CN101101455A - Method for producing device - Google Patents
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- CN101101455A CN101101455A CNA2007101383468A CN200710138346A CN101101455A CN 101101455 A CN101101455 A CN 101101455A CN A2007101383468 A CNA2007101383468 A CN A2007101383468A CN 200710138346 A CN200710138346 A CN 200710138346A CN 101101455 A CN101101455 A CN 101101455A
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Abstract
An exposure apparatus, wherein exposure is carried out while filling a space between a projection optical system and a substrate with a liquid, enables to suppress deterioration of a pattern image caused by any bubble in the liquid. The exposure apparatus includes a liquid supply unit 1 which fills at least a part of the space between the projection optical system and the substrate with a liquid 50 , and exposes the substrate by projecting an image of a pattern onto the substrate via the projection optical system. The liquid supply unit 1 includes a degassing unit 21 which suppresses the generation of the bubble in the liquid 50.
Description
The application is that application number is 200380105396.6 (PCT/JP2003/015407), the applying date the dividing an application for the patented claim of " exposure device and device making method " that be on June 8th, 2005, denomination of invention.
Technical field
The invention relates to the state that has been full of at least a portion between projection optical system and the substrate with liquid, use projection by projection optical system pattern image exposure substrate exposure device and with the device making method of this exposure device.
Background technology
Semiconductor devices and liquid crystal display device are to make by the so-called photoetching method that formed pattern on the mask is copied to photonasty substrate top.The exposure device that uses in this photo-mask process has the supporting mask platform of mask and the substrate table of support substrate, Yi Bian Yi Bian by the sequentially mobile mask platform of projection optical system and substrate table mask pattern is copied to device on the substrate.In recent years, further highly integrated corresponding for device pattern wishes to improve more the image resolution ratio of projection optical system.The exposure wavelength that the image resolution ratio of projection optical system is to use is short more, and the numerical aperture of projection optical system improves big more.Therefore, the exposure wavelength of penetrating use in exposure device is shortwaveization year by year, and the numerical aperture of projection optical system is also increasing.Yet now the main flow exposure wavelength is the 248nm of KrF excimer laser, yet also just at the practical application 193nm of short wavelength's ArF excimer laser more.And, when exposing, also very important with the same depth of focus of image resolution ratio (DOF).Respectively with following formula presentation video resolution R and depth of focus δ.
R＝k
1·λ/NA ...(1)
δ＝±k
2·λ/NA
2 ...(2)
Here, λ is an exposure wavelength, and NA is numerical aperture, the k of projection optical system
1, k
2Be the processes coefficient.By (1) formula, (2) formula as can be known,, shorten exposure wavelength lambda and increase numerical aperture NA, will make depth of focus δ stenosis in order to improve image resolution ratio R.
It is narrow that depth of focus δ became, and just is difficult to make substrate surface that the image planes of projection optical system are overlapped the danger of surplus deficiency when exposure actions is arranged.Therefore, as shortening exposure wavelength in fact, and enlarge the method for the depth of focus, for example propose the immersion method that on the world discloses No. 99/49504 communique, discloses.This immersion method is to be full of between the following and substrate surface of projection optical system with liquid such as water and organic solvents, (n is a liquid refractive index to utilize exposure light wavelength in the liquid to become airborne 1/n, common about 1.2～1.6) refractive index improves image resolution ratio, makes the depth of focus enlarge about n doubly simultaneously.
; be full of under the state of liquid below projection optical system and between the substrate surface; below projection optical system, adhere to bubble-level with substrate surface; the words that have bubble in the liquid in the exposure between projection optical system and substrate; just be used for to arrive the substrate top at the light of substrate top formation image; the light that perhaps is used for forming in the substrate top image can not arrive the phenomenon of the position of wishing on the substrate etc., and the pattern image that forms on the substrate has been worsened.
Summary of the invention
The present invention invents in view of such occasion, its purpose be to provide a kind of between projection optical system and substrate full of liquid carry out in the exposure-processed, can suppress to result from exposure device that the pattern image of bubble in the liquid worsens and the device making method that uses this exposure device.
In order to solve above-mentioned problem, the present invention adopts with Fig. 1～Fig. 7 that has that represents embodiment and constitutes accordingly.
According to the 1st scheme of the present invention, make the exposure device of substrate exposure exactly with the picture of predetermined pattern, provide exposure device to possess:
Make the afore mentioned rules pattern image project to projection optical system (PL) on the substrate;
The fluid Supplying apparatus of feed fluid (1) between above-mentioned projection optical system and substrate; With
Be used for removing the gas that is included in the liquid gas componant of being supplied with between above-mentioned projection optical system and the substrate and remove device (21).
At exposure device of the present invention, remove device because possess for the gas of from liquid, removing gas componant, just can will fully remove the liquid of gas componant and supply with between projection optical system and the substrate.Also have, the liquid that (in the light path of exposure light) exists between projection optical system and the substrate not only, and also suppress bubble the liquid that device exists in the liquid flow path projection optical system and the substrate and take place for removing from gas.Gas is removed device and is removed gas componant make the air concentration in the aforesaid liquid drop to preferably 0.016cm from aforesaid liquid
3/ cm
3Below.Gas is removed the available heating arrangement of device, reliever or degassing film or these combination.Gas is removed device and can be configured in the fluid Supplying apparatus or its exterior arrangement, also can be configured in the outside of exposure device chamber.
Fluid Supplying apparatus can have to a plurality of supply ozzles of feed fluid between projection optical system and the substrate and reclaim a plurality of recovery ozzles of supplying with liquid between projection optical system and the substrate.By using a plurality of ozzles, can be to projection in zone supply fluid equably.The objective table that exposure device Ju Bei Load puts substrate and moves it.Objective table during moving substrate, can expose (scan exposure) to the image drift of projection optical system projection.At this moment, supply with the inflow resistance of ozzle to the way reduction feed fluid of the moving direction ejection liquid of substrate, it is gratifying that moving of objective table do not impacted this point.
Exposure device of the present invention possesses in addition in order to adjust from the temperature adjustment device of the fluid temperature of aforesaid liquid feedway supply.The temperature that temperature adjustment device is adjusted liquid becomes in the exposure device it, and it is best for example accommodating the indoor atmosphere temperature of exposure device.So, just can control substrate temperature by the adjusted liquid of supplying temperature between projection optical system and substrate.
According to the present invention's the 2nd scheme, be with projection optical system (PL) pattern image to be projected to substrate (P) to go up after the projection, the exposure device of the above-mentioned substrate that exposes (EX) provides exposure device (EX) to have:
Be used for being full of the fluid Supplying apparatus (1) of at least a portion between above-mentioned projection optical system (PL) and the substrate (P) with liquid (50); With
The bubble restraining device (21) that suppresses gassing in the aforesaid liquid.
According to the present invention, owing to be provided with the bubble restraining device of gassing in the liquid that suppresses between projection optical system and the substrate, owing to can carry out exposure-processed under the state that bubble exists in the liquid on the exposure light light path, worsen so can prevent to result from the pattern image of bubble, can be manufactured with the device of high pattern precision.For example, in the fluid Supplying apparatus of feed fluid between projection optical system and substrate, be provided with under the occasion that suppresses the bubble restraining device of gassing in the liquid, can suppress in the liquid gassing fully thereby can deliver to this liquid between projection optical system and the substrate.So, do not have gassing after being full of liquid between projection optical system and the substrate yet.And, even hypothesis below projection optical system and in the stream of flow of liquid such as substrate surface bubble is taking place, in the liquid stream, flowing owing to suppressed the liquid of gassing fully, liquid also can absorb removes the bubble that has taken place in this liquid stream.Like this,, worsen, make the device that high pattern precision is arranged so can prevent to result from the pattern image of bubble because carrying out exposure-processed under the state that does not have bubble to exist in the liquid on the exposure light light path.
At exposure device of the present invention, above-mentioned bubble restraining device contains removes that the degasser of gas is gratifying in the liquid.And the heating arrangement that above-mentioned degasser contains heating liquid is gratifying.Above-mentioned heating arrangement can be set at 30 ℃＜T≤100 ℃ to the temperature of liquid.Also have, above-mentioned degasser also can comprise the reliever that makes the device inner pressure relief that keeps liquid.Above-mentioned reliever can be according to the temperature set pressure of liquid.And above-mentioned degasser changes decision degassing degree according to the portion temperature at least of liquid between above-mentioned projection optical system and the above-mentioned substrate, and to make it not have gassing be gratifying.And above-mentioned degasser also can change decision degassing degree according to the pressure to liquid between above-mentioned projection optical system and the above-mentioned substrate makes its not gassing.
Also have, with regard to the present invention, above-mentioned degasser is gratifying for the film degasser.And it is satisfactory that above-mentioned film degasser has the hollow line parts.Above-mentioned hollow line parts are so long as gas-premeable, and the non-permeability of liquid is just.Also have, the aforesaid liquid feedway comprises the liquid that adds the above-mentioned film degasser of heat supply, and the heating arrangement that the concentration of the gas that dissolving exists in the above-mentioned film degasser institute feed fluid is reduced is gratifying.
At exposure device of the present invention, suppressed the liquid of gassing with above-mentioned bubble restraining device, do not have and the gas contact under to supply with between above-mentioned projection optical system and the above-mentioned substrate be satisfactory.
At exposure device of the present invention, it is gratifying that the aforesaid liquid feedway possesses the filter for installation that filters liquid between above-mentioned projection optical system of supply and the above-mentioned substrate.And the temperature adjustment device that the aforesaid liquid feedway also possesses with above-mentioned degasser degassing back fluid temperature is gratifying.
At exposure device of the present invention, it is gratifying that the aforesaid liquid feedway also possesses the temperature adjustment device of adjusting with above-mentioned degasser degassing back fluid temperature.
Aspect the present invention, provide with the of the present invention the 1st or the exposure device of the 2nd scheme as the device making method of feature.
Description of drawings
Fig. 1 is the summary pie graph of expression exposure device-embodiment of the present invention.
Fig. 2 is the top ends of expression projection optical system and the location diagram of fluid Supplying apparatus and liquid withdrawal system.
Fig. 3 is the configuration illustration that ozzle and recovery ozzle are supplied with in expression.
Fig. 4 is the summary pie graph of express liquid feedway-embodiment.
Fig. 5 is the summary pie graph of other embodiment of express liquid feedway.
Fig. 6 is the summary pie graph of the another different embodiment of express liquid feedway.
Fig. 7 is that the summary of expression film degasser constitutes sectional view.
Fig. 8 is the configuration illustration that ozzle and recovery ozzle are supplied with in expression.
Fig. 9 is an example process flow diagram of expression semiconductor devices manufacturing process.
Embodiment
Below, the limit illustrates exposure device of the present invention and device making method with reference to the accompanying drawing limit.Fig. 1 is the summary pie graph of expression exposure device-embodiment of the present invention.
The 1st embodiment
In Fig. 1, exposure device EX possesses: the lamp optical system IL of the substrate table PST of mask platform MST, the support substrate P of supporting mask M, the mask M that supported with exposure light EL illumination mask platform MST, the pattern image of the mask M that has thrown light on exposure light EL is projected to the projection optical system PL that substrate P that substrate table PST supports exposes and is all together the control device CONT that controls exposure device EX molar behavior.
Here, for present embodiment, as exposure device EX illustrate use one side to make mask M exposure is formed at the occasion that mask M goes up the scanning exposure apparatus (the so-called ledex that scans) of pattern to substrate P with the moved further one side in the mutual different direction (reverse direction) to the direction of scanning with substrate P.In the following description, setting the direction consistent with the optical axis AX of projection optical system PL is Z-direction, the synchronous moving direction (direction of scanning) of establishing mask M and substrate P in the plane vertical with Z-direction is X-direction, and establishing the direction vertical with Y direction with Z-direction (non-direction of scanning) is Y direction.And, establish X-axis, Y-axis and Z rotational axis direction and be respectively θ X, θ Y and θ Z direction.Also have, " substrate " said here is included in the semiconductor wafer top and has been coated with resist, and " mask " is the reticle mask that is included in the device pattern that has formed reduced projection on the substrate.
Lamp optical system IL is the optical system with masked the mask M that MST was supported of exposure light EL illumination, it has exposure light source, make the light beam illumination homogenising that exposure light source penetrates light integrators, assemble from condenser, the relay lens system of light integrators exposure light EL and be slit-shaped and set the upward variable field-of-view diaphragm etc. of surround of the mask M that forms by exposure light EL.Mask M goes up the surround of regulation by the exposure light EL illumination of lamp optical system IL with uniform Illumination Distribution.With regard to the exposure light EL that penetrates from lamp optical system IL, for example, can use from the vacuum-ultraviolet light (VUV light) of extreme ultraviolet light (DUV light), ArF excimer laser light (wavelength 193nm) and the F2 laser optical (wavelength 157nm) etc. of the bright line (g line, h line, i line) of the ultraviolet region that mercury vapor lamp penetrates and KrF excimer laser light (wavelength 248nm) etc. etc.Use ArF excimer laser light in the present embodiment.
Mask platform MST is exactly the device of supporting mask M, is in the plane vertical with the optical axis AX of projection optical system PL, and promptly two dimension is removable and in θ Z direction can small rotation in the XY plane.Mask platform MST is driven by mask platform drive unit MSTD such as linear motors.Mask platform drive unit MSTD is controlled by control device CONT.Mask platform MST goes up two-dimensional directional position and the rotation angle of mask M and measures in real time with laser interferometer, and gives control device CONT with measurement result.Control device CONT drives mask platform drive unit MSTD according to the measurement result of laser interferometer, and the mask M that mask platform MST is supported positions.
Projection optical system PL be projection enlargement factor β with regulation to the optical system of substrate P projection exposure mask M pattern, it is made of a plurality of optical elements (lens), the lens barrel PK that these optical elements are used as metal parts supports.In the present embodiment, projection optical system PL is that projection enlargement factor β for example is 1/4 or 1/5 reduction system.Also have, projection optical system PL also can be that any one waits times system and amplification system.And in the top of present embodiment projection optical system PL one side (substrate P side), optical element (lens) 60 exposes from lens barrel PK.This optical element 60 is configured to can load and unload lens barrel PK the mode of (replacing).
Substrate table PST is the device of support substrate P, and it possesses the pedestal 53 that keeps the Z objective table 51 of substrate P, the XY objective table 52 that supports Z objective table 51 and supporting XY objective table 52 by substrate support.Substrate table PST drives with substrate table drive unit PSTD such as linear motors.Substrate table drive unit PSTD is controlled by control device CONT.By drive Z objective table 51 be controlled at the substrate P that is keeping on the Z objective table 51 Z-direction position (focal position) and in the position of θ X, θ Y direction.And, by driving XY objective table 52 control substrate P in the position of XY direction (with the plane of delineation of the projection optical system PL position of parallel direction in fact).That is, focal position and the pitch angle of Z objective table 51 control substrate P, with automatic focus mode and adjustment mode and make the image planes of the surface of substrate P and projection optical system PL overlapping automatically, X-direction and the Y direction of 52 couples of substrate P of XY objective table position.Also have, much less integral body is provided with the Z objective table and the XY objective table is good.
In substrate table PST (Z objective table 51) top, the moving lens 54 that projection optical system PL is moved with substrate table PST is set.And, be provided with laser interferometer 55 in the position relative with moving lens 54.Measure the position and the rotation angle of the substrate P two-dimensional directional on the substrate table PST in real time with laser interferometer 55, and measurement result is exported to control device CONT.Control device CONT positions the substrate P that substrate table PST is supported according to the measurement result driving substrate table drive unit PSTD of laser interferometer 55.
For present embodiment,, enlarge the depth of focus in fact, so use immersion method because when shortening exposure wavelength in fact and improve image resolution ratio.For this reason, at least mask M pattern image is duplicated (projection) to the substrate P during, make the liquid 50 of regulation be full of the surface of substrate P and substrate P one sidelight of projection optical system PL is learned between the top end face (lower surface) 7 of element (lens) 60.As above-mentioned, one side is exposed lens 60 on the top of projection optical system PL, and liquid 50 usefulness supply ozzle described later is supplied with and made it only to contact with lens 60.Therefore, prevent that the lens barrel PK that is made of metal is corroded etc.In the present embodiment, with regard to liquid 50 available pure water.Pure water is not only at ArF excimer laser light, and the extreme ultraviolet light (DUV light) that for example waits from the bright line (g line, h line, i line) and the krF excimer laser light (wavelength 248nm) of the ultraviolet region that mercury vapor lamp penetrates is during as exposure light EL, can both be through these light EL that exposes.
The fluid Supplying apparatus 1 of the liquid of stipulating 50 and the liquid withdrawal system 2 of the liquid 50 that reclaims space 56 are supplied with in the space 56 that exposure device EX possesses between the top end face of projection optical system PL (top end faces of lens 60) 7 and substrate P.Fluid Supplying apparatus 1 is to be used for being full of between projection optical system PL and the substrate P at least-device of part with liquid 50, and it possesses the receiver of accommodating liquid 50 and force (forcing) pump etc.With supply pipe 3-end is connected to fluid Supplying apparatus 1, the other end of supply pipe 3 connects supplies with ozzle 4.Fluid Supplying apparatus 1 is by supply pipe 3 and supply with ozzle 4 to space 56 feed fluids 50.
Fig. 2 is Fig. 1 part enlarged drawing of projection optical system PL bottom, fluid Supplying apparatus 1 and the liquid withdrawal system 2 etc. of expression exposure device EX.In Fig. 2, projection optical system PL lens 60 bottom have only the direction of scanning to stay necessary part and form the elongated rectangular shape in Y direction (non-direction of scanning) at top ends 60A.During scan exposure, the a part of pattern image of rectangle projection in zone projection print plate M under top ends 60A, though to projection optical system PL edge-directions X (or+directions X) with speed V move mask M synchronously through XY objective table 52 edge+directions Xs (or-directions X) with the mobile substrate P of speed β V (β is the projection enlargement factor).Then, behind 1 irradiated region end exposure, make next irradiated region move to the beginning scanning position along with the stepping of substrate P, below, sequentially each irradiated region is carried out exposure-processed in the step-scan mode.In the present embodiment, be set in parallel with substrate P moving direction, make its with the moving direction of substrate P with-direction working fluid 50.
Fig. 3 is the lens 60 top ends 60A of expression projection optical system PL, along the supply ozzle 4 of X-direction feed fluid 50 (4A～4C) and the recovery ozzle 5 of withdrawal liquid 50 (5A, location diagram 5B).Among Fig. 3, the shape of lens 60 top ends 60A has become at elongated rectangular-shaped of Y direction, and in the appearance of X-direction with the top ends 60A that clips projection optical system PL lens 60, ozzle 4A～4C are supplied with in 3 of edge+directions X one side configurations, 2 recovery of edge-directions X one side configuration ozzle 5A, 5B.Then, will supply with ozzle 4A～4C through supply pipe 3 and be connected to fluid Supplying apparatus 1, will reclaim ozzle 5A, 5B through recovery tube 4 and be connected to liquid withdrawal system 2.And, supply with ozzle 4A～4C and reclaiming ozzle 5A, 5B have approximately rotated 180 ° to the center of top ends 60A position configuration supply ozzle 8A～8C and recovery ozzle 9A, 9B.Supply with ozzle 4A～4C and reclaim ozzle 9A, 9B for alternately to arrange along Y direction, supplying with ozzle 8A～8C then alternately arranges along Y direction with recovery ozzle 5A, 5B, supply with ozzle 8A～8C and be connected to fluid Supplying apparatus 1, reclaim ozzle 9A, 9B and connect liquid withdrawal system 2 through recovery tube 11 through supply pipe 10.Carry out supplying with, make not produce the gas part between projection optical system PL and the substrate P from the liquid of ozzle.
Fig. 4 is the pie graph of fluid Supplying apparatus 1.As shown in Figure 4, fluid Supplying apparatus 1 possesses degasser 21 as the bubble restraining device that suppresses gassing in the liquid 50.Degasser 21 shown in Fig. 4 possesses the heating arrangement of heating liquid 50.Here, aspect present embodiment, liquid 50 is exactly circulation between fluid Supplying apparatus 1 and liquid withdrawal system 2, from the liquid 50 of liquid withdrawal system 2 just through circulation pipe 12 rework solution body feedings 1.At fluid Supplying apparatus 1, be provided with force (forcing) pump 15 from liquid to its upstream side that send.
Contaminated in order to prevent substrate P and projection optical system PL, perhaps worsen for the pattern image that prevents to project on the substrate P, fluid Supplying apparatus 1 possesses: for example be used to filter the liquid 50 with after liquid withdrawal system 2 recovery, remove the filtrator 20 of the foreign matter etc. of liquid in 50 after the reclaiming with liquid withdrawal system 2, the heating arrangement 21 that is heated to set point of temperature (for example 90 ℃) by the liquid behind the filtrator 20 50, will adjust to the temperature adjustment device 22 that requires temperature with heating arrangement 21 warmed-up liquid 50 temperature.And though not shown in Fig. 4, fluid Supplying apparatus 1 possesses the containers such as jar that liquid 50 can keep ormal weight.Here, the temperature adjustment device 22 of being located at fluid Supplying apparatus 1 is liquid 50 temperature of space 56 supplies, and the indoor temperature (for example 23 ℃) that for example is set at and accommodates exposure device EX is roughly the same.Temperature adjustment device 22 is coupled together with supply pipe 3,10, adjusted the liquid 50 of temperature, give space 56 by supply pipe 3 (10) by means of force (forcing) pump 15 with temperature adjustment device 22.
Here, heating arrangement 21 is set at the temperature of liquid 50 more than 30 ℃ and below 100 ℃.That is, liquid 50 is heated to than the temperature of being set by temperature adjustment device 22 (being for example 23 ℃ of indoor temperatures) wants high temperature, and in the following temperature range of boiling point of liquid.Heating arrangement 21 is that heating liquid 50 makes it the degassing in the said temperature scope, gassing in the liquid 50 in inhibition supply space 56.Especially, heating arrangement 21 employings just can outgas the way that liquid 50 is heated to its boiling point fully.
Also have, liquid 50 is that heating arrangement 21 aspects are set at that to want the following temperature of height and boiling point than the temperature in indoor (space 56) be gratifying, so liquid 50 is under the liquid situation beyond the water, heating arrangement 21 is heated to and the temperature of this boiling point of liquid correspondence.
Secondly, the relevant order that makes the pattern of mask M to substrate P exposure with above-mentioned exposure device EX is described.
Mask M is contained on the mask platform MST, simultaneously substrate P is installed to after substrate table PST goes up, control device CONT drives fluid Supplying apparatus 1, begins the liquid in space 56 supplied with to move.At fluid Supplying apparatus 1, liquid 50 is given heating arrangement 21 by filtrator 20 with the president who has removed foreign matter etc.The liquid 50 of delivering to heating arrangement 21 is heated to the temperature of regulation.Liquid 50 outgases by being heated to set point of temperature with heating arrangement 21.The gas componant of being removed is discharged to the device outside through the gas outlet 13 that constitutes an exhaust apparatus part.The liquid 50 that has outgased is given temperature adjustment device 22, with temperature for example adjust to indoor temperature temperature about equally after, by supply pipe 3 with supply with ozzle 4 and deliver to space 56.Here, the stream of the liquid 50 of pipeline 14, temperature adjustment device 22 and the supply pipe 3 etc. of connection heating arrangement 21 and temperature adjustment device 22 is airtight, and liquid 50 is being full of the presidential current downflow of this stream fully.That is, the liquid 50 that flows through this stream exactly not and gas deliver to space 56 contiguously.And supply pipe 3 internal faces such as grade (with the sign indicating number that contacts of liquid) that form from heating arrangement 21 to the stream of supplying with space 56 are hydrophilic, are suppressed at from heating arrangement 21 to the space in 56 the stream gassing the liquid.In this case, for example as supply pipe 3, the stainless steel pipe that available electrolytic polishing is crossed.Also have, also can manage the liquid 50 of degassing phase is kept in the tank and conduit that does not contact with gas in advance, give space 56 in the timing that requires.At this moment, except that heating arrangement 21, above-mentioned stream and above-mentioned tank, perhaps above-mentioned conduit also play the effect of bubble restraining device part of functions.
Then, the mobile substrate P in direction of scanning (directions X) along arrow Xa (Fig. 3 reference) expression carries out the occasion of scan exposure, with supply pipe 3, supply ozzle 4A～4C, recovery tube 4 and recovery ozzle 5A, 5B, carry out the supply and the recovery of liquid 50 by means of fluid Supplying apparatus 1 and liquid withdrawal system 2.Promptly, in the time of when substrate P edge-directions X moves, (4A～4C) liquid is supplied with liquid 50 supply projection optical system PL and the substrate P that suppressed gassing with supplying with ozzle 4 through supply pipe 3, send liquid 50 liquid back to retracting device 2 through reclaiming ozzle 5 (5A, 5B) and recovery tube 6 simultaneously, edge-directions X is flowing liquid 50 between lens 60 and the substrate P as being full of.On the other hand, carry out the occasion of scan exposure along the mobile substrate P in direction of scanning (+directions X) that arrow XB represents, with supply pipe 10, supply ozzle 8A～8C, recovery tube 11 and recovery ozzle 9A, 9B, carry out the supply and the recovery of liquid 50 by means of fluid Supplying apparatus 1 and liquid withdrawal system 2.Promptly, when substrate P edge+directions X moves, through supply pipe 10 and supply mouth 8 (8A～8C) deliver between projection optical system PL and the substrate P with the liquid 50 after fluid Supplying apparatus 1 degassing, just reclaimed edge as being full of between lens 60 and the substrate P+Y direction working fluid 50 through the liquid 50 that reclaims ozzle 9 (9A, 9B) and recovery tube 11 simultaneously by liquid withdrawal system 2.Like this, control device CONT usefulness fluid Supplying apparatus 1 and liquid withdrawal system 2 are along the moving direction working fluid 50 of substrate P.At this moment, for example from fluid Supplying apparatus 1 by the liquid 50 supplying with ozzle 4 and supply with should along with to substrate P-the mobile introducing space 56 of directions X, so even the energize of fluid Supplying apparatus 1 is very little, also mixing is easily delivered to space 56 to liquid 50.And, even according to the direction of direction of scanning conversion working fluid 50, at+directions X, or-occasion of which scanning direction substrate P of Y direction, also can be full of between the top end face 7 and substrate P of lens 60, can obtain height and separate the image resolution ratio and the broad depth of focus with liquid 50.
As above theory is crossed, at exposure device, especially, in the fluid Supplying apparatus 1 of feed fluid 50 between projection optical system PL and substrate P, be provided with the heating arrangement 21 of heating liquid 50, thereby can liquid 50 degassing backs delivered to this liquid 50 between projection optical system PL and the substrate P.So, in the exposure-processed, can suppress instinct liquid 50 the inside gassings between projection optical system PL and the substrate P.And, even in the stream between heating arrangement (degasser) 21 and the space 56, the top end face 7 of projection optical system PL or substrate P surface etc. are because of certain reason hypothesis gassing, since fully the liquid 50 of the degassing in stream and space 56 li mobile, also can absorb and remove liquid 50 and be present in bubble in this stream.And give the liquid 50 in the space 56 between projection optical system PL and the substrate P because do not contact with its ambient gas (air), though the danger that the gas (air) around having dissolves in 50 li of liquid, but because to 50 li dissolved gases of liquid (air) quantity part degree, the liquid of being supplied with by fluid Supplying apparatus 1 50 is reclaimed by liquid withdrawal system 2 losing before the character of its degassing.So, can be and the liquid 50 between projection optical system PL and substrate P produces bubbles because of 56 li to the space liquid 50 dissolved gases (air) yet.Like this, just can not exist the state of bubble to carry out exposure-processed for 50 li, worsen, can be manufactured with the device of high pattern precision so prevent the pattern image that causes because of bubble at the liquid on the exposure light EL light path.Also have, heating arrangement 21 also can not be located in the fluid Supplying apparatus 1, and is located at the place of leaving fluid Supplying apparatus 1, also can be located at exposure device chamber interior or outside.
And liquid 50 is to supply with space 56 at the state of having adjusted temperature with temperature adjustment device 22, so carry out the temperature adjustment on substrate P surface, the heat that produces in the time of preventing owing to exposure causes the reductions such as alignment precision that substrate P thermal expansion causes.
As described above, liquid 50 usefulness of present embodiment pure water.Obtain pure water at an easy rate in a large number at semiconductor manufacturing factory etc., have photoresist on couple substrate P and optical element (lens) etc. not to have dysgenic advantage simultaneously.And pure water does not have harmful effect to environment, and simultaneously impurity content is very low, so can expect the surface of substrate P and the optical element surface of being located at the top end face of projection optical system PL are had the effect of cleaning yet.
Then, can think the refractive index n about about 1.47～1.44 of exposure light EL about pure water (water) is to wavelength 193nm, used the occasion of ArF excimer laser light (wavelength 193nm) as the light source of exposure light EL, wavelength decreases can obtain high image resolution ratio to 1/n about promptly about 131～134nm on substrate P.Also have, compare in the depth of focus and the air and enlarge about n times, it is about about 1.47～1.44 times, so to can guarantee with air in the occasion equal extent depth of focus occasion just used, can further increase the numerical aperture of projection optical system PL, even this point also improves image resolution ratio.
In the present embodiment, on the top of projection optical system PL lens 60 are installed, yet, also can are the optical characteristics that is used to adjust projection optical system PL as the optical element that is installed on projection optical system PL top, the optical sheet of aberration (spherical aberration, comatic aberration etc.) for example.It perhaps also can be the planopaallel plate that can see through exposure light EL.Because the optical element that handle contacts with liquid 50 is as the planopaallel plate than lens cheapness, carrying at exposure device EX, assembling, during adjustment etc., make material (for example silicon is organism) that the homogeneity of the illumination of the transmissivity of projection optical system PL, the exposure light EL on the substrate P and Illumination Distribution reduces even be attached on this planopaallel plate, also, compare the advantage that its replacement cost of reduction is arranged as the occasion of lens with the optical element that liquid 50 is contacted as long as before feed fluid 50, change its planopaallel plate.Promptly, cause the optical element surface that contacts with liquid 50 to pollute because of the irradiation of exposure light EL by disperse particle or 50 li impurity that have of liquid etc. that resist takes place, essential this optical element of periodic replacement, yet because this optical element is cheap planopaallel plate, compare the cost of changing member with lens low, and can shorten the time that replacing makes to be needed, can suppress the rising of maintenance cost (operating cost) and the reduction of throughput rate.
And, under the optical element and the very big occasion of the pressure between the substrate P on the projection optical system PL top produce owing to flowing of liquid 50, not only its optical element become removable, and according to its pressure also firmly fixing optical element make it motionless.
Also have, in the present embodiment,, also can be, for example the structure of the cover glass state full of liquid 50 that constitutes by planopaallel plate in the mounted on surface of substrate P though be the structure that is full of with liquid 50 between projection optical system PL and the substrate P surface.
Also have, the liquid 50 of present embodiment is water, yet is that water liquid in addition is good.For example, the light source of exposure light EL is F
2The occasion of laser, this F
2Laser optical can not permeate water, thereby as liquid 50, also can be to see through F
2Laser optical, for example fluorocarbon oil is that (fluorine is that liquid) is with Over fluorine polyvinyl ethyl ether (PFPE).And, as liquid 50, in other respects, use the permeability refractive index of exposure light EL high as much as possible, to projection optical system PL with to be applied to the stable liquid (for example cedar oil) of the photoresist on substrate P surface also passable.
The 2nd embodiment
Secondly, the limit is with reference to the 2nd embodiment of Fig. 5 limit explanation exposure device EX of the present invention.Here, aspect the following description, the formation portion identical or equal with the above embodiments gives identical label, and simple or omit its explanation.The characteristic of relevant present embodiment is reliever 23 to be set replace to heating arrangement 21 this point.
As shown in Figure 5, in order to prevent the pollution to substrate P and projection optical system PL, perhaps in order to prevent that the pattern image that makes substrate P go up projection from worsening, fluid Supplying apparatus 1 possesses; Filter the liquid 50 that for example reclaims with liquid withdrawal system 2, the liquid 50 of remove the filtrator 20 of 50 li foreign matters of liquid, the reliever 23 by making these liquid 50 degassings for liquid 50 decompressions of having removed foreign matter by filtrator 20, handling outgasing with reliever 23 is adjusted to temperature adjustment device 22 and the force (forcing) pump 25 with indoor temperature cardinal principle uniform temp.Reliever 23 has the receiver that keeps liquid 50, exactly this internal tank decompression is made liquid 50 degassings.Like this, also can make liquid 50 degassings by means of the way of decompression without heating liquid 50.Reliever 50 for example can be by the receiver that can quantitatively keep liquid 50, and is connected with container, makes in this container near the vacuum pump of the gaseous tension decompression of liquid 50 to constitute.
Also have,, also can carry out heat treated and reduced pressure treatment simultaneously liquid 50 in order to make liquid 50 degassings.That is, can keep 23 li of the relievers of liquid 50 having container, become the heating arrangement structure that this container of heating is set.Reliever 23 is accommodated liquid 50 in container, while make this container decompression use above-mentioned heating arrangement heating liquid 50, just can make liquid 50 degassings.
At this moment, reliever 23 is provided with pressure according to the temperature of liquid 50.That is, adopt the way that liquid 50 is heated to boiling point to obtain sufficient degasifying effect, yet because the boiling point of liquid 50 depends on pressure, the way that pressure is set according to the temperature of liquid 50 just can make liquid 50 efficiently and well outgas.For example, the pressure (boiling pressure) when being 100 ℃ as the boiling point of the water of liquid 50 is atmospheric pressure (101325pa).Boiling point is that 90 ℃ boiling pressure is 70121Pa.Equally, at 80 ℃ of following boiling pressure 47377Pa of boiling point, at 50 ℃ of following boiling pressure 12345Pa of boiling point, at 30 ℃ of following boiling pressure 4244.9Pa of boiling point, at 20 ℃ of following boiling pressure 2338.1Pa of boiling point.So reliever 23 for example is set at 100 ℃ occasion in the temperature of liquid 50 with heating arrangement, can carry out reduced pressure treatment and under atmospheric pressure make the liquid 50 boiling degassing.On the other hand, the temperature of liquid 50 is occasions of 90 ℃, and reliever 23 should be set in pressure the scope of the boiling pressure (70121Pa) of 90 ℃ of atmospheric pressure～temperature, can make the liquid 50 boiling degassings.Equally, for example the temperature with regard to liquid 50 is 30 ℃, is exactly that reliever 23 is made as atmospheric pressure～boiling pressure (4244.9Pa) to pressure, can make the liquid 50 boiling degassings.Like this, because the boiling point of liquid 50 changes with pressure, liquid 50 is outgased well so reliever 23 should be provided with pressure according to the temperature of liquid 50.
Also have, supply with the degassing degree of the liquid 50 between projection optical system PL and the substrate P, i.e. the concentration of dissolved gas of liquid 50, by service condition (conditions of exposure etc.) decision of liquid 50 just.The occasion of immersion exposure, because with the irradiation of exposure light EL, perhaps the warm heat of substrate P with the irradiation of exposure light EL makes in the liquid 50 temperature exposure between projection optical system PL and the substrate P and all or partly rises.The temperature of liquid 50 rises also different with the intensity of exposure light EL etc., approximately is several years (1～3 ℃), yet if the degassing degree of liquid 50 is low, along with the temperature of liquid 50 rises, dissolved gases has the possibility that becomes bubble in the liquid 50.So the essential degassing degree of setting liquid 50 is not although can produce bubble down to the rising of liquid 50 occurrence temperatures between projection optical system PL and substrate P yet.For example, as described above, between projection optical system PL and substrate P, supply with the occasion that fluid temperature is controlled at 23 ℃ of temperature, estimate safety, as long as make the temperature of liquid rise to 30 ℃ of also gassings not even degassing degree for example is set.Specifically, establish liquid 50, promptly the degassing degree of water is the air dissolves saturating capacity 0.016cm to 30 ℃ of water
3/ cm
3Below (if come word with mass ratio, N
2Below 13ppm, O
2Be that 7.8ppm is following) all right.Also has " cm
3/ cm
3" be that expression is dissolved in 1cm
3Volume of air cm in the water
3
And, the occasion of immersion exposure, the liquid 50 between projection optical system PL and substrate P takes place to flow, and the pressure that just produces liquid 50 changes.This pressure changes also the translational speed of quantity delivered with liquid, yield, substrate P etc. and different, be hundreds of Pa (about 100～300Pa), when yet the degassing degree of liquid 50 is hanged down, just might to the pressure of liquid 50 change and in liquid 50 possibility of gassing.So, set the degassing degree of liquid 50, though make its because of liquid 50 pressure change hundreds of Pa can gassing yet just.
And, improve degassing degree very under the situation of difficult, also can determine conditions of exposure and change so that can in the liquid between projection optical system PL and the substrate P, not cause the temperature variation of gassing or pressure.As conditions of exposure, comprise among the pulse width of emission cycle (recurrent interval), exposed pulse light of translational speed, exposure light intensity, the exposed pulse light of quantity delivered, yield, the substrate P of liquid at least-individual condition.Also have, consider the temperature variation of liquid and the occasion that pressure changes the decision conditions of exposure, not only prevent bubble, and need also certainly to determine to prevent to result from that the pattern image imaging that liquid refractivity changes worsens on the spot.
The 3rd embodiment
The limit is with reference to the 3rd embodiment of Fig. 6 and 7 explanations exposure device EX of the present invention.In the exposure device of present embodiment, replace the heating arrangement of fluid Supplying apparatus among the 1st embodiment and possess as shown in Figure 6 film degasser 24 and heating arrangement 25.Give same numeral to same as the previously described embodiments or equal component part in the following description, and simple or omit its explanation.
Fig. 6 is the pie graph of fluid Supplying apparatus 1.As shown in Figure 6, in order to prevent pollution to substrate P and projection optical system PL, perhaps in order to prevent that substrate P from going up the pattern image deterioration of projection, fluid Supplying apparatus 1 possesses: filter the liquid 50 that for example reclaims with liquid withdrawal system 2, be used to remove the filtrator 20 of foreign matters in the liquid 50 after being reclaimed by liquid withdrawal system 2 etc., liquid 50 by filtrator 20 is heated to the heating arrangement 25 of set point of temperature, remove film degasser 24 with 50 li gases of heating arrangement 25 warmed-up liquid, liquid 50 temperature after handling with 24 degassings of film degasser are adjusted to the temperature adjustment device 22 that requires temperature, and force (forcing) pump 15.Make dissolving exist liquid 50 that gas concentration reduced by means of heating arrangement 25 by pipeline 12 delivery film degassers 24.And then with the liquid 50 after film degasser 24 degassing by pipeline 14 supplying temperature adjusting gears 22.And, film degasser 24 and gas outlet 13 are coupled together, discharge by the gas of removing (degassing) in the liquid 50.And temperature adjustment device 22 is set at liquid 50 temperature of supplying with spaces 56 for example and the about uniform temp of the indoor temperature of accommodating exposure device EX (for example 23 ℃).Supply pipe 3,10 is connected to temperature adjustment device 22, just will have adjusted the liquid 50 of temperature by means of force (forcing) pump 15 process supply pipes 3 (10) supply spaces 56 with temperature adjustment device 22.Also have, the action of this film degasser 24 is also controlled by control device CONT.
Fig. 7 is that the summary of expression film degasser 24 constitutes sectional view.71 inner Jie of shell are accommodated the hollow wire harness 72 of tubular with regulation space 73.Hollow wire harness 72 is that a plurality of straw shape hollow line films 74 are parallel bundled, and each hollow line gland 74 is formed by the high gas-premeable excellent material of hydrophobicity (for example, poly-tetramethyl amylene 1).Fixedly vacuum gap parts 75a, 75b at the two ends of shell 71 form enclosure space 76a, 76b in the outside, two ends of shell 71.Be provided with degassing mouth 77a, the 77b that is connected to the unshowned vacuum pump of figure at vacuum gap parts 75a, 75b.And, only form sealing 78a, 78b and make its enclosure space 76a, 76b at the two ends of shell 71, can make the inside of hollow line film 74 become decompression state respectively by means of the vacuum pump that connects the degassing mouthful 77a, 77b.The pipeline 79 that is connected with pipeline 12 in the internal configurations of hollow wire harness 79.At pipeline 79 a plurality of liquid are set and supply with hole 80, supply with hole 80 to space 81 feed fluids 50 that surround with sealing 78a, 78b and hollow wire harness 79 from liquid.Supply with hole 80 to space 81 feed fluids 50 from liquid continuously, liquid 50 is just as the past flows outside of layer across parallel bundled hollow line film 74, and liquid 50 contacts with the outside surface of hollow line film 74.Hollow line film 74 is formed by the superior material of the high gas-premeable of hydrophobicity respectively as described above, so liquid 50 can not enter hollow line film 74 inboards, but by moving to the space 73 in hollow wire harness 72 outsides between each hollow line film 74.On the other hand, dissolved gases in the liquid 50 (molecule) is because hollow line film 74 inboards have become the result of decompression state (about 20Torr), and institute is each hollow line film 74 medial movement (being absorbed) in the past.So, across the gas componant of from liquid 50, removing (degassing) during 74 layers of the hollow line films, just shown in arrow 83, discharge from the degassing mouthful 77a, 77b by enclosure space 76a, 76b from the two ends of hollow line bundle 79.And the liquid 50 after the degassing is handled goes out 82 by pipeline 14 supplying temperature adjusting gears 22 from the liquid of being located at shell 51.
As above theory is crossed, in the fluid Supplying apparatus 1 of feed fluid 50 between projection optical system PL and substrate P, the film degasser 24 of 50 li gases of (degassing) liquid is removed in setting, thereby liquid 50 is fully supplied with this liquid 50 between projection optical system PL and the substrate P degassing back.So, can suppress to be full of the 50 li gassings of liquid between projection optical system PL and the substrate P in the exposure-processed.And, in the stream between film degasser 24 and space 56, even hypothesis such as the top end face of projection optical system PL 7 or substrate P surface is gassing for a certain reason, because fully Tuo Qi liquid 50 flows at stream and space 56, can absorb and remove the bubble that liquid 50 exists in stream.Like this,, worsen, be manufactured with the device of high pattern precision so can prevent to result from the pattern image of bubble because can in the liquid 50 on the exposure light EL light path, there not be exposure-processed under the state of bubble.
In the present embodiment, with heating arrangement 25 heating liquids, reduce concentration of dissolved gas afterwards to film degasser 24 feed fluids, manage to improve the liquid degassing degree of supplying with space 56, yet also can replace heating arrangement 25 that concentration of dissolved gas is reduced afterwards to film degasser 24 feed fluids with reliever.And, the sufficiently high occasion of degassing ability of film degasser 24, it is also passable to introduce film degasser 24 to the liquid that has passed through filtrator 20 through heating arrangement and reliever.
In the various embodiments described above, above-mentioned ozzle shape is not particularly limited, and for example also can manage to carry out with two pairs of ozzles on the long limit of top ends 60A the supply or the recovery of liquid 50.Also have, at this moment, for will be from+directions X, or-any direction of directions X also all carries out the supply and the recovery of liquid 50, so up and down and row arrangement supply pipe mouth and to reclaim ozzle good.
And, as shown in Figure 8, also can clip top ends 60A and supply ozzle 31,32 is set respectively in the Y direction both sides and reclaim ozzle 33,34.Supply with ozzles and reclaim ozzle by means of these, though when stepping is moved when the non-direction of scanning of substrate P (Y direction) is mobile, also can be to feed fluid 50 stably between projection optical system PL and the substrate P.
In the above-described embodiment, though constitute is to make that removing device (heating arrangement 21, reliever 23, film degasser 24) with gas has carried out the liquid that gas removes and do not contact the space of just supplying with between projection optics line PL and the substrate P 56 with gas, but know that all carrying out gas fully removes, in the liquid dissolved gases amount just seldom, it is also passable to touch gas in the stream of part or all.That is, accomplish to remove between device and the space 56 and do not touch liquid, just do not need to be used to suppress the structure of bubble at gas.
In the above-described embodiment, the liquid that is reclaimed by liquid withdrawal system 2 has become the mechanism of rework solution body feeding 1, however this not necessarily need, also can send new pure water, the discarded liquid that reclaims with liquid withdrawal system 2 to fluid Supplying apparatus 1.
In the above-described embodiment, the relevant situation that forms the immersion liquid district when substrate P is exposed in image planes one side of projection optical system PL has been described, yet when not only substrate P being exposed but also sometimes image planes one side at projection optical system PL also disposes liquid under various measurement components that are provided with on the substrate table PST (Z objective table 51) and survey sensor situation, is situated between and carries out various measurements with this liquid.Carrying out such measurement occasion, also the way that suppresses gassing in the liquid with above-mentioned same employing prevents to result from the measuring error of bubble etc.
Fluid Supplying apparatus and liquid withdrawal system in the foregoing description are, the ozzle of supply is arranged in projection optical system PL projection in zone both sides and reclaim ozzle, direction of scanning according to substrate P, from projection in zone-square side feed fluid, structure from the opposing party side withdrawal liquid, yet the structure of fluid Supplying apparatus and liquid withdrawal system has more than and is limited to this, can keep liquid just partly between projection optical system PL and substrate P.
Also have; substrate P with regard to the various embodiments described above; the mask of using in the glass substrate that the not only semiconductor wafer of semiconductor devices manufacturing usefulness, and application display device is used, the potsherd that thin-film head is used or the exposure device or the master (synthetic water wafer, silicon wafer) of reticle mask etc.
And, in the above-described embodiment, adopt and locally to be full of exposure device between projection optical system PL and the substrate P with liquid, yet to the immersion exposure device that the substrate objective table that keeps exposure object is moved, liquid tank with forming prescribed depth on the objective table wherein keeps the immersion exposure device of substrate also can use the present invention.In liquid bath, make the structure and the exposure actions of the immersion exposure device that the substrate objective table that keeps exposure object moves, for example open on the flat 6-124873 communique and be documented the spy, and, on objective table, form the liquid tank of prescribed depth, the structure and the exposure actions that wherein keep the immersion exposure device of substrate, for example open on flat 10-303114 communique and the United States Patent (USP) 5825043 and be documented the spy, the border applies for that the record content of quoting these documents is as a part described herein in appointment or the allowed by law scope of selected state home respectively.
With regard to exposure device EX, except that the step-scan mode scanning exposure apparatus (scanning ledex) of the pattern that makes mask M and the synchronous motion scan exposed mask of substrate P M, also can be applied in mask M and substrate P stationary state the pattern of mask M-and exposure, the stepping repetitive mode projection aligner (ledex) of substrate P is moved in the order stepping.And the present invention also can be applied to the overlapping partly step switch mode exposure device that duplicates at least 2 patterns on substrate P.
And the present invention also can be applied to the desk-top exposure device of paired loading.The structure and the exposure actions of the paired desk-top exposure device of loading, for example being disclosed in the spy opens flat 10-163099 number and spy and opens (corresponding United States Patent (USP) 6341007,6400441,65499269 and 6590634) flat 10-214783 number, special table 2000-505958 number (corresponding United States Patent (USP) 5969441) or on United States Patent (USP) 6208407, the border applies for that the record content of quoting these documents is as a part described herein in appointment or the selected state law allowed band home respectively.
Kind with regard to exposure device EX; be not only limited to the exposure device of the semiconductor element manufacturing usefulness of exposure semiconductor element pattern on substrate P, also can be widely used in the liquid crystal display cells manufacturing with or the exposure device of display device manufacturing usefulness and being used to make the exposure device etc. of thin-film head, imaging apparatus (CCD) or reticle mask or mask etc.
Linear motor is used in the occasion of substrate table PST and mask platform MST, which kind of also can use used the objective table of the maglev type of the air-flotation type of air bearing and Lorentz force or reactance power.And the type that each objective table PST, MST also can move along guide rail also can be a no rail type of not establishing guide rail.Use the example of linear motor to be disclosed on United States Patent (USP) 5623853 and 5528118 on the objective table, the border applies for that the record content of quoting these documents is as a part described herein in appointment or the selected state law allowed band home respectively.
With regard to the driving mechanism of each objective table PST, MST, also can use the opposed planar motors that drives each objective table PST, MST by electromagnetic force in armature unit of the magnet unit and the two-dimensional arrangement coil of two-dimensional arrangement magnet.At this moment, the either party of magnet unit and armature unit is connected to objective table PST, MST, all-moving surface one side that the opposing party of magnet unit and armature unit is located at objective table PST, MST just.
The reacting force takes place with moving of substrate table PST, also can with support part mechanically earthward (the earth) release make it can not pass to projection optical system PL.The disposal route of this reacting force, for example open on the flat 8-166475 communique (corresponding United States Patent (USP) 5528118) detailed disclosure is arranged the spy, the border applies for that the record content of quoting these documents is as a part described herein in appointment or the selected state law allowed band home respectively.
The reacting force takes place with moving of mask platform MST, also can with support part mechanically earthward (the earth) release make it can not pass to projection optical system PL.The disposal route of this reacting force, for example on the flat 8-330224 communique of spy (corresponding United States Patent (USP) 5874820), detailed disclosure is arranged, the border applies for that the record content of quoting these documents is as a part described herein in appointment or the selected state law allowed band home respectively.
As described above, the exposure device EX of the embodiment of the present application comprises that by assembling the various subsystems of each inscape of enumerating in the application's patent claimed range make, so that have the mechanical precision of regulation, electric precision and optical accuracy.For these guarantee various precision, in the front and back of this assembling, carry out adjustment for the optical accuracy of reaching relevant various optical system, for the adjustment of the mechanical precisions of reaching relevant various machinery system, and for the adjustment of the electric precision of reaching various electric systems.Comprise that the mutual mechanical connection of various subsystem, wiring connect and the pipe arrangement connection of pneumatic circuit etc. by the operation of various subsystems assembling exposure devices.Before operation, much less the operation of each each subsystem of self-assembly is arranged also by various subsystem assembling exposure devices.After the operation of various subsystem assembling exposure devices finishes, comprehensively adjust, guarantee various precision as exposure device integral body.Also have, the manufacturing of carrying out exposure device in the toilet of management temperature and cleanliness factor etc. is desirable.
Micro elements such as semiconductor devices, as shown in Figure 9, through the step 201 of the functional performance design of carrying out micro element, make step 202, make substrate as the step 203 of device stock, the pattern of mask is made exposure-processed step 204, device installation step (comprising scribing operation, welding sequence, packaging process) 205 and the detection operation 206 etc. of substrate exposure with the exposure device EX of the foregoing description based on the mask (reticle mask) of this design procedure.
According to the present invention, because be provided with the bubble restraining device of gassing in the liquid that suppresses between projection optical system and the substrate, because can in the liquid on the exposure light light path, not exist the state of bubble to carry out exposure-processed, worsen so can prevent to result from the pattern image of bubble, can make the device of high pattern precision.
Claims (16)
1. a method of making device comprises that liquid immerses the exposure substrate,
It is characterized in that comprising step:
Remove the gas in the liquid;
The liquid of removing gas is supplied to a space;
Make exposing light beam shine substrate described substrate is carried out liquid immersion exposure by the liquid that offers this space.
2. according to the method for the described manufacturing device of claim 1, it is characterized in that above-mentioned step of removing the gas in the liquid comprises the dissolved gases of removing in the aforesaid liquid.
3. according to the method for the described manufacturing device of claim 1, it is characterized in that above-mentioned step of removing the gas in the liquid comprises aforesaid liquid is outgased.
4. according to the method for the described manufacturing device of claim 3, it is characterized in that the above-mentioned degassing is to utilize the film degasser to carry out.
5. according to the method for the described manufacturing device of claim 4, it is characterized in that above-mentioned film degasser has hollow fiber elements.
6. according to the method for the described manufacturing device of claim 3, it is characterized in that the degassing parts of aforesaid liquid degassing use permeable gas liquid impermeable carry out.
7. according to the method for the described manufacturing device of claim 2, it is characterized in that the above-mentioned gas of removing in the liquid comprises heating liquid.
8. according to the method for the described manufacturing device of claim 2, it is characterized in that the above-mentioned gas of removing in the liquid comprises the pressure that reduces liquid.
9. according to the method for the described manufacturing device of claim 1, adjust fluid temperature after it is characterized in that also being included in the gas of removing in the liquid
The liquid that wherein will adjust after the temperature is supplied with above-mentioned space.
10. according to the method for each described manufacturing device in the claim 1～9, it is characterized in that above-mentioned gas comprises nitrogen.
11., it is characterized in that above-mentioned gas comprises oxygen according to the method for each described manufacturing device in the claim 1～9.
12. according to the method for each described manufacturing device in the claim 1～9, it is characterized in that carrying out the above-mentioned gas of removing in the liquid like this, make that dissolved gases is not more than scheduled volume in the aforesaid liquid.
13., it is characterized in that above-mentioned dissolved gases comprises nitrogen according to the method for the described manufacturing device of claim 12.
14., it is characterized in that supplying with the nitrogen content that dissolves in the liquid in above-mentioned space and be not more than 13ppm according to the method for the described manufacturing device of claim 13.
15., it is characterized in that above-mentioned dissolved gases comprises oxygen according to the method for the described manufacturing device of claim 12.
16., it is characterized in that to supply with the oxygen content of dissolving in the liquid in above-mentioned space and be not more than 7.8ppm according to the method for the described manufacturing device of claim 15.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002357961 | 2002-12-10 | ||
| JP2002357961 | 2002-12-10 | ||
| JP2003002820 | 2003-01-09 | ||
| JP2003049367 | 2003-02-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003801053966A Division CN100390935C (en) | 2002-12-10 | 2003-12-02 | Exposure apparatus and method for producing device |
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| Publication Number | Publication Date |
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| CN101101455A true CN101101455A (en) | 2008-01-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2007101383468A Pending CN101101455A (en) | 2002-12-10 | 2003-12-02 | Method for producing device |
| CNB2003801053966A Expired - Fee Related CN100390935C (en) | 2002-12-10 | 2003-12-02 | Exposure apparatus and method for producing device |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2003801053966A Expired - Fee Related CN100390935C (en) | 2002-12-10 | 2003-12-02 | Exposure apparatus and method for producing device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101943860A (en) * | 2009-06-08 | 2011-01-12 | 罗门哈斯电子材料有限公司 | Lithographic process |
| CN103034074A (en) * | 2012-12-26 | 2013-04-10 | 清华大学 | Double silicon wafer platform exchange system for photoetching machine with immersion-liquid recovery devices |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06124873A (en) * | 1992-10-09 | 1994-05-06 | Canon Inc | Liquid-soaking type projection exposure apparatus |
| WO1999049504A1 (en) * | 1998-03-26 | 1999-09-30 | Nikon Corporation | Projection exposure method and system |
-
2003
- 2003-12-02 CN CNA2007101383468A patent/CN101101455A/en active Pending
- 2003-12-02 CN CNB2003801053966A patent/CN100390935C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101943860A (en) * | 2009-06-08 | 2011-01-12 | 罗门哈斯电子材料有限公司 | Lithographic process |
| CN101943860B (en) * | 2009-06-08 | 2013-12-11 | 罗门哈斯电子材料有限公司 | Processes for photolithography |
| CN103034074A (en) * | 2012-12-26 | 2013-04-10 | 清华大学 | Double silicon wafer platform exchange system for photoetching machine with immersion-liquid recovery devices |
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| Publication number | Publication date |
|---|---|
| CN1723536A (en) | 2006-01-18 |
| CN100390935C (en) | 2008-05-28 |
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