CN101127378A - Semiconductor luminescent part and its making method - Google Patents
Semiconductor luminescent part and its making method Download PDFInfo
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- CN101127378A CN101127378A CNA2006101108288A CN200610110828A CN101127378A CN 101127378 A CN101127378 A CN 101127378A CN A2006101108288 A CNA2006101108288 A CN A2006101108288A CN 200610110828 A CN200610110828 A CN 200610110828A CN 101127378 A CN101127378 A CN 101127378A
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Abstract
The utility model provides a semi-conductor luminous element with compound contact layer of II-V species (or II-IV-V species) and a producing method. According to the priority of the utility model, the concrete embodiment of the semi-conductor luminous element comprises a substrate, a first conductive semi-conductor material layer, a luminous layer, a first electrode, a second conductive semi-conductor material layer, a compound contact layer of II-V species (or II-IV-V species), a transparent conductive layer and a second electrode. The existence of the compound contact layer of II-V species (or II-IV-V species) improves the ohmic contact between the second conductive semi-conductor material layer and the transparent conductive layer.
Description
Technical field
The present invention relates to a kind of semiconductor light-emitting elements (Semiconductor light emitting device), particularly relate to the semiconductor light-emitting elements of a kind of II-V of having family (or II-IV-V family) compound contact layer.
Background technology
Light-emitting diode (Light emitting diodes) can be used in the device of broad variety, for example, and optical display, traffic sign, communication device and lighting device.Light-emitting diode is different from those light sources of knowing, and different industrial circles are had more applicability.
Compare the osram lamp of knowing, light-emitting diode consumes small electric power, and reaction is comparatively quick.Moreover, useful life, the harmful substance that does not have similar mercury, smaller volume and lower power consumption that light-emitting diode has better illumination efficient, grows.
The principle of luminosity of light-emitting diode is that when forward bias voltage drop, electronics in P type and the N type semiconductor and electric cave can be combined into photon to produce light in luminescent layer.Be difficult for because P type gallium nitride semiconductor mixes, P type gallium nitride semiconductor layers produces higher resistance with contacting of conductive layer.Therefore, it has reduced the usefulness of P type gallium nitride semiconductor.
Patent case number No. 459407 patents in Taiwan provide the solution that reduces the contact resistance of P type gallium nitride semiconductor layers and conductive layer.See also Fig. 1.Fig. 1 illustrates a kind of n+ of having type and oppositely wears the light emitting diode construction of satisfying layer.This light-emitting diode structure comprises that sapphire insulated substrate 11, gallium nitride resilient coating 12, n type gallium nitride contact layer 13, N type aluminium gallium nitride alloy bond course 14, InGaN luminescent layer 15, P type aluminium gallium nitride alloy bond course 16, P type gallium nitride contact layer 17, n+ type are oppositely worn and satisfies layer 18, transparency conducting layer 19, first electrode 21 and second electrode 22.
This gallium nitride resilient coating 12 is formed on this sapphire insulated substrate 11.N type gallium nitride contact layer 13 is formed on this gallium nitride resilient coating 12, causes this n type gallium nitride contact layer 13 of part to expose.This first electrode 21 is formed on this n type gallium nitride contact layer 13 that exposes.This N type aluminium gallium nitride alloy bond course 14 is formed on this n type gallium nitride contact layer 13.This InGaN luminescent layer 15 is formed on this N type aluminium gallium nitride alloy bond course 14.This P type aluminium gallium nitride alloy bond course 16 is formed on this InGaN luminescent layer 15.This P type gallium nitride contact layer 17 is formed on this P type aluminium gallium nitride alloy bond course 16.This n+ type is oppositely worn then, and layer 18 is formed on this P type gallium nitride contact layer 17.This transparency conducting layer 19 is formed on this n+ type and oppositely wears and satisfy on the layer 18, causes this n+ type of part oppositely to be worn to satisfy layer 18 to expose.This second electrode 22 is formed on this n+ type that exposes and oppositely wears and satisfy on the layer 18, and contacts with this transparency conducting layer 19.
This light-emitting diode, oppositely wear then by increase n+ type layer 18 has improved the ohmic contact between this P type gallium nitride contact layer 17 and this transparency conducting layer 19 between this P type gallium nitride contact layer 17 and this transparency conducting layer 19.
Yet this n+ type is oppositely worn and is satisfied layer 18 and have complicated manufacturing process, and control is difficult for, and causes the finished product stability of light-emitting diode not good.This n+ type is oppositely worn then, and layer 18 also has higher production cost.
Therefore, the semiconductor light-emitting elements that the purpose of this invention is to provide a kind of II-V of having family (or II-IV-V family) compound contact layer.This semiconductor light-emitting elements with II-V family (or II-IV-V family) compound contact layer can improve the ohmic contact between this P type gallium nitride contact layer and this transparency conducting layer.Moreover this semiconductor light-emitting elements with II-V family (or II-IV-V family) compound contact layer has easy manufacturing process, and has increased the stability of producing.So this semiconductor light-emitting elements with II-V family (or II-IV-V family) compound contact layer also has lower production cost.
Summary of the invention
The object of the present invention is to provide the semiconductor light-emitting elements of a kind of II-V of having family (or II-IV-V family) compound contact layer.This semiconductor light-emitting elements with II-V family (or II-IV-V family) compound contact layer can improve the ohmic contact between this P type gallium nitride contact layer and this transparency conducting layer.
A kind of semiconductor light-emitting elements of preferred specific embodiment comprises substrate (Substrate) according to the present invention, the first conductive type semiconductor material layer (Semiconductor material layer), luminescent layer (Light-emitting layer), first electrode (Electrode), the second conductive type semiconductor material layer, II-V compounds of group contact layer (II-V group compound contact layer), the transparency conducting layer (Transparent conductive layer) and second electrode.This first conductive type semiconductor material layer is formed on this substrate.This luminescent layer is formed on this first conductive type semiconductor material layer and causes the subregion of this first conductive type semiconductor material layer to be exposed.This first electrode is formed on this subregion of exposing of this first conductive type semiconductor material layer.This second conductive type semiconductor material layer is formed on this luminescent layer.This II-V compounds of group contact layer is formed on this second conductive type semiconductor material layer.This transparency conducting layer is formed on this II-V compounds of group contact layer and causes the subregion of this II-V compounds of group contact layer to be exposed.This second electrode is formed on this subregion of exposing of this II-V compounds of group contact layer and contacts this transparency conducting layer.
A kind of semiconductor light-emitting elements of another preferred specific embodiment is replaced as II-IV-V compounds of group contact layer by this above-mentioned II-V compounds of group contact layer and is constituted according to the present invention.
A kind of method of making semiconductor light-emitting elements of preferred specific embodiment according to the present invention, at first, prepared substrate.Secondly, the method according to this invention forms the first conductive type semiconductor material layer on this substrate.Then, the method according to this invention formation luminescent layer causes the subregion of this first conductive type semiconductor material layer to be exposed on this first conductive type semiconductor material layer.Subsequently, the method according to this invention forms first electrode on this subregion of exposing of this first conductive type semiconductor material layer.Secondly, the method according to this invention forms the second conductive type semiconductor material layer on this luminescent layer.Then, the method according to this invention forms II-V compounds of group contact layer on this second conductive type semiconductor material layer.Subsequently, the method according to this invention formation transparency conducting layer causes the subregion of this II-V compounds of group contact layer to be exposed on this II-V compounds of group contact layer.At last, form second electrode on this subregion of exposing of this II-V compounds of group contact layer and contact this transparency conducting layer.
A kind of method of making semiconductor light-emitting elements of another preferred specific embodiment according to the present invention, in above-mentioned steps, this II-V compounds of group contact layer is replaced as II-IV-V compounds of group contact layer.
Can be further understood by the following detailed description and accompanying drawings about the advantages and spirit of the present invention.
Description of drawings
Fig. 1 illustrates a kind of n+ of having type oppositely to wear the light emitting diode construction of satisfying layer.
The manufacturing that Fig. 2 A to Fig. 2 G illustrates the preferred specific embodiment according to the present invention has the method for the semiconductor light-emitting elements of II-V compounds of group contact layer.
Fig. 3 is that the LED with II-V compounds of group contact layer of the preferred specific embodiment according to the present invention carries out the figure line that current-voltage (I-V) test is drawn with the LED with II-V compounds of group contact layer.
The simple symbol explanation
11: sapphire insulated substrate 12: the gallium nitride resilient coating
13:N type gallium nitride contact layer 14:N type aluminium gallium nitride alloy bond course
15: InGaN luminescent layer 16:P type aluminium gallium nitride alloy bond course
17:P type gallium nitride contact layer 18:n+ type is oppositely worn and is satisfied layer
19: 21: the first electrodes of transparency conducting layer
Electrode 31 in 22: the second: substrate
32: the first conductive type semiconductor material layers 33: luminescent layer
34: the second conductive type semiconductor material layer 35:II-V compounds of group contact layers
36: 37: the first electrodes of transparency conducting layer
38: the second electrodes
Embodiment
See also Fig. 2 A to Fig. 2 G.Fig. 2 A to Fig. 2 G is the method that illustrates the manufacturing semiconductor light-emitting elements of the preferred specific embodiment according to the present invention.
At first, shown in Fig. 2 A, method according to an advantageous embodiment of the invention is a preparation substrate 31, and forms the first conductive type semiconductor material layer 32 on this substrate 31.
In specific embodiment, the material of this substrate 31 can be silicon (Si), gallium nitride (GaN), aluminium nitride (AlN), sapphire (Sapphire), spinelle (Spinnel), carborundum (SiC), GaAs (GaAs), alundum (Al (Al
2O
3), titanium dioxide lithium gallium (LiGaO
2), titanium dioxide lithium aluminium (LiAlO
2) or four magnesium oxide, two aluminium (MgAl
2O
4).
In specific embodiment, this first conductive type semiconductor material layer 32 is formed by gallium nitride (GaN) material.
In specific embodiment, this first conduction type is the N type.
Secondly, shown in Fig. 2 B, the method for preferred specific embodiment formation luminescent layer 33 causes the subregion of this first conductive type semiconductor material layer 32 to be exposed on this first conductive type semiconductor material layer 32 according to the present invention.
In specific embodiment, the material of this luminescent layer 33 can be InGaN (InGaN), aluminium gallium nitride alloy (AlGaN) or InGaAsP (InGaAs).
Subsequently, shown in Fig. 2 C, the method for preferred specific embodiment forms first electrode 37 on this subregion of exposing of this first conductive type semiconductor material layer 32 according to the present invention.
Then, shown in Fig. 2 D, the method for preferred specific embodiment forms the second conductive type semiconductor material layer 34 on this luminescent layer 33 according to the present invention.
In specific embodiment, this second conductive type semiconductor material layer 34 is formed by gallium nitride material.
In specific embodiment, this second conduction type is the P type.
Secondly, shown in Fig. 2 E, the method for preferred specific embodiment forms II-V compounds of group contact layer 35 on this second conductive type semiconductor material layer 34 according to the present invention.
In specific embodiment, the material list of this II-V compounds of group contact layer 35 is shown as chemical formula and is: M
xN
y, wherein 1≤x≤3,1≤y≤3, and x and y are molal quantity (Molar number).
In specific embodiment, II family chemical element in this II-V compounds of group contact layer 35 can be zinc (Zn), beryllium (Be), magnesium (Mg), calcium (Ga), strontium (Sr), barium (Ba) or radium (Ra), and the V family chemical element in this II-V compounds of group contact layer 35 can be nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb) or bismuth (Bi).
In specific embodiment, the thickness range of this II-V compounds of group contact layer 35 is to 500 dusts from 0.5 dust (Angstroms).
In specific embodiment, this II-V compounds of group contact layer 35 is forming in 400 ℃ to 1100 ℃ temperature range.
Subsequently, shown in Fig. 2 F, the method for preferred specific embodiment formation transparency conducting layer 36 causes the subregion of this II-V compounds of group contact layer 35 to be exposed on this II-V compounds of group contact layer according to the present invention.
In specific embodiment, the material of this transparency conducting layer 36 can be nickel/gold (Ni/Au), indium tin oxide (ITO), CTO, TiWn, indium sesquioxide (In
2O
3), tin ash (SnO
2), cadmium oxide (CdO), zinc oxide (ZnO), copper dioxide calcium (CuGaO
2) or strontium dioxide two bronze medal (SrCu
2O
2).
At last, shown in Fig. 2 G, the method for preferred specific embodiment forms second electrode 38 on this subregion of exposing of this II-V compounds of group contact layer 35 and contact this transparency conducting layer 36 according to the present invention.
A kind of method of making semiconductor light-emitting elements of another preferred specific embodiment according to the present invention, this II-V compounds of group contact layer is replaced as II-IV-V compounds of group contact layer in above-mentioned steps.For example, the material of this II-IV-V compounds of group contact layer can be two magnesium nitride silicon (MgSiN
2).
Please consult Fig. 2 G again.Fig. 2 G is the cross sectional view of the semiconductor light-emitting elements of preferred specific embodiment according to the present invention.
The semiconductor light-emitting elements of preferred specific embodiment comprises substrate 31, the first conductive type semiconductor material layer 32, luminescent layer 33, first electrode 37, the second conductive type semiconductor material layer 34, II-V compounds of group contact layer 35, transparency conducting layer 36 and second electrode 38 according to the present invention.
This first conductive type semiconductor material layer 32 is formed on this substrate 31.
In specific embodiment, the material of this substrate 31 can be silicon, gallium nitride, aluminium nitride, sapphire, spinelle, carborundum, GaAs, alundum (Al, titanium dioxide lithium gallium, titanium dioxide lithium aluminium or four magnesium oxide, two aluminium.
In specific embodiment, this first conductive type semiconductor material layer 32 is formed by gallium nitride material.
In specific embodiment, this first conduction type is the N type.
This luminescent layer 33 is formed on this first conductive type semiconductor material layer 32 and causes the subregion of this first conductive type semiconductor material layer 32 to be exposed.
In specific embodiment, the material of this luminescent layer 33 can be InGaN, aluminium gallium nitride alloy or InGaAsP.
This first electrode 37 is formed on this subregion of exposing of this first conductive type semiconductor material layer 32.
This second conductive type semiconductor material layer 34 is formed on this luminescent layer 33.
In specific embodiment, this second conductive type semiconductor material layer 34 is formed by gallium nitride material.
In specific embodiment, this second conduction type is the P type.
This II-V compounds of group contact layer 35 is formed on this second conductive type semiconductor material layer 34.
In specific embodiment, the material list of this II-V compounds of group contact layer 35 is shown as chemical formula and is: M
xN
y, wherein 1≤x≤3,1≤y≤3, and x and y are molal quantity.
In specific embodiment, the II family chemical element in this II-V compounds of group contact layer 35 can be zinc, beryllium, magnesium, calcium, strontium, barium or radium, and the V family chemical element in this II-V compounds of group contact layer 35 can be nitrogen, phosphorus, arsenic, antimony or bismuth.
In specific embodiment, the thickness range of this II-V compounds of group contact layer 35 is from 0.5 dust to 500 dust.
In specific embodiment, this II-V compounds of group contact layer 35 is forming in 400 ℃ to 1100 ℃ temperature range.
This transparency conducting layer 36 is formed on this II-V compounds of group contact layer 35 and causes the subregion of this II-V compounds of group contact layer 35 to be exposed.
In specific embodiment, the material of this transparency conducting layer 36 can be nickel/gold, indium tin oxide, CTO, TiWn, indium sesquioxide, tin ash, cadmium oxide, zinc oxide, copper dioxide calcium or strontium dioxide two bronze medals.
This second electrode 38 is formed on this subregion of exposing of this II-V compounds of group contact layer 35 and contacts this transparency conducting layer 36.
A kind of semiconductor light-emitting elements of another preferred specific embodiment according to the present invention, in said structure, this II-V compounds of group contact layer is replaced as II-IV-V compounds of group contact layer.For example, the material of this II-IV-V compounds of group contact layer can be two magnesium nitride silicon (MgSiN
2).
According to Ab initio band structurecalculations of Mg among the J.Phys:Condens.Matter 11 (1999)
3N
2And MgSiN
2Experimental result proof magnesium nitride (Mg in this piece paper
3N
2) energy gap (Energy gap) be about 2.8eV, and this two magnesium nitrides silicon (MgSiN
2) energy gap be about 4.8eV.This magnesium nitride and this two magnesium nitrides silicon bandgap width be near InGaN energy gap width, so help to reduce the resistance value between this P type gallium nitride contact layer and this transparency conducting layer.
See also Fig. 3, Fig. 3 is that the LED with II-V compounds of group contact layer of the preferred specific embodiment according to the present invention carries out the figure line that current-voltage (I-V) test is drawn with the LED with II-V compounds of group contact layer.This II-V compounds of group contact layer with LED of II-V compounds of group contact layer is formed by ammonia and reactive magnesium, and the material of this II-V compounds of group contact layer is magnesium nitride (Mg
3N
2).As shown in Figure 3, this LED with II-V compounds of group contact layer has lower resistance value than the LED that this does not have II-V compounds of group contact layer.In addition with regard to technological standpoint, sincere II-V compounds of group contact layer provided by the present invention is applicable to other mentioned semiconductor light-emitting elements in patent specification not.
Obvious ground, the semiconductor light-emitting elements with II-V family (or II-IV-V family) compound contact layer of preferred specific embodiment can improve the ohmic contact between this P type gallium nitride contact layer and this transparency conducting layer according to the present invention.Moreover, compare prior art, this semiconductor light-emitting elements with II-V family (or II-IV-V family) compound contact layer has easy manufacturing process, and has increased the stability of producing.So this semiconductor light-emitting elements with II-V family (or II-IV-V family) compound contact layer also has lower production cost.
By the detailed description of above preferred specific embodiment, hope can be known description feature of the present invention and spirit more, and is not to come scope of the present invention is limited with the above-mentioned preferred specific embodiment that is disclosed.On the contrary, its objective is that hope can contain in the scope of claim of being arranged in of various changes and tool equality institute of the present invention desire application.Therefore, the scope of the claim that the present invention applied for should be done the broadest explanation according to above-mentioned explanation, contains the arrangement of all possible change and tool equality to cause it.
Claims (40)
1. semiconductor light-emitting elements, this semiconductor light-emitting elements comprises:
Substrate;
The first conductive type semiconductor material layer, this first conductive type semiconductor material layer is formed on this substrate;
Luminescent layer, this luminescent layer are formed on this first conductive type semiconductor material layer and cause the subregion of this first conductive type semiconductor material layer to be exposed;
First electrode, this first electrode are formed on this subregion of exposing of this first conductive type semiconductor material layer;
The second conductive type semiconductor material layer, this second conductive type semiconductor material layer is formed on this luminescent layer;
II-V compounds of group contact layer, this II-V compounds of group contact layer are formed on this second conductive type semiconductor material layer;
Transparency conducting layer, this transparency conducting layer are formed on this II-V compounds of group contact layer and cause the subregion of this II-V compounds of group contact layer to be exposed; With
Second electrode, this second electrode are formed on this subregion of exposing of this II-V compounds of group contact layer and contact this transparency conducting layer.
2. semiconductor light-emitting elements as claimed in claim 1, wherein this substrate is formed by a kind of material that is selected from the group that is made up of silicon, gallium nitride, aluminium nitride, sapphire, spinelle, carborundum, GaAs, alundum (Al, titanium dioxide lithium gallium, titanium dioxide lithium aluminium and four magnesium oxide, two aluminium.
3. semiconductor light-emitting elements as claimed in claim 1, wherein this first conductive type semiconductor material layer and this second conductive type semiconductor material layer are formed by gallium nitride material respectively.
4. semiconductor light-emitting elements as claimed in claim 1, wherein this first conduction type is the N type, and this second conduction type is the P type.
5. semiconductor light-emitting elements as claimed in claim 1, wherein this luminescent layer is formed by a kind of material that is selected from the group that is made up of InGaN, aluminium gallium nitride alloy and InGaAsP.
6. semiconductor light-emitting elements as claimed in claim 1, wherein the II family chemical element in this II-V compounds of group contact layer is selected from a kind of element in the group that is made up of zinc, beryllium, magnesium, calcium, strontium, barium and radium, and the V family chemical element in this II-V compounds of group contact layer is selected from a kind of element in the group that is made up of nitrogen, phosphorus, arsenic, antimony and bismuth.
7. semiconductor light-emitting elements as claimed in claim 1, wherein the material list of this II-V compounds of group contact layer is shown as chemical formula and is: M
xN
y, wherein 1≤x≤3,1≤y≤3, and x and y are molal quantity.
8. semiconductor light-emitting elements as claimed in claim 1, wherein the thickness range of this II-V compounds of group contact layer is from 0.5 dust to 500 dust.
9. semiconductor light-emitting elements as claimed in claim 1, wherein this II-V compounds of group contact layer is forming in 400 ℃ to 1100 ℃ temperature range.
10. semiconductor light-emitting elements as claimed in claim 1, wherein this transparency conducting layer is formed by a kind of material that is selected from the group that is made up of nickel/gold, indium tin oxide, CTO, TiWn, indium sesquioxide, tin ash, cadmium oxide, zinc oxide, copper dioxide calcium and strontium dioxide two bronze medals.
11. a method of making semiconductor light-emitting elements, this method comprises the following steps:
Prepared substrate;
Form the first conductive type semiconductor material layer on this substrate;
Forming luminescent layer causes the subregion of this first conductive type semiconductor material layer to be exposed on this first conductive type semiconductor material layer;
Form first electrode on this subregion of exposing of this first conductive type semiconductor material layer;
Form the second conductive type semiconductor material layer on this luminescent layer;
Form II-V compounds of group contact layer on this second conductive type semiconductor material layer;
Forming transparency conducting layer causes the subregion of this II-V compounds of group contact layer to be exposed on this II-V compounds of group contact layer; And
Form second electrode on this subregion of exposing of this II-V compounds of group contact layer and contact this transparency conducting layer.
12. method as claimed in claim 11, wherein this substrate is formed by a kind of material that is selected from the group that is made up of silicon, gallium nitride, aluminium nitride, sapphire, spinelle, carborundum, GaAs, alundum (Al, titanium dioxide lithium gallium, titanium dioxide lithium aluminium and four magnesium oxide, two aluminium.
13. method as claimed in claim 11, wherein this first conductive type semiconductor material layer and this second conductive type semiconductor material layer are formed by gallium nitride material respectively.
14. method as claimed in claim 11, wherein this first conduction type is the N type, and this second conduction type is the P type.
15. method as claimed in claim 11, wherein this luminescent layer is formed by a kind of material that is selected from the group that is made up of InGaN, aluminium gallium nitride alloy and InGaAsP.
16. method as claimed in claim 11, wherein the II family chemical element in this II-V compounds of group contact layer is selected from a kind of element in the group that is made up of zinc, beryllium, magnesium, calcium, strontium, barium and radium, and the V family chemical element in this II-V compounds of group contact layer is selected from a kind of element in the group that is made up of nitrogen, phosphorus, arsenic, antimony and bismuth.
17. method as claimed in claim 11, wherein the material list of this II-V compounds of group contact layer is shown as chemical formula and is: M
xN
y, wherein 1≤x≤3,1≤y≤3, and x and y are molal quantity.
18. method as claimed in claim 11, wherein the thickness range of this II-V compounds of group contact layer is from 0.5 dust to 500 dust.
19. method as claimed in claim 11, wherein this II-V compounds of group contact layer is forming in 400 ℃ to 1100 ℃ temperature range.
20. method as claimed in claim 11, wherein this transparency conducting layer is formed by a kind of material that is selected from the group that is made up of nickel/gold, indium tin oxide, CTO, TiWn, indium sesquioxide, tin ash, cadmium oxide, zinc oxide, copper dioxide calcium and strontium dioxide two bronze medals.
21. a semiconductor light-emitting elements, this semiconductor light-emitting elements comprises:
Substrate;
The first conductive type semiconductor material layer, this first conductive type semiconductor material layer is formed on this substrate;
Luminescent layer, this luminescent layer are formed on this first conductive type semiconductor material layer and cause the subregion of this first conductive type semiconductor material layer to be exposed;
First electrode, this first electrode are formed on this subregion of exposing of this first conductive type semiconductor material layer;
The second conductive type semiconductor material layer, this second conductive type semiconductor material layer is formed on this luminescent layer;
II-IV-V compounds of group contact layer, this II-IV-V compounds of group contact layer are formed on this second conductive type semiconductor material layer;
Transparency conducting layer, this transparency conducting layer are formed on this II-IV-V compounds of group contact layer and cause the subregion of this II-IV-V compounds of group contact layer to be exposed; With
Second electrode, this second electrode are formed on this subregion of exposing of this II-IV-V compounds of group contact layer and contact this transparency conducting layer.
22. semiconductor light-emitting elements as claimed in claim 21, wherein this substrate is formed by a kind of material that is selected from the group that is made up of silicon, gallium nitride, aluminium nitride, sapphire, spinelle, carborundum, GaAs, alundum (Al, titanium dioxide lithium gallium, titanium dioxide lithium aluminium and four magnesium oxide, two aluminium.
23. semiconductor light-emitting elements as claimed in claim 21, wherein this first conductive type semiconductor material layer and this second conductive type semiconductor material layer are formed by gallium nitride material respectively.
24. semiconductor light-emitting elements as claimed in claim 21, wherein this first conduction type is the N type, and this second conduction type is the P type.
25. semiconductor light-emitting elements as claimed in claim 21, wherein this luminescent layer is formed by a kind of material that is selected from the group that is made up of InGaN, aluminium gallium nitride alloy and InGaAsP.
26. semiconductor light-emitting elements as claimed in claim 21, wherein the II family chemical element in this II-IV-V compounds of group contact layer is selected from a kind of element in the group that is made up of zinc, beryllium, magnesium, calcium, strontium, barium and radium, IV family chemical element in this II-IV-V compounds of group contact layer selects a kind of element in free carbon, silicon, germanium, tin and the plumbous group that is formed, and the V family chemical element in this II-IV-V compounds of group contact layer is selected from a kind of element in the group that is made up of nitrogen, phosphorus, arsenic, antimony and bismuth.
27. semiconductor light-emitting elements as claimed in claim 21, wherein the material list of this II-IV-V compounds of group contact layer is shown as chemical formula and is: M
xN
yO
z, wherein 1≤x≤3,1≤y≤3,1≤z≤3 and x, y and z are molal quantity.
28. semiconductor light-emitting elements as claimed in claim 21, wherein the thickness range of this II-IV-V compounds of group contact layer is from 0.5 dust to 500 dust.
29. semiconductor light-emitting elements as claimed in claim 21, wherein this II-IV-V compounds of group contact layer is forming in 400 ℃ to 1100 ℃ temperature range.
30. semiconductor light-emitting elements as claimed in claim 21, wherein this transparency conducting layer is formed by a kind of material that is selected from the group that is made up of nickel/gold, indium tin oxide, CTO, TiWn, indium sesquioxide, tin ash, cadmium oxide, zinc oxide, copper dioxide calcium and strontium dioxide two bronze medals.
31. a method of making semiconductor light-emitting elements, this method comprises the following steps:
Prepared substrate;
Form the first conductive type semiconductor material layer on this substrate;
Forming luminescent layer causes the subregion of this first conductive type semiconductor material layer to be exposed on this first conductive type semiconductor material layer;
Form first electrode on this subregion of exposing of this first conductive type semiconductor material layer;
Form the second conductive type semiconductor material layer on this luminescent layer;
Form II-IV-V compounds of group contact layer on this second conductive type semiconductor material layer;
Forming transparency conducting layer causes the subregion of this II-IV-V compounds of group contact layer to be exposed on this II-IV-V compounds of group contact layer; And
Form second electrode on this subregion of exposing of this II-IV-V compounds of group contact layer and contact this transparency conducting layer.
32. semiconductor light-emitting elements as claimed in claim 31, wherein this substrate is formed by a kind of material that is selected from the group that is made up of silicon, gallium nitride, aluminium nitride, sapphire, spinelle, carborundum, GaAs, alundum (Al, titanium dioxide lithium gallium, titanium dioxide lithium aluminium and four magnesium oxide, two aluminium.
33. semiconductor light-emitting elements as claimed in claim 31, wherein this first conductive type semiconductor material layer and this second conductive type semiconductor material layer are formed by gallium nitride material respectively.
34. semiconductor light-emitting elements as claimed in claim 31, wherein this first conduction type is the N type, and this second conduction type is the P type.
35. semiconductor light-emitting elements as claimed in claim 31, wherein this luminescent layer is formed by a kind of material that is selected from the group that is made up of InGaN, aluminium gallium nitride alloy and InGaAsP.
36. semiconductor light-emitting elements as claimed in claim 31, wherein the II family chemical element in this II-IV-V compounds of group contact layer is selected from a kind of element in the group that is made up of zinc, beryllium, magnesium, calcium, strontium, barium and radium, IV family chemical element in this II-IV-V compounds of group contact layer selects a kind of element in free carbon, silicon, germanium, tin and the plumbous group that is formed, and the V family chemical element in this II-IV-V compounds of group contact layer is selected from a kind of element in the group that is made up of nitrogen, phosphorus, arsenic, antimony and bismuth.
37. semiconductor light-emitting elements as claimed in claim 31, wherein the material list of this II-IV-V compounds of group contact layer is shown as chemical formula and is: M
xN
yO
z, wherein 1≤x≤3,1≤y≤3,1≤z≤3 and x, y and z are molal quantity.
38. semiconductor light-emitting elements as claimed in claim 31, wherein the thickness range of this II-IV-V compounds of group contact layer is from 0.5 dust to 500 dust.
39. semiconductor light-emitting elements as claimed in claim 31, wherein this II-IV-V compounds of group contact layer is forming in 400 ℃ to 1100 ℃ temperature range.
40. semiconductor light-emitting elements as claimed in claim 31, wherein this transparency conducting layer is formed by a kind of material that is selected from the group that is made up of nickel/gold, indium tin oxide, CTO, TiWn, indium sesquioxide, tin ash, cadmium oxide, zinc oxide, copper dioxide calcium and strontium dioxide two bronze medals.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101108288A CN100527456C (en) | 2006-08-15 | 2006-08-15 | Semiconductor luminescent part and its making method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101108288A CN100527456C (en) | 2006-08-15 | 2006-08-15 | Semiconductor luminescent part and its making method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102947246A (en) * | 2010-06-22 | 2013-02-27 | 住友电气工业株式会社 | Substrate, method for producing substrate, and light emitting element |
| CN112881485A (en) * | 2021-01-14 | 2021-06-01 | 西安电子科技大学 | GaN sensor for detecting hypochlorite and detection method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102947246A (en) * | 2010-06-22 | 2013-02-27 | 住友电气工业株式会社 | Substrate, method for producing substrate, and light emitting element |
| CN102947246B (en) * | 2010-06-22 | 2015-11-25 | 住友电气工业株式会社 | The manufacture method of substrate, substrate and luminous element |
| TWI510449B (en) * | 2010-06-22 | 2015-12-01 | Sumitomo Electric Industries | Manufacturing method of light emitting element |
| CN112881485A (en) * | 2021-01-14 | 2021-06-01 | 西安电子科技大学 | GaN sensor for detecting hypochlorite and detection method |
| CN112881485B (en) * | 2021-01-14 | 2021-12-17 | 西安电子科技大学 | GaN sensor for detecting hypochlorite and detection method |
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| CN100527456C (en) | 2009-08-12 |
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