CN101127443A - A controllable silicon compound switch with protection device - Google Patents
A controllable silicon compound switch with protection device Download PDFInfo
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- CN101127443A CN101127443A CNA2007100495502A CN200710049550A CN101127443A CN 101127443 A CN101127443 A CN 101127443A CN A2007100495502 A CNA2007100495502 A CN A2007100495502A CN 200710049550 A CN200710049550 A CN 200710049550A CN 101127443 A CN101127443 A CN 101127443A
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- controllable silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/30—Reactive power compensation
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Abstract
The utility model discloses a thyristor combination switch with a protection unit; wherein, a monostable circuit is connected in series between the thyristor trigger signal output circuit and the power trigger circuit of the thyristor combination switch of the single chip system. With the protection unit, even if the output of the single-chip microcomputer is out of control, the overtime break-over does not occur in the trigger circuit, which obviates the possible short circuit fault incurred by the over-time break-over; therefore, the thyristor and the load of the silicon, more particularly the safety of the capacitive load and the power network, are protected effectively; thus, the reliability of the combination switch is improved, the damage rate is reduced, and the work efficiency and the economic benefit are enhanced.
Description
Technical field
The present invention relates to a kind of capacitance switch of power system reactive power compensation, especially the device of the backup protection of the instantaneous conducting of controllable silicon.
Background technology
Controllable silicon also claims thyristor, and it is simple in structure, and control is convenient, and price is not high.As long as add correspondent voltage, in control extremely, apply the conducting triggering signal again, but just conducting between the both positive and negative polarity there is electric current to flow at its both positive and negative polarity.Particularly bidirectional triode thyristor is as long as have the conducting triggering signal in the control extremely, and two interpolars use easily reliable with regard to conducting.With controllable silicon and the relay tip combination switch (also claiming compound relay) that constitutes that is in parallel is a kind of new device that is used for the switching power capacitor, its operation principle is like this: when dropping into capacitor, controllable silicon elder generation passing zero trigger at first, relay closes then, its contact are with the controllable silicon short circuit, and this moment, power supply was powered to capacitor by relay tip, during the excision capacitor, at first relay tip disconnects earlier, and the controllable silicon current over-zero turn-offs again then, and this moment, capacitor was cut.
At present, the silicon controlled trigger signal in the combination switch is directly to be exported by the controllable silicon power driving circuit by single-chip microcomputer to drive the controllable silicon conducting.When but this mode is controlled the controllable silicon shutoff,, have no progeny in the relay pass if because single-chip microcomputer is subjected to strong interference, still long-time as conducting more than 1 second, then the controllable silicon loop will arcing occur blowing because of overcurrent time length, thereby causes that short trouble takes place.This is because the controllable silicon loop is to design by the working method that instantaneous conducting is turn-offed again at once.Generally speaking, the conducting operating time was less than 0.1 second.So the reliability that the combination switch of above-mentioned control mode is worked under adverse circumstances obviously is affected.
Summary of the invention
The purpose of this invention is to provide a kind of controllable silicon compound switch with protective device, strong jamming is out of control to be caused controllable silicon to turn-off and fails to turn-off the problem that causes that short trouble takes place because single-chip microcomputer is subjected to solve controllable silicon.
For solving the problems of the technologies described above, technical scheme of the present invention is: be connected in series between the silicon controlled trigger signal output circuit of Single Chip Microcomputer (SCM) system and thyristor gating circuit and insert monostable circuit.
Above-mentioned said circuit with controllable silicon compound switch of protective device comprises controllable silicon, relay, it is to be connected in series to insert monostable circuit between Single Chip Microcomputer (SCM) system and thyristor gating circuit, connect thyristor after the thyristor gating circuit, thyristor connects power capacitor, and the electrical equipment contact is also succeeded in the thyristor two ends; Relay also is connected with Single Chip Microcomputer (SCM) system for one section.
Above-mentioned said monostable circuit can be 555 timers, integrated monostable chip or All Digital Monostable Circuit.
Above-described monostable circuit can be made of electric capacity, resistance, Schmidt circuit, wherein Single Chip Microcomputer (SCM) system is received the input of Schmidt circuit earlier, connect Schmidt circuit and electric capacity respectively behind the output connecting resistance of Schmidt circuit, Schmidt circuit connects the input of controllable silicon power trigger circuit.This programme Schmidt circuit can be connected more than 2 or 2.
Above-described monostable circuit is made of electric capacity, resistance, Schmidt circuit, wherein Single Chip Microcomputer (SCM) system is distinguished connecting resistance and Schmidt circuit after connecing electric capacity earlier, Schmidt circuit connects behind the electric capacity behind the connecting resistance and Schmidt circuit respectively the input with controllable silicon power trigger circuit, resistance one end ground connection.One end of this programme Schmidt circuit also can be connected.
Monostable circuit recited above is being made of the Schmidt circuit and the AND circuit of diode, electric capacity, resistance, series connection.Wherein an end of the negative electrode of diode and electric capacity is connected with Single Chip Microcomputer (SCM) system SCR control output, and the anode of diode is connected with an end of resistance and the input of Schmidt circuit with the other end of electric capacity, and another termination of resistance is public domain altogether; The input of Schmidt circuit series connection back AND circuit links to each other, and connects the input of controllable silicon power driving circuit again, the output termination SCR control utmost point control loop of controllable silicon power driving circuit.Silicon controlled main circuit one termination power, another termination power capacitor, the other end connecting to neutral line of power capacitor.
Above-described monostable circuit also can be made of electric capacity, resistance, integrated monostable chip or All Digital Monostable Circuit, the input of Single Chip Microcomputer (SCM) system connecting resistance and integrated monostable chip or All Digital Monostable Circuit wherein, the input and the electric capacity of integrated monostable chip or All Digital Monostable Circuit output termination controllable silicon power trigger circuit, electric capacity other end ground connection.
In the present invention, the controllable silicon that utilizes monostable circuit that Single Chip Microcomputer (SCM) system is exported triggers useful signal such as positive step signal or negative step signal and carries out effective width restriction processing, and making controllable silicon ON time maximum can only be the monostable pulse duration of monostable circuit output.
Monostable circuit, in various Circuits System, monostable circuit is usually used in occasions such as timing, burst pulse broadening, shaping, time-delay.The work characteristics of traditional monostable flipflop is: 1. it has 1 stable state and 1 temporarily steady state, and under the situation that does not have external trigger impulse effect, its output remains on stable state; 2. under external trigger impulse effect, the monostable flipflop upset enters " stable state temporarily ", supposes that stable state is 0, and then stable state is 1 temporarily.3. after temporarily steady state is kept a period of time, will return stable state from temporary stable state automatically.Time and trigger impulse in stable state stop temporarily are irrelevant, only depend on the parameter of circuit itself.
Use the combination switch behind the present invention,, the situation of circuits for triggering ultra-long time conducting can not take place also, thereby can avoid the generation of the short trouble that may cause because of the conducting of circuits for triggering ultra-long time even single-chip microcomputer output is out of control.Thereby can protect the safety of controllable silicon and load thereof, especially capacity load and electrical network effectively; Make the reliability of combination switch further improve, spoilage reduces greatly, has improved operating efficiency, thereby has improved economic benefit.
Description of drawings
The invention will be further described below in conjunction with the drawings and specific embodiments.
Fig. 1 is the controllable silicon compound switch operation principle block diagram with protective device of the present invention.
The voltage oscillogram of each point when Fig. 2 is Fig. 1 circuit appearance interference.
Fig. 3 is the enforcement circuit diagram with controllable silicon compound switch of protective device of the present invention.
Fig. 4 is another enforcement circuit diagram with controllable silicon compound switch of protective device of the present invention.
Fig. 5 is the another enforcement circuit diagram with controllable silicon compound switch of protective device of the present invention.
Fig. 6 is that the integrated monostable chip with controllable silicon compound switch of protective device of the present invention is implemented circuit diagram.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described.
As shown in Figure 1: the circuit with controllable silicon compound switch of protective device comprises controllable silicon, relay, it is to be connected in series to insert monostable circuit between Single Chip Microcomputer (SCM) system and thyristor gating circuit, connect thyristor after the thyristor gating circuit, thyristor connects power capacitor, and the electrical equipment contact is also succeeded in the thyristor two ends; Relay one end also is connected with Single Chip Microcomputer (SCM) system.
As can be known, monostable circuit is made of diode D, capacitor C 1, resistance R, Schmidt circuit G1 and G2 in circuit theory diagrams of the present invention shown in Figure 2.Wherein an end of the negative electrode of diode D and capacitor C 1 and Single Chip Microcomputer (SCM) system SCR control output 1 are connected to the A point, one end of the other end of the anode of diode D and capacitor C 1 and resistance R and the input of Schmidt circuit G1 are connected to the B point, and another termination of resistance R is public domain altogether; The output of Schmidt circuit G1 is connected with the input of Schmidt circuit G2; The input of the output of Schmidt circuit G2 and AND circuit Gx is connected to the C point, another input of AND circuit Gx is connected with the driving silicon controlled high-frequency pulse signal output 2 of Single Chip Microcomputer (SCM) system, link to each other with the input 4 of controllable silicon power driving circuit with the output D of door Gx, the output 5 and 3 of controllable silicon power driving circuit connects SCR control utmost point control loop.Silicon controlled main circuit one termination power L, another termination power capacitor, the other end connecting to neutral line N of power capacitor.
Shown in Figure 3, be the voltage oscillogram of each respective point among Fig. 2.Among the figure, UA represents Single Chip Microcomputer (SCM) system SCR control output (being the A point among Fig. 1) voltage.UB represents the voltage of resistance R two ends (being the B point among Fig. 1).UC represents the output voltage (that is the C among Fig. 1 order voltage) of monostable circuit.UD represents the input control voltage (that is the D among Fig. 1 order voltage) of controllable silicon power driving circuit.
At t1 constantly, UA uprises level by zero, means that single-chip microcomputer output allows the controllable silicon conducting, suppose that this signal remains unchanged always owing to strong jamming.So because the characteristic of capacitor C 1 determines both end voltage not suddenly change, therefore UB also produces by zero and jumps to high level, then with the charging of capacitor C 1, UB descends gradually, and through the waveform shaping of two Schmidt circuit G1, G2, UC also produces by zero at t1 and jump to high level constantly, along with UB voltage drop to the Schmidt circuit threshold voltage time, be the t2 moment, Schmidt circuit G1, G2 overturn, and UC jumps to low level by high level.Be between high period at UC so, promptly t1 is to the t2 interval, and through AND circuit Gx and logical operation, the driving silicon controlled high-frequency pulse signal of Single Chip Microcomputer (SCM) system will reach the output D end of AND circuit Gx, and pass through the controllable silicon power driving circuit with the controllable silicon conducting.
Obviously, the time of controllable silicon conducting be at t1 in interval between the t2, though the control signal UA time of the controllable silicon conducting that single-chip microcomputer sends how long have.
From the oscillogram of Fig. 3, can obviously discern with above-mentioned analysis, the time of the each conducting of controllable silicon is the longest can only to be that t1 is to the interval between the t2, when occurring in the time of so just can avoiding single-chip microcomputer to be subjected to strong jamming fully exporting by mistake, cause the long-time conducting of controllable silicon to cause and blow arcing, produce the problem that short trouble takes place.Play the purpose of backup protection, improved reliability of products and useful life.
In SCR control principle and practice, we also recognize, adopt other monostable circuits, as long as can to the SCR control signal of Single Chip Microcomputer (SCM) system output no matter be zero effectively or high level effective, can both carry out the interval restriction of conducting, just can reach the longest purpose that is controlled in the conducting limit section of the time that makes the each conducting of controllable silicon.
Monostable circuit shown in Figure 4, the monostable circuit that constitutes by capacitor C 1, resistance R, diode D, Schmidt circuit G1, G2 in the alternate figures 1 fully.Among this figure, monostable circuit is made of capacitor C 1, resistance R, Schmidt circuit G, wherein Single Chip Microcomputer (SCM) system (A) is received the input of Schmidt circuit G1 and G2 earlier, connect Schmidt circuit G2 and capacitor C 1 respectively behind the output connecting resistance R of Schmidt circuit G1, Schmidt circuit G2 receives behind the Schmidt circuit G3 input (C) with controllable silicon power trigger circuit.
Monostable circuit shown in Figure 5, the equally also monostable circuit in the alternate figures 1 fully, among this figure, monostable circuit is made of capacitor C 1, resistance R, Schmidt circuit G, wherein Single Chip Microcomputer (SCM) system (A) meets capacitor C 1 back connecting resistance R1 and Schmidt circuit G1 respectively earlier, Schmidt circuit G1 connect capacitor C 2 back respectively behind connecting resistance R2 and the Schmidt circuit G2 with the input (C) of controllable silicon power trigger circuit, R1 and R2 other end ground connection.But this moment, the SCR control output 1 of Single Chip Microcomputer (SCM) system was that zero level is effective.
Monostable circuit shown in Figure 6, the equally also monostable circuit in the alternate figures 1 fully, among this figure, monostable circuit is made of capacitor C 1, resistance R, integrated monostable chip or All Digital Monostable Circuit Gm, the input of Single Chip Microcomputer (SCM) system (A) connecting resistance R and integrated monostable chip or All Digital Monostable Circuit Gm wherein, the input (C) and the capacitor C of the output termination controllable silicon power trigger circuit of Gm, capacitor C other end ground connection.This monostable circuit can also adopt the All Digital Monostable Circuit of VHDL language design, has solved the problems referred to above of traditional monostable circuit, and it is carried out functional simulation and the sequential simulation result shows, has reached the design effect of expection.
Claims (7)
1. the controllable silicon compound switch with protective device comprises controllable silicon, relay, it is characterized in that: connect between the silicon controlled trigger signal output circuit of Single Chip Microcomputer (SCM) system and silicon controlled power trigger circuit and insert monostable circuit.
2. the controllable silicon compound switch with protective device according to claim 1 is characterized in that: monostable circuit is 555 timers, integrated monostable chip or All Digital Monostable Circuit.
3. according to claim 1 and 2 described combination switch backup protection equipments; it is characterized in that: said circuit with controllable silicon compound switch of protective device comprises controllable silicon, relay; it is to be connected in series to insert monostable circuit between Single Chip Microcomputer (SCM) system and thyristor gating circuit; connect thyristor after the thyristor gating circuit; thyristor connects power capacitor; the electrical equipment contact is also succeeded in the thyristor two ends, and relay one end also is connected with Single Chip Microcomputer (SCM) system.
4. according to claim 1 and 2 described combination switch backup protection equipments; it is characterized in that: described monostable circuit is made of electric capacity, resistance R, Schmidt circuit; wherein Single Chip Microcomputer (SCM) system is received the input of Schmidt circuit earlier; connect Schmidt circuit and electric capacity respectively behind the output connecting resistance of Schmidt circuit, Schmidt circuit connects the input of controllable silicon power trigger circuit.
5. according to claim 1 and 2 described combination switch backup protection equipments; it is characterized in that: described monostable circuit is made of electric capacity, resistance, Schmidt circuit; wherein Single Chip Microcomputer (SCM) system is distinguished connecting resistance and Schmidt circuit after connecing electric capacity earlier; Schmidt circuit connects behind the electric capacity behind the connecting resistance and Schmidt circuit respectively the input with controllable silicon power trigger circuit, resistance one end ground connection.
6. according to claim 1 and 2 described combination switch backup protection equipments, it is characterized in that: described monostable circuit is being made of the Schmidt circuit and the AND circuit of diode, electric capacity, resistance, series connection.Wherein an end of the negative electrode of diode and electric capacity is connected with Single Chip Microcomputer (SCM) system SCR control output, and the anode of diode is connected with an end of resistance and the input of Schmidt circuit with the other end of electric capacity, and another termination of resistance is public domain altogether; The input of Schmidt circuit series connection back AND circuit links to each other, and connects the input of controllable silicon power driving circuit again, the output termination SCR control utmost point control loop of controllable silicon power driving circuit.Silicon controlled main circuit one termination power, another termination power capacitor, the other end connecting to neutral line of power capacitor.
7. according to claim 1 and 2 described combination switch backup protection equipments; it is characterized in that: described monostable circuit also can be made of electric capacity, resistance, integrated monostable chip or All Digital Monostable Circuit; the input of Single Chip Microcomputer (SCM) system connecting resistance and integrated monostable chip or All Digital Monostable Circuit wherein; the input and the electric capacity of integrated monostable chip or All Digital Monostable Circuit output termination controllable silicon power trigger circuit, electric capacity other end ground connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710049550A CN101127443B (en) | 2007-07-11 | 2007-07-11 | A controllable silicon compound switch with protection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710049550A CN101127443B (en) | 2007-07-11 | 2007-07-11 | A controllable silicon compound switch with protection device |
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| Publication Number | Publication Date |
|---|---|
| CN101127443A true CN101127443A (en) | 2008-02-20 |
| CN101127443B CN101127443B (en) | 2012-09-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200710049550A Expired - Fee Related CN101127443B (en) | 2007-07-11 | 2007-07-11 | A controllable silicon compound switch with protection device |
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| Country | Link |
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| CN (1) | CN101127443B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157946A (en) * | 2011-04-01 | 2011-08-17 | 乐山一拉得电网自动化有限公司 | Stepper type trigger synchronous protection of combination switch and core unit thereof |
| CN103066571A (en) * | 2012-12-21 | 2013-04-24 | 广西诺斯贝电气有限公司 | Overload protection method and device of combination switch |
| CN104426150A (en) * | 2013-08-26 | 2015-03-18 | 深圳市华冠电气有限公司 | Single-phase heavy-current compound switch and control method thereof |
| CN104426150B (en) * | 2013-08-26 | 2016-11-30 | 深圳市华冠电气有限公司 | Single-phase big electric current combination switch and control method thereof |
| CN108562851A (en) * | 2018-06-13 | 2018-09-21 | 常州同惠电子股份有限公司 | A kind of switch detection protection circuit |
| CN108872967A (en) * | 2018-05-15 | 2018-11-23 | 天津杰泰高科传感技术有限公司 | Laser radar narrow-pulse generation circuit and method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2275775Y (en) * | 1996-12-13 | 1998-03-04 | 吴杨 | Touch time-delay switch |
| CN2914310Y (en) * | 2005-12-08 | 2007-06-20 | 武汉江北开关有限责任公司 | Intelligent combination switch |
| CN201263142Y (en) * | 2007-07-11 | 2009-06-24 | 南宁微控技术有限公司 | Silicon controlled combination switch with protection device |
-
2007
- 2007-07-11 CN CN200710049550A patent/CN101127443B/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157946A (en) * | 2011-04-01 | 2011-08-17 | 乐山一拉得电网自动化有限公司 | Stepper type trigger synchronous protection of combination switch and core unit thereof |
| CN102157946B (en) * | 2011-04-01 | 2012-11-21 | 乐山一拉得电网自动化有限公司 | Stepper type trigger synchronous protection of combination switch and core unit thereof |
| CN103066571A (en) * | 2012-12-21 | 2013-04-24 | 广西诺斯贝电气有限公司 | Overload protection method and device of combination switch |
| CN103066571B (en) * | 2012-12-21 | 2015-06-03 | 广西诺思贝电气股份有限公司 | Overload protection method and device of combination switch |
| CN104426150A (en) * | 2013-08-26 | 2015-03-18 | 深圳市华冠电气有限公司 | Single-phase heavy-current compound switch and control method thereof |
| CN104426150B (en) * | 2013-08-26 | 2016-11-30 | 深圳市华冠电气有限公司 | Single-phase big electric current combination switch and control method thereof |
| CN108872967A (en) * | 2018-05-15 | 2018-11-23 | 天津杰泰高科传感技术有限公司 | Laser radar narrow-pulse generation circuit and method |
| CN108562851A (en) * | 2018-06-13 | 2018-09-21 | 常州同惠电子股份有限公司 | A kind of switch detection protection circuit |
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| Publication number | Publication date |
|---|---|
| CN101127443B (en) | 2012-09-26 |
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| C56 | Change in the name or address of the patentee |
Owner name: GUANGXI NUOBEISI ELECTRIC COMPANY CO., LTD. Free format text: FORMER NAME: GUANGXI NORMSBAY ELECTRIC CO., LTD. |
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| CP01 | Change in the name or title of a patent holder |
Address after: 530001, No. 304-1, hope road, Nanning, the Guangxi Zhuang Autonomous Region Patentee after: The electric limited company of Guangxi Nuo Sibei Address before: 530001, No. 304-1, hope road, Nanning, the Guangxi Zhuang Autonomous Region Patentee before: Guangxi Normsbay Electrical Co., Ltd. |
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Granted publication date: 20120926 Termination date: 20160711 |