CN101097849B - Method for processing outer periphery of substrate and apparatus thereof - Google Patents

Abstract

To enhance a removing efficiency of unnecessary matters on a peripheral part of a substrate ( 90 ) such as wafer and to prevent particles from adhering to the substrate ( 90 ). A reactive gas is jetted out from a jet nozzle ( 75 ) toward a target spot (P) of the peripheral part of the substrate ( 90 ) in such a way that the reactive gas is made to flow approximately along a circumferential direction at the target spot (P) of the substrate ( 90 ) as viewed from a direction orthogonal to the substrate ( 90 ). Gases near the target spot (P) are sucked by a suction nozzle ( 76 ) along approximately the circumferential direction at a downstream side of the target spot (P).

Description

The method and apparatus that is used for the peripheral part of treatment substrate

Technical field

The present invention relates to be used to remove the method that is coated in such as on the peripheral part of the substrate of semiconductor wafer, liquid crystal display substrate etc. such as the unwanted material of organic membrane.

Background technology

As being used for such as the thin film coated of dielectric film, organic protection layer, polyimides or be deposited on such as the means on the substrate of for example semiconductor wafer, LCD glass substrate etc.; known several different methods/processing is as spin-coat process, utilize the method etc. of the thin film deposition of CVD and PVD.Yet, in spin coating technique, coating substance on the peripheral part of substrate than on middle body, applying thicklyer, thereby, peripheral part swelling.And, for example being used as at plasma CVD under the situation of CVD, electric field is concentrated on the marginal portion of periphery (or periphery) of substrate.Because this can cause the supernormal growth of film, film at the thickness on the peripheral part than on middle body, increasing greatlyyer.Using O ₃, TEOS etc. the situation of hot CVD under because the electricity of reactant gas is led difference between the peripheral part of substrate and middle body, the character of the film on the peripheral part of substrate become with middle body on different.This means: the thickness of film on the periphery of substrate is also more than increasing on middle body.

In the manufacture process of semiconductor wafer, the fluorocarbon that deposits during anisotropic etching also flow to the back side of wafer from the outer face ring, and is deposited on the there.Therefore, unwanted organic substance invests the peripheral part at the back side (rear surface) of wafer.

Transportation is contained in during the substrate in the transport case during by transportation conveyer transportation substrate or under the sort of condition, and this film on the peripheral part of substrate breaks easily.This is easy to generate dust, thereby particle is sticked on the wafer, and has reduced output.

Traditionally, for example handle, by with O by dry ashing ₂Plasma is delivered near the back side of wafer from the front ring, is removed to the film that near the fluorocarbon the back side of wafer forms by circulation during the anisotropic etching.Yet under the situation of low-k (low-k) film, it can be damaged when standing the dry ashing processing.For fear of damage, carried out some and utilized low power output to handle the trial of film.Yet, be difficult to remove fully the fluorocarbons that is deposited on the chip back surface, and can produce particulate in the substrate transportation or under other similar condition.This becomes the low main cause of output.

Being used for the prior art document of technology of the peripheral part of process semiconductor wafers as instruction, for example, below is known.

Patent documentation 1: Japanese patent application is not examined open No.H05-82478 and disclosed: the middle body of semiconductor wafer is coated with a pair of upper and lower retainer, and makes that the peripheral part of wafer is outstanding, so that plasma can be ejected into the ledge of wafer.Yet,, have the possibility that produces particulate because this technology is advocated the O type ring physics contact wafer with retainer.

Patent documentation 2: Japanese patent application is not examined open No.H08-279494 and disclosed: the middle body of substrate is placed on the platform, and plasma is ejected on the peripheral part from the top.

Patent documentation 3: Japanese patent application is not examined open No.H10-189515 and disclosed: plasma is ejected into the peripheral part of substrate from the below.

Patent documentation 4: Japanese patent application is not examined open No.2003-264168 and disclosed: wafer is placed on the platform, and be adsorbed hold with the rotation; And then, by the gas supply nozzle, the reactant gas of being made up of ozone and hydrofluoric acid (or active gases) is by on the front of the vertical peripheral part that is injected in wafer, utilizes heater in the periphery that embeds platform from the periphery of its opposition side with the mode heated chip of contact simultaneously.

Patent documentation 5: Japanese patent application is not examined open No.2004-96086 and disclosed: the peripheral part of wafer is inserted into the inside of C type parts, and oxide-base (oxide radical) is ejected on the peripheral part of wafer from the top of C type components interior, utilize the peripheral part of infrared lamp irradiation ground heated chip simultaneously, and the peripheral part of wafer is attracted by the suction ports that forms on C type components interior the most inboard.

Usually, in order to indicate, be formed on the peripheral part of wafer such as the cutting part of directional plane, recess etc. with respect to the crystal orientation of platform and the purpose of location.In order to remove the unwanted film at the edge that invests cutting part, need the action of the profile of coupling cutting part.

At patent documentation 6: Japanese patent application is not examined in the disclosed technology of open No.H05-144725, the nozzle that is used for directional plane is provided with discretely with the main burner of the circular portion that is used to handle wafer, and the nozzle that is used for directional plane moves along the directional plane partial linear, thereby handles the directional plane part.

Patent documentation 7: Japanese patent application is not examined open No.2003-188234 and is disclosed: in order to carry out the aligning of wafer, the periphery of a plurality of pins from two different angles in abutting connection with wafer.

At patent documentation 8: Japanese patent application is not examined open No.2003-152051 and patent documentation 9: Japanese patent application is not examined among the open No.2004-47654, use optical pickocff, survey the eccentricity of wafer in discontiguous mode, and based on this result of detection, correct by manipulator, then, wafer is set on the treatment bench.

[patent documentation 1] Japanese patent application is not examined open No.H05-82478

[patent documentation 2] Japanese patent application is not examined open No.H08-279494

[patent documentation 3] Japanese patent application is not examined open No.H10-189515

[patent documentation 4] Japanese patent application is not examined open No.2003-264168

[patent documentation 5] Japanese patent application is not examined open No.2004-96086

[patent documentation 6] Japanese patent application is not examined open No.H05-144725

[patent documentation 7] Japanese patent application is not examined open No.2003-188234

[patent documentation 8] Japanese patent application is not examined open No.2003-152051

[patent documentation 9] Japanese patent application is not examined open No.2004-47654

Summary of the invention

[the present invention is with the problem that solves]

The objective of the invention is to improve the efficient that does not need material that removes on the peripheral part of the substrate of for example wafer, crystal liquid substrate etc., and prevent that particle etc. from adhering on the described substrate.

[means of dealing with problems]

According to the present invention, when when the side with described substrate quadrature looks up, reactant gas sprays from the impact point of injection nozzle towards the peripheral part of described substrate along the roughly circumferencial direction at described impact point place.When from described orthogonal direction, the gas of the processing of close described impact point is sucked nozzle and is inhaled into along identical with the described direction that ejects substantially direction.

For remove to use effectively that reactant gas (or active gases) such as ozone deposits during etching under the normal pressure such as the organic membrane of photoresist and low-k (low-k) film with such as the organic substance of fluorocarbon, need heat.For example, shown in Figure 108, photoresist as the removed situation of unwanted organic membrane under, reaction be difficult to take place, and arrives about 100 degrees centigrade level up to temperature, and etching speed rises at about 150 degrees centigrade level place.At the level place that surpasses 200 degrees centigrade, etching speed almost increases with respect to temperature linearity.Yet if entire wafer is exposed to high temperature atmosphere, the quality of wiring, dielectric film etc. can change (characteristic variations that copper oxidation and low-k for example, occur).This can influence apparatus characteristic negatively, and is tending towards damaging reliability.In above-mentioned patent documentation, heater abuts film will be by the peripheral part from its removal.Yet, exist heat to be transmitted to the worry that middle body and middle body also are heated to high temperature from the peripheral part of substrate.And, be under the situation of infrared lamp etc. at heater, exist infrared ray also to be irradiated to the middle body of substrate, thereby directly middle body is heated to the worry of high temperature.If flow into the high temperature middle body of substrate, there is the etched possibility of film of the middle body of not expecting such as the reactant gas of ozone.And, the worry that exists the film quality on the middle body of substrate to change.

Preferably proposed a kind of equipment, this equipment comprises:

(a) platform, described comprises stayed surface, described stayed surface is used to contact described substrate and with described base plate supports thereon;

(b) heater, described heater is used for the target location is applied heat, and described target location should be present on the peripheral part by the described substrate of described support;

(c) reactant gas (or active gases) feeder, described reactant gas feeder are used for the described reactant gas of the unwanted material of removal is supplied to described target location; With

(d) heat dump, described heat dump are arranged on the described platform and are configured to from described stayed surface heat absorption.(referring to Fig. 1 to 13 etc.).

And, a kind of method has preferably been proposed, this method may further comprise the steps: substrate is contacted, so that substrate is supported on the stayed surface with the stayed surface of platform; The peripheral part of heated substrates; The reactant gas that will be used to remove unwanted material supplies to heated peripheral part; And utilize the heat dump be arranged on the platform to a part that is positioned at peripheral part inside absorb heat (referring to Fig. 1 to 13 etc.).

More preferably, described method comprises: substrate is contacted, so that substrate is supported on the stayed surface with the stayed surface of platform; Utilize the peripheral part of hot light radiation ground localized heating substrate; Reactant gas is supplied to regional area; And utilize the heat dump that is arranged on the platform that a part that is positioned at peripheral part inside is absorbed heat.

Because above-mentioned layout can effectively be removed the unwanted film on the peripheral part that is coated in substrate.On the other hand, even be applied directly at heat is transmitted to the zone (middle body) of substrate peripheral part inside or heater from peripheral part heat under the situation in zone (middle body) of substrate peripheral part inside, heat also can be absorbed by heat dump.This makes and can prevent to change at the film of the location of substrate inside and the quality of wiring.And, even reactant gas flows into the peripheral part inside of substrate from outer circumferential side, also can inhibitory reaction.This makes the inner zone of peripheral part (or perimembranous) that can prevent substrate be damaged.

Preferably, the stayed surface of platform is slightly more small than substrate; And the target location that should be present on the substrate peripheral part is positioned at from the surface that stayed surface extends radially outwardly.

For example, heat dump is the cooler that is used for cooling bench.

As its particular instance, be formed in the platform as the cooling medium chamber of heat dump (or cryogen chamber, coolant room), and cooling medium chamber is connected (referring to Fig. 1,6,7 and 10, etc.) with the coolant drain passageway with the coolant supply passageway.By being sent into this cooling medium chamber, coolant (or cold-producing medium, cooling agent), can absorb heat from substrate so that coolant is filled therein, flow or circulation.By increasing the internal volume of cooling medium chamber, thermal capacity or heat absorption capacity can significantly increase.As coolant, for example make water, air, helium etc.By being compressed or some other means that are fit to, coolant can effectively be fed into cooling medium chamber.This makes coolant can flow into the every nook and cranny of cooling medium chamber equably, thereby improves heat absorption rate.Be noted that coolant can be supplied with lenitively, perhaps because can obtain endothermic character by occurring in the indoor free convection of coolant, the coolant that once is fed into cooling medium chamber can be kept intact, need not be by supply/discharging in addition.The coolant supply passageway and the coolant drain passageway that are connected to cooling medium chamber can be made up of shared path.

Also acceptable is: the coolant path that comprises pipe etc. be set in the dorsal part (surface of stayed surface opposite side) or the dorsal part place as described heat dump, and coolant is through this coolant path (referring to Fig. 8 and 9 etc.).

The coolant path can be formed by this way, and promptly the stayed surface side in the platform partly extends to the part (referring to Fig. 6 and 7 etc.) of stayed surface opposite side.Because this layout, heat absorption rate can get a greater increase.Also acceptable is: described chamber is formed on platform inside, described chamber is separated in the first Room part of stayed surface side with in the second Room part of the opposite side of the first Room part, the first Room part and the second Room part communicate with each other, and the first Room part constitutes the passage portion of the upstream side of coolant path; And the second Room part constitutes the passage portion (referring to Fig. 6 and 7 etc.) in the downstream of coolant path.

Described coolant path can be formed by this way, and promptly the peripheral part from platform extends to middle body (referring to Fig. 8 and 9 etc.).Because this layout,, can be absorbed reliably from the heat of the peripheral part conduction of substrate, and can protect the film that is coated on the middle body reliably near can being cooled off fully of substrate peripheral part near side.The coolant path for example is spiral form (referring to Fig. 8 etc.).In optional embodiment, the coolant path comprises a plurality of annular concentric paths and is used to interconnect the communication paths of annular channels (referring to Fig. 9 etc.).

Described heat dump can comprise Peltier (peltier) element, and Peltier element has heat absorbing side and is set in the platform, and described heat absorbing side is in the face of described stayed surface (referring to Figure 11 etc.).Described Peltier element preferably is arranged near the stayed surface.And described Peltier element can be provided with fan, fin etc. at dorsal part (heat radiation side), is used to improve thermal radiation.

Described heat dump can be set in the whole zone of platform (referring to Fig. 1 to 11 etc.).Because this layout can be from substantially whole stayed surface heat absorption.

Described heat dump can be set at the peripheral part place of platform at least and not be arranged on middle body (referring to Figure 13,21 and 23 etc.).

Described heat dump can only be arranged on the peripheral part of platform, and is not arranged on center side part (referring to Figure 13,21 and 23 etc.) and locates.

Because above-mentioned layout, heat can only be absorbed from surface-supported outer circumferential side, and heat can be absorbed from the outer circumferential side part of the substrate that is positioned at surface-supported outer circumferential side and remove reliably.On the other hand, can prevent that center side part from also being absorbed heat and cool off, thereby save heat sink.

As the device of fixing base, described is preferably equipped with the static or the vacuum that are used to adsorb substrate and holds (or chuck, sucker) mechanism (referring to Figure 18 to 23 etc.).Because this layout, substrate can securely contact with stayed surface, and can obtain absorption property reliably.Can also accept to use mechanical chuck (or holding) mechanism that falls into (drop-in) method.Yet under the situation of using mechanical chuck (or holding) mechanism, the film that is coated on the part of peripheral part of substrate contacts with mechanical chuck physics.Therefore, preferably, use electrostatic chuck (or holding) mechanism or vacuum chuck (or holding) mechanism as much as possible.The adsorption hole of vacuum catch mechanism or adsorption tank preferably are formed into as much as possible little.Because this layout, the contact area of substrate and platform can increase and can improve heat absorption efficiency.

Described catch mechanism preferably only is arranged on the peripheral part of platform, and is not arranged on center side part (referring to Figure 22 and 23 etc.).More preferably, in office, center side support portion, platform is provided with the recess (referring to Figure 22 and 23 etc.) that partly sink with respect to outer circumferential side.

Because above-mentioned layout, the contact area of substrate and platform can be reduced, and can reduce because the particle (or particulate) that absorption produces.Only be set under the situation that the outer circumferential side of platform partly locates at heat dump, the heat that is tending towards being transmitted to from peripheral part the inside part of wafer can be absorbed reliably, and, can prevent the middle body heating of wafer reliably because the peripheral part of platform contacts with wafer.

Described catch mechanism can be arranged on the whole zone of surface-supported cardinal principle of platform (referring to Figure 18 to 21 etc.).

Gas ingredients is according to removed unwanted material is selected.Being under the situation such as the organic membrane of fluorocarbon with removed unwanted material, preferably use the gas that comprises oxygen, more preferably use to comprise such as ozone and O ₂The gas of isoionic high response gas.Original state by them uses pure gas also can not accepted by the air of the normal oxygen of ozonisation and baseization (radicalized) with comprising.

Ozone (O ₃) be broken down into oxygen particle and oxygen atom (O ₂+ O), and produce (O ₃) and (O ₂+ O) thermal equilibrium state.The life-span of ozone is depended on temperature.In 25 degrees centigrade scope, ozone has the very long life-span, but near 50 degrees centigrade, the life-span of ozone is reduced half.

Be under the situation of inoranic membrane with removed unwanted material, O ₃Can add parfluorocarbon (PFC), with by plasma.And reactant gas can be the gas that contains such as the acid of hydrofluoric acid steam.

As the reactant gas supply source of reactant gas feeder (reactant gas react device), for example can use atmospheric plasma processing unit (referring to Fig. 1 and 24 to 27 etc.).At reactant gas is under the situation of ozone, can use ozone generator (referring to Figure 29 to 31, Figure 34 to 37, Figure 41 and 47 to 52 etc.).At reactant gas is under the situation of hydrofluoric acid steam, can use hydrofluoric acid vaporizer or hydrofluoric acid injector.

Described atmospheric plasma processing unit is used for forming glow discharge under the normal pressure (near the pressure the atmospheric pressure) between electrode usually, and will handle gas plasmaization (comprising baseization and ionization) to obtain reactant gas." normal pressure usually " that the present invention uses refers to from 1.013 * 10 ⁴To 50.633 * 10 ⁴The pressure limit of Pa.When the simplification of the pressure controlled convenience of considering device and structure, pressure limit is preferably from 1.333 * 10 ⁴To 10.664 * 10 ⁴Pa, and more preferably from 9.331 * 10 ⁴To 10.397 * 10 ⁴Pa.

Described reactant gas feeder preferably includes and is used to form the injection path that sprays path and forms parts, is used in the future the reactant gas of autoreaction gas supply source and directs into target location (referring to Figure 29 etc.).

Described reactant gas supply source can be arranged near the target location.Be useful selection equally, reactant gas supply source wide position is provided with, and reactant gas forms parts and is guided near the target location by spraying path.

Utilize and spray the path temperature-adjusting device, the temperature that described injection path forms parts can be conditioned (referring to Figure 34,25 and 37 etc.).Because this layout, the temperature that process is sprayed the reactant gas of path can be conditioned, and temperature can remain on suitable level.The level of activity that therefore, can keep reactant gas.Be used as at ozone under the situation of reactant gas, for example, gas is cooled to and is maintained at about 25 degrees centigrade level.By so doing, can prolong the life-span of oxygen base.Therefore, reactant gas can be reliably and unwanted substance reaction, and therefore can improve removal efficient.

For example, the device that is used to regulate the temperature of spraying path can be made of the adjustment path or the fan that are used to the adjustment medium is passed wherein.Also acceptable is: for example, spraying path formation parts is double tubular structure, and wherein reactant gas is flowed through as its internal path of spraying path; And the adjustment MEDIA FLOW is through its outside annular channels as the adjustment path.As the adjustment medium, can make water, air, helium, chlorofluorocarbon etc.

Also acceptable is: described injection path forms parts by along the heat dump cooling of platform (referring to Figure 36 etc.).Because this layout, can eliminate and use the needs that are exclusively used in the cooling device that sprays path, can simplified structure, and can realize the decline of cost.This be arranged in that for example reactant gas need be cooled off or ozone as useful especially under the situation of reactant gas.

Described reactant gas feeder preferably includes injection tip and forms parts (injection nozzle), is used to form the injection tip (referring to Figure 29 to 45 and 47 to 52 etc.) that ejects reactant gas.

Described injection tip preferably towards and near the target location (referring to Fig. 1,24 to 29 and 17 to 50 etc.) is set.

Also acceptable is: a plurality of injection paths are from single reactant gas supply source branch and be connected to a plurality of injection tips.

Described injection tip can have: point-like (mottled) structure (referring to Figure 47 to 50 etc.); Linear structure along the circumferential extension of platform; Or the loop configuration (referring to Figure 30 and 31 etc.) that whole periphery extends in the circumferential upper edge of platform.Also acceptable is: with respect to point source of light, the point-like injection tip is set; With respect to wire, the wire injection tip is set; And, the annular spray port is set with respect to annular light source.

A plurality of point-like injection tips and a plurality of wire injection tip can be along the circumferential arrangement of platform.

Described injection tip forms parts and can be provided with and rotate stream and form parts, is used for the reactant gas that rotates in a circumferential direction (referring to Figure 10 etc.) along injection tip.Because this layout, reactant gas can be sprayed onto the target location of substrate equably.

Described rotation stream forms parts and comprises a plurality of rotation guide holes, and described rotation guide hole extends along the tangential direction of injection tip usually, and is connected to the interior perimeter surface of injection tip, and circumferentially arranging at each interval along injection tip.Described rotating hole is preferably formed the passage portion (referring to Figure 10 etc.) of the upstream side of injection tip.

As unwanted material, organic membrane and inoranic membrane are laminated on the peripheral part of substrate (referring to Figure 78) sometimes.In a word, be different from kind with the gas of inoranic membrane reaction with the kind of the gas of organic membrane reaction, and their reactive mode is also different, comprises needs/need not to heat.For example, the organic membrane such as photoresist need heat to cause oxidation reaction and ashing as previously mentioned.On the contrary, such as SiO ₃Inoranic membrane can be at normal temperatures etched by chemical reaction.Therefore, preferably, first reactant gas such as oxygen radical reaction gas that reacts with organic membrane is used as reactant gas, and reactant gas feeder (the first reactant gas feeder) is used to remove organic membrane.Preferably, described equipment also comprises: the second reactant gas feeder is used for second reactant gas (for example, fluorine-based reactant gas) with the inoranic membrane reaction is supplied to the peripheral part (referring to Figure 79 and 80 etc.) that is placed on the substrate on the platform.Because this layout no longer needs to be exclusively used in chamber and the platform of removing inoranic membrane; The structure of described equipment can be simplified; No longer needing to handle the position from organic membrane handles the position or handles the position is handled in the position to organic membrane conveying from inoranic membrane to inoranic membrane; Therefore and can more effectively prevent the particle (or particulate) that causes by conveying, and can improve output.And, use different heads by type according to gas, can avoid the problem of cross pollution.

For example, described film is by the C such as photoresist and polymer _mH _nO ₁The organic substance of (wherein m, n and l are integers) expression is formed.First reactant gas with the reactivity (or active) of reacting with organic membrane preferably includes the gas of oxygen, and more preferably, is the oxygen-containing gas with high response such as oxygen base (or oxygen radical) and ozone.Comprise the pure gas and the according to the facts appearance use on border of air of normality gas.Use plasma discharge apparatus or ozone generator and with oxygen (O ₂) as source gas, can produce the described oxygen reactant gas that contains.By applying heat, the reactivity of the described organic membrane and first organic gas obtains increasing.

Be noted that containing the oxygen reactant gas is not suitable for removing inoranic membrane.

Described inoranic membrane for example comprises SiO ₂, SiN, p-Si, film having low dielectric constant etc.With second reactant gas of inoranic membrane reaction preferably such as the reactive fluorochemical gas of fluorine-based (F*).The use plasma discharge apparatus also will be such as PFC (for example, CF ₄And C ₂F ₆) and HFC (for example, fluoro-gas CHF3) can produce reactive fluorochemical gas as source gas.Described fluorine-containing reactant gas reacts with organic membrane hardly.

Usually, as mentioned above, inoranic membrane can be etched at normal temperatures.Yet, the inorganic substances that exist some to heat.A kind of example is SiC.

In the time will removing the inoranic membrane of the unwanted material of conduct that needs heating, the equipment that is used for the periphery of treatment substrate can be used similarly.

Reactant gas corresponding to SiC for example is CF ₄The equipment of the peripheral part that is used for treatment substrate with said structure (a) to (d) is also effective under following situation: at high temperature can etched first inoranic membrane (for example SiC) and second inoranic membrane (for example SiO2) that at high temperature its etching speed is lower than first inoranic membrane be laminated in substrate, and in first and second inoranic membranes only first inoranic membrane with etched.

Described heater is pharoid preferably, comprising: the light source of hot light; And irradiator, described irradiator is used for will being mapped to target location (referring to Fig. 1 etc.) from the hot illumination of light source with the ethod of remittance.Because this layout, substrate can heat in the noncontact mode.

Described heater is not limited to pharoid, can also be electric heater etc.

As under the situation of heater, laser, lamp etc. can be used as light source at pharoid.

Described light source can be point source of light, along the linear light source of the circumferential extension of platform or the annular light source that extends on whole surface in the circumferential upper edge of platform.

Under the situation of point source of light, a position on the peripheral part of substrate can be locally heated with dot pattern.

Usually, lasing light emitter is a point source of light, and light collection performance is fine.It is suitable for converging irradiation, and can energy be applied to unwanted material in the target location with high density.Therefore, the unwanted material in the target location can instantaneously be heated to high temperature.Handling width can also be easily controlled.The type of laser can be the laser of LD (semiconductor) laser, YAG laser, (being excited) excimer laser or any other type.The LD Wavelength of Laser is that 808nm is to 940nm; The YAG Wavelength of Laser is 1064nm; And the wavelength of (being excited) excimer laser is that 157nm is to 351nm.The preferably about 10W/mm of output density ²Or it is more.Oscillation form can be CW (continuous wave) or impulse wave.Preferably, oscillation form is can be by switching the processed continuously type of high frequency.

Also acceptable is: the output wavelength that forms light source according to the absorbing wavelength of unwanted material.By so doing, energy can be applied to unwanted material effectively, and can improve the efficiency of heating surface.The light emission wavelength of described light source can be corresponding with the absorbing wavelength of unwanted material, or only extract absorbing wavelength by the wavelength extraction element such as band pass filter etc.Incidentally, the absorbing wavelength of photoresist is that 1500nm is to 2000nm.

Also acceptable is: utilize convex lens, cylindrical lens etc., will convert to from the point-like light of point source of light along the Line of light of the peripheral part transmission of substrate, and illuminated then.

At light source is under the situation of Line of light, and the peripheral expanded range of the peripheral part of substrate can be by local and linear heating.

At light source is under the situation of ring light, and the whole peripheral part of substrate can be by local and annular heating.A plurality of point source of lights and a plurality of linear light source can be along the circumferential arrangement of platform.

As lamp source, for example can enumerate near infrared lamp such as Halogen lamp LED, and far infrared lamp.The light emission form of lamp source is the continuous light emission.For example, the light emission wavelength of infrared lamp is that 760nm is to 10000nm; And 760nm belongs to near-infrared band to the wavelength of 2000nm.The wavelength extraction element of utilization such as band pass filter, the wavelength that mates with the absorbing wavelength of unwanted material preferably extracts from aforementioned wavelength region may, and illuminated then.

Preferably, by such as the pharoid of cooler and fan/cooling device cooling pharoid (especially lamp source type) (referring to Figure 30 etc.).

Described pharoid can comprise such as the optical transmission system such as waveguide that extends to the target location from light source (referring to Fig. 1 etc.).Because this layout, can be sent to reliably from the hot light of light source substrate peripheral part near.As waveguide, preferably use optical fiber.By using optical fiber, can easily distribute.Preferably many optical fiber are tied.

Also acceptable is: described waveguide comprises many optical fiber; And those optical fiber are branched and extend from light source, so that (referring to Figure 39 etc.) arranged in the tip along the circumferential compartment of terrain of platform.Because this layout, what hot light can be along the peripheral part of substrate circumferentially shines a plurality of places simultaneously.

Preferably, the tip such as the waveguide of optical fiber is connected (referring to Fig. 1 etc.) with comprising the irradiator optics that converges optics.

Preferably, the irradiator of pharoid comprises and converges optical system (coacervating part) that the described optical system that converges comprises paraboloidal reflector; Convex lens; Cylindrical lens etc., and be suitable for the hot light from light source is converged to the target location.The described optical system that converges can be in paraboloidal reflector, convex lens, the cylindrical lens etc. any one, or their combination.

Described irradiator is preferably equipped with focal adjustments mechanism.Described focus can be consistent definitely with the target location, or the position that slightly departs from objectives.Because this layout, can be regulated suitably being applied to the density of irradiation energy of peripheral part of substrate and the size of irradiation area (cohesion diameter, spot diameter).

Described focal adjustments mechanism can use as follows.

For example, when form in the periphery at substrate such as the cutting part of recess or directional plane when processed, compare the direction of the focus deflection optical axis of pharoid with all peripheries that only do not comprise the substrate that removes cutting part when processed.Because this layout, compare when processed with all peripheries that only do not comprise recess or directional plane, can increase the irradiating width (optical diameter) on the substrate; Hot light also can hit the edge of recess or directional plane; And therefore, can remove film (referring to Figure 14 etc.) on the edge that is coated in recess or directional plane.

Utilize focal adjustments mechanism, by the focus of regulating pharoid towards the direction of optical axis, the irradiating width on the periphery of substrate can be conditioned, thereby and also can remove and handle width (with the width of removed unwanted film) (referring to Figure 16 etc.).

Regulate pharoid subtly by direction of illumination, also can regulate and handle width (referring to Figure 17 etc.) along substrate.Under the sort of situation, preferably, no matter when substrate carries out a rotation, pharoid slides subtly along the radial direction of substrate and is generally equal to a part of the irradiating width of pharoid on substrate.Preferably, be radiated at substrate periphery, interior all sides place of processed scope is at first carried out, and then, little by little radially outwards slide subtly.

Also acceptable is: be used for and will be set at rear side and neighbouring (referring to Figure 28 etc.) of target location to the reflection part of target location from the hot light total reflection of light source.Because this layout, light source can be disposed in surface-supported extensional surface near, or be arranged on therefrom position to reach.

The equipment that is used for the peripheral part of treatment substrate can comprise:

(a) platform, described comprises stayed surface, described support substrate, so that the peripheral part of substrate is outwards outstanding,

(b) pharoid, described pharoid comprises: light source, described light source wide position is provided with, and described target location should be present on the peripheral part at the back side that is supported on the substrate on the platform; And optical system, described optical system is used for will being mapped to the target location from the hot illumination of light source in the not dispersed mode of hot light; With

(c) comprise the reactant gas feeder of injection tip, described injection tip is connected to the reactant gas supply source that is used for supply response gas and is used to eject the reactant gas that is used to remove unwanted material, described injection tip is set at the dorsal part of stayed surface or its extensional surface, or be set near common target location (referring to Fig. 1,24 to 30,34 to 39 and 41 to 44 etc.) on extensional surface.

Also acceptable is: substrate is supported on the platform, thereby the peripheral part of substrate is outwards outstanding, hot light from pharoid is illuminated, so that focus on the peripheral part at the back side of substrate, or peripheral part near, so that substrate is locally heated, the injection tip of reactant gas feeder be placed on be locally heated the part near, so that injection tip points to this part, and by eject the reactant gas that is used to remove unwanted material through injection tip, the unwanted material that is coated on the peripheral part at the back side of substrate can be removed.

Because above-mentioned layout, by hot light being applied to partly the peripheral part of substrate back, substrate can be locally heated, and reactant gas can be from being directed onto the part that is locally heated near it.This makes can remove the unwanted material that is coated on the specific part effectively.

Preferably, the stayed surface of platform is a little littler than substrate, and should be present in target location on the peripheral part of substrate and be positioned on the extensional surface that extends radially outwardly from stayed surface.

Also acceptable is: irradiator is set at the dorsal part (or back side) of extensional surface and locates, and injection tip is set at the dorsal part of extensional surface, perhaps is arranged on usually (referring to Fig. 1 etc.) on the extensional surface.

Because above-mentioned layout, by hot light being applied to partly the peripheral part of substrate back, substrate can be locally heated, and reactant gas can be from being directed onto the part that this is locally heated near it.By so doing, can remove the unwanted film that is coated on this specific part effectively.

Described injection tip preferably is set to compare more near the target location with the distance irradiator.Because this layout, reactant gas can supply to the target location reliably under non-dispersive, high density and highly active condition; And can improve the clearance of unwanted material effectively reliably.Preferably, irradiator is arranged to than injection tip further from the target location.This makes can arrange easily that irradiator and injection tip form parts.

Preferably, with respect to the target location, the irradiator of pharoid and injection tip are arranged (referring to Fig. 1 etc.) along different directions from each other.This makes can arrange more easily that pharoid and injection tip form parts.

Preferably, in the irradiator of pharoid and the injection tip is disposed in usually through (referring to Fig. 1 etc.) on target location and the straight line perpendicular to extensional surface.Be usually placed on the vertical line by the irradiator with pharoid, the efficiency of heating surface can be improved; And by injection tip is usually placed on the vertical line, reaction efficiency can be improved.

Preferably, the injection tip formation parts (injection nozzle) that form the injection tip of reactant gas feeder are made up of light transmissive material.Because this layout is disturbed even the light path of pharoid and injection tip form parts, after transmission formed parts through injection tip, light can be irradiated to the target location of substrate reliably, and this specific part can access heating reliably.Therefore, injection tip forms parts can be arranged in very position near the target part reliably, and can not be subjected to the light path restriction of pharoid, and reactant gas can be sprayed onto on the specific part reliably from described very approaching position.As light transmissive material, for example preferably use transparent resin such as quartz, acryl, transparent teflon (registered trade mark) and transparent vinyl chloride.If the transparent resin with low thermal resistance is used as light transmissive material, preferably regulate the output of radiant heat etc., so that transparent resin will can not be out of shape or fuse.

Also acceptable is: be used for the housing department of sealing (or surround) target location, and the injection tip that is used for reactant gas is disposed in housing department inside.And also acceptable is: the irradiator of pharoid is disposed in the housing department outside, and forms (referring to Figure 38 and 61 to 77 etc.) by light transmissive material in the face of at least a portion housing department of irradiator side.Because this layout can prevent reliably that the reactant gas of handling from leaking into the outside, and can transmit through housing department from the hot light of pharoid, thereby realize the target part of radiation heating substrate reliably.

Irradiator and injection tip are preferably relatively moved.

Preferably, platform is circular platform, and this circular platform relatively rotates around central shaft with respect to light source and injection tip.Because this layout,, also can handle along the removal of the unwanted material of circumferential execution of the peripheral part of substrate back even be under the situation of point source of light at luminous point.Even at light source is under the situation of ring-type light source,, can improve the uniformity of processing by carrying out above-mentioned relative rotation.Be heated the temperature at place according to the peripheral part of substrate back, rotate number (relative moving speed) relatively and be provided with suitably.

Desirably use framework, be used for along circumferentially surrounding platform, thereby surround the target location, and between platform and framework, form annular space (referring to Fig. 1 and 2 etc.).Because this layout, the reactant gas of handling can temporarily be retained near the target location, thereby gas can not be diffused into the outside, and can obtain the sufficient reaction time.Preferably, light source and injection tip are accommodated in the annular space or face this annular space, and fixed-site is to framework.

Described evaluation method selecting optimal equipment ground also comprises rotary drive mechanism, is used for respect to framework around central shaft rotating platform relatively.

Acceptable is: described framework is to fix, and simultaneously platform is rotated, or platform is fixed, and framework is rotated simultaneously.

Preferably, described equipment also comprises labyrinth seal, is used to seal between the back portion on the opposition side of stayed surface side (front side) of platform, realizes the relative rotation (referring to Fig. 1 etc.) of platform simultaneously.Because this layout, platform or framework can not have any rotation intrusively, and the gas of handling can be prevented from leaking into the outside between the rear side of platform and framework.

Preferably, the part of described framework on its front side is provided with cover, described cover extends towards platform, and the front side of overlapping target location, thus cover separately or be placed on platform on the peripheral part of the substrate covering annular space (referring to Figure 24 to 30 etc.) of cooperate.Because this layout, the gas of handling can be prevented from leaking into the front side from annular space.

Described cover preferably can be recalled (referring to Figure 29 etc.) from the position that its applies annular space.Because this layout, when substrate will be placed on the platform and when platform is removed, by recalling cover, cover will can not disturb the operation that substrate is placed on the platform and substrate is removed from platform.

Described annular space preferably is connected (referring to Fig. 1 and 24 to 27 etc.) with the annular space aspirator that is used to aspirate annular space.Because this layout, the reactant gas of handling can be aspirated and be discharged from annular space.

Described equipment also preferably includes and is used to aspirate near the aspirator (referring to Fig. 3) of injection tip.Because this layout, the gas of handling can and be discharged by suction around the target part.

Preferably, described is provided with the stage portion (referring to Figure 37 etc.) of cooperating with the peripheral part of substrate and forming gas reservoir at its surface-supported peripheral part place.Because this layout, the reactant gas that ejects from injection tip can temporarily be kept at the gas reservoir, so that can increase the time of the peripheral part of reactant gas contact substrate.Therefore, can obtain enough reaction time and can improve reaction efficiency.

Preferably, the inert gas injecting-unit that is used to eject inert gas is set at the dead ahead (referring to Figure 34 to 37 etc.) of surface-supported middle body.Because this layout can prevent that reactant gas from not flowing to the front of substrate, and can prevent reliably that the film on the front side is impaired.Described inert gas injecting-unit can be nozzle or fan filter unit.Certainly, this inert gas injecting-unit is set to upwards leave the part that is equal to or greater than substrate thickness at least from stayed surface.When being used to place/remove the operation of substrate in execution, the inert gas injecting-unit is withdrawn, so that can perturbation operation.As inert gas, can use pure nitrogen gas, cleaning dryness air (CDA) etc.

As preceding mentioning, under the situation of organic membrane quilt, uprise along with carrying out etched temperature such as the oxygen radical reaction gas etch of ozone such as fluorocarbon, etching speed can be increased.As heater, because can more effectively prevent particle, the radiant heat that is caused by laser than the heater that accompanies by the physics contact etc. more preferably.

On the other hand, such as the radiant light of laser from directly over or under shine under the situation on the peripheral part of wafer, make light to tilt or parallel mode incides the inclined surface part or the vertical component at the end edge place of wafer.Therefore, be difficult to obtain sufficient heat rate, and etching speed is tending towards being reduced.

Also acceptable is: substrate is supported on the platform, and in the direction that radially outward has a down dip from substrate when the peripheral part of substrate shines hot light, by peripheral part is contacted with reactant gas, the unwanted material that is coated on the peripheral part of substrate is removed (referring to Figure 30,53,56 and 57 etc.).

Because above-mentioned layout, inclined surface and vertical outer face with respect to the peripheral part of substrate, the direction of illumination that can make hot light is near vertical, density by abundant increase emittance can increase the efficiency of heating surface fully, and therefore, can increase the etching speed that is used to remove the film on the periphery that is formed on substrate.

Described downdip direction not only comprises the incline direction (referring to Figure 30,53 and 57 etc.) with respect to substrate, and comprises positive side direction (parallel with substrate) (referring to Figure 56 etc.).

Also acceptable is: substrate is supported by platform; Reactant gas is supplied with to the peripheral part of substrate, shines hot light simultaneously; And by move the direction of illumination of hot light in perpendicular to the plane of substrate (its first type surface) around the peripheral part of substrate, the unwanted material that is coated on the peripheral part of substrate contacts and is removed (referring to Figure 59 and 60 etc.) with reactant gas.

Because above-mentioned layout, hot light can vertically be shone the various piece of front side, outer face and rear side such as substrate usually, thereby and each part can be handled effectively.

Preferably, the plane that moves through of hot light is the plane of passing the single radius of substrate.

The equipment that is used for the peripheral part of treatment substrate further comprises:

(a) be used for the platform of supporting substrate,

(b) reactant gas feeder, described reactant gas feeder is suitable for reactant gas is supplied to the target location, and described target location should be present on the peripheral part that is placed on the substrate on the platform; With

(c) irradiator, described irradiator are used for hot light is shone to target location (referring to Figure 30,53,56 and 57 etc.) from the surface-supported direction that radially outward has a down dip.

Because above-mentioned layout, with respect to the inclined surface and the outer face of the peripheral part of substrate, the angle of radiation by making hot light can make incidence angle near zero degree near vertical; By the density of abundant increase emittance, can increase the efficiency of heating surface fully; And therefore, can increase the etching speed that is used to remove the film on the periphery that is coated in substrate.

The equipment that is used for the peripheral part of treatment substrate can comprise:

(a) platform, described comprises the stayed surface that is used for supporting substrate;

(b) reactant gas feeder, described reactant gas feeder is suitable for reactant gas is supplied to the target location, and described target location should be present on the peripheral part that is placed on the substrate on the platform;

(c) irradiator, be used for hot illumination to the target location and

(d) travel mechanism is used at the mobile irradiator in plane perpendicular to stayed surface (thus perpendicular to the substrate on the stayed surface), simultaneously with irradiator definite object position (referring to Figure 59 and 60 etc.).

Because above-mentioned layout, hot light can vertically be shone the various piece such as front side, outer face and the rear side of the peripheral part of substrate usually, thereby and each part can be handled effectively.

Preferably pass the plane at stayed surface center perpendicular to surface-supported plane.

Acceptable is: the supply nozzle of reactant gas feeder and discharge nozzle are movably, or can carry out angular adjustment with irradiator.Also acceptable is: no matter irradiator how move the fixed-site of supply nozzle and discharge nozzle.

Preferably, direction of illumination is usually along the normal of locating at the point that will shine (center of the part that will shine) of substrate peripheral part (referring to Figure 54 etc.).

Because above-mentioned layout, incidence angle can be generally zero at above-mentioned some place, can increase the density of irradiation energy reliably, and can improve the efficiency of heating surface reliably.

Under the injection nozzle of the reactant gas feeder of the equipment of the peripheral part that the is used for treatment substrate situation for the elongated straw shape structure that has unified diameter from its cardinal extremity to its far-end, can expect: reactant gas hits substrate easily and is disperseed.Then, the reaction time of spike reduces, and the utilization rate and the reaction efficiency of spike reduce, and required reactant gas amount increases.

Consider above-mentioned situation, also acceptable is: the reactant gas feeder of equipment that is used for the peripheral part of treatment substrate comprises:

Guidance part, the reactant gas that is used for removing unwanted material directs near the target location; With

Be connected to guidance part and cover tube portion on the target location,

The inside of tube portion is expanded than guidance part widelyer, and is defined for temporary transient (or interim) memory space (referring to Figure 60 to 66 and 70 to 77 etc.) of temporarily preserving reactant gas therein.

Because above-mentioned layout can improve the service efficiency and the reaction efficiency of reactant gas, and can reduce required tolerance.

Preferably, the release port that is connected to temporary transient memory space is formed in the portion itself, or is formed between the outward flange of the substrate on a portion and the target location; And reactant gas is encouraged to flow out temporary transient memory space by release port.

Because above-mentioned layout, it is longer that the gas of the processing that reactivity reduces and reaction by-product can rest on temporary transient memory space, and new reactant gas can supply to temporary transient memory space every now and then, and reaction efficiency can access raising reliably.

For example, the tip of tube portion is in the face of target location opening (referring to Figure 66 and 71 etc.).

Under the sort of situation, the cutting part that is used as release port preferably is formed on the correspondence position (referring to Figure 70 and 71 etc.) that radially is positioned at the substrate outside in the remote edge of tube portion.

Because above-mentioned layout, gas of handling and reaction by-product can flow out temporary transient memory space fast through cutting part, and new reactant gas can supply to temporary transient memory space every now and then, and reaction efficiency can access raising reliably.

Also acceptable is: tube portion is set to pass the target location; Be used for making the peripheral part of substrate to insert wherein cutting part and be formed on peripheral part corresponding to the target location of substrate; And guidance part is connected to the tube portion (referring to Figure 74 to 77 etc.) of the base end side that is positioned at cutting part.

In above-mentioned layout, the inside of the tube portion of the base end side of cutting part constitutes temporary transient memory space, by cooperating with the outward flange of wafer in the target location, corresponding to the target location of tube portion, the interior perimeter surface of the part that stays of cutting constitutes release port.

The tube portion of the distal side of cutting part preferably directly is connected (referring to Figure 74 and 75 etc.) with drain passageway.

Because above-mentioned layout, gas of handling and reaction by-product can be directed into drain passageway reliably; If any, particle can be forced to discharge reliably; And can easily control reaction.

Preferably, the base end part of tube portion is provided with the printing opacity closure that is used to seal base end part; And hot light illuminator is set at the outside of housing department, so that definite object position (referring to Figure 70 and 77 etc.).

Because above-mentioned layout is carried out under the situation of the endothermic reaction intensified response reliably at unwanted film and reactant gas.

As mentioned above, because the peripheral part that heat dump just is positioned at such as the substrate of wafer is effectively, the diameter of platform is made than a little little such as the diameter of substrate, so that only the peripheral part of substrate radially is projected into the platform outside.

On the other hand, substrate is being placed on the platform and is making when platform is removed substrate, the front of substrate preferably is not touched.For this purpose, preferably use forked arm, and make described arm also raised near the lower surface (back side) of substrate.Yet, under the situation that only fraction of the peripheral part of substrate is given prominence to from platform, have the space that fork nestles up the lower surface of substrate hardly.

Therefore, platform portion in the central is provided preferably with the central pad that diameter reduces, thereby central pad can move up and down (referring to Figure 86 to 87 etc.).Utilization is from the central pad of platform projection, and substrate is placed on the central pad by forked robots arm (manipulator), and forked robots arm recalls.When under the sort of situation, central pad is concordant with it or from its reduction, substrate can be placed on the platform.After processing finished, central pad was risen, and forked robots arm is inserted between substrate and the platform.Then, wafer is risen by forked robots arm, and transports out.

In having the platform of central pad, the reciprocating mechanism that is used for central pad is disposed in central axis.Central pad is provided preferably with the function that is used to adsorb substrate.Under the sort of situation, the suction flow passage of drawing from central pad is disposed on the central axis.Under the situation that in processing, does not need to cool off, there is the example that easily central pad directly is used as platform.In the sort of example, the rotating mechanism of central pad also can be connected to central axis.

State in the use under the situation of layout, make the suction flow passage of platform absorption substrate be difficult to be set on the central axis, and they are forced to be provided with in the mode from eccentricity of central axis with the cooled flow path of guiding cooling chamber into.On the other hand, because platform rotates around central shaft, platform and eccentric flow passage are interconnected becomes problem.

Therefore, acceptable is: described equipment comprises platform, and described comprises and be used for realizing on such as the substrate of wafer required operation (adjustment (comprising cooling), absorption etc.) and the flow passage that can rotate around the center pillow block,

Described comprises: the platform main body, and described main body is provided with: substrate is placed installation surface thereon; Terminal (being used to carry out part) with flow passage such as the required action of adjustment and absorption; Be provided with the stationary magazine creel of the port that is used for flow passage; Rotatably pass the rotating cylinder that stationary magazine creel also is connected to the platform main body coaxially; With the rotating driver that is suitable for rotating rotating cylinder,

The annular channels that is connected to port is formed in the surface, outside of the interior perimeter surface of stationary magazine creel or rotating cylinder;

In axial direction the axial passageway of Yan Shening is formed in the rotating cylinder; With

An end of described axial passageway is connected to annular channels; And the other end is connected to described terminal (referring to Figure 87 etc.).

Because above-mentioned layout, platform can be rotated, and fluid is flowed, and is used in the position of departing from the platform center carry out the action required such as adjustment and absorption such as the substrate of wafer; And be used to arrange that the space such as other building block of the advancing of central pad/evacuating mechanism can obtain on central axis.

For example, described terminal is chamber or the path that is used for cooling base.Chamber or path as terminal are formed on the platform body interior.The cooling fluid that is used for cooling base passes flow passage.

Because above-mentioned layout, substrate can access cooling as required action.

Under the sort of situation, platform comprises

Platform main body, described main body have cooling medium chamber or the coolant path that is formed on wherein as heat dump,

Be provided with the stationary magazine creel of the port that is used for coolant;

Rotatably pass the rotating cylinder that stationary magazine creel also is connected to the platform main body coaxially; With

Be suitable for rotating the rotating driver of rotating cylinder,

Annular channels, described annular channels are connected to the port in the surface, outside of the interior perimeter surface that is formed on stationary magazine creel or rotating cylinder;

In axial direction extend and be formed on axial passageway in the rotating cylinder, an end of described axial passageway is connected to annular channels, and the other end is connected to cooling medium chamber or coolant path (referring to Figure 87 etc.).

In the cooled flow access structure, preferably, two annular seal grooves are formed in the interior perimeter surface of stationary magazine creel or in the surface, outside of rotating cylinder, so that seal groove is positioned at the both sides of annular channels; With

Each seal groove holds the packing ring (referring to Figure 88 etc.) that has П shape structure towards annular channels opening and cross section therein.

Cooling fluid by stationary magazine creel interior perimeter surface and the gap between the surface, outside of rotating cylinder enter under the situation of annular seal groove, dispersal direction along the opening of packing ring, fluid pressure (normal pressure) acts on the packing ring with П tee section, and packing ring can be pushed against on the interior perimeter surface of annular seal groove.Therefore, sealing load can be obtained reliably, and the cooling fluid leakage can be prevented reliably.

Acceptable is: described terminal is formed in the adsorption tank in the installation surface, and described port is by vacuum suction (referring to Figure 87 etc.).

Because this layout, the energy of adsorption of substrate accesses execution as required action.

In above-mentioned absorption flow passage structure, preferably, two annular seal grooves are formed in the interior perimeter surface of stationary magazine creel or in the surface, outside of rotating cylinder, so that seal groove is positioned at the both sides of annular channels; With

Each seal groove holds the packing ring (referring to Figure 88 etc.) that has П shape structure with respect to annular channels towards opposite side opening and cross section therein.

Because above-mentioned layout, gap between the surface, outside of the interior perimeter surface of passing through stationary magazine creel and rotating cylinder, under the situation of the negative pressure that realizes the absorption flow passage on the annular seal groove, this negative pressure act on the cross section be П shape packing ring the rear portion and attempt to expand packing ring, and therefore, packing ring is pushed against on the interior perimeter surface of annular seal groove, so that can prevent leakage reliably.

Preferably, the pad axle that is connected to central pad is accommodated in the rotating cylinder.Described central pad is preferably by filling up axle forward/backward in axial direction.Also acceptable is: central pad is by the rotation of pad axle.Preferably, the pad reciprocating device of pad axle and forward/backward central pad is integral with a part or the integral body of the pad rotating mechanism that is used to rotate central pad.The adsorption tank that is used for adsorbing substrate also is formed on central pad, and the pad axle is provided with the suction path of the adsorption tank that is connected to central pad.

Also acceptable is: from the injection nozzle of the reactant gas that is used to remove unwanted material to such as the injection direction of the peripheral part of the substrate of wafer usually along circumferential (in the tangential direction of target location) of substrate directed (referring to Figure 41 to 45 etc.).

Also acceptable is: the peripheral part of substrate with the annular surface that is positioned near, the injection direction of injection nozzle of reactant gas feeder of equipment of peripheral part that is used to handle wafer is usually along circumferential (tangential direction of target location) of annular surface directed (referring to Figure 41 etc.).

Because above-mentioned layout, reactant gas can flow along the periphery of substrate, and the time of the periphery of reactant gas contact substrate can access increase, and can improve reaction efficiency.

Under the situation that the unwanted material that is coated on the back side of wafer is mainly removed, injection nozzle preferably is disposed in the rear side (therefore, being disposed in the rear side of wafer) (referring to Figure 42 etc.) of annular surface.Also preferably, the distal portion of injection nozzle (injection axis) in annular surface, radially tilt (referring to Figure 45 (b) etc.).Because this layout can prevent that reactant gas from forwarding the front of substrate to, and can prevent that the front side is impaired.

Preferably, the distal portion of injection nozzle (injection axis) from the front side of annular surface or rear side to annular surface tilt (referring to Figure 42 and 44 etc.).Because this layout, reactant gas can hit substrate reliably.

Certainly, also acceptable is: the distal component of injection nozzle (injection axis) is just along circumferential (tangential direction) orientation of substrate.

Preferably, except injection nozzle, described equipment comprises the suction nozzle (discharge nozzle) (referring to Figure 41 etc.) that is used for the gas that suction process crosses.Described suction nozzle is connected with suction discharging device such as vacuum pump.

Described suction nozzle preferably is arranged as relative with injection nozzle, and the target location is sandwiched between them (referring to Figure 41 etc.).

Described suction nozzle is preferably usually along circumferentially being arranged to of annular surface relative with injection nozzle (referring to Figure 41 etc.).

Because above-mentioned layout, the flow direction of reactant gas can be controlled to reliably along substrate circumferentially, and the part that need not to handle can be prevented from being subjected to the negative effect of reactant gas reliably.Then, reactant gas tangentially ejects usually and reacts from injection nozzle.After the reaction, directly make the gas of handling (comprising reaction by-product) mobile point-blank usually along the tangential direction of substrate such as particle.Then, the gas of described processing can be sucked nozzle suction so that be discharged from.Therefore, can prevent that particle from piling up on the substrate.

Be set at injection nozzle under the situation of rear side of annular surface, suction nozzle also is disposed in rear side.Under the sort of situation, the distal portion of suction nozzle (suction axle) is preferably to annular surface tilt (referring to Figure 42 etc.).Because this layout can be aspirated the reactant gas that flows along substrate reliably.

Also acceptable is: the distal component of suction nozzle (suction axle) is along circumferential (tangential direction) linear directional, so that it is aimed at the distal portion (injection axis) of injection nozzle.

Also acceptable is: the outer radial that the suction axle of the distal portion of suction nozzle will be arranged annular surface thereon from the periphery of substrate usually is to interior orientation, so that suction axle vertical with the injection axis of the distal portion of injection nozzle usually (referring to Figure 49 etc.).

Because above-mentioned layout, reactant gas is by injection nozzle ejection and reaction.After the reaction, can make the gas (comprising reaction by-product) handled fast radially outward, to be sucked/to discharge such as particle.Therefore, can prevent that particle from piling up on the substrate.

Also acceptable is: the suction axle of the distal portion of suction nozzle is arranged to the periphery of pointing to substrate will be arranged thereon annular surface, and suction axle is disposed in the opposition side of a side that is positioned at the distal portion of arranging injection nozzle, and annular surface is sandwiched between the distal portion of suction axle and injection nozzle (referring to Figure 50 etc.).

Because above-mentioned layout, the gas that ejects by injection nozzle can be through the outer face, from the Surface runoff of the periphery of the substrate of the side of arranging injection nozzle to the surface that is positioned at a side of arranging suction nozzle.Therefore, can remove unwanted film (referring to Figure 51 etc.) on the outer face that is coated in substrate reliably.Then, described processing gas (comprising the reaction by-product such as particle) can be inhaled into the bottom suction nozzle to be discharged from.Therefore, can prevent that particle from piling up on the substrate.

The bore dia of the described suction nozzle preferably bore dia than injection nozzle is bigger.

The bore dia of described suction nozzle is 2-5 times of bore dia of injection nozzle preferably.

For example, the preferably about 1-3mm of the bore dia of injection nozzle.On the other hand, the preferably about 2-15mm of the bore dia of suction nozzle.

Because above-mentioned layout, can prevent gas and the reaction by-product diffusion handled, and right reprocessed gas and reaction by-product can be sucked suction ports reliably to be discharged from.

Preferably be used for respect to injection nozzle along the circumferential whirligig of rotary plate relatively.

Preferably, injection tip is arranged in upstream side along the normal direction of the direction of rotation of substrate, and suction ports is disposed in downstream (referring to Figure 41 etc.).

Preferably, pharoid shines radiant heat between the injection nozzle and suction nozzle in the annular surface partly.

Because above-mentioned layout, when the peripheral part of the substrate between injection nozzle and suction nozzle was heated in the part, reactant gas can be in contact with it.In the time will removing the film (such as photoresist) that its etching speed increases along with the increase of temperature, this is effective.Owing to carry out localized heating, the part that can prevent from or suppress to need not to handle is heated.And, owing to can heat, can prevent particle reliably in non-contacting mode.This pharoid is laser heater preferably.

As preceding mentioning, such as the organic membrane of photoresist with removed situation under, reactant gas is ozone preferably.In order to produce this ozone gas, can use ozone generator or oxygen plasma.Under the situation of using ozone, preferably injection nozzle is provided with cooling device.Because this layout, ozone can keep low temperature, so that the life-span of ozone can be extended, and improves reaction efficiency.As the cooling device that is used for injection nozzle, for example, cooling channel is formed on the nozzle holding member that is used for keeping injection nozzle, and passes described cooling channel such as the coolant of cooling water.The temperature of coolant can be about room temperature.Preferably, the nozzle holding member is made up of splendid thermal conducting material.

The local irradiation optimum seeking site ground of pharoid departs from the injection nozzle side (referring to Figure 45 (b) etc.) between injection nozzle and suction nozzle.

Because above-mentioned layout is hit them in the near future at the reactant gas from nozzle, each process points of the peripheral part of substrate can heat illuminatedly.After this, the major part during reactant gas keeps hitting is utilized amount of residual heat will can keep high temperature, and can be improved treatment effeciency more reliably.

The direction of rotation of base material can be opposite with above-mentioned direction oppositely.Under the sort of situation, the suction nozzle side of the partial radiation optimum seeking site ground of pharoid skew between injection nozzle and suction nozzle.

Preferably, consider, set up the distance between injection nozzle and the suction nozzle suitably such as the factor of the heating properties of the rotary speed of whirligig and pharoid.

Also acceptable is: after the reactant gas that is used to remove unwanted material is guided the peripheral part of substrate, gas is guided so that flow on circumferentially by the guide path of extending along the periphery of substrate, thereby removes the unwanted material that is coated in such as on the peripheral part of the substrate of wafer.

Also acceptable is: the reactant gas feeder of equipment that is used to handle the peripheral part of wafer comprises the gas guiding part,

Described gas guiding part comprises guide path, described guide path along the circumferential extension of substrate to surround the peripheral part of substrate; With

Described reactant gas passes (referring to Figure 81 to 83 and 91 to 94 etc.) along the bearing of trend of guide path.

Because above-mentioned layout can increase the time of the periphery of spike contact substrate, and can improve reaction efficiency.And, can reduce required processing gas flow.

Described gas guiding part can be used the gas feeder as the second reactant gas feeder, and is suitable for removing the inoranic membrane such as Sin and SiO2.

Preferably, the gas guiding part comprises that the peripheral part that is used to make substrate removably inserts and wherein inserts port; And the width that inserts the inner terminal of port is expanded, thereby forms guide path.The thickness of described insertion port preferably is slightly larger than the thickness of substrate.When substrate was inserted in the insertion port, the space of inserting between port and the substrate was preferably as far as possible little.

Preferably, the end on the bearing of trend of guide path is connected with the guiding port that is used for reactant gas, and the other end with discharge port and be connected (referring to Figure 82 etc.).Because this layout, reactant gas can flow to the other end from an end of guide path.

Being used for preferably being set to rotary speed along the whirligig that circumferentially relatively rotates the gas guiding part of substrate can be conditioned.

Because above-mentioned layout, unwanted material can be removed equably from the whole periphery of the peripheral part of substrate, and by regulating rotary speed, can regulate the processing width of unwanted material.Rotary speed is preferably in 1rpm arrives the scope of 1000rpm, more preferably in 10rpm arrives the scope of 300rpm.If rotary speed surpasses 1000rpm, the time of reactant gas contact target part excessively reduce and from rather than preferred.

Preferably, the gas flow direction in the guide path is aimed at the direction of rotation of substrate.

Also acceptable is: the irradiator of pharoid be set in the guide path or near.

Described irradiator can additionally be connected to the gas guiding part.Preferably, the hot transmittance that is used to make irradiator embeds the gas guiding part by its light transparent member, so that in the face of guide path (referring to Figure 96 etc.).

Since above-mentioned layout, the using gases guiding part, and can remove needs heating etched inoranic membrane such as photoresist and polymer (for example SiC).

On being layered in substrate, at high temperature can etched first inoranic membrane (for example SiC) and second inoranic membrane (for example SiO2) that at high temperature etching speed is lower than first inoranic membrane in only one will be removed the time, the gas guiding part with irradiator is also effective.

Preferably, the peripheral part of the substrate in the described heater heats upstream side (guide end oral-lateral) of guide path (especially, the) guide path.Equally preferably, described heater heats is positioned at the peripheral part (as Figure 95 etc.) of the substrate of upstream side along the direction of rotation of guide path.

Preferably, the gas flow direction in the guide path is aimed at the direction of rotation of substrate, and irradiator with the ethod of remittance with hot rayed near the upstream extremity of guide path (referring to Figure 95 etc.).Because this layout, in the position near the upstream extremity of guide path, the peripheral part of substrate can be by radiation heating; The film that is coated on the periphery of substrate can fully react with fresh reactant gas; And after this,, not only, can produce satisfied reaction in the part of the upstream side of guide path but also in mid portion and downstream part because substrate short time towards the rotation of the downstream of guide path the time keeps high temperature.Because accessing reliably, this layout, treatment effeciency improve.

Comprise such as being easy to generate residue at film, in other words, be tending towards producing solid-state byproduct at normal temperatures, the situation of composition under, can be by above-mentioned heater localized heating along the direction of rotation of guide path in the periphery of the substrate in downstream.Because this layout, residue can be evaporated, and is removed by the periphery from substrate.For example, when SiN is etched, produce such as (NH4) 2SiF6, each of NH4F.HF all is solid-state byproduct.This residue can be evaporated by heater and remove.

Also acceptable is: remove the gas guiding part, described equipment comprises as the organic membrane of the above-mentioned first reactant gas feeder removes head; And described organic membrane is removed head and is comprised: the irradiator that is used for the radiant heat part is applied to the peripheral part of substrate; And gas supply member, be used for first reactant gas such as containing the oxygen reactant gas with organic membrane reaction is supplied to the peripheral part (referring to Figure 79 and other) of substrate.Described organic membrane removal processing head and gas guiding part be circumferentially arranging along platform preferably with leaving.The solid-state byproduct that produces during the process of using gases guiding part is preferably removed the irradiator heating of handling head by organic membrane, so that be evaporated and remove.

As mentioned above, in a word, be formed in the part of circular wafer peripheral part such as the cutting part of directional plane and recess.

Also acceptable is: described wafer is set on the platform; Then, described centers on the rotation rotation; Described processing fluid (reactant gas) is supplied with from supply nozzle, simultaneously supply nozzle is directed to the peripheral part of wafer wherein and moves through first point perpendicular to rotation, if and cause changing by the rotation of platform, according to point continuously or temporarily change along first sliding supply nozzle (referring to Figure 99 etc.).

Preferably, described wafer is arranged on the platform with one heart; Described is rotated around rotation; Handling fluid (reactant gas) is supplied with from supply nozzle, simultaneously when the circular portion of the peripheral part of wafer moves through first by keeping supply nozzle to point to being arranged on first to go up and leave the distance that rotation equals the radius of wafer substantially, and when the cutting part of the peripheral part of wafer moves through first by according to crossing point (or traverse point) along first variation along first sliding supply nozzle, supply nozzle points to the peripheral part of wafer wherein always and moves through first crossing point perpendicular to rotation.

The equipment that is used to handle the peripheral part of wafer can comprise:

Platform, wafer arrangement on described platform and described rotate around rotation;

Handle fluid (reactant gas) supply nozzle, described supply nozzle is along being mounted slidably perpendicular to first of rotation; With

The nozzle location governor motion, described nozzle location governor motion is used for by the continuous or temporary transient position that changes along the first axial adjustment supply nozzle according to crossing point, supply nozzle is often pointed to crossing point, and wherein at described crossing point, the peripheral part of wafer moves through first (referring to Figure 99 etc.).

The equipment that is used to handle the peripheral part of wafer can comprise:

Platform around rotation (central axis) rotation;

Aligning guide is used for aiming at wafer arrangement that ground (with one heart) will have circular circumference portion at treatment bench, wherein partly is formed in the described circular circumference portion such as the cutting part of directional plane and recess;

The edge is perpendicular to processing fluid (reactant gas) supply nozzle of first setting of rotation slidably; With

The nozzle location governor motion, be used to keep supply nozzle static, when the circular circumference portion of wafer moves through first, supply nozzle is directed to described crossing point simultaneously, promptly on first, leaves the position of the distance that equals wafer radius substantially from rotation; And be used for when the cutting part of wafer moves through first variation according to crossing point along first sliding supply nozzle, thereby supply nozzle is often pointed to crossing point (referring to Figure 97 to 99 etc.).

Also acceptable is: described reactant gas feeder comprises along perpendicular to first of the central axis of platform reactant gas supply nozzle slidably,

Described wafer is arranged on the platform with one heart, and platform rotates around central axis,

When the circular circumference portion of wafer moved through first, it is static that the distal portion of supply nozzle keeps, and leaves the position of the distance that equals wafer radius from central shaft on directed first simultaneously; With

When the cutting part of wafer moved through first, supply nozzle synchronously slided along first rotation with platform, so that the distal portion of supply nozzle is often pointed to crossing point (referring to Figure 97 to 99 etc.).

Preferably, aligning guide comprises the cutting part probe portion of the cutting part that is used to survey wafer, and cutting part points to predetermined direction concurrently with concentric operation.

Described nozzle location governor motion is preferably synchronously regulated the position of supply nozzle with the rotation of platform.That is, when platform was in the scope of the anglec of rotation that moves through first required time period corresponding to circular circumference portion, supply nozzle was fixed to and leaves the position of the distance that equals wafer radius substantially from rotating shaft on first; And when platform is in the scope of the anglec of rotation that moves through first required time period corresponding to cutting part, make supply nozzle have corresponding to the speed of the anglec of rotation of platform and rotary speed and direction (along first towards rotation or leave the direction of rotation).As the result of this Synchronization Control, supply nozzle preferably often points to the point that supply nozzle moves through first.

On the other hand, under the situation of aiming at, need the equipment cost of aligning guide by aligning guide; And, wafer need be sent to the required time of rotating platform from the position of aiming at.And alignment precision depends on robots arm's performance accuracy.

Also acceptable is: described wafer is set on the platform; Then, this rotates around rotation (central axial line); The supply nozzle of handling fluid (reactant gas) points to the peripheral part of wafer wherein and moves through point perpendicular to first place of rotation; And when crossing point changes according to the rotation of platform, supplying processing fluid, simultaneously according to described variation along first sliding supply nozzle (referring to Figure 105 etc.).

Preferably, described wafer is set on the platform; Then, this is around rotation (central axial line) rotation; The instantaneous point that the peripheral part of calculating wafer moves through; Supplying processing fluid (reactant gas) simultaneously based on result calculated, by the position along first adjusting supply nozzle, often points to crossing point (referring to Figure 105 etc.) with supply nozzle.

Because above-mentioned layout can cancel eccentric correction aligning guide, and the structure of described equipment can be simplified.And, owing to can cancel alignment function, can shorten the entire process time.

With the calculating of carrying out instantaneous crossing point every now and then concurrently, also acceptable is: position and the supplying processing fluid of regulating supply nozzle.

Under the sort of situation, preferably,, at the upstream side of supply nozzle, measure the position of the peripheral part of wafer, and carry out aforementioned calculation based on this measurement result along the direction of rotation of platform.

Also acceptable is: after the whole periphery of the peripheral part of wafer is carried out the calculating of crossing point, regulate the position and the supplying processing fluid of supply nozzle.

The equipment that is used to handle the peripheral part of wafer can comprise:

Arrange wafer and the platform that rotates around rotation (central axis) on it;

Along first processing fluid (reactant gas) supply nozzle that is mounted slidably perpendicular to rotation;

Calculator, the peripheral part that is used to calculate wafer move through first instantaneous point and

The nozzle location governor motion is used for based on result calculated, by the position along first adjusting supply nozzle, fluid supply nozzle is often pointed to crossing point (referring to Figure 103 to 105 etc.).

Also acceptable is: described reactant gas feeder comprises along perpendicular to first of the central axis of platform reactant gas supply nozzle slidably,

Described is rotated around central axis and to keep wafer simultaneously;

Described equipment also comprises: calculator, the peripheral part that is used to calculate wafer move through perpendicular to first instantaneous point of central axis and

Supplying processing fluid simultaneously based on result calculated, by the position along first adjusting supply nozzle, often points to crossing point (referring to Figure 103 to 105 etc.) with supply nozzle.

Described calculator preferably includes the measuring appliance of the periphery that is used to measure wafer.

The effect of invention

According to the present invention, reactant gas can be allowed to flow along the peripheral part of substrate.Can be extended the time of contact of described reactant gas and described substrate.The efficient that does not need material that removes on described peripheral part also can be improved.And the gas after handling can be allowed to roughly to flow out along the circumferencial direction of substrate, thereby can prevent that particle adhesion is to substrate.

Description of drawings

Fig. 1 is the cross-sectional elevational view along the line I-I of Fig. 2 according to the equipment of the peripheral part that is used for treatment substrate of first embodiment of the invention;

Fig. 2 is the vertical view of the said equipment.

Fig. 3 is the cross-sectional elevational view of up-sizing of the film removal portion of the said equipment;

Fig. 4 (a) be illustrate wherein the chip temperature contrast of measuring by same apparatus shown in Figure 1 from will be near the heated part of the outer end edges of wafer the curve of the experimental result of the distance of inward direction radially.

Fig. 4 (b) illustrates wherein than near the more approaching position that is heated part of the comparison position among Fig. 4 (a) (be right after the be heated part) curve as the measurement temperature of the starting point of trunnion axis.

Fig. 5 be illustrate wherein utilize chip temperature contrast that same apparatus shown in Figure 1 measures from will be near the heated part of outer end periphery of wafer the curve of another experimental result of the distance of inward direction radially.

Fig. 6 is improved an explanation front view according to heat dump.

Fig. 7 is improved an explanation front view according to heat dump.

Fig. 8 is improved an illustrative vertical view according to heat dump.

Fig. 9 is the improved explanation vertical view of platform heat dump.

Figure 10 is improved an illustrative vertical view according to heat dump.

Figure 10 (b) is the explanation front view of the platform of Figure 10 (a).

Figure 11 is improved the explanation front view that is used as heat dump according to Peltier (Peltier) element wherein.

Figure 12 is that wherein heat dump only is placed on the vertical view of the platform of perimeter region.

Figure 13 is the explanation end view of platform shown in Figure 12 etc.

Figure 14 is the vertical view of up-sizing that the peripheral region of the recess in the periphery that is formed on wafer is shown; When Figure 14 (a) has shown the exposure spots constant diameter that wherein keeps the laser radiation unit, the state that the peripheral region of recess is processed; Figure 14 (b) illustrates another state that exposure spots diameter wherein increases in the recess position; And Figure 14 (c) has shown the state after the processing of Figure 14 (b) is performed.

Figure 15 illustrates wherein when the exposure spots diameter is set to 1mm, and the laser radiation unit focuses on the explanation front view of the state on the periphery of wafer.

Figure 16 illustrates wherein by focusing so that the exposure spots diameter is 3mm, the explanation front view of the state that the peripheral region of recess is processed on the periphery of the wafer of laser radiation unit.

Figure 17 is used to illustrate that wherein the laser radiation unit is along the meticulous slip of the radial direction of wafer, so that the front view of the treatment state that the processing width becomes bigger than exposure spots diameter.

Figure 18 (a) is that the vacuum of wherein packing into holds the vertical view of the platform of (or sucker) mechanism.

Figure 18 (b) is the explanation elevational sectional view of the platform of Figure 18 (a).

Figure 19 (a) is improved a vertical view according to the vacuum catch mechanism.

Figure 19 (b) is the explanation cross sectional elevation of the platform of Figure 19 (a).

Figure 20 is the vertical view according to the platform of the modification of vacuum catch mechanism.

Figure 21 is the cross sectional elevation of the platform of Figure 20.

Figure 22 is the vertical view that only is placed on the platform of perimeter region according to catch mechanism wherein.

Figure 23 is the cross sectional elevation of the platform of Figure 22.

Figure 24 is the cross sectional elevation that illustrates according to the equipment of the peripheral part that is used for treatment substrate of the improvement embodiment of reactant gas feeder etc.

Figure 25 is the cross sectional elevation that illustrates according to the equipment of the peripheral part that is used for treatment substrate of the improvement embodiment of reactant gas feeder etc.

Figure 26 is the cross sectional elevation that illustrates according to the equipment of the peripheral part that is used for treatment substrate of the improvement embodiment of reactant gas feeder etc.

Figure 27 is the cross sectional elevation that illustrates according to the equipment of the peripheral part that is used for treatment substrate of the improvement embodiment of arrangement relation between pharoid and the reactant gas feeder etc.

Figure 28 is the cross-sectional elevational view of up-sizing that the film removal portion of equipment shown in Figure 27 is shown.

Figure 29 is the cross sectional elevation of equipment of the peripheral part that is used for treatment substrate that the improvement embodiment of reactant gas supply source according to the reactant gas feeder etc. is shown.

Figure 30 is the cross sectional elevation that illustrates according to the equipment of the peripheral part that is used for treatment substrate of the improvement embodiment of pharoid, reactant gas feeder etc.

Figure 31 is the cross sectional view of overlooking along the said equipment of the straight line XXXI-XXXI among Figure 30.

Figure 32 be illustrate utilize wherein that same apparatus shown in Figure 30 measures near the chip temperature contrast at the outer end edges place of the wafer curve of the experimental result of the distance of inward direction radially with heated part.

Figure 33 is the curve that ozone half life of decomposition reduced temperature is shown.

Figure 34 is the cross sectional elevation of equipment that the peripheral part that is used for treatment substrate of the improvement embodiment that is attached to use according to wherein nozzle cooling end, inert reaction gas feeder etc. is shown.

Figure 35 is the cross sectional elevation that illustrates according to the equipment of the peripheral part that is used for treatment substrate of the improvement embodiment of the pharoid of Figure 34.

Figure 36 is the cross sectional elevation that illustrates according to the equipment of the peripheral part that is used for treatment substrate of the improvement embodiment of nozzle cooling end.

Figure 37 illustrates the wherein cross sectional elevation of the equipment of the peripheral part that is used for treatment substrate of the improvement embodiment of additional using gases memory of basis.

Figure 38 illustrates the wherein additional explanation front view that uses the embodiment of light transmitting shell portion.

Figure 39 illustrates wherein the explanation front view of embodiment that many optical fiber are used as the optical system of pharoid.

Figure 40 (a) comprises rotating the cross sectional elevation that stream forms the injection tip formation part of parts.

Figure 40 (b) comprises rotating the side cross-sectional view that stream forms the injection tip formation parts of part.

Figure 41 be illustrate the peripheral part that is used for treatment substrate that comprises that the process head that comprises injection nozzle and discharge nozzle is divided equipment overlook cross sectional view.

Figure 42 is the explanation front view of equipment of the peripheral part that is used for treatment substrate of Figure 41.

Figure 43 is the improved explanation vertical view that the equipment of the peripheral part that is used for treatment substrate that comprises injection nozzle and discharge nozzle is shown.

Figure 44 is the explanation front view of the equipment of the peripheral part that is used for treatment substrate shown in Figure 43.

Figure 45 (a) is the front view of up-sizing that the nozzle segment of equipment shown in Figure 43 is shown; And Figure 45 (b) is its upward view.

Figure 46 (a) is when being illustrated in the peripheral part at the back side that utilizes local laser irradiation rotation wafer, the explanation vertical view of the measurement result of Temperature Distribution on the front of wafer.

Figure 46 (b) is the curve that illustrates along the measurement result of the circumferential temperature contrast position at the back side of wafer shown in Figure 46 (a).

Figure 47 is the explanation vertical view of another modification that the equipment of the peripheral part that is used for treatment substrate that comprises the processing head that comprises injection nozzle and discharge nozzle is shown.

Figure 48 is the explanation front view of the equipment of the peripheral part that is used for treatment substrate shown in Figure 47.

Figure 49 illustrates the vertical view of schematic construction of equipment of peripheral part that is used to handle wafer of modification that is set at the radius outside of wafer according to suction nozzle wherein.

Figure 50 illustrates the vertical view of schematic construction of equipment of peripheral part that is used to handle wafer of modification that is set at the opposite side place of injection nozzle according to suction nozzle wherein with respect to wafer.

Figure 51 is the amplification cross sectional view along the peripheral region of the wafer peripheral part of the straight line L1-L1 of Figure 50.

Figure 52 is the explanation vertical view of the equipment of the peripheral part that is used for treatment substrate of the irradiation direction peripheral part that points to wafer downwards from the upside and the radius outer inclination of wafer wherein.

Figure 53 is the explanation front view of equipment that is used for the peripheral part of treatment substrate shown in Figure 52.

Figure 54 is the cross-sectional elevational view that up-sizing ground shows the peripheral part of illumination unit shown in Figure 53 and wafer.

Figure 55 is the cross sectional view of the peripheral part of the wafer after unwanted film is removed.

Figure 56 be wherein irradiation direction just pointing to from the side of wafer wafer illumination unit face the cross-sectional illustration view.

Figure 57 is the explanation front view of the illumination unit of the irradiation direction peripheral part that is directed upwards towards wafer from the downside and the radius outer inclination of wafer wherein.

Figure 58 is the explanation front view of equipment that comprises the peripheral part that is used for treatment substrate of oblique illumination unit and vertical irradiation unit.

Figure 59 is the explanation front view of equipment that comprises the peripheral part that is used for treatment substrate of the mechanism that is used for accurate mobile illumination unit above wafer.

Figure 60 is the explanation front view of equipment that comprises the peripheral part that is used for treatment substrate of the mechanism that is used for accurate mobile illumination unit below wafer.

Figure 61 is the vertical cross-section along the straight line LXI-LXI of Figure 62 that the equipment of the peripheral part that is used for treatment substrate that comprises handle spoon type nozzle is shown;

Figure 62 is the vertical cross-section along the processing head of the straight line LXII-LXII among Figure 61.

Figure 63 is the cross sectional view of overlooking along the equipment of the peripheral part that is used for treatment substrate of the straight line LXIII-LXIII of Figure 61.

Figure 64 is the cross sectional view of overlooking along the equipment of the peripheral part that is used for treatment substrate of the straight line LXIV-LXIV of Figure 61.

Figure 65 is the perspective view of handle spoon type nozzle.

Figure 66 is the explanation sectional view of up-sizing that the peripheral part of the wafer after unwanted film is removed by Figure 61 apparatus shown is shown.

Figure 67 is the vertical view of equipment of the peripheral part that is used for treatment substrate of Figure 61.

Figure 68 (a) to (c) illustrates the short tube portion of handle spoon type nozzle and the explanation vertical view that example is set of the arrangement relation between the wafer periphery.

Figure 69 is the explanation front view that is used for measuring the experimental facilities that the experiment of the light transmission features of handle spoon type nozzle uses.

Figure 70 is the improved perspective view that handle spoon type nozzle is shown.

Figure 71 is the up-sizing explanation cross sectional view that the state of wafer periphery is shown, and wherein uses the equipment of peripheral part that is used to handle base material of the handle spoon type nozzle of Figure 70 to remove unwanted film from described state utilization.

Figure 72 is the vertical cross-section along the straight line LXXII-LXXII of Figure 73 of modification embodiment of discharge system that the equipment of the peripheral part that is used for treatment substrate that is provided with handle spoon type nozzle is shown.

Figure 73 is the vertical cross-section along the said equipment of the straight line LXXIII-LXXIII of Figure 72.

Figure 74 is the vertical cross-section along the straight line LXXIV-LXXIV of Figure 75, has shown the equipment of the peripheral part that is used for treatment substrate that replaces handle spoon type nozzle arrangement long cylinder nozzle.

Figure 75 is the vertical cross-section along the processing head of the said equipment of the straight line LXXIII-LXXIII of Figure 74.

Figure 76 is the vertical view of above-mentioned long cylinder nozzle.

Figure 77 is the explanation sectional view that up-sizing ground shows the periphery of utilizing the equipment after the unwanted film of Figure 74 apparatus shown is removed.

Figure 78 is the amplification cross sectional view of the peripheral part of the wafer of stacked organic membrane and inoranic membrane on it; (a) shown that organic membrane and inoranic membrane are removed preceding state; (b) shown that wherein organic membrane is removed but the not removed state of inoranic membrane; And (c) shown state after organic membrane and inoranic membrane are removed.

Figure 79 is the explanation vertical view of schematic construction that the equipment of the peripheral part that is used for treatment substrate that is suitable for use in two kinds of film-stack wafers shown in Figure 78 is shown.

Figure 80 is the explanation front view of equipment that is suitable for use in the peripheral part that is used for treatment substrate of two kinds of film-stack wafers.

Figure 81 is second vertical view of handling head (gas guiding part) of equipment that is suitable for the peripheral part that is used for treatment substrate of two kinds of film-stack wafers.

Figure 82 is second cross sectional view of handling head that wherein appears on circumferentially (longitudinal direction) along the straight line LXXXII-LXXXII of Figure 81.

Figure 83 is a cross sectional view of handling head (gas guiding part) along second of the straight line LXXXIII-LXXXIII among Figure 81.

Figure 84 illustrates to use and identical second handle the experimental result of head and show that the film thickness after unwanted film is removed contrasts from the curve of the radially inner distance in outer end of wafer shown in Figure 81.

Figure 85 is the improved schematic construction view that the equipment of the peripheral part that is used for treatment substrate that is suitable for use in two kinds of film-stack wafers is shown.

Figure 86 (a) be illustrate be suitable for use in above-mentioned two kinds of film-stack wafers and organic membrane remove the explanation front view of another improved schematic construction of the equipment of handling the ongoing peripheral part that is used for treatment substrate.

Figure 86 (b) illustrates the explanation front view that inoranic membrane is removed the equipment of handling ongoing Figure 86 (a).

Figure 87 is the improved vertical cross-section that the platform structure that comprises central pad is shown.

Figure 88 illustrates the stationary magazine creel of platform structure of Figure 87 and the up-sizing vertical cross-section diagram of the peripheral region between the rotating cylinder.

Figure 89 (a) is the horizontal sectional view along the shaft assembly of the platform of the straight line LXXXIXA-LXXXIXA of Figure 88.

Figure 89 (b) is the horizontal sectional view along the shaft assembly of the platform of the straight line LXXXIXB-LXXXIXB of Figure 88.

Figure 89 (c) is the horizontal sectional view along the shaft assembly of the platform of the straight line LXXXIXC-LXXXIXC of Figure 88.

Figure 90 shows that schematically second handles the improved cross sectional elevation of head.

Figure 91 is the vertical view of the second processing head (gas guiding part);

Figure 92 is the vertical view that the gas guiding part of its length increase on every side is shown.

Figure 93 is the vertical view that the gas guiding part that length reduces around it is shown.

Figure 94 (a) is the cross sectional view of several modification embodiment that the cross section structure of gas guiding part is shown to 94 (e).

Figure 95 is the vertical view that the embodiment of the gas guiding part that can handle the film that needs heating is shown.

Figure 96 is the amplification cross sectional view along the straight line XCVI-XCVI among Figure 95;

Figure 97 is the side cross-sectional view of target part of equipment that the peripheral part that is used for treatment substrate of the directional plane that can handle the periphery that is formed on wafer or recess is shown.

Figure 98 is the vertical view of Figure 97, (a) has shown the state that wafer wherein picks up from box; (b) shown another state that wafer wherein is aligned; (c) shown that wafer wherein is set to another state of described part.

Figure 99 (a) illustrates as time goes by to 99 (i), partly locates in the target of Figure 97, and how unwanted film is from the removed vertical view of the peripheral part of wafer.

Figure 100 view that to be the configuration information that wherein is stored in the supply nozzle position in the control assembly of nozzle-regulation mechanism show with the form of curve.

Figure 101 is the vertical view with the directional plane that amplifies the mode shows wafer.

Figure 102 adopts the form of curve to show the view of modification example of the configuration information of Figure 100.

Figure 103 is the side cross-sectional view that the target part of the equipment that need not to aim at the peripheral part that can handle wafer is shown.

Figure 104 is the vertical view of Figure 103, (a) has shown the state that wafer wherein picks up from box; (c) shown that wherein wafer is set to target another state partly.

Figure 105 (a) is that order shows that per 1/4 circulation is used for removing the vertical view of the step of the unwanted film on the peripheral part of wafer of the processing section that is coated in Figure 103 and 104 apparatus shown to 105 (e).

Figure 106 is the flow chart of operation that the equipment of Figure 103 and 104 is shown.

Figure 107 is the flow chart of modification embodiment of operation that the equipment of Figure 103 and 104 is shown.

Figure 108 is the curve that the relation of the etching speed that utilizes the ozone organic membrane and temperature is shown.

The description of label

10..... platform

10a..... stayed surface

13..... adsorption hole (or inhaling hole, SS)

14..... suction path (or attracting path)

15..... adsorption tank (or bothrium, suction socket)

16..... cannelure

17..... connectivity slot

20..... laser heater (pharoid)

21..... lasing light emitter

22..... illumination unit (irradiator, or irradiator)

23.... fiber optic cables (optical transmission system)

30..... plasma spray mouth (reactive gas source)

36..... injection nozzle

36a..... injection tip

41..... cooling medium chamber (heat dump)

41C..... annular cooling chamber

41U, 41L..... cooling medium chamber (heat dump)

46..... coolant path (heat dump)

47..... annular channels

46..... communication paths

Pe..... Peltier (Peltier) element (heat dump)

70..... ozone generator (reactive gas source)

75..... injection nozzle

76..... suction nozzle (or suction nozzle)

90..... wafer (substrate)

90a.... the peripheral part of wafer (or neighboring part of wafer)

92..... organic membrane

93..... cutting part such as recess, directional plane etc.

94..... inoranic membrane

92c, the film on the peripheral part of 94c..... wafer (unwanted material) (or unnecessary material, useless material)

100.... first handles head

110..... platform main body

111.... central head

120..... infrared heater (pharoid)

121..... infrared lamp (light source)

122..... convergence optical system (irradiator, or irradiator)

140..... rotary drive motor (rotating driving device)

150..... rotating cylinder

160..... handle spoon type nozzle

162..... introducing portion

161..... tube portion

161a..... cap

180..... stationary magazine creel

G1, the G2..... packing ring

200.... second handles head (gas guiding part)

201..... insertion opening

202.... guide path

204..... light transparent member

346..... nozzle location governor motion

350..... controller

375..... supply nozzle (injection nozzle)

P..... target location

C..... annular surface

Embodiment

Describe the preferred embodiments of the present invention in detail hereinafter with reference to accompanying drawing.

Fig. 1 to 3 has shown the first embodiment of the present invention.At first, with the substrate of describing as processing target.Shown in the dotted line of Fig. 1 and 2, substrate for example is a semiconductor wafer 90, and has the structure of circular sheet shape.As shown in Figure 3, the film of for example being made up of photoresist 92 is coated on the upper surface or front of wafer 90.The absorbing wavelength of photoresist is from 1500nm to 2000nm.Described film 92 is the entire upper surface of cover wafers 90 not only, but also arrives the peripheral part (or neighboring part) at the back side by the outer face.Provide a kind of equipment according to this embodiment, be used for removing as the material that does not need (or do not want, unnecessary, useless), be coated in the film 92c on the outer surface at wafer 90 back sides.

Be noted that the present invention is not limited to the equipment that is used to remove such as the type of the film on the peripheral part at the back side of the substrate of wafer 90, but also can be applied to be used to remove the equipment of other type of the film on peripheral part and the positive outer face.

As depicted in figs. 1 and 2, the equipment that is used for the peripheral part of treatment substrate comprises: framework 50; Platform 10 as the eyelid retractor that is used for supporting wafers 90; Laser heater 20 as pharoid; With as being used for the plasma spray mouth 30 of the feeder of supply response gas.

Described framework 50 comprises: the discoid base plate 51 of perforation; With from the periphery of described base plate 51 cylindrical shape perisporium 52 to upper process.Described framework 50 has the loop configuration that the cross section becomes the L type, and is fixed to unshowned supporting base.

Be arranged on framework 50 inside in the mode of surrounding for described 10 by framework 50.In vertical view, described 10 has the circular configuration concentric with perisporium 52, but has the diameter littler than perisporium 52.Described 10 perimeter side surface is tapered in the mode that downward diameter reduces.Be connected with unshowned rotary drive mechanism for described 10, and utilize rotary drive mechanism around central shaft 11 rotations.Also acceptable is: platform 10 is to fix, and rotary drive mechanism is connected to framework 50 and described framework 50 is rotated.

Handle wafer 90 and be positioned horizontally on the upper surface 10a (stayed surface, front) of platform 10, its center is consistent with the center of platform 10.

Though and not shown, vacuum or static hold (chuck, or sucker)) mechanism is loaded in the platform 10.Utilize this absorption catch mechanism, described wafer 90 is adsorbed and is fixed on the stayed surface 10a of platform 10.

The diameter of described 10 upper surface is slightly less than the diameter of circular wafer 90.Correspondingly, for the wafer 90 that is placed on the platform 10, the whole peripheral slight radial of the peripheral part of wafer 90 is outwards outstanding.That is, the peripheral part of described wafer 90 is positioned in the empty annular surface C place of periphery of the upper surface of virtual encirclement platform 10.The overhang of the peripheral part of described wafer 90 (width of empty annular surface C) for example is 3 to 5mm.Because this layout, the back side of described wafer 90 are exposed in the narrow office of whole periphery (opening wide).On the other hand, be positioned at the part of narrow, i.e. the major part at the whole back side of wafer 90 is with the upper surface abut of platform 10 and be capped.

The position that the periphery at wafer 90 back sides is placed on the platform 10 is with processed target location P.This target location P is positioned on the empty annular surface C.

As the material that forms platform 10, for example use thermal conductivity good and can cause occurring the aluminium of metallic pollution hardly.Also acceptable is: in order to obtain the corrosion resistance to reactant gas, externally go up the formation alumina layer in the surface by anodic oxidation, and be soaked in wherein such as the fluororesin of PTTE.

Be used for being set at the platform 10 of processing unit from the heat dump of upper surface 10a heat absorption.Particularly, the inside of platform 10 is hollow, and the inside of described hollow is restricted to coolant (or cold-producing medium.Cooling agent) chamber 41 (heat dump).Described cooling medium chamber 41 has sufficient internal capacity.Described cooling medium chamber 41 extends the whole area that spreads all over platform 10 (along circumferential whole periphery and integral body radially).Described cooling medium chamber 41 is communicated with coolant supply passageway 42 and coolant drain passageway 43.Coolant supply passageway 42 and coolant drain passageway 43 are communicated with the inside that extends through central shaft 11 from platform 10.

The upstream extremity of described coolant supply passageway 42 is connected to unshowned coolant supply source.By coolant supply passageway 42, described coolant supply source supplies to cooling medium chamber 41 with for example water as coolant.Thus, cooling medium chamber 41 is full of water.Water temperature can be a normal temperature.By coolant drain passageway 43, be appropriately discharged as the water of coolant, and supplied with again by coolant supply passageway 42.The coolant of described discharge can be returned to the coolant supply source, is used for recirculation so that it can be cooled once more.

Replace water, can use air, helium etc. as coolant.Also acceptable is: coolant can adopt the form of compressed fluid, and compressed fluid effectively sent into cooling medium chamber 41, so that it flows in cooling medium chamber 41.

Described heat dump can be disposed in the peripheral part (being right after the interior section of the ledge of wafer 90 peripheries) of platform 10 at least and locate, and is not arranged in the central portion office.

Be positioned at the top of the base plate 51 of arm 50 for described 10, and at the top of perisporium 52 and the cardinal principle intermediate altitude place between the bottom.Described 10 diameter is bigger than the inner rim of base plate 51.Because this layout, the inner end edge of base plate 51 radially enters the inside of the downside (dorsal part) of platform 10.

Labyrinth 60 is set between the inner periphery of the lower surface of platform 10 and base plate 51.Described labyrinth 60 comprises a pair of upper and lower labyrinth ring 61,62.Described top labyrinth ring 61 comprises a plurality of how annular suspender member 61a concentric with platform 10, and is fixed to the lower surface of platform 10.Thereby described bottom labyrinth ring 62 comprises the polycyclic prodger 62a that a plurality of and framework 50 are concentric and platform 10 is concentric, and is fixed to the upper surface of the base plate 51 of framework 50.The suspender member 61a of described top labyrinth ring 61 and the prodger 62a of bottom labyrinth ring 62 are bonded to each other in " zig-zag type " mode.Described framework 50, platform 10 and labyrinth seal 60 define annular space 50a.

The suction path 51c that extends from each trench portion of labyrinth ring 62 is formed on the base plate 51 of framework 50.By pipe-line system, described suction path 51c is connected to suction (or suction)/discharger (not shown) that comprises vacuum pump, discharge treatment system etc.Described suction path 51c, pipe-line system and suction/discharge treatment system constitutes " annular space aspirator ".

The illumination unit 22 (irradiator) of described laser heater 20 is connected to the radially outer of the labyrinth ring 62 of framework 50, so that leave the neighboring of platform 10 downwards.

Described laser heater 20 comprises: as the lasing light emitter 21 of point-source of light; With illumination unit 22, described illumination unit 22 is connected to lasing light emitter 21 by the optical transmission system 23 such as optical cable by optics.

For example, LD (semiconductor) lasing light emitter is used as lasing light emitter 21.It is the laser beam (heat bundle) of 808nm to 940nm that described lasing light emitter 21 is launched emission wavelength.Described emission wavelength can be set in the scope corresponding to the absorbing wavelength that is coated in the photoresist film 92 on the wafer 90.

Described lasing light emitter 21 is not limited to LD, can select from the light source such as multiple other type of YAG, excimers etc.Optical maser wavelength by lasing light emitter 21 outputs is preferably longer than wavelength of visible light, so that tunicle 92 absorbs easily.More preferably, the absorbing wavelength coupling of the wavelength of lasing light emitter 21 outputs and film 92.

Also acceptable is: light source 21 is accommodated in the unit 22, and saves the optical transmission system 23 such as optical fiber.

Described laser radiation unit 22 than plasma spray mouth 30 further from target location P.As shown in Figure 2, a plurality of (among Fig. 2 3) laser radiation unit 22 along framework 50 circumferentially, thereby along platform 10 circumferentially, be provided with equidistantly.As shown in Figure 1, laser radiation unit 22 is disposed in through on target location P and the straight line L1 vertical with extensional surface.The laser irradiation direction of described laser radiation unit 22 be oriented at the top of straight line L2 just and with platform 10 on the peripheral part vertical (intersection) of wafer 90.

A plurality of opticses such as convex lens, cylindrical lens etc. are accommodated in the laser radiation unit 22.As shown in Figure 3, utilize laser radiation unit 22, by head for target position P, the peripheral part that promptly is placed on the back side of the wafer 90 on the platform 10 is assembled from light source 21 emitted laser L.Focal adjustments mechanism is loaded in the laser radiation unit 22.By using this focal adjustments mechanism, described laser beam can correctly be focused on the P of target location, and in addition, the focus of laser beam can go up below-center offset slightly with respect to target location P.

Because above-mentioned layout, the optically focused diameter on the peripheral part of wafer 90 and be heated the zone of part thus, and the density of irradiation energy and be heated heating-up temperature partly thus can be adjusted.Described focal adjustments mechanism comprises slide mechanism, for example is used for sliding along optical axis direction being arranged in condenser lens in the laser radiation unit 22.Described focal adjustments mechanism can be the type that wherein whole laser radiation unit slides along optical axis direction.

Described optical transmission system 23 and illumination unit 22 constitutes " optical system ", be used in indiffusible mode, near thermal light source is sent to the target location after, will from the thermal light source of light source 21 emissions assemble and irradiation to the target location.

As shown in Figure 1, plasma spray mouth 30 is connected to the perisporium 52 of framework 50.Described plasma spray mouth 30 radially is arranged on outside the P of target location, and with respect to target location P, to arrange with laser radiation unit 22 different directions from each other.As shown in Figure 2, arrange with same intervals along circumferential (peripheral direction) of platform 10 as the plasma spray mouth 30 of the similar number of laser radiation unit 22 (in Fig. 2 3).And, each plasma spray mouth 30 is along the circumferential arrangement identical with corresponding laser radiation unit 22, or be arranged on along the direction of rotation of wafer 90 position in the downstream slightly of corresponding laser radiation unit 22, so that form a pair of with corresponding laser radiation unit 22.

Described plasma spray mouth 30 has tapered step-like cylindrical structural.Described plasma spray mouth 30 is arranged as its axis of radial direction horizontal orientation along platform 10.As shown in Figure 1, plasma spray mouth 30 holds pair of electrodes 31,32 therein.Described electrode 31,32 has double tubular structure, and annular normal pressure space 30a is formed between the electrode 31,32.Solid dielectric is applied at least one the apparent surface in the electrode 31,32.

Interior electrode 31 is connected with unshowned power supply (electric field generation device), and external electrode 32 ground connection.Power supply is for example exported the voltage of pulse type to electrode 31.What expect is: the rise time of described pulse and/or fall time are 10 microseconds or littler, and the electric field strength in the inter-electrode space is 10 to 1000k/cm, and frequency is 0.5kHz.Replace pulse voltage, can export such as the continuous wavy voltage of sine wave etc. etc.

In the face of the base end part (upstream extremity) of the opposite side of platform 10 sides of inter-electrode space 30a is connected with unshowned processing gas supply source.Described processing gas supply source is for example storing oxygen etc. therein as handling gas, and the gas of appropriate amount is supplied to inter-electrode space 30a at every turn.

Show well that as Fig. 3 plasma spray mouth 30 is set at the distal portion in the face of platform 10 sides, and have the injection tip formation parts 33 that discoid resin is made.Injection tip 30b is formed in the middle body of described injection tip formation parts 33.Described injection tip 30b is connected to the downstream in the face of platform 10 sides of inter-electrode space 30a.Described injection tip 30b is positioned on the extensional surface of upper surface 10a of platform 10 or a little less than it, so that the axis of injection tip 30b is along the radial direction horizontal orientation of platform 10, and to the distal openings of plasma spray mouth 30.The far-end of described plasma spray mouth 30 and thus injection tip 30b be disposed near the P of target location, like this when wafer 90 is placed on the platform 10, the far-end of plasma spray mouth 30 etc. are extremely near the outer end edges of wafer 90.Handling reactant gas G that gas become by plasma is ejected along the axis of injection tip 30b.Described injection direction and the irradiation direction of the laser beam L of laser heater 20 vertical (having angle).Cross section between injection direction and the irradiation direction is usually located at the back side (or reverse side) of the peripheral part of the wafer 90 that is placed on the platform 10.

Suction ports (or adsorbing port, inhalation port) 30c forms between parts 34 and the injection tip formation parts 33 at distal surface and is formed in the distal surface of plasma spray mouth 30.Described suction ports 30c has and is arranged near the injection tip 30b with the loop configuration around injection tip 30b.As shown in Figure 1, by being formed on the suction path 30d in the plasma spray mouth 30, suction ports 30c is connected to unshowned suction (or suction)/discharger.Described suction ports 30c, suction path 30d and suction/discharger have constituted " aspirating (or adsorbing suction) device near the injection tip " or " annular space suction (or adsorbing suction) is installed ".

Described plasma spray mouth 30, power supply, processing gas supply source, suction/discharger etc. have constituted the atmospheric plasma processing unit.

To describe the equipment of the peripheral part of the wafer that is used to remove structure like this now, be used to remove the method for the film 92c on the peripheral part (or neighboring part) at the back side that is coated in wafer 90.

Utilize transfer robot etc., processed wafer 90 is placed on one heart on the upper surface of platform 10 and is held.In whole periphery, the peripheral part of described wafer 90 radially is projected into outside the platform 10.Laser beam L is launched by the laser radiation unit 22 from laser heater 20, so that focus on the back side of the outstanding peripheral part of wafer 90 usually, or target location P.By so doing, the film 92c that is coated on the peripheral part at the back side of wafer 90 can be with point sample state (part) by irradiated heat.Because laser beam L is a gathered light, laser energy can be applied to high-density and be heated part (under the situation of Wavelength of Laser corresponding to the absorbing wavelength of film 92c, absorption efficiency can further improve).Thus, the heated point-like part of film 92c can be by the instantaneous hundreds of degree (for example, 600 degree Celsius) that are heated to.

Because this is irradiated heat, the part that is heated of wafer 90 need not to contact and also can not produce with heating source particle (or particulate).

With the aforementioned operation while, handle gas (oxygen etc.) from handling the inter-electrode space 30a that the gas supply source is fed into plasma spray mouth 30.And pulse voltage is fed into electrode 31 from clock, and pulse voltage is directed to inter-electrode space 30a.By doing like this, atmospheric pressure glow discharge plasma is formed in the inter-electrode space 30a, and is formed by the processing gas such as oxygen such as the reactant gas of ozone and oxygen base.This reactivity (or active) gas is ejected by injection tip 30b, and just is injected in being locally heated on the part of place, the back side of wafer 90, thereby reacts.This makes and can utilize etching to remove the film 92c that is coated on the described part.Because described part fully is heated to high temperature by the part, etching speed can be improved satisfactorily.

And, utilize aspirator, rest on the gas that is performed around the etched part and can be inhaled into suction ports 30c, and discharge by suction path 30d.Therefore, reactant gas of handling by quick removal and the byproduct that is caused by etching in the neighboring area that is performed etched part can improve etching speed.And, can also prevent that gas from flowing to the front of wafer 90.

And, utilizing aspirator, the reactant gases of handling etc. can the direction along labyrinth seal 60 be guided from the neighboring area of the peripheral part of wafer 90, and the gap that forms by labyrinth seal 60 is sucked and discharges.Can also prevent reliably that described reactant gas from radially inwardly flowing from labyrinth seal 60.

With aforesaid operations concurrently, platform 10 is driven in rotation mechanism rotation.By so doing, the removal scope that is coated in the film 92c on the peripheral part at the back side of wafer 90 can be along circumferential development, thereby can remove film 92c on the peripheral part that is coated in the back side from whole periphery.

By using the labyrinth seal 60 between platform 10 and the framework 50, platform 10 can not have any frictionally steadily rotation with framework 50.

Utilize heating operation to handle, the heat that is heated part of wafer 90 is transmitted to the part that radially is positioned at wafer 90 inboards sometimes.By the contact surface between wafer 90 and the platform 10, described heat is sent to platform 10, and the water that is charged in the cooling medium chamber 41 absorbs.This makes the temperature of the part that is heated the part inboard can suppress to be positioned at wafer 90 increase.Therefore, the film 92 that can suppress to be coated in the interior section of wafer 90 is changed by the quality that heat causes.And, even flow at reactant gas under the situation of center side of upper surface of wafer 90, also can suppress the reaction of itself and film 92.This makes and can prevent to occur on the film 92 damaging, and film 92 can keep good quality reliably.

Because the thermal capacity that the water yield stores in the cooling medium chamber 41 fully greatly and thus is very big, therefore can obtain heat absorption capacity satisfactorily.By the water in supply passageway 41 and drain passageway 42 replacing cooling medium chambers 41, heat absorption capacity can be kept more fully.This makes the increase of part place temperature of the peripheral part can suppress to be positioned at wafer 90 reliably, and film 92 can be prevented from damage reliably.

In the outer end edges of the wafer water temperature from platform 10 outstanding 3mm and cooling medium chamber 41 is under the condition of 50 degrees centigrade, 23.5 degrees centigrade and 5.2 degrees centigrade, use with Fig. 1 in identical device, surface temperature that the inventor has measured wafer and the relation that is heated near the distance on inward direction radially of part from the outer end edges of wafer.The output condition of described laser heater 20 is as follows:

Laser emission optical wavelength: 808nm

Output: 30W

The diameter of the part that is locally heated: 0.6mm

Output density: 100w/mm ²

Oscillation form: continuous wave

The result as shown in Figure 4.Fig. 4 (a) is with the curve of the periphery that is heated part of the outer end edges of wafer (slightly leaving very near position partly) as the initial point of trunnion axis; Fig. 4 (b) is the curve that the very approaching part that is heated part of the outer end edges of wafer is used as the initial point of trunnion axis.Under water temperature is 23.5 degrees centigrade situation as normal temperature, in the part that is heated part near the outer end edges of wafer, utilization is from being heated the heat of part conduction, temperature is risen to about 110 degrees centigrade (Fig. 4 (a)), and in the very approaching part that is heated part, temperature is lifted to about 300 degrees centigrade, and (in being heated part, temperature rises to 600 degrees centigrade or higher degree centigrade (Fig. 4 (b)).Yet in radially inwardly leaving the middle body of 3mm only therefrom, temperature is maintained at 50 or lower degree centigrade.Because above-mentioned characteristic, can confirm: even flow at ozone under the situation of central portion in front of wafer, also be difficult to reaction occur, and can suppress film 92 and be damaged as reactant gas.

And, outer end edges at wafer is given prominence to 3mm from platform 10, and laser output is under the situation of 80W and 100W, by thermography and use with Fig. 1 in identical device, surface temperature that the inventor has also measured wafer and the relation that is heated near the distance on inward direction radially of part from the outer end edges of wafer.All other conditions are as follows:

Wafer diameter: 300mm

The diameter of the part that is locally heated: 1mm

The rotary speed of platform: 3rpm

Water temperature in the cooling medium chamber of platform: 23.5 degrees centigrade.

Therefore, as shown in Figure 5, the surface temperature of locating near part very much that is heated part in the wafer outer end edges is approximately 300 degrees centigrade (being heated about 700 to 800 degrees centigrade of part place), but chip temperature radially inwardly suddenly reduces therefrom, and at inside 3mm part place far away even be lower than 100 degrees centigrade only radially therefrom.Because this specific character, can confirm: suppressed to be coated in the damage of the film on the central portion of wafer.

Next, other embodiments of the invention will be described.Hereinafter among the embodiment of Miao Shuing, when suitable, by label indication identical among the figure, and suitably the time, their description will be omitted corresponding to the parts in the foregoing description.

In the platform shown in Fig. 6 10, utilize horizontal baffle 45, cooling medium chamber is divided into top (stayed surface side) the first Room part 41U and bottom (opposition side opposite with stayed surface) second Room part 41L.The diameter of described dividing plate 45 is less than the internal diameter of the perisporium of platform 10; And therefore, top first 41U of Room portion and the second Room portion space of 41L outside dividing plate 45, bottom are connected to each other.An end that constitutes the pipe of coolant supply passageway 42 is connected to the middle body of dividing plate 45, and coolant supply passageway 42 is connected to top first 41U of Room portion.Similarly, an end that constitutes the pipe of coolant drain passageway 43 is connected to the middle body of the base plate of platform 10, and coolant drain passageway 43 is connected to bottom second 41L of Room portion.

Top first 41U of Room portion and bottom second 41L of Room portion constitute the coolant path as heat dump.

By coolant supply passageway 42, coolant is directed into the middle body of top (stayed surface side) the first Room part 41U, and flows in the mode of diffusion radially outward.Then, coolant moves around the outer end edges of dividing plate 45, enters in the second Room part 41L of bottom (opposition side opposite with stayed surface), and wherein coolant radially inwardly flows in the second Room part 41L, and then, by central coolant drain passageway 43 dischargings.

Because above-mentioned layout, whole 10 can obtain cooling reliably, and therefore, wafer 90 can evenly obtain cooling reliably.Therefore, the film 92 that is coated on the upper surface can be protected reliably.Because thereby coolant at first is guided into the first Room part 41U near a side of wafer 90 near stayed surface 10a, heat absorption efficiency can access better and improve.

In the embodiment of Fig. 6, coolant supply passageway 42 and coolant drain passageway 43 are arranged in parallel.As shown in Figure 7, also acceptable is: coolant supply passageway 42 passes coolant drain passageway 43, so that form the double layered tubular structure.

In the embodiment of Fig. 8, coolant path 46 is provided as the heat sink in the platform 10.Coolant path 46 is helical structures.Coolant supply passageway 42 is connected to the end of the outer circumferential side of spiral coolant path 46, and coolant drain passageway 43 is connected to the end of center side.Because this layout, coolant flow to interior all sides (or inner periphery side) of coolant path 46 spirally from outer circumferential side (or outer circumferential side).Therefore, the side near wafer 90 peripheral parts can access abundant cooling.Therefore, the heat that conducts from peripheral part can be absorbed reliably, and the film 92 that is coated on the upper surface can be protected reliably.

Though do not show in detail that not only the coolant supply passageway 42 of the coolant drain passageway 43 of center side but also outer circumferential side all passes the central shaft 11 of platform 10.Coolant supply passageway 42 for example extends radially outwardly from central shaft 11 sides between the base plate of platform 10 and coolant path 46, and is connected to the end of the outer circumferential side of coolant path 46.

Under the situation that platform 10 is fixed and framework 50 rotates, coolant supply passageway 42 does not need to pass central shaft 11.

Wherein the coolant layout that flows to the center of platform 10 from outer circumferential side is not limited to the helical structure of Fig. 8.For example, the coolant path in the platform shown in Fig. 9 10 comprises: a plurality of annular concentric paths 47; Communication paths 48 with the described a plurality of annular channels 47 that is used to be interconnected.A plurality of communication paths 48 are along circumferentially being provided with equally spacedly between adjacent annular path 47.Single annular channels 47 is arranged on the communication paths 48 of the radial outside between them and the communication paths 48 of radially inner side is arranged to along circumferentially displacement mutually.All a plurality of positions of equal spacings towards each other on the edge, coolant supply passageway 42 is branched, and is connected to the annular channels 47 of outermost.The base end part of coolant drain passageway 43 is connected to central annular path 47.

Because above-mentioned layout, shown in the arrow of Fig. 9, along outside annular channels 47 in circumferential top set with after flowing, coolant is focused at communication paths 48, and flow into next interior annular path 47, at next interior annular path 47, coolant is once more along circumferentially being branched and flowing.In this process of repetition, coolant flows to the center from the outer circumferential side of platform 10.

As under the situation of Fig. 1 etc., the platform 10 shown in Figure 10 (a) and 10 (b) has the hollow inside that is restricted to cooling medium chamber 41.Coolant supply passageway 42 is branched and is connected to along week of the peripheral part of cooling medium chamber 41 position spaced uniformly-spaced towards each other.The coolant drain passageway extends from the middle body of cooling medium chamber 41.Because this layout, coolant is guided the peripheral part of cooling medium chamber 41, and flows to central authorities.Cooling medium chamber 41 has constituted concentric coolant path.

In Fig. 6 to 10, the layout of coolant supply passageway 42 and coolant drain passageway 43 can be put upside down.By doing like this, the coolant stream among the cooling medium chamber 41U of top is directed into the center from outer circumferential side.

In embodiment as shown in figure 11, replace the coolant system, heat absorbing element is used as heat sink.That is, Peltier (Peltier) element as heat sink is loaded in the platform 10.Peltier element Pe is arranged to the upper surface 10a near platform 10, goes up (the upper surface 10a side of platform 10) so that its heat absorbing side is pointed to.Because this layout, the heat of wafer 90 can absorb by the upper plate of platform 10.Can under Peltier element Pe, dispose fan, fin etc. for described 10, to strengthen from the heat radiation of the heat diffusion side of Peltier element Pe.

The heat sink of embodiment described so far is set on the common whole zone of platform 10, and heat is absorbed by the whole stayed surface from substrate.Yet same acceptable is: shown in Figure 12 and 13, heat sink only is set at the peripheral part of platform 10.Annular and separation wall 12 is placed in the platform 10 with one heart.Be divided into outer regions 10Ra and middle section 10Rb by annular and separation wall 12 for described 10.

Coolant supply passageway 42 and coolant drain passageway 43 are connected to the outer regions 10Ra that is positioned at annular and separation wall 12 outsides.Because this layout, the inside of outer regions 10Ra is as cooling medium chamber 41 (heat sink).

On the other hand, the regional 10Rb of week that is positioned at annular and separation wall 12 inside is not as cooling medium chamber, but it is as the non-arranging section of heat sink.

The peripheral part of described wafer 90 radially is projected into the outer regions 10Ra outside of platform 10.The annular section that just is positioned at ledge supports in abutting connection with the outer regions 10Ra of platform 10 and by the outer regions 10Ra of platform 10, and the middle section that is positioned at annular section is in abutting connection with the middle section 10Rb of platform 10 and by the middle section 10Rb support of platform 10.

Because above-mentioned layout, be transmitted to from the heat that is heated part of the peripheral part of wafer 90 and just in time be positioned at the part that is heated part, and there by the outer regions 10Ra absorption of platform 10.On the other hand, can not be absorbed with the irrelevant remainder of the heat conduction at the center of wafer 90 and obtain cooling by heat.This makes can save heat sink.

Embodiment shown in Fig. 6 to 11 can be as the heat sink that only is arranged on the outer regions 10Ra place of platform 10.

As the indication of the solid line among Figure 13, the illumination unit 22 of laser heater is set at wafer 90 tops.Because this layout, the front of the peripheral part of wafer 90 is locally heated, and reactant gas is supplied to the there by the supply nozzle 30N from the reactant gas feeder.By so doing, can remove the unwanted film on the front of peripheral part of wafer 90.Shown in the dotted line of Figure 13, be coated at unwanted film under the situation at the back side of peripheral part of wafer, laser radiation unit 22 preferably is arranged on wafer 90 belows.

As describing in first embodiment, laser radiation unit 22 is provided with focal adjustments mechanism.Use this focal adjustments mechanism can carry out following processing operation.

As shown in figure 14, usually, for example, circumferentially be arranged on a position along the peripheral part of wafer 90 such as the cutting part 93 of recess.Shown in Figure 14 (a), carries out and handle when operating when the size (irradiation range) by setting the exposure spots Ls of illumination unit 22 on wafer 90 is constant, have the not processed possibility (dash area of Figure 14 (a) is indicated processed part) in edge of recess 93.Therefore, shown in Figure 14 (b), when recess 93 is sent to the target location, utilize focal adjustments mechanism, the focus of laser radiation unit 22 departs from the direction of optical axis.Because this layout, exposure spots Ls can become greatly, and laser can hit the edge of recess 93 just.Therefore, shown in Figure 14 (c), the film that is coated on the edge of recess 93 also can be removed reliably.Because energy intensity reduces when exposure spots Ls becomes big, preferably regulate, so that the energy of per unit area will become identical before big with exposure spots Ls by output that increases laser and the rotary speed that reduces wafer.

Through behind the recess 93, the size of exposure spots Ls turns back to its initial size at exposure spots Ls.

Figure 14 has shown that recess 93 wherein is provided as the example of cutting part of the periphery of wafer 90.Yet,,, can remove the film at the edge that is coated in directional plane by carrying out same operation as mentioned above (comprising the energy adjustment operation of per unit area) even under the situation that provides directional plane to replace recess 93.

Shown in Figure 15 and 16, use the focal adjustments mechanism of laser radiation unit 22, can also carry out the adjusting of handling width.

As shown in figure 15, utilize focal adjustments mechanism, focus on usually on the periphery of wafer 90 from the laser L of laser radiation unit 22; And the spot diameter in the irradiation range on wafer 90 is for example under the situation of about 1mm, and the film 92c that is coated on the peripheral part of wafer 90 can be removed with the width of about 1mm.

On the other hand, as shown in figure 16, using identical laser radiation unit 22 will obtain under the situation of the processing width bigger than above-mentioned processing width, by the 22F of focal adjustments mechanism, the focus of laser L departs from farther than wafer 90.By so doing, the exposure spots diameter on the wafer 90 can increase, and can increase the processing width.For example, under the situation of the processing width that will obtain about 3mm, focus is conditioned, thereby the exposure spots diameter on the wafer 90 is about 3mm.In Figure 16, regulate, so that the focus of laser L departs from farther than wafer 90.What can also accept is: laser L is forming focus than wafer 90 more approaching positions, and then, laser L is to wafer 90 expansions.

As shown in figure 17, except that the focal adjustments of laser radiation unit 22,, also can regulate the processing width by the laser radiation unit 22 that radially slides.Utilization radially slides the 22S of mechanism, thereby the radial direction that laser radiation unit 22 can be along the radial direction of platform 10 along wafer 90 is slided subtly.As shown in figure 13, in laser radiation unit 22, laser focuses on the periphery of wafer 90 usually, and the exposure spots radius on wafer 90 for example is set to about 1mm.

For obtaining for example processing width of about 3mm, keep above-mentioned exposure spots radius simultaneously, at first, shown in the solid line of Figure 17, laser radiation unit 22 is positioned along the radial direction of wafer 90, so that exposure spots is left arrival the position of the about 3mm of outward flange of wafer 90.Described processing keeps above-mentioned radial direction to carry out by rotation wafer 90 simultaneously.

When shown in the dotted line of Figure 17, wafer 90 carries out a complete rotation, utilizes slide mechanism 22S, and illumination unit 22 is generally equal to the size (about 1mm) of exposure spots radius by displacement radially outward.In described position, when wafer 90 carries out another complete rotation, handle.

Then, shown in the double dot dash line of Figure 17, after one of wafer 90 complete rotation, utilize slide mechanism 22S, illumination unit 22 further radially outward is shifted is generally equal to the size (about 1mm) of exposure spots radius.In described position, in another complete rotation of carrying out wafer 90, handle.By so doing, handle width and can be 3mm.

Figure 18 (a) and 18 (b) have shown that the vacuum that wherein is equipped with as apparatus for fixing substrate holds the platform 10 of (or sucker, chuck) mechanism.A large amount of adsorption holes 13 is formed in the upper plate of the platform of being made by suitable heat-conducting metal 10 with the state of diffusion.By suction path 14, described adsorption hole 13 is connected to unshowned aspirator such as vacuum pump.The diameter of described adsorption hole 13 is as much as possible little.Because this layout can obtain enough contacts area between platform 10 and the wafer 90.Therefore, can obtain enough heat absorption efficiencies of wafer 90.

Figure 19 (a) and 19 (b) have shown the modification embodiment of vacuum catch mechanism.Replace the adsorption hole of point-like, adsorption tank 15 is formed in the upper surface of platform 10.Adsorption tank 15 comprises: a plurality of annular concentric grooves 16; Connectivity slot 17 with the cannelure 16 that is used to be interconnected.Between every adjacent cannelure 16, connectivity slot 17 edges are circumferentially uniformly-spaced to arrange.The radially outer relatively connectivity slot 17 that single cannelure 16 is arranged between them is offset along week towards each other with relative radially inner connectivity slot 17.The width of cannelure 16 and connectivity slot 17 is as much as possible little.Because this layout can obtain the contact area between platform 10 and the wafer 90 fully, thereby can obtain the heat absorption efficiency of wafer 90 fully.

Figure 20 and 21 has shown the modification embodiment of adsorption tank 15.The connectivity slot 17 of this adsorption tank 15 is along the radial direction straight-line extension of platform 10, from innermost cannelure 16 up to outmost cannelure 16, so that pass across the cannelure 16 that is positioned at the centre position.Along platform 10 circumferentially, connectivity slot 17 is arranged at interval with 90 degree.

As shown in figure 21, annular cooling chamber 41C is formed in the platform 10 as heat sink.Annular cooling chamber 41C is disposed in the part place near the periphery of platform 10, so that annular cooling chamber 41C is concentric with platform 10.Though show, coolant supply passageway 42 circumferentially is connected to a position along annular cooling chamber 41C's, and coolant discharge unit 43 is connected to the opposite sides of 180 degree.

In Figure 18 to 21, catch mechanism is set on the common whole zone of upper surface of platform 10.In the embodiment shown in Figure 22 and 23, catch mechanism only is set at the perimeter region of the upper surface of platform 10.

Annular projection 10b is formed on the upper surface of outer circumferential side of platform 10.Corresponding to this, the shallow recess 10c that has loop configuration in the vertical view is formed on the middle body of platform 10.

A plurality of (for example, 3) cannelure 16 is formed in the flat upper surfaces of annular projection 10b of platform 10 with one heart.

As under the situation of above-mentioned Figure 19, annular cooling chamber 41C is limited in the platform 10.

According to this 10, the back side of the upper surface contact wafer 90 of the annular projection 10b of outer circumferential side and adsorb wafer 90 only.Because the middle body of platform 10 is provided with recess 10c, middle body is contact wafer 90 not.Because this layout, the contact area between platform 10 and the wafer 90 can be reduced to required minimum value, and reduces to contact the particle (particulate) that causes.

Annular projection 10b can be cooled off by annular cooling chamber 41C.On the other hand, the contact portion of wafer 90 and annular projection 10b is the part of radiation exposed part inboard that just is positioned at the jut of wafer 90 peripheries.Therefore, when the heat that is produced by laser irradiation is tending towards when the radiation exposed part of the jut of wafer 90 peripheries is transferred to the inboard, heat is absorbed immediately by annular projection 10b, can't propagate on the middle body of wafer 90.This feasible abundant function that can obtain as the heat sink of platform 10.

The inventor has checked the contact area between wafer and the platform and has produced relation between the particle.Used wafer with 300mm diameter.Wafer be adsorbed to have with Figure 20 and 21 in the platform (678.2cm of same structure ²Contact area) after, calculate number of particles with 0.2 micron or larger diameter.Calculated number is about 22000.On the other hand, wafer be adsorbed to have with Figure 22 and 23 in the platform (392.7cm of same structure ²Contact area) after, calculate number of particles with 0.2 micron or larger diameter.Calculated number is about 5400.Thus clearly:, can reduce the number of the particle that produces greatly by reducing contact area.

At the equipment of the peripheral part that is used for treatment substrate shown in Figure 24, plasma spray mouth 30 is fixed to the base plate 51 of framework 50, leaves target part and parallel with the laser radiation unit 22 of laser heater 20 so that plasma spray mouth 30 is positioned.The distal face of plasma spray mouth 30 is vertical to be pointed to.The reactant gas path 52b that extends from the distal openings 30b ' of plasma spray mouth 30 is formed on the perisporium 52 of framework 50.The far-end of reactant gas path 52b arrives the interior perimeter surface of perisporium 52, and is connected with little columnar injection nozzle 36 there.

Injection nozzle 36 has constituted injection tip and has formed parts, and injection tip forms the inside formation injection tip 36a of parts.Injection nozzle 36 is for example by such as polytetrafluoroethylene (PFA)) transparent light transmissive material make.

Injection nozzle 36 tilts to extend upward, so as outstanding from the inner rim of perisporium 52, and its distal portion promptly is placed on the dorsal part of the outstanding peripheral part of the wafer 90 on the platform 10 extremely near the dorsal part of the outstanding peripheral part that is placed on the wafer 90 on the P of target location.Because this layout; the irradiation direction of the blow-off direction that blows out nozzle 36 and laser heater 20 on vertical sensing the on the back side of protected peripheral part intersects (in the rear side of the extensional surface of stayed surface 10a, pharoid and injection tip are arranged with different directions from each other (acute angle direction) with respect to target location P) with acute angle.

With plasma spray mouth 30, comprise the element that the framework 50 of reactant gas path 52b and injection nozzle 36 is " reactant gas feeder ".

According to said structure, because injection nozzle 36 is disposed in extremely the position near the target location of wafer 90, the reactant gas such as ozone that ejects by injection nozzle 36 can arrive the target location reliably, gas still is in its activated state simultaneously, and still be in high density, and can not be spread.Therefore, can be improved with the reaction efficiency of film 92c, and can increase etching speed.And, because the jet direction of reactant gas is not parallel with the back side of wafer 90, but angled, can be able to further raising with the reaction efficiency of film 92c, and further increases etching speed.

On the other hand, in fact, blow out nozzle 36 and be arranged to its and advance along light path from the laser L of laser heater 20.Yet because injection nozzle 36 has light transmission features, laser L can not be blocked.Therefore, the target location can be heated reliably, and can obtain high etching speed.

Also acceptable is: injection nozzle 36 is arranged to the light path that departs from laser L.Under the sort of situation, need not to form injection nozzle 36 by light transmissive material.Instead, injection nozzle 36 for example can be formed by stainless steel.Yet, consider because of the reflected temperature of laser increase easily and the concentration of ozone because the fact of thermal response reduction, injection nozzle 36 is preferably formed by the teflon (registered trade mark) with less irradiation heat absorption characteristic and high ozone resistant property etc.

In Figure 24, stage portion is formed on the upper surface of perisporium 52 of base plate.The cross section is down that L shaped annular upper portion perisporium 53 covers on the described stage portion.The inner end edge of top perisporium 53 is disposed near the injection nozzle 36, thereby and is disposed near the outer end edges of the wafer 90 that is placed on the platform 10.Be formed on the inner end edge of top perisporium 53 along the cannelure 53c (suction ports) that circumferentially on whole periphery, extends of top perisporium 53, thereby cannelure 53c is with the mode opening towards the inner end edge expansion.Suction path 53d extends to the periphery of top perisporium 53, and is connected to suction connector 57 from the trench bottom that is positioned at the peripheral position identical with injection nozzle 36 in cannelure 53c.And suction path 53d is connected to unshowned suction (or suction)/discharger.Because this layout, the reactant gas of handling can be inhaled into, and from the discharge on every side of the peripheral part of wafer 90.

Groove 53c, suction path 53d and suction/discharger constitutes " blowing out near the aspirator of port " or " annular space aspirator ".

At the equipment of the peripheral part that is used for treatment substrate shown in Figure 25, the structure of plasma spray mouth is different from the structure of aforesaid plasma spray mouth.That is, the plasma spray mouth 30X of Figure 25 has the loop configuration corresponding to platform 10 or framework 50 sizes, and is arranged in the upside of platform 10 and framework 50 with one heart.Plasma spray mouth 30X can in a large number away from the withdrawn position (this state is not shown) on the top of platform 10 and framework 50 and wherein plasma spray mouth 30X be placed on raised and decline between the desired location (Figure 25 has shown this state) on the perisporium 52 of framework 50 by unshowned elevating mechanism.When plasma spray mouth 30X was raised to withdrawn position, wafer 90 was placed on the platform 10.After this, plasma spray mouth 30X is lowered by and carries out the desired location of handling.

The electrode 31X that has double tubular structure on whole periphery, 32X are contained in plasma spray mouth 30X inside.Internal electrode 31X is connected with unshowned clock, and outer electrode 32X is grounded.Utilize electrode 31X, the surface of facing of 32X, annular narrow space 30ax is formed on the whole periphery of plasma spray mouth 30X.Imported the inter-electrode space 30ax on the whole periphery of upper end (upstream extremity) equably from the processing gas such as oxygen of unshowned processing gas supply source, and in inter-electrode space 30ax by ionizations such as normal pressure glow discharges, so that produce reactant gas such as ozone.As in the situation of utilizing above-mentioned plasma spray mouth 30, the solid dielectric layer is applied to electrode 31X, at least one in the surface of facing of 32X.

Reactant gas path 30bx ' is formed on the bottom of plasma spray mouth 30X.Bottom (downstream) diagonally extending of space 30ax between this reactant gas path 30bx ' self-electrode.On the other hand, vertically extending reactant gas path 52b also is formed in the perisporium 52 of framework 50, and when being set in the desired location with convenient plasma nozzle head 30X, reactant gas path 30xb ', 52b are connected to plasma spray mouth 30X.

The base end part of the nozzle of being made up of light transmissive material (light transmitting material) 36 is connected to the bottom (downstream) of the reactant gas path 52b of framework 50.Injection nozzle 36 embeds in the perisporium 52 with its horizontal attitude along the radial direction of framework 50, and distal portion is allowed to from the internal end surface of perisporium 52 outstanding.Because this layout, injection nozzle 36 is arranged in extremely the position near the rear side of the peripheral part that is installed in the wafer 90 on target location P or the platform 10.With the same number of injection nozzles 36 in laser radiation unit 22 along circumferentially being spaced apart layout, and be arranged in the peripheral position identical with the laser radiation unit 22 of laser heater 20 with man-to-man relation.Because this layout, in the 30ax of internal electrode space, provide reactive processing gas to pass reaction path 30bx ', 32b, and eject by injection nozzle 36.The reactant gas that so ejects impacts the film 92c by laser heater 20 localized heating, and removes film by etching.Even under the light path of laser L and injection nozzle 36 situation interfering with each other, because injection nozzle 36 has light transmission features, as under the situation of the embodiment of Figure 24, laser L can not be blocked yet.

Bezel ring, 37 be disposed in plasma spray mouth 30X the bottom radially to the interior section place.When plasma spray mouth 30X was positioned at desired location, suction ports 30cx was formed between the top of interior perimeter surface of perisporium 52 of the tapered outer ends face of bezel ring, 37 and framework 50.Suction ports 30cx just is positioned at the outer end edges top of the wafer 90 that is placed on the platform 10.The suction path 30dx of the inner terminal by being connected to suction/discharger, suction ports 30cx is connected to unshowned suction/discharger.Because this layout, the gas of handling can be aspirated and discharge around the peripheral part of wafer 90.

Suction ports 30cx, suction path 30dx and suction/discharger constitutes " near the aspirator injection tip " or " annular space aspirator ".

Bezel ring, 37 constitutes suction ports and forms parts.

The equipment of the peripheral part that is used for treatment substrate shown in Figure 26 comprises the integral body of equipment of the peripheral part that is used for treatment substrate shown in Figure 24 and the combination of annular plasma spray mouth 30X.Therefore, in the device of Figure 26, two class plasma spray mouths 30,30X is separately positioned on downside and upside.As under the situation of previous embodiment, bottom plasma spray mouth 30 is used to remove the film 92c on the peripheral part that is coated in wafer 90 back sides.In contrast, top plasma spray mouth 30X is used to remove the film 92 (referring to Fig. 3) on the outer face that is coated in wafer 90 fronts.For this purpose, injection tip 30bx is formed on the bottom of plasma spray mouth 30X of the equipment of the peripheral part that is used for treatment substrate shown in Figure 26.Different with the equipment of the peripheral part that is used for treatment substrate shown in Figure 25, injection tip 30bx is from the downward straight-line extension of inter-electrode space 30ax, and leads to lower surface.Injection tip 30bx has the loop configuration of circumferentially extending along plasma spray mouth 30X on whole periphery.When plasma spray mouth 30X was set to desired location, injection tip 30bx just was positioned at the periphery port top of the substrate that is placed on the platform 10.Reactant gas from inter-electrode space 30ax ejects vertically downward by injection tip 30bx, and is injected in the peripheral part in wafer 90 fronts.Part reactant gas circulation is to the outer face of wafer 90.This makes and can utilize etching to remove peripheral part and the film on the outer face 92 that is coated in wafer 90 fronts.Because injection tip 30bx has the loop configuration of extending above the whole periphery of the periphery of wafer 90, reactant gas can once be injected in the whole periphery (or on every side) of wafer 90 peripheries.Also acceptable is: be used for upper and lower plasma spray mouth 30X, the composition of 30 processing gas can be according to the kind of the film on the front and back that is coated in wafer 90 and difference.

Injection tip 30bx is disposed in central authorities along the Width of suction ports 30cx.All sides and outer circumferential side in suction ports 30cx is divided into, injection tip 30bx are set between interior all sides and the outer circumferential side.Suction path 30dx extends from interior all side aspiration end oral areas and outer circumferential side aspiration end oral area respectively, and is connected to unshowned suction/discharger.

At the equipment of the peripheral part that is used for treatment substrate shown in Figure 27, plasma head 30 is different with the arrangement relation of the device shown in Fig. 1 with laser radiation unit 22.That is, in device shown in Figure 27, plasma spray mouth 30 is fixed to the base plate 51 of framework 50, just points to thereby distal surface just points to injection tip 30b.Injection tip 30b is arranged near being placed on the downside of the outer peripheral edges of the wafer 90 on the platform 10, and ejects reactant gas (passing on target location P and the line perpendicular to the extensional surface of stayed surface 10a) along the direction vertical with the peripheral part at the back side of wafer 90.

As amplifying shown in Figure 28ly, flat total reflection parts 25 are placed on part places injection tip 30b, platform 10 sides of the distal surface of plasma spray mouth 30.Surface at total reflection parts 25, relative with platform 10 sides opposite sides tilts towards platform 10 side direction.This inclined surface is with acting on the total reflection surface 25a that reflects fully such as the light of laser.

On the other hand, laser cell 22 is fixed to the perisporium 52 of framework 50, so that laser radiation unit 22 radially outward leaves plasma spray mouth 30, and the axis of unit 22 is by horizontal positioned, so that the laser irradiation direction is by radially to interior orientation.Hit reflecting surface 25a from the laser L of laser radiation unit 22 irradiation, wherein laser L is upwards reflected to hit the peripheral part at wafer 90 back sides.Because this layout, the peripheral part at described wafer 90 back sides can be locally heated.

Parts 34 grades of the upper end of plasma spray mouth 30 can be made up of light transmissive material, so that allow laser L to see through.

At the laser from laser radiation unit 22 is not linear but under the situation of the taper that reflecting surface 25a converges, also acceptable is: plasma spray mouth 30 is lowered by to leave wafer 90, and the part of the distance that the thickness increase of completely reflecting mirror 25 equals to reduce is not so that laser can disturb plasma spray mouth 30.

As shown in figure 27, framework 50 is provided with the cover 80 of ring-type along the entire circumference of inner rim in the upper end of perisporium 52.Cover 80 comprises: have the structure of horizontal plate-like and the horizontal component 81 that extends radially inwardly from perisporium 52; The tubular hanging portion 82 that hangs from above downwards with entire circumference from the inner end edge of horizontal component 81.The cross section of cover 80 has L shaped structure.Utilize unshowned elevating mechanism, cover 80 can the withdrawn position on the top of spaced apart perisporium 52 (this state is not shown) widely and wherein the outer surface of horizontal component 81 rise and descend between near the desired location (this state is shown in Figure 27) of the interior perimeter surface of perisporium 52.When wafer 90 is placed on the platform 10 and from begining a theatrical performance 10 when removing, cover 80 is sent to withdrawn position, and when wafer 90 was just processed, cover 80 was sent to desired location.

In desired location, the horizontal component 81 of cover 80 and the inner end edge of hanging portion 82 are positioned at the peripheral part top of target location P or wafer 90, and by cooperating with the peripheral part of wafer 90, cover 80 covers the top of annular space 50a.The space 50b that is connected with annular space 50a one is formed between cover 80 and the perisporium 52.The position of the bottom of hanging portion 82 is a little more than wafer 90, so that the gap 82a (Figure 28) that forms between hanging portion 82 and the wafer 90 is reduced greatly.Because this layout, behind the peripheral part that hits wafer 90, the reactant gas of handling can be limited in space 50a reliably, among the 50b, and is prevented from flowing to the central portion side of the upper surface of wafer 90.Therefore, can prevent to be coated in the damage of the film on the upper surface.Suction connectors 55 by cover 80 etc., the space 50b that forms between cover 80 and perisporium 52 is connected to unshowned suction/discharger.Because this layout, the gas of the processing in the space 50a, 50b can be sucked and discharge.

Suction connector 55 and suction/discharger constitute " annular space aspirator ".

At the equipment of the peripheral part that is used for treatment substrate shown in Figure 29, replace the plasma spray mouth 30 of the normal pressure glow discharge type in the previous embodiment, 30X, ozone generator 70 are used as the reactant gas supply source of reactant gas feeder.The system that being used to of using in the ozone generator generates ozone can be any kind such as silent discharge, surface discharge etc.Ozone generator 70 is to install with framework 50 isolated modes.Ozone supply pipe 71 extends from ozone generator 70.By being arranged on the supply connector 72 at base plate 51 places, described base plate 51 is positioned at the radially outer of the laser radiation unit 22 of framework 50, and ozone supply pipe 71 is connected to the reactant gas supply passageway 52b of the perisporium 52 of framework 50.The supply connector 72 of identical with the number of laser radiation unit 22 (for example, 5) is along circumferentially equally spaced being arranged, and is arranged in the peripheral position identical with laser heater 22 with man-to-man relation.Ozone supply pipe 71 is branched and is connected to each and supplies with connector 72.Reactant gas path 52b supplies with connector 72 from each and extends.

Reactant gas path 52b arrives the interior perimeter surface of perisporium 52, and printing opacity injection nozzle 36 tilts outstanding from interior perimeter surface; And as under the situation of device shown in Figure 24, the distal site of injection nozzle 36 is in the position near the rear side of the outstanding peripheral part that is placed on wafer 90 on the platform 10 extremely.

Ozone generator 70, ozone supply pipe 71, supply connector 72, the framework 50 that comprises reactant gas supply passageway 52b and injection nozzle 36 are as the element of " reactant gas feeder ".

By ozone generator 70 produce as the ozone of reactant gas in proper order through ozone supply pipe 71, supply with connector 72 and reactant gas path 52b, and by injection nozzle 36 ejections.Because injection nozzle 36 is disposed in extremely in the position near the peripheral part at the back side of wafer 90, ozone can hit the peripheral part at the back side of wafer 90 reliably, so that remove film 92c effectively before ozone is spread and loses activity; And in the situation that injection nozzle 36 and the light path of the laser L that sends from laser heater 20 are disturbed, as under the situation of device shown in Figure 6, laser L can see through injection nozzle 36, and the target of wafer 90 part can be heated reliably.Similarly, as under the situation shown in Fig. 1 to 24, the gas of handling is through the emission path such as aspirator, promptly be positioned at suction path and suction connector 57 near the injection nozzle 36, suck and discharging perhaps such as the gap of another emission path and the labyrinth seal 60 of space 50a, and by unshowned suction/discharger.

Cover 80 is disposed in top perisporium 53 tops.As utilizing under the situation of device shown in Figure 27, cover 80 can be risen and decline between withdrawn position that makes progress (by the indication of the dotted line among Figure 29) and desired location (by the solid line indication of Figure 29) by unshowned elevating mechanism.Be arranged in the upper surface of the cover 80 of desired location, and the footpath is inwardly extended in abutting connection with top perisporium 53.The hanging portion 82 of the inner end of cover 80 is positioned at the outer peripheral edges top of platform 10.Because this layout, cover 80 only covers annular space 50a.As under the situation of utilizing 27 shown devices, this makes and can prevent the flow of ozone the handled central side to the upper surface of wafer 90.

At the equipment of the peripheral part that is used for treatment substrate shown in Figure 30, replace the laser heater 20 of previous embodiment, used infrared heater 120.As Figure 30 and shown in Figure 31, infrared heater 120 comprises: comprise the light source such as the infrared lamp 121 of Halogen lamp LED; With as irradiator, be used for optical system 122 with ethod of remittance exposure beam.Infrared heater 120 has the loop configuration of circumferentially extending at whole periphery along framework 50.That is, infrared lamp 121 is the annular light sources that circumferentially extend on entire circumference along framework 50, and optical system 122 also along the circumferential arrangement of framework 50 at whole periphery.Wherein, optical system 122 comprises: such as the collecting system of paraboloidal reflector, convex lens and cylindrical lens; Wavelength extracting said elements such as bandpass optical filter.And focal adjustments mechanism is loaded in the optical system 122.Optical system 122 is designed to pass bandpass optical filter from the infrared ray of infrared lamp 121, by the cohesion of paraboloidal reflector and lens, and converges to the entire circumference of periphery at the back side of wafer 90.Because this layout, the film 92c that is coated in the peripheral part at the back side can disposablely be locally heated on entire circumference.Infrared lamp 121 used herein can be far infrared lamp or near infrared lamp.Emission wavelength is for example from 760nm to 10000nm.Wherein, with the light that is fit to of the absorbing wavelength of film 92c coupling by the bandpass optical filter selective extraction.By doing like this, the efficiency of heating surface of film 92c can be further improved.

Lamp cooling channel 125 is in entire circumference is formed on infrared heater 120.By behind coolant through path 126 and the coolant to path 127, lamp cooling channel 125 is connected with unshowned coolant supply source.Because this layout can be cooled off infrared heater 120.The example of coolant (or cooling agent, cold-producing medium) can comprise water, air, helium etc.Be used as at empty G﹠W under the situation of coolant, they can be discharged, and they need not be turned back to the coolant supply source from the back to path 127.This coolant supply source that is used to cool off heater can be jointly with the coolant supply source of the heat that acts on absorptive substrate.

The lamp cooling channel 125, through path 126, the back that are used to cool off heater constitute " pharoid cooling device " to path and coolant supply source.

As the reactant gas supply source of reactant gas feeder, ozone generator 70 is used in the device shown in Figure 29.By ozone supply pipe 71, ozone generator 70 is connected to a plurality of supply connectors 72 of framework 50.The number of supplying with connector is bigger, for example is 8.These are supplied with connector 72 and equally spaced arrange on circumferentially along the top of the outer surface of perisporium 52.

The top of perisporium 52 is set up as spraying path and injection tip and forms parts.That is, being connected to those reactant gas paths 73 of supplying with connector 72 circumferentially is formed on entire circumference in the top of perisporium 52 with circular pattern with the radially inside also edge of horizontal attitude.Reactant gas path 73 leads to the entire circumference of the inner rim of perisporium 52, and the opening portion of reactant gas path 73 is as annular spray port 74.The height of injection tip 74 is a little less than the upper surface of platform 10, will be placed on the back side of the wafer 90 on the upper surface of platform 10 thereby be lower than.Injection tip 74 is disposed near the outer peripheral edges of wafer 90, so that surround whole periphery.

Be guided each position of reactant gas path 73 from the ozone of ozone generator 70, each is supplied with connector 72 and is connected to reactant gas path 73 in described each position, and radially inwardly ejected by entire circumference then, simultaneously circumferentially on entire circumference, expanding along reactant gas path 73 from injection tip 74.Because this layout, ozone can once be injected in the whole periphery of peripheral part at the back side of wafer 90, and the film 92c that is coated on the whole periphery can be removed therefrom effectively.

In device shown in Figure 30, as mentioned above because the whole periphery of wafer 90 can disposablely be handled, and platform 10 does not need rotation, but platform 10 preferably rotate, so that execution is along circumferential uniform treatment.

In device shown in Figure 30, when cover 80 was set at desired location, suction path 53d was formed on the upper surface and the whole periphery between the cover 80 of perisporium 52.By being arranged on the suction connector 57 on the cap 80, suction path 53d is connected to unshowned suction/discharger.Because this layout, the gas of handling can be sucked, and from the periphery discharge of the peripheral part of wafer 90.

Outer end edges at wafer is given prominence to 3mm from platform 10, and the water temperatures in the cooling medium chamber 41 are under the situation of 5 degrees centigrade, 20 degrees centigrade and-5 degrees centigrade, use device same as shown in Figure 30, the surface temperature contrast that this inventor has measured wafer is near the distance on inward direction radially that is heated part of the outer end edges of wafer.The output condition of infrared heater 120 is as follows.

Light source: annular Halogen lamp LED

Convergence optical system: paraboloidal reflector

Wavelength of transmitted light: 800 to 2000nm

Output: 200W

Be locally heated the width of part: 2mm

The result shown in figure 32.Confirm: water temperature is under 20 degrees centigrade the situation under normal pressure, because heat conduction, near the temperature that is heated part of the outer end edges of wafer becomes about 80 degrees centigrade (being heated in the part is 400 degrees centigrade or higher), but radially inwardly 9mm or more part are located therefrom, water temperature is maintained at 50 degrees centigrade or lower low temperature, thereby can suppress the damage of film.

As shown in figure 33, the life-span of the oxygen atom base that obtains by ozone decomposition is depended on temperature.Life-span is long enough near 25 degrees centigrade, but is reduced half near 50 degrees centigrade.On the other hand, owing to carried out heating in order to obtain with the reaction of film 92c, the worry that the temperature that exists ozone to spray path is increased.

Consider above-mentionedly, be provided with at the equipment of the peripheral part that is used for treatment substrate shown in Figure 34 and spray path cooling (adjustment) device.Promptly, reactant gas cooling channel 130 is formed on as spraying in the perisporium 52 of framework 50 that path forms parts, and by behind coolant through path 131 and the coolant to path 132, unshowned coolant supply source is connected to reactant gas cooling channel 130, so that can circulating cooling medium.As coolant, use for example water, air, helium etc.Be used as at empty G﹠W under the situation of coolant, coolant can be discharged, and they need not be turned back to the coolant supply source from the back to path 132.Spraying path cooling coolant supply source can be shared with the coolant supply source of the heat that is used for absorptive substrate.By so doing, the ozone that passes reactant gas path 52b can access cooling, and can suppress the reducing of amount of the former subbase of ozone, thereby keeps active.Like this, the efficient that is used to remove film 92c can be enhanced.

At the equipment of the peripheral part that is used for treatment substrate shown in Figure 34, ozone generator same as shown in Figure 29 is used as the reactant gas supply source.Also acceptable is: use the device of plasma spray mouth shown in Figure 24 to be provided with reactant gas cooling channel 130, so that reactant gas path 52b can access cooling.

As the inert gas injecting-unit, inert gas nozzle N is set at the top, center of platform 10, thereby and be set at the top, center that is placed on the wafer on the platform 10, so that the injection tip direction is just in time pointed to down.The upstream extremity of inert gas nozzle N is connected to unshowned inert gas supply source.For example, from the inert gas supply source, be guided inert gas nozzle N as the nitrogen of inert gas, eject by injection tip then.Along the upper surface of wafer 90, the nitrogen that so ejects is radially outward spread from the center with radial manner.In the near future, the gap 82a between near and the cover 80 of the peripheral part of the upper surface of nitrogen arrival wafer 90, and by gap 82a, portion gas is tending towards the dorsal part of circulation to wafer 90.Utilize this nitrogen current, can be prevented from the front side of circulation to substrate around the reactant gas of the processing of the dorsal part of the periphery of wafer 90, thereby and, prevented from reliably to leak out by gap 82a.

When wafer 90 is placed on the platform 10 and when platform 10 was removed, inert gas nozzle N was withdrawn so that do not disturb wafer 90.

At the equipment of the peripheral part that is used for treatment substrate shown in Figure 34, laser heater 20 is used as pharoid.Also acceptable is: as shown in figure 35, replace laser heater 20, also can use infrared heater 120.As under the situation of device shown in Figure 30, infrared heater 120 extends the whole periphery that spreads all over framework 50 with circular pattern.

At the equipment of the peripheral part that is used for treatment substrate shown in Figure 36, be disposed between the laser radiation unit 22 and labyrinth seal 60 of base plate 51 from the supply connector 72 of ozone generator 70.Be connected to supply connector 72 as the tube-shaped sputtering nozzle 75 that sprays path formation parts.Injection nozzle 75 extends upward from supplying with connector 72 straight lines.Injection nozzle 75 is also crooked near dividing in abutting connection with the bottom of the circumferential surface of platform 10.Then, injection nozzle 75 tilts to extend upward along the taper perimeter side surface of platform 10.The distal openings of injection nozzle 75 is as injection tip, and be positioned at platform 10 perimeter side surface top edge near.Injection tip is faced the peripheral part at the back side that is placed on the wafer 90 on the platform 10, so that ozone can spray to film 92c by injection tip.

According to said structure, by coolant being conveyed into the cooling medium chamber 41 that is limited in the platform 10, not only wafer 90 can be absorbed heat and be cooled off, and injection nozzle 75 also can access cooling.This makes that the substrate heat dump also can be as nozzle passage cooling (adjustment) device.Therefore, owing to need not to realize the reduction of cost as forming reactant gas cooling channel 130 etc. among Figure 34.

Preferably, reduce material such as the friction of grease and be applied to the perimeter side surface of platform 10 or the outer surface of injection nozzle 75, so that reduce the friction that the rotation by platform 10 causes.

At the equipment of the peripheral part that is used for treatment substrate shown in Figure 37, stage portion 12 is formed on the whole periphery of peripheral part of upper surface of platform 10.Because this layout, when wafer 90 is placed on the platform 10, recess (pneumatic reservoir) 12a is formed between stage portion 12 and the wafer 90.Recess 12a extends the whole periphery that spreads all over platform 10 and radially outward opens wide.The degree of depth for example about 3 to 5mm along the radial direction of recess 12a.

The ozone that ejects by injection nozzle 36 flows into recess, i.e. pneumatic reservoir 12a, and temporarily be kept at here.Because this layout, can obtain ozone and be coated in enough reaction time between the film 92c on the peripheral part at the back side of wafer 90, and can improve treatment effeciency.

At the equipment of the peripheral part that is used for treatment substrate shown in Figure 38, shell En radially is arranged on the outside of the peripheral part of platform 10.Substrate patchhole 10a be formed on shell En in interior all sidewalls of platform 10.By substrate patchhole 10a, the outstanding peripheral part that is placed on the wafer 90 on the platform 10 is inserted into shell En.The distal portion of plasma spray mouth 30 is passed the outer peripheral sidewall of shell En, thereby the reactant gas injection tip is disposed in the shell En.On the other hand, for example, the laser radiation unit 22 of laser heater 20 is spaced apart to turn up the soil as pharoid and is arranged in below the shell En, i.e. the outside of shell En.

Shell En is for example by forming such as the light transmissive material of quartz, borosilicate glass and transparent resin.Because this layout, pass the base plate of shell En from the laser L of laser radiation unit 22, and by irradiation partly to the peripheral part at the back side of wafer 90.Thus, the peripheral part at the back side of described wafer 90 can be heated by local irradiation.On the other hand, the injected shell En of going into of the reactant gas such as oxygen base and ozone that produces by plasma spray mouth 30, and hit the part that is locally heated, can be removed reliably so that be coated in the film 92c that is locally heated on the part.Because the setting of shell En, the reactant gas of handling can be prevented from being leaked to the outside.Then, the reactant gas of handling is inhaled into the suction ports of plasma spray mouth 30 and the suction ports by plasma spray mouth 30 is discharged from.

Acceptable is: the base plate of facing the shell En of illumination unit 22 at least is made up of light transmissive material.

Figure 39 has shown another embodiment of the optical system of pharoid.As the optical system that is used for output light straight-line transmitting is passed to the peripheral part of wafer 90, fiber optic cables 23 (waveguide) are connected to the light source 21 of laser heater 20 alternatively.Fiber optic cables 23 are by the Shu Zucheng of a large amount of optical fiber.The bundle of optical fiber extends from lasing light emitter 21, and along a plurality of direction branch to form a plurality of branch cable 23a.Each branch cable 23a can be made up of single fiber, or by the Shu Zucheng of many optical fiber.The distal portion of those branch cables 23a extends to the peripheral part of platform 10, and circumferentially equally spaced arranging along platform 10.The distal portion of every branch cable 23a arranges in the mode that is directed upwards towards, so as it perpendicular to and in the face of be in just in time target location P or be placed on the wafer 90 on the platform 10 the back side peripheral part near below wafer 90.Plasma spray mouth 30 is by horizontal positioned, so that it is with the distal portion of man-to-man relation corresponding to each branch cable 23a.Though not shown, the distal portion of every branch cable 23a is provided preferably with laser radiation unit 22.

According to said structure, by fiber optic cables 23, the laser that comes self-excitation light source 21 is not had diffusely the peripheral part transmission towards the back side of wafer 90.And laser is transferred to different positions by branch cable 23a on every side in the mode that distributes.Then, laser is from the upwards output of distal surface of each branch cable 23a.This make can near it with the peripheral part of laser irradiation to the back side of wafer 90.Point-like laser from single point source of light 21 can be along a plurality of points of circumferentially being irradiated onto of wafer 90.This makes and can remove film simultaneously by heating these points.

And, can freely set up the position of arranging light source 21.Can easily carry out the distribution of optical fiber.

Also acceptable is: such as the far-end that optics is disposed in branch cable 23a that converges of lens pillar, so that the light of output is converged.Also acceptable is: a plurality of light sources 21 are provided, and every fiber optic cables 23 of drawing from each light source 21 are extensible to predetermined peripheral position.Between the distal portion of optical fiber and injection tip, can there be multiple arrangement relation.An example is: the distal portion of optical fiber is tilted placement with respect to wafer 90, and the injection tip of plasma spray mouth 30 is under wafer 90.Certainly, replace plasma spray mouth 30, can use ozone generator 70, and replace lasing light emitter 21, can use infrared lamp.

Figure 40 has shown that the injection tip of the injection nozzle 36 of the device shown in Figure 24 etc. forms the modification embodiment of parts.Shown in Figure 40 (a), form part as rotating stream (diverted flow), a plurality of (for example 4) poroid rotation guide hole 36b is along circumferentially being formed on equally spacedly in the perisporium of injection nozzle 36x.Rotation guide hole 36b is along the cardinal principle tangential direction in the interior week of nozzle 36X, and promptly the interior perimeter surface of injection tip 36a is extended, and is allowed to pass the perisporium of nozzle 36X to interior perimeter surface from outer surface.And, shown in Figure 40 (b), when from the outer surface of the perisporium of nozzle 36X during, rotate guide hole 36b and tilt along the distal direction of nozzle 36X to interior perimeter surface (that is, radially inside).Each outer circumferential side end of rotating guide hole 36b is connected to injection path 52b, and interior all side ends are connected to injection tip 36a.Therefore, rotation guide hole 36b constitutes the communication paths between the upstream side passage portion of spraying path 52b and injection tip 36a or injection tip.

According to this injection nozzle 36X, the reactant gas that ejects from nozzle path 52b by inclination enters injection tip 36a, can form along the rotation stream (diverted flow) of the interior perimeter surface of injection nozzle 36a.Because this layout, reactant gas can be supplied with equably.And because after the poroid rotation guide hole 36 of process, reactant gas ejects by bigger injection tip 36a, the pressure loss can make reactant gas more even.The rotation of reactant gas stream effectively ejects by nozzle 36X so uniformly, and hits the peripheral part at the back side of wafer 90, removes operation thereby carry out film in the mode that is fit to.

At the equipment of the peripheral part that is used for treatment substrate shown in Figure 41 and 42, handle 100 sidepieces that are set at platform 10.This device mainly is designed for the film at the back side of removing the peripheral part that is coated in wafer 90.Handle 100 and be arranged to the upper surface that is lower than platform 10.The film on the front side of the peripheral part that is coated in wafer 90 with main removed situation under, handling 100 can be by turned upside down simply, and is arranged as under the sort of situation and is higher than platform 10.

Handle 100 and be provided with injection nozzle 75 and suction/discharge nozzle 76.

Ozone supply pipe 71 extends from the ozone generator 70 as the reactant gas supply source, and this ozone supply pipe 71 is connected to the bottom of injection nozzle 75 by handling a connector 72 of 100.Injection nozzle 75 is arranged to and is lower than target location (being placed on the peripheral part of the wafer 90 on the platform 10).The jet rod L75 of the distal portion of injection nozzle 75 extends along circumferential (tangential direction) of the periphery of wafer 90 usually, and towards platform 10 slight inclination, i.e. radially inclination to wafer 90 in vertical view.In front view (Figure 42), jet rod L75 is inclined upwardly towards wafer 90.The injection tip of the far-end of injection nozzle 75 is in the face of target location P neighbouring (back side of the peripheral part of wafer 90).

Preferably, at least the distal portion of injection nozzle 75 by forming such as for example light transmissive material of printing opacity teflon (registered trade mark), pylex (registered trade mark) glass, quartz glass etc.

The connector that is connected to suction/discharge nozzle 76 is set at the sidepiece relative with the connector 72 of the ejection side of handling head.Discharge pipe 78 extends from connector 77, and discharge pipe 78 is connected to the discharger 79 that comprises excavationg pump etc.

Suction/discharge nozzle 76 is arranged to and is lower than target location P (being placed on the peripheral part of the wafer 90 on the platform 10).In vertical view (Figure 41), the sucker rod of the distal portion of suction/discharge nozzle 76 (or soup stick) L76 is substantially directly towards the tangential direction of the periphery of wafer 90.At front view (Figure 42), sucker rod L76 is inclined upwardly towards wafer 90.The suction ports of the far-end of discharge nozzle 76 be positioned at much at one height of the injection tip of injection nozzle 75 (the back side of wafer 90 just below).

As shown in figure 41, in vertical view, the distal portion of the distal portion of injection nozzle 75 and discharge nozzle 76 is arranged to along circumferential (tangential direction) of the periphery of wafer 90 (radially being arranged on the imaginary annular surface C outside the upper surface of platform 10) toward each other, and target location P is between them.Target location P is disposed between the suction ports of far-end of the injection tip of far-end of injection nozzle 75 and discharge nozzle 76.Injection nozzle 75 is arranged in upstream side along the direction of rotation (for example, clockwise direction in vertical view) of wafer 90 thus along platform 10.Similarly, suction/discharge nozzle 76 is set at the downstream.Consider the reaction temperature of the film 92c that to remove, the rotary speed of platform 10, laser heater 20 add heat etc., the distance between the suction ports of the injection tip of injection nozzle 75 and suction/discharge nozzle 76 for example is based upon in several millimeters to tens millimeters the scope suitably.

Photoresist with removed situation under, it is in 150 degrees centigrade or the more scope that interval between the suction ports of the injection tip of injection nozzle 75 and suction/discharge nozzle 76 is based upon wherein the treatment temperature of wafer, preferably for example at 5mm in the scope of 40mm.

The diameter of the suction ports of discharge nozzle 76 is bigger than the diameter of the injection tip of injection nozzle 75, for example about 2-5 times.For example, the diameter of injection tip is about 1 to 3mm, and the diameter of suction ports is about 2 to 15mm simultaneously.

As shown in figure 42, as pharoid, the laser radiation unit 22 of laser heater 20 is set at handles an office, following side of 100.Laser radiation unit 22 is set to lower than nozzle 75,76, and as shown in figure 41, in vertical view, is disposed on the injection nozzle between the distal portion of 75 distal portion and discharge nozzle 76.Target location P is positioned in directly over the laser radiation unit 22.

According to said structure, by fiber optic cables 23, the laser that comes self-excitation light source 21 from laser radiation unit 55 with ethod of remittance irradiation forward.Because this layout, the back side of the peripheral part of described wafer 90 is locally heated.Along direction of rotation side shifting downstream, the short time keeps high temperature to this part that is locally heated simultaneously according to the rotation of platform 10.Therefore, the temperature of the peripheral part of wafer 90 not only directly over laser radiation unit 22 located height by irradiation part (target location P) and also at the part place temperature height that is positioned at the downstream therefrom along direction of rotation.Certainly, the target illuminated portion P temperature that is positioned at directly over the laser radiation unit 22 is the highest, and temperature reduces towards the downstream along direction of rotation therefrom.The Temperature Distribution that has shown wafer 90 by the curve T of double dot dash line indication.High-temperature area distribution surrounding target illuminated portion P is partial to downstream (this irradiated heat operation also is described with reference to the embodiment of Figure 43 and 46) along direction of rotation.

Rotate concurrently with LASER HEATING and platform, the ozone gas sequential flow of ozone generator 70 ejects by injection nozzle 75 along jet rod L75 then through supply pipe 71, connector 72 and injection nozzle 75.This ozone is injected near the target illuminated portion (target location P) at the back side of outer surface of wafer 90 the periphery.Because jet rod L75 has angle upwards, ozone gas can hit wafer 90 reliably.Similarly, because the given radially inner angle of jet rod L75, ozone gas is sprayed in wafer 90 a little.Because this layout, can prevent reliably that ozone from flowing to the front side from the outer face of wafer 90 around.Behind the back side of hitting wafer 90, ozone gas almost flows to discharge nozzle 76 along the tangent line short time in the target illuminated portion of the periphery of wafer 90, and can not leave the back side of wafer 90.Because this layout, can obtain ozone and be coated in enough reaction time between the film 92c at the back side of wafer 90.

Ozone gas stream moves along the offset direction of Temperature Distribution.Therefore, soon, not only at target illuminated portion P place, and the part place on the discharge nozzle 76 that is positioned at target illuminated portion P downstream, ozone gas can produce reaction with film 92c after injection.Therefore, can improve treatment effeciency.

Simultaneously, aspirator 79 activated.By doing like this, ozone of handling and reaction by-product can be introduced into the suction ports of discharge nozzle 76, so that be sucked therefrom and discharge, can't be spread.Because suction ports is bigger than injection tip, the ozone gas of handling etc. can positively be hunted down and suck, and the ozone gas of handling etc. can positively be prevented to spread.Therefore, ozone gas etc. can be prevented from circulation reliably to the front side of wafer 90 (positive side), and preceding side form 92 can be prevented from the damage of characteristic changing for example or similar type reliably.And the byproduct of reaction can be removed around the impact point of wafer 90 apace.

As by shown in the arrow curve, the direction of rotation of platform 10 is along 76 normal direction (along the direction of the ozone gas stream) orientation from injection tip 75 to suction nozzle.

Figure 43 and Figure 44 have shown the modification embodiment of the embodiment of Figure 41 and 42.

The processing 100 of equipment that is used for the peripheral part of treatment substrate is provided with the nozzle holding member 75H that is used to keep injection nozzle 75.Nozzle holding member 75H is made by the material such as aluminium with very good heat transfer characteristics.Cooling channel 130 is formed in the nozzle holding member 75H, and is allowed to pass through cooling channel 130 such as the coolant of water.Because this layout, injection nozzle 75 can access cooling thereby holding member 75H can access cooling.

In vertical view, the position of laser radiation unit 22 is set at the pars intermedia office between the distal portion of the distal portion of injection nozzle 75 and suction nozzle 76.And they are set at the side towards injection nozzle 75.

Injection nozzle 75 and suction/discharge nozzle 76 be all removable turns up the soil to be connected to and handles 100.Because this layout, structure can be changed as required and be optimal structure.

When ozone supply, coolant passes the cooling channel 130 of nozzle holding member 75H.By so doing, injection nozzle 75 can be cooled by nozzle holding member 75H, thereby the ozone gas by injection nozzle 75 can be cooled.Because this layout, the quantity of oxygen atom base can be prevented from reducing, and activity can keep very high.Therefore, by making ozone gas and film 92c reaction can carry out etching reliably.

With ozone supply concurrently, laser heater 20 is opened, so as laser L from illumination unit 22 to directly over the emission.Shown in the upward view of Figure 45 (b), this laser is irradiated onto the minimum region R s at wafer 90 back sides in the mode of point-like.This region R s is between the suction ports of the injection tip of injection nozzle 75 and suction nozzle 76, and is and consistent through path with ozone gas.This region R s is heated by local irradiation and the instantaneous high temperature that reaches such as hundreds of degree centigrade.By ozone is contacted with the region R s with high temperature, reaction can be modified and can improve treatment effeciency.

Thereby according to the rotation of platform 10 rotation according to wafer 90, local irradiation heating region Rs is shifted in proper order.That is, the only instantaneous irradiated heat region R s that is positioned at of each point at the back side of wafer 90 peripheries, and pass through this zone rapidly.Therefore, the irradiated heat time period is moment.For example, the diameter of supposing wafer 90 is 200mm, and rotary speed is 1rpm, and the diameter of irradiation zone Rs is 3mm, only about 0.3 second of irradiated heat time period.

On the other hand, in case be heated, heat keeps very short time there when each point at the back side of wafer 90 peripheries, though at each point through behind this zone.Therefore, the temperature of each point still very high (referring to the surface temperature distribution chart of Figure 46).During this high temperature period, each point is passing through in the path of the ozone gas between injection nozzle 75 and suction nozzle 76 still, and ozone still keeps being in contact with it.Because this characteristic, treatment effeciency can get a greater increase.

And because irradiation zone Rs is departed to injection nozzle 75 sides, when each point contacted with ozone, each of the back side of wafer 90 peripheries put and is heated rapidly.After this, this short time keeps high temperature, even after it moves away from irradiated heat region R s.At the time durations of each some maintenance high temperature, point is held with ozone and contacts.Because this characteristic, treatment effeciency can get a greater increase.

On the other hand, the part that is positioned at the peripheral part inboard of wafer 90 is not directly accepted the irradiation heat from laser heater 20.And this specific part is by heat absorption, and by the cooling of the coolants in the platform 10.Therefore, even the heat of irradiated heat region R s should be sent to specific part, can suppress temperature increases, and therefore, can keep low-temperature condition reliably.This makes and can prevent from reliably should not occur damaging on the removed film 92, and can keep splendid film quality.

Figure 46 (a) has shown the particular moment when the peripheral part at the back side at the rotation wafer is by the local laser irradiated heat, the Temperature Distribution of front wafer surface; And Figure 46 (b) has shown the peripheral position at the single measurement result contrast back side of temperature.Laser output is 100W, and rotary speed is 1rpm.The diameter of irradiation zone Rs is about 3mm.Be positioned at position 0 on the periphery of wafer 90 of Figure 46 (a) corresponding to the initial point of the transverse axis of Figure 46 (b).The transverse axis of Figure 46 (b) shown relevant from the position 0 distance, each point of the peripheral part at the back side of wafer.In Figure 46 (a) and 46 (b), irradiation zone Rs and the region R o that comprises region R s have corresponding relation.Region R o is corresponding to the length D between injection nozzle and the suction nozzle (referring to Figure 45 (b)) part.

As from Figure 46 (b) clearly, even in the zone before entering irradiation zone Rs, because this zone is very little, owing to the heat conduction from irradiation zone Rs, temperature becomes 150 degrees centigrade or higher.In irradiation zone Rs, temperature rises at once, and shows 350 degrees centigrade to 790 degrees centigrade Temperature Distribution.In the zone of irradiation zone Rs and then, temperature descends, but short-term still remains on 150 degrees centigrade or higher level.That is, keep being enough to remove the high temperature of organic substance.From clearly aforementioned: rotation is very effective with combining for removing organic substance of irradiated heat.

And then the regional extent of the maintenance high temperature of irradiation zone Rs depends on the rotary speed of laser output and platform.Distance D between injection nozzle and the suction nozzle (width of region R o) can be set up according to this.

In order to reduce the temperature of irradiation zone Rs, laser output is reduced, and the rotary speed of platform is increased.As a comparison, in order to improve temperature, laser output is increased and the rotary speed of platform is reduced.

Be arranged in the processing of the equipment of the peripheral part that is used for treatment substrate shown in Figure 47 and 48 100 and be higher than the wafer 90 that is placed on the platform 10.Injection nozzle 75 and suction/discharge nozzle 76 also are set to be higher than wafer 90.As under the situation of Figure 41 to 44, in vertical view, those nozzles 75,76 are arranged relative to one another that along circumferentially (near the tangential direction the P of target location) of wafer 90 target location P is arranged between the nozzle 75,76 usually.

The illumination unit 22 of laser heater 20 is disposed in directly over the P of target location, and attitude is that direction is pointed to down.By target location P, the laser axis of radiating element 22 extends along the normal vertical with wafer 90, and focus is fixed to target location P.

Be irradiated onto the target location P in front of the peripheral part of wafer 90 from the laser of illumination unit 22, and the film of front side (positive side) that is coated in target location P is by irradiated heat.Meanwhile, come out, and then, be ejected into by injection nozzle 75 on the front of periphery of wafer 90 from the ozone of ozone generator 70 is injected.Then, almost the tangential direction along wafer 90 is mobile near the P of target location for ozone.Because this layout, the unwanted film that is coated on the front side of periphery of wafer 90 can be removed.

Gas stream on the wafer 90 is along the direction of rotation of wafer 90, and the high-temperature area that the edge is caused by amount of residual heat will forms direction (Figure 46 (a)).Because this layout, treatment effeciency can be improved.

Because the absorption of suction nozzle 76 and the rotation of wafer 90, the gas of handling (comprising the reaction by-product such as particle) are retained as along it and are ejected flow direction constantly, and are inhaled into suction nozzle 76 under the sort of situation, are discharged from then.Because this layout can prevent that particle is deposited on the periphery of wafer 90.Because suction nozzle 76 has the hole bigger than injection nozzle 75, the leakage of the gas of handling can be inhibited.

Figure 49 has shown the modification embodiment of the layout of suction nozzle.

At vertical view, suction nozzle 76 is from the radius outside of platform 10, thus from the radius outside of wafer 90 towards the radius internal placement, so that vertical with injection nozzle 75.The position of the suction ports of the far-end of suction nozzle 76 is arranged to the injection tip that leaves injection nozzle 75 along the normal direction of the placement direction of wafer 90 slightly.Thereby the position on the above-below direction of the far-end of suction nozzle 76 is disposed in the upper surface height place much at one with upper surface with the wafer 90 of platform 10.

According to said structure, can deliver to the radius outside fast from the top of wafer 90 by the gas (comprising reaction by-product) that injection nozzle 75 ejects, reacts and handled such as particle, then, be inhaled into suction nozzle 76 and be discharged from.Like this, can prevent that particle is deposited on the wafer 90.

In the structure of the suction nozzle shown in Figure 50, suction nozzle 76 be arranged to be lower than be placed on the platform 10 and be in the directed attitude that makes progress wafer 90 peripheral part extremely near part.The position of the suction ports of the far-end of suction nozzle 76 is arranged to the injection tip that leaves the far-end of injection nozzle 75 along the normal direction of the direction of rotation of wafer 90 slightly.

Because this structure, the arrow indication shown in Figure 51, the gas that ejects by injection tip 76 flows to lower surface along the outer face of the upper surface of the peripheral part of wafer 90.During this process, gas and the unwanted film 92c reaction that is coated on the outer face of wafer 90, and the film 92c that is coated on the outer face can be removed reliably.The gas of handling (comprising the reaction by-product such as particle) is inhaled into bottom suction nozzle 76 and is discharged from.

At the equipment of the peripheral part that is used for treatment substrate shown in Figure 52 and 53, illumination unit 22 is arranged to higher than wafer 90, and is in from the radius outside lateral attitude towards the peripheral part (target location P) of wafer 90.For example about 45 degree in the angle of inclination of illumination unit 22.Shown in Figure 54,, and aim at the normal in the front of the film of just locating at crossing point (or traverse point) from intersecting of the peripheral part of the exposure light axis L20 (central axis of laser beam) of illumination unit 22 and wafer 90 to the top sloping portion.Perhaps optical axis L20 usually with just aim at Width at the crossing point place.Illumination unit 22 is provided with convergence optical system, and convergence optical system comprises: convex lens; Cylindrical lens etc., and be constructed to by optical fiber 23 will from the laser L of light source 21 with the ethod of remittance according to the crossing point (radiation exposed point) of the optical axis 20 of the upper angled part of the peripheral part of wafer 90.

Shown in Figure 54,, dip down from the top of the peripheral part of wafer and radius outside tiltedly according to the peripheral part of wafer 90 and converged gradually with the angles of about 45 degree from the laser of illumination unit 22 according to above-mentioned structure.Then, laser be irradiated onto wafer 90 peripheral part to the top sloping portion.Laser axis L20 is usually perpendicular to radiation exposed point, and forms the incidence angle of about 0 degree.Because this layout, the efficiency of heating surface can be improved, and the peripheral part of the wafer 90 around radiation exposed point can and be heated to high temperature reliably by the part.Ozone from injection nozzle 75 contacts with this part that is locally heated.By so doing, shown in Figure 55, film 92c can effectively be removed with high etching speed.

Shown in Figure 54, the inventor has carried out being used for the ethod of remittance with the angles of 45 degree from inclined upper the experiment of local laser irradiation to the peripheral part of wafer.The rotary speed of described wafer is 50rpm, and laser output is 130W.The surface temperature of the vertical outer face of described wafer utilizes thermography to measure.In with the position under the radiation exposed point, measurement result is 235.06 degrees centigrade.

Similarly, become 30 degree by making the laser irradiation angle with respect to vertical direction, and make all other conditions identical, carry out another experiment with the situation of above-mentioned 45 degree.With the position under the radiation exposed point, measurement result is 209.23 degrees centigrade.

From The above results, clearly: can obtain fully big etching speed.

The inventor has also carried out comparative experiments.Laser from the peripheral part of wafer just above irradiation.Identical such as all other conditions of the rotary speed of wafer and laser output and above-mentioned experiment.The vertical outer face temperature of described wafer is 114.34 degrees centigrade.This temperature is lower than etched ascending temperature.Such reason can be considered: from directly over the laser radiation vertical outer face that can directly not hit wafer of (from directions) with respect to 90 degree of wafer.And also clearly: if the inclination of irradiation direction diagonal angle is 45 degree shown in Figure 54, can make heating-up temperature almost is the twices of 90 degree.

Acceptable is: the peripheral part of the directed wafer 90 of angle that laser irradiation axis L20 has a down dip from the outside towards wafer 90 radiuses.The tilt angled down of this laser irradiation axis L20 can be poured in the scope at diagonal angle down, and tiltable becomes level up to it.Having a down dip at laser irradiation axis L20 becomes under the situation of level up to it, from the positive side of wafer 90, the outer face of hitting wafer 90 from the laser vertical of illumination unit 22.This incidence angle is almost nil.Because this layout, the film 92c that applies on the outer face of wafer 90 can be heated more reliably, and can further improve etching speed.

The inventor has carried out the heating experiment, wherein shown in Figure 56, illumination unit 22 levels are fallen down, mode the peripheral part from positive next door irradiation to wafer of laser to converge, and all other conditions identical (rotary speed of wafer: 50rpm, laser output: 130W) with the experiment of Figure 54.Then, measure the surface temperature of the vertical outer face of wafer.Measurement result is 256.36 degree Celsius.Thus clearly: by the positive side from wafer, with the vertical outer face of laser irradiation to wafer, temperature can increase biglyyer, and can carry out processing at faster speed.

Shown in Figure 57, also be formed on the dorsal part (downside) of the peripheral part of wafer easily all around to the mode of the dorsal part of the peripheral part of wafer with circulation (to flowing) such as the organic membrane 92 of fluorocarbon.Under the situation of the film that applies on the back side of all films of the peripheral part that removal is coated in wafer 90, illumination unit 22 can be disposed in lower and in the position of radius outside, so that laser can be from that position by the peripheral part of irradiation to wafer 90 than wafer 90.

Because above-mentioned layout, from the laser of illumination unit 22 with the ethod of remittance from wafer 90 below the position and the radius outer inclination upwards photograph to the peripheral part of wafer 90.For example about 45 degree of the angle of this laser axis L20.This laser makes to incide the lower tilt part of the peripheral part of wafer 90 near 0 angle of spending.Because this layout, especially, the film 92c that is coated on the back side of all peripheral parts of wafer 90 can be heated to high temperature, and the film 92c that is coated on the dorsal part can be by etching reliably and to remove at a high speed.In handled at this back side, injection nozzle 75 and discharge nozzle 76 also preferably were arranged in the position below the peripheral part of wafer 90.

Shown in Figure 58, can use discretely with the illumination unit of arranging with the attitude that has a down dip 22 perpendicular to the illumination unit 22X of wafer 90.By fiber optic cables 23X, vertical irradiation unit 22X is connected to lasing light emitter 21X, and lasing light emitter 21X separates with the unit that the illumination unit 22 that has a down dip is connected to.Also acceptable is: two branched optical cables are drawn from identical lasing light emitter, and another is connected to the illumination unit 22 that has a down dip so that of branched optical cable is connected to vertical irradiation unit 22X.

According to comprising illumination unit 22, the apparatus structure of 22X is heated to high temperature by the main use illumination unit 22 that has a down dip, and being coated in the sloping portion of periphery of wafer 90 and the film 92c on the outer face can be removed effectively; And mainly use vertical irradiation unit 22X, the film 22c that is coated on the flat surfaces part of periphery of wafer 90 can effectively be removed.Because this layout can be removed the whole unwanted film 92c on the peripheral part that is coated in wafer 90 reliably.

The angle of illumination unit 22 is not limited to fixing angle.Instead, shown in Figure 59, can use variable-angle.The equipment of the peripheral part that is used for treatment substrate shown in Figure 59 is provided with the travel mechanism 30 of illumination unit 22 usefulness.Travel mechanism 30 is provided with slip guide 31.Slip guide 31 has the arcuate structure that extends about 90 circumference degree, about 1/4 from the position at about 12 o'clock to the position at about 3 o'clock.The peripheral part of described wafer 90 (target location P) is disposed in the position corresponding to the center of the arcuate structure of slip guide 31.

Illumination unit 22 is installed on the slip guide 31, thereby illumination unit 22 can be along the circumferential slip of slip guide 31.Because this layout, illumination unit 22 and laser axis L20 point to the peripheral part of wafer 90 always, and can regulate in the angular range of 90 degree the perpendicular attitude position above the peripheral part that is sitting at wafer 90 (wherein illumination unit 22 and laser axis L20 take the perpendicular attitude by the double dot dash line indication of Figure 59) with between the horizontal attitude position on wafer 90 positive next doors (wherein illumination unit 22 and laser axis L20 take the horizontal attitude by the dotted line indication of Figure 59).The motion track of illumination unit 22 and laser axis L20 be disposed in perpendicular to comprise 10 and the vertical plane of the upper surface of the platform 10 of the single radius of wafer 90 and wafer 90 on.Though not shown, travel mechanism 30 is provided with the drive unit that is used for along slip guide 31 mobile illumination unit 22 between perpendicular attitude position and horizontal attitude position.

Shown in the solid line of Figure 59, equipment according to the peripheral part that is used for treatment substrate that disposes this travel mechanism 30, main when processed when the upper angled part of the peripheral part of wafer 90, illumination unit 22 and laser axis L20 are tilted the angles of for example about 45 degree towards the upside of wafer 90.By so doing, the almost heart and its periphery therein, the peripheral part of wafer 90 can be heated to high temperature reliably, and the outer unwanted film 92c that places that is coated in the upper angled part can remove reliably with high etching speed.

Shown in the dotted line of Figure 59, main when processed when the vertical outer face of wafer 90, illumination unit 22 and laser axis L20 drop to wafer 90 positive next doors, go forward side by side into horizontal attitude.By so doing, the outer face of wafer 90 and periphery thereof can mainly be heated to high temperature, and the unwanted film 92c that is coated in the periphery of outer face can be removed reliably with high etching speed.

Shown in the double dot dash line of Figure 59, when the upper planar surface of the periphery of wafer 90 partly with main when processed, illumination unit 22 and laser axis L20 are positioned in directly over the wafer 90, thus they take perpendicular attitude.By so doing, the upper planar surface of the periphery of wafer 90 part and periphery thereof can mainly be heated to high temperature reliably, and the unwanted film 92c that is coated on the periphery of upper planar surface can be removed reliably with high etching speed.

Adopt method as mentioned above, the various piece of the peripheral part of wafer 90 can access effectively and handle.

Shown in Figure 60, when main processing was coated in the film of rear side of peripheral part of wafer 90, the slip guide 31 of travel mechanism 30 can have and extends about 90 arcuate structures degree, quarter turn from the position at about 3 o'clock to the position at about 6 o'clock.Illumination unit 22 and laser axis L20 always point to the peripheral part (target location P) of wafer 90, and illumination unit 22 and laser axis L20 adopt the horizontal attitude position (shown in the dotted line of Figure 60) of horizontal attitudes and wherein illumination unit 22 and laser axis L20 regulate in 90 angular ranges of spending between the peripheral part of wafer 90 is taked the perpendicular attitude position (shown in the double dot dash line of Figure 60) of perpendicular attitude below just on wafer 90 positive next doors therein.

Because above-mentioned layout, shown in the solid line of Figure 60, when the lower tilt of wafer 90 was partly will be main processed, illumination unit 22 and laser axis L20 were tilted, and for example wafer 90 about 45 is spent downwards.Because this layout, the upper angled part and the periphery thereof of the peripheral part of wafer 90 can be heated to high temperature reliably, and the unwanted film 92c that is coated on the upper angled periphery partly can be removed reliably with high etching speed.

Shown in the dotted line of Figure 60, main when processed when the vertical outer face of wafer 90, illumination unit 22 and laser axis L20 drop on wafer 90 positive next doors, and take horizontal attitude.Because this layout, the outer face of wafer 90 and periphery thereof can be heated to high temperature reliably, and the unwanted film 92c that is coated on the periphery of outer face can remove reliably with high etching speed.

Shown in the double dot dash line of Figure 60, when the flat surfaces part of the dorsal part of the periphery of wafer 90 when processed, illumination unit 22 and laser axis L20 are positioned under the wafer 90, thus they take perpendicular attitude.Because this layout, the flat surfaces of the dorsal part of the periphery of wafer 90 and periphery thereof can be heated to high temperature reliably, and the unwanted film 92c that is coated on the periphery of flat surfaces part of dorsal part can be removed reliably with high etching speed ground.

Adopt method as mentioned above, the various piece of the peripheral part of wafer 90 can access effectively and handle.

In Figure 59 and 60, slip guide 31 has the arcuate structure of quarter turn, and the angle of regulation range of illumination unit 22 and laser axis L2 is about 90 degree.Also acceptable is: guide 31 has and extends about 180 circle configurations degree, about 1/2 from the position at about 12 o'clock to the position at about 6 o'clock; And illumination unit 22 and laser axis L20 can carry out angular adjustment from angular ranges below just, 180 degree directly over the peripheral part of wafer 90.

At the equipment of the peripheral part that is used for treatment substrate shown in Figure 61 to 67, handle 100 sidepiece offices that are set at platform 10.Shown in Figure 67, handle 100 and be supported on the device frame (not shown), thus handle 100 can handle therein head to processing position (by the solid line indication of Figure 67) that platform 10 advances and wherein processing 100 leave and advance between the withdrawn position (shown in the dotted line of Figure 67) of platform 10 and recall.

Handle a number of 100 and be not limited to one.Instead, a plurality of processing 100 circumferential compartment of terrain along platform 10 are provided with.

Shown in Figure 61 to 64, handle 100 and comprise head main body 101 and be arranged on the handle spoon type nozzle 160 at head main body 101 places.

Head main body 101 has rectangular structure substantially.Shown in Figure 61 and 62, the top of head main body 101 is provided with the illumination unit 22 of laser heater.

Shown in Figure 61 to 64, the opening 101 of facing platform 10 is formed in the bottom of head main body 101.The irradiation window that forms in the lower end of illumination unit 22 is in the face of the top surface of opening 102.

The gas supply passageway 71 of single channel and three tunnel drain passageway 76X, 76Y, 76Z are formed in the lower part wall of head main body 101.

Shown in Figure 62, the cardinal extremity of gas supply passageway 71 (upstream extremity) is connected with ozone generator 70.Shown in Figure 62 and 63, the far-end of gas supply passageway 71 (downstream) extends the inner surface to a side of the opening 102 of head main body 101.

Shown in Figure 62 and 63, in the opening 102 of head main body 101, the aspiration end of the first drain passageway 76X is led to the inner surface of the opposite side of gas supply passageway 71.The height of the aspiration end of drain passageway 76X is a little more than the upper surface of platform 10.Along the direction of rotation (for example, clockwise direction in vertical view) of wafer 90, thereby drain passageway 76X is disposed in the downstream that the downstream of gas supply passageway 71 is arranged in handle spoon type nozzle 160.

Shown in Figure 62, the aspiration end opening of drain passageway 76Y leads to the central portion of lower surface of the opening of head main body 101.Following description, the aspiration end of drain passageway 76Y be disposed in illumination unit 22 and short tube portion 161 under.

Shown in Figure 61 and 64, all the other drain passageway 76Z lead to the inner surface on opening 102 the most inboard of head main body 101.The height of the aspiration end of the drain passageway 76Z almost upper surface with platform 10 is identical.

Those drain passageways 76X, 76Y, the downstream of 76Z is connected to the discharger (not shown) such as excavationg pump.

Handle spoon type nozzle 160 is set at the interior section place of the opening 102 of head main body 101.Shown in Figure 65, handle spoon type nozzle 160 comprises the introducing portion 162 of lacking tube portion 161 and elongated tubular product such with short cylinder shaped structure.Short tube portion 161 and introducing portion 162 are made up of the anti-ozone transparent material such as quartz.

Shown in Figure 62 and 63, introducing portion 162 horizontal-extendings.The base end part of introducing portion 162 embeds head main body 101 and is supported by head main body 101, and is connected to the distal portion of gas supply passageway 71.The inside of introducing portion 162 defines the introducing path 162a that is used to guide ozone (reactant gas).

For example, the external diameter of introducing portion 162 be 1mm to 5mm, and the flow passage sectional area of introducing path 162a is about 0.79mm ²To 19.6mm ²And length is that 20mm is to 35mm.

The distal portion of introducing portion 162 extends into the opening 102 of head main body 101, and weak point tube portion 161 is connected to the extension.

Weak point tube portion 161 also is set at the central portion place of the opening 102 of head main body 101.Weak point tube portion 161 has the tubular construction with cover of lower ending opening, and has the vertical axis of direction.The diameter of weak point tube portion 161 is fully bigger than introducing portion 162.Lack the extension of central axis of the axis of tube portion 161, and aim at the irradiation axle of illumination unit 22 along head main body 101.

For example, the external diameter of short tube portion 161 be 5mm to 20mm, highly be that 10mm is to 20mm.

Cap 163 is wholely set the upper end (cardinal extremity) of weak point tube portion 161 and is fit to closed upper end.Cap 163 is set at below the irradiation window of illumination unit 22, so that relative with irradiation window just.As mentioned above, comprise that the whole short tube portion 161 of cap 163 is made up of the light transmissive material such as quartz glass.Also acceptable is: cap 163 has light transmission features at least.As light transmissive material,, can use such as the general purpose glass of soda-lime glass and resin with high grade of transparency except quartz glass.

The thickness of cap 163 preferably 0.1mm to 3mm.

Introducing portion 162 is connected to the part near the upside of all sidewalls of weak point tube portion 161; And the introducing path 162a that is formed in the introducing portion 162 is communicated with surface, the inside 161a of weak point tube portion 161.The downstream of introducing path 162a is used as the communications ports 160 that is communicated with the inner space 161a of weak point tube portion 161.Thereby the flow passage area of section of the inner space 161a of weak point tube portion 161 is fully bigger than the area of section than communications ports 160a of introducing path 162a.

For example, the flow passage sectional area of communications ports 160a is about 0.79mm ²To 19.6mm ², the flow passage sectional area of lacking the inner space 161a of tube portion 161 simultaneously is 19.6mm ²To 314mm ²

Then, from communications ports 160a, the ozone (reactant gas) of the introducing path 162a that flows through flows into the inner space 161a of weak point tube portion 161, and expanding also temporarily remains on wherein.The inner space 161a of weak point tube portion 161 is as the temporary transient memory space of ozone (reactant gas).

Shown in Figure 61 and 62, the distal lower end opening of weak point tube portion 161.Utilization is positioned at the processing 100 of handling the position, the peripheral part (target location) that is placed on the wafer 90 on the platform 10 be positioned in short tube portion 161 lower edge under, and lack tube portion 161 and cover above the target location.The gap that forms between the lower edge of weak point tube portion 161 and the peripheral part of wafer 90 is very little, for example about 0.5mm.By this minimum gap, the temporary transient memory space 161a that forms in weak point tube portion 161 is in the face of the peripheral part (target location) of wafer 90.

Shown in Figure 63, the weak point tube portion 161 in the processing position outwards expands to the outside of wafer 90 from the external margin slight radial of wafer 90.Because this layout, between the lower edge of the expansion by short tube portion 161 and the outer peripheral edges of wafer 90, the temporary transient memory space 161a and the external communications that in lacking tube portion 161, form.The space that forms between the peripheral part of the lower edge of the expansion of short tube portion 161 and wafer 90 is used as release port 164, is used for discharging the gas that is stored in temporary transient memory space 161a.

To describe the equipment that utilizes being used to of adopting that mode as mentioned above constructs to handle the peripheral part of wafer now, remove the method for the film 92c on the peripheral part at the back side that is coated in wafer 90.

Utilize transfer robot etc., pending wafer 90 is placed on the upper surface of platform 10, so that the axis alignment of the axis of wafer 90 and platform 10 and be stuck (or absorption).Then, handling 100 advances and is set to from withdrawn position and handle the position.Because this layout, shown in Figure 66, the peripheral part of wafer 90 is inserted in the opening 102 that is formed in the head main body 101, and is disposed in the position under the short tube portion 161.

Then, lasing light emitter 21 is unlocked, and laser L in the mode that converges from illumination unit 22 irradiation to the peripheral part that is positioned at the wafer 90 under the illumination unit 22.By so doing, in the mode of point-like (part), the film 92c that is coated on the peripheral part of wafer 90 can be heated by irradiation ground.Though the cap 163 of weak point tube portion 161 is being set in the middle of in light path, because cap 163 has light transmission features, light quantity can be reduced hardly.Therefore, can keep the efficiency of heating surface.

With above-mentioned heating operation concurrently, ozone is sent to gas supply passageway 71 from ozone generator 70.Described ozone is guided the introducing path 162a of the introducing portion 162 of handle spoon type nozzle 160, and is guided the temporary transient memory space 161a that lacks in the tube portion 161 from communications ports 160a.Because temporary transient memory space 161a expands more largo than introducing path 162a and communications ports 160a, ozone is spread in temporary transient memory space 161a, and temporarily is stored in wherein.This makes can increase the time that the part of the peripheral part of ozone contact wafer 90 is heated the position, thereby and, can obtain the sufficient reaction time.By etching, this makes can remove reliably to be coated in once more and is heated locational film 92c, thereby and can improve processing speed.And the utilization rate of ozone can increase fully, can eliminate waste, and can reduce required gas flow.

Weak point tube portion 161 protrudes a little from the outer peripheral edges of wafer 90.The space that forms between the outer peripheral edges of projection and wafer 90 is with acting on the release port 164 that discharges gas from the inside 161a of weak point tube portion 161.Therefore, be temporary transient at the gas of the inside 61a storage of short tube portion 161, and gas and reaction by-product (particle etc.) with processing of the activity of degenerating can be fast released from release port.Therefore, by supply with fresh ozone to temporary transient memory space 161a always, can protect high reaction efficiency.

By regulating three drain passageway 76X, 76Y, the suction of the gas among the 76Z and discharge rate can be leaked control to the gas that discharges by release port 164, and can be carried out gas stream control to the gas after opening 102 internal leakages.Since three drain passageway 76X are provided, 76Y, 76Z, if any, the particle of diffusion can be inhaled into and discharge reliably.

Because platform 10 side by side rotates with said procedure, the film 92c that is coated on the peripheral part of wafer 90 can be removed from whole periphery.And, being installed in the interior section of the peripheral part of the cooling/heat sinks cooling wafer 90 in the platform 10 by utilization, the temperature of interior section that can prevent to accept the wafer 90 of laser irradiation increases.Therefore, the film 92 that can prevent to be coated on the interior section of wafer 90 is damaged.

After removing EO, to handle 100 and recall, platform 10 is disengaged and holds, and wafer 90 is picked up from platform 10.

To shown in 68 (c), be adjusted in the position of the short tube portion 161 that handles the position as Figure 68 (a), and lack tube portion 161 and be conditioned from the protrusion amount of the outer peripheral edges of wafer 90 along the radial direction of platform 10.By so doing, can regulate processing width (dash area of Figure 68 (a) to 68 (c)) with removed film 62c.

The inventor uses the experimental facilities of Figure 69 to carry out the printing opacity experiment of cap 163.Quartz glass plate G is used as cap 163, and and the laser L of laser radiation unit 22 be irradiated onto quartz glass plate G.Laser energy meter device D is placed on the dorsal part of quartz glass plate G, the measured and calculating attenuation coefficient of the laser energy of transmission.What the output of laser radiation unit 22 be switched in, and the laser energy in measuring every grade.Preparation has two quartz glass plate G of different-thickness, and each glass plate G is carried out identical measurement.

The result is as follows.

Table 1

Sheet thickness: 0.12mm

Illumination unit output (watt)	The laser energy of transmission (watt)	Attenuation coefficient (%)
			2.79	2.7	3.23
12.4	12	3.23
			21.6	20.9	3.24
29.5	28.4	3.73

Sheet thickness: 0.12mm

Illumination unit output (watt)	The laser energy of transmission (watt)	Attenuation coefficient (%)
			2.79	2.68	3.94
12.4	12	3.23
			21.6	20.8	3.70
29.5	28.5	3.39

Shown in above-mentioned table 1, do not consider the output of illumination unit 22 and the thickness of glass plate, attenuation factor is less than 4%.

Therefore, clearly: even the cap 163 of handle spoon type nozzle 160 is arranged on medially from the light path that illumination unit 22 extends, 96% or more laser L can be by cap 163 transmission, and can reduce hardly at the heat efficiency of the periphery office of wafer 90.

On the other hand, even the decay of laser energy part can be absorbed in the cap 163 fully, this absorption meeting is less than 4%, and therefore, cap 163 can be heated hardly.And cap 163 can fully be cooled off by the ozone by handle spoon type nozzle 160.Therefore, cap 163 and handle spoon type nozzle 160 can be heated to high temperature hardly, and need to have heat resistance characteristic hardly.

Figure 70 has shown the modification embodiment of handle spoon type nozzle 160.In this revises embodiment, be formed on as the recess 161b of release port in the lower edge of short tube portion 161 of handle spoon type nozzle 160.Shown in Figure 71, along short tube portion 161 circumferentially, recess 161b is disposed in (corresponding to the position outside the radius of wafer 90) on the side relative with the side of facing platform 10.

Recess 161b has semicircular structure, has the radius of about 2mm.The structure of recess 161b and size are not limited to above-mentioned, and they can change as required suitably.

Embodiment according to this modification, the gas and the reaction by-product that temporarily are kept at the processing among the temporary transient memory space 161a can be discharged reliably by recess 161b, fresh ozone can be supplied to temporary transient memory space 161a reliably, and can obtain high reaction coefficient.

Because the weak point tube portion 161 of handle spoon type nozzle 160 itself is provided with release port 161b, protrude from the periphery of wafer 90 by making weak point tube portion 161, no longer need between the periphery of short tube portion 161 and wafer 90, form release port 164.Shown in Figure 68 (c), lacking under tube portion 161 and the wafer 90 its outer edges situation aligned with each other, gas of handling and reaction by-product can flow out temporary transient memory space 161a reliably, and the scope set up with the processing width of removed film 92c is broadened.

Figure 72,73 have shown the modification embodiment of the system that discharges.Discharge nozzle 76XA, 76YA, 76ZA can be set at and handle in 100 the opening 102.Dotted line as Figure 73 is indicated, and almost along the tangential direction that is placed on the wafer 90 on the platform 10, discharge nozzle 76XA extends to the middle body of opening 102 from the drain passageway 76X on the sidepiece of head main body 101.Along the direction of rotation (for example, the clockwise direction in the vertical view) of wafer 90, the distal openings of discharge nozzle 76XA is slightly arranged towards the downstream of weak point tube portion 161 with leaving, so that face the lateral parts of weak point tube portion 161.Discharge nozzle 76XA is slightly higher than wafer 90 and dips down slightly and tiltedly arranges.The distal openings of discharge nozzle 76XA is tilted to down directed.

According to the rotation of wafer 90, the reaction by-product such as particle that is positioned at generation on the wafer 90 under the short tube portion 161 flows to discharge nozzle 76XA.By sucking through discharge nozzle 76XA and discharging those reaction by-products, can prevent reliably that particle is deposited on the wafer 90.

By the indication of the dotted line of Figure 72 and 73, discharge nozzle 76YA extends vertically upward from the drain passageway 76Y of the bottom that is positioned at head main body 101.The far-end of discharge nozzle 76YA (upper end) aperture arrangement is under the lower ending opening of short tube portion 161, so that slightly away from the lower ending opening of short tube portion 161 and face the lower ending opening of weak point tube portion 161.The peripheral part of wafer 90 is inserted between short tube portion 161 and the discharge nozzle 76YA.

Because above-mentioned layout, the reaction by-product such as particle of generation can be adsorbed in the position below the discharge nozzle 76YA and discharge on the wafer 90 that is positioned under the short tube portion 161, and can prevent reliably that particle is deposited on the wafer 90.Side by side, can be controlled to move to the bottom marginal flow from the reactant gas such as ozone of short tube portion 161 from the top edge of the peripheral part of wafer 90.Adopt this mode, reactant gas can not only contact with lower edge with the top edge of wafer 90 but also with the outer end.Because this layout can effectively be removed the whole unwanted film 92c on the peripheral part that is coated in wafer 90.

Shown in the dotted line of Figure 72, discharge nozzle 76ZA radially extends in wafer 90 to the middle body of opening 102 from the drain passageway 76Z at the inner surface of the opening 102 of head main body 101.The distal openings of discharge nozzle 76ZA is disposed in weak point tube portion 161 inboard (the radius outside of wafer 90) and the short tube of sensing portion 161 slightly.The position, upper and lower of discharge nozzle 76ZA is set to the bottom of short tube portion 161 and wafer 90 almost same high.

Because above-mentioned layout, the particle of generation can be delivered to the radius outside from the top of wafer 90 apace on the wafer 90 that is positioned under the short tube portion 161, and be inhaled into and pass through discharge nozzle 76ZA and discharge, and particle can be prevented to be deposited on the wafer 90 reliably.And if any, the particle of diffusion can be inhaled into and discharge reliably.

Three discharge nozzle 76XA, 76YA among the 76ZA, can selectively only use first, selectively uses wherein two, maybe can use whole three.Also acceptable is: wherein two or three are installed in advance, and only have one of them selectively to be used to aspirate and discharge the gas of handling.Two or three are used simultaneously in suction and discharging operation also is the selection that merits attention.

At the equipment of the peripheral part that is used for treatment substrate shown in Figure 74 to 77, replace above-mentioned handle spoon type nozzle 160, used long tube nozzle 170 (tube portion).And, replace having used the introducing portion 179 that forms by anti-ozone resin (for example, PETG) with handle spoon type nozzle 160 all-in-one-pieces, by the introducing portion 162 that quartz is made.Long tube nozzle 170 and introducing portion 179 form discretely.

Shown in Figure 76, as under the situation of handle spoon type nozzle 160, long tube nozzle 170 is made up of anti-ozone transparent material.Long tube nozzle 170 has tubular construction with cover, and described tubular construction with cover has unlimited lower surface and longer than weak point tube portion 161.

For example, long tube nozzle 170 long 40mm are to 80mm, and external diameter 5mm is to 20mm, and the flow passage sectional area of inner space is 19.6mm ²To 314mm ²

Long tube nozzle 170 is arranged on upper end (cardinal extremity) integratedly, and has the transparent cap 173 that is used to close the upper end.Shown in Figure 74 and 75, cap 173 is disposed in below the irradiation window of illumination unit 22, so that relative with irradiation window rightly.Illumination unit 22 is configured to the ethod of remittance by cap 173 laser irradiation to the peripheral part (target location) that is placed on the wafer 90 on the platform 10.

The thickness of cap 173 preferably 0.1mm to 3mm.

Long tube nozzle 170 is disposed in the central portion office of the opening 102 of head main body 101, so that the axis normal orientation.Long tube nozzle 170 is arranged to the peripheral part (target location) that passes the wafer 90 that is placed on the platform 10, and intersects at the peripheral part of mid portion and wafer 90.Recess 174 is formed on all side parts of the intersection (corresponding to the part of target location) between the peripheral part of growing tube nozzle 170 and wafer 90.The circumferential extension of recess 174 edges long tube nozzle 170, and surpass semi-circumference usually.Recess 174 has the vertical thickness bigger slightly than the thickness of wafer 90, so that the peripheral part of wafer 90 can insert wherein.

For example, recess 174 is positioned at the about 10mm in upper end that leaves long tube nozzle 170 position to 30mm in long tube nozzle 170.Recessed 174 thickness (vertical dimension) is about 2mm to 5mm.The center of circle angle of recess 174 is preferably 240 and spends to 330 degree.

Introducing portion 179 is connected to (base end side) top 171 of the recess 174 of long tube nozzle 170.Be formed on the downstream of the introducing path 179a in the introducing portion 179 and the internal communication of upper nozzle part 171, and as communications ports 170a.The inside of the upper nozzle part 171 of long tube nozzle 170 constitutes temporary transient memory space 171a.

When wafer 90 is inserted into recess 174, between the outward flange that is formed on wafer 90 from the release port 175a of the temporary transient memory space 171a in the upper nozzle part 171 and the remainder 175 of growing a nozzle 170 that when recess 174 forms, stays.

The inside of a part long tube nozzle 170, that the position is lower than recess 174 is as the release path that is connected to release port 75a.Shown in Figure 75, drain passageway 76Y is directly connected to the lower end of long tube nozzle 170.

According to this second embodiment, when on the upper surface that processed wafer 90 is placed on platform 10 and handle 100 and advance to when handling the position, the peripheral part of wafer 90 is inserted in the recess 174 of long tube nozzle 170.Because this layout, the inside of long tube nozzle 170 is vertically separated by intervenient wafer 90.The inner space of upper and lower nozzle segment 171,172 communicates with each other by release port 175a.

Then, laser is irradiated onto the peripheral part of wafer 90 from illumination unit 22 in the mode that converges, so that the peripheral part of wafer 90 is locally heated, and be admitted to temporary transient memory space 171a in the upper nozzle part 171 by communications ports 170a from the ozone of ozone generator 70.By so doing, as under the situation of first embodiment, the film 92c that is coated on the peripheral part of wafer 90 can be removed effectively.The gap that forms between the edge of recess 174 and the wafer 90 is very little.And lower nozzle part 172 is discharged from device absorption.Accordingly, can prevent reliably that gas from passing through the minimum clearance leakage between recess 174 and the wafer 90.And, can control reaction effectively.And gas of handling and reaction by-product are forced to flow to lower nozzle part 172 by release port 175a, so that they can be forced to discharge by drain passageway 76Y.If any, the particle of generation can be forced to discharge through drain passageway 76Y.

In some instances, two or more dissimilar films are laminated on the wafer 90.For example, shown in Figure 78 (a), by such as SiO ₂The film 94 formed of inorganic substances be applied on the wafer 90, and be applied on the film 94 by the film of forming such as the organic substance of photoresist 92.Under the sort of situation, the reactant gas feeder of the organic membrane 92 on being used to remove the periphery that is coated in substrate, another reactant gas feeder can be set, be coated in the inoranic membrane 94 on the periphery of substrate with removal.

That is, shown in Figure 79 and 80, the equipment that is used to handle the peripheral part of the substrate that uses two film-stack wafers is provided with single air pressure chamber 2; Single 10; Be used to remove organic membrane the reactant gas supply source first handle 100; Handle 200 (a gas guiding part spare) with second of the reactant gas supply source that is used to remove inoranic membrane.

Utilization is advanced/evacuating mechanism, thus first handle 100 can be along platform 10 and along processing position (shown in the dotted line of Figure 79 and 80) that the outer surface of wafer 90 extends with radially outward leave and advance between the withdrawn position (solid line by Figure 79 and 80 is indicated) of handling the position and recall.

First to handle a structure itself of 100 and the processing shown in Figure 47 and 48 100 identical.

As the double dot dash line among Figure 80 indication, organic membrane is handled 100 and is disposed in than wafer 90 and will be disposed in wherein the higher position of horizontal plane.Also acceptable is: organic membrane is handled 100 and can be arranged in than the wafer 90 by the dotted line indication of Figure 80 and will be disposed in wherein the lower position of horizontal plane.This organic membrane handle 100 have with Figure 41 to the identical structure of the processing shown in 44 grades 100.A pair of organic membrane is handled 100 and can be become vertical relation to arrange with the above-mentioned horizontal plane that is arranged on therebetween.

Be used for second of inoranic membrane and handle 200 circumferentially handling 100 and leave 180 degree and be provided with along platform 10 from organic membrane.

Utilization is advanced/evacuating mechanism, and second handles 200 can advance between processing position (shown in the dotted line of Figure 80) of extending along wafer 90 and the withdrawn position of radially outward leaving wafer 90 (solid line by Figure 80 is indicated) and recall.

Shown in Figure 81, second handles 200 has the cardinal principle bow-shaped structural that extends along the periphery of wafer 90.Shown in Figure 83, insert port 201 and handle 200 inside with cut-in manner towards second and be formed on second and handle a diameter of 200 and reduce in all side surfaces of side.Shown in Figure 81 and 82, insert port 201 and handle 200 circumferentially extends on the whole length along second.The vertical thickness that inserts port 201 is slightly greater than the thickness of wafer 90.Handle 200 advance and recall operation according to second, the peripheral part of described wafer 90 is inserted into and inserts port 201 and remove from inserting port 201.

Shown in Figure 83, insert the inner terminal of port 201 and expanded largely, so that as the second reactant gas guide path 202.Shown in Figure 81, guide path 202 is handled longitudinal direction (circumferentially) extension of 200 along second.In vertical view, guide path 202 has bow-shaped structural, and this bow-shaped structural has the radius radius of curvature much at one with wafer 90.When wafer 90 was inserted in the insertion port 201, the peripheral part of wafer 90 was positioned in the guide path 202.Shown in Figure 83, the cross section structure of guide path 202 is positive circles.Yet, be noted that the cross section structure of guide path 202 is not limited thereto.For example, it can be semicircular structure or square structure.And the flow passage sectional area of guide path 202 can be set to the size that is fit to size.

Inoranic membrane remove reactant gas (second reactant gas) can with such as SiO ₂Inorganic substances reactions.As its initial gas, for example can use such as CF ₄And C ₂F ₆PFC gas and such as CHF ₃The fluoro-gas of HFC.Shown in Figure 82, fluoro-gas is guided as the atmosphere pressure discharging space 261 between the pair of electrodes 261 of the fluorine plasma discharge apparatus 260 in second reactant gas generation source and by plasma, to obtain to comprise second reactant gas such as fluorine-based fluorine-containing spike.The second reactant gas supply passageway 262 extends from atmos plasma discharge space 261a, and the place, an end that handles a guide path 202 of 200 at inoranic membrane is connected to inlet port (injection nozzle) 202a.Drain passageway 263 extends from discharging port (suction nozzle) 202b at the place, the other end of guide path 202.

Inoranic membrane is handled 200 and is made up of anti-fluorine material.

The unwanted film of being made up of organic membrane 92c and inoranic membrane 92c that is coated on the periphery of wafer 90 is removed as follows.

[organic membrane removal step]

At first, carry out the step of removing the organic membrane 92c on the peripheral part that is coated in wafer 90.Handle 100,200 and be retracted into withdrawn position in advance.Then, removed wafer 90 is arranged on the platform 10 with one heart by the aligning guide (not shown).Then, organic membrane is handled 100 and is advanced to and handle the position.By so doing, laser radiation unit 22 is directed to the some P of the periphery of wafer 90, and injection nozzle 75 and suction nozzle 76 are disposed opposite to each other along the tangential direction of wafer 90, and position P between injection nozzle 75 and suction nozzle 76 (referring to Figure 47 and 48).It is directly pre-aligned in withdrawn position that inoranic membrane is handled 200 quilt.

Then, lasing light emitter 21 is opened, so that laser carries out localized heating to the some P of the peripheral part of wafer 90, and removing by organic membrane such as the oxygen radical reaction gas of ozone of producing in ozone generator 70 handled an injection nozzle 75 of 100 and is ejected, and is injected into impact point P with limited manner and goes up (referring to Figure 47 and 48).Because this layout shown in Figure 78 (b), is coated in oxidized reaction of organic membrane 92c and etching (ashing) on the P.By utilizing suction nozzle 76 intake-gas, comprise the ashing organic membrane residue processing gas can be removed fast.

Simultaneously, the part (major part) that is positioned at the peripheral part inboard of wafer 90 is absorbed heat by platform 10 and is cooled off.By so doing, as previously mentioned, can prevent to be coated in the film deterioration under the influence of heating on the part of the peripheral part inboard that is positioned at wafer 90.

Being rotated one for described 10 arrives repeatedly.By so doing, the organic membrane 92c that is coated on the peripheral part of wafer 92 can be removed on whole periphery, and inoranic membrane 94c is exposed on whole periphery.

[inoranic membrane removal step]

Then, carry out the step of removing the inoranic membrane 94c on the peripheral part that is coated in wafer 90.At that time, wafer 90 is held and is arranged on the platform 10.Then, inoranic membrane is handled 200 and is advanced, and the peripheral part of wafer 90 is inserted into and inserts port 201.By so doing, the part with predetermined length of the peripheral part of wafer 90 is guided path 202 and surrounds.By regulating the insertion amount, can easily control width (processing width) with removed film 94c.

Then, be fed into the inter-electrode space 261a of fluorine plasma discharge apparatus 260, and electric field appears at inter-electrode space, so that the Atomospheric pressure glow discharge plasma occurs such as the fluoro-gas of CF4.By so doing, fluoro-gas is by activate, and generates the reactive fluorochemical gas of being made up of fluorine-based etc.By supply passageway 262, reactive fluorochemical gas is guided inoranic membrane and handles a guide path 202 of 200, then, along guide path 202 the peripheral part of wafer 90 circumferentially on flow.By so doing, shown in Figure 78 (c), being coated in inoranic membrane 94c on the peripheral part of wafer 90 can be etched and remove.Side by side, platform 10 rotations.By so doing, it is can be on whole periphery etched and remove to be coated in inoranic membrane 94c on the peripheral part of wafer 90.The gas that comprises the processing of the byproduct that is caused by etching is discharged from through drain passageway 263.Be reduced owing to insert port 201, can prevent that fluoro-gas is diffused into the part of the peripheral part inboard that is positioned at wafer 90.And, by regulating the flow of reactive fluorochemical gas, can prevent the part of gaseous diffusion more reliably to the peripheral part inboard that is positioned at wafer 90.

Before organic membrane was removed step and finished back or inoranic membrane and remove step and begin, organic membrane handles 100 can be retracted into withdrawn position, and perhaps organic membrane is handled 100 and can be removed at inoranic membrane and recall after step finishes.Under the situation that organic membrane 92c can remove by first rotation of platform 10, inoranic membrane can be operated parallel with the organic membrane removal and side by side be removed.When inoranic membrane 94c began partly to expose during organic membrane is removed step, inoranic membrane removes step and organic membrane removal step can side by side be carried out.

At the inoranic membrane composition for example is under the situation of SiN etc., etching produce be at normal temperatures solid state such as (NH ₄) 2SiF ₆And NH ₄The byproduct of FHF.Therefore, acceptable is: organic membrane is handled 100 and is positioned at during inoranic membrane is removed step and handles the position, and carries out laser irradiation to the peripheral part of wafer 90 continuously by laser heater 20.By so doing, can evaporate the byproduct that is in solid state under the normal temperature.And the byproduct of evaporation can be sucked, and discharges by suction nozzle 76.

After inoranic membrane was removed step, 100,200 recalled in withdrawn position, and platform 1 stops the rotation.Then, eliminate the clamping to wafer 90 (or absorption) that causes by holding in the platform 10 (or absorption) mechanism, and wafer 90 is transported.

According to this removal method, during organic membrane was removed step and inoranic membrane and removed step whole, wafer 90 was continued to be arranged on the platform 10.Therefore, when organic membrane removal step is transferred to inoranic membrane removal step, need not wafer 90 is sent to other position, and therefore, can eliminate and transmit the required time.And, can not produce when transmitting wafer 90, wafer 90 unexpectedly contacts the particle that occurs when transmitting box.And, no longer need other alignment function.This makes can reduce the entire process time widely, improves output and realizes high-precision processing.And, can use aligning guide 3 and platform 10 jointly.Therefore, compact dimensions can be simplified and make to the structure of device.By a plurality of processing 100,200 are installed in the single shared chamber 2, device can be handled polytype film.And, also can avoid the problem of cross pollution.Owing to the present invention relates to the normal pressure system, drive division grades and can easily be installed in 2 inside, chamber.

When having on the wafer 90 under the organic membrane 92 and inoranic membrane 94 situations of following sequential cascade with organic membrane 92 and inoranic membrane 94, at first carry out inoranic membrane and remove step, and carry out the removal step of organic membrane then.

Organic membrane handle 100 and the angle of departure handled between 200 of inoranic membrane be not limited to 180 degree, can be for example 120 degree or 90 degree.

Have only when they the time do not interfere with each other at retracted position with when the operation of advancing/recall, organic membrane handle 100 and inoranic membrane handle 200 and just satisfy requirement.Also acceptable is: the processing position is superimposed.

But organic membrane is handled 100 one and is installed in and contains on the oxygen reactant gas generation source, and inoranic membrane is handled 200 and can be installed on the fluorine-containing reactant gas generation source by one.

The inventor uses the second identical processing head (a gas guiding part) shown in Figure 81 to 83 to carry out the etching experiment.As with processed object, 8 inches of diameters have been used and covering SiO on it ₂The wafer of film.CF4 is with dealing with gas.Flow is set to 100cc/min.This processing gas in plasma span 261a by plasma, and used as reactant gas.Then, reactant gas is through the guide path 202 of gas guiding part spare 200.Then, the unwanted film on the whole periphery of the peripheral part of wafer is carried out etching.

Required time is 90 seconds, and the processing gas flow is 150cc.

(comparative example 1)

Example as a comparison, by using the device of wherein having cancelled gas guiding part spare and having gone out with the mode direct injection of point-like from the reactant gas of nozzle, with embodiment 1 the same terms under carry out etching.Required time is 20 minutes, and the processing gas flow is 2 liters.

Therefore, clearly: owing to provide according to gas guiding part spare of the present invention, required time and processing gas flow are greatly reduced.

(comparative example 2)

Used and had the double-ring electrode structure and have processing head corresponding to the size of wafer external diameter; Reactant gas is from injected come out of the whole periphery while of the injection tip of usually identical with the external diameter of the wafer ring-type of diameter; And on the whole periphery of the peripheral part of wafer, carry out etching simultaneously.The flow of handling gas is 4 liters/minute.All other conditions are identical with embodiment's 1.Required time is 30 seconds, and the processing gas flow is 2 liters.

Therefore, according to the present invention, clearly: the simultaneously processed device of required time and whole periphery does not wherein almost change, and and, can reduce to handle the amount of gas greatly.

And, use the example identical and the rotary speed of device and wafer to be set to 50rpm and 300rpm with above-mentioned situation, the inventor has carried out processing separately.Then, measured in the radial direction the radial position of film thickness contrast at wafer.The result is shown in Figure 84.In Figure 84, trunnion axis has shown from the outer end of wafer to the distance of radially inner position.When rotary speed is 50rpm, handle width from the outer end of wafer in the scope of about 1.6mm.As a comparison, when rotary speed is 300rpm, handle width from the outer end of wafer in the scope of about 1.0mm.By clearly aforementioned: the increase of rotary speed is big more, and reactant gas can better be suppressed radially inside direction diffusion, and the processing width can be according to the rotary speed Be Controlled.

Figure 85 shown the device that is used to remove stacked film another revise embodiment.Revise among the embodiment at this, the organic membrane removal contains the oxygen reactant gas and inoranic membrane is removed reactive fluorochemical gas by 270 generations of shared plasma discharge apparatus.Oxygen (O ₂) be used as the initial gas that organic membrane is removed reactant gas.Fluoro-gas such as CF4 is used as the initial gas that inoranic membrane is removed reactant gas.The initial gas supply passageway 273,274 that extends from initial gas body source is separately converged and is extended to the atmosphere pressure discharging space 271a between the pair of electrodes 271 that is formed on common plasma electric discharge device 270. Break valve 273V, 274V is set to initial gas supply passageway 273,274 respectively.

By triple valve 276, the reactant gas supply passageway 275 that extends from common plasma electric discharge device 270 is divided into two paths, promptly contains oxygen reactant gas supply passageway 277 and reactive fluorochemical gas supply passageway 278.Containing oxygen reactant gas supply passageway 277 is connected to organic membrane and handles an injection nozzle 75 of 100.Reactive fluorochemical gas supply passageway 278 is connected to the upstream extremity that inoranic membrane is handled a guide path 202 of 200.

Remove in the step at organic membrane, the break valve 274V of fluorine-containing initial gas supply passageway 274 is closed, and the break valve 273V that contains oxygen initial gas supply passageway 273 simultaneously is opened.By so doing, such as O ₂Initial gas be directed into the discharge space 271a of plasma discharge apparatus 270, and contained the oxygen reactant gas to produce such as oxygen base and ozone by activate.The shared reactant gas supply passageway 275 that extends from plasma discharge apparatus 270 is connected to through triple valve 276 and contains oxygen reactant gas supply passageway 277.Because this layout, be directed into organic membrane and handle in 100 the injection nozzle 75 such as the oxygen reactant gas that contains of ozone, so that can remove organic membrane 92c on the peripheral part that is coated in wafer 90 by ashing.

Remove in the step at inoranic membrane, the break valve 273V that contains oxygen initial gas supply passageway 273 is closed, and the break valve 274V of oxygen initial gas supply passageway 274 is opened simultaneously.By so doing, be guided plasma discharge apparatus 270 and by plasma such as the fluorine-containing initial gas of CF4, so that produce reactive fluorochemical gas such as F*.The shared reactant gas supply passageway 275 that extends from plasma discharge apparatus 270 is connected to reactive fluorochemical gas supply passageway 278 through triple valve 276.Because this layout, be directed into inoranic membrane such as the reactive fluorochemical gas of F* and handle in 200 the guide path 202, and along the circumferential flow of wafer, so that the inoranic membrane 94c that is coated on the peripheral part of wafer 90 can be removed by etching.

Figure 86 has shown the modification example of above-mentioned stacked film removal device.The platform main body 110 (first part) and the swedged center pad 111 (second part) that comprise enlarged diameter according to this platform 10 of revising example.Described main body 110 has littler than the wafer 90 slightly disk-like structure of diameter.Described main body 110 wherein is provided with the heat dump such as cooling medium chamber 41.Hold in the middle body of upper surface that recess 110a is formed on platform main body 110.

Central pad 111 has the diameter disk-like structure more much smaller than platform main body 110.Central pad 111 is arranged coaxially with platform main body 110.

Though do not show that at their upper surface place, platform main body 110 and central pad 111 are respectively equipped with the adsorption tank that is used to adsorb wafer 90.

Be disposed in below the central pad 111 with the coaxial pad axle 112 of platform main body 110 and central pad 111.Central pad 111 is connected to the upper end of pad axle 112 and is supported by the upper end of pad axle 112.Pad axle 112 is connected with pad driver element 113.

Pad driver element 113 is provided with the lifting drive system that is used for 112 oscilaltions of pad axle.Thereby pad axle 112 central pad 111, caused between extrusion position and accommodated position, moving up and down (advance and recall), wherein at extrusion position (Figure 86 (b)) pad axle 112, thereby central pad 111, project upwards from platform main body 110, wherein at accommodated position (Figure 86 (a)), pad axle 112, thereby central pad 111 is accommodated in the holding among the recess 110a of platform main body 110.Also acceptable is: central pad 111 is to fix, and platform main body 110 is connected to pad driver element 113, and central pad 111 under the sort of state by to rising and, so that central pad 111 is outstanding and be received to decline.The upper surface of central pad 111 that is positioned at accommodated position is concordant with the top of platform main body 110.Yet the top of comparable main body 110 of upper surface of central pad 111 that is positioned at accommodated position is low.

Thereby pad driver element 113 is provided with the rotary drive system that is used for rotating pad axle 112 rotation central pad 111.

Though show, platform main body 110 and central pad 111 wherein be respectively equipped be used to hold (absorption) wafer 9 hold (or absorption) mechanism.

The heat sink of cooling chamber 41 grades only is set on the platform main body 110, and is not arranged on the central pad 111.Yet heat sink can also be arranged on the central pad 111.

Inoranic membrane is handled the 200 identical positions of upper level that are positioned in the central pad 111 that is positioned at extrusion position.At described height and position, inoranic membrane handles 200 can be near the processing position (by the dotted line indication of Fig. 1 and 2) of central pad 111 with leave and advance between the withdrawn position (solid line by Fig. 1 and 2 is indicated) of central pad 111 and recall.

Shown in Figure 86 (a), in organic membrane was removed step, cooling device was activated when central pad 111 was arranged in accommodated position, and handled operation and handle 100 by organic membrane and carry out, simultaneously around coaxial line rotating platform main body 110 and central pad 111 integratedly.

Shown in Figure 86 (b), after organic membrane was removed step and finished, organic membrane was handled 100 and is retracted into withdrawn position.Then, central pad 111 is risen so that central pad 111 enters extrusion position by pad driver element 113.By so doing, wafer 90 can be sent to the position higher than platform main body 110.

Then, inoranic membrane is handled 200 and is advanced to from withdrawn position (by the indication of the dotted line Figure 86 (b)) and to handle position (by the indication of the solid line among Figure 86 (b)), and carries out inoranic membrane and remove step.Because platform main body 110 is upwards left in the position of wafer 90, the peripheral part that can prevent platform main body 110 and inoranic membrane are handled a lower part interference of 200.Therefore, can increase wafer 90 along inserting ports 201 in the radial direction the degree of depth.Because this layout can prevent more reliably that second reactant gas is diffused into the inside of wafer 90.

On the other hand, the diameter of platform main body 110 can access abundant increase, and wafer 90 can be cooled off near the peripheral part of wafer 90 reliably by heat sink.Therefore, the film quality that can prevent from more reliably to be coated on the part of peripheral part inboard of wafer 90 damages.

Remove in the step at this inoranic membrane, only have central pad 111 to be rotated.By so doing, by the etching to whole periphery, the inoranic membrane that is coated on the peripheral part of wafer 90 can be removed.

Figure 87 has shown the modification example of the platform structure with central pad.

Annular cooling chamber 41C is formed in the platform main body 110 as heat sink.Annular cooling chamber 41C is configured for wafer 90 is applied the barotropic fluid terminal of cooling.Replace annular cooling chamber 41C, the cooling channel with concentric multiring structure, radial structure, helical structure etc. can be formed in the platform main body 110.

The adsorption tank 15 that is used for adsorbing wafer 90 is formed on the upper surface of platform main body 110.Adsorption tank 15 constitutes the negative pressure fluid terminal that applies suction to wafer 90.

Though not shown, central pad 111 also is provided with at the upper surface place has the adsorption tank that is used to adsorb wafer 90.Pass pad axle 112 from the suction path that adsorption tank extends.

Utilize the lifting drive system of pad driver element 113, central pad 111 is advanced between the projection position of the dotted line indication of Figure 87 and the accommodated position shown in Figure 87 and is recalled (rise or descend).The central pad 111 that is arranged in accommodated position is contained in the recess 110a that is formed on platform main body 110 fully, and the upper surface of central pad 111 is slightly recalled (several millimeters) downwards from the upper surface of platform main body 110.

Pad axle 12 passes the rotating cylinder coaxial with it 150, can rise and descend and can rotate with mat axle 112.

The pith of rotating cylinder 150 has in entire circumference and has uniform thickness and vertically extending tubular construction.The upper end of rotating cylinder 150 is connected and is fixed to platform main body 110.The bottom of rotating cylinder 150 is connected to rotary drive motor 140 (rotating driver) by gear 144, Timing Belt (timing belt) 143, gear 142 and reduction gearing in proper order.Rotating cylinder 150 is by rotary drive motor 140 rotation, thereby and platform main body 110 be rotated.

Rotating cylinder 150 passes bearing B and is supported on by bearing B on the inside of stationary magazine creel 180.

Fixed axis 180 has the vertical tubular construction coaxial with rotating cylinder 150 and pad axle 112.Fixed axis 180 is fixed to device frame F.As long as the cross section of interior at least perimeter surface has circular configuration fixed axis 180 and just can accept.Stationary magazine creel 180 is lower than rotating cylinder 150.The upper end of rotating cylinder 150 is outstanding from stationary magazine creel 180, and platform main body 110 is set at its top.

Rotating cylinder 150 and stationary magazine creel 180 are provided with the annular cooling chamber 41C of platform main body 110 as the cooled flow path of terminal with the suction flow passage of adsorption tank 15 as terminal.

The through path of cooled flow path constitutes as follows.

As Figure 87, shown in 88 and 89 (c), cooling water port one 81a is formed in the outer surface of stationary magazine creel 180.Cool off through path pipe 191 and extend, and be connected to port one 81a from unshowned cooling water supply source.Communication paths 181b extends radially inwardly to stationary magazine creel 180 from port one 81a.

Shown in Figure 89 (c), the annular channels 181c that extends at whole periphery is formed in the interior perimeter surface of stationary magazine creel 180.Communication paths 181b is connected to the single position that makes progress in week of annular channels 181c.

Shown in Figure 87 and 88, annular seal groove 182d is formed on the upside and the downside of annular channels 181c of the interior perimeter surface of stationary magazine creel 180.Shown in Figure 88, annular cooling through path packing ring G1 is contained among each annular seal groove 182d.The cross section of packing ring G1 has U type structure (C type).The opening of packing ring G1 points to annular channels 181c side.Lubricated preferably is applied to the outer surface of packing ring G1.

Shown in Figure 87 and 88, directly vertically extending axial passageway 151a is formed in the rotating cylinder 150.Shown in Figure 88 and 89 (c), the outer surface of rotating cylinder 150 is led in the bottom of axial passageway 151a by communication paths 151b.Communication paths 151b is positioned at the position highly identical with annular channels 181c, and is communicated with annular channels 181c.Though along circumferential transferring position, it keeps the state that is communicated with annular channels 181c to communication paths 151b in the scopes of 360 degree according to the rotation of rotating cylinder 150 always.

Shown in Figure 87, the upper end of axial passageway 151a is connected to external relay pipe 157 by the connector on the outer surface of rotating cylinder 150 154.This relay pipe 157 is connected to annular cooling chamber 41C by the connector on the lower surface of platform main body 110 197.

The back of cooled flow path constitutes as follows to path.

Shown in Figure 87, the lower surface place of stage body 110 is provided with connector 198, and connector 198 is arranged in 180 degree opposite sides of through path 197.The annular cooling chamber 41C of described main body 110 is connected to external relay pipe 158 by connector 198.Relay pipe 158 is connected to the connector 155 on the periphery on the top that is arranged in rotating cylinder 150.

Shown in Figure 87, directly vertically extending axial passageway 152a is formed on the rotating cylinder 150.Shown in Figure 89 (b), axial passageway 152a is disposed in the 180 degree opposite sides of forward direction axle path 151a.The upper end of axial passageway 152a is connected to connector 155.

Shown in Figure 87 and 89 (b), the outer surface of rotating cylinder 150 is led in the bottom of axial passageway 152a by communication paths 152b.Communication paths 152b is disposed in the 180 degree opposite sides of forward direction axle path 151a and the upside of communication paths 151b.Communication paths 152b rotates around central axis with axial passageway 152a according to the rotation of rotating cylinder 150.

The annular channels 182c of groove shape is formed on whole periphery in the interior perimeter surface of rotating cylinder 180.The position of annular channels 182c is higher than forward direction annular channels 181c, but height is identical with communication paths 152b.Annular channels 182c upwards is connected to a point in the week of communication paths 152b.Though along circumferentially shifting, it keeps the state that is communicated with annular channels 182c in the scopes of 360 degree according to the rotation of rotating cylinder 150 in the position of communication paths 152b always.

Shown in Figure 87 and 88, cooling back is formed on the upside and the downside of annular channels 182c of the interior perimeter surface of stationary magazine creel 180 to path annular seal groove 182d.Shown in Figure 88, annular cooling back is contained among each annular seal groove 182d to path packing ring G2.The cross section of packing ring G2 has U-shaped (C shape) structure, and its opening points to annular channels 182c side.Lubricated preferably is applied to the outer surface of packing ring G2.

As Figure 87, shown in 88 and 89 (c), discharge port 182a from annular channels 182c communication paths 182b that extends radially outwardly and the water that is connected to communication paths 182b and be formed on the stationary magazine creel 180.Port one 82a leads to the outer surface of stationary magazine creel 180.Extend from port one 82a to path pipe 192 the cooling back.Communication paths 182b is disposed in the peripheral position identical with port one 81a with forward direction communication paths 181b with port one 82a, but higher than them.

The suction flow passage constitutes as follows.

As Figure 87, shown in 88 and 89 (a), suction ports (absorption port) 183a is formed on the back upside to access port 182a in the outer surface of stationary magazine creel 180.Suction tube (or adsorption tube, suction pipe) 193 extends and is connected to port one 83a from the suction source that comprises unshowned vacuum pump etc.Communication paths 183b extends radially inwardly to stationary magazine creel 180 from port one 83a.

Shown in Figure 89 (a), at whole periphery, the suction annular channels 183c of groove shape is formed in the interior perimeter surface of rotating cylinder 180.Communication paths 183b upwards is connected to single position in the week of annular channels 183c.

Shown in Figure 87 and 88, suction annular seal groove 183d is formed on the upside and the downside of annular channels 183c of the interior perimeter surface of stationary magazine creel 180.Shown in Figure 88, annular suction packing ring G3 is accommodated among each annular seal groove 183d.The cross section of packing ring G3 has and cools off forward direction and back to path packing ring G1, the П shape that G2 is identical (C shape) structure, but the orientation of packing ring G3 and packing ring G1, G2 difference.The opening of packing ring G3 points to the opposite side of annular channels 183c.Lubricated preferably is applied to the outer surface of packing ring G3.

Shown in Figure 87, directly vertically extending suction axial passageway 153a is formed in the rotating cylinder 150.Shown in Figure 89 (a), the outer surface of rotating cylinder 150 is led in the bottom of axial passageway 153a by communication paths 153b.The position of communication paths 153b is highly identical with annular channels 183c, and is communicated with suction annular channels 183c.Though along circumferentially shifting, it keeps the state that is communicated with annular channels 183c in the scopes of 360 degree according to the rotation of rotating cylinder 150 in the position of communication paths 153b always.

Axial passageway 153a and communication paths 153b are disposed in respect to cooling forward direction and the axial passageway 151a of back to path, and 152a is along in the position of circumferential offset 90 degree.

Shown in Figure 87, the upper end of axial passageway 153a is connected to the external relay pipe 159 on the outer surface of rotating cylinder 150 by connector 156.This relay pipe 159 is connected to adsorption tank 15 by the connector on the lower surface of platform main body 110 199.

The device that uses Figure 87 to 89 be will describe now and unwanted film 94c on the periphery that is coated in wafer 90, the operation of 92c will be used to remove.

Processed wafer 90 is picked up and aims at (arranging with one heart) by aligning guide from box by unshowned forked robots arm (manipulator).Behind aligning, wafer 90 is risen and is placed on pre-aligned on the central pad 111 of projection position (by the dotted line indication of Figure 87) by forked robots arm's level.Because the diameter of central pad 111 is fully littler than wafer 90, can obtain forked robots arm's abundant surplus.After wafer 90 was placed on the central pad 111, forked robots arm recalled.The adsorbing mechanism that is used for central pad 111 is activated so that wafer 90 is adsorbed onto central pad 111.

Then, central pad 111 is passed through the lifting drive system of pad driver element 113 to decline, and is concordant with platform 10 up to the upper surface of central pad 111.By so doing, wafer 90 is near the upper surface of platform 10.Then, the absorption of 111 pairs of wafers 90 of central pad is released, and central pad 111 by further to descending several millimeters deliver to accommodated position (solid line by Figure 87 is indicated) so that will fill up 111.Then, suction source such as vacuum pump etc. is activated, so that swabbing pressure sequentially directs into adsorption tank 15 by suction tube 193, port one 83a, communication paths 183b, annular channels 183c, communication paths 153b, axial passageway 153a, connector 156, relay pipe 159 and 199.By so doing, wafer 90 can be adsorbed on the platform 10, and is securely held on it.Then, rotary drive motor 140 is actuated to rotate integratedly rotating cylinder 150 and platform 10, thus rotation wafer 90.By so doing,, always keep the connected state between communication paths 153b and the annular channels 183c though be formed on communication paths 153b in the rotating cylinder 150 along the moving of the annular channels 183c of stationary magazine creel 180 with rotating in a circumferential direction.Therefore, even when rotated, the adsorbed state of wafer 90 also can be maintained.

Shown in the up-sizing among Figure 88, by forming the gap between the interior perimeter surface of the outer surface of rotating cylinder 150 and stationary magazine creel 180, the swabbing pressure of suction flow passage also acts on space between seal groove 183d and the gasket groove G3 from the connected component between communication paths 153b and the annular channels 183c.This swabbing pressure is continued to use in the directive effect of expansion П shape packing ring G3 in the cross section.Therefore, swabbing pressure is big more, and packing ring G3 just is compressed on the interior perimeter surface of seal groove 183d more doughtily, so that sealing load obtains increasing.Because this layout, can prevent the leakage in the gap that forms between the surface, inside of outside by being formed on swing roller 150 and resting barrel 180 reliably.

Almost in the moment that platform 10 begins to rotate, organic membrane is handled 100 and is advanced to from withdrawn position (by the dotted line indication of Fig. 1 and 87) and to handle position (Fig. 1 and 87 solid line indication).Then, from the laser of laser irradiating device 20 with the mode irradiation that converges single position, so that the peripheral part of wafer 90 is locally heated to the peripheral part of wafer 90.Then, come out by injection nozzle 75 is injected, and be heated the position with the part of the periphery of wafer 90 and contact such as the reactant gas of ozone.By so doing, shown in Fig. 5 (b), the organic membrane 92c that is coated on the periphery can be removed effectively by etching.Gas of handling and byproduct are sucked nozzle 76 absorption and discharge.

In the moment that is used to remove organic membrane, cooling water is fed into the annular cooling chamber 41C of platform main body 110.Promptly, order is fed into annular cooling chamber 41C by preceding path pipe 191, port one 81a, communication paths 181b, annular channels 181c, communication paths 151b, axial passageway 151a, connector 154, relay pipe 157 and connector 197 from the cooling water of cooling water supply source.By so doing, the part of the peripheral part inboard of platform main body 110 and position wafer 90 thereon can access cooling.Even the heat that is caused by laser irradiation is guided inner sides of radius from the peripheral part of wafer 90, heat can be absorbed apace.Therefore, the temperature of part that can prevent to be positioned at the peripheral part inboard of wafer 90 increases.Because this layout, can prevent to be coated in the damage of the film 94,92 on the part of peripheral part inboard of wafer 90.

Behind the annular cooling chamber 41C that flows through, cooling water passes through connector 198, relay pipe 158, connector 155, axial passageway 152a, communication paths 152b, annular channels 182c, communication paths 152b, annular channels 182c, communication paths 182b and port one 82a in proper order, is discharged to path pipe 192 by cooling off the back.

Communication paths 151b in the rotating cylinder 150 circumferentially also rotate by the rotation of platform 10 along annular channels 181c's, but no matter position of rotation how, total communication paths 151b keeps and the connected state of annular channels 181c.Similarly, communication paths 152b is also along the rotating in a circumferential direction of annular channels 182c, but the connected state of itself and annular channels 181c always is held.Because this layout, even during the rotation of platform 10, it is mobile that cooling water also keeps.

Shown in up-sizing among Figure 88, the gap that forms between the outer surface by upper and lower rotating cylinder 150 and the interior perimeter surface of stationary magazine creel 180, the cooling water in the cooling through path also flows into annular seal groove 112d from the connected component between communication paths 151b and the annular channels 181c.Cooling water also flows in the opening of packing ring G1 that the cross section has the U-shaped structure.The packing ring G1 pressure extended of water that is cooled, and be compressed against on the interior perimeter surface of seal groove 112d.This makes and can obtain sealing load reliably and prevent the cooling water leakage.Identical operations can obtain in the packing ring G2 of path behind the cooling water.

Utilize at least one rotation of platform, the organic membrane 92c that is coated on the whole periphery of periphery of wafer 90 can be removed.

When the removal EO of organic membrane 92c, gas ejection by injection nozzle 75 and the gas pumping by suction nozzle 76 stop, and organic membrane is handled 100 and is retracted into withdrawn position.

Central pad 111 upwards rises by the lifting drive system of pad driver element 113, so that central pad 111 is used for absorption in abutting connection with the upper surface of wafer 90.On the other hand, eliminated absorption by 110 pairs of wafers 90 of platform main body.Then, central pad 111 is risen to extrusion position by the lifting drive system.

Then, inoranic membrane is handled 200 and is advanced to from withdrawn position (by the solid line indication of Fig. 1 and 87) and to handle position (Fig. 1 and 87 dotted line indication).By so doing, wafer 90 is inserted into the insertion port 201 of inorganic processing 200, and the peripheral part of wafer 90 is positioned in the guide path 202.Because wafer 90 is by central pad 111 liftings, inoranic membrane handles 200 can upwards leave platform main body 110, thereby and, 200 can be prevented from and platform main body 110 is interfered.

According to such as the gas of the composition of the inoranic membrane 94 of nitrogen, oxygen and fluorine by plasma, and the gas of plasma is guided an end along the bearing of trend of guide path 202.When the guide path 202, inoranic membrane 94 reactions on the gas of this plasma and the periphery that is coated in wafer 90.By so doing, shown in Fig. 5 (c), inoranic membrane 94c can remove by etching.Gas of handling and byproduct are discharged from the other end of guide path 202 through unshowned drain passageway.

Concurrently, central pad 111 is by the rotary drive system rotation of pad driver element 113.The inoranic membrane 92c that is coated on the whole periphery of periphery of wafer 90 can utilize at least one rotation of central pad 111 to remove.

When the removal of inoranic membrane 92c finishes, supply with from the plasma of plasma discharge apparatus and to stop, and inoranic membrane is handled 200 and is retracted into withdrawn position.Then, forked robots arm is inserted between wafer 90 and the platform 10.The lower surface of the wafer 90 that the radius that this forked robots arm's adjacency is positioned at central pad 111 is outer, and the absorption of cancellation central pad 111.This makes and wafer 90 can be sent to forked robots arm and wafer 90 is carried out.

Platform structure according to this surface processing device, because the cooled flow path of platform main body 110 and suction flow passage can be set to leave axis L c along radial direction, fully big space be can obtain at middle body, mechanism that is used for lifting and rotation central pad 111 and the suction flow passage that points to central pad 111 are used to arrange.

Above-mentioned structure can also be applied to only one type the film that is designed for removal such as organic membrane.Under the sort of situation, do not need inorganic processing 200 certainly.Do not need to be used for the rotary drive system of central pad 111 yet.

The interior perimeter surface that replaces stationary magazine creel 180, the annular channels 181c of groove shape, 182c, 183c can be formed in the outer surface of rotating cylinder 150.

Figure 90 has shown that second handles a modification example of 200.This second handles 200 (a gas guiding part) is connected with plasma discharge apparatus 260 one that are used to produce reactant gas.

Plasma discharge apparatus 260 comprises the thermode 261H that is connected to power supply and the ground electrode 261E of ground connection.The space that forms between these electrodes 261H and 261E is with acting on the space 261a that produces common atmospheric plasma.For example, this plasma gas produces space 261a and allows to be guided wherein and therein by plasma such as nitrogen, oxygen, fluorine gas, chloride gas or their mist.

Gas converges nozzle 263 and is set at electrode 261H than plasma discharge apparatus 260, the position that 261E is low.This gas converges nozzle 263 and is fixed to second and handles a upper surface (gas guiding part) of 200.Gas converges path 263a and is formed on gas and converges in the nozzle 263.Gas converges path 263a and is connected to the downstream that plasma produces space 261a, and diameter reduces downwards therefrom.

The bottom that gas converges path 263a is connected to the inlet port 202a of the upstream extremity of guiding port 202.

Preferably consider the life-span of spike, the arc length of gas guiding part spare 200 (along the length of the circumferential extension of wafer 90) suitably is provided with.For example, gas guiding part spare 200 length shown in Figure 91 have the central angle of about 90 degree.Gas guiding part spare 200 length shown in Figure 92 have the central angle of about 180 degree.The arc length of gas guiding part spare 200 has the central angle of about 45 degree.

The position of the inlet port 202a of gas guiding part spare 200 is not limited to the top of guide path 202.Shown in Figure 94 (a), can be disposed in the outer circumferential side of guide path 202.When will being removed by emphasis, this film that is arranged on the outer face that is coated in wafer 90 is fit to.

Shown in Figure 94 (b), inlet port 202a can be disposed in the downside of guide path 202.This film that is arranged on the outer end edges back side partly that is coated in wafer 90 is fit in the time of will being removed by emphasis.

Inlet port 202a can be set to the side end surface of gas guiding part spare 200.

Similarly, discharging port 202b can be set on side end surface, upper end face, rear surface or the outer surface of gas guiding part spare 200.

According to wherein with removed unwanted material, film type, with the processing region of the tolerance that is supplied to, processing intent etc., the cross section structure and the size of the guide path 202 of gas guiding part spare 200 can be provided with suitably.

For example, shown in Figure 94 (c), the cross section of guide path 202 can be reduced.By so doing, the processing width can access and reduce.

Shown in Figure 94 (d), also acceptable is: guide path 202 has the cross section structure of first shape, so that the back side of wafer 90 is near the flat surfaces of guide path 202.Because this layout, the peripheral part of the upper surface of described wafer 90 can be handled by emphasis.Though not shown, also acceptable is: guide path 202 has bottom half tee section structure, so that the upper surface of wafer 90 is near the bottom surface, top of guide path 202.By so doing, the back side of wafer 90 can mainly be handled.

Shown in Figure 94 (e), guide path 202 can have square cross.

Gas guiding part spare 200 is not limited to be used to remove and does not need the inoranic membrane that heats, and what it need to can be applicable to heating similarly is used to remove organic membrane.Under the sort of situation, shown in Figure 95, can be connected to gas guiding part spare 200 such as the irradiated heat device of laser heater 20.

Illumination unit 22 (irradiator) is fixed to the upper surface of gas guiding part spare 200, axis normal orientation.Fiber optic cables 23 extend from the lasing light emitter 21 of laser heater 20, and are connected to illumination unit 22 alternatively.

Laser radiation unit 22 is arranged near the end in the inlet port 202a of gas guiding part spare 200 side.

As shown in figure 26, the hole portion 203 with circular cross-section is formed on the top of the gas guiding part spare 200 in the link position that is in laser radiation unit 22.The upper surface of guidance part 200 is led in the upper end of hole portion 203, and the bottom is communicated with the upper end of guide path 202.

Cylindrical light transparent member 204 is embedded in the hole portion 203.Light transparent member 204 comprises the transparent material such as quartz glass with light transmission features.Light transparent member 204 preferably has the good restraining such as the reactant gas of ozone suppression characteristic.As the material that is used for light transparent member 204, except that quartz glass Pyrex and other general purpose glass, can use resin such as Merlon, propylene with fine transparency.

For example, according to the experiment of Figure 69 and table 1, the fact that quartz glass has the saturating characteristic of fine light is firmly established.

The upper end face of light transparent member 204 exposes in the mode concordant with the upper surface of gas guiding part spare 200.The rear surface of light transparent member 204 is in the face of the upper end of guide path 202.

Laser radiation unit 22 just is positioned at light transmissive material 204 tops, and relative with light transparent member 204 at the outflow window of the lower end of laser radiation unit 22.Laser radiation unit 22 and light transparent member 204 are arranged little their center line and aim at.

Be transmitted through light transparent member 204 with ethod of remittance laser of irradiation under the laser radiation unit 22, and focus on the inside of guide path 202.

As the reactant gas supply source, ozone generator 70 is connected to the inlet port 202a of gas guiding part spare 200.Replace ozone generator 70, can use the oxygen plasma device.

Thereby the interior gas flow direction of the rotation direction of the rotation direction of platform 10 and wafer 90 (by the indication of the arrow of Figure 95) and guide path 202 is consistent.

According to apparatus structure, by fiber optic cables 23, the laser that comes self-excitation light source 21 is with ethod of remittance irradiation under the laser radiation unit 55.Laser transmits by light transparent member 204, and enters guide path 202, so that hit a position of the peripheral part of wafer 90 in the guide path 202 partly.By so doing, the peripheral part of wafer 90 is locally heated.Side by side, the ozone from ozone generator 70 is guided guide path 202 from inlet port 202a.Described ozone is heated the position with the part and contacts.By so doing, can effectively remove the unwanted film that needs heating such as organic membrane.

And the peripheral part of wafer 90 is heated in the position near the upstream side of guide path 202.Because this layout, film can react with the fresh ozone gas of q.s.After this, according to the rotation of platform 10, above-mentioned heating location is moved to the downstream of guide path 202, and during moving down, is heated the position and keeps high temperature for a moment.Therefore, not only in the upstream side part of guide path 30, and, can carry out the reaction of q.s in central portion office and downstream part.This makes can improve treatment effeciency reliably.

Under the situation that the film that is coated on the rear side will be removed by emphasis (or main), laser radiation unit 22 preferably is set to the downside of gas guiding part spare 200, so that laser can be in the mode that converges from below irradiation to guide path 202.

Figure 97 has shown the embodiment that is provided with corresponding to such as the mechanism of the cutting part of wafer notch and directional plane.

Shown in Figure 101, wafer has the structure of plate-like.The size of wafer 90 (radius) has many standards.The part of wafer 90 circular circumference portions 91 is evenly cut, and directional plane 93 forms cutting part.The size of directional plane 93 is by SEMI, and standards such as JEIDA are set up.For example, have at wafer under the situation of radius r=100mm, its directional plane length L 93 is that 55mm is to 60mm.Therefore, suppose the regulation that does not have directional plane 93, the empty periphery from the middle body of directional plane 93 to wafer be that d=3.8mm is to 4.6mm apart from d.

When forming film on wafer 90, film 92 is formed on the edge of directional plane 93 sometimes.

Shown in Figure 98, the chip processing device of this embodiment comprises: box 310; Robots arm's (or manipulator) 320; Alignment portion 330; With processing section 340.Processed wafer 90 is contained in the box 310.Robots arm 320 picks up (Figure 98 (a)) wafer 90 from box 310, by alignment portion (Figure 98 (b)) wafer 90 is sent to processing section 340 (FIG.98 (C)), and the wafer 90 of unshowned processing is turned back to box 310.

Alignment portion 330 is provided with aligned units 331 and alignment tool 332.Shown in Figure 98 (a), alignment tool 332 has the structure of plate-like and can rotate around central axis.Shown in Figure 98 (b), for the purpose of aiming at, described wafer 90 temporarily is placed on the alignment tool 332.

Though do not show in detail that aligned units 331 is provided with the non-contact sensor of optical type.For example, this non-contact sensor comprises the optical receiver that is used to export the light emitting devices of laser and is used to receive laser.Light emitting devices and optical receiver are arranged to the peripheral part 90a that will be placed on the wafer 90 on the alignment tool 332 and vertically are clipped between them.Be blocked with ratio from the optical transmitting set emitted laser, and therefore, the light quantity that is received by optical receiver is changed corresponding to the overhang of the peripheral part of wafer 90.Based on this, the side-play amount of wafer can be detected.And, by the position at flip-flop place discontinuously, also can detect directional plane 93 (cutting part) by the light quantity that measure to receive.

Aligned units 331 is not only formed the offset detection part of wafer 90 but also is formed " the cutting probe portion " that is used to survey directional plane 93 (cutting part).

" aligning guide " is made up of aligning parts 330 and robots arm 320.

Shown in Figure 97, chip processing device is provided with treatment bench 10 and handles 370.Treatment bench 10 can center on vertical axis (rotation, central axis) rotation.Encoder motor 342 is used as rotary driving part.Prepare to be set on the upper surface of treatment bench 10 by the wafer 90 that aligning parts 330 is aimed at.

Shown in Figure 97 and 98 (c), handle on the 370 y axle (first) that are disposed in perpendicular to the z axle.Certainly, the y axle extends along the radial direction of treatment bench 10.

Shown in Figure 97, the supply nozzle 375 of picture point shape mode opening is set to handles a lower end of 370.Shown in Figure 99, the point-like opening of supply nozzle 375 just is disposed on the y axle.Shown in Figure 97, the base end part of supply nozzle 375 is connected to ozone generator 70 (handling the fluid supply source) by fluid supply line 71.

The plasma treatment head that comprises pair of electrodes can be used as processing fluid supply source.Replace dry systems, be used for to be used by the moist system that supply nozzle 375 ejects as the chemical liquid of handling fluid as ozone generator and plasma treatment appts.

Though not shown, the processing of dry systems 370 is provided with the suction nozzle of the fluid (comprising byproduct etc.) that is used to adsorb near the processing the supply nozzle 375.

Handle 370 and be connected to nozzle location governor motion 346.The nozzle location governor motion comprises servomotor, dc driver etc.Thereby by slide handling 370 a sliding supply nozzle 376 along the y axle, the nozzle head governor motion is operated to regulate nozzle location (referring to Figure 99 (a) and 99 (c) to 99 (i)).Only can be thereby handle 370 supply nozzle 375 along the activity of y axle, and it is limited along the mobile of other direction.

With processed wafer 90 can be virtually any size.With selected size coupling, utilize position adjusting mechanism 346, handle a position of 70 and regulated, and be oppositely arranged with the peripheral part 90a of wafer 90 along the y direction of principal axis.

And, utilizing controller 350, position adjusting mechanism 36 moves synchronously with the rotation of treatment bench 10 and is activated.Handle the direction of processing that the information of 370 point that will be positioned maybe will move 370 and the information of translational speed is stored in the controller 350 according to the anglec of rotation of treatment bench 10.Particularly, shown in Figure 100, when the anglec of rotation of treatment bench 10 in the first rotation angle range φ 1, handle 370 and be secured in place, and set up fixing point.When the anglec of rotation of treatment bench 10 is in the second rotation angle range φ 2, handles 370 and be moved and set up the direction and the speed that move.

Shown in the warning triangle of Figure 99, the anglec of rotation of treatment bench 10 is according to 10 reference point 10p sets up with clockwise angle vertical view from the y axle to platform.

In the first rotation angle range φ 1 is based upon from zero degree to the scope corresponding to the anglec of rotation φ 91 of the value of circular circumference portion 91 central angles just.This rotation angle range φ 1 moves through the required time period of y axle corresponding to circular circumference portion 91.

The second rotation angle range φ 2 is based upon in the scope of φ 91 to 360 degree.The width of second anglec of rotation φ 2 (360-φ 91) is just consistent with the width (referring to Figure 101) of the central angle φ 93 of directional plane 93.Rotation angle range φ 2 moves through the required time period of y axle corresponding to directional plane 93.

The fixing point of the supply nozzle 375 in the first rotation angle range φ 1 is established to the point (leaving the point of the distance of the radius r that equals wafer 90 substantially from rotation) on the y axle of the radius r that is generally equal to wafer 90.It is overlapping that this fixing point and circular circumference portion 91 move through the point at y axle place.

In the second rotation angle range φ 2, handle 370 and in the first half of second rotation angle range, shift to initial point direction (towards the direction of rotating shaft z) along the y axle, reverse rotation is just in the midpoint of the second rotation angle range φ 2, and moves along positive direction (leaving the direction of rotating shaft z) at latter half.The rotary speed of supposing treatment bench 10 is ω 10, and the translational speed V in the first and second half parts is set up by following equation:

Wherein d is that to cut L93 be length (referring to Figure 101) for the degree of depth of directional plane 93.Shown in equation (1), the rotary speed ω of movement speed v (gradient among Figure 100) and treatment bench 10 ₁₀Proportional.

As wherein radius r=100 and directional plane length L 93=55mm under the situation of the wafer of the standard of the above-mentioned example of 60mm, if rotary speed is about 1rpm, the speed v of the processing head in rotation angle range φ 2 can be represented to about 1.6mm/sec by the about 1.5mm/sec. of v=.

Shown in Figure 98 (a) and 98 (b), when utilization is provided with chip processing device corresponding to the mechanism of directional plane and is used to remove unwanted film 92c on the peripheral part that is coated in wafer 90, processed wafer 90 is taken out from box 310 by robots arm 320, and be placed on the alignment tool 332.At that time, wafer 90 departs from alignment tool usually.From the point " b " of the point " a " of the overhang maximum of platform 332 and overhang minimum 180 degree away from each other.Alignment tool 332 carries out a complete rotation under the sort of state.During this period, maximum projecting point " a " and its overhang and minimum projecting point " b " and its overhang are surveyed by the non-contact sensor of aligned units 331.Particularly, by being clipped in the middle optical transmitting set is vertical with optical receiver, measuring the anglec of rotation of platform 332 this moment and receive the maximum and the minimum value of the amount of light.Concurrently, by measuring the anglec of rotation of platform 332 when the amount that receives light increases suddenly discontinuously, the position of directional plane 93 is also tentatively surveyed.Based on measurement result, wafer 90 is aimed at by robots arm 320.That is, with respect to platform 332, wafer 90 moves 1/2 distance of maximum overhang and minimum overhang to minimum projecting point " b " from maximum projecting point " a ".For moving removable wafer 90 or travelling carriage 332.Meanwhile, directional plane 93 is directed to predetermined direction.

Next, shown in Figure 98 (c), wafer 90 is sent to processing unit 340 by robots arm 320 and is set on the treatment bench 10.Because wafer 90 has been subjected to alignment function, it can correctly be aimed at treatment bench 10 at the center.

Also acceptable is: wafer 90 directly is sent to treatment bench 10 from box 310, so that wafer 90 can be aimed on treatment bench 10 in mode as mentioned above.By so doing, can cancel alignment tool 332.

When being set to wafer 90 on the treatment bench 10, wafer 90 is at centrally aligned treatment bench 10, and directional plane 93 is along the predetermined direction orientation.Shown in Figure 98 (c) and 99 (a), in this embodiment, the left part 93a of directional plane 93 is directed to the reference point 10p of treatment bench 10.The reference point 10p of treatment bench 10 is set on the y axle in the initial platform.

Then, shown in Figure 99 (a), utilize position adjusting mechanism 346, handle 370 carried out along the y direction of principal axis position adjustments with the size match of wafer 90.By so doing, it is relative with the peripheral part 90a of wafer 90 that supply nozzle 375 is arranged to.In this embodiment, supply nozzle 375 be arranged to end 93a that is formed on directional plane 93 and circular circumference portion 91 between the angle relative.

After this, the ozone that is generated by ozone generator 70 is fed into the processing head by managing 71, and ejects by supply nozzle 375.This ozone is injected on the peripheral part 90a of wafer 90, and reacts with unwanted film 92c.By so doing, can remove unwanted film 92c.

With this ozone spraying concurrently, treatment bench 10 by encoder motor 342 with predetermined rotary speed around rotation (z axle) rotation.Shown in the arrow of Figure 99 (a), this direction of rotation for example is clockwise direction in vertical view.Because this layout, wafer 90 rotates to the mode shown in 99 (i) according to Figure 99 (a) as time goes by, and move along circumferential order the injected position of ozone, so that the unwanted film 92c that is coated on the peripheral part 92a of wafer 90 can be along circumferentially being removed in proper order.In 99 (i), the dash area of the peripheral part 90a of wafer 90 has shown that unwanted film 92c is from its removed part at Figure 99 (b).

Now detailed description is used to remove the step of unwanted film.

Based on data corresponding to Figure 100, controller 350 be operated with the rotation of treatment bench 10 enable position governor motion 346 synchronously, thereby and regulate and handle the position that supply nozzle 375 is regulated in a position of 370.That is, shown in Figure 100, under the situation of the anglec of rotation in the scope of φ 1 of treatment bench 10, supply nozzle 375 is fixed to the point of the radius r that is generally equal to wafer 90 on the y axle.By so doing,, be moved during the time period of passing the y axle to shown in 99 (e) as Figure 99 (a) in circular circumference portion 91, supply nozzle 91 can point to circular circumference portion 91 reliably.Therefore, ozone can be sprayed onto in the circular circumference portion 91 reliably, and can remove the unwanted film 92c that is coated in the circular circumference portion 91 reliably.Then, according to rotation, processed part is along the circumferential extension of circular circumference portion 91, and soon, shown in Figure 99 (e), handles on the whole zone that operates in circular circumference portion 91 and finish.The right part 93b of directional plane 93b arrives the position of supply nozzle 375.At that time, rotation angle range is switched to φ 2 from φ 1.

Shown in Figure 100, in the first half of rotation angle range φ 2, be moved toward treatment bench 10 with the speed of above-mentioned equation (1) thereby handle 370 supply nozzle 375.On the other hand, to shown in 99 (g), at that time, the right side part of directional plane 93 moves through the y axle as Figure 99 (e).According to this rotation, crossing point deflection rotation (z axle) side.The fluctuation of crossing point is mobile consistent with supply nozzle 375 usually.This makes and can keep supply nozzle 375 always along the edge of the right side part of directional plane 93, and removes the unwanted film 92c that is coated on the described specific part reliably.

Shown in Figure 100, when handling circular circumference portion 91, just (the r point of y axle usually) moves on to the amount of the degree of depth that equals directional plane 93 to treatment bench 10 from this position at the supply nozzle 375 of the intermediate point of rotation angle range φ 2.At that time, shown in Figure 99 (g), directional plane 93 is vertical with the y axle, and the just mid portion of directional plane 93 moves through (r-d) point on the y axle.Therefore, supply nozzle 375 and directional plane 93 overlap each other at mid portion, and can remove the unwanted film 92c on the mid portion that is coated in directional plane 93 reliably.

Shown in Figure 100, the moving direction of supply nozzle 375 is put upside down at the intermediate point place of rotation angle range φ 2, and moves along the direction of leaving treatment bench 10 in the latter half of rotation angle range φ 2.Identical (speed in the above-mentioned equation (1)) of this translational speed and first half.At that time, to shown in 99 (i), the left part of directional plane 93 moves through the y axle as Figure 99 (g), and crossing point continues to deviate from according to the positive direction of rotation along the y axle.Moving of the fluctuation of crossing point and supply nozzle 375 is consistent each other usually.This makes and can keep supply nozzle 375 always along the edge of the left part of directional plane 93, and removes the unwanted film 92c that is coated on this specific part reliably.

Adopt mode as discussed above, unwanted film 92c can be not only removed reliably from the circular circumference portion 91 of wafer 90 but also from the whole zone of the periphery that comprises directional plane 93.

Shown in Figure 99 (i), when the anglec of rotation just is 360 when spending, supply nozzle 375 is sent back to initial position.

When unwanted film was removed EO, wafer 90 left treatment bench 10, and turns back to box 310 by robots arm 320.

According to this chip processing device,, can satisfy the multiple size of wafer 90 by slide to handle 370 along the y direction of principal axis.And it can also deal with the processing of directional plane 93.Therefore, because only two axles need being made up of single sliding axle (y axle) and single rotating shaft (z-axle) are as the drive system of entire process part 340, so structure is simplified.To on time, directional plane 93 is along predetermined direction 10p orientation, and the position of supply nozzle 375 is synchronously regulated with the rotation of treatment bench 10.By so doing, supply nozzle 375 is kept along directional plane 93, and it no longer needs side by side to survey directional plane 93 and present back detection data with unwanted film removal operation.Therefore, can easily carry out control operation.

Shown in Figure 102, also acceptable is: handle at directional plane during the time period of operation, in rotation angle range φ 2, thereby the translational speed of handling a translational speed supply nozzle 375 of 370 reduces gradually at the first half of rotation angle range φ 2, and in latter half, increase gradually, so that in figure line, draw circular arc.By so doing, handle 370 to move the fluctuation that can occur than first crossing point place at directional plane 93 consistent more accurately.Therefore, supply nozzle 375 can be held more reliably along the edge of directional plane 93.

This device can also tackle the situation that the cutting part that forms is a recess in the periphery of wafer.

Supply nozzle can slide just enough along first direction of principal axis, and the entire process head need not to move.

At high temperature improve under the situation of processing speed, can use the heater that when handling, can be locally heated part.This heater preferably uses the noncontact heater such as pharoid of laser etc.On the other hand, can be set to the inside of treatment bench by the heat sink that can cool off wafer from the core heat absorption of wafer.

Handle fluid and be not limited to ozone gas, according to such as the quality of unwanted film 92c, the wet or treatment system done etc., can from the gas that comprises multiple components or fluid, select.

In the device shown in Figure 103 and 104, the x-axle is to handle 370 first of being provided thereon.Shown in Figure 103, the position of supply nozzle 375 on the x axle regulated by position adjusting mechanism 346.

Shown in Figure 104, the measurement mechanism 341 of position that is used to measure the periphery of wafer is set at the y axle.Utilize unshowned advancing/evacuating mechanism, therein measurement mechanism to measuring position that rotating shaft z advances (solid line indication among Figure 105 (a)) with wherein advance/withdrawn position (indicating) that evacuating mechanism is recalled along the direction of leaving rotating shaft z by dotted line among Figure 105 (a) between, measurement mechanism 341 can advance on the y axle or recall.

Though do not show in detail that measurement mechanism 31 comprises the optics non-contact sensor.For example, this non-contact sensor comprises optical transmitting set and the optical receiver that is used to export laser.Optical transmitting set and optical receiver are arranged to the peripheral part 90a that will be placed on the wafer 90 on the platform 10 and are clipped in the middle.Be blocked with ratio from the laser of optical transmitting set, and the reception light quantity in the optical receiver changes corresponding to the overhang of the peripheral part of wafer.Owing to this layout, can survey the position (and side-play amount of wafer) of the peripheral part of wafer.

In Figure 104 and 105, the recess and the directional plane of the periphery of wafer do not show.

Shown in Figure 104, this device does not dispose aligning guide 330.

Controller 350 is carried out following control operation (referring to the flow chart of Figure 106).

Shown in Figure 104 (a), processed wafer 90 is taken out (step 101) from box 310, and shown in Figure 104 (b), be placed on platform 10 by robots arm 320 and be used to hold (or absorption) (step 102).Owing to do not accept alignment function, wafer 90 departs from a little with respect to platform 10 usually.

Then, the rotation of platform 10 begins (step 103).Shown in the arrow of Figure 105 (a), this direction of rotation for example is clockwise direction in vertical view.Correspondingly, measurement mechanism 341 is disposed in the upstream side on the direction of rotation, and handles 370 and be disposed in downstream side, so that measurement mechanism 341 and handle 370 90 degree away from each other.

And shown in the white arrow of Figure 105 (a), measurement mechanism 341 advances to measuring position (step 104) along the y axle from withdrawn position; And handle 370 and advance to processing execution position (step 105) along the x axle from withdrawn position.

Subsequently, measurement mechanism 341 measures the crossing point (step 110) that the peripheral part 90a of wafer 90 wherein moves through the y axle.As described later, this operation of step 110 be equal to calculating wherein before 1/4 circulation of the rotation of platform 10 circulation the peripheral part 90a of wafer 90 move through the instantaneous point of x axle.

Then,, handle to advance to step 112, and in step 112, utilize governor motion 346, handle a supply nozzle of 370 and be sent to and the point on the identical x axle of the measured value of the crossing point on the y axle in step 110 through the judgement of step 111.And, after the timing that supply nozzle 375 is positioned at this point is arranged to 1/4 circulation of the rotation circulation that is set in lucky platform 10.For example, shown in Figure 105 (a), suppose that the measured value in the step 110 is r1[mm on the y axle], shown in Figure 105 (b), the supply nozzle 375 after 1/4 circulation is positioned in the some r1[mm of x axle] locate.By so doing, when turning 90 degrees by revolving, when the point that moves through the y axle in the time of step 110 in the peripheral part 90a of wafer 90 moved through the x axle, supply nozzle 375 can be positioned on the crossing point of x axle.Because have the adequate time that equals 1/4 circulation, feedback operation can be carried out reliably.

Measurement mechanism 341 and controller 350 constitutes " peripheral part that is used to calculate wafer wherein is with respect to first calculating part that moves through ".

Figure 105 (a) has shown the state separately that can occur with per 1/4 circulation with consecutive order to 105 (d).Figure 105 (a) has shown the state separately that can occur in per 1/4 circulation to the wafer 90 of 105 (d) indication.

Concurrently, be fed into and handle 370 by managing 71 from the ozone of ozone generator 70, and eject (step 113) by supply nozzle 375.By so doing, ozone can be directed onto on the x axle crossing point of peripheral part 90a of wafer 90, and can remove coating unwanted film 92c at that point.This process that is used for beginning the ozone spraying in step 113 is only in first-class execution, and after this, carries out the ozone spraying continuously.

After this, process turns back to step 110, and measures the y axle crossing point (step 110) of the peripheral part 90a of wafer 90.Based on the result who measures, the position adjustments of the supply nozzle 375 after 1/4 circulation is carried out (step 112) repeatedly.

As with Figure 105 (a) of time sequencing mode to shown in 105 (e), according to the rotation of wafer 90, can remove the unwanted film 92c on the peripheral part 90a that is coated in wafer 90 in proper order.In 105 (e), the dash area of the peripheral part 90a of wafer 90 indicates unwanted film 92c from its removed part at Figure 105 (b).

Even wafer 90 departs from, the position of supply nozzle 375 can be conditioned the profile with coupling peripheral part 90a, and therefore, can remove unwanted film 92c reliably.Therefore, need not to prepare to be used to correct the aligning guide that departs from, and structure that can simplification device.And after wafer 90 was picked up from box 310, wafer 90 can directly not be placed on the platform 10 by aligning guide, and can carry out the removal operation of unwanted film 92c immediately.And, can cancel unwanted film and remove preoperative alignment function.Therefore, can reduce total processing time.

And, parallel with the calculating of the x axle crossing point of instant execution, carry out the position adjustments of supply nozzle 375 and the ejection operation of ozone.Therefore, can reduce the processing time biglyyer.

In the near future, after the gas blowing of step 113 operation beginning, wafer has carried out a complete rotation, and on the circumferential whole zone of the peripheral part 90a of wafer 90, unwanted film removal process finishes (referring to Figure 105 (e)).

At that time, in response to the problem of pronouncing " whether the processing that is used for the whole periphery of wafer finishes ", make the judgement of "Yes".

Based on above-mentioned judgement, ozone gas stops to eject (step 120) by supply nozzle 375.

Then, shown in Figure 105 (e), handle 370 and be retracted into withdrawn position (step 121), and measurement mechanism 341 is retracted into withdrawn position (step 122).

Then, the rotation of platform 10 stops (step 123).

After this, the absorption of wafer 90 on platform 10 (or keep, hold) operation cancellation (step 124).

Then, wafer 90 is transported by robots arm 320 and puts into effect 10 (steps 125), and returns box 310 (step 126).

Though measurement mechanism 341 be arranged to from supply nozzle along platform direction of rotation upstream lateral deviation from 90 the degree, described depart from be not limited to 90 the degree, it can be more greater or lesser than the amount of described angle deviating.

Survey by measurement mechanism 341 such as the directional plane of wafer and the cutting part of recess, and calculate x axle crossing point.By so doing, the edge of cutting part also can access processing.

In the control operation shown in the flow chart of Figure 106, parallel with the calculating of the position of the peripheral part 90a of wafer 90, carry out the process that is used to regulate nozzle location and ejects gas.Shown in the flow chart of Figure 107, also acceptable is: after the position calculation of the whole periphery of the peripheral part 90a that carries out wafer 90, can carry out the process that is used to regulate nozzle location and ejects gas.

Promptly, in Figure 107, after in step 104 and step 105, carrying out measurement mechanism 341 and handling a set positions of 370, point on the y axle that the peripheral part 90a that measurement mechanism 341 is measured wafer 90 moves through, platform 10 carries out a complete rotation simultaneously, and obtains the position data (step 115) of the peripheral part 90a of wafer 90.That is, acquisition is corresponding to the y axle crossing point data of the peripheral part 90a of the wafer 90 of the anglec of rotation of platform 10.When the data of acquisition like this are departed from 90 when spending, they become consistent with the calculated data corresponding to the x axle crossing point of the peripheral part 90a anglec of rotation, wafer 90 of (at once) platform 10.The data of described calculating are stored in the memory of controller 350.

Also acceptable is: replace the position data of whole periphery, calculate offset direction and the bias of wafer 90 with respect to platform 10, and those bias datas are used as the data of aforementioned calculation.That is, shown in Figure 104 (b), what the error that occurs when being placed on platform 10 owing to wafer 90 in the step 101 caused departs from, and has two points " a " and " b " on the peripheral part 90a of wafer 90.At point " a ", peripheral part 90a becomes maximum from the overhang of platform 10, and simultaneously at point " b ", it is minimum that overhang becomes.Maximum extrusion position a and overhang and minimum outgoing position b and overhang are surveyed by measurement mechanism 341.Is offset direction from minimum projecting point " b " towards the direction of maximum projecting point " a ", and half of the difference between the minimum overhang of the overhang of maximum projecting point " a " and minimum projecting point " b " is bias.Based on the bias data and the radius data of wafer 90, can calculate x axle crossing point corresponding to the peripheral part 90a of the wafer 90 of the anglec of rotation of (moment) platform 10.

After this, process advances to step 116, and the calculated data of position-based governor motion 346 is wherein handled a position of 370 and therefore the position of supply nozzle 375 is adjusted.That is, according to the anglec of rotation of platform 10, supply nozzle 375 is positioned in the peripheral part 90a of wafer 90 wherein moves through the x axle with this anglec of rotation calculation level.Parallel with this position adjustments, eject ozone by supply nozzle 375.By so doing, regardless of departing from of wafer 90, the x axle that ozone can be directed onto the peripheral part 90a of wafer 90 crosses on the position.Therefore, can remove the unwanted film that is coated in this position reliably.

The process that is used to regulate the position of nozzle and eject ozone in step 116 is able to continuous execution.By so doing, unwanted film 90c can circumferentially being removed from whole zone along the peripheral part 90a of wafer 90.Therefore, in response to the problem of pronouncing " whether the processing of the whole periphery of wafer finishes ", make the judgement of "Yes".

After this identical (step 120 to 126) among the process of following and Figure 106.

(industrial usability)

During the manufacture process of semiconductor wafer and during the manufacture process of liquid crystal display substrate, the present invention can for example be used for removing the unwanted film that is coated on the periphery.

Claims (15)

1. the equipment that does not need material on the peripheral part that removes substrate by reactant gas, described equipment comprises:

Eyelid retractor is used to support described substrate;

Pharoid, described pharoid shines hot light partly to the impact point of the peripheral part of substrate; With

Reactant gas feeder, described reactant gas feeder make reactant gas flow along the circumferencial direction on the peripheral part of substrate,

Wherein said reactant gas feeder comprises:

Injection nozzle, described injection nozzle are used for reactant gas is supplied with towards described impact point; With

Suction nozzle, described suction nozzle are used for the flow direction intake-gas on the peripheral part of reactant gas at substrate in the downstream of impact point, and

Wherein said injection nozzle ejects described reactant gas in such a manner towards described impact point, promptly when the side from the imaginary plane quadrature that should be positioned via described eyelid retractor with described substrate looks up, the injection direction of described reactant gas is for roughly along the circumferencial direction of stating substrate in described impact point place.

2. equipment according to claim 1, described equipment further comprises heat dump, described heat dump is encased in as absorbing heat in the platform of eyelid retractor and from described.

3. equipment according to claim 1 and 2, wherein said injection nozzle is made of light transmissive material.

4. equipment according to claim 1 and 2, wherein when when the side parallel with described imaginary plane looks up, described injection nozzle is inclined to distal portion towards injection nozzle near described imaginary plane.

5. equipment according to claim 1 and 2, wherein when when the side with described imaginary plane quadrature looks up, described injection nozzle tilts towards the inboard of described substrate a little with respect to the circumferencial direction of stating substrate in described impact point place.

6. equipment according to claim 1 and 2, wherein:

Described suction nozzle sucks near described impact point and the gas in downstream in such a manner, and promptly when when the side with described imaginary plane quadrature looks up, the suction direction of described suction nozzle is for roughly along described injection direction.

7. equipment according to claim 6, wherein when when the side parallel with described imaginary plane looks up, described suction nozzle is inclined to distal portion towards suction nozzle near described imaginary plane.

8. equipment according to claim 6, wherein when from described orthogonal direction, the distal portion of described injection nozzle and the distal portion of described suction nozzle are arranged to roughly face with each other on described circumferencial direction in the mode of inserting described impact point.

9. equipment according to claim 1 and 2, the bore dia of wherein said suction nozzle is greater than the bore dia of described injection nozzle.

10. equipment according to claim 1 and 2, described equipment further comprises whirligig, described whirligig is used for rotating described substrate with respect to described injection nozzle and described suction nozzle.

11. equipment according to claim 10, the local irradiation position of wherein said pharoid is towards described injection nozzle rather than the skew of described suction nozzle.

12. equipment according to claim 1 and 2, wherein said pharoid shines described hot light from the direction that radially outward has a down dip of described substrate towards described impact point.

13. equipment according to claim 1 and 2, wherein said pharoid has the illuminated portion of described pharoid, described equipment further comprises travel mechanism, described travel mechanism be used for when illuminated portion is pointed to described impact point with described illuminated portion with another plane of described imaginary plane quadrature in move.

14. the equipment that does not need material on the peripheral part that removes substrate by reactant gas, described equipment comprises:

Eyelid retractor is used to support described substrate; With

Reactant gas feeder, described reactant gas feeder make reactant gas flow along the circumferencial direction on the peripheral part of substrate,

Wherein said reactant gas feeder comprises: injection nozzle, described injection nozzle are used for reactant gas is supplied with towards the impact point of the peripheral part of substrate; And suction nozzle, described suction nozzle is used for the flow direction intake-gas on the peripheral part of reactant gas at substrate in the downstream of impact point, and

Wherein said reactant gas feeder comprises the gas guiding part, described gas guiding part has guide path, described guide path is extended with the mode of the peripheral part that the surrounds described substrate peripheral part along described substrate, described injection nozzle is connected to an end of described guide path, and described suction nozzle is connected to another end of described guide path.

15. one kind removes the method that does not need material on the peripheral part of substrate by reactant gas, described method comprises step:

Support described substrate;

Impact point to the peripheral part of substrate shines hot light partly;

Described reactant gas is ejected towards described impact point in such a manner, promptly when when the side with the substrate quadrature looks up, the injection direction of described reactant gas along the circumferencial direction of stating substrate in described impact point place, makes that the reactant gas of described injection is mobile along the circumferencial direction of the peripheral part of described substrate for roughly by this; With

Near the peripheral part of downstream suction at the flow direction of described reactant gas on the peripheral part of described substrate gas at described substrate.

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