CN101108723A - Method for manufacturing silicon chip of ultramicro tension pressure sensor - Google Patents
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- CN101108723A CN101108723A CNA2007100697260A CN200710069726A CN101108723A CN 101108723 A CN101108723 A CN 101108723A CN A2007100697260 A CNA2007100697260 A CN A2007100697260A CN 200710069726 A CN200710069726 A CN 200710069726A CN 101108723 A CN101108723 A CN 101108723A
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Abstract
The invention relates to the fabrication method of the ultra-low-pressure sensor silicon chips, which develops the ultra-low-pressure sensor silicon microchips with high sensitivity under the condition of ensuring the high linear accuracy by adopting the combination of the planar process of silicon and process technology of bulk micromachining, adopting the planar process technology of the integrated circuit and anisotropic erosion of silicon, combining the advantages of the beam diaphragm structure and the plane membrane twin islands structure in the pressure sensor chip design and adopting the twin islands-beam-membrane structure to fully concentrate the stress. The method mainly comprises the steps such as oxidation-dual surface lithography alignment mark- oxidation-lithography back large membrane and lithography facade beam zone-back large membrane and facade beam zone erosion- oxidation-lithography back stress unification zone- back stress unification zone erosion-back glue protection and facade rinse SiO2 layer- oxidation- lithography resistance zone-sensing resistor zone boron dope- lithography heavy boron zone-heavy boron-diffusion formed ohm zone-top and back deposit silicon nitride- lithography pin hole- lithography back small island, lithography back large island-facade aluminum coating, etching back aluminum wire and alloyage-entering the corrosion technology process.
Description
Technical field
The invention belongs to electronic information field, relate in particular to a kind of method for manufacturing silicon chip of ultramicro tension pressure sensor.
Background technology
The development of observation and control technology requires the pressure sensor range more and more littler, and resolution ratio is more and more higher, makes ultra micro pressure pressure sensor more and more important in fields such as scientific experiment, industrial automation control, aerodynamics, meterological.As the high-resolution test in the scientific experiment, aircraft in the aerodynamic studies, guided missile, the Research on Dynamic Characteristic of movable machinery and the design of skyscraper building wind-tunnel etc., the secondary air system of novel thermal technology's boiler in the industry control, air-conditioning, the ultra-clean filtration system, coal mine gas monitoring and controlling system etc., the petroleum gas in metering market, liquefied gas metering etc., all need the high-precision ultra micro pressure pressure sensor of range at hundreds of handkerchiefs, so millimeter level appearance and size, the high sensitivity ultra micro pressure pressure sensor of micron order machining accuracy, the great application and the market share are arranged, indicate the level of a national metrological testing technology.
Early stage silicon pressure sensor generally adopts circular flat film, in the lower range sensor chip is made, then need reduce silicon film thickness.When silicon film thickness is reduced to certain degree, mis-behave on the one hand, nonlinearity erron increases; The silicon resistor junction depth is difficult to control on the other hand, causes uniformity and decrease in yield, and cost rises, and all makes ultra micro pressure pressure sensor seeking the new structure silicon both at home and abroad for this reason.
(Shimazoe M such as Shimazoe, Matsuka Y, Yasukawa A, et al.A specialsilicon diaphragm pressure sensor with high output and high accuracy.Sensors and Actuators, 1982,2:275～282) the island membrane structure that the back side has round island has been proposed, force sensing resistance is produced on the film of annular, be used for making the pressure sensor of low-voltage high-precision, but the film upper stress of this structure changes greatly, to resistance positioning requirements height, device size also is difficult to microminiaturization, is unfavorable for producing in batches.(Hein S such as Hein, Schlichting V, Obermerier E.Piezoresistivesilicon sensor for very low pressure based on the concept of the stressconcentration.Transducers ' 93, Yokohama, Japan, 1993) adopted the beam diaphragm structure that forms by the shallow selective etching in front, a square is arranged in the center of film, respectively there is a beam at the center, four sides of square, the shape and size of beam can have multiple choices, and force sensing resistance is produced on the stress beam.Its main feature is that utilization is superimposed with the film that corrodes from the back side from the beam that front etch forms, because cube being directly proportional of the stiffness coefficient of silicon fiml and thickness, therefore the silicon of Liang Qu is than the silicon in film district thick one times, the stiffness coefficient of Liang Qu is 8 times of stiffness coefficient in film district, obviously existing enough stress concentration effects.Simultaneously, beam diaphragm structure can also utilize the variation of the width of beam to obtain further stress concentration effect.Having developed minimum range with sensor chip behind glass electrostatic bonding encapsulation back Hein etc. is the piezoresistive pressure sensor of 300Pa, adopt the excitation of 2mA constant-current source, the test warm area is-35～85 ℃, and full scale 300Pa is output as 15mV, and nonlinearity erron is lower than 0.2%.Up to the present, external not relevant as yet range is lower than the report of the piezoresistive pressure sensor of 300Pa, and what commercialization maintained the leading position is Honeywell company, and minimum range is 1000Pa in its catalogue.
Summary of the invention
Problem to be solved by this invention provides a kind of method for manufacturing silicon chip of ultramicro tension pressure sensor, and this method can obtain the high sensitivity silicon chip of ultramicro tension pressure sensor.
For solving problem to be solved by this invention, the present invention utilizes the planar technology and the combination of body micromachining technology of silicon, adopt the anisotropic etch of integrated circuit planar technology technology and silicon, advantage in conjunction with beam diaphragm structure and flat film twin islet structure in the pressure sensor chip design, adopt twin islet-beam-membrane structure fully to concentrate stress, guaranteeing under the high linear precision, developed the ultralow minute-pressure pressure sensor silicon of high sensitivity microchip, specifically, method for manufacturing silicon chip of ultramicro tension pressure sensor of the present invention may further comprise the steps:
(1), oxidation: the raw material silicon chip after the strictness cleaning is put into oxidation furnace, and logical oxygen is to the two-sided oxidation of silicon chip, and temperature is 1150 ℃, at first is dry oxidation 10 minutes, and water flowing steam wet oxidation is 30 minutes then;
(2), the dual surface lithography alignment mark: to the silicon chip dual surface lithography after the oxidation, form the double-sided alignment mark, backsizing wherein, pre-bake temperature is 80 ℃, the time is 5 minutes, the front gluing, 80 ℃ of pre-bake temperatures, the time is 10 minutes;
(3), oxidation: to through the silicon chip of dual surface lithography alignment mark once more oxidation so that the frame back side forms about 1 micron SiO
2Layer, temperature is 1150 ℃, at first is dry oxidation 10 minutes, water flowing steam wet oxidation is 2 hours 30 minutes then;
(4), the positive Liang Qu of big film in photoetching back and photoetching;
(5), big film in back and positive Liang Qu corrosion: rinsing is 10 seconds in rare HF acid in 1: 10, with drying up behind the cold deionized water rinsing; In concentration is corrosion 70 minutes among 25% the TMAH (TMAH), and temperature is 50 ℃;
(6), oxidation: logical oxygen is to the two-sided oxidation of silicon chip, and temperature is 1150 ℃, at first is dry oxidation 10 minutes, and water flowing steam wet oxidation is 30 minutes then;
(7), stress unification district, the photoetching back side, front photoresist protection keeps frontside oxide layer;
(8), back side stress unification district corrosion: corrode in 25% TMAH, about 140 minutes, temperature was 50 ℃, corrosion depth is about 12 microns, this degree of depth is suitably adjusted according to the silicon chip original thickness, and during less than 10 microns, gradual angle, garden step appears in frame edge at silicon film thickness;
(9), back side glue protection, the front rinses SiO
2Layer: the back side is protected with photoresist, in photoetching corrosion liquid, rinses positive SiO
2Layer;
(10), oxidation: logical oxygen is to the two-sided oxidation of silicon chip, and temperature is 1150 ℃, at first is dry oxidation 10 minutes, and water flowing steam wet oxidation is 30 minutes then;
(11), photoetching resistance area;
(12) force sensing resistance district boron mixes: resistance area adopts ion beam to inject, and is coated with the secondary photoresist, and keeps the photoresist beyond the resistance area, the masking layer during as ion beam doping; Being equipped with the sheet square resistance with four-point probe measurment is Rs=280 Ω/side～300 Ω/sides;
(13), photoetching concentrated boron area: photoresist protection in the back side keeps back side SiO
2Layer;
(14), dense boron diffuses to form ohmic region: temperature is 980 ℃ when giving deposit, and the time is 30 minutes, test resistance Rs=40 Ω/side ± 10 Ω/sides; Give the later HF acid of deposit and rinsed the surface boron silicon layer about 10 seconds with 1: 10, stand-by through the deionized water rinsing oven dry; Do the distribution again of boron again, temperature is 1150 ℃, and the time is the dry oxidation of 10 minutes dried nitrogen and 5 minutes; Be equipped with sheet square resistance Rs=15 Ω/side ± 5 Ω/sides with four-point probe measurment;
(15), the positive and negative deposit silicon nitride, thickness 1500 dusts;
(16), lithography fair lead, back side glue protection: plasma etching silicon nitride, photoetching corrosion liquid rinse SiO in the fairlead
2Layer;
(17), photoetching back of the body island, big island is carried on the back in front glue protection back photoetching: the vast district of plasma etching silicon nitride layer keeps the SiO in vast district
2Layer; The SiO that goes to back side Liang Qu and film district is carved in front glue protection
2Layer;
(18), the front aluminium coated, anti-carve aluminum lead, alloying: front vacuum aluminium coated layer, thickness are 1 micron ± 0.2 micron; Anti-carve aluminum lead; Alloying, temperature are 510 ℃, and the time is 20 minutes, and logical oxygen dry oxidation on microscopically observation aluminium lamination surface, the black alloy point occurs;
(19), preliminary survey: bridge resistance, R=5K Ω ± 0.5k Ω; Hard breakdown between the resistance area, BV 〉=70V; Offset voltage V
0＜100mv is qualified;
(20), enter the etching process flow process.
The selected original material of the present invention is the n type single crystal silicon sheet of twin polishing (100) crystal face, and resistivity is 0.5～5.0 Ω cm, and the original thickness of silicon chip is 2204 ± 20 μ m, and (110) crystal face is cut edge very clear, can distinguish the positive and negative of monocrystalline silicon piece.
Beneficial effect of the present invention is: 1, adopt preparation method of the present invention can obtain the ultralow minute-pressure pressure sensor silicon of high sensitivity microchip: encapsulation back sample sensitivity 〉=1.6mV/V/100Pa, nonlinearity erron is less than≤0.09%FS, repeatability error≤0.09%FS not, lag error≤0.09%FS, hot zero drift is-0.6 * 10
-4About ℃ FSO, thermal sensitivity drift is-1.0 * 10
-4About ℃ FSO, overall accuracy is 0.16%, overload capacity 〉=100 times full scale.
Description of drawings
Accompanying drawing is the flow chart of a kind of embodiment of method for manufacturing silicon chip of ultramicro tension pressure sensor of the present invention.
Drawing explanation: (1) oxidation; (2), dual surface lithography alignment mark; (3), oxidation, the positive Liang Qu of (4), the big film in photoetching back and photoetching, (5), the big film in back and positive Liang Qu corrosion; (6), oxidation; (7), stress unification district, the photoetching back side, front photoresist protection, the corrosion of (8), back side stress unification district; (9), back side glue protection, the front rinses SiO
2Layer; (10), oxidation; (11), photoetching resistance area; (12), force sensing resistance district boron mixes; (13), the photoetching concentrated boron area, (14), dense boron diffuse to form ohmic region, (15), positive and negative deposit silicon nitride; (16), lithography fair lead back side glue protection; (17), photoetching back of the body island, front glue protection back photoetching is carried on the back big island, (18), front aluminium coated; anti-carve aluminum lead; alloying, (20.1), front protecting, back side corrosion; (20.2), front protecting, the back side rinses the SiO that big island and stress unification go to the surface
2Layer, (20.3), front protecting, big island, the back side and stress unification district do not have mask corrosion.
The specific embodiment
Flow chart as shown in drawings, the selected original material of the present invention is the n type single crystal silicon sheet of twin polishing (100) crystal face, and resistivity is 0.5～5.0 Ω cm, and the original thickness of silicon chip is 220 ± 20 μ m, and concrete preparation method may further comprise the steps:
(1), oxidation: the silicon chip after the strictness cleaning is put into oxidation furnace, and logical oxygen is to the two-sided oxidation of silicon chip, and temperature is 1150 ℃, at first is dry oxidation 10 minutes, and water flowing steam wet oxidation is 30 minutes then.
(2), the dual surface lithography alignment mark: to the silicon chip dual surface lithography after the oxidation, form the double-sided alignment mark, backsizing wherein, pre-bake temperature is 80 ℃, the time is 5 minutes, the front gluing, 80 ℃ of pre-bake temperatures, the time is 10 minutes.
(3), oxidation: to through the silicon chip of dual surface lithography alignment mark once more oxidation so that the frame back side forms about 1 micron SiO
2Layer, temperature is 1150 ℃, at first is dry oxidation 10 minutes, water flowing steam wet oxidation is 2 hours 30 minutes then.
(4), the positive Liang Qu of big film in photoetching back and photoetching.
(5), big film in back and positive Liang Qu corrosion: rinsing is 10 seconds in rare HF acid in 1: 10, with drying up behind the cold deionized water rinsing; In concentration is corrosion 70 minutes among 25% the TMAH (TMAH), and temperature is 50 ℃.
(6), oxidation: logical oxygen is to the two-sided oxidation of silicon chip, and temperature is 1150 ℃, at first is dry oxidation 10 minutes, and water flowing steam wet oxidation is 30 minutes then.
(7), stress unification district, the photoetching back side, front photoresist protection keeps frontside oxide layer.
(8), back side stress unification district corrosion: corrode in 25% TMAH, about 140 minutes, temperature was 50 ℃, corrosion depth is about 12 microns, this degree of depth is suitably adjusted according to the silicon chip original thickness, and during less than 10 microns, gradual angle, garden step appears in frame edge at silicon film thickness; What deserves to be mentioned is the special stress unification district, the back side of this technology corrosion superpower anti-overload ability of ultra micro pressure sensor that formed technical guarantee, is that the key of ultra micro pressure sensor practicability guarantees.
(9), back side glue protection, the front rinses SiO
2Layer: the back side is protected with photoresist, in photoetching corrosion liquid, rinses positive SiO
2Layer.
(10), oxidation: logical oxygen is to the two-sided oxidation of silicon chip, and temperature is 1150 ℃, at first is dry oxidation 10 minutes, and water flowing steam wet oxidation is 30 minutes then.
(11), photoetching resistance area.
(12) force sensing resistance district boron mixes: resistance area adopts ion beam to inject, and is coated with the secondary photoresist, and keeps the photoresist beyond the resistance area, the masking layer during as ion beam doping; It is Rs=280 Ω/side～300 Ω/sides that four-point probe measurment is equipped with the sheet square resistance.
(13), photoetching concentrated boron area: photoresist protection in the back side keeps back side SiO
2Layer.
(14), dense boron diffuses to form ohmic region: temperature is 980 ℃ when giving deposit, and the time is 30 minutes, test resistance Rs=40 Ω/side ± 10 Ω/sides; Give the later HF acid of deposit and rinsed the surface boron silicon layer about 10 seconds with 1: 10, stand-by through the deionized water rinsing oven dry; Do the distribution again of boron again, temperature is 1150 ℃, and the time is the dry oxidation of 10 minutes dried nitrogen and 5 minutes; Be equipped with sheet square resistance Rs=15 Ω/side ± 5 Ω/sides with four-point probe measurment.
(15), the positive and negative deposit silicon nitride, thickness 1500 dusts.
(16), lithography fair lead, back side glue protection: plasma etching silicon nitride, photoetching corrosion liquid rinse SiO in the fairlead
2Layer.
(17), photoetching back of the body island, big island is carried on the back in front glue protection back photoetching: the vast district of plasma etching silicon nitride layer keeps the SiO in vast district
2Layer; The SiO that goes to back side Liang Qu and film district is carved in front glue protection
2Layer; What deserves to be mentioned is: back of the body island forms big island double-decker, big island is thin and light, has satisfied the requirement that stress concentrates and has reduced acceleration effect; The high overload that sharp and little island helps after the electrostatic bonding encapsulation is spacing.The insulating barrier at island tip helps reducing the adverse effect that electrostatic bond is made a concerted effort.
(18), the front aluminium coated, anti-carve aluminum lead, alloying: front vacuum aluminium coated layer, thickness are 1 micron ± 0.2 micron; Anti-carve aluminum lead; Alloying, temperature are 510 ℃, and the time is 20 minutes, and logical oxygen dry oxidation on microscopically observation aluminium lamination surface, the black alloy point occurs.
(19), preliminary survey: bridge resistance, R=5K Ω ± 0.5k Ω; Hard breakdown between the resistance area, BV 〉=70V; Offset voltage V
0＜100mv is qualified.
(20), enter the etching process flow process.Described etching process flow process comprises:
(20.1), front protecting, back side corrosion: front gluing at first, be coated with photoresist twice, pre-bake temperature is 80 ℃, the time is 10 minutes, the post bake temperature is 180 ℃, the time is 30 minutes; Black wax with fusion is bonded at the silicon chip front on the quartz plate then, uses NH
4OH: H
2O
2: H
2O=1: the solution of forming at 2: 5 boils to boiling, with cold deionized water rinsing silicon face about 5 minutes, corrodes the several seconds in rare HF acid of 1: 10, with drying up silicon chip surface after the washed with de-ionized water; Putting into temperature is 50 ℃, and concentration is in 40% the KOH solution, to corrode 140 microns.
(20.2), front protecting, the back side rinses surface, big island and stress unification removes surperficial SiO
2Layer: the SiO that rinses big island top end surface with the photoetching corrosive liquid
2Layer.
(20.3), front protecting, big island, the back side and stress unification district do not have mask corrosion: in temperature is 50 ℃, concentration is in 40% the KOH solution, continues the Liang Qu and the film district of corrosion big island of the back of the body and bottom, the back side, up to silicon film thickness＜10 micron; Rinse the SiO on frame surface with the photoetching corrosive liquid
2Layer, the silicon nitride and the SiO on reservation island top
2Layer takes off silicon chip from quartz plate, be placed on the black wax of cleaning silicon chip surface in ether and the dimethylbenzene, removes photoresist with plasma dry, removes the photoresist in silicon chip front.
(20.4) qualified ultra micro pressure sensor silicon is write down in preliminary survey.
Claims (3)
1. the preparation method of a silicon chip of ultramicro tension pressure sensor is characterized in that may further comprise the steps:
(1), oxidation: the raw material silicon chip after the strictness cleaning is put into oxidation furnace, and logical oxygen is to the two-sided oxidation of silicon chip, and temperature is 1150 ℃, at first is dry oxidation 10 minutes, and water flowing steam wet oxidation is 30 minutes then;
(2), the dual surface lithography alignment mark: to the silicon chip dual surface lithography after the oxidation, form the double-sided alignment mark, backsizing wherein, pre-bake temperature is 80 ℃, the time is 5 minutes, the front gluing, 80 ℃ of pre-bake temperatures, the time is 10 minutes;
(3), oxidation: to through the silicon chip of dual surface lithography alignment mark once more oxidation so that the frame back side forms about 1 micron SiO
2Layer, temperature is 1150 ℃, at first is dry oxidation 10 minutes, water flowing steam wet oxidation is 2 hours 30 minutes then;
(4), the positive Liang Qu of big film in photoetching back and photoetching;
(5), big film in back and positive Liang Qu corrosion: rinsing is 10 seconds in rare HF acid in 1: 10, with drying up behind the cold deionized water rinsing; In concentration is corrosion 70 minutes among 25% the TMAH, and temperature is 50 ℃;
(6), oxidation: logical oxygen is to the two-sided oxidation of silicon chip, and temperature is 1150 ℃, at first is dry oxidation 10 minutes, and water flowing steam wet oxidation is 30 minutes then;
(7), stress unification district, the photoetching back side, front photoresist protection keeps frontside oxide layer;
(8), back side stress unification district corrosion: corrode in 25% TMAH, about 140 minutes, temperature was 50 ℃, and corrosion depth is about 12 microns, and this degree of depth is suitably adjusted according to the silicon chip original thickness;
(9), back side glue protection, the front rinses SiO
2Layer: the back side is protected with photoresist, in photoetching corrosion liquid, rinses positive SiO
2Layer;
(10), oxidation: logical oxygen is to the two-sided oxidation of silicon chip, and temperature is 1150 ℃, at first is dry oxidation 10 minutes, and water flowing steam wet oxidation is 30 minutes then;
(11), photoetching resistance area;
(12) force sensing resistance district boron mixes: resistance area adopts ion beam to inject, and is coated with the secondary photoresist, and keeps the photoresist beyond the resistance area, the masking layer during as ion beam doping; Being equipped with the sheet square resistance with four-point probe measurment is Rs=280 Ω/side～300 Ω/sides;
(13), photoetching concentrated boron area: photoresist protection in the back side keeps back side SiO
2Layer;
(14), dense boron diffuses to form ohmic region: temperature is 980 ℃ when giving deposit, and the time is 30 minutes, test resistance Rs=40 Ω/side ± 10 Ω/sides; Give the later HF acid of deposit and rinsed the surface boron silicon layer about 10 seconds with 1: 10, stand-by through the deionized water rinsing oven dry; Do the distribution again of boron again, temperature is 1150 ℃, and the time is the dry oxidation of 10 minutes dried nitrogen and 5 minutes; Be equipped with sheet square resistance Rs=15 Ω/side ± 5 Ω/sides with four-point probe measurment;
(15), the positive and negative deposit silicon nitride, thickness 1500 dusts;
(16), lithography fair lead, back side glue protection: plasma etching silicon nitride, photoetching corrosion liquid rinse SiO in the fairlead
2Layer;
(17), photoetching back of the body island, big island is carried on the back in front glue protection back photoetching: the vast district of plasma etching silicon nitride layer keeps the SiO in vast district
2Layer; The SiO that goes to back side Liang Qu and film district is carved in front glue protection
2Layer;
(18), the front aluminium coated, anti-carve aluminum lead, alloying: front vacuum aluminium coated layer, thickness are 1 micron ± 0.2 micron; Anti-carve aluminum lead; Alloying, temperature are 510 ℃, and the time is 20 minutes, and logical oxygen dry oxidation on microscopically observation aluminium lamination surface, the black alloy point occurs;
(19), preliminary survey: bridge resistance, R=5K Ω ± 0.5k Ω; Hard breakdown between the resistance area, BV 〉=70V; Offset voltage V
0＜100mv is qualified;
(20), enter the etching process flow process.
2. the preparation method of silicon chip of ultramicro tension pressure sensor according to claim 1 is characterized in that described etching process flow process (20) comprising:
(20.1), front protecting, back side corrosion: front gluing at first, be coated with photoresist twice, pre-bake temperature is 80 ℃, the time is 10 minutes; The post bake temperature is 180 ℃, and the time is 30 minutes; Black wax with fusion is bonded at the silicon chip front on the quartz plate then, uses NH
4OH: H
2O
2: H
2O=1: the solution of forming at 2: 5 boils to boiling, with cold deionized water rinsing silicon face about 5 minutes, corrodes the several seconds in rare HF acid of 1: 10, with drying up silicon chip surface after the washed with de-ionized water; Putting into temperature is 50 ℃, and concentration is in 40% the KOH solution, to corrode 140 microns;
(20.2), front protecting, the back side rinses surface, big island and stress unification removes surperficial SiO
2Layer: the SiO that rinses big island top end surface with the photoetching corrosive liquid
2Layer;
(20.3), front protecting, big island, the back side and stress unification district do not have mask corrosion: in temperature is 50 ℃, concentration is in 40% the KOH solution, continues the Liang Qu and the film district of corrosion big island of the back of the body and bottom, the back side, up to silicon film thickness＜10 micron; Rinse the SiO on frame surface with the photoetching corrosive liquid
2Layer, the silicon nitride and the SiO on reservation island top
2Layer takes off silicon chip from quartz plate, be placed on the black wax of cleaning silicon chip surface in ether and the dimethylbenzene, removes photoresist with plasma dry, removes the photoresist in silicon chip front;
(20.4) qualified ultra micro pressure sensor silicon is write down in preliminary survey.
3. according to claim 1 or 2 described method for manufacturing silicon chip of ultramicro tension pressure sensor, it is characterized in that described raw material silicon chip is the n type single crystal silicon sheet of twin polishing (100) crystal face, resistivity is 0.5～5.0 Ω cm, and the original thickness of silicon chip is 220 ± 20 μ m.
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| CN102359836A (en) * | 2011-08-09 | 2012-02-22 | 浙江双友物流器械股份有限公司 | Manufacturing methods of MEMS piezoresistive pull pressure chip and sensor |
| CN103959013A (en) * | 2011-09-29 | 2014-07-30 | 斯维尔系统 | MEMS based ring laser gyroscope with reduced lock-in |
| CN103110414A (en) * | 2012-12-21 | 2013-05-22 | 西安交通大学 | Full-bridge chip embedded skull pressure sensor |
| CN103040456A (en) * | 2012-12-21 | 2013-04-17 | 西安交通大学 | Half-bridge chip planted type intracranial pressure sensor |
| CN103040456B (en) * | 2012-12-21 | 2015-07-08 | 西安交通大学 | Half-bridge chip planted type intracranial pressure sensor |
| CN103616123A (en) * | 2013-11-22 | 2014-03-05 | 中航（重庆）微电子有限公司 | Pressure sensor and manufacturing method thereof |
| CN104764547A (en) * | 2015-03-24 | 2015-07-08 | 西安交通大学 | Relief-type island film stress concentration structure micro-pressure sensor chip and preparing method |
| CN110955993A (en) * | 2019-11-22 | 2020-04-03 | 湖南城市学院 | Optimum design method for beam membrane structure of micro-pressure sensor |
| CN110955993B (en) * | 2019-11-22 | 2020-09-01 | 湖南城市学院 | Optimum design method for beam membrane structure of micro-pressure sensor |
| CN111238714A (en) * | 2020-02-19 | 2020-06-05 | 黑龙江大学 | Micro-pressure sensor and manufacturing process method thereof |
| CN111238714B (en) * | 2020-02-19 | 2021-12-07 | 黑龙江大学 | Manufacturing process method of micro-pressure sensor |
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