CN101101961A - Phase change memory unit with loop phase change material and its making method - Google Patents
Phase change memory unit with loop phase change material and its making method Download PDFInfo
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Abstract
The invention is concerned with the structure of the phase change memorizer device unit and its making method, with the cycle phase change material made of the heating electrode and the up electrode as the information saving carrier. The cycle phase change material is made of the proper film making technique and the nanometer processing, educed through the up and down electrode and integrated with the switch and the periphery circuit to prepare the nanometer scale phase change memorizer device unit. It is because of the thickness of the wall of the cycle phase change material is controllable within the nanometer scale range, the cross section area of the phase change material can be really small to improves the current density and the thermal efficiency of the phase change material available changing area that reduces the operating current of the phase change memorizer device unit and it's power consumption.
Description
Technical field
The present invention relates to ringwise non-volatile phase-change memory device unit of phase-change material and preparation method thereof, belong to the micro-nano electronic technology field.
Background technology
Phase-change random access memory (PC-RAM, Phase Change-Random Access Memory) technology is based on Ovshinsky at late 1960s (Phys.Rev.Lett., 21,1450,1968) beginning of the seventies (Appl.Phys.Lett., 18,254,1971) phase-change thin film of Ti Chuing can be applied to that the conception of phase change memory medium sets up.The characteristics of PC-RAM memory critical material phase-change alloy are can make material between amorphous state and polycrystalline attitude reversible transition take place when giving its electric pulse.Present high resistant when being in amorphous state, present low-resistance during the polycrystalline attitude, amplitude of variation can reach several magnitude.But because the restriction of technology of preparing and technology, phase-change material can only just undergo phase transition than under the highfield, and this has just limited the process of its practicability development.Along with the development of nanometer technology of preparing and technology, effective phase change region size of phase-change material can narrow down to nanometer scale in the device, and material undergoes phase transition that required voltage reduces greatly, power consumption reduces, and great variety has also taken place the performance of material simultaneously.
PC-RAM memory owing to have reads at a high speed, high erasable number of times, non-volatile, component size is little, low in energy consumption, advantages such as cost is low, can multistagely store, anti-strong motion and radioresistance, thought flash memories that most possible replacement is present by international semiconductor TIA and become following memory main product and become the device of commercial product at first.Major companies such as Ovonyx, Intel, Samsung, STMicroelectronics, Hitachi, IBM, Phlips and British Aerospace are arranged in the world in the research of carrying out the PC-RAM memory, carrying out at present that technology is improved and the R﹠D work of manufacturability aspect.
The PC-RAM memory realizes that one of business-like key is reducing of storage operation electric current, at present the major measure that adopts be reduce between heating electrode material and the phase-change material contact area, increase heating electrode material and phase-change material resistance, improve device architecture design etc.The structure of present existing phase transformation memory device unit has many kinds, comprise that edge joint touches (Symposium on VLSI TechnologyDigest of Technical Papers, 175,2003), phase-change material nano thread structure (Nature Materials, 4,347,2005), μ shape structure (IEEE Solid-State Circuits, 40,1557,2005), coaxial limiting structure (Symposium on VLSI Technology Digest of Technical Papers, 6B-1,96,2005), annular electrode structure (Jpn.J.Appl.Phys., 46,2001,2007), phase-change material bridge architecture (IEDM, 2006) and vertical diode and autoregistration lower electrode arrangement (ISSCC, 472,2007) etc.Yet along with reducing of device feature size, present semiconductor process technology is difficult to satisfy the demand of the little structure preparation to tens even several nanometers of size.Above-mentioned annular electrode structure is by bottom electrode is processed into annular, contact area between electrode and the phase-change material is reduced greatly, the current density of electrode is improved, heating efficiency is greatly improved, thereby play the effect that reduces operating current, what yet the shortcoming of this structure was the phase-change material size than electrode material is big, the zone that undergoes phase transition in the phase transition process is not easy control, can change within the specific limits, thereby can cause resistance value to have bigger excursion, bring difficulty to device operation, if but phase-change material were processed into annular, not only can play the effect that reduces electric current equally, and phase change region could finely be controlled also, reduce the distribution of resistance value, increase the controllability of device.For this reason, the present invention considers and adopts advanced thin-film material technology of preparing can prepare annular phase-change material, annular phase-change material and electrode can be integrated by nanofabrication technique again, constitutes phase transformation memory device unit.Because the lateral thin-film thickness of annular phase-change material can be very little, and the contact area between phase-change material and the electrode is reduced greatly, thereby reduce the operating current of device, this design starting point of the present invention just.(Chinese invention patent, application number: design 200510110783.x) has similarity, but maximum dissimilarity is that all there is very big-difference in device architecture and preparation method thereof as storage medium with adopting the phase-change material nanotube in the present invention.
Summary of the invention
The objective of the invention is to be to provide ringwise non-volatile phase-change memory device unit of phase-change material and manufacture method, reduce the device cell operating current to reach, reduce power consumption and increase the purpose of device reliability.
The preparation process of phase transformation memory device unit provided by the present invention, specific as follows:
1) on substrate the preparation the 1st insulation material layer (as shown in Figure 1), the method that is adopted be in sputtering method, evaporation, plasma ion assisted deposition method, chemical vapour deposition technique and the atomic layer deposition method any one.Insulating material wherein by in oxide, nitride, carbide or the sulfide a kind of constitute or at least two kinds form mixture and constitute; Substrate is silicon substrate, glass, GaAs, the SiO on silicon chip, the insulating barrier
2, in plastics or the crystalline material any one.
2) on the 1st insulation material layer, prepare lower electrode layer (as shown in Figure 2), the method that is adopted be in sputtering method, evaporation, plasma ion assisted deposition method, chemical vapour deposition technique and the atomic layer deposition method any one; Electrode material is the monometallic material, and is a kind of in the monometallic material among W, Pt, Au, Ti, Al, Ag, Cu or the Ni, or it is combined into alloy material.
3) on lower electrode layer the preparation the 1st insulation material layer (as shown in Figure 3), the method that is adopted be in sputtering method, evaporation, plasma ion assisted deposition method, chemical vapour deposition technique and the atomic layer deposition method any one.Insulating material wherein is the mixture of at least a composition in oxide, nitride, carbide or the sulfide.
4) perforate in the 2nd insulation material layer, fill heating electrode material and remove heating electrode material on the 2nd insulation material layer, make it and bottom electrode keep good electrical contact (as shown in Figure 4), the method that perforate is adopted in the 2nd insulation material layer be in conventional photoetching technique, focused-ion-beam lithography technology, electron beam lithography method, extreme ultraviolet photolithographic method and the nano impression method any; In the hole of the 2nd insulation material layer, fill method that heating electrode material adopted and be in sputtering method, evaporation, plasma ion assisted deposition method, chemical vapour deposition technique and the atomic layer deposition method any one; Heating electrode material is made of or alloy material that it is combined into a kind of in the monometallic material among W, Pt, Au, Ti, Al, Ag, Cu or the Ni, or by the nitride or the oxide of described electrode monometallic material; The method that heating electrode material adopted on described removal the 2nd insulation material layer is a chemical Mechanical Polishing Technique.
5) be connected on preparation layer of insulation material layer on the 2nd insulating barrier, and perforate (as shown in Figure 5) above heating electrode on the 2nd insulating barrier, the method that insulation material layer preparation is adopted be in sputtering method, evaporation, plasma ion assisted deposition method, chemical vapour deposition technique and the atomic layer deposition method any one; Heat-insulating material is the mixture of at least a formation in oxide, nitride, carbide or the sulfide; The method that perforate is adopted in insulation material layer be in conventional photoetching technique, focused-ion-beam lithography technology, electron beam lithography method, extreme ultraviolet photolithographic method and the nano impression method any.Align with the hole of the described filling heating electrode material of step 4 in hole on the insulation material layer, can be greatly or can be little in the aperture, identical also passable.
6) adopt thin film preparation process (as shown in Figure 6) and nanofabrication technique (as shown in Figure 7) to prepare annular phase-change material in the hole on insulation material layer, and make the lower surface of annular phase-change material and heating electrode keep excellent contact, the method that the phase-change material preparation is adopted be in sputtering method, evaporation, plasma ion assisted deposition method, chemical vapour deposition technique and the atomic layer deposition method any one; Phase-change material is a kind of in chalcogenide compound, GeTi, SiSb, the metal oxide; The method that annular phase-change material preparation is adopted be in conventional photoetching technique, focused-ion-beam lithography technology, electron beam lithography method, extreme ultraviolet photolithographic method and the nano impression method any; The shape of cross section of annular phase-change material is a kind of in circle, rectangle and the ellipse; Annular phase-change material cross sectional dimensions is compared with heating electrode, comprise three kinds of different structures, promptly the external diameter of the equal diameters of the external diameter of annular phase-change material and heating electrode material, annular phase-change material less than the diameter of the diameter of heating electrode material, heating electrode material less than the external diameter of annular phase-change material and greater than the internal diameter of annular phase-change material; The external diameter of annular phase-change material is 3-500nm, and wall thickness is 1-100nm; The height of annular phase-change material is 5-200nm.
7) in annular phase-change material hole, fill the 3rd insulation material layer (as shown in Figure 8), the method that is adopted be in thermal evaporation, sputtering method, chemical vapour deposition technique, atomic layer deposition method, metallo-organic compound vapour phase epitaxy method and the solution-liquid phase-solid phase method any; Insulating material is the mixture of at least a composition in oxide, nitride, carbide or the sulfide.
8) remove ringwise phase-change material layers and the 3rd insulation material layer (as shown in Figure 9) above the insulation material layer, the method that is adopted is a chemical Mechanical Polishing Technique.
9) on ringwise phase-change material, prepare top electrode (as shown in figure 10), the method that the electrode film material preparation is adopted be in sputtering method, evaporation, plasma ion assisted deposition method, chemical vapour deposition technique and the atomic layer deposition method any one; Electrode material is the monometallic material, and is a kind of in the monometallic material among W, Pt, Au, Ti, Al, Ag, Cu or the Ni, or it is combined into alloy material; Top electrode be shaped the method adopted be in conventional photoetching technique, focused-ion-beam lithography technology, electron beam lithography method, extreme ultraviolet photolithographic method and the nano impression method any.
10) integrated the control switch and the peripheral circuit of the upper and lower electrode of phase transformation memory device unit and device cell at last, prepare the phase transformation memory device unit of nanoscale, the processing method that is adopted is conventional semiconductor technology; As the material of extraction electrode be among W, Pt, Au, Ti, Al, Ag, Cu or the Ni any, or it is combined into alloy material.
11) in order to improve the efficiency of heating surface and heat utilization ratio, thereby reduction power consumption, can be at preparation one deck heating electrode interlayer between the heating electrode material of the phase change memory device unit that adopts above-mentioned preparation method to obtain and the annular phase-change material, the method that the heating electrode interlayer prepares employing is a kind of in thermal evaporation, sputtering method, chemical vapour deposition technique, atomic layer deposition method and the metallo-organic compound vapour phase epitaxy method; As the material of heating electrode interlayer be among GeN, GeWN or the GeTiN any.
This shows, the ringwise phase transformation memory device unit of phase-change material provided by the invention, be characterised in that: the 1st insulation material layer 2 is positioned on the substrate 1, lower electrode layer 3 is produced on the 1st insulation material layer 2, the 2nd insulation material layer 4 is produced on the lower electrode layer 3, on the 2nd insulating material, have a hole 5 and fill heating electrode material, insulation material layer 6 is positioned on the 2nd insulating barrier 4, and perforate on corresponding to the insulation material layer above the heating electrode, it is characterized in that ringwise phase-change material is produced in the hole of heat-insulating material, the lower surface of annular phase-change material is contacted with heating electrode, the annular phase-change material that links to each other with top electrode with heating electrode is as the carrier of information stores, and annular phase-change material center fill insulant.
The external diameter of described annular phase-change material and the equal diameters of heating electrode material.
The external diameter of described annular phase-change material is less than the diameter of heating electrode material.
The diameter of described heating electrode material less than the external diameter of annular phase-change material greater than the internal diameter of annular phase-change material.
Described substrate is silicon substrate, glass, GaAs, the SiO on silicon chip, the insulating barrier
2, in plastics or the crystalline material any one.
Described ringwise phase-change material preparation is adopted in sputtering method, evaporation, plasma ion assisted deposition method, chemical vapour deposition technique or the atomic layer deposition method any; Phase-change material be among chalcogenide compound, GeTi or the SiSb any; The shape of cross section of annular phase-change material is a kind of in circle, rectangle or the ellipse; The external diameter of annular phase-change material is 3-500nm, and wall thickness is 1-100nm; The height of annular phase-change material is 5-200nm.
The present invention proposes ringwise phase transformation memory device unit of a kind of phase-change material and preparation method thereof, it is characterized in that: the effective coverage size that phase-change material undergoes phase transition in the device cell can be easy to be reduced to tens even several nanometer, can reduce the size of device cell significantly, reduce the operating current and the power consumption of device cell, be the size of phase-change material owing to what reduce simultaneously, can effectively control the consistency of phase change region, improve the controllability of device cell.The present invention moves towards practicability and improves the device integrated level that for promoting phase transition storage very high practical value is arranged.
Description of drawings
Fig. 1 prepares the 1st insulation material layer on substrate
Fig. 2 prepares bottom electrode on the 1st insulation material layer
Fig. 3 prepares the 2nd insulation material layer on bottom electrode
Heating electrode is filled in Fig. 4 perforate in the 2nd insulation material layer in the hole, and removes the heating electrode material on the 1st insulation material layer
Fig. 5 prepares insulation material layer on heating electrode, and perforate above heating electrode
Fig. 6 fills phase-change material in the insulation material layer hole
Fig. 7 removes the phase-change material core, prepares annular phase-change material
Fig. 8 fills the 3rd insulation material layer in annular phase-change material
Fig. 9 removes phase-change material on the heat-insulating material and the polishing of the 3rd insulation material layer
Figure 10 prepares top electrode on annular phase-change material, prepare the annular phase-change material external diameter device unit construction schematic diagram consistent with the heating electrode material diameter
Figure 11 annular phase-change material external diameter is less than the device unit construction schematic diagram of heating electrode material diameter
Figure 12 heating electrode material diameter is less than annular phase-change material external diameter and greater than the device unit construction schematic diagram of annular phase-change material internal diameter
Figure 13 annular phase-change material external diameter device unit construction schematic diagram (heating electrode and annular phase-change material between interlayer arranged) consistent with the heating electrode material diameter
Figure 14 annular phase-change material external diameter is less than the device unit construction schematic diagram (between heating electrode and the annular phase-change material interlayer being arranged) of heating electrode material diameter
Figure 15 heating electrode material diameter is less than annular phase-change material external diameter and greater than the device unit construction schematic diagram (between heating electrode and the annular phase-change material interlayer being arranged) of annular phase-change material internal diameter
Among the figure: the 1-substrate; 2-the 1st insulation material layer; The 3-bottom electrode; 4-the 2nd insulation material layer; The 5-heating electrode; The 6-insulation material layer; The 7-circular hole; The 8-phase-change material layers; 9-the 3rd insulation material layer; The 10-top electrode; 11-heating electrode interlayer
Embodiment
Further specify substantive distinguishing features of the present invention and obvious improvement below by specific embodiment, but the present invention only limiting to embodiment absolutely not, also is that described embodiment limits the present invention absolutely not.
It is specific as follows that the annular phase-change material of utilization of the present invention prepares the preparation process of phase transformation memory device unit:
Step 1: substrate adopts silicon chip, adopts thermal oxidation method to prepare one deck SiO on silicon chip
2The 1st insulation material layer, film thickness are 500nm.(Fig. 1)
Step 2: at SiO
2Adopt magnetron sputtering to get the electrode W film ready on the 1st insulation material layer, technological parameter is: background air pressure is 1 * 10
-4Pa, Ar gas air pressure is 0.08Pa during sputter, and sputtering power is 400W, and underlayer temperature is 25 ℃, and film thickness is 100nm.(Fig. 2)
Step 3: on W film, adopt magnetron sputtering method to prepare SiO
2The 2nd insulating thin layer, technological parameter is: background air pressure is 1 * 10
-4Pa, Ar gas air pressure is 0.12Pa during sputter, and sputtering power is 400W, and underlayer temperature is 25 ℃, and film thickness is 100nm.(Fig. 3)
Step 4: at SiO
2Adopt in the 2nd adiabatic thin layer that conventional photoetching technique is exposed, etching, prepare the circular hole that diameter is 300nm, expose bottom electrode W in the hole; Adopt magnetron sputtering method to prepare heating electrode material TiN film in the hole, technological parameter is: background air pressure is 1 * 10
-4Pa, air pressure is 0.2Pa during sputter, Ar/N
2Gas flow ratio be 1: 1, sputtering power is 300W, underlayer temperature is 25 ℃, film thickness is 500nm; Adopt CMP (Chemical Mechanical Polishing) process to remove SiO
2TiN film on the adiabatic film.(Fig. 4)
Step 5: at SiO
2Adopt the PECVD legal system to be equipped with heat-insulating material SiO on adiabatic film and the TiN heating electrode material
2Film, film thickness are 200nm; Adopt then that conventional photoetching technique is exposed, etching directly over heating electrode TiN, prepare the circular hole that diameter is 300nm, expose heating electrode TiN in the hole.(Fig. 5)
Step 6: in the hole, adopt technique for atomic layer deposition to prepare Ge
2Sb
2Te
5Phase-change material, film thickness are 10nm.(Fig. 6)
Step 7: adopt reactive ion etching technology that the phase-change material etching of circular hole bottom is removed again, form annular phase-change material, its external diameter is 300nm, and wall thickness is 10nm.(Fig. 7)
Step 8: at annular Ge
2Sb
2Te
5Adopt the PECVD method to fill the 3rd insulating material SiO in the endoporus of phase-change material
2Film.(Fig. 8)
Step 9: adopt CMP (Chemical Mechanical Polishing) process to remove annular Ge
2Sb
2Te
5SiO on the phase-change material
2Insulating thin layer.(Fig. 9)
Step 10: at annular Ge
2Sb
2Te
5Adopt magnetron sputtering method to prepare upper electrode material TiN film on the phase-change material, technological parameter is: background air pressure is 1 * 10
-4Pa, air pressure is 0.2Pa during sputter, Ar/N
2Gas flow ratio be 1: 1, sputtering power is 300W, underlayer temperature is 25 ℃, film thickness is 300nm; Adopt common semiconductor processes to prepare top electrode, electrode is the square of 10 microns of the length of sides.(Figure 10)
Step 11: adopt magnetron sputtering method to prepare extraction electrode Al film, film thickness is 500nm, adopt common semiconductor processes to etch extraction electrode, integrated with the control switch and the peripheral circuit of device cell, thus prepare complete phase transformation memory device unit.
Change into the step 5 among the embodiment 1 as follows: at SiO
2Adopt the PECVD legal system to be equipped with heat-insulating material SiO on adiabatic film and the TiN heating electrode material
2Film, film thickness are 200nm; Adopt then that conventional photoetching technique is exposed, etching directly over heating electrode TiN, prepare the circular hole that diameter is 200nm, expose heating electrode TiN in the hole.
Change into the step 7 among the embodiment 1 as follows: adopt reactive ion etching technology that the phase-change material etching of circular hole bottom is removed again, form annular phase-change material, its external diameter is 200nm, and wall thickness is 10nm.
All the other steps and embodiment 1 are identical, can prepare the phase transformation memory device unit of annular phase-change material external diameter less than the heating electrode material diameter.(Figure 11)
Change into the step 5 among the embodiment 1 as follows: at SiO
2Adopt the PECVD legal system to be equipped with heat-insulating material SiO on adiabatic film and the TiN heating electrode material
2Film, film thickness are 200nm; Adopt then that conventional photoetching technique is exposed, etching directly over heating electrode TiN, prepare the circular hole that diameter is 350nm, expose heating electrode TiN in the hole.
Change into the step 6 among the embodiment 1 as follows: in the hole, adopt technique for atomic layer deposition to prepare Ge
2Sb
2Te
5Phase-change material, film thickness are 40nm.
Change into the step 7 among the embodiment 1 as follows: adopt reactive ion etching technology that the phase-change material etching of circular hole bottom is removed again, form annular phase-change material, its external diameter is 350nm, and wall thickness is 40nm.
All the other steps and embodiment 1 are identical, can prepare the heating electrode material diameter less than annular phase-change material external diameter and greater than the phase transformation memory device unit of annular phase-change material internal diameter.(Figure 12)
The Ge in embodiment 1,2 or 3
2Sb
2Te
5Phase-change material changes GeTi or SiSb into, and remainder is identical with embodiment 1,2 or 3 respectively.
At embodiment 1,2, add the GeN interlayer between heating electrode TiN in 3 or 4 and the phase-change material, remainder respectively with embodiment 1,2,3 or 4 is identical, can prepare the annular phase-change material external diameter phase transformation memory device unit (as shown in figure 13) consistent with the heating electrode material diameter with heating electrode GeN interlayer, annular phase-change material external diameter less than the phase transformation memory device unit (as shown in figure 14) of heating electrode material diameter and heating electrode material diameter less than annular phase-change material external diameter and greater than the phase transformation memory device unit (as shown in figure 15) of annular phase-change material internal diameter.
Claims (15)
1, the ringwise phase transformation memory device unit of phase-change material, the 1st insulation material layer (2) is positioned on the substrate (1), lower electrode layer (3) is produced on the 1st insulation material layer (2), the 2nd insulation material layer (4) is produced on the lower electrode layer (3), on the 2nd insulating material, have a hole (5) and fill heating electrode material, insulation material layer (6) is positioned on the 2nd insulating barrier (4), and perforate on corresponding to the insulation material layer above the heating electrode, it is characterized in that ringwise phase-change material is produced in the hole of heat-insulating material, the lower surface of annular phase-change material is contacted with heating electrode, the annular phase-change material that links to each other with top electrode with heating electrode is as the carrier of information stores, and annular phase-change material center fill insulant.
2,, it is characterized in that the equal diameters of the external diameter and the heating electrode material of described annular phase-change material by the ringwise phase transformation memory device unit of the described phase-change material of claim 1.
3, by the ringwise phase transformation memory device unit of the described phase-change material of claim 1, it is characterized in that the diameter of the external diameter of described annular phase-change material less than heating electrode material.
4, by the ringwise phase transformation memory device unit of the described phase-change material of claim 1, the diameter that it is characterized in that described heating electrode material less than the external diameter of annular phase-change material greater than the internal diameter of annular phase-change material.
5, by the ringwise phase transformation memory device unit of the described phase-change material of claim 1, it is characterized in that described substrate is silicon substrate, glass, GaAs, the SiO on silicon chip, the insulating barrier
2, in plastics or the crystalline material any one.
6, by the ringwise phase transformation memory device unit of each described phase-change material among the claim 1-4, it is characterized in that described electrode material by any constitutes in the monometallic material among W, Pt, Au, Ti, Al, Ag, Cu or the Ni, or its alloy material that is combined into constitutes.
7,, it is characterized in that described heating electrode material is any nitride or an oxide in the monometallic material among W, Pt, Au, Ti, Al, Ag, Cu or the Ni by the ringwise phase transformation memory device unit of each described phase-change material among the claim 1-4.
8,, it is characterized in that described insulation material layer is made of or mixture that two kinds form constitutes a kind of in oxide, nitride, carbide, the sulfide at least by the ringwise phase transformation memory device unit of each described phase-change material among the claim 1-4.
9, preparation is as the method for the ringwise phase transformation memory device unit of each described phase-change material among the claim 1-4, and its step of preparation process is:
A) preparation the 1st insulation material layer on substrate;
B) on the 1st insulation material layer, prepare lower electrode layer;
C) preparation the 2nd insulation material layer on lower electrode layer;
D) perforate in the 2nd insulation material layer, and fill heating electrode material, making it to keep good electrical contact with bottom electrode, the heating electrode material on the 2nd insulation material layer adopts glossing to remove;
E) be connected on preparation layer of insulation material layer on the 2nd insulating barrier, and perforate above heating electrode;
F) adopt thin film preparation process and nanofabrication technique to prepare annular phase-change material in the hole on insulation material layer, and make the lower surface of annular phase-change material and heating electrode keep excellent contact;
G) in annular phase-change material hole, fill the 3rd insulation material layer;
H) utilize glossing to remove phase-change material layers and the 3rd insulation material layer above the insulation material layer;
I) on annular phase-change material, prepare top electrode;
J) adopt nanofabrication technique integrated, prepare the phase transformation memory device unit of nanoscale the control switch and the peripheral circuit of the upper and lower electrode of phase transformation memory device unit and device cell.
10, by the preparation method of the ringwise phase transformation memory device unit of the described phase-change material of claim 9, the preparation that it is characterized in that described the 1st, the 2nd or the 3rd insulation material layer is adopted in sputtering method, evaporation, plasma ion assisted deposition method, chemical vapour deposition technique or the atomic layer deposition method any.
11, want the preparation method of the ringwise phase transformation memory device unit of 9 described phase-change materials by right, it is characterized in that the preparation of described electrode material adopts in sputtering method, evaporation, plasma ion assisted deposition method, chemical vapour deposition technique or the atomic layer deposition method any.
12, want the preparation method of the ringwise phase transformation memory device unit of 9 described phase-change materials by right, it is characterized in that described perforate in the 2nd insulation material layer and insulation material layer, and the method that electrode forming adopted be in photoetching technique, focused-ion-beam lithography technology, electron beam lithography method, extreme ultraviolet photolithographic method or the nano impression method any.
13, want the preparation method of the ringwise phase transformation memory device unit of 9 described phase-change materials by right, it is characterized in that the described heating electrode material of filling adopts in sputtering method, evaporation, plasma ion assisted deposition method, chemical vapour deposition technique or the atomic layer deposition method any in the hole of the 2nd insulation material layer.
14, want the preparation method of the ringwise phase transformation memory device unit of 9 described phase-change materials by right, it is characterized in that the preparation of described insulation material layer adopts in sputtering method, evaporation, plasma ion assisted deposition method, chemical vapour deposition technique or the atomic layer deposition method any.
15, want the preparation method of the ringwise phase transformation memory device unit of 9 described phase-change materials by right, it is characterized in that described ringwise phase-change material preparation adopts in sputtering method, evaporation, plasma ion assisted deposition method, chemical vapour deposition technique or the atomic layer deposition method any; Phase-change material be among chalcogenide compound, GeTi or the SiSb any; The shape of cross section of annular phase-change material is a kind of in circle, rectangle or the ellipse; The external diameter of annular phase-change material is 3-500nm, and wall thickness is 1-100nm; The height of annular phase-change material is 5-200nm.
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