CN101126899A - Sub-wavelength continuous surface micro-structure preparation method based on dry method etching loading effect - Google Patents
Sub-wavelength continuous surface micro-structure preparation method based on dry method etching loading effect Download PDFInfo
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- CN101126899A CN101126899A CNA2007101212445A CN200710121244A CN101126899A CN 101126899 A CN101126899 A CN 101126899A CN A2007101212445 A CNA2007101212445 A CN A2007101212445A CN 200710121244 A CN200710121244 A CN 200710121244A CN 101126899 A CN101126899 A CN 101126899A
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Abstract
The utility model discloses a microstructure preparation method of the sub-wavelength continuous surface based on dry etching load effect. The utility model adopts the technical proposal that: firstly, substrate material is selected, dry etching equipment is demarcated and a relation is created between slit width and etching rate; secondly, on the base of the result of the demarcation, the dry etching mask patterns matched with the object structure is designed and the pattern of metallic material on the surface of the substrate is made; thirdly, the dry etching on the substrate is made according to etching parameters in the calibration. After the completion of the etching, the substrate material is polished by wet-etching, and thus the object structure is formed. The utility model realizes the forming of the microstructure of the sub-wavelength continuous surface by utilizing the load effect in dry etching. Additionally, the utility model can also realize the forming of the continuous surface structure when the dimension is more than the wavelength making a wide application in novel functional devices based on surface plasma.
Description
Technical field
The invention belongs to the micro-nano structure processing technique field, specifically a kind of sub-wavelength continuous surface micro-structure preparation method based on the dry etching load effect.
Background technology
In recent years, along with developing rapidly of micro-nano process technology and nano material, the electromagnetic property of micro-nano metal construction is just receiving increasing concern.The interaction of light and surperficial micro-nano metal construction has produced a series of new unusual physical phenomenons.For example, French scientist Ebbesen in 1998 and co-worker thereof find the unusual enhancing phenomenon (Extraordinary Optical Transmission) by the light of sub-wavelength metallic hole array.People's such as H.J.Lezec research further shows: when light transmission sub-wavelength metal nano-pore, its transmitance not only can be enhanced, and the angle of diffraction of light beam is very little, and the diffraction law in the common dielectric medium structure is not followed in transmission direction.In addition, relevant new phenomenon with the surface plasma metal micro-nanostructure also has: after the metal micro structure effect of light and special distribution, occur along the characteristic of left hand rule propagation, illustrative material has negative index; Light is by behind the special metal nano-pore structure, and the light wave outgoing has fabulous directivity or the like.The research of micro-nano metal structure surface plasma wave has formed a new field.Novel surface plasma technique based on the micro-nano metal construction can be widely used in a plurality of fields such as military affairs, medical treatment, national security.
Yardstick can be widely used in photometry calculation, optical communication and the various Micro-Opto-Electro-Mechanical Systems much larger than the continuous-surface shape structure of wavelength.This class device adopts traditional shadow tone gray scale mask technology can realize good shaping.And physical dimension and wavelength quite even less than the continuous-surface shape structure of wavelength also can be widely used among the various new function devices based on surface plasma.The shaping of this class device is difficult to adopt traditional technology to realize being shaped owing to be subjected to the influence of Diffraction of Light behavior.In order to break through the preparation method of sub-wavelength continuous surface micro-nano structure, the present invention proposes a kind of sub-wavelength continuous surface micro-structure preparation method based on the dry etching load effect.
Summary of the invention
The technical problem to be solved in the present invention is: the problem that is difficult to be extended to the sub-wavelength yardstick at the range of work of existing continuous surface micro-structure technology of preparing, propose a kind of sub-wavelength continuous surface micro-structure preparation method, realize the sub-wavelength continuous surface structure formation based on the dry etching load effect.
Technical solution of the present invention: a kind of sub-wavelength continuous surface micro-structure preparation method based on the dry etching load effect is characterized in that step is as follows:
(1) at first selects base material, then dry etching equipment is demarcated, set up the relation wide and etch rate of stitching;
(2), design and the corresponding dry etching mask graph of object construction, and make the dry etching mask graph of metal material at substrate surface according to the result who demarcates;
(3) adopt the etching parameters of using in the calibration process that dry etching is carried out in substrate;
(4) after etching finishes, the base material after the etching is carried out the wet etching polishing, can obtain the object construction that needs after polishing is finished.
Substrate in the described step (1) is semiconductor silicon, germanium, or the photocrosslinkable material quartz etc.
The wide relation with etching depth of seam in the described step (1) mainly relies on experiment that etching depth is demarcated under the technique for fixing condition.
Metal material in the described step (2) is a chromium.
For the material of the substrate that can carry out the oxidizing polishing processing, also can carry out oxidation earlier in the described step 4, the oxide that substrate surface is produced removes then, thus the polishing of implementation structure.
The beneficial effect that the present invention compared with prior art has is: the existing major technique that can be used for the preparation of continuous-surface shape structure comprises: mobile mask technique, mask mobile filter technology, gray scale mask technique, half-tone mask technology etc., they can only make the structure of characteristic dimension much larger than optical wavelength.Approaching for characteristic dimension and optical wavelength, even much smaller than the structure of wavelength since the existence of Diffraction of Light effect can't realize at all, the present invention has realized the shaping of sub-wavelength yardstick continuous surface micro-structure by utilizing load effect in the dry etching process, and the present invention also can realize the shaping of size much larger than the various continuous-surface shape structures of wavelength certainly.
Description of drawings
The wide relation with etching depth of Fig. 1 for the seam of setting up among a kind of embodiment of the present invention, X represents the width that stitches among the figure, and each big lattice is 200nm, and Y represents the etching depth of etching after 6 minutes, each big lattice 200nm;
Fig. 2 encodes according to the demarcation that Fig. 1 makes for the present invention, and the dry etching mask graph that adopts existing direct electronic beam writing technology to make on the silicon materials surface, 1 expression base material silicon among the figure, 2 expression crome metals;
The result that Fig. 3 adopts the dry etching substrate to obtain after 6 minutes for the present invention, 1 expression silicon materials among the figure, 2 expression crome metal materials;
Fig. 4 carries out the object construction that obtains after oxidation and deoxidation layer are handled for the silicon materials of the present invention after to etching, after the silicon materials between the slit are oxidized, calculate with HF and to remove, and forms the continuous-surface shape structure at last, 1 expression silicon materials among the figure.
Embodiment
The present invention is described in detail below in conjunction with embodiment, but protection scope of the present invention is not limited in the following example, should comprise the full content in claims.
Specific implementation process of the present invention is as follows:
(1) at first select semiconductor silicon as base material, and the equipment that uses is carried out dry etching demarcate, set up under 6 minutes situations of etching, the relation of stitch wide and relief depth as shown in Figure 1;
(2) result who demarcates according to Fig. 1 according to the relief depth of diverse location object construction, selects the narrow slit structure of different in width.Get final product the mask graph that dry etching is used after all selecting to finish; As shown in Figure 2;
(3) preparing the mask graph that material is a crome metal at the semiconductor silicon substrate surface, is that mask carries out dry etching to substrate with this chromium figure then; Structure after the etching as shown in Figure 3;
(4) base material after the etching is carried out high-temperature oxydation, part between adjacent slots will be by complete oxidation, the surface of structure also will produce certain thickness oxide layer, adopt HF acid that oxide layer is corroded, after removing the oxide layer structure between adjacent slots, can obtain the object construction of needs, as shown in Figure 4.
Claims (5)
1. sub-wavelength continuous surface micro-structure preparation method based on the dry etching load effect is characterized in that step is as follows:
(1) at first selects base material, then dry etching equipment is demarcated, set up the relation wide and etch rate of stitching;
(2), design and the corresponding dry etching mask graph of object construction, and make the dry etching mask graph of metal material at substrate surface according to the result who demarcates;
(3) adopt the etching parameters of using in the calibration process that dry etching is carried out in substrate;
(4) after etching finishes, the base material after the etching is carried out the wet etching polishing, can obtain the object construction that needs after polishing is finished.
2. the sub-wavelength continuous surface micro-structure preparation method based on the dry etching load effect according to claim 1 is characterized in that: the substrate in the described step (1) is semiconductor silicon, germanium, or the photocrosslinkable material quartz.
3. the sub-wavelength continuous surface micro-structure preparation method based on the dry etching load effect according to claim 1 is characterized in that: the wide relation with etching depth of the seam in the described step (1) mainly relies on experiment that etching depth is demarcated under the technique for fixing condition.
4. the sub-wavelength continuous surface micro-structure preparation method based on the dry etching load effect according to claim 1 is characterised in that: the metal material in the described step (2) is a chromium.
5. the sub-wavelength continuous surface micro-structure preparation method based on the dry etching load effect according to claim 1, be characterised in that: in the described step (4) for the material that carries out the substrate that oxidizing polishing handles, carry out oxidation earlier, the oxide that substrate surface is produced removes then, thus the polishing of implementation structure.
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2007101212445A CN101126899A (en) | 2007-08-31 | 2007-08-31 | Sub-wavelength continuous surface micro-structure preparation method based on dry method etching loading effect |
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| CNA2007101212445A CN101126899A (en) | 2007-08-31 | 2007-08-31 | Sub-wavelength continuous surface micro-structure preparation method based on dry method etching loading effect |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101738722B (en) * | 2008-11-12 | 2012-07-04 | 中国科学院半导体研究所 | Method for manufacturing micro-opto-electro-mechanical system-based wave-adjustable harmonic filter |
| CN107219722A (en) * | 2017-05-19 | 2017-09-29 | 湖北知本信息科技有限公司 | The preparation method of high anti-reflection surface micro-structure and the micro-structural of preparation |
| CN111290058A (en) * | 2020-02-27 | 2020-06-16 | 东北大学秦皇岛分校 | Method for forming super surface with adjustable surface plasmon orientation efficient coupling phase |
| CN116626987A (en) * | 2023-07-17 | 2023-08-22 | 上海鲲游科技有限公司 | Process modulation method based on Lag effect |
-
2007
- 2007-08-31 CN CNA2007101212445A patent/CN101126899A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101738722B (en) * | 2008-11-12 | 2012-07-04 | 中国科学院半导体研究所 | Method for manufacturing micro-opto-electro-mechanical system-based wave-adjustable harmonic filter |
| CN107219722A (en) * | 2017-05-19 | 2017-09-29 | 湖北知本信息科技有限公司 | The preparation method of high anti-reflection surface micro-structure and the micro-structural of preparation |
| CN111290058A (en) * | 2020-02-27 | 2020-06-16 | 东北大学秦皇岛分校 | Method for forming super surface with adjustable surface plasmon orientation efficient coupling phase |
| CN116626987A (en) * | 2023-07-17 | 2023-08-22 | 上海鲲游科技有限公司 | Process modulation method based on Lag effect |
| CN116626987B (en) * | 2023-07-17 | 2023-10-10 | 上海鲲游科技有限公司 | Process modulation method based on Lag effect |
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