CN101109095A - Process and device for treating flat brittle substrate - Google Patents
Process and device for treating flat brittle substrate Download PDFInfo
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- CN101109095A CN101109095A CNA2007101361469A CN200710136146A CN101109095A CN 101109095 A CN101109095 A CN 101109095A CN A2007101361469 A CNA2007101361469 A CN A2007101361469A CN 200710136146 A CN200710136146 A CN 200710136146A CN 101109095 A CN101109095 A CN 101109095A
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- electromotive force
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/005—Contacting devices
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
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- Condensed Matter Physics & Semiconductors (AREA)
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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- Manufacturing & Machinery (AREA)
- Electroplating Methods And Accessories (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a method and a device for processing the flat brittle substrate. The treatment process involves passing the substrate (2) horizontally through a bath of treatment fluid (14) with a contact surface in contact with a contact device (7) to apply electric potential different from that of a counter-electrode in the bath. The treatment fluid is blown or sucked away from the contact region by a blowing or sucking device (11) fitted to the contact device. The blowing or sucking device blows or sucks the contact region between the contact device and the substrate.
Description
Technical field
The present invention relates to a kind of method that is used to handle especially for flat, the frangible matrix of semi-conductor industry and solar industry, wherein, guide described matrix flatly to walk and pass through body lotion, wherein, at least one contact surface of described matrix here contacts with contact device, and making this contact surface have certain electromotive force thus, this electromotive force is different with the electromotive force of counter electrode in being arranged in body lotion
And
A kind of device that is used to handle especially for flat, the frangible matrix of semi-conductor industry and solar industry comprises:
A) a usefulness body lotion is filled into the bath container of certain liquid (Spiegel);
B) e Foerderanlage utilizes this e Foerderanlage can guide described matrix flatly to walk and passes through body lotion;
C) one handle power supply;
D) at least one contact device, the contact surface that described contact device and at least one are arranged on the described matrix contacts, and this moment, this contact device made described contact surface extremely link to each other with one of processing power supply
E) at least one counter electrode, this counter electrode be arranged in the body lotion and with handle power supply another extremely link to each other.
Background technology
In semi-conductor industry and solar industry, often various dissimilar, very flat and thin matrixes such as silicon chip (wafer (Wafer)), silicon plate and sheet glass are carried out wet treatment.In this case, particularly interested in the electrochemical treatment of this matrix.In this processing, electricity is connected described matrix, and it is carried out electrolysis treatment, for example cleans, plating or etching.In electrochemical treatment, matrix surface can connect into negative electrode or anode.In order to electroplate, matrix surface to be polarized to negative electrode, and, then it to be polarized to anode in order to carry out etching or cleaning.
At this moment, only require usually flat matrix down side when passing the body lotion that also is furnished with the corresponding utmost point is carried out electrochemical treatment, and connect by the contact surface on the described matrix side up.Here described contact surface is contacted with a contact device that extremely links to each other of handling power supply by one.Such problem is arranged here, promptly described contact device itself has also been carried out undesirable electrochemical treatment, that is, for example particularly electroplate.
By DE19628784A and the known roller contact device of DE19633797A.Must regularly carry out metallization removal for contact device as described herein.For example taking place under the gold-plated situation, be difficult to or may do not carrying out the metallization removal of complexity described contact device.Therefore, can't carry out described electrolysis metallization removal as EP0578699B1.In this case but must periodically change described contact device.In known equipment, approximately just must carry out this replacing every 12 to 24 hours.This is very time-consuming, and can cause production unit to be shut down for a long time.
Walk the method for matrix surface being carried out one-sided processing with level by WO 2005/093788A1 also known a kind of being used for.Here, just to the downside of walking matrix and to also have outer upper limb to carry out in case of necessity wetting.But if the matrix slightly raised, then in practice, for accurate smooth matrix, this is difficult to realize, perhaps can't realizes at all very much.
Summary of the invention
The objective of the invention is, a kind of method and apparatus that starts described type is provided, in described method or device, can reduce greatly, particularly to the metallization of contact device the undesirable electrochemical treatment of contact device.
Aspect method, realize described purpose like this, that is, in the contact area between contact device and matrix body lotion is blown away or siphons away.
Unlike the prior art, according to the present invention, matrix immerses in the body lotion fully, but just is positioned under the liquid level of body lotion with short distance.Like this, by means of blowing or suction unit just can keep in touch the essentially no body lotion of device in a dynamic process.Because do not have or have only contact seldom this moment between contact device and the body lotion, the undesirable reaction that takes place between contact device and the body lotion is also very limited.
Under the simplest situation,, then adopt air as the gas that is used to blow if the existence of oxygen can not cause problem in the air.
But under many circumstances, body lotion is responsive for airborne oxygen, therefore adopts rare gas element, and preferably nitrogen is as described gas.
, can avoid basically according to measure of the present invention by above-mentioned, be obviously to reduce the undesirable electrochemical change of contact device at least, particularly metallization.If the also residual interference variation that remaining contact device is arranged this moment, particularly metallization, can select a kind of like this method modification, wherein, follow the tracks of the movement path of matrix, and just apply the needed electromotive force of processing matrix to described at least one contact device in the contacted time at the contact surface of contact device and matrix.Utilize this mode, can obviously shorten the time that undesirable electrochemical action takes place on described contact device.
In a lot of electrochemical treatment, can reaction be reversed by reversing polarity.In this case, described method can be carried out like this, that is, contact device not with the contact surface of matrix in the contacted time, apply one second electromotive force to described at least one contact device, described electromotive force is suitable for making the reaction that moves by first electromotive force when handling to reverse.For metallized situation, this means, in contact device does not abut in time on the contact surface of matrix,, make the metal deposit dissolving on the contact device by correspondingly selecting electromotive force.Can further prolong the work-ing life of contact device by this way.
Aspect device, realize described purpose like this, that is:
F) described at least one contact device is equipped with at least one air blowing or suction unit, the contact area between the contact surface that described air blowing or suction unit are arranged to can blow sky or find time contact device and matrix.
The favourable improvement project of device of the present invention provides in claim 9 and 10.The advantage of the method according to this invention and improvement project thereof is corresponding to the advantage of method of the present invention recited above and various flexible programs thereof.
Description of drawings
By means of accompanying drawing one embodiment of the present of invention are elaborated below; Wherein
Fig. 1 goes out to be used for the metallic conductor that is applied on the silicon substrate is brought into the device that electroplating is strengthened with schematic side illustration;
Fig. 2 illustrates the thin portion enlarged view of Fig. 1.
Embodiment
In order to make solar cell, used thickness is about the silicon plate of 0.2mm, and described silicon plate is the thin metallic conductance body band (Leiterzug) that a side of " sun power activity (sonnenaktiv) " has evaporation afterwards.The bed thickness of to 1 to 20 μ m must be strengthened/thicken to described conductor belt with plating.Reinforcement material can be copper, tin, silver or golden.The opposite side of matrix be required for this reason, for example be the contact surface of contact bar and/or contact window form, the charged connection of electric conductor of evaporation on described contact surface and " sun power activity " side.
Fig. 1 illustrates the overall device of representing with label 1, can utilize this device that the evaporation conductor belt of this silicon substrate is strengthened.In Fig. 1, three this silicon substrates are shown, and represent with 2a, 2b and 2c.Having a plurality of roller delivery systems of driving rolls 3a, 3b, 3c, 3d that are subjected to by means of one guides described silicon substrate 2a, 2b, 2c to pass plating bath 14.Throughput direction is by arrow 4 expressions.
The liquid level 15 of body lotion 14 at least slightly above silicon substrate 2a, 2b, 2c, for example above it 0.1 to 10 millimeter.Be that silicon substrate 2a, 2b, 2c immerse in the body lotion 14 when passing plating bath fully.
The anode 5 of one plate shape is along the movement path of silicon substrate 2a, 2b, 2c and extension thereunder, and described anode links to each other with the positive pole of electroplating power supply 6.Here reinforcement metal is copper, tin or silver, can use soluble sacrificial anode 5 thus.But if gold plating bath then will utilize insoluble anode 5 work.
Must make silicon substrate 2a, 2b, the last conductor belt to be strengthened of 2c be in cathode potential.This can realize by means of contact roller 7a, 7b, 7c, 7d, described contact roller is arranged in silicon substrate 2a, 2b, 2c and conveying roller 3a, 3b, a side that 3c, 3d are relative, and, be pressed against on silicon substrate 2a, 2b, 2c one side up, that have contact surface with very little pressure preferred spring.Each described contact roller 7a, 7b, 7c, 7d link to each other with the negative pole of electroplating power supply 6 by controllable switch 8a, 8b, 8c and the 8d of an electronics.Described electronic switch 8a, 8b, 8c, 8d obtain its control signals by equipment control device 9, utilize the described switch of described control signal can open or closed again.
Observe along throughput direction 4, be provided with transmitter 10, anterior border and the antemarginal process of described transmitter can detect silicon substrate 2a various, process from the side, 2b and 2c in the front of the first contact roller 7a.Transmitter 10 should (process) be notified equipment control device 9 constantly.Because described equipment control device has about the movement velocity of silicon substrate 2a, 2b, 2c and the knowledge of equipment geometric data, this equipment control device can calculate all silicon substrate 2a, 2b, the exact position of 2c in plating bath at any time.Therefore, described equipment control device 9 particularly can detect which contact roller 7a, 7b, 7c, 7d and just be in electricity with the contact surface of silicon substrate 2a, 2b, 2c and connect, and which does not have.Because the back also will describe in detail, described equipment control device 9 guarantees to have only affiliated contact roller 7a, 7b, 7d just to be in electric anastomosing electronic switch 8a, 8b, 8d connection with a this contact surface.On the contrary, affiliated contact roller 7c does not open with the contacted electronic switch 8c of the contact surface of silicon substrate 2a, 2b, 2c.
Observe along throughput direction 4, be provided with a blowing device 11a, 11b, 11c, 11d in the front of each contact roller 7a, 7b, 7c, 7d.As illustrating best by Fig. 2, blowing device 11 has the form of tubular type blow-out nozzle, can carry the gas that is in pressure under for described blow-out nozzle along the direction of arrow 12, and described blow-out nozzle along the direction of arrow 13 with gas to silicon substrate 2 upsides, be positioned near corresponding contact roller 7 zones and load effect.
As top illustrated, before access arrangement 1, like this silicon substrate 2a, 2b, 2c are carried out preliminary treatment: extremely thin metallic conductor band is set for described silicon substrate in " sun power activity " side by evaporation.Opposite side at silicon substrate 2a, 2b, 2c applies contact surface, and described contact surface is connected with described conductor belt.Then described silicon substrate 2a, 2b, 2c are laid in the conveying roller system, pass narrow slit in the wall portion of device 1 unshowned housing at two side directed its.
Then, should follow the tracks of the path that each silicon substrate 2 passes device 1.
Described matrix 2 enters plating bath by the above-mentioned housing slit that is positioned at body lotion face 15 belows.Its anterior border is through transmitter 10, and thus, described transmitter is to the equipment control device relevant moment of 9 notices.At this constantly, electronic switch 8a, 8b, 8c and the 8d of all contact roller 7a, 7b, 7c, 7d also are in open mode, so contact roller 7a, 7b, 7c and 7d be no-voltage, and do not form metal deposition on contact roller.
Now, equipment control device 9 calculates according to the movement velocity of its known silicon substrate 2 and transmitter 10 and along the distance between first contact roller 7a of throughput direction 4, and when contact roller 7a begins to contact with the contact surface of silicon substrate 2.At this constantly, equipment control device 9 makes electronic switch 11b closure, thereby makes contact roller 7a be in certain electromotive force, and can begin to electroplate intensifies process.
As shown in Figure 2, the blowing device 11a that matches with the first contact roller 7a blows away the body lotion in the contact roller 7a near zone on the side that silicon substrate 2 makes progress, thereby even applied voltage in this moment, contact roller 7a is also just metallized not obviously.Different therewith, silicon substrate 2a one side down, that have conductor belt to be strengthened then is arranged in body lotion fully, thus the plating intensifies process that here can wish.
In time in the meantime, transmitter 10 detects silicon substrate 2a and is positioned at the process at the edge of back along direction of motion, and with this event notice equipment control device 9.Described equipment control device recalculates according to its known data, and when the contact surface on the silicon substrate 2a passes through in the past on contact roller 7a, and at this moment by opening the power supply of switch 8a interruption to contact roller.
In the zone of contact roller 7b, 7c and 7d, repeat this process.
In practice, do not have only an one silicon substrate 2a to pass described device 1.But as shown in Figure 1, carry a plurality of silicon substrate 2a, 2b, 2c by described device 1 with less to each other spacing.In this case, carry out the open and close of electronic switch 8a, 8b, 8c, 8d similarly.A kind of like this state shown in Fig. 1, in this state, the contact roller 7a of the first silicon substrate 2a roughly contacts in the central authorities of contact surface, thus, affiliated switch 8a closure.For the second silicon substrate 2b, corresponding contact roller 7b has been in the Background Region of contact surface along direction of motion; Affiliated switch 8b still still is closed.But the 3rd contact roller 7c does not contact with the contact surface of silicon substrate 2a, 2b, 2c, and therefore, affiliated switch 8c opens.
Although do not have silicon substrate near the 3rd roller 7c, affiliated blowing device 11c still works.This blowing device blows out one " pit (Delle) " in body lotion 14, the lower region of contact roller 7c is positioned at this pit, and can not contact with body lotion 14.Switch 11d must open; But open this switch additional security measures can be provided, because the splash of body lotion 14 also may arrive contact roller 7c.
In Fig. 1, be positioned at the initiation region of the contact surface of the silicon substrate 2c here along the 4th contact roller 7d of direction of motion.Therefore, affiliated electronic switch 8d is closed.
If the chemical that respective handling technology is adopted allows, then can adopt air simply as the gas that flows to blowing device 11a, 11b, 11c, 11d.If but plating bath is responsive to airborne oxygen reaction, then selects nitrogen as described gas.Supplied to blowing device 11a, 11b, 11c, 11d by gas blower in this case, described gas blower aspirates the inside of installing 1 housing, to guarantee circular flow thus.The entire treatment chamber is under the slight nitrogen overpressure, thereby can suppresses the entering of oxygen in the surrounding environment.
Substitute simple tubulose blowing device 11a, 11b, 11c, 11d, also can adopt Wen (Venturi) nozzle.In this nozzle, increase (anreichern) gas volume with surrounding environment gas by the gas blower motion, improve the total amount of gas thus and raise the efficiency.
The air outlet of blowing device 11a, 11b, 11c, 11d is not necessarily circular.But also it can be designed to surround affiliated contact roller 7a, 7b, the ring of 7c, 7d.
At last, replace to blow, can also keep in touch roller 7a, 7b, 7c, 7d by suction nozzle with battery unit does not have body lotion 14 in the peripheral region on the side up at silicon substrate 2a, 2b, 2c.
Among unshowned in the drawings second embodiment, the contact roller 7 under electronic switch 8 is used to make extremely links to each other with two of electroplating power supply 6 selectively.If corresponding contact roller 7 contacts with the contact surface of silicon substrate 2, then press traditional way and realize being connected with the anodal of electroplating power supply 6; The plating of wishing this moment is strengthened.In contrast, before and after two between the contact surface of the silicon substrates 2 of order, being connected of the negative pole of contact roller 7 and electroplating power supply 6.By this way, the metal deposition that is positioned on the contact roller 7 can be dissolved again, and this can further prolong the work-ing life of contact roller 7.Certainly, this measure just can realize just that for such reinforcement metal this metal can electrolytically dissolve, and can deposit out (ausscheiden) when using gold.
Claims (10)
1. method that is used to handle especially for flat, the frangible matrix of semi-conductor industry and solar industry, wherein, guide described matrix flatly to walk and pass through body lotion, wherein, at least one contact surface of described matrix here contacts with contact device, and making this contact surface have certain electromotive force thus, this electromotive force is different with the electromotive force of counter electrode in being arranged in body lotion
It is characterized in that, in the contact area between contact device (7) and matrix (2) body lotion is blown away or siphons away.
2. by the method for claim 1, it is characterized in that, adopt air as the gas that is used to blow.
3. by the method for claim 1, it is characterized in that, adopt nitrogen as the gas that is used to blow.
4. by each method of aforesaid right requirement, it is characterized in that, follow the tracks of the movement path of matrix (2), and just apply the needed electromotive force of processing matrix (2) at least one contact device (7) the contacted time at the contact surface of contact device (7) and matrix (2).
5. by each method of aforesaid right requirement, it is characterized in that, contact device (7) not with the contact surface of matrix (2) in the contacted time, apply one second electromotive force to described at least one contact device (7), described electromotive force is suitable for making the reaction that moves by first electromotive force when handling to reverse.
6. device that is used to handle especially for flat, the frangible matrix of semi-conductor industry and solar industry comprises:
A) a usefulness body lotion is filled into the bath container of certain liquid;
B) e Foerderanlage utilizes this e Foerderanlage can guide described matrix level to walk and passes through body lotion;
C) one handle power supply;
D) at least one contact device, the contact surface that described contact device and at least one are arranged on the described matrix contacts, and this moment, this contact device made described contact surface extremely link to each other with one of processing power supply
E) at least one counter electrode, this counter electrode be arranged in the body lotion and with handle power supply another extremely link to each other
It is characterized in that,
F) described at least one contact device (7) is equipped with at least one air blowing or suction unit (11), and described air blowing or suction unit are arranged to blow the contact area between the contact surface of sky or contact device of finding time (7) and matrix (2).
7. by the device of claim 6, it is characterized in that, adopt air as the gas that is used to blow.
8. by the device of claim 6, it is characterized in that, adopt nitrogen as the gas that is used to blow.
9. by each device in the claim 6 to 8, it is characterized in that,
A) be provided with position determining means (10), can utilize this position determining means to detect the current position of each matrix (2);
B) be provided with control device (9), this control device only applies the needed electromotive force of processing matrix to described at least one contact device (7) at the contact surface of contact device (7) and matrix (2) in the contacted time according to the output signal of described position determining means (10).
10. press the device of claim 9, it is characterized in that, contact device not with the contact surface of matrix in the contacted time, described control device applies one second electromotive force to described at least one contact device, described electromotive force is suitable for making that the reaction by the operation of first electromotive force reverses when handling.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006033353A DE102006033353B4 (en) | 2006-07-19 | 2006-07-19 | Method and device for treating flat, fragile substrates |
| DE102006033353.5 | 2006-07-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101109095A true CN101109095A (en) | 2008-01-23 |
| CN101109095B CN101109095B (en) | 2011-03-16 |
Family
ID=38830654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101361469A Expired - Fee Related CN101109095B (en) | 2006-07-19 | 2007-07-19 | Process and device for treating flat brittle substrate |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2008025030A (en) |
| CN (1) | CN101109095B (en) |
| DE (1) | DE102006033353B4 (en) |
| PL (1) | PL382902A1 (en) |
| TW (1) | TW200806822A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108368636A (en) * | 2015-12-11 | 2018-08-03 | 奈克斯沃夫有限公司 | Device and method for unilateral etching semiconductor substrate |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1035265C2 (en) * | 2008-04-07 | 2009-10-08 | Meco Equip Eng | Method and device for the electroplating of non-metallic glassy substrates. |
| DE102008026199B3 (en) * | 2008-05-30 | 2009-10-08 | Rena Gmbh | Device and method for electrical contacting of flat material in continuous systems |
| US7955873B2 (en) * | 2009-03-31 | 2011-06-07 | Infineon Technologies Ag | Method of fabricating a semiconductor device |
| DE102009018360A1 (en) * | 2009-04-23 | 2010-11-04 | Rena Gmbh | Electroplating sunny side of non-illuminated solar cells in electrolytic cells of continuous feed system, immersion bath system or cup-plate by rectifier, comprises negatively polarizing solar cell at its electrically conductive rear side |
| DE102009022337A1 (en) * | 2009-05-13 | 2010-11-18 | Gebr. Schmid Gmbh & Co. | Method and device for treating a substrate |
| WO2011026696A1 (en) * | 2009-09-01 | 2011-03-10 | Imec | Method for electrochemical processing of non-flat samples |
| DE102013100805B4 (en) * | 2013-01-28 | 2015-01-22 | Hochschule Offenburg | Wet-chemical treatment plant for the electrochemical coating of flat substrates |
| DE102013219886A1 (en) * | 2013-10-01 | 2015-04-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Apparatus and method for the continuous production of porous silicon layers |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05140797A (en) * | 1991-11-18 | 1993-06-08 | Sumitomo Metal Ind Ltd | Production of continuously electroplated steel strip |
| JPH05320985A (en) * | 1992-05-27 | 1993-12-07 | Kanai Hiroyuki | Method for energizing cathode in continuous electroplating of wire and conductor cathode body |
| US6153064A (en) * | 1998-11-25 | 2000-11-28 | Oliver Sales Company | Apparatus for in line plating |
| JP3284496B2 (en) * | 2000-08-09 | 2002-05-20 | 株式会社荏原製作所 | Plating apparatus and plating solution removal method |
| JP2002161395A (en) * | 2000-11-17 | 2002-06-04 | Tokyo Electron Ltd | Equipment and method for liquid treatment |
| DE10342512B3 (en) * | 2003-09-12 | 2004-10-28 | Atotech Deutschland Gmbh | Device for the electrolytic treatment of electrically conducting structures on strip-like material used in chip cards, price signs or ID cards comprises an arrangement consisting of contact electrodes and an electrolysis region |
-
2006
- 2006-07-19 DE DE102006033353A patent/DE102006033353B4/en not_active Expired - Fee Related
-
2007
- 2007-06-20 TW TW096121975A patent/TW200806822A/en unknown
- 2007-07-11 PL PL382902A patent/PL382902A1/en not_active IP Right Cessation
- 2007-07-17 JP JP2007185775A patent/JP2008025030A/en active Pending
- 2007-07-19 CN CN2007101361469A patent/CN101109095B/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108368636A (en) * | 2015-12-11 | 2018-08-03 | 奈克斯沃夫有限公司 | Device and method for unilateral etching semiconductor substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| PL382902A1 (en) | 2008-01-21 |
| DE102006033353A1 (en) | 2008-01-24 |
| DE102006033353B4 (en) | 2010-11-18 |
| CN101109095B (en) | 2011-03-16 |
| JP2008025030A (en) | 2008-02-07 |
| TW200806822A (en) | 2008-02-01 |
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