CN101131515B - Thin film transistor array substrate and liquid crystal display device - Google Patents

Thin film transistor array substrate and liquid crystal display device Download PDF

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CN101131515B
CN101131515B CN2006101261019A CN200610126101A CN101131515B CN 101131515 B CN101131515 B CN 101131515B CN 2006101261019 A CN2006101261019 A CN 2006101261019A CN 200610126101 A CN200610126101 A CN 200610126101A CN 101131515 B CN101131515 B CN 101131515B
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刘梦骐
张原豪
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Chunghwa Picture Tubes Ltd
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Abstract

一种应用于液晶显示装置的薄膜晶体管阵列基板,其至少有两个彼此电性连接的储存电容线。此利用导电接触孔与导电层电性连接的储存电容线属于一扫描线两侧的两相邻像素,其能够消除液晶显示装置的横向串影。

Figure 200610126101

A thin film transistor array substrate for a liquid crystal display device has at least two storage capacitor lines electrically connected to each other. The storage capacitor lines electrically connected to the conductive layer by a conductive contact hole belong to two adjacent pixels on both sides of a scanning line, which can eliminate the lateral crosstalk of the liquid crystal display device.

Figure 200610126101

Description

薄膜晶体管阵列基板及液晶显示装置 Thin film transistor array substrate and liquid crystal display device

技术领域technical field

本发明有关一种薄膜晶体管阵列基板,特别是提供一种液晶显示装置所利用的薄膜晶体管阵列基板。The present invention relates to a thin film transistor array substrate, and in particular provides a thin film transistor array substrate used in a liquid crystal display device.

背景技术Background technique

近年来,携带式通讯设备与个人电脑的显示器基本上为液晶面板。对于下个世纪的显示器而言,液晶面板、有机电激发光面板(organic electroluminescentpanel)与无机电激发光面板(inorganic electroluminescence panel)皆受到瞩目。上述类型的面板一般皆具有排列成矩阵的像素,并且由两种驱动系统:主动或被动矩阵驱动系统驱动。In recent years, the displays of portable communication devices and personal computers are basically liquid crystal panels. For displays in the next century, liquid crystal panels, organic electroluminescence panels and inorganic electroluminescence panels are all attracting attention. Panels of the above types generally have pixels arranged in a matrix and are driven by two types of drive systems: active or passive matrix drive systems.

有关上述显示器的重要的课题之一为水平或垂直串影(crosstalk)的发生。串影现象是于一例如视窗的一静态图案显示时,在特定方向上有亮度不均的现象。亮度不均与电极线电压下降有关。举例来说,横向串影通常发生于亮暗条纹背景与黑色矩形样式的液晶显示器上,其源自共通电极电位的下降。因此,如何减少串影以增加显示面板的品味(grade)是液晶显示装置重要的课题之一。One of the important issues related to the above displays is the occurrence of horizontal or vertical crosstalk. Cross-shadowing is a phenomenon in which there is uneven brightness in a specific direction when a static pattern such as a window is displayed. The uneven brightness is related to the voltage drop of the electrode line. For example, horizontal cross-image usually occurs on a liquid crystal display with a bright and dark striped background and a black rectangle pattern, which is caused by a drop in the potential of the common electrode. Therefore, how to reduce the cross-image to increase the grade of the display panel is one of the important issues of the liquid crystal display device.

发明内容Contents of the invention

为了解决上述的问题,本发明的一实施例提供一种液晶显示装置的像素阵列。利用电性连接位于相邻像素的储存电容线的设计,可以消除共通电极的电压下降。In order to solve the above problems, an embodiment of the present invention provides a pixel array of a liquid crystal display device. The voltage drop of the common electrode can be eliminated by using the design of electrically connecting the storage capacitor lines located in adjacent pixels.

本发明的目的是提供一种薄膜晶体管阵列基板,应用于一液晶显示装置上。以扫描线相邻的像素具有电性连接的储存电容线,且其以随机的方式分布于整个面板上。The object of the present invention is to provide a thin film transistor array substrate applied to a liquid crystal display device. Pixels adjacent to the scan line have electrically connected storage capacitor lines, which are randomly distributed on the entire panel.

本发明的另一目的是提供一种液晶显示装置,其具有电性连接的储存电容线设计,且此储存电容线设计以一图案分布的方式分布,如此可维持液晶显示装置的开口率。Another object of the present invention is to provide a liquid crystal display device having electrically connected storage capacitor lines, and the storage capacitor lines are distributed in a pattern distribution, so that the aperture ratio of the liquid crystal display device can be maintained.

本发明的又一目的是提供一种提高对比的液晶显示装置,一导电层部分覆盖一储存电容线,借以防止漏光。Another object of the present invention is to provide a liquid crystal display device with improved contrast. A conductive layer partially covers a storage capacitor line to prevent light leakage.

为达到上述目的,本发明提供一种薄膜晶体管阵列,包含多个数据线与多个扫描线交叉以定义多个像素区域。多个储存电容线设置于像素区域中,其中每一储存电容线包含一第一线组件其平行扫描线的方向设置,以及一第二线组件平行数据线的方向设置。多个像素电极对应设置于像素区域,并电性连接对应的薄膜晶体管。多个接触孔,每一接触孔设置于第二线组件的端点,以及一导电层连接两相邻像素的第二线组件,并借助接触孔与第二线组件电性连接。其中储存电容线与多个扫描线为相同膜层且储存电容线与像素电极为不同膜层。To achieve the above object, the present invention provides a thin film transistor array, which includes a plurality of data lines intersecting with a plurality of scan lines to define a plurality of pixel regions. A plurality of storage capacitor lines are arranged in the pixel area, wherein each storage capacitor line includes a first line component arranged parallel to the direction of the scan line, and a second line component arranged parallel to the direction of the data line. A plurality of pixel electrodes are correspondingly arranged in the pixel area, and are electrically connected to corresponding thin film transistors. A plurality of contact holes, each contact hole is arranged at the terminal of the second line component, and a conductive layer connects the second line component of two adjacent pixels, and is electrically connected with the second line component through the contact hole. The storage capacitor line and the plurality of scan lines are of the same film layer, and the storage capacitor line and the pixel electrode are of different film layers.

附图说明Description of drawings

图1所示为根据本发明的一基板实施例的透视示意图。FIG. 1 is a schematic perspective view of an embodiment of a substrate according to the present invention.

图2所示为根据本发明的一平面显示器实施例的剖面示意图,此平面显示器具有沿着图1的AA’剖线的薄膜晶体管阵列基板。FIG. 2 is a schematic cross-sectional view of an embodiment of a flat-panel display according to the present invention. The flat-panel display has a thin film transistor array substrate along line AA' in FIG. 1 .

具体实施方式Detailed ways

图1为根据本发明的一实施例的正面示意图。一薄膜晶体管阵列基板(thinfilm transistor array substrate)包含多个扫描线12、数据线14、薄膜晶体管16、储存电容线18、像素电极20与一导电层22。扫描线12,也可称为栅极线(gate line),其于一方向上,例如图上X轴方向上排列。数据线14,也可称为源极线(source line),于图上Y轴方向上以跨越扫描线12的方式排列,其中一像素区域由两相邻的扫描线12与两相邻的数据线14所定义。薄膜晶体管16位于扫描线12与数据线14交叉的位置上,且每一薄膜晶体管16对应每一像素区域,每一像素电极20设置于对应的每一像素区域内,且电性连接对应的薄膜晶体管16。FIG. 1 is a schematic front view of an embodiment according to the present invention. A thin film transistor array substrate includes a plurality of scan lines 12 , data lines 14 , thin film transistors 16 , storage capacitor lines 18 , pixel electrodes 20 and a conductive layer 22 . The scan lines 12, also called gate lines, are arranged in one direction, such as the X-axis direction in the figure. Data lines 14, also called source lines (source lines), are arranged across the scan lines 12 in the direction of the Y-axis in the figure, wherein one pixel area consists of two adjacent scan lines 12 and two adjacent data lines. Defined by line 14. The thin film transistor 16 is located at the intersection of the scanning line 12 and the data line 14, and each thin film transistor 16 corresponds to each pixel area, and each pixel electrode 20 is arranged in each corresponding pixel area, and is electrically connected to the corresponding thin film Transistor 16.

其次,储存电容线18以沿着多个扫描线12的像素区域上延伸的方式形成。于一实施例中,每一储存电容线18包含一第一线组件181(first linecomponent)以扫描线12的方向上延伸的方式形成,以及一第二线组件182沿着数据线14的方向并位于每一像素区域中。于此实施例中,第一线组件181与两个第二线组件182组成储存电容线18的单元对应每一像素区域。再者,一延展部分183位于第二线组件182的末端,此第二线组件182较另一第二线组件182远离对应的薄膜晶体管16。Secondly, the storage capacitor line 18 is formed to extend along the pixel area of the plurality of scan lines 12 . In one embodiment, each storage capacitor line 18 includes a first line component 181 (first line component) formed in a manner extending in the direction of the scan line 12, and a second line component 182 positioned along the direction of the data line 14 in each pixel area. In this embodiment, the first line element 181 and the two second line elements 182 form a unit of the storage capacitor line 18 corresponding to each pixel area. Furthermore, an extension portion 183 is located at the end of the second wire component 182 , and the second wire component 182 is farther away from the corresponding thin film transistor 16 than the other second wire component 182 .

根据本发明的精神,导电接触孔184位于部分第二线组件182上的延展部分183。于本实施例中,两个导电接触孔184可以分布于以一扫描线12相邻的两个第二线组件182上。再者,对于薄膜晶体管阵列基板而言,导电接触孔184可以以随机或图案设计的方式分布。举例来说,若是于一液晶显示器的若干区域可以观察到较明显的横向性串影(lateral crosstalk)现象时,可以设计导电接触孔184分布于那些特定的区域。另外,即使没有观察到明显的横向性串影时,也可以随机的方式分布导电接触孔184以确保显示品味(display grade)。再者,导电接触孔184的分布可以考量到亮度以确保亮度不至于受到明显的影响,例如亮度减少0.7%时人眼不会感受到其差异。According to the spirit of the present invention, the conductive contact hole 184 is located on the extension portion 183 of part of the second wire assembly 182 . In this embodiment, two conductive contact holes 184 may be distributed on two second line elements 182 adjacent to one scan line 12 . Furthermore, for the thin film transistor array substrate, the conductive contact holes 184 may be distributed in a random or patterned manner. For example, if a relatively obvious lateral crosstalk phenomenon can be observed in several areas of a liquid crystal display, the conductive contact holes 184 can be designed to be distributed in those specific areas. Additionally, the conductive contact holes 184 may be distributed in a random manner to ensure display grade even when no significant lateral cross-image is observed. Furthermore, the distribution of the conductive contact holes 184 can take into account the brightness to ensure that the brightness will not be significantly affected, for example, human eyes will not feel the difference when the brightness decreases by 0.7%.

于本实施例中,导电接触孔184的功能是与导电层22的设计相配合。对于以扫描线12相邻的任两像素区域而言,所述导电层22设置于具有对应导电接触孔184的两个第二线组件182上,借以电性连接两个第二线组件182。根据上述,所述导电层22跨越导电接触孔184之间的扫描线12,即跨越两相邻像素之间的扫描线12。虽然由于导电层22的跨越可能造成扫描线12的负载增加约5%,但是对于扫描线12的波形传送与传输并不会产生可见的影响。再者,本发明的特征之一在于像素电极20与部分第二线组件182重叠,借以增加液晶显示器的对比。根据上述,像素电极20的设计可以应用于不同型式的显示器基板,例如扭曲向列(Twisted Nematic,TN)型、广视角多畴垂直配向(Multi-domain Vertically Align,MVA)型或是广视角多域同质配向型(Multi-domain Homeotropic Align,MHA)。In this embodiment, the function of the conductive contact hole 184 is to match the design of the conductive layer 22 . For any two pixel regions adjacent to the scan line 12 , the conductive layer 22 is disposed on the two second line components 182 having corresponding conductive contact holes 184 , so as to electrically connect the two second line components 182 . According to the above, the conductive layer 22 spans the scan line 12 between the conductive contact holes 184 , that is, spans the scan line 12 between two adjacent pixels. Although the load of the scan line 12 may increase by about 5% due to the crossover of the conductive layer 22 , it does not have any visible impact on the waveform transmission and transmission of the scan line 12 . Furthermore, one of the features of the present invention is that the pixel electrode 20 overlaps part of the second line assembly 182, so as to increase the contrast of the liquid crystal display. According to the above, the design of the pixel electrode 20 can be applied to different types of display substrates, such as twisted nematic (Twisted Nematic, TN) type, wide viewing angle multi-domain vertical alignment (Multi-domain Vertically Align, MVA) type or wide viewing angle multi-domain Domain homogeneous alignment (Multi-domain Homeotropic Align, MHA).

图2为根据本发明的一实施例,说明一液晶显示器具有沿着图1的AA’的薄膜晶体管阵列基板的剖面示意图。一液晶显示器包含一彩色滤光基板结构26与对向的薄膜晶体管阵列基板,且一液晶层28介于两者之间。于一实施例中,彩色滤光基板结构26可以包含一彩色滤光层262、一保护层263、一共通电极264与一聚酰亚胺(polyimide)配向膜265形成于一玻璃基板261上。另一方面,对于薄膜晶体管阵列基板而言,一第一金属层形成于一玻璃基板101上,然后再进行图案移转以形成扫描线12与储存电容线。之后,一绝缘层103形成于扫描线12与储存电容线上。根据本发明的精神,绝缘层103经过图案移转以形成储存电容线的第二线组件上的接触孔。一导电层填入接触孔中以形成导电接触孔184,且导电层覆盖于绝缘层103上。对于导电层进行光刻步骤以形成图案化的像素电极20及导电层22。根据上述,导电层22跨越扫描线12以电性连接两储存电容线。FIG. 2 is a schematic cross-sectional view illustrating a liquid crystal display having a TFT array substrate along line AA' of FIG. 1 according to an embodiment of the present invention. A liquid crystal display includes a color filter substrate structure 26 and an opposite thin film transistor array substrate, and a liquid crystal layer 28 is interposed therebetween. In one embodiment, the color filter substrate structure 26 may include a color filter layer 262 , a protection layer 263 , a common electrode 264 and a polyimide alignment film 265 formed on a glass substrate 261 . On the other hand, for the thin film transistor array substrate, a first metal layer is formed on a glass substrate 101, and then the pattern transfer is performed to form the scanning lines 12 and the storage capacitor lines. Afterwards, an insulating layer 103 is formed on the scan line 12 and the storage capacitor line. According to the spirit of the present invention, the insulating layer 103 is pattern transferred to form a contact hole on the second line assembly of the storage capacitor line. A conductive layer is filled into the contact hole to form the conductive contact hole 184 , and the conductive layer covers the insulating layer 103 . A photolithography step is performed on the conductive layer to form the patterned pixel electrode 20 and the conductive layer 22 . According to the above, the conductive layer 22 straddles the scan line 12 to electrically connect the two storage capacitor lines.

以上所述的实施例仅为说明本发明的技术思想及特点,其目的在使熟悉本技术的人士能够了解本发明的内容并据以实施,当不能予以限定本发明的专利范围,凡是依本发明所揭示的精神所作的等同的变化或修饰,仍应涵盖在本申请的权利要求范围内。The embodiments described above are only to illustrate the technical ideas and characteristics of the present invention, and its purpose is to enable those familiar with the technology to understand the content of the present invention and implement it accordingly. The equivalent changes or modifications made by the disclosed spirit of the invention shall still fall within the scope of the claims of the present application.

Claims (16)

1. thin-film transistor array base-plate comprises:
A plurality of sweep traces;
A plurality of data lines intersect to define a plurality of pixel regions with described a plurality of sweep traces;
A plurality of thin film transistor (TFT)s are positioned on the position that described a plurality of sweep trace and described a plurality of data lines intersect;
A plurality of capacitor storage beam are to be arranged in each described pixel region, and wherein, each described capacitor storage beam comprises one first line component, and the direction setting of its parallel described sweep trace, and one second line component are the direction settings of parallel described data line;
A plurality of pixel electrodes, its correspondence is arranged at described pixel region, and electrically connects corresponding described thin film transistor (TFT);
A plurality of contact holes, each described contact hole are to be arranged on the end points of described second line component; And
One conductive layer, it connects described second line component of two adjacent pixels, and electrically connects by described contact hole and described second line component,
Wherein said capacitor storage beam and described a plurality of sweep traces are that identical rete and described capacitor storage beam and described pixel electrode are different retes.
2. thin-film transistor array base-plate as claimed in claim 1 is characterized in that described a plurality of conduction contact hole is distributed in described a plurality of pixel region at random mode.
3. thin-film transistor array base-plate as claimed in claim 1 is characterized in that described a plurality of conduction contact hole is distributed in described a plurality of pixel region in a kind of mode of pattern.
4. thin-film transistor array base-plate as claimed in claim 1, it is characterized in that for arbitrary described second line component with described corresponding conduction contact hole an extension is positioned at the terminal of described second line component and in order to the conduction contact hole of ccontaining described correspondence.
5. thin-film transistor array base-plate as claimed in claim 1 is characterized in that also crossing over described sweep trace between the described two adjacent pixels at the described conductive layer of described second line component with described corresponding conduction contact hole.
6. thin-film transistor array base-plate as claimed in claim 1 is characterized in that two described second line components are oppositely arranged, and is arranged in each described pixel region.
7. thin-film transistor array base-plate as claimed in claim 6 is characterized in that for each described pixel region, and described second line component with described corresponding conduction contact hole is away from described corresponding thin film transistor (TFT).
8. thin-film transistor array base-plate as claimed in claim 6, it is characterized in that described pixel electrode also between described two second line components and with the part described two second line components overlapping.
9. liquid crystal indicator comprises:
One first board structure;
One second board structure is in the face of described first board structure, and wherein said second board structure comprises:
A plurality of sweep traces;
A plurality of data lines intersect to define a plurality of pixel regions with described a plurality of sweep traces;
A plurality of capacitor storage beam, it is arranged in each described pixel region, and wherein, each described capacitor storage beam comprises one first line component, the direction setting of its parallel described sweep trace, and one second line component, the direction setting of its parallel described data line;
A plurality of pixel electrodes, its correspondence is arranged at described pixel region, and electrically connects corresponding described thin film transistor (TFT);
A plurality of conduction contact holes, each described contact hole are to be arranged on the end points of described second line component; And
One conductive layer, it connects described second line component of two adjacent pixels, and electrically connects by described contact hole and described second line component,
Wherein said capacitor storage beam and described a plurality of sweep traces are that identical rete and described capacitor storage beam and described pixel electrode are different retes; And
One liquid crystal layer is between described first board structure and described second board structure.
10. liquid crystal indicator as claimed in claim 9 is characterized in that described second board structure also comprises a plurality of thin film transistor (TFT)s and is positioned on the position that described a plurality of sweep trace and described a plurality of data lines intersect.
11. liquid crystal indicator as claimed in claim 9 is characterized in that described conduction contact hole is distributed in described a plurality of pixel region at random mode.
12. liquid crystal indicator as claimed in claim 9 is characterized in that described a plurality of conduction contact hole is distributed in described a plurality of pixel region in a kind of mode of pattern.
13. liquid crystal indicator as claimed in claim 9 is characterized in that also crossing over described sweep trace between the described two adjacent pixels at the described conductive layer of described second line component with described corresponding conduction contact hole.
14. liquid crystal indicator as claimed in claim 9 is characterized in that described first board structure comprises:
One glass substrate;
One chromatic filter layer is positioned at described glass substrate;
One common electrode is positioned on the described chromatic filter layer; And
One alignment film is positioned on the described common electrode.
15. liquid crystal indicator as claimed in claim 9 is characterized in that described a plurality of sweep trace and described a plurality of capacitor storage beam form with the same metal layer on a glass substrate.
16. liquid crystal indicator as claimed in claim 9 is characterized in that described pixel electrode and described conductive layer are to form with an indium tin oxide.
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