CN101127323A - Image sensing part and its making method - Google Patents
Image sensing part and its making method Download PDFInfo
- Publication number
- CN101127323A CN101127323A CNA2006101108292A CN200610110829A CN101127323A CN 101127323 A CN101127323 A CN 101127323A CN A2006101108292 A CNA2006101108292 A CN A2006101108292A CN 200610110829 A CN200610110829 A CN 200610110829A CN 101127323 A CN101127323 A CN 101127323A
- Authority
- CN
- China
- Prior art keywords
- layer
- sensing element
- image sensing
- semiconductor
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
The utility model provides an image sensing element and a producing method. The method is characterized in that a flat layer forms on a semi-conductor base which comprises an pixel array area, an optical black area and a logical area, and an optical sensing element array in the pixel array area is covered. Besides, the method is also characterized in that a patterned metal layer forms in the area which corresponds to the pixel array area and the logical area on the flat layer, but the patterned metal layer can not form above the optical black area. The optical black layer in the optical black area forms in the condition that the temperature is below 400 DEG C before the form of the protective layer and after the form of the colored filter array. Besides, the optical black layer is made of metal material in priority.
Description
Technical field
The present invention relates to a kind of image sensor and method for making thereof, relate in particular to a kind of CMOS transistor image sensor and method for making thereof.
Background technology
CMOS transistor image sensor (CMOS image sensor, CIS) and charge coupled device (charge-coupled devices, CCDs) all be the optical circuit elements that is commonly used to light is converted to electronic signal in the prior art, both ranges of application are all very extensive, include scanner, video camera and camera or the like, but because charge coupled device is subject to the high and bulky problem of price, so comparatively universal with the CMOS transistor image sensor on the market at present.
Because the CMOS transistor image sensor is to make with traditional semiconductor technology, therefore can significantly reduce required cost and component size, and its range of application comprises digital and electronic commodity such as PC camera and digital camera, the CMOS transistor image sensor roughly is divided into line style at present, two kinds on face type, and line style CMOS transistor image sensor to be to be applied in products such as scanner, and face type CMOS transistor image sensor is then to be applied in products such as digital camera.
Please refer to Fig. 1, Fig. 1 is the generalized section of existing CMOS transistor (CMOS) image sensor (image sensor) 100.As shown in Figure 1, image sensor 100 comprises a pixel array region 102, an optical black area (optical black region) 104, reaches a logic area 106, is made in respectively in the semiconductor substrate 110.The semiconductor-based end 110, comprise a plurality of shallow isolating trough (shallow trench isolation) 112 and a plurality of light sensitive diode 114, and each light sensitive diode 114 links to each other with at least one corresponding metal oxide semiconductor transistor (not shown) electricity.Shallow isolating trough 112 is intended for the insulator (insulator) between the wantonly two adjacent light sensitive diodes 114.
One planarization layer 116 is formed at at semiconductor-based the end 110, to cover light sensitive diode 114 and shallow isolating trough 112, then forms patterned metal layer 118,120 on planarization layer 116, reaches 122.On patterned metal layer, form planarization layer 124, planarization layer 124 can be sandwich construction, and for example the silicon oxide layer that is made by high-density plasma (high density plasma) method (being called for short the HDP layer) is formed with the silicon oxide layer that utilizes the plasma enhanced chemical vapor deposition method to be made by the ethyl orthosilicate (being called for short PETEOS layer (plasma enhanced tetraethyl ortho silicate layer)) institute.On planarization layer 124, form protective layer (passivation layer) 130 again, and deposition top oxide layer 132, enter in the element region to prevent water gas.
Then, by a plurality of redness, green, blueness (R/G/B) colour filter array that filter pattern constitutes (color filter array, CFA) 134 top oxide layer 132 tops that are positioned at pixel array region 102.One black layer 136 is positioned at top oxide layer 132 tops of optical black area 104.And between reaching on CFA and the black layer, form flatness layer 138.And have a plurality of lenticules (microlens) 140 in planarization layer 138 tops.One top oxide layer 142 is positioned at the top, protection lenticule 140.122 of metal levels that are positioned at logic area 106 are exposed to the outside, as the continuous joint sheet of electricity.
But; existing CMOS transistor image sensor after the protective layer 130 that completes, often makes to have many dangling bonds (dangling bond) on the light sensitive diode surface during fabrication; and generation leakage current, that is the problem of dark current.Existing settling mode is a mode of utilizing hydrogen annealing (annealing), annealing steps 131 as shown in Figure 2, and the surface and the dangling bonds that make hydrogen atom move to light sensitive diode react, with the passivation dangling bonds.But owing to have the patterned metal layer 120 that shading is used, its metal meeting and hydrogen reaction hinder the passivation of dangling bonds.Therefore, still can produce many dark current.
Therefore, still need a kind of structure of image sensing element of novelty and method for making to solve the problem of dark current.
Summary of the invention
A purpose of the present invention provides a kind of method of making image sensing element, making the image sensing element of the dark current with improvement, and still has good shaded effect at optical black area.
Another object of the present invention provides a kind of image sensing element, and it has lower dark current, and still can have good shaded effect at optical black area.
Method according to manufacturing image sensing element of the present invention comprises the following steps.At first, provide the semiconductor substrate.The semiconductor-based end, includes a pel array (pixel array) district, a logic area, reaches an optical black area between pixel array region and logic area.Pixel array region comprises that a light sensing unit array (photo sensing unit array) and a plurality of isolated area are to isolate each light sensing unit.Then, on the semiconductor-based end, form one first planarization layer (planarized layer), cover the light sensing unit array.On first planarization layer that is positioned at pixel array region and logic area, form a patterned metal layer.On the semiconductor-based end, form one second planarization layer, and the second planarization layer overlay pattern metal level.In being lower than under 400 ℃, on second planarization layer that is positioned at optical black area, form the black layer of an optics.On second planarization layer that is positioned at pixel array region, form a colour filter array.On black layer of optics and colour filter array, form one the 3rd flatness layer.Form a plurality of lenticules (microlens) on the 3rd flatness layer, wherein lenticule is to be arranged at corresponding colour filter array top.At last, remove each layer of the metal level top that is positioned at logic area, the metal level that is positioned at logic area with exposure is with as joint sheet.
According to image sensing element of the present invention, comprise semiconductor substrate, a pixel array region, a logic area, reach an optical black area.Pixel array region is to be positioned at at semiconductor-based the end, and it comprises a light sensing unit array.Logic area is to be positioned at at semiconductor-based the end, and it comprises peripheral circuit.Optical black area is between suprabasil pixel array region of semiconductor and logic area, it comprises that a light sensing unit is positioned at at semiconductor-based the end, one first planarization layer is positioned on the light sensing unit, one second planarization layer is positioned on first planarization layer, and the black layer of an optics is positioned on second planarization layer.
Method according to manufacturing image sensing element of the present invention; do not form as the employed shading metal level of prior art in optical black area; but after forming protective layer and before the formation colour filter array, form an optics that contains metal and deceive layer, have good shaded effect.Therefore in the technology of annealing with the passivation dangling bonds, owing to there is not the obstruction of existing shading metal level, can make the dangling bonds passivation of optical black area more, and, can under lower temperature, deceive layer after this, to make the image sensing element of dark current with improvement with the material optics that comprises metal.
Description of drawings
Fig. 1 is the generalized section of existing C MOS image sensor;
Fig. 2 shows the hydrogen annealing method of prior art;
Fig. 3 shows according to image sensing element of the present invention;
Fig. 4 to Fig. 9 shows the method for making according to image sensing element of the present invention;
Figure 10 to Figure 21 shows dark current measurement existing and according to each position on the image sensing element of the present invention.
The main element symbol description
100 existing C MOS image sensors
200 according to image sensing element of the present invention
102,202 pixel array regions
104,204 optical black areas
106,206 logic areas
110, the 210 semiconductor-based ends
112 shallow isolating trough
114 light sensitive diodes
116,216 planarization layers
118,120,122,218,222 patterned metal layers
124,224 planarization layers
126,226 HDP layers
128,228 PETEOS layers
130,230 protective layers
131 annealing steps
132,142,242,244 top oxide layers
134,234 colour filter arrays
136, the black layer of 236 optics
138,238 planarization layers
140,240 lenticules
212,213 isolated areas
214 light sensing unit arrays
215 light sensing units
231 hydrogen annealings
232 oxide layers
Embodiment
See also Fig. 3, Fig. 3 shows according to image sensing element 200 of the present invention.Image sensing element 200 comprises semiconductor substrate 210, a pixel array region 202, a logic area 206, reaches an optical black area 204.Pixel array region 202 is to be positioned at at semiconductor-based the end 210, comprises a light sensing unit array 214.Logic area 206 is to be positioned at at semiconductor-based the end 210, comprises peripheral circuit.Optical black area 204 is between suprabasil pixel array region 202 of semiconductor and logic area 206, comprise that a light sensing unit 215 is positioned at at semiconductor-based the end 210, one first planarization layer 216 is positioned on the light sensing unit 215, one second planarization layer 224 is positioned on first planarization layer 216, and the black layer 236 of an optics be positioned on second planarization layer 224.
It should be noted that the black layer 236 of optics comprises a metal level that makes under low temperature (for example less than 400 ℃).This metal level can comprise titanium, or the combination of titanium and titanium nitride.
Light sensing unit array 214 can comprise light sensitive diode, and it is electrically connected with at least one corresponding metal oxide semiconductor transistor.Pixel array region 202 can comprise that still a plurality of isolated areas 212 are to isolate each light sensing unit except comprising light sensing unit array 214; One planarization layer (can be above-mentioned first planarization layer 216) is covered on light sensing unit array 214 and a plurality of isolated area 212; One patterned metal layer 218 is positioned on the planarization layer as light shield layer, in order to shading; Another planarization layer overlay pattern metal level 218, this planarization layer can be sandwich construction (can be for example above-mentioned second planarization layer 224); One colour filter array 234 is positioned on this planarization layer corresponding to light sensing unit array 214; And a microlens array 240 is positioned at colour filter array 234 tops.
See also Fig. 4 to Fig. 9, can make by following method according to image sensing element 200 of the present invention.At first, see also Fig. 4, semiconductor substrate 210 is provided, the semiconductor-based end 210, has a pixel array region 202, a logic area 206, reaches an optical black area 204 between pixel array region and logic area.Pixel array region 202 comprises that a light sensing unit array 214 and a plurality of isolated area 212 are to isolate each light sensing unit.Be positioned at at the semiconductor-based end 210 of optical black area 204 and have a light sensing unit 215.Has a separator 213 at the semiconductor-based end of logic area 206.On the semiconductor-based end 210, form a planarization layer 216 (planarized layer), cover each light sensing unit.Planarization layer can form a dielectric layer by deposition process, utilizes for example chemico-mechanical polishing again, carries out planarization and makes.
Then, see also Fig. 5, on the planarization layer 216 that is positioned at pixel array region 202 and logic area 206, form a patterned metal layer 218 and 222.Patterned metal layer 218 is as light shield layer.Patterned metal layer 222 is as joint sheet. Patterned metal layer 218 and 222 can form a metal level by sputter, utilizes etching to form required pattern again.
See also Fig. 6, on the semiconductor-based end 210, form a planarization layer 224, its overlay pattern metal level 218 and 222 again.Planarization layer is a dielectric material, can be the one layer or more structure, for example is made up of HDP layer 226 and 228 on PETEOS layer, again with the top surface planarization of PETEOS layer 228, and forms planarization layer.Can further on planarization layer 224, form a protective layer 230, for example plasma enhanced silicon nitride (PE-SiN) layer.
Then, see also Fig. 7,, on the light sensitive diode surface of light sensing unit 214 and 215, easily have dangling bonds (dangling bond) to produce through these technologies, for example-Si-,-Si-O-.Dangling bonds can impel the generation of dark current, influences the sensing of light quantity, that is influences the sensing sensitivity of light sensitive diode.Therefore, can carry out a hydrogen annealing 231, or use the material of other hydrogen atoms such as diamine, hydrogen molecule or atom be mixed incorporate into planarization layer to arrive on the light sensitive diode surface and the dangling bonds reaction, and with the dangling bonds passivation.It should be noted that, in prior art, find, when annealing, because there has been a sheet of metal light shield layer in optical black area, the hydrogen atom of part or hydrogen molecule may with metal reaction, and the hydrogen molecule or the hydrogen atom that hinder this part advance to the more light sensitive diode surface of lower floor, therefore, prepared light sensing apparatus still has high dark current value in optical black area.This phenomenon can obtain obvious improvement in the present invention, this is because when annealing, on the light sensing unit of optical black area, there is no the metal light shield layer and exist, therefore do not have metal and hydrogen molecule or hydrogen atom and react and hinder its situation that marches to light sensitive diode surface generation.Therefore, the passivation of dangling bonds is more complete, and can improve the problem of dark current.
See also Fig. 8, after annealing, can be further on protective layer 230, form an oxide layer 232, plasma enhanced oxide layer for example, with restoration and protection layer 230 surface chemical structure, but oxide layer 232 and nonessential.Then, on oxide layer 232, be positioned at the optical black area part, form the black layer 236 of an optics.The black layer 236 of optics can be by in the temperature that is lower than above-mentioned annealing process, for example under 400 ℃ the temperature, carry out metal sputtering and form, that is formation low-temperature metal layer, can be under low temperature sputter and form the metal material of film all can be as the black layer of optics of the present invention, for example combination of titanium or titanium and titanium nitride.Then, can on the semiconductor-based end 210, form a top oxide layer 244, cover the black layer 236 of optics.Top oxide layer 244 is formed down in low temperature, can be the oxide layer that plasma strengthens, can repair surface impaired behind the sputter of last technology and protective effect is provided.
Then, see also Fig. 9, in planarization layer 224 that is positioned at pixel array region or the last colour filter array 234 that forms of top oxide layer 244 (if the words of formation are arranged), that is, form red filter array, green filter array and blue filter array in regular turn in corresponding light sensitive diode top.Then form a planarization layer 238 in colour filter array 234 and the black layer of part optics top.In corresponding colour filter array 234 parts of planarization layer 238 tops, form a plurality of lenticules (microlens) then.Forming lenticular mode can be by forming a polymeric layer (not shown) that is made of acryl material (acrylate material), carries out an exposure, development and hot reflux (reflow) technology again and forms.Can further form a flatness layer on optical black area and colour filter array, for example the top oxide layer 242, with the protection as the surface.
At last; can utilize engraving method for example to remove each layer of patterned metal layer 222 tops of logic area 206; promptly; planarization layer 224, protective layer 230, oxide layer 232, and top oxide layer 244 and 242; to expose patterned metal layer 222; the usefulness of power supply connection is made and finish according to image sensing element of the present invention.
Perhaps, remove the step of each layer of patterned metal layer 222 tops of logic area 206, can after planarization layer 224 or protective layer 230 form, be undertaken, remove planarization layer 224 and protective layer 230 by for example photomask and engraving method.After last top oxide layer 242 forms, remove each layer of patterned metal layer 222 tops again, make it to be exposed to the outside.
It should be noted that each step after the annealing passivation dangling bonds technology, being preferable over than annealing temperature is to carry out under the low temperature, for example is lower than 400 ℃ temperature, the effect of passivation dangling bonds before so not destroying.
The image sensing element that makes according to method of the present invention has relatively low dark current.See also Figure 10 to Figure 21, the dark current measurement at each position on its display image sensing element, ordinate is the amount of dark current, and (e/s) represents with the per second electron number, and abscissa is the line number of image sensing element.
Figure 10 to Figure 13 shows optical black area, and the dark current measurement of the optical black area in the image sensing element lower right corner of optical black area, the pixel array region lower end of pixel array region, the pixel array region right-hand member of the image sensing element of prior art gained respectively.This image sensing element uses the metal light shield layer in optical black area, and when making, after forming the metal light shield layer, just carry out hydrogen annealing (hydrogen: nitrogen=0.8: 20 (flow-rate ratio)), with the elimination dangling bonds.The curve of Figure 10 and Figure 12 is obvious perk in both sides, and the dark current that is presented at the edge is big, and the curve display of Figure 11 to Figure 13 is very big in the value of the dark current that optical black area records, and the dark current value of pixel array region and optical black area differs greatly.
Figure 14 to Figure 17 shows optical black area, and the dark current measurement of the optical black area in the image sensing element lower right corner of optical black area, the pixel array region lower end of pixel array region, the pixel array region right-hand member of the image sensing element of prior art gained respectively.This image sensing element uses the metal light shield layer in optical black area, and when making, after forming the metal light shield layer, just carry out hydrogen annealing (use higher density of hydrogen, hydrogen: nitrogen=2: 20 (flow-rate ratio)), with the elimination dangling bonds.The curve of Figure 14 and Figure 16 still has perk in both sides, the dark current that is presented at the edge is still bigger, the value of the dark current that the curve display of Figure 15 and Figure 17 records in optical black area is still about 2000 to 4000e/s more than, and the dark current value of pixel array region and optical black area differs greatly.
Figure 18 to Figure 21 shows respectively according to the optical black area of the optical black area of the pixel array region of the image sensing element of gained of the present invention, pixel array region right-hand member, pixel array region lower end, and the dark current measurement of the optical black area in the image sensing element lower right corner.In optical black area, when making, carry out hydrogen annealing (hydrogen: during nitrogen=2: 20 (flow-rate ratio)) with the elimination dangling bonds, do not have the metal light shield layer, therefore can remove more dangling bonds according to image sensing element of the present invention.Show among the figure that the dark current that records is little than prior art obviously.The curve of Figure 18 and Figure 20 has not had tangible perk in two ends, show that the dark current dark current inner with it of edge there is no significant difference.And shown in Figure 19 to 21, the value of the dark current that records in optical black area has been reduced to about 1000 to about 2000e/s, and the dark current value of pixel array region and optical black area differ minimizing.The dark current that can have improvement as can be known according to the prepared image sensing element of method of the present invention.
The above only is the preferred embodiments of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (21)
1. method of making image sensing element comprises:
The semiconductor-based end, be provided, this semiconductor-based end include pixel array region, logic area, and optical black area between this pixel array region and this logic area, this pixel array region comprises that light sensing unit array and a plurality of isolated area are to isolate each light sensing unit;
On this semiconductor-based end, form first planarization layer, cover this light sensing unit array;
On this first planarization layer that is positioned at this pixel array region and this logic area, form patterned metal layer;
On this semiconductor-based end, form second planarization layer, and this second planarization layer covers this patterned metal layer;
In being lower than under 400 ℃, on this second planarization layer that is positioned at this optical black area, form the black layer of optics;
On this second planarization layer that is positioned at this pixel array region, form colour filter array;
On the black layer of this optics and this colour filter array, form the 3rd flatness layer;
Form a plurality of lenticules on the 3rd flatness layer, wherein this lenticule is to be arranged at corresponding this colour filter array top; And
Remove each layer of this patterned metal layer top that is positioned at this logic area, this patterned metal layer that is positioned at this logic area with exposure is with as joint sheet.
2. the method for manufacturing image sensing element as claimed in claim 1, after forming a plurality of lenticules, and remove before each layer of this patterned metal layer top that is positioned at this logic area, further be included in and form first cap layer on this semiconductor-based end, and make this first cap layer cover the step of those lenticules and the 3rd flatness layer.
3. the method for manufacturing image sensing element as claimed in claim 1, wherein this pixel array region comprises a plurality of light sensitive diodes, and after forming this second planarization layer and before the black layer of this optics of formation, further comprise the step of the surface of those light sensitive diodes being carried out the dangling bonds passivation technology.
4. the method for manufacturing image sensing element as claimed in claim 3, wherein this dangling bonds passivation technology is to make the lip-deep dangling bonds reaction of hydrogen or diamine and this light sensitive diode.
5. the method for manufacturing image sensing element as claimed in claim 1, wherein this second planarization layer comprises the one layer or more dielectric layer.
6. the method for manufacturing image sensing element as claimed in claim 1, wherein this second planarization layer comprises that one layer or more dielectric layer and protective layer are positioned on this one layer or more dielectric layer.
7. the method for manufacturing image sensing element as claimed in claim 3, wherein this second planarization layer comprises that one layer or more dielectric layer and protective layer are positioned on this one layer or more dielectric layer.
8. the method for manufacturing image sensing element as claimed in claim 1, wherein the black layer of this optics is to make by the low temperature jet-plating metallization.
9. the method for manufacturing image sensing element as claimed in claim 1, wherein the black layer of this optics is to make by low temperature sputter titanium/titanium nitride.
10. the method for manufacturing image sensing element as claimed in claim 1 after forming the black layer of this optics, further is included in and forms second cap layer on this semiconductor-based end to cover the step of the black layer of this optics.
11. the method for manufacturing image sensing element as claimed in claim 7 after carrying out this dangling bonds passivation technology, further is included in and forms the 3rd cap layer on this semiconductor-based end to cover the step of this protective layer.
12. the method for manufacturing image sensing element as claimed in claim 1, wherein remove each layer of this patterned metal layer top that is positioned at this logic area, this patterned metal layer that is positioned at this logic area with exposure is to carry out after forming this second planarization layer with the step as joint sheet.
13. an image sensing element comprises:
The semiconductor-based end;
Pixel array region was positioned on this semiconductor-based end, and it comprises the light sensing unit array;
Logic area was positioned on this semiconductor-based end, and it comprises peripheral circuit; And
Optical black area, between suprabasil this pixel array region of this semiconductor and this logic area, this optical black area comprises that light sensing unit was positioned on this semiconductor-based end, first planarization layer is positioned on this light sensing unit, second planarization layer is positioned on this first planarization layer, and the black layer of optics is positioned on this second planarization layer.
14. image sensing element as claimed in claim 13, wherein the black layer of this optics is included in and is lower than the metal level that makes under 400 ℃.
15. image sensing element as claimed in claim 14, wherein this metal level comprises titanium.
16. image sensing element as claimed in claim 14, wherein this metal level comprises titanium and titanium nitride.
17. image sensing element as claimed in claim 13, wherein this light sensing unit array comprises a plurality of light sensitive diodes.
18. image sensing element as claimed in claim 13 further comprises colour filter array in pixel array region, the corresponding top that is positioned at this light sensing unit array.
19. image sensing element as claimed in claim 13, wherein this second planarization layer comprises multilayer dielectric layer.
20. image sensing element as claimed in claim 13 comprises that further protective layer is on this second planarization layer.
21. image sensing element as claimed in claim 13 comprises that further the top oxide layer is on the black layer of this optics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006101108292A CN101127323B (en) | 2006-08-15 | 2006-08-15 | Image sensing part and its making method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006101108292A CN101127323B (en) | 2006-08-15 | 2006-08-15 | Image sensing part and its making method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101127323A true CN101127323A (en) | 2008-02-20 |
| CN101127323B CN101127323B (en) | 2011-06-22 |
Family
ID=39095304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006101108292A Active CN101127323B (en) | 2006-08-15 | 2006-08-15 | Image sensing part and its making method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101127323B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102194844A (en) * | 2010-03-17 | 2011-09-21 | 佳能株式会社 | Solid-state image sensor |
| CN103107175A (en) * | 2011-11-14 | 2013-05-15 | 台湾积体电路制造股份有限公司 | Image sensor with improved dark current performance |
| CN107005640A (en) * | 2014-12-04 | 2017-08-01 | 汤姆逊许可公司 | Image sensor cell and imaging device |
| CN109755262A (en) * | 2017-11-01 | 2019-05-14 | 中芯长电半导体（江阴）有限公司 | A kind of encapsulating structure and packaging method |
| CN110544700A (en) * | 2019-08-19 | 2019-12-06 | 上海集成电路研发中心有限公司 | Micro-lens array integrated in image sensor and preparation method thereof |
| CN111968996A (en) * | 2020-07-29 | 2020-11-20 | 上海集成电路研发中心有限公司 | Method for improving abnormal wire drawing in micro-lens process |
-
2006
- 2006-08-15 CN CN2006101108292A patent/CN101127323B/en active Active
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102194844A (en) * | 2010-03-17 | 2011-09-21 | 佳能株式会社 | Solid-state image sensor |
| US9024405B2 (en) | 2010-03-17 | 2015-05-05 | Canon Kabushiki Kaisha | Solid-state image sensor |
| CN103107175A (en) * | 2011-11-14 | 2013-05-15 | 台湾积体电路制造股份有限公司 | Image sensor with improved dark current performance |
| CN103107175B (en) * | 2011-11-14 | 2015-10-28 | 台湾积体电路制造股份有限公司 | There is the imageing sensor of the dark current performance of improvement |
| CN107005640A (en) * | 2014-12-04 | 2017-08-01 | 汤姆逊许可公司 | Image sensor cell and imaging device |
| CN107005640B (en) * | 2014-12-04 | 2020-06-26 | 交互数字Ce专利控股公司 | Image sensor unit and imaging device |
| CN109755262A (en) * | 2017-11-01 | 2019-05-14 | 中芯长电半导体（江阴）有限公司 | A kind of encapsulating structure and packaging method |
| CN110544700A (en) * | 2019-08-19 | 2019-12-06 | 上海集成电路研发中心有限公司 | Micro-lens array integrated in image sensor and preparation method thereof |
| CN110544700B (en) * | 2019-08-19 | 2022-01-04 | 上海集成电路研发中心有限公司 | Micro-lens array integrated in image sensor and preparation method thereof |
| CN111968996A (en) * | 2020-07-29 | 2020-11-20 | 上海集成电路研发中心有限公司 | Method for improving abnormal wire drawing in micro-lens process |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101127323B (en) | 2011-06-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7737479B2 (en) | Image sensor | |
| US7875947B2 (en) | Filter, color filter array, method of manufacturing the color filter array, and image sensor | |
| CN100539169C (en) | Backside illuminated image-sensor, its formation method and encapsulation | |
| TWI326123B (en) | Image sensor with decreased optical interference between adjacent pixels | |
| US9111828B2 (en) | Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus | |
| CN100416844C (en) | CMOS image sensor having prism and method for fabricating the same | |
| US6590239B2 (en) | Color filter image array optoelectronic microelectronic fabrication with a planarizing layer formed upon a concave surfaced color filter region | |
| US7892628B2 (en) | Image sensor and method for manufacturing the same | |
| TW200308083A (en) | Semiconductor device and method of manufacturing the same | |
| CN101127323B (en) | Image sensing part and its making method | |
| CN103107175B (en) | There is the imageing sensor of the dark current performance of improvement | |
| US20100015748A1 (en) | Image Sensor and Method for Manufacturing the Same | |
| TWI775378B (en) | Solid-state image sensor | |
| CN101604661A (en) | The manufacture method of image sensering device | |
| US9653506B2 (en) | Image sensor and method for fabricating the same | |
| KR20010061078A (en) | Method for fabricating image sensor with correct color image | |
| JP4419662B2 (en) | Solid-state imaging device and manufacturing method thereof | |
| TWI313931B (en) | Image sensor and method of manufacturing the same | |
| CN101136363A (en) | Micro-optical collector structure and manufacturing method thereof | |
| CN101442067B (en) | Image sensor and fabricating method thereof | |
| CN113824905A (en) | Dark full-color functional image sensor and preparation method thereof | |
| KR20080015310A (en) | Cmos image sensor and method of fabricating the same | |
| KR20070029447A (en) | Cmos image sensor and method for manufacturing the same | |
| KR20100063908A (en) | Cmos image sensor and structure with double passivation layers | |
| KR20060011446A (en) | Cmos image sensor and fabricating method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |