CN101110352A - Method of manufacturing semiconductor device and manufacturing device thereof - Google Patents
Method of manufacturing semiconductor device and manufacturing device thereof Download PDFInfo
- Publication number
- CN101110352A CN101110352A CNA2007101379354A CN200710137935A CN101110352A CN 101110352 A CN101110352 A CN 101110352A CN A2007101379354 A CNA2007101379354 A CN A2007101379354A CN 200710137935 A CN200710137935 A CN 200710137935A CN 101110352 A CN101110352 A CN 101110352A
- Authority
- CN
- China
- Prior art keywords
- resist
- net structure
- screen net
- zone
- printed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention provides a manufacturing method of a semiconductor device and a manufacturing device, which can reduce the manufacturing cost to form pattern of high precision. An imprinter (100) is provided with silk screen structure (2) of emulsion (3) stuck with pattern. A wafer (6) is installed at the bottom of the silk screen structure (2) and thixotropic printing resist material (9) containing grain composition drips from the upside of the silk screen structure (2). The force is applied and at the same time the squeegee is scraped. The printing resist material (9) is pulled on the silk screen structure (2). The printing resist material (9) is transfer printed on the wafer (6). Subsequently, the printing resist material (9) is heated to form printing resist film (11). The printing resist film (11) is used as mask to process the wafer (6). And then, the solvent is removed using resist such as N-methyl-2-pyrrolidone (16), and the printing resist film (11) is removed from the wafer (6).
Description
Technical field
The present invention relates to the manufacture method of semiconductor devices such as various IC (integrated circuit), transducer and switch element, and the manufacturing installation of semiconductor device.
Background technology
When semiconductor devices such as various IC of manufacturing or semiconductor transducer, sometimes at the discoideus semiconductor substrate that constitutes by silicon or compound (hereinafter referred to as " wafer ", wafer) go up to form photoresist (photo resist) film with desired pattern, with this photoresist as the mask processed wafer.In the past, the mask of photoresist was that the photo-mask process of coating, heating, exposure and 4 operations of video picture by carrying out photoresist successively forms.
It is the occasion that purpose forms metal film that photoetching process for example is used for wiring on wafer, with the local occasion of injecting wafer inside of impurity such as phosphorus, boron, wafer is carried out the occasion etc. that local etching makes its attenuate.In addition, the photoetching process manufacturing process that also is used for IGBT switch elements such as (insulated gate polar form bipolar transistors) makes the occasion of wafer grinding.
Figure 24～Figure 29 is that the key diagram that photoetching makes the technology of wafer grinding is carried out in expression.At first, use the rotary coating device be called as the rotary coating machine, make wafer 51 with hundreds of～rotating speed high speed rotating of thousands of rev/mins.Under such state, from the nozzle 53 that is positioned at wafer 51 tops a certain amount of photo anti-corrosion agent material 52 that drips.Because wafer 51 at full speed rotates, photo anti-corrosion agent material 52 launches (with reference to Figure 24) thinly on the surface of wafer 51.
Then, on hot plate or in the thermostat wafer 51 is heated, remove the solvent composition that is contained in the photo anti-corrosion agent material 52, photo anti-corrosion agent material 52 is solidified.Then, on quartz glass system dry plate, form pattern, described pattern comprises the part that can see through ultraviolet (UV) and can not make its permeation parts, described quartz glass system dry plate is used as mask 54, to photo anti-corrosion agent material 52 irradiation ultraviolet radiations (with reference to Figure 25) of curing.
Then, wafer 51 be impregnated in carry out video picture in the organic solvent, remove the not part of photo anti-corrosion agent material 52, form the photoresist 55 (with reference to Figure 26) of desired pattern.Photo anti-corrosion agent material has eurymeric and minus.No matter any, the photo anti-corrosion agent material that shines the place of ultraviolet (UV) all can react.The photo anti-corrosion agent material 52 of eurymeric dissolves in aqueous alkali, and the photo anti-corrosion agent material 52 of minus does not dissolve in organic solvent.Therefore, to the photo anti-corrosion agent material 52 of eurymeric or minus,, carry out video picture across mask 54 irradiation ultraviolet radiation UV, thereby can be formed with the local of photo anti-corrosion agent material 52 and not have the place of photo anti-corrosion agent material 52, obtain forming the photoresist 55 of pattern.
Secondly, form diaphragm 56 in the back side and the side of wafer 51.Then, wafer 51 be impregnated in the etching solutions of pouring in the container 57 such as mixed acid 58, remove in the wafer 51 not by the part of photoresist 55 and diaphragm 56 coatings, with the central portion attenuate (with reference to Figure 27) of wafer 51.
Secondly, spray acetone or propylene glycol monomethyl ether acetate etc. from 59 pairs of rotating wafer of discharge nozzle 51 and remove liquid 60, photoresist 55 is removed (with reference to Figure 28) from wafer 51.
Then, make wafer 51 rotations, after feasible removal liquid 60 disperses,, finish the wafer 51 (with reference to Figure 29) that periphery is thick, central part is thin through washing, drying.Making the peripheral part of wafer 51 keep thick state like this, is for the lightening holes with the thick frame protection central portion of peripheral part, prevents from the science and engineering preface wafer 51 crackings or crooked to take place throughout.As the semiconductor element use only is the central portion of attenuate.Etching by carrying out silicon or dielectric film etc., the plating of metal film, foreign ion injection etc., the occasion that forms circuit on wafer 51 is also identical.
Except utilizing photoetching process to form the method for mask of resist like this, also know the method for using printing technology.For example, known have on wafer the web plate photosensitive printing glue form pattern, utilizes etching to reorganize and outfit this method of patterning (for example with reference to following patent documentation 1).Specifically, the photoresists screen printing is formed on wafer after the pattern, across mask directional light is shone in the side of printed patterns and expose.Then, remove exposed portion, generate the video picture pattern, carry out drying and burn till, on wafer, form arbitrary graphic pattern with stripper.In the method, the relative wafer in the side of printed patterns becomes the face of inclination, carries out video picture by the light to the wafer illumination vertical direction, and the relative wafer in the side of video picture pattern is vertical.
As the method for using printing technology, known have on print roller, form the resist pattern, by making this roller and wafer crimping, with the method (for example reference following patent documentation 2) of the resist pattern transfer on the print roller on wafer.Specifically, prepare to be formed with the galley (clich é) of upper groove, at the groove inner filling resist of galley.At this moment, use scraper plate that the galley surface is flattened, make only at groove inner filling resist.Then, print roller and galley surface is contacted and rotate, the resist of filling in the groove of galley is transferred on the print roller.After this, on wafer, rotate, on wafer surface, form the resist pattern by making print roller.
In addition, known also have by photoetching process photoresist is formed after the pattern, remove the method (for example, with reference to following patent documentation 3) of photoresist and etch residue with plasma.Also have by photoetching process dry film is formed after the pattern, utilize the swelling stripping means to peel off the method for dry film (for example, with reference to following patent documentation 4).
Patent documentation 1: the Japan Patent spy opens the 2000-258921 communique
Patent documentation 2: the Japan Patent spy opens the 2004-046144 communique
Patent documentation 3: the special table of Japan Patent 2005-523587 communique
Patent documentation 4: Japanese patent laid-open 11-144619 communique
But if utilize aforesaid photoetching process to form pattern, the device price that each operation is used is expensive, therefore, needs great amount of investment, has the low problem of production efficiency.For example, the price of carrying out the coating display of photoresist coating and video picture reaches tens million of yen, several hundred million approximately yen of exposure device price.
And the processing in photolithographic each operation needs all kinds of solvents, has the problem of the expense of the buying increase of these solvents.For example, when being coated with, photo anti-corrosion agent material need be used to remove solvent that chip back surface pollutes, aqueous slkali and organic solvent that video picture is used, the gas that is used to remove photoresist or organic solvent etc.
And these solvents finally nearly all go out of use, and have the problem of waste of material.For example, with rotating coating painting photoresist material the time, remain in photoresist dosage 10% below of photo anti-corrosion agent material on the wafer surface for all dripping.Photo anti-corrosion agent material attached to chip back surface is also all discarded with the solvent that is used for its removal.
In the method for above-mentioned patent documentation 1 record, owing to carry out photoetching, the same with photoetching process, the device price of using in each operation is expensive, the problem that exists manufacturing cost to increase.
In the method for above-mentioned patent documentation 2 records, owing to form pattern by offset printing, to the wafer transfer printing time, the pattern position skew can take place or dim pattern is unclear, pattern part comes off, there is the problem that is difficult to form patterns of high precision.And, during resist on removing wafer, use water-insoluble solvent usually, therefore, exist the particulate component that comprises in the resist about 10% not dissolve and residue in the problem of wafer surface.
In the method for above-mentioned patent documentation 3 and patent documentation 4 records, owing to use photoetching process or printing technology, the problem that existence and photoetching process and patent documentation 1,2 are identical.
Summary of the invention
In order to eliminate the problem that above-mentioned prior art exists, the objective of the invention is to, provide and can reduce manufacture method and the manufacturing installation thereof that manufacturing cost can form the semiconductor device of patterns of high precision again.
In order to solve above-mentioned existing problems, realize above-mentioned purpose, technical scheme of the present invention is as follows.
(1) a kind of manufacture method of semiconductor device is characterized in that, described manufacture method comprises:
Arrangement step will be printed object and be configured under the screen net structure, and described screen net structure is provided with the 1st zone that resist can pass through and the 2nd zone that stops resist to pass through, and described the 1st zone forms desirable pattern;
Painting process, on described screen net structure, place the anticorrosive additive material that comprises particulate component, make this screen net structure of squeegee crimping on one side, make the described object that is printed of this screen net structure contact, move described squeegee on one side, at the described anticorrosive additive material that is coated with the pattern suitable on the object that is printed with described the 1st zone;
Form operation, heat-treat, form etchant resist coating the described anticorrosive additive material that is printed on the object;
Manufacturing procedure as mask, is processed the described object that is printed with described etchant resist; And
The 1st removes operation, and the described object that is printed after processing is removed described etchant resist.
According to the invention of this technical scheme (1), screen net structure can form desirable pattern by the zone of anticorrosive additive material, and the anticorrosive additive material that will contain particulate component is coated on the semiconductor wafer by screen net structure, forms the etching mask.Thus, when making semiconductor device, needn't use, can when suppressing manufacturing cost, form pattern with high precision as the price apparatus of photoetching process and a large amount of reagent.
(2) as the manufacture method of above-mentioned (1) described semiconductor device, it is characterized in that,
The described object that is printed is a semiconductor wafer;
Described arrangement step is that described semiconductor wafer is configured under the screen net structure, and described screen net structure is provided with the 1st zone that resist can pass through and the 2nd zone that stops resist to pass through, and described the 1st zone forms desirable pattern;
Described painting process is placed the anticorrosive additive material that comprises particulate component on described screen net structure, make this screen net structure of squeegee crimping on one side, make this screen net structure contact described semiconductor wafer, move described squeegee on one side, on described semiconductor wafer, be coated with the anticorrosive additive material of the pattern suitable with described the 1st zone;
Described formation operation is heat-treated the anticorrosive additive material of coating on the described semiconductor wafer, forms etchant resist;
Described manufacturing procedure as mask, is selectively ground described semiconductor wafer by etching with described etchant resist;
The described the 1st removes the described semiconductor wafer of operation after the processing removes described etchant resist.
According to the invention of this technical scheme (2), can by etched semiconductor wafer it be ground forming figuratum etchant resist accurately as etching mask, can make the semiconductor wafer thin layerization.
(3) as the manufacture method of above-mentioned (1) described semiconductor device, it is characterized in that,
The described object that is printed is the semiconductor wafer that the surface is formed with dielectric film;
Described arrangement step is that described semiconductor wafer is configured under the screen net structure, and described screen net structure is provided with the 1st zone that resist can pass through and the 2nd zone that stops resist to pass through, and described the 1st zone forms desirable pattern;
Described painting process is placed the anticorrosive additive material that comprises particulate component on described screen net structure, make this screen net structure of squeegee crimping on one side, make this screen net structure contact described semiconductor wafer, move described squeegee on one side, on described semiconductor wafer, be coated with the anticorrosive additive material of the pattern suitable with described the 1st zone;
Described formation operation is heat-treated the anticorrosive additive material of coating on the described semiconductor wafer, forms etchant resist;
Described manufacturing procedure as mask, is selectively removed described dielectric film by etching with described etchant resist;
The described the 1st removes the described semiconductor wafer of operation after the processing removes described etchant resist;
Comprise that also diffusion zone forms operation, on the described semiconductor wafer of removing described etchant resist, as mask, inject ion and heat-treat the formation diffusion zone with described dielectric film.
According to the invention of this technical scheme (3), can will form figuratum etchant resist accurately as mask, form the mask that diffusion zone forms usefulness, on semiconductor wafer, form diffusion zone.
(4) as the manufacture method of above-mentioned (1) described semiconductor device, it is characterized in that,
The described object that is printed is the semiconductor wafer that is formed with conducting film on dielectric film;
Described arrangement step is that described semiconductor wafer is configured under the screen net structure, and described screen net structure is provided with the 1st zone that resist can pass through and the 2nd zone that stops resist to pass through, and described the 1st zone forms desirable pattern;
Described painting process is placed the anticorrosive additive material that comprises particulate component on described screen net structure, make this screen net structure of squeegee crimping on one side, make this screen net structure contact described semiconductor wafer, move described squeegee on one side, on described semiconductor wafer, be coated with the anticorrosive additive material of the pattern suitable with described the 1st zone;
Described formation operation is heat-treated the anticorrosive additive material of coating on the described semiconductor wafer, forms etchant resist;
Described manufacturing procedure as mask, is selectively removed described conducting film by etching with described etchant resist, forms distribution;
The described the 1st removes the described semiconductor wafer of operation after the processing removes described etchant resist.
According to the invention of this technical scheme (4), can on semiconductor wafer, form distribution with the etchant resist that forms pattern accurately as mask.
(5) as the manufacture method of each described semiconductor device in above-mentioned (1)-(4), it is characterized in that,
The described the 1st removes operation removes solvent to the described object injection resist that is printed of rotation in the horizontal direction, removes described etchant resist.
According to the invention of this technical scheme (5), because being sprayed resist, semiconductor wafer removes solvent, can peel off the particulate component of etchant resist expeditiously.
(6) as the manufacture method of each described semiconductor device in above-mentioned (1)-(4), it is characterized in that,
Described the 1st removal operation is that the described object that is printed be impregnated in the resist removal solvent, removes described etchant resist.
According to the invention of this technical scheme (6), can peel off etchant resist from semiconductor wafer expeditiously.
(7) as the manufacture method of each described semiconductor device in above-mentioned (1)-(4), it is characterized in that,
Described the 1st removal operation is that the described object that is printed that impregnated in resist removal solvent is rotated, and removes described etchant resist.
According to the invention of this technical scheme (7), can reduce the use amount that resist is removed solvent.And, because rotation applies swing, can high efficiency peel off etchant resist.
(8) as the manufacture method of each described semiconductor device in above-mentioned (5)-(7), it is characterized in that,
It is more than the 8 weight % that described resist is removed the solubility of solvent in water.
According to the invention of this technical scheme (8), the etchant resist swelling is peeled off it from semiconductor wafer.
(9) as the manufacture method of each described semiconductor device in above-mentioned (1)-(8), it is characterized in that,
Described anticorrosive additive material has thixotropy.
According to the invention of this technical scheme (9), resist-coating is a liquid condition on being printed object the time, and becomes solid state when coating finishes, and thus, can form pattern with high precision.
(10) as the manufacture method of each described semiconductor device in above-mentioned (1)-(9), it is characterized in that, comprise that also the 2nd removes operation, will residue in the described particulate material that is printed object of having removed etchant resist by plasma etching and remove.
According to the invention of this technical scheme (10), can remove the particulate component that residues in the etchant resist that is printed on the object, can prevent pollution that particulate component causes semiconductor-fabricating device etc.
(11) a kind of manufacturing installation of semiconductor device is characterized in that, described manufacturing installation comprises:
Collocation mechanism will be printed object and be configured under the screen net structure, and described screen net structure is provided with the 1st zone that resist can pass through and the 2nd zone that stops resist to pass through, and described the 1st zone forms desirable pattern;
Coating mechanism, on described screen net structure, place the anticorrosive additive material that comprises particulate component, be provided with squeegee, make described this screen net structure of squeegee crimping on one side, make the described object that is printed of this screen net structure contact, move described squeegee on one side, at the described anticorrosive additive material that is coated with the pattern suitable on the object that is printed with described the 1st zone;
Form mechanism, heat-treat, form etchant resist coating the described anticorrosive additive material that is printed on the object;
Organisation of working as mask, is processed the described object that is printed with described etchant resist; And,
The 1st removal mechanism, the described object that is printed after processing is removed described etchant resist.
According to the invention of this technical scheme (11), screen net structure can form desirable pattern by the zone of anticorrosive additive material, and the anticorrosive additive material that will contain particulate component is coated on the semiconductor wafer by screen net structure, forms the etching mask.Thus, when making semiconductor device, needn't use, can when suppressing manufacturing cost, form pattern with high precision as the price apparatus of photoetching process and a large amount of reagent.
According to the manufacture method and the manufacturing installation thereof of semiconductor device of the present invention, has the effect that can when suppressing manufacturing cost, form pattern with high precision.
Description of drawings
Fig. 1 is the structure key diagram of used printing apparatus in the manufacture method of the semiconductor device that relates to of execution mode 1,2.
Fig. 2 is the structure key diagram of used printing apparatus in the manufacture method of the semiconductor device that relates to of execution mode 1,2.
Fig. 3 is the key diagram of the manufacture method of the semiconductor device that relates to of expression execution mode 1.
Fig. 4 is the key diagram of the manufacture method of the semiconductor device that relates to of expression execution mode 1.
Fig. 5 is the key diagram of the manufacture method of the semiconductor device that relates to of expression execution mode 1.
Fig. 6 is the key diagram of the manufacture method of the semiconductor device that relates to of expression execution mode 1.
Fig. 7 is the key diagram of the manufacture method of the semiconductor device that relates to of expression execution mode 1.
Fig. 8 is the key diagram of the manufacture method of the semiconductor device that relates to of expression execution mode 1.
Fig. 9 is the key diagram of the manufacture method of the semiconductor device that relates to of expression execution mode 1.
Figure 10 is the key diagram of the manufacture method of the semiconductor device that relates to of expression execution mode 1.
Figure 11 is the key diagram of the manufacture method of the semiconductor device that relates to of expression execution mode 1.
Figure 12 is the structural representation key diagram of plasma-etching apparatus.
Figure 13 is the structural representation key diagram of plasma-etching apparatus.
Figure 14 is the key diagram that shows the another way of the removal operation of printing resist.
Figure 15 is the key diagram that shows the another way of the removal operation of printing resist.
Figure 16 is the key diagram of the manufacturing method for semiconductor device part that shows that execution mode 2 relates to.
Figure 17 is the key diagram of the manufacturing method for semiconductor device part that shows that execution mode 2 relates to.
Figure 18 is the key diagram of the manufacturing method for semiconductor device part that shows that execution mode 2 relates to.
Figure 19 is the key diagram of the manufacturing method for semiconductor device part that shows that execution mode 2 relates to.
Figure 20 is the key diagram of the manufacturing method for semiconductor device part that shows that execution mode 2 relates to.
Figure 21 is the key diagram of the manufacturing method for semiconductor device part that shows that execution mode 2 relates to.
Figure 22 is the key diagram of the manufacturing method for semiconductor device part that shows that execution mode 2 relates to.
Figure 23 shows flow chart one example of manufacturing method for semiconductor device of the present invention.
Figure 24 shows to implement the description of the process figure that photoetching process makes wafer grinding.
Figure 25 shows to implement the description of the process figure that photoetching process makes wafer grinding.
Figure 26 shows to implement the description of the process figure that photoetching process makes wafer grinding.
Figure 27 shows to implement the description of the process figure that photoetching process makes wafer grinding.
Figure 28 shows to implement the description of the process figure that photoetching process makes wafer grinding.
Figure 29 shows to implement the description of the process figure that photoetching process makes wafer grinding.
Among the figure, symbol description is as follows:
1 framework
2 screen net structures
3 emulsions
4 exposed divisions
5 lining portions
6 wafers
7 peripheral parts
8 squeegees
9,10 printing anticorrosive additive materials
11 printing etchant resists
12 diaphragms
13 containers
14 etching solutions
15 discharge nozzles
16 N-N-methyl-2-2-pyrrolidone N-s
17 jumps
18 particulate components
Embodiment
Below, with reference to accompanying drawing the manufacture method of semiconductor device of the present invention and the preferred forms of manufacturing installation are elaborated.In following examples, though to inscape, kind, combination, shape, configuration waits and has done various qualifications relatively,, these only exemplify, and the present invention is not limited thereto.
Fig. 1 and Fig. 2 are the structure key diagrams of the printing apparatus used of the manufacture method of the semiconductor device that relates to of execution mode 1,2.Fig. 1 is the major part plane graph of printing apparatus 100, and Fig. 2 is the major part profile along X-X ' the line cut-out of Fig. 1.In Fig. 1, in printing apparatus 100, screen net structure (silk netting) 2 is applied certain force of strain, its end is pasted pay on framework 1.The wire rod of screen net structure 2 is stainless steel wires for example, and line directly is for example 30 μ m, and aperture opening ratio is for example 50%.Or the wire rod of screen net structure 2 also can adopt for example polyester.
Screen net structure 2 is by not constituting with the ring-type exposed division 4 of emulsion 3 linings and the lining portion 5 that is covered by emulsion 3.Emulsion 3 pastes to be paid in the back side of screen net structure 2.Lining portion 5 does not pass through the printing anticorrosive additive material because of emulsion 3.Exposed division 4 becomes makes the printing anticorrosive additive material lead to the window that does not have illustrated wafer peripheral part.The width of exposed division 4 is made as for example 5mm.
Fig. 3～Figure 11 is the key diagram of the manufacturing method for semiconductor device that relates to of expression execution mode 1.In execution mode 1, the occasion of the mask when making wafer 6 attenuates to using the printing resist to form describes.At first, wafer 6 is positioned over the back side of the screen net structure 2 of printing apparatus illustrated in figures 1 and 2 100.Then, a certain amount of printing anticorrosive additive material 9 that drips on the surface of the screen net structure 2 of printing apparatus 100.This printing anticorrosive additive material 9 comprises the particulate component of carbon about 10% or silicon etc., has thixotropy (thixotropy).
Then, under the state of a certain amount of printing anticorrosive additive material 9 of mounting, apply certain pressure from top to squeegee 8, make squeegee 8 and screen net structure 2 crimping (with reference to Fig. 3, Fig. 4.Fig. 4 is the profile that cuts off along Fig. 3 X-X ' line).Squeegee 8 is not applied under the state of power, wafer 6 is made as for example about 1.6mm with the interval of screen net structure 2.Applied pressure is made as for example 0.035MPa during with squeegee 8 crimping screen net structures 2.
Then, maintenance makes the state of squeegee 8 crimping screen net structures 2 scrape and sweeps, tractive printing anticorrosive additive material 9 (with reference to Fig. 5) on screen net structure 2.At this moment, printing resist 9 is by the exposed division 4 of screen net structure 2, with printing anticorrosive additive material 10 transfer printings of the ring-type peripheral part 7 at wafer 6.Printing anticorrosive additive material 9 has thixotropy, therefore, just becomes aqueously by exerting pressure with squeegee 8, can easily pass through exposed division 4.The printing resist 10 of transfer printing on wafer 6 solidifies immediately owing to be not under pressure.
Then, carry out heat treated with heating furnace at the wafer 6 that for example has been made as under 100 ℃ temperature, 10 minutes the heating condition of heating time to transfer printing printing anticorrosive additive material 10.Like this, remove solvent composition from printing anticorrosive additive material 10,10 sclerosis of printing anticorrosive additive material form printing etchant resist 11.Like this, comprise printing anticorrosive additive material 9, can on wafer 6, form and form figuratum printing etchant resist 11 accurately with thixotropic particulate component by use.Then, on the side of wafer 6 and the back side with resist etc. form diaphragm 12 (with reference to Fig. 6, Fig. 7.Fig. 7 is the profile that cuts off along Fig. 6 Y-Y ' line).
Then, in container 13, pour mixed liquor into, the liquid temperature is set at for example 25 ℃, wafer 6 is immersed for example 20 minutes (with reference to Fig. 8) in etching solution 14 as for example sulfuric acid, nitric acid, hydrofluoric acid and the phosphoric acid of etching solution 14.Like this, to the part that is not printed 12 protections of etchant resist 11 or diaphragm, be that the central portion of wafer 6 carries out etch depth for example is about 70 μ m apart from the surface etching.The jump between the central portion of the wafer of the peripheral part of etched wafer and etching 17 is not an etch depth, is about 70 μ m, and the thickness of the central portion of wafer 6 is than the before thin about 70 μ m of etching.
Secondly, make wafer 6 with the rotation of for example 500 rev/mins～2000 rev/mins rotating speed, from being arranged at the discharge nozzle 15 on the etchant resist removal device, spray N-N-methyl-2-2-pyrrolidone N-16 organic solvents such as grade, make lining wafer 6 peripheral part 11 swellings of printing etchant resist and it is peeled off (with reference to Fig. 9).N-N-methyl-2-2-pyrrolidone N-16 is that the solubility in water is the water-miscible organic solvent more than the 8 weight %.At this moment, if, form two-layer structure, be heated to about 60 ℃ the organic solvent that ejects then better with the outside of heating tube lining discharge nozzle 15.If under the state on wafer 6 surfaces, make it static in mounting the organic solvent that drips, then can reduce the use amount of organic solvent.Discharge nozzle 15 can be fixed near the peripheral part of wafer 6, also can move between the central portion of wafer 6 and peripheral part.
After removing printing etchant resist 11, also to the N-N-methyl-2-2-pyrrolidone N-16 of 6 injections of rotating wafer in the short time as the resist remover.Like this, the particulate component in the printing etchant resist 11 that is not dissolved in N-N-methyl-2-2-pyrrolidone N-16 is dispersed, it is almost completely removed.
As the organic solvent (resist removal solvent) of removing printing etchant resist 11 usefulness, except N-N-methyl-2-2-pyrrolidone N-16, can use N, dinethylformamide, propylene glycol, 2-(1-methoxyl group) propyl acetate, methyl-sulfoxide, dipropylene glycol monomethyl ether, the tripropylene glycol monomethyl ether, triglyme, dihydro-2 (3H)-furanone, 1,3-dimethyl-2-imidazolidinone, 2-(2-n-butoxy ethyoxyl) ethanol, acetone, ethanol, methyl alcohol, 2-acetone, oxolane, ethylene glycol, glycerine, 1, the water-miscible organic solvents of the solubility in water more than 8 weight % such as 2-Benzenediol or 2-butanone.These water-miscible organic solvents can use separately, also multiple mixing can be used.
Printing etchant resist 11 does not then preferably use water-miscible organic solvent, and uses water-insoluble organic solvent if can dissolve the kind of peeling off fully in water-miscible organic solvent.
Then, make wafer 6, N-N-methyl-2-2-pyrrolidone N-16 is dispersed with for example 2000 rev/mins rotating speed rotation.Then, for example making, the such volatile solvent of ethanol drips on the wafer 6 and makes its drying (with reference to Figure 10).After removing printing etchant resist 11, also rotating wafer 6 is sprayed N-N-methyl-2-2-pyrrolidone N-16, can almost completely remove being mixed in particulate component in the printing etchant resist 11, that be insoluble to N-N-methyl-2-2-pyrrolidone N-16 like this.Then, wafer 6 be impregnated in the acetone equal solvent, remove diaphragm 12 (with reference to Figure 11).Can make wafer 6 attenuates but the thick state of maintenance peripheral part by above operation.
At this,, particulate component 18 minute quantities that are included in sometimes in the printing etchant resist 11 remain on the wafer 6.Especially, when particulate component 18 was silicon, owing to the interaction with wafer 6 causes absorption, particulate component 18 easily remained on the surface of wafer 6.Like this, if particulate component 18 keeps Restzustand, carry out subsequent processing, then particulate component 18 might pollute manufacturing installation.When forming circuit on wafer 6, when existing impurity to inject (when ion injects), particulate component 18 becomes mask, evenly the problem of implanted dopant.
When being necessary to remove particulate component 18,, can use plasma-etching apparatus to carry out plasma etching.Figure 12 and Figure 13 are the key diagrams that the plasma-etching apparatus structure schematically is described.Plasma-etching apparatus shown in Figure 12 is called the barrel shape device, by RF power supply 19, and gas inlet 20, electrode 21,22,, chamber 23, exhaust outlet 24 and chip support 25 constitute.Plasma-etching apparatus shown in Figure 13 is called the parallel plate-type device, by RF power supply 26, and gas inlet 27, exhaust outlet 28, chamber 29 and electrode 30,31 constitute.
The plasma-etching apparatus of barrel shape once can be handled multi-disc wafer 6, therefore, and the treatment effeciency height.But it is uneven that the etching precision takes place between multi-disc wafer 6 sometimes, or it is uneven that the etching precision takes place in the face of 1 wafer 6.On the other hand, the plasma-etching apparatus of parallel plate-type is handled wafer 6 piecewise, and therefore, efficient is low, but its precision height.
The plasma-etching apparatus that present embodiment is used can be any one of barrel shape or parallel flat formula.If use the Etaching device of plasma, also can be the device of other structures.
Etching gas uses for example at carbon tetrafluoride (CF
4) the middle mist that adds 10% oxygen.Except carbon tetrafluoride (CF
4) in addition, etching gas also can use octafluorocyclobutane (C
4F
8), sulphur hexafluoride (SF
6), bromotrifluoromethane 1301 (CBrF
3), chlorine (Cl
2), silicon tetrachloride/chlorine (SiCl
4/ Cl
2), xenon difluoride (XeF
2) to wait halogen be gas.Above-mentioned halogen is also can contain oxygen or argon gas in the gas.
In the above description,, rotating wafer 6 is sprayed resist remover (N-N-methyl-2-2-pyrrolidone N-16) (with reference to Fig. 9), still, also can remove printing etchant resist 11 with method in addition for removing printing etchant resist 11.Figure 14 and Figure 15 are the key diagrams of other modes of the removal operation of expression printing etchant resist.For example, as shown in figure 14, a part of erectting rotating wafer 6 be impregnated in the remover of N-N-methyl-2-2-pyrrolidone N-16 resists such as grade.Like this, except the use amount of the remover that can reduce resist, can also improve the removal efficient of printing etchant resist 11 by the swing of rotation.
As shown in figure 15, also entire wafer 6 can be impregnated in the remover of N-N-methyl-2-2-pyrrolidone N-16 resists such as grade.According to the method, do not need to make wafer 6 rotations, therefore, can simplify the structure of resist stripper.After making printing etchant resist 11 swellings, peel off when time-consuming, also the remover of resist can be heated to its boiling point or the temperature below the flash-point, or from around carry out the ultrasonic vibration processing.
As mentioned above, the manufacture method of the semiconductor device that relates to according to execution mode 1 can use cheap printing apparatus 100 to form pattern with high precision.Therefore, compare with adopting photoetching process, low to the investment of manufacturing installation.Compare with adopting photoresist, do not need photo-mask process, can reduce work hours simplified manufacturing technique.In addition,, the kind of the solvent and the reagent of use can be reduced, manufacturing cost can be reduced because man-hour is few.
After removing printing etchant resist 11, the remover that sprays resist disperses the particulate component 18 in the printing etchant resist 11, or utilizes plasma-etching apparatus to remove particulate component 18, thus, can use the printing anticorrosive additive material 9 that has added particulate component 18.Therefore, can realize pattern with high precision with low cost.
In execution mode 1, the manufacturing process of the mask when carrying out wafer 6 thin layers to using the printing resist to form describes.Below in Shuo Ming the execution mode 2, the mask when using the printing resist to form to wafer 6 implanted dopants, or the manufacturing process when forming the mask of wiring usefulness on wafer 6 surfaces describes.The structure identical with execution mode 1 is marked with same-sign, detailed.
Figure 16～Figure 22 is the key diagram of a part of the manufacture method of the semiconductor device that relates to of expression execution mode 2.Figure 16 is the general view of wafer 6.As shown in figure 16, wafer 6 usefulness position line L are divided into the zone of a plurality of chips 33.Figure 17 is the profile of the part of the square A encirclement among Figure 16.During the mask when forming, used, as shown in figure 17, on wafer 6, form after the oxide-film 34, form the printing etchant resist 11 of desired pattern thereon wafer 6 implanted dopants.After etchant resist 11 carries out etching as mask to oxide-film 34 with printing, remove printing etchant resist 11.Then, be mask with oxide-film 34, form diffusion zone 35 shown in dotted line.
Figure 18 is the profile of the part of the square B encirclement among Figure 16.Using the printing resist to form mask when forming distributions on wafer 6 surfaces, on wafer 6, form after the metal film, form the printing etchant resist 11 of desired pattern thereon.Then, as mask metal film is carried out etching, form distribution 36 with printing etchant resist 11.
Below, the manufacturing process of the mask situation when forming wafer 6 implanted dopants to use printing resist is elaborated.At first, on the surface of wafer 6, form oxide-film 34.Then, use the printing apparatus 100 identical, comprise particulate component and have thixotropic printing anticorrosive additive material 9 with the transfer printing on oxide-film 34 of desirable pattern with execution mode 1.At this moment, on the screen net structure 2 of printing apparatus 100, as one man paste and pay an emulsion 3 with the pattern of hectographic printing resist 9.Then, printing anticorrosive additive material 9 is carried out heat treated, form printing etchant resist 11.Then, be that mask carries out etching with printing etchant resist 11, that removes oxide-film 34 does not need part (with reference to Figure 19).
Then, from the remover of 15 pairs of rotations of discharge nozzle wafer, 6 one side injections as N-N-methyl-2-2-pyrrolidone N-16 resists such as grade, make on one side discharge nozzle 15 between the central portion of wafer 6 and peripheral part, move the resinous principle of the printing etchant resist 11 on the removed wafer 6 (with reference to Figure 20, Figure 21).And, after removing resinous principle, also make wafer 6 rotations, N-N-methyl-2-2-pyrrolidone N-16 is dispersed.When desiring to dry in the short time, the high organic solvent of volatility that also can after removing printing etchant resist 11, drip (for example ethanol etc.).Residual when particulate component is arranged on the wafer 6 after removing printing etchant resist 11, remove particulate component with plasma-etching apparatus.Then, as the mask implanted dopant, on wafer 6, form diffusion zone 35 (with reference to Figure 22) with oxide-film 34.
As mentioned above, the manufacture method of the semiconductor device that relates to according to execution mode 2 can access the effect as execution mode 1.
Figure 23 represents flow chart one example of manufacturing method for semiconductor device of the present invention.
At step S1, will be as the wafer configuration that is printed object at the screen net structure back side.
In an embodiment of the present invention, described screen net structure is provided with the 1st zone that resist can pass through and the 2nd zone that stops resist to pass through, and described the 1st zone forms desirable pattern.
At step S2, will print the anticorrosive additive material screen net structure surface of dripping.
At step S3, with the transfer printing of described printing anticorrosive additive material on wafer.
In an embodiment of the present invention, on described screen net structure, place the anticorrosive additive material that comprises particulate component, make this screen net structure of squeegee crimping on one side, make the described object that is printed of this screen net structure contact, move described squeegee on one side, at the described anticorrosive additive material that is coated with the pattern suitable on the object that is printed with described the 1st zone.
At step S4, make described printing anticorrosive additive material sclerosis to form etchant resist.
In an embodiment of the present invention, heat-treat, form etchant resist coating the described anticorrosive additive material that is printed on the object.
At step S5, on wafer, form diaphragm.
At step S6, with described etchant resist as mask, processed wafer.
At step S7, remove described etchant resist/diaphragm.
At step S8, in an embodiment of the present invention,, remove residuing in the described particulate material that is printed on the object of removing etchant resist by plasma etching.
Above with reference to description of drawings embodiments of the invention, but the present invention is not limited to the foregoing description.Can do all changes in the technology of the present invention thought range, they all belong to protection scope of the present invention.For example, in the above-described embodiments, enumerate wafer and describe, but the present invention is not limited thereto, also can be that other are printed object as being printed object.
For example, in the flow chart of above-mentioned Figure 23,, on wafer, form diaphragm, but the present invention is not limited thereto at step S5,, also can not form diaphragm.
Have again, in above-mentioned steps S8,, remove residuing in the described particulate material that is printed on the object of removing etchant resist, but the present invention is not limited thereto, also can according to circumstances not carry out this step by plasma etching.
The possibility of utilizing on the industry
The manufacture method of the semiconductor device that the present invention relates to as mentioned above, is for forming high-precision at semiconductor wafer Degree pattern occasion is useful, is specially adapted to make the semiconductor wafer thin layer or forms diffusion on the surface of semiconductor device The occasion of zone or distribution.
Claims (11)
1. the manufacture method of a semiconductor device is characterized in that, described manufacture method comprises:
Arrangement step will be printed object and be configured under the screen net structure, and described screen net structure is provided with the 1st zone that resist can pass through and the 2nd zone that stops resist to pass through, and described the 1st zone forms desirable pattern;
Painting process, on described screen net structure, place the anticorrosive additive material that comprises particulate component, make this screen net structure of squeegee crimping on one side, make the described object that is printed of this screen net structure contact, move described squeegee on one side, at the described anticorrosive additive material that is coated with the pattern suitable on the object that is printed with described the 1st zone;
Form operation, heat-treat, form etchant resist coating the described anticorrosive additive material that is printed on the object;
Manufacturing procedure as mask, is processed the described object that is printed with described etchant resist; And,
The 1st removes operation, and the described object that is printed after processing is removed described etchant resist.
2. the manufacture method of semiconductor device as claimed in claim 1 is characterized in that,
The described object that is printed is a semiconductor wafer;
Described arrangement step is that described semiconductor wafer is configured under the screen net structure, and described screen net structure is provided with the 1st zone that resist can pass through and the 2nd zone that stops resist to pass through, and described the 1st zone forms desirable pattern;
Described painting process is placed the anticorrosive additive material that comprises particulate component on described screen net structure, make this screen net structure of squeegee crimping on one side, make this screen net structure contact described semiconductor wafer, move described squeegee on one side, on described semiconductor wafer, be coated with the anticorrosive additive material of the pattern suitable with described the 1st zone;
Described formation operation is heat-treated the anticorrosive additive material of coating on the described semiconductor wafer, forms etchant resist;
Described manufacturing procedure as mask, is selectively ground described semiconductor wafer by etching with described etchant resist;
The described the 1st removes the described semiconductor wafer of operation after the processing removes described etchant resist.
3. the manufacture method of semiconductor device as claimed in claim 1 is characterized in that,
The described object that is printed is the semiconductor wafer that the surface is formed with dielectric film;
Described arrangement step is that described semiconductor wafer is configured under the screen net structure, and described screen net structure is provided with the 1st zone that resist can pass through and the 2nd zone that stops resist to pass through, and described the 1st zone forms desirable pattern;
Described painting process is placed the anticorrosive additive material that comprises particulate component on described screen net structure, make this screen net structure of squeegee crimping on one side, make this screen net structure contact described semiconductor wafer, move described squeegee on one side, on described semiconductor wafer, be coated with the anticorrosive additive material of the pattern suitable with described the 1st zone;
Described formation operation is heat-treated the anticorrosive additive material of coating on the described semiconductor wafer, forms etchant resist;
Described manufacturing procedure as mask, is selectively removed described dielectric film by etching with described etchant resist;
The described the 1st removes the described semiconductor wafer of operation after the processing removes described etchant resist;
Comprise that also diffusion zone forms operation, on the described semiconductor wafer of removing described etchant resist, as mask, inject ion and heat-treat the formation diffusion zone with described dielectric film.
4. the manufacture method of semiconductor device as claimed in claim 1 is characterized in that,
The described object that is printed is the semiconductor wafer that is formed with conducting film on dielectric film;
Described arrangement step is that described semiconductor wafer is configured under the screen net structure, and described screen net structure is provided with the 1st zone that resist can pass through and the 2nd zone that stops resist to pass through, and described the 1st zone forms desirable pattern;
Described painting process is placed the anticorrosive additive material that comprises particulate component on described screen net structure, make this screen net structure of squeegee crimping on one side, make this screen net structure contact described semiconductor wafer, move described squeegee on one side, on described semiconductor wafer, be coated with the anticorrosive additive material of the pattern suitable with described the 1st zone;
Described formation operation is heat-treated the anticorrosive additive material of coating on the described semiconductor wafer, forms etchant resist;
Described manufacturing procedure as mask, is selectively removed described conducting film by etching with described etchant resist, forms distribution;
The described the 1st removes the described semiconductor wafer of operation after the processing removes described etchant resist.
5. as the manufacture method of each described semiconductor device in the claim 1～4, it is characterized in that the described the 1st removes operation removes solvent to the described object injection resist that is printed of rotation in the horizontal direction, removes described etchant resist.
6. as the manufacture method of each described semiconductor device in the claim 1～4, it is characterized in that described the 1st removal operation is that the described object that is printed be impregnated in the resist removal solvent, removes described etchant resist.
7. as the manufacture method of each described semiconductor device in the claim 1～4, it is characterized in that described the 1st removal operation is that the described object that is printed that impregnated in resist removal solvent is rotated, and removes described etchant resist.
8. as the manufacture method of each described semiconductor device in the claim 5～7, it is characterized in that it is more than the 8 weight % that described resist is removed the solubility of solvent in water.
9. as the manufacture method of each described semiconductor device in the claim 1～4, it is characterized in that described anticorrosive additive material has thixotropy.
10. as the manufacture method of each described semiconductor device in the claim 1～4, it is characterized in that, comprise that also the 2nd removes operation, will residue in the described particulate material that is printed object of having removed etchant resist by plasma etching and remove.
11. the manufacturing installation of a semiconductor device is characterized in that, described manufacturing installation comprises,
Collocation mechanism will be printed object and be configured under the screen net structure, and described screen net structure is provided with the 1st zone that resist can pass through and the 2nd zone that stops resist to pass through, and described the 1st zone forms desirable pattern;
Coating mechanism, on described screen net structure, place the anticorrosive additive material that comprises particulate component, be provided with squeegee, make described this screen net structure of squeegee crimping on one side, make the described object that is printed of this screen net structure contact, move described squeegee on one side, at the described anticorrosive additive material that is coated with the pattern suitable on the object that is printed with described the 1st zone;
Form mechanism, heat-treat, form etchant resist coating the described anticorrosive additive material that is printed on the object;
Organisation of working as mask, is processed the described object that is printed with described etchant resist; And,
The 1st removal mechanism, the described object that is printed after processing is removed described etchant resist.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006195515A JP5162854B2 (en) | 2006-07-18 | 2006-07-18 | Manufacturing method of semiconductor device |
| JP2006195515 | 2006-07-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101110352A true CN101110352A (en) | 2008-01-23 |
| CN100541714C CN100541714C (en) | 2009-09-16 |
Family
ID=39042347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007101379354A Expired - Fee Related CN100541714C (en) | 2006-07-18 | 2007-07-17 | The manufacture method of semiconductor device and manufacturing installation thereof |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5162854B2 (en) |
| CN (1) | CN100541714C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109712926A (en) * | 2017-10-25 | 2019-05-03 | 中芯国际集成电路制造(上海)有限公司 | A kind of manufacturing method of semiconductor devices |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7360768B2 (en) | 2017-12-14 | 2023-10-13 | パナソニックＩｐマネジメント株式会社 | Placement support system, placement support method, and program |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6319541A (en) * | 1986-07-11 | 1988-01-27 | Sumitomo Metal Ind Ltd | Method and device for checking pattern |
| JPS6380253A (en) * | 1986-09-24 | 1988-04-11 | Nippon Sheet Glass Co Ltd | Resist composition for forming pattern |
| JPH0513937A (en) * | 1991-07-02 | 1993-01-22 | Taiyo Ink Seizo Kk | Manufacture of printed wiring board |
| JPH05127378A (en) * | 1991-11-01 | 1993-05-25 | Kansai Paint Co Ltd | Photopolymerizable composition |
| JP3339375B2 (en) * | 1997-08-28 | 2002-10-28 | 株式会社デンソー | Resist stripping apparatus and resist stripping method |
| JPH11106664A (en) * | 1997-10-02 | 1999-04-20 | Hitachi Chem Co Ltd | Resin paste, formation of film, electronic part and semiconductor device |
| JPH11347478A (en) * | 1998-06-05 | 1999-12-21 | Hitachi Chem Co Ltd | Production of pattern film and electronic parts |
| JP2001183850A (en) * | 1999-12-27 | 2001-07-06 | Sumitomo Chem Co Ltd | Remover composition |
| JP2001298253A (en) * | 2000-04-17 | 2001-10-26 | Sony Corp | Base film for printing, method of printing using the same, and wiring board manufactured thereby |
| JP2003178948A (en) * | 2001-12-11 | 2003-06-27 | Fuji Electric Co Ltd | Method for forming photoresist film |
| DE10222609B4 (en) * | 2002-04-15 | 2008-07-10 | Schott Ag | Process for producing structured layers on substrates and methodically coated substrate |
| JP2006038999A (en) * | 2004-07-23 | 2006-02-09 | Sumitomo Electric Ind Ltd | Method for forming conductive circuit by using laser irradiation, and conductive circuit |
| JP2007059668A (en) * | 2005-08-25 | 2007-03-08 | Fuji Electric Device Technology Co Ltd | Manufacturing method of semiconductor device |
-
2006
- 2006-07-18 JP JP2006195515A patent/JP5162854B2/en not_active Expired - Fee Related
-
2007
- 2007-07-17 CN CNB2007101379354A patent/CN100541714C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109712926A (en) * | 2017-10-25 | 2019-05-03 | 中芯国际集成电路制造(上海)有限公司 | A kind of manufacturing method of semiconductor devices |
| CN109712926B (en) * | 2017-10-25 | 2021-01-22 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5162854B2 (en) | 2013-03-13 |
| CN100541714C (en) | 2009-09-16 |
| JP2008027967A (en) | 2008-02-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102472985B (en) | Resist stripping solution composition, and method for stripping resist by using same | |
| TWI503636B (en) | Compositions and methods for removing organic substances | |
| JP3946428B2 (en) | Photoresist stripper composition and photoresist strip method using the same | |
| CN103336412B (en) | Novel photoresist stripper and application technology thereof | |
| JP2007178589A (en) | Cleaning liquid for photolithography and cyclic usage of the same | |
| KR100663354B1 (en) | Methods of fabricating semiconductor device having photoresist removing process using photoresist stripping composition | |
| JP5885046B1 (en) | Resist stripper | |
| CN100541714C (en) | The manufacture method of semiconductor device and manufacturing installation thereof | |
| CN102376543A (en) | Development method in semiconductor component manufacture process | |
| JP4846301B2 (en) | Thin film transistor substrate manufacturing method and stripping composition | |
| CN103293883A (en) | Photoresist stripping liquid composition and application thereof | |
| US20060124596A1 (en) | Thinner composition, method of preparing the same and method of recovering the same | |
| KR100652044B1 (en) | Apparatus For Stripping | |
| KR101174775B1 (en) | method for manufacturing of printing plate | |
| KR101207069B1 (en) | Apparatus for roll printing | |
| JP2009016464A (en) | Substrate cleaning apparatus and substrate cleaning method | |
| CN101303530A (en) | Preparation exhaust device for slit coating machine | |
| JP5885043B1 (en) | Resist stripper and method for producing the same | |
| JP3194245B2 (en) | Processing method for substrate on which amorphous silicon layer is formed | |
| JP2007059668A (en) | Manufacturing method of semiconductor device | |
| US20050051196A1 (en) | Developer dispensing apparatus with adjustable knife ring | |
| US7447559B2 (en) | Apparatus and method of forming a photoresist pattern, and repair nozzle | |
| TW594440B (en) | Apparatus and method for developing an LCD | |
| US10490403B2 (en) | Method for masking a surface comprising silicon oxide | |
| KR100901477B1 (en) | Method and apparatus for developing a photoresist layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: FUJI MOTOR SYSTEM CO., LTD. Free format text: FORMER OWNER: FUJI MOTOR ELECTRONICS TECHNOLOGY CO., LTD. Effective date: 20100520 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20100520 Address after: Tokyo, Japan Patentee after: Fuji Electric Systems Co., Ltd. Address before: Tokyo, Japan Patentee before: Fuji Electronic Device Technol |
|
| ASS | Succession or assignment of patent right |
Owner name: FUJI ELECTRIC CO., LTD. Free format text: FORMER OWNER: FUJI ELECTRIC SYSTEMS CO., LTD. Effective date: 20110916 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20110916 Address after: Kanagawa Patentee after: Fuji Electric Co., Ltd. Address before: Tokyo, Japan Patentee before: Fuji Electric Systems Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090916 Termination date: 20170717 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |