deposition technique or other method that is fit to, and it is not limited at this.
Then, please refer to Fig. 7 B, a photomask 512 is provided, this photomask 512 has an optical mask pattern 530, and optical mask pattern 530 comprises a first area pattern 530a and a second area pattern 530b each other in the mirror image symmetry.It should be noted that this photomask 530 is for example for the photomask that Fig. 6 illustrated, so do not repeated at this.
Come again, please refer to Fig. 5, Fig. 6 and Fig. 7 C, choosing first area pattern 530a is first irradiation area 542, and toward first direction 572 moving substrates 550, so that laser beam 540 is radiated at amorphous silicon layer 560 on the first direction 572 by first area pattern 530a.Thus, can on first direction 572, carry out the crystallization processes of amorphous silicon layer 560.
Continue it, referring again to Fig. 5, Fig. 6 and Fig. 7 C, choosing second area pattern 530b is second irradiation area 544, and toward second direction 574 moving substrates 550 opposite with first direction 572, so that laser beam 540 is radiated at amorphous silicon layer 560 on the second direction 572 by second area pattern 530b.Thus, can on second direction 574, carry out the crystallization processes of amorphous silicon layer 560.
Afterwards, please refer to Fig. 5, Fig. 6 and Fig. 7 C, repeat in the step that scans of first direction 572, so that whole amorphous silicon layers 560 changes polysilicon layer 560 ' into second direction 574.
It should be noted that, in one embodiment, the area of first irradiation area 542 is more than or equal to the area of first area pattern 530a, and the area of second irradiation area 544 is more than or equal to the area of second area pattern 530b, and then can make laser beam 540 complete patternings by first area pattern 530a or second area pattern 530b, to promote the effect that amorphous silicon layer 560 is changed into polysilicon layer 560 '.
In addition, the area of the area of first irradiation area 542 and second irradiation area 544 for example is during less than the area of optical mask pattern 530, can select first area pattern 530a or second area pattern 530b according to the direction that substrate 550 moves, to reach the two-way function that scans.That is to say, when on first direction 572, scanning, can choose first area pattern 530a as first irradiation area 542; Similarly, when on second direction 574, scanning, can choose second area pattern 530b as second irradiation area 544.Therefore, the method for crystallising of amorphous silicon layer of the present invention can carry out two-way scanning, and the number of times of required moving substrate 550 and laser radiation time number average is less, and then shortens the process time and promote the technology production capacity.
It should be noted that, please be simultaneously with reference to Fig. 5 and Fig. 7 C, from being converted to toward first direction 572 mobile before the moving of second direction 574, carrying out align substrates 550 and photomask 512 simultaneously and choosing second area pattern 530b is the operation of second irradiation area 544 with substrate 550.
That is to say, during the translate phase 582 that in as Fig. 7 C, illustrated, the operation that can carry out align substrates 550 and photomask 512 simultaneously and choose second area pattern 530b.Therefore, the action of choosing second area pattern 530b of the present invention can't increase the process time of the present invention.
In addition, from being converted to toward second direction 574 mobile before the moving of first direction 572, carrying out align substrates 550 and photomask 512 simultaneously and choosing first area pattern 530a is the operation of first irradiation area 542 with substrate 550.
Similarly, during the translate phase 584 that in as Fig. 7 C, illustrated, the operation that can carry out align substrates 550 and photomask 512 simultaneously and choose first area pattern 530a.Therefore, the action of choosing first area pattern 530a of the present invention can't increase the process time of the present invention.
Fig. 8 illustrates the flow chart of steps into the method for crystallising of the amorphous silicon layer of the preferred embodiment of the present invention.Please in step 610, begin the crystallization processes of amorphous silicon layer 560 simultaneously with reference to Fig. 7 A～7C and Fig. 8.Then, in step 620, moving substrate 550 and carry out desire the aligning of crystallization position, choose first area pattern 530a simultaneously, on first direction 572, can carry out laser scanning.Come again, in step 630, the laser scanning of beginning on first direction 572.Continue it, in step 640, judge whether to finish the laser scanning action of whole panels.If then carry out step 660, that is stops the action of laser scanning.If not, then carry out step 650.
Hold above-mentioned, in step 650, similarly moving substrate 550 and carry out desire the aligning of crystallization position, choose second area pattern 530b simultaneously, on second direction 574, can carry out laser scanning.Then, in step 670, the laser scanning of beginning on second direction 574.Afterwards, in step 680, judge whether to finish the laser scanning action of whole panels.If then carry out step 660, that is stops the action of laser crystallization.If not, then get back to step 620, proceed the laser scanning action on first direction 572.By the steps flow chart that Fig. 8 illustrated, can make the amorphous silicon layer 560 on the substrate 550 change polysilicon layer 560 ' fully into.
In sum, the method for crystallising of amorphous silicon layer of the present invention and photomask thereof have following advantage:
(1) since the area of optical mask pattern greater than the irradiation area area of laser beam, so when on first direction, carrying out laser crystallization technology, can only choose the first area pattern; And when on second direction, carrying out laser crystallization technology, select the second area pattern again.Therefore, the method for crystallising of amorphous silicon layer of the present invention can carry out two-way scanning, and reduces laser radiation number of times and moving substrate number of times, to promote process efficiency and production capacity effectively.
(2) operation of choosing first area pattern or second area pattern is the action of carrying out simultaneously in the time of the conversion scan direction.Therefore, the operation of choosing first area pattern or second area pattern can't increase the process time.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (12)
1. the method for crystallising of an amorphous silicon layer comprises:
(A) provide substrate, formed amorphous silicon layer on this substrate;
(B) provide photomask, this photomask has optical mask pattern, and this optical mask pattern comprises first area pattern and second area pattern each other in the mirror image symmetry;
(C) choosing this first area pattern is first irradiation area, and moves this substrate toward first direction, so that laser beam is radiated on this amorphous silicon layer on this first direction by this first area pattern;
(D) choosing this second area pattern is second irradiation area, and moves this substrate toward the second direction opposite with this first direction, so that this laser beam is radiated on this amorphous silicon layer on this second direction by this second area pattern; And
(E) repeat this (C), (D) step, so that the amorphous silicon layer on this substrate changes polysilicon layer fully into.
2. the method for crystallising of amorphous silicon layer as claimed in claim 1, wherein the area of this first irradiation area is more than or equal to the area of this first area pattern.
3. the method for crystallising of amorphous silicon layer as claimed in claim 1, wherein the area of this second irradiation area is more than or equal to the area of this second area pattern.
4. the method for crystallising of amorphous silicon layer as claimed in claim 1, wherein the area of this first irradiation area is less than the area of this optical mask pattern.
5. the method for crystallising of amorphous silicon layer as claimed in claim 1, wherein the area of this second irradiation area is less than the area of this optical mask pattern.
6. the method for crystallising of amorphous silicon layer as claimed in claim 1, wherein, this substrate from being converted to toward this first direction mobile before the moving of this second direction, is aimed at this substrate and this photomask simultaneously and chosen the operation that this second area pattern is this second irradiation area.
7. the method for crystallising of amorphous silicon layer as claimed in claim 1, wherein, this substrate from being converted to toward this second direction mobile before the moving of this first direction, is aimed at this substrate and this photomask simultaneously and chosen the operation that this first area pattern is this first irradiation area.
8. the method for crystallising of amorphous silicon layer as claimed in claim 1, wherein, this optical mask pattern comprises:
First sub pattern;
Second sub pattern; And
The 3rd sub pattern, and this second sub pattern is between this first sub pattern and the 3rd sub pattern;
Wherein, this first sub pattern and this second sub pattern constitute this first area pattern, and this second sub pattern and the 3rd sub pattern constitute this second area pattern.
9. a photomask is applicable to the sequential lateral solidifcation laser crystal method, and this photomask comprises:
Transparency carrier, this transparency carrier is provided with optical mask pattern, and this optical mask pattern comprises first area pattern and second area pattern each other in the mirror image symmetry;
Wherein, when making laser beam irradiation on this photomask and when forming irradiation area, the area of this irradiation area is less than the area of this optical mask pattern.
10. photomask as claimed in claim 9, wherein the area of this irradiation area is more than or equal to the area of this first area pattern.
11. photomask as claimed in claim 9, wherein the area of this irradiation area is more than or equal to the area of this second area pattern.
12. photomask as claimed in claim 9, wherein, this optical mask pattern comprises:
First sub pattern;
Second sub pattern; And
The 3rd sub pattern, and this second sub pattern is between this first sub pattern and the 3rd sub pattern;
Wherein, this first sub pattern and this second sub pattern constitute this first area pattern, and this second sub pattern and the 3rd sub pattern constitute this second area pattern.
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| CNA2006101516107A CN101140853A (en) | 2006-09-07 | 2006-09-07 | Crystallization method of amorphous silicon layer and photo mask thereof |
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| CNA2006101516107A CN101140853A (en) | 2006-09-07 | 2006-09-07 | Crystallization method of amorphous silicon layer and photo mask thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106024604A (en) * | 2016-08-02 | 2016-10-12 | 京东方科技集团股份有限公司 | Laser annealing equipment |
| CN108907482A (en) * | 2018-09-26 | 2018-11-30 | 无锡先导智能装备股份有限公司 | Laser jumps type tab excision forming device and laser die cutting machine |
| CN110382158A (en) * | 2016-10-06 | 2019-10-25 | 卓泰克激光股份有限公司 | Carved with laser plotter, mark and/or inscribe workpiece method and corresponding laser plotter |
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2006
- 2006-09-07 CN CNA2006101516107A patent/CN101140853A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106024604A (en) * | 2016-08-02 | 2016-10-12 | 京东方科技集团股份有限公司 | Laser annealing equipment |
| CN106024604B (en) * | 2016-08-02 | 2018-11-23 | 京东方科技集团股份有限公司 | A kind of laser annealing apparatus |
| CN110382158A (en) * | 2016-10-06 | 2019-10-25 | 卓泰克激光股份有限公司 | Carved with laser plotter, mark and/or inscribe workpiece method and corresponding laser plotter |
| CN110382158B (en) * | 2016-10-06 | 2021-10-01 | 卓泰克激光股份有限公司 | Method for engraving, marking and/or inscribing a workpiece with a laser plotter and corresponding laser plotter |
| CN108907482A (en) * | 2018-09-26 | 2018-11-30 | 无锡先导智能装备股份有限公司 | Laser jumps type tab excision forming device and laser die cutting machine |
| CN108907482B (en) * | 2018-09-26 | 2024-01-02 | 无锡先导智能装备股份有限公司 | Using method of laser jump type tab cutting and forming device and laser die cutting machine |
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