CN101097924A - Tft array with photosensitive passivation layer - Google Patents
Tft array with photosensitive passivation layer Download PDFInfo
- Publication number
- CN101097924A CN101097924A CNA2006101667978A CN200610166797A CN101097924A CN 101097924 A CN101097924 A CN 101097924A CN A2006101667978 A CNA2006101667978 A CN A2006101667978A CN 200610166797 A CN200610166797 A CN 200610166797A CN 101097924 A CN101097924 A CN 101097924A
- Authority
- CN
- China
- Prior art keywords
- group
- passivation layer
- drain electrode
- photosensitive group
- tft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002161 passivation Methods 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- -1 silicon alkoxide Chemical class 0.000 claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 150000004703 alkoxides Chemical class 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 150000001875 compounds Chemical class 0.000 claims abstract description 23
- 239000010409 thin film Substances 0.000 claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 claims abstract description 17
- 230000008569 process Effects 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims description 33
- 239000000843 powder Substances 0.000 claims description 21
- 239000011159 matrix material Substances 0.000 claims description 20
- 238000005516 engineering process Methods 0.000 claims description 15
- 238000004132 cross linking Methods 0.000 claims description 14
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 claims description 12
- NIXOWILDQLNWCW-UHFFFAOYSA-M acrylate group Chemical group C(C=C)(=O)[O-] NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 11
- 125000003700 epoxy group Chemical group 0.000 claims description 11
- 125000003566 oxetanyl group Chemical group 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000012212 insulator Substances 0.000 claims description 9
- 238000010422 painting Methods 0.000 claims description 9
- 239000003999 initiator Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical group C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 claims description 6
- 239000012965 benzophenone Substances 0.000 claims description 6
- 150000001768 cations Chemical class 0.000 claims description 6
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 claims description 6
- 239000012954 diazonium Substances 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- 229920000592 inorganic polymer Polymers 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229920000620 organic polymer Polymers 0.000 claims description 4
- 229920000548 poly(silane) polymer Polymers 0.000 claims description 4
- 229920000058 polyacrylate Polymers 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 31
- 238000002360 preparation method Methods 0.000 abstract description 4
- 238000000059 patterning Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 111
- 239000000203 mixture Substances 0.000 description 14
- 239000011810 insulating material Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 12
- 238000001259 photo etching Methods 0.000 description 12
- 239000010936 titanium Substances 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000009849 deactivation Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- VVTQWTOTJWCYQT-UHFFFAOYSA-N alumane;neodymium Chemical compound [AlH3].[Nd] VVTQWTOTJWCYQT-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- 238000000935 solvent evaporation Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 150000002921 oxetanes Chemical class 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035807 sensation Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
A thin film transistor (TFT) array substrate and a method for fabricating the thin film transistor (TFT) array substrate is disclosed, wherein a passivation layer is directly subjected to exposing and patterning processes without using any photoresist, thereby simplifying the fabrication process and ensuring reduced preparation costs. In particular, the method comprises a thin film transistor (TFT) array comprising: forming a gate line and a gate electrode on a substrate; forming a semiconductor layer to be insulated from the gate electrode, and overlapped with a portion of the gate electrode; forming a source electrode and a drain electrode on both sides of the semiconductor layer, respectively, while forming a data line intersecting with the gate line; forming a passivation layer over an entire upper surface of the substrate including the source electrode and the drain electrode using a sol compound of a metal alkoxide having a photosensitive group X and a silicon alkoxide having a photosensitive group Y; light-exposing and developing the passivation layer to form a contact hole through which the drain electrode is exposed; and forming a pixel electrode to be in contact with the drain electrode through the contact hole.
Description
Technical field
The present invention relates to a kind of liquid crystal display (LCD) device.More particularly, the present invention relates to a kind of thin-film transistor (TFT) array base palte and manufacture method thereof, wherein under the situation of not using any photoresist, directly passivation layer is exposed and composition technology, thereby simplified manufacturing process and guaranteed to have reduced preparation cost.
Background technology
Liquid crystal display (LCD) device receives much concern as panel display apparatus recently.Since its big contrast and the excellent adaptability that shows for gray level display or moving image, and the LCD device has been carried out big quantity research.
Because this LCD device can have less thickness, so they are applied in the ultra-thin display unit such as wall-hanging TV.The LCD device also since its with compare in light weight such as the cathode ray tube (CRT) monitor of Brown pipe monitor and power consumption quite little, and in multiple application, adopt, these application comprise the display unit that is used for battery-powered notebook computer, private mobile communication terminal, TV (TV) machine and airborne vehicle monitor.Because these advantages, the LCD device has been used as display unit of future generation and has received publicity.
This LCD device generally includes: thin-film transistor (TFT) array base palte wherein is formed with thin-film transistor, pixel electrode and holding capacitor on each pixel region that is limited by select lines and data wire; The color-filter layer array base palte is formed with color-filter layer and public electrode on it; And be plugged in liquid crystal layer between tft array substrate and the color-filter layer array base palte.When to these electrode application voltage, the liquid crystal molecule of liquid crystal layer rearranges, thereby control is by the amount of the light of liquid crystal layer transmission.The LCD device is based on this principle and display image.
The LCD device is formed with the multiple pattern that is used for operating means or circuit on substrate.In order to form these patterns, use photoetching process usually.
Described photoetching process comprises: apply the photoresist material to ultraviolet (UV) light sensation light on the thin layer that forms on the substrate that will form pattern thereon; With higher relatively temperature coated photoresist is carried out soft roasting (soft-bake), on soft roasting photoresist, applying exposed mask and photoresist is being exposed by the pattern that is formed in the exposed mask; Photoresist through exposure is developed and composition, and the photoresist through composition is carried out roasting (hard-bake) firmly with higher temperature; Use is carried out etching as mask to thin layer through the photoresist of composition, and removes photoresist by stripping technology.
Usually carry out five to seven photoetching for traditional tft array substrate, on substrate, to form select lines layer, gate insulating film, semiconductor layer, data line layer, passivation layer and pixel electrode.Make the increase of the quantity of photoetching process with photoresist make the chance of process error become big and material cost higher.For this reason, carry out big quantity research, and realize the raising of productivity ratio thus so that the frequency of utilization of photoetching minimizes.
The conventional method that is used to form tft array substrate is described below with reference to accompanying drawings.
Figure 1A to Fig. 1 C is the cutaway view that expression is used to make the method for traditional tft array substrate.
With reference to Figure 1A, deposit low-resistance metal material on glass substrate 11 at first.Use first exposed mask to carry out photoetching then, i.e. select lines (not shown), grid 12a and following storage electrode 32 to form a plurality of select lines layers.
Then, deposit inorganic insulating material on the entire upper surface of the glass substrate 11 that comprises grid 12a at high temperature, for example silicon nitride (SiNx) or Si oxide (SiOx) are to form gate insulating film 13.Subsequently,, and use second exposed mask that this amorphous silicon is carried out photoetching, come to form semiconductor layer 14 with the form of island (island) with the mode deposition of amorphous silicon on gate insulating film 13 that overlaps with grid 12a.
Realize the deposit of gate insulating film 13 and semiconductor layer 14 by common plasma reinforced chemical vapor deposition (PECVD).Next, another low-resistance metal material of deposit on the entire upper surface of the resulting structures that comprises semiconductor layer 14, and use the 3rd exposed mask to carry out photoetching to form data wire 15 and source electrode 15a and drain electrode 15b.
Data wire intersects with select lines, thereby limits unit pixel at the infall of data wire and select lines.Source electrode 15a and drain electrode each among the 15b all overlap with the edge of semiconductor layer 14.Grid 12a, gate insulating film 13, semiconductor layer 14 and source electrode 15a and drain electrode 15b is stacked together, to form the thin-film transistor that the voltage that imposes on unit pixel is carried out on/off operation.This thin-film transistor is positioned at the infall of data wire and select lines.
Then, the inorganic insulating material that deposit is selected from the group that comprises silicon nitride (SiNx) and Si oxide (SiOx) on the entire upper surface of the resulting structures that comprises data wire 15, the perhaps organic insulating material of selecting from the group that comprises benzocyclobutene (BCB) and propylene resin is to form passivation layer 16.
On passivation layer 16, apply light sensitive photoresist 19, then it is carried out soft curing process.Photoresist 19 is provided with under the state of the 4th exposed mask 20 with specific pattern, photoresist 19 is exposed to light selectively (for example, UV) shines down.Then, partly come photoresist 19 is carried out composition, carry out roasting firmly then by the photoresist that uses developing solution to remove through exposure.Remove the part of passing through to have carried out exposure of passivation layer 16 then, to form contact hole 20 through the photoresist of composition.Form contact hole 20, to expose drain electrode 15b by contact hole 20.
Carrying out with photoresist using remover that photoresist 19 is peeled off after photoetching forms contact hole 20 by making.
With reference to Fig. 1 C, the transparent conductive material of deposit such as indium tin oxide (ITO) or indium-zinc oxide (IZO) on the entire upper surface of the resulting structures that comprises passivation layer 16 carries out composition to form the pixel electrode 17 that is electrically connected with drain electrode 15b by contact hole 20 by photoetching to it then.At this moment, pixel electrode 17 is formed with storage electrode 32 and overlaps to form holding capacitor.As a result, finished the manufacturing of tft array substrate.
Yet the method that tft array substrate is made in above-mentioned traditional tft array substrate and above-mentioned traditional being used to has following variety of issue.
In order in the passivation layer of traditional tft array substrate, to form contact hole, need to carry out various technologies, for example photoresist applies, soft roasting, exposure, develop, roasting firmly and peel off.For this reason, it is complicated that whole technology becomes, thereby cause defective workmanship increase, processing time increase and manufacturing and material cost to increase.As a result, productivity ratio reduces.
Can use inorganic insulating material or organic insulating material to form passivation layer.Yet, use inorganic insulating material can cause the aperture ratio of resulting LCD device to reduce.
Specifically, when use has the inorganic insulating material of 6 to 8 high-k, between data wire and pixel electrode, can produce parasitic capacitance (Cdp) unfriendly.The parasitic capacitance that is generated (Cdp) causes the source to postpone (that is, data voltage level descends) and vertical crosstalk (that is the variation brightness that causes owing to the source delay).As a result, picture quality reduces.
Preventing to generate in the trial of Cdp, data wire and pixel electrode are formed be spaced apart from each other, thereby they can not overlap each other.Yet, owing to the area of each pixel electrode reduces, so the aperture of resulting LCD device another problem can occur than reduction.
Therefore, in order to increase the aperture ratio of LCD device, based on the pixel electrode that formation has maximum area, inevitably pixel electrode and data wire overlap each other.Owing to this reason, passivation layer must have low-k.For this reason, advised using organic insulating material to form passivation layer with low-k of 3 to 4.
As understanding from above-mentioned, compare with using inorganic insulating material, use organic insulating material formation passivation layer also relates to the painting method such as spin coating or slit coating (slit coating) except PECVD.The advantage of described painting method is, has simplified manufacturing process, reduced equipment cost and has prevented generation parasitic capacitance (Cdp).Yet the thickness of the passivation layer that forms by this painting method increases.Thereby, aspect light and handy, be restricted.
For example, when the inorganic insulating material (for example, silicon nitride (SiNx) or Si oxide (SiOx)) that has about 6 to about 8 dielectric constant when use formed passivation layer, this passivation layer had the thickness of 1500 to 5000 usually.On the other hand, when having the organic insulating material (for example, benzocyclobutene (BCB) and propylene resin) of about 3 to about 4 dielectric constant when use, passivation layer has the thickness of about 3 μ m usually.
Summary of the invention
Therefore, the present invention is devoted to a kind of thin-film transistor (TFT) array base palte and manufacture method thereof, and it has overcome the one or more problems that cause owing to the limitation of prior art and shortcoming basically.
The object of the present invention is to provide a kind of thin-film transistor array base-plate and manufacture method thereof, wherein can use insulating material to form passivation layer with little thickness with high-k, under the situation of not using any photoresist, this passivation layer is exposed and composition technology simultaneously, thereby simplified manufacturing process and guaranteed to reduce preparation cost.
Part proposed during attendant advantages of the present invention, purpose and feature will be described below, and will partly become clear for those skilled in the art when having read following explanation, perhaps can learn from enforcement of the present invention.Purpose of the present invention and other advantage can be achieved and obtain by the structure of specifically noting in writing specification and claim and accompanying drawing.
In order to realize these purposes with other advantage and according to purpose of the present invention, as enforcement and broadly described here, a kind of thin-film transistor (TFT) array comprises: be formed on select lines and grid on the substrate; Semiconductor layer, this semiconductor layer and described gate insulator also overlap with the part of described grid; Be respectively formed at source electrode and drain electrode on the both sides of described semiconductor layer, and with described select lines data line crossing; Passivation layer, this passivation layer are formed on the entire upper surface of the described substrate that comprises described source electrode and described drain electrode, and this passivation layer is made by the solation compound of the silicon alkoxide of metal alkoxide with photosensitive group X and tool photosensitive group Y; And the pixel electrode that contacts with described drain electrode, each among wherein said photosensitive group X and the Y all is select from the group that comprises two keys, triple bond, acrylate group, epoxide group and oxetanes (oxetane) group at least a.
In another aspect of this invention, a kind of thin-film transistor (TFT) array comprises: be formed on select lines and grid on the substrate; Semiconductor layer, this semiconductor layer and described gate insulator also overlap with the part of described grid; Be respectively formed at source electrode and drain electrode on the both sides of described semiconductor layer, and with described select lines data line crossing; Passivation layer, this passivation layer adopts the material with following structure, in this structure, scatters ultramicro powder in the polymeric matrix with photosensitive group X and photosensitive group Y; And the pixel electrode that contacts with described drain electrode, each among wherein said photosensitive group X and the Y all is select from the group that comprises two keys, triple bond, acrylate group, epoxide group and oxetane groups at least a.
In another aspect of this invention, the method for a kind of manufacturing thin-film transistor (TFT) array comprises: form select lines and grid on substrate; Form semiconductor layer, this semiconductor layer and described gate insulator and with the part overlapping of described grid; On the both sides of described semiconductor layer, form source electrode and drain electrode respectively, form and described select lines data line crossing simultaneously; Use has the solation compound of the silicon alkoxide of the metal alkoxide of photosensitive group X and tool photosensitive group Y, forms passivation layer on the entire upper surface of the described substrate that comprises described source electrode and described drain electrode; Described passivation layer is exposed and develops, expose the contact hole of described drain electrode with formation; And form and to treat the pixel electrode that contacts with described drain electrode by described contact hole, each among wherein said photosensitive group X and the Y all is select from the group that comprises pair keys, triple bond, acrylate group, epoxide group and oxetane groups at least a.
In still another aspect of the invention, the method for a kind of manufacturing thin-film transistor (TFT) array comprises: form select lines and grid on substrate; Form semiconductor layer, this semiconductor layer and described gate insulator and with the part overlapping of described grid; On the both sides of described semiconductor layer, form source electrode and drain electrode, form and described select lines data line crossing simultaneously; Use its structure in polymeric matrix, being scattered with the material of ultramicro powder, on the entire upper surface of the described substrate that comprises described source electrode and described drain electrode, form passivation layer with photosensitive group X and photosensitive group Y; Described passivation layer is exposed and develops, expose the contact hole of described drain electrode with formation; And form and to treat the pixel electrode that contacts with described drain electrode by described contact hole, each among wherein said photosensitive group X and the Y all is select from the group that comprises pair keys, triple bond, acrylate group, epoxide group and oxetane groups at least a.
Described polymeric matrix can be selected from following group, and this group comprises: the inorganic polymer that comprises poly(silicon aether) and polysilane; Comprise polyacrylate, polyimides and poly organic polymer; And inorganic/organic mixed polymer.Described ultramicro powder can be O
2, AlO
3Or MgO ultramicro powder.The dielectric constant of described passivation layer, transmissivity or thermal stability can be controlled according to the amount or the type of employed ultramicro powder.As mentioned above, can make for the material that in polymeric matrix, is scattered with ultramicro powder by the material that has the chemical network structure because of the combination between metal alkoxide and the silicon alkoxide or its structure according to passivation layer of the present invention.
The passivation layer of being made by described material is carried out exposure technology, between described photosensitive group X and described photosensitive group Y, to form photo-crosslinking.When carrying out composition, remove the photo-crosslinking part of described passivation layer by developing process.Therefore, the passivation layer of being made by this material not only has the film deactivation function, but also has photoresist (PR) function.As a result, need not apply such as photoresist, soft roasting, exposure, develop, the roasting firmly and various technologies peeled off.
Can use printing or painting method to form described passivation layer.
It should be understood that what provide above all is exemplary and explanat to general description of the present invention and detailed description given below, and aim to provide further specifying the present invention for required protection.
Description of drawings
Comprise accompanying drawing to provide, incorporate accompanying drawing into and constitute the application's a part further understanding of the present invention, accompanying drawing shows (a plurality of) of the present invention embodiment, and be used from specification one and explain principle of the present invention.In the accompanying drawings:
Figure 1A to Fig. 1 C is the cutaway view that expression is used to make the method for traditional tft array substrate;
Fig. 2 A to Fig. 2 C is that expression is used to make the cutaway view according to the method for tft array substrate of the present invention;
Fig. 3 is a view of representing to be used for according to an embodiment of the invention the material of passivation layer; And
Fig. 4 is a view of representing to be used for according to another embodiment of the present invention the material of passivation layer.
Embodiment
To describe in detail below and membrane according to the invention transistor (TFT) array base palte and the relevant the preferred embodiments of the present invention of method that are used to make this thin-film transistor (TFT) array base palte, its example shown in the drawings.As possible, in institute's drawings attached, use identical Reference numeral to represent same or analogous part.
Fig. 2 A to Fig. 2 C is that expression is used to make the cutaway view according to the method for tft array substrate of the present invention.Fig. 3 is a view of representing to be used for according to an embodiment of the invention the material of passivation layer.Fig. 4 is a view of representing to be used for according to another embodiment of the present invention the material of passivation layer.
Usually, tft array substrate comprises: select lines and from the grid of select lines branch; Semiconductor layer, it overlaps with gate insulator and with the part of grid by gate insulating film; With the select lines data line crossing; Source electrode and drain electrode from both sides data wire branch, that be respectively formed at semiconductor layer; And pixel electrode, it passes passivation layer and contacts with drain electrode.According to the present invention, as shown in Figure 3, use the material of the solation compound of metal alkoxide with photosensitive group X and silicon alkoxide as passivation layer with photosensitive group Y.
Photosensitive group X and Y can be select from following group at least a, and this group comprises: two keys (for example,
), triple bond (for example,
), acrylate group (for example,
), epoxide group (for example,
) and oxetane groups (for example,
).
The metal of metal alkoxide can be select from the group that comprises titanium (Ti), zirconium (Zr), yttrium (Y), aluminium (Al), hafnium (Hf), calcium (Ca) and magnesium (Mg) at least a.The dielectric constant of solation compound, transmissivity or thermal stability can be according to the content of silicon alkoxide and metal alkoxide than changing.
Select as another kind, figure 4 illustrates another material that is used for passivation layer.As shown in Figure 4, can use material to be used for passivation layer, in this structure, in polymeric matrix 200, scatter ultramicro powder 201 with photosensitive group X and photosensitive group Y with following structure.Ultramicro powder 201 can be O
2, AlO
3Or MgO ultramicro powder.Polymeric matrix can be select from following group at least a, and this group comprises: such as the inorganic polymer of poly(silicon aether) and polysilane; Such as polyacrylate, polyimides and poly organic polymer; And inorganic/organic mixed polymer.The dielectric constant of passivation layer, transmissivity or thermal stability can change according to the amount and the kind of employed ultramicro powder.
Passivation material can also comprise the radical photoinitiator (radical photo-initiator) that is selected from Benzophenone and acetophenone, perhaps is selected from the cation light initiator of aryl diazonium salts, diaryl diazol and triaryl diazol.When the passivation layer of being made by this material was exposed, photosensitive group X and Y be photo-crosslinking each other.During developing process subsequently, remove resulting photo-crosslinking part.
Shown in Fig. 2 A, at high temperature by sputter on substrate 111 deposit have low-resistance metal, for example copper (Cu), aluminium (Al), aluminium alloy, molybdenum (Mo), chromium (Cr), titanium (Ti), tantalum (Ta) or molybdenum-tungsten (MoW) such as aluminium-neodymium (AlNd).Illuvium is carried out composition technology, with the grid 112a that forms the select lines (not shown), branch out from select lines and be configured to the storage electrode parallel 132 with select lines.
Then, by the inorganic material of plasma reinforced chemical vapor deposition (PECVD) deposit such as silicon nitride (SiNx) or Si oxide (SiOx) on the entire upper surface of the substrate 111 that comprises grid 112a, to form gate insulating film 113.
Subsequently, deposition of amorphous silicon (a-Si) and be doped with the amorphous silicon (n+a-Si) of n type impurity on gate insulating film 113.By photoetching illuvium is carried out composition, to form semiconductor layer 114 and ohmic contact layer (not shown).
Deposit has low-resistance metal on the entire upper surface of the resulting structures that comprises semiconductor layer 114, for example copper (Cu), aluminium (Al), aluminium-neodymium (AlNd), molybdenum (Mo), chromium (Cr), titanium (Ti), tantalum (Ta) or molybdenum-tungsten (MoW).By photoetching illuvium is carried out composition, on the both sides of semiconductor layer 114, to form source electrode 115a and drain electrode 115b respectively.At this moment, form data wire 115, this data wire is integrally connected to source electrode 115a.
Described data wire intersects with select lines, thereby limits unit pixel at the infall of data wire and select lines.Grid 112a, gate insulating film 113, semiconductor layer 114, ohmic contact layer, source electrode 115a and drain electrode 115b have constituted the thin-film transistor (TFT) of the infall that is positioned at select lines and data wire.This TFT can be that its grid is positioned at top gate type TFT or the organic tft on the source/drain.
Subsequently, on the entire upper surface of the resulting structures that comprises TFT, form passivation layer 116.As mentioned above, can make for the material that in polymeric matrix, is scattered with ultramicro powder by the material that has the chemical network structure because of the combination between metal alkoxide and the silicon alkoxide or its structure according to passivation layer 116 of the present invention.The passivation layer of being made by this material 116 not only has the film deactivation function, but also has photoresist (PR) function.
At first, form passivation layer 116 with illustrating in greater detail use because of the material that the combination between metal alkoxide and the silicon alkoxide has the chemical network structure.In this case, by using printing or painting method on the entire upper surface of the structure that comprises source electrode 115a and drain electrode 115b, to apply metal alkoxide with photosensitive group X and solation compound with silicon alkoxide of photosensitive group Y.Under sufficiently high temperature, carry out soft baking, so that be present in the solvent evaporation in the solation compound, thus form passivation layer 116.
As shown in Figure 3, by to metal alkoxide with have in the silicon alkoxide of photosensitive group Y and add H with photosensitive group X
2O or ethanol and prepare the solation compound.In this case, metal alkoxide and silicon alkoxide combine, and have the solation compound of chemical network structure with formation.As a result, passivation layer 116 can be guaranteed excellent thermal stability.H
2O or ethanol are not only as solvent but also as catalyst.
Photosensitive group X and Y can be select from following group at least a, and this group comprises: two keys (for example,
), triple bond (for example,
), acrylate group (for example,
), epoxide group (for example,
) and oxetane groups (for example,
).
The metal of metal alkoxide can be select from following group at least a, and this group comprises: titanium (Ti), zirconium (Zr), yttrium (Y), aluminium (Al), hafnium (Hf), calcium (Ca) and magnesium (Mg).The R of metal alkoxide and silicon alkoxide can be alkyl (for example, CHC
3-, C
2H
5-, C
3H
7-..., C
nH
2n+1) or phenyl.
The dielectric constant of solation compound, transmissivity or thermal stability can be according to the content of silicon alkoxide and metal alkoxide than changing.Preferably, in order to form the structure with high aperture ratio, passivation layer can be made by the material with low-k.Therefore, content that can be by suitably adjusting silicon alkoxide and metal alkoxide is than obtaining this low-k.
Next, use its structure to form passivation layer with illustrating in greater detail for the material that in polymeric matrix, is scattered with ultramicro powder.Can form membrane material by using printing or painting method.Under sufficiently high temperature, carry out soft baking, so that be present in the solvent evaporation in the solation compound, thus form passivation layer 116.
Photosensitive group X and Y can be select from following group at least a, and this group comprises: two keys (for example,
), triple bond (for example,
), acrylate group (for example,
), epoxide group (for example,
) and oxetane groups (for example,
).
The dielectric constant of passivation layer, transmissivity or thermal stability can change according to the amount or the type of the ultramicro powder that scatters in polymeric matrix.Ultramicro powder 201 can be O
2, AlO
3Or MgO ultramicro powder.
After having finished soft baking, on soft roasting passivation layer, applying exposed mask 120 with predetermined pattern.Passivation layer through applying is exposed under ultraviolet (UV) line or the X ray.At this moment, photosensitive group X and Y because the exposure and photo-crosslinking.The material that is used for passivation layer according to the present invention has the feature of direct exposure.This passivation material also comprises the radical photoinitiator that is selected from Benzophenone and acetophenone, perhaps is selected from the cation light initiator of aryl diazonium salts, diaryl diazol and triaryl diazol.
Then, use alkaline development solution that passivation layer is developed such as KOH or NaOH.As a result, passivation layer be exposed and subsequently the part of photo-crosslinking be removed owing to it is dissolved in the developing solution.In this case, the unexposed portion of passivation layer still is retained.Realize developing process by using dipping, puddling (puddling) or injection method.
Shown in Fig. 2 B, remove exposed portion exposes drain electrode 115b with formation contact hole 120.After finishing contact hole 120, carry out under than soft roasting high temperature roasting firmly.
Use directly exposure and developing process to form contact hole on passivation layer, this has eliminated and has formed the necessity of additional photoresist, and avoided thus to apply such as photoresist, soft roasting, exposure, the polytechnic needs that develop, bake and peel off firmly.
Shown in Fig. 2 C, the transparent conductive material of deposit such as indium tin oxide (ITO) or indium-zinc oxide (IZO) on the entire upper surface of the passivation layer 116 that comprises contact hole 120 carries out composition to form the pixel electrode 117 that will electrically contact with drain electrode 115b to it then.At this moment, pixel electrode 117 is formed with storage electrode 132 and overlaps, to form holding capacitor.
Although not shown, will engage with relative substrate according to the tft array substrate that this process is made, so that they face with each other.Sealing fluid crystal layer in the space between the relative substrate of tft array substrate with this.This relative substrate comprises: black matrix (black matrix) layer that is used to prevent light leak; And color-filter layer, this color-filter layer is formed between the adjacent black matrix layer, has simultaneously with certain tactic colour filter (color resist) R, G and B.This relative substrate also comprises: protective layer (overcoat layer), and it is formed on the surfacing (level) to protect color-filter layer and to make color-filter layer on each color-filter layer; And public electrode, it is formed on the protective layer and generates electric field with the related pixel electrode with tft array substrate.
As understanding from the above description, according to tft array substrate of the present invention with for the manufacture of this The method of tft array substrate has following advantage.
At first, owing to not only have the film deactivation function according to passivation layer of the present invention, but also have Therefore the photoresist function needn't be formed for passivation layer is carried out the additional photoresist of composition. Therefore, Need to not apply such as photoresist, soft roasting, exposure, develop, the firmly roasting and various technologies peeled off, Thereby simplified manufacturing process and guaranteed to have reduced preparation and material cost.
Secondly, consist of the photosensitive group X of passivation layer and each among the Y and have reactivity, because of And cause crosslinked in the molecule. As a result, passivation material has been guaranteed the raising of heat endurance.
The 3rd, can easily control organic/inorganic with the content ratio of metal alkoxide according to silicon alkoxide But insulating properties coating, heat resistance, hardness and the transmissivity of material. Thereby, by these materials The passivation layer of making is suitable in liquid crystal display (LCD) device.
The 4th, can form passivation layer with printing or painting method. Therefore, with use PECVD Situation compare, can simplified manufacturing technique and to the management of the equipment that in this technology, uses.
It will be apparent to one skilled in the art that can do not break away from spirit of the present invention or In the situation of scope the present invention is made various modifications and changes. Thereby the present invention is intended to cover this These modifications and the change of invention are as long as they fall into the scope of claims and equivalent thereof In.
The application requires in the priority of the korean patent application No.10-2006-0061430 of submission on June 30th, 2006, by reference it is incorporated into as having carried out elaboration fully here at this.
Claims (33)
1, a kind of thin-film transistor (TFT) array, this thin film transistor (TFT) array comprises:
Be formed on select lines and grid on the substrate;
Semiconductor layer, this semiconductor layer and described gate insulator also overlap with the part of described grid;
Be respectively formed at source electrode and drain electrode on the both sides of described semiconductor layer, and with described select lines data line crossing;
Passivation layer, this passivation layer are formed on the entire upper surface of the described substrate that comprises described source electrode and described drain electrode, and this passivation layer is made by the solation compound with photosensitive group; And
The pixel electrode that contacts with described drain electrode.
2, tft array according to claim 1, wherein, described solation compound comprises metal alkoxide with photosensitive group and the silicon alkoxide with photosensitive group.
3, tft array according to claim 2, wherein, described metal alkoxide is select from the group that comprises Ti, Zr, Y, Al, Hf, Ca and Mg at least a.
4, tft array according to claim 1, wherein, described solation compound comprises metal alkoxide with photosensitive group X and has the silicon alkoxide of photosensitive group Y, and among wherein said photosensitive group X and the Y each all is select from the group that comprises two keys, triple bond, acrylate group, epoxide group and oxetane groups at least a.
5, tft array according to claim 4, wherein, the described photosensitive group X of described solation compound and Y photo-crosslinking in exposure technology.
6, tft array according to claim 5 wherein, is removed the described photo-crosslinking part of described solation compound.
7, tft array according to claim 2, wherein, the dielectric constant of described passivation layer, transmissivity or thermal stability according to the content of described metal alkoxide and described silicon alkoxide than changing.
8, tft array according to claim 1, wherein, described solation compound also comprises the radical photoinitiator that is selected from Benzophenone and acetophenone, perhaps is selected from the cation light initiator of aryl diazonium salts, diaryl diazol and triaryl diazol.
9, a kind of thin-film transistor (TFT) array, this thin film transistor (TFT) array comprises:
Be formed on select lines and grid on the substrate;
Semiconductor layer, this semiconductor layer and described gate insulator also overlap with the part of described grid;
Be respectively formed at source electrode and drain electrode on the both sides of described semiconductor layer, and with described select lines data line crossing;
Passivation layer, the structure of the material that this passivation layer adopts is to be scattered with ultramicro powder in having the polymeric matrix of photosensitive group; And
The pixel electrode that contacts with described drain electrode.
10, tft array according to claim 9, wherein, described polymeric matrix comprises photosensitive group X and Y, and among wherein said photosensitive group X and the Y each all is select from the group that comprises two keys, triple bond, acrylate group, epoxide group and oxetane groups at least a.
11, tft array according to claim 9, wherein, described ultramicro powder is selected from and comprises O
2, AlO
3Group with MgO.
12, tft array according to claim 9, wherein, described polymeric matrix is selected from following group, and this group comprises: the inorganic polymer that comprises poly(silicon aether) and polysilane; Comprise polyacrylate, polyimides and poly organic polymer; And inorganic/organic mixed polymer.
13, tft array according to claim 9, wherein, the described photosensitive group X of described passivation layer and Y photo-crosslinking in exposure technology.
14, tft array according to claim 13 wherein, is removed the described photo-crosslinking part of described passivation layer.
15, tft array according to claim 9, wherein, the dielectric constant of described passivation layer, transmissivity or thermal stability change according to the amount and the type of described ultramicro powder.
16, tft array according to claim 9, wherein, described polymeric matrix also comprises the radical photoinitiator that is selected from Benzophenone and acetophenone, perhaps is selected from the cation light initiator of aryl diazonium salts, diaryl diazol and triaryl diazol.
17, the method for a kind of manufacturing thin-film transistor (TFT) array, this method comprises:
On substrate, form select lines and grid;
Form semiconductor layer, this semiconductor layer and described gate insulator and with the part overlapping of described grid;
On the both sides of described semiconductor layer, form source electrode and drain electrode respectively, form and described select lines data line crossing simultaneously;
Use has the solation compound of photosensitive group, forms passivation layer on the entire upper surface of the described substrate that comprises described source electrode and described drain electrode;
Described passivation layer is exposed and develops, expose the contact hole of described drain electrode with formation; And
The pixel electrode that formation will contact with described drain electrode by described contact hole.
18, method according to claim 17, wherein, described solation compound comprises metal alkoxide with photosensitive group X and has the silicon alkoxide of photosensitive group Y, and among wherein said photosensitive group X and the Y each all is select from the group that comprises two keys, triple bond, acrylate group, epoxide group and oxetane groups at least a.
19, method according to claim 18, wherein, the metal of described metal alkoxide is select from the group that comprises Ti, Zr, Y, Al, Hf, Ca and Mg at least a.
20, method according to claim 18, wherein, the described photosensitive group X of described solation compound and Y photo-crosslinking in exposure technology, and in developing process, remove the described photo-crosslinking part of described solation compound from described passivation layer.
21, method according to claim 17 wherein, uses alkaline development solution to carry out the developing process of described passivation layer.
22, method according to claim 18, wherein, the dielectric constant of described solation compound, transmissivity or thermal stability according to the content of described silicon alkoxide and described metal alkoxide than changing.
23, method according to claim 17 wherein, forms described passivation layer by using printing or painting method.
24, method according to claim 17, wherein, described solation compound also comprises the radical photoinitiator that is selected from Benzophenone and acetophenone, perhaps is selected from the cation light initiator of aryl diazonium salts, diaryl diazol and triaryl diazol.
25, the method for a kind of manufacturing thin-film transistor (TFT) array, this method comprises:
On substrate, form select lines and grid;
Form semiconductor layer, this semiconductor layer and described gate insulator and with the part overlapping of described grid;
On the both sides of described semiconductor layer, form source electrode and drain electrode, form and described select lines data line crossing simultaneously;
Use its structure in having the polymeric matrix of photosensitive group, being scattered with the material of ultramicro powder, on the entire upper surface of the described substrate that comprises described source electrode and described drain electrode, form passivation layer;
Described passivation layer is exposed and develops, expose the contact hole of described drain electrode with formation; And
The pixel electrode that formation will contact with described drain electrode by described contact hole.
26, method according to claim 25, wherein, described polymeric matrix comprises photosensitive group X and Y, and among wherein said photosensitive group X and the Y each all is select from the group that comprises two keys, triple bond, acrylate group, epoxide group and oxetane groups at least a.
27, method according to claim 25, wherein, described ultramicro powder is selected from and comprises O
2, AlO
3Group with MgO.
28, method according to claim 25, wherein, described polymeric matrix is selected from following group, and this group comprises: the inorganic polymer that comprises poly(silicon aether) and polysilane; Comprise polyacrylate, polyimides and poly organic polymer; And inorganic/organic mixed polymer.
29, method according to claim 25, wherein, described photosensitive group X and Y photo-crosslinking in exposure technology, and in developing process, remove described photo-crosslinking part from described passivation layer.
30, method according to claim 25 wherein, uses alkaline development solution to carry out the developing process of described passivation layer.
31, method according to claim 25, wherein, the dielectric constant of described ultramicro powder, transmissivity or thermal stability according to the content of described silicon alkoxide and described metal alkoxide than changing.
32, method according to claim 25 wherein, forms described passivation layer by using printing or painting method.
33, method according to claim 25, wherein, described polymeric matrix also comprises the radical photoinitiator that is selected from Benzophenone and acetophenone, perhaps is selected from the cation light initiator of aryl diazonium salts, diaryl diazol and triaryl diazol.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2006-0061430 | 2006-06-30 | ||
KR1020060061430A KR101255512B1 (en) | 2006-06-30 | 2006-06-30 | Method For Fabricating Thin Film Transistor Array Substrate |
KR1020060061430 | 2006-06-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101097924A true CN101097924A (en) | 2008-01-02 |
CN101097924B CN101097924B (en) | 2011-10-26 |
Family
ID=37671557
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006101667978A Expired - Fee Related CN101097924B (en) | 2006-06-30 | 2006-11-30 | Tft array with photosensitive passivation layer |
Country Status (5)
Country | Link |
---|---|
US (2) | US7977676B2 (en) |
JP (1) | JP4772653B2 (en) |
KR (1) | KR101255512B1 (en) |
CN (1) | CN101097924B (en) |
GB (1) | GB2439599B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102117767A (en) * | 2010-12-29 | 2011-07-06 | 上海大学 | Fully transparent TFT (Thin Film Transistor) active matrix manufacturing method based on colloidal sol mode |
CN102456573A (en) * | 2010-10-22 | 2012-05-16 | 元太科技工业股份有限公司 | Manufacturing method for thin film transistor |
US9972719B1 (en) | 2016-11-02 | 2018-05-15 | Microcosm Technology Co., Ltd. | Laminate structure of thin film transistor |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20100028367A (en) * | 2008-09-04 | 2010-03-12 | 삼성전자주식회사 | Thin film transistor array panel and method for manufacturing the same |
JP2013021165A (en) * | 2011-07-12 | 2013-01-31 | Sony Corp | Mask for vapor deposition, manufacturing method of mask for vapor deposition, electronic element, and manufacturing method of electronic element |
JP6015389B2 (en) | 2012-11-30 | 2016-10-26 | 株式会社リコー | Field effect transistor, display element, image display device, and system |
US9023683B2 (en) * | 2013-05-13 | 2015-05-05 | Sharp Laboratories Of America, Inc. | Organic semiconductor transistor with epoxy-based organic resin planarization layer |
JP6642657B2 (en) * | 2013-10-30 | 2020-02-12 | 株式会社リコー | Field effect transistor, display element, image display device, and system |
US20160276374A1 (en) * | 2013-10-31 | 2016-09-22 | Sakai Display Products Corporation | Active Matrix Substrate, Display Apparatus and Manufacturing Method for Active Matrix Substrate |
JP6238844B2 (en) * | 2014-06-17 | 2017-11-29 | オリンパス株式会社 | Surgical manipulator operating device and surgical manipulator system |
KR102377173B1 (en) * | 2015-08-25 | 2022-03-22 | 엘지디스플레이 주식회사 | Light Emitting Diode Display Device |
JP6269768B2 (en) * | 2016-09-29 | 2018-01-31 | 株式会社リコー | Coating liquid for insulating film formation |
KR20220065135A (en) | 2020-11-12 | 2022-05-20 | 삼성디스플레이 주식회사 | Display apparatus and manufacturing the same |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3640093A (en) * | 1969-03-10 | 1972-02-08 | Owens Illinois Inc | Process of converting metalorganic compounds and high purity products obtained therefrom |
JP3541026B2 (en) | 1995-08-11 | 2004-07-07 | シャープ株式会社 | Liquid crystal display device and active matrix substrate |
JP2000241831A (en) * | 1999-02-18 | 2000-09-08 | Advanced Display Inc | Reflection type liquid crystal display device and its production |
JP3488681B2 (en) * | 1999-10-26 | 2004-01-19 | シャープ株式会社 | Liquid crystal display |
EP1331517B1 (en) * | 2000-10-31 | 2010-08-18 | Sumitomo Bakelite Co., Ltd. | Positive photosensitive resin composition, process for its preparation, and semiconductor devices |
JP2002311591A (en) * | 2001-04-18 | 2002-10-23 | Clariant (Japan) Kk | Photosensitive composition used for forming interlayer dielectric |
US20050247472A1 (en) * | 2002-01-22 | 2005-11-10 | Helfer Jeffrey L | Magnetically shielded conductor |
JP2003218361A (en) | 2002-01-28 | 2003-07-31 | Konica Corp | Organic transistor element, active driving element and display medium comprising it |
JP2006502322A (en) * | 2002-02-25 | 2006-01-19 | ジェンテックス コーポレーション | Multifunctional protective fabric and decontamination method (cross-reference of related applications) This patent application claims the priority date benefit of US Provisional Application 60 / 360,050, filed February 25,2002. |
JP4479381B2 (en) * | 2003-09-24 | 2010-06-09 | セイコーエプソン株式会社 | Electro-optical device, method of manufacturing electro-optical device, and electronic apparatus |
US7170093B2 (en) | 2004-11-05 | 2007-01-30 | Xerox Corporation | Dielectric materials for electronic devices |
KR101209049B1 (en) * | 2004-12-24 | 2012-12-07 | 스미또모 가가꾸 가부시끼가이샤 | Photosensitive resin and thin film panel comprising pattern made of the photosensitive resin and method for manufacturing the thin film panel |
-
2006
- 2006-06-30 KR KR1020060061430A patent/KR101255512B1/en not_active IP Right Cessation
- 2006-11-29 GB GB0623876A patent/GB2439599B/en not_active Expired - Fee Related
- 2006-11-30 CN CN2006101667978A patent/CN101097924B/en not_active Expired - Fee Related
- 2006-12-15 JP JP2006338218A patent/JP4772653B2/en not_active Expired - Fee Related
- 2006-12-27 US US11/646,718 patent/US7977676B2/en not_active Expired - Fee Related
-
2011
- 2011-06-08 US US13/155,972 patent/US8551825B2/en active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102456573A (en) * | 2010-10-22 | 2012-05-16 | 元太科技工业股份有限公司 | Manufacturing method for thin film transistor |
CN102117767A (en) * | 2010-12-29 | 2011-07-06 | 上海大学 | Fully transparent TFT (Thin Film Transistor) active matrix manufacturing method based on colloidal sol mode |
US9972719B1 (en) | 2016-11-02 | 2018-05-15 | Microcosm Technology Co., Ltd. | Laminate structure of thin film transistor |
Also Published As
Publication number | Publication date |
---|---|
US8551825B2 (en) | 2013-10-08 |
GB2439599B (en) | 2008-11-05 |
JP4772653B2 (en) | 2011-09-14 |
JP2008016802A (en) | 2008-01-24 |
US7977676B2 (en) | 2011-07-12 |
KR20080002543A (en) | 2008-01-04 |
GB2439599A (en) | 2008-01-02 |
US20080001152A1 (en) | 2008-01-03 |
US20110237010A1 (en) | 2011-09-29 |
KR101255512B1 (en) | 2013-04-16 |
CN101097924B (en) | 2011-10-26 |
GB0623876D0 (en) | 2007-01-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101097924B (en) | Tft array with photosensitive passivation layer | |
CN100388104C (en) | Thin film transistor array substrate and fabricating method thereof | |
CN101071263B (en) | Apparatus for manufacturing display panel and method for manufacturing the same | |
KR101255616B1 (en) | Multi-tone optical mask, method of manufacturing the same and method of manufacturing thin film transistor substrate using the same | |
EP1933385B1 (en) | Thin film transistor, thin film transistor substrate, and method of manufacturing the same | |
USRE43819E1 (en) | Thin film transistor array substrate and method of fabricating the same | |
CN100449388C (en) | Liquid crystal display device and method for fabricating the same | |
KR101279927B1 (en) | Array substrate for liquid crystal display device and method of fabricating the same | |
KR100905470B1 (en) | Thin film transistor array panel | |
US7507593B2 (en) | Liquid crystal display device and method for fabricating the same | |
US6853433B2 (en) | Liquid crystal display device having soda-lime glass and method of fabricating the same | |
JP4808654B2 (en) | Method for manufacturing array circuit board | |
US20200348784A1 (en) | Touch display substrate, method of manufacturing the same and display device | |
US6940567B2 (en) | Liquid crystal display device having reduced optical pumping current and method of fabricating the same | |
KR100669093B1 (en) | Method of Fabricating Liquid Crystal Display Device | |
CN102044490A (en) | Fabricating method of thin film transistor array substrate | |
KR101055201B1 (en) | Manufacturing method of COT type liquid crystal display device | |
KR101157965B1 (en) | Method of manufacturing Liquid Crystal Display Device | |
KR20070104090A (en) | Method of fabricating the array substrate for liquid crystal display device using liquid type organic semiconductor material | |
KR100983593B1 (en) | Method For Fabricating Liquid Crystal Display Device | |
KR20080000752A (en) | Array substrate for liquid crystal display device and method of fabricating the same | |
KR100492728B1 (en) | A liquid crystal display device having partially removed activation layer in drain region and method of fabricating thereof | |
KR101045462B1 (en) | Method for fabricating thin film transistor | |
KR20060120886A (en) | A lcd device, a color filter plate used in this and a fabricating method with the same | |
KR20050068886A (en) | The array substrate and the fabrication method for lcd |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111026 Termination date: 20211130 |
|
CF01 | Termination of patent right due to non-payment of annual fee |