CN101097335A - Liquid crystal display device and method of fabricating the same - Google Patents
Liquid crystal display device and method of fabricating the same Download PDFInfo
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- CN101097335A CN101097335A CNA2006101608984A CN200610160898A CN101097335A CN 101097335 A CN101097335 A CN 101097335A CN A2006101608984 A CNA2006101608984 A CN A2006101608984A CN 200610160898 A CN200610160898 A CN 200610160898A CN 101097335 A CN101097335 A CN 101097335A
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- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 16
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 7
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000001939 inductive effect Effects 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 28
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1341—Filling or closing of cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
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Abstract
A liquid crystal display device and a method of fabricating a liquid crystal display device is provided. A liquid crystal display device includes a first substrate; a second substrate; a liquid crystal layer interposed between the first substrate and the second substrate; and a light sensor, formed on the first substrate, to sense a capacitance to output an electrical signal such that the capacitance varies with an intensity of light. A method of fabricating a liquid crystal display includes forming a thin film transistor, a pixel electrode electrically connected with the thin film transistor, and a light sensor on a first substrate; providing a second substrate on which a color filter and a black matrix are formed; and forming a liquid crystal layer between the first substrate and the second substrate.
Description
The present invention requires to enjoy the right of priority of the korean patent application No.2006-60097 that submits in Korea S in the korean patent application No.2006-60096 that submitted in Korea S on June 30th, 2006 and on June 30th, 2006, and is as a reference incorporated at this.
Technical field
The present invention relates to a kind of liquid crystal display (LCD) device, relate in particular to a kind of LCD device and manufacture method thereof according to external light intensity control backlight illumination.
Background technology
The LCD device is because have the advantage of small size, in light weight, low-power consumption, high image quality and large-scale production, and the LCD device is considered to the flat-panel display device of display device of future generation.The LCD device comprises liquid crystal board and backlight, and wherein liquid crystal board comprises thin film transistor (TFT) (TFT) array base palte, color filter array substrate and is clipped in liquid crystal layer between the two substrates, and backlightly provides light to liquid crystal layer.The LCD device passes through transmissivity display image on liquid crystal board of liquid crystal layer by the optical anisotropy control light that utilizes liquid crystal molecule in the liquid crystal layer.
So it is backlight because of providing uniform luminance brightness consumes energy in dark surrounds for liquid crystal board.In dark surrounds, the user has high relatively resolution does not need extra light quantity.
Summary of the invention
Therefore, the present invention relates to a kind of basic elimination because the restriction of prior art and the liquid crystal display device and the manufacture method thereof of the caused one or more problems of defective.
An object of the present invention is to provide a kind of sensing correctly around the outside light intensity of LCD device and regulate brightness backlight to reduce the optical sensor of unnecessary power consumption.
Other features and advantages of the present invention will be set forth in the following description, and partly become clear according to describing, or be recognized by practice of the present invention.Can realize and obtain purpose of the present invention and other advantages by the structure that specifically illustrates in the instructions write and claim and the accompanying drawing.
In order to realize these purposes and other advantages and, so specifically reach broadly described liquid crystal display device and manufacture method thereof and comprise liquid crystal display device that it has: first substrate according to the object of the invention; Second substrate; Be clipped in the liquid crystal layer between first substrate and second substrate; And optical sensor, be formed on first substrate and in order to sense capacitance in case output electric signal, make electric capacity change with light intensity.
In another aspect, a kind of method of making LCD comprises: form thin film transistor (TFT), the pixel electrode that is electrically connected with thin film transistor (TFT) and optical sensor on first substrate; Second substrate that is formed with color filter and black matrix on it is provided; And between first substrate and second substrate, form liquid crystal layer.
On the other hand, a kind of method of making liquid crystal display device comprises: decide viewing area and non-display area at first substrate and second ceiling substrate; Form optical sensor in the non-display area of first substrate, this sensor is according to the light intensity output signal; In the non-display area of first substrate or second substrate, form seal pattern; And utilize bonding first substrate of seal pattern and second substrate and between the viewing area of first substrate and second substrate, form liquid crystal layer.
In another aspect, a kind of method of making LCD comprises: decide viewing area and non-display area at first substrate and second ceiling substrate, wherein form a plurality of pixel regions in the viewing area of first substrate; Form thin film transistor (TFT) and optical sensor on first substrate, wherein thin film transistor (TFT) is formed in each pixel region and optical sensor is formed in every part of non-display area, makes optical sensor according to the light intensity output signal; And bonding first substrate and second substrate and between the viewing area of first substrate and second substrate, form liquid crystal layer.
Should be appreciated that aforementioned general description and detailed description afterwards all are exemplary and explanat, and be used to provide further specifying of the invention of being asked.
Description of drawings
Comprise to provide the present invention further to understand and to comprise in this application and constitute the accompanying drawing of the application's part, show embodiments of the present invention and be used from and explain principle of the present invention with instructions one.In the accompanying drawings:
Figure 1A is the top view of the LCD device of first illustrative embodiments according to the present invention;
Figure 1B is the sectional view of the LCD device of first illustrative embodiments according to the present invention;
Fig. 2 A to 2E shows the sectional view of manufacturing according to first example procedure of the LCD device of first embodiment of the invention;
Fig. 3 A is the top view of the LCD device of second illustrative embodiments according to the present invention;
Fig. 3 B is the sectional view of the LCD device of second illustrative embodiments according to the present invention; And
Fig. 4 A to 4E shows the sectional view of manufacturing according to second example procedure of the LCD device of second embodiment of the invention.
Embodiment
Now detailed in preferred implementation of the present invention, the example of described embodiment shown in the drawings.
Figure 1A and 1B are the synoptic diagram that shows the LCD device of first illustrative embodiments according to the present invention.Especially, Figure 1A is the planimetric map of the first exemplary L CD device, and Figure 1B is the partial cross section figure along the preset lines intercepting of Figure 1A.
Shown in Figure 1A and 1B, the first exemplary L CD device is divided into viewing area " AA " and non-display area " NA ", and the first exemplary L CD device comprises first substrate 100 and second substrate 200.First substrate 100 and second substrate 200 are spaced apart a predetermined distance, bonding securely first substrate 100 of seal pattern 300 and second substrate 200, and between first substrate 100 and second substrate 200, sandwich liquid crystal layer 500.At this, the zone of the corresponding display image in viewing area " AA ", and the peripheral not zone of display image, the corresponding viewing area of non-display area " NA " " AA ".On first substrate 100, form many grid lines and many data lines.Many data lines and grid line intersect each other to limit a plurality of pixel regions in the viewing area " AA " on first substrate 100.Gate insulation layer 110 sandwiches between many grid lines and many data lines.
The pixel electrode 105 that forms a thin film transistor (TFT) " Tr " and be electrically connected in a plurality of pixel regions each with thin film transistor (TFT) " Tr ".Thin film transistor (TFT) " Tr " comprises each first grid of telling 101 from many grid lines, be formed on gate insulation layer 110 on the first grid 101, be formed on first semiconductor layer 102 on the gate insulation layer 110 and be formed on the first source/ drain 104a, 104b on first semiconductor layer 102.First semiconductor layer 102 comprises active layer 102a that is formed by amorphous silicon and the ohmic contact layer 102b that is formed by doped amorphous silicon.In addition, on the entire upper surface of first substrate 100 that comprises thin film transistor (TFT) " Tr ", form passivation layer 120.Passivation layer 120 comprises the lamination of oxide skin(coating) of the nitride layer/silicon of the oxide skin(coating) of nitride layer, silicon of silicon or silicon.
The part that grid pad portion that is electrically connected with external circuit and data pads partly are formed on corresponding non-display area " NA " on first substrate 100.Driver 600 partly links to each other with data pads with the grid pad portion, and driver 600 is formed in the non-display area " NA ".In addition, driver 600 partly links to each other with data pads with the grid pad portion by the flexible printed board circuit.
Sensing external light intensity and the optical sensor 400 of exporting electric signal are formed in the non-display area " NA " on first substrate 100.The back that is arranged on first substrate 100 backlight.According to regulating brightness backlight with the control power consumption from the electric signal of optical sensor 400 outputs.For example, during the light intensity around the LCD device low (for example, dark), reduce brightness backlight, and then reduce power consumption.
On optical sensor 400, also form passivation layer 120." AA " extends to non-display area " NA " from the viewing area to be formed on passivation layer 120 on the optical sensor 400.Because optical sensor 400 places the outside of seal pattern 300 and is exposed to the outside, so passivation layer 120 plays the 400 contaminated effects of protection optical sensor.
Fig. 2 A to 2E shows the sectional view of manufacturing according to first example procedure of the LCD device of first embodiment of the invention.
Shown in Fig. 2 A, preparation comprises first substrate 100 of viewing area " AA " and non-display area " NA ".On first substrate 100, form first conductive layer and subsequently to its composition to form first grid 101 and second grid 410.First grid 101 is formed in the viewing area " AA ", and second grid 410 is formed in the non-display area " NA ".First conductive layer can be formed by sputtering method or vacuum deposition method.At this moment, first conductive layer can be formed by the alloy of Al, Mo, Cu, AlNd, Ti, Ca, Ni or each element.
Shown in Fig. 2 B, on gate insulation layer 110, form first semiconductor layer 102 and second semiconductor layer 420 of corresponding first grid 101 of difference and second grid 410.First semiconductor layer 102 comprises active layer 102a that is formed by amorphous silicon and the ohmic contact layer 102b that is formed by doped amorphous silicon.Second semiconductor layer 420 also comprises active layer that is formed by amorphous silicon and the ohmic contact layer that is formed by doped amorphous silicon.The amorphous silicon of second semiconductor layer 420 has the electrical characteristics of the electric current of the optical sensor 400 of flowing through with outside light intensity variation.Can form first and second semiconductor layers 102 and 420 by CVD method or sputtering method.In addition, can utilize half-tone mask composition technology or diffracting mask composition technology to form first and second semiconductor layers 102 and 420 simultaneously.
With reference to Fig. 2 C, on the entire upper surface of first substrate 100 that comprises first and second semiconductor layers 102 and 420, form second conductive layer, and subsequently to its composition on first semiconductor layer 102 above the first grid 101, forming the first source/drain 104a/104b, and on second semiconductor layer 420 above the second grid 410, form the second source/drain 430a/430b.Second conductive layer can be formed by the alloy of Al, Mo, Cu, AlNd, Ti, Ca, Ni or each element.At this moment, can form second conductive layer by sputtering method or vacuum deposition method.And, on first substrate 100, form thin film transistor (TFT) " Tr " and optical sensor 400.
First and second semiconductor layers 102 and 420 each all comprise active layer and ohmic contact layer and amorphous silicon layer.Second conductive layer is formed on the top of first substrate 100 that comprises first and second semiconductor layers 102 and 420.After this, form the first source/drain 104a/104b and the second source/drain 430a/430b simultaneously.
With reference to Fig. 2 D, passivation layer 120 is formed on the entire upper surface of first substrate 100 that comprises thin film transistor (TFT) " Tr " and optical sensor 400.Passivation layer 120 is formed on the optical sensor 400 to prevent that optical sensor 400 from being polluted owing to being exposed to the outside.Passivation layer 120 can be formed by the lamination of the oxide skin(coating) of the nitride layer/silicon of the oxide skin(coating) of the nitride layer of silicon, silicon or silicon.At this moment, can form passivation layer by CVD method or sputtering method.The contact hole of the first drain electrode 104b of exposed film transistor " Tr " is defined as and runs through passivation layer 120.
The 3rd conductive layer is formed on the entire upper surface of first substrate 100 that comprises thin film transistor (TFT) " Tr ", subsequently its composition is electrically connected to pixel electrode 105 to form with thin film transistor (TFT) " Tr ".Simultaneously, remove part the 3rd conductive layer that is formed on optical sensor 400 tops.The 3rd conductive layer is formed as indium tin oxide (ITO) or indium-zinc oxide (IZO) by transparent conductive material.The 3rd conductive layer can form by sputtering method or vacuum deposition method.
Shown in Fig. 2 E, prepare second substrate 200 that is formed with color filter 220 and black matrix 210 on it.On color filter 220 and black matrix 210, form coat 230 optionally.Public electrode 240 is formed on the coat 230.Public electrode 240 is formed such as indium tin oxide (ITO) or indium-zinc oxide (IZO) by transparent electrode material.Seal pattern 300 is formed on the non-display area " NA " of first substrate 100 or second substrate 200, securely first substrate 100 and second substrate 200 is bonded together mutually by seal pattern 300 subsequently.After this, liquid crystal layer 500 is clipped in the inboard of seal pattern 300 between first substrate 100 and second substrate.In addition, on liquid crystal layer being arranged on first substrate 100 or second substrate 200 after, bonding first substrate 100 and second substrate 200.In first illustrative embodiments, liquid crystal layer 500 is arranged on the seal pattern inboard.
At this moment, form seal pattern 300 and make optical sensor 400 place the outside of seal pattern 300, and then liquid crystal layer is not formed on the optical sensor 400.Therefore, optical sensor 400 can the sensing surrounding brightness, and the electric signal control brightness backlight that produces when determining surrounding brightness by optical sensor 400.After this, by first and second substrates, backlight, support frame and top frame are put together, carry out the assembling procedure (not shown) of making exemplary L CD device.
Therefore, can make the LCD device of controlling back light power consumption, and then the overall power of control LCD device.In addition, because optical sensor 400 is formed on the outside of seal pattern 300, and the current value of the optical sensor 400 of determining to flow through, so the influence of liquid crystal layer 500 can be ignored.In addition, because optical sensor 400 is formed on the outside of seal pattern 300, so the size of optical sensor 400 is not particularly limited.Therefore, optical sensor 400 can form bigger size, and then strengthens the sensitivity of optical sensor 400.
Fig. 3 A and 3B are the synoptic diagram that shows the LCD device of second illustrative embodiments according to the present invention.Specifically, Fig. 3 A is the planimetric map of the second exemplary L CD device, and Fig. 3 B is the partial cross section figure along the intercepting of Fig. 3 A preset lines.
With reference to Fig. 3 A, the second exemplary L CD device comprises first and second substrates 500 and 600 that are separated from each other and are provided with preset distance, be clipped in the liquid crystal layer 700 between first and second substrates 500 and 600, and optical sensor 800, this optical sensor 800 is formed on various piece on first substrate 500 and sentences when light incides on the optical sensor 800 sensing direct capacitance (in the qualification of this insertion " direct capacitance ") and export electric signal.In addition, sensor 800 is formed on the each several part of second substrate, 600 peripheral belows.Optical sensor 800 is according to the change that is incident on the external light intensity sensing direct capacitance on the optical sensor 800.
As shown in Figure 3A, many grid lines 501 and many data lines 502 are arranged on first substrate 500 mutually across to limit a plurality of pixel regions.Grid pad portion 501a is formed on the place, end of every grid line in many grid lines 501, and data pads part 502a is formed on the place, end of every data line in many data lines 502.Grid pad portion 501a comprises a plurality of grid pads, and data pads part 502a comprises a plurality of data pads.Each pad portion 501a and 502a are electrically connected with printed circuit board (PCB) " PCB " (not shown).PCB forms by carrier band (TAB) technology that bonds automatically for utilizing carrier band encapsulation (TCP).
Then, shown in Fig. 3 B, optical sensor 800 comprises bottom electrode 810, top electrode 830 and is arranged on dielectric layer 820 between two substrates 810 and 830.On first substrate 500, form bottom electrode 810, and comprising formation first insulation course 510 on first substrate 500 of bottom electrode 810 subsequently.Dielectric layer 820 is formed on the part place of corresponding bottom electrode 810 on first insulation course 510.Second insulation course 520 is formed on first substrate 500 that comprises dielectric layer 820.Top electrode 830 is formed on the part place of corresponding dielectric layer 820 on second insulation course 520.On top electrode 830 dielectric layer 820 and the bottom electrode 810.
Bottom electrode is formed by conductive material.Dielectric layer 820 forms by having the material of specific inductive capacity with the character of incident light intensity variation thereon.In addition, dielectric layer 820 is formed by amorphous silicon.Top electrode 830 is formed as indium tin oxide (ITO) or indium-zinc oxide (IZO) by transparent conductive material, makes light transmission to pass dielectric layer 820.
In exemplary light sensor 800, when the energy of the light that is radiated at amorphous silicon increased, the specific inductive capacity of amorphous silicon reduced.Therefore, the electrostatic capacitance of optical sensor 800 reduces.In this manner, optical sensor 800 output electric signal are backlight to control.
Especially, when around the second exemplary L CD device bright, optical sensor 800 increases from the light intensity that sends backlight, and liquid crystal board becomes brighter.On the other hand, when around the light of the second exemplary L CD device when dark, optical sensor 800 reduces the light intensity that sends backlight, and liquid crystal board becomes darker.Because the brightness around optical sensor 800 sensings reduces power consumption backlight to control brightness backlight.Therefore, can make the total power consumption minimum of the second exemplary L CD device.
Although do not illustrate especially among Fig. 3 A and Fig. 3 B, between many grid lines 501 and many data lines 502, accompany first insulation course 510.First insulation course 510 is formed by the lamination of the oxide skin(coating) of the nitride layer/silicon of the oxide skin(coating) of the nitride layer of silicon, silicon or silicon.
Shown in Fig. 3 B, at least one thin film transistor (TFT) " Tr " is formed on each infall of many grid lines 501 and many data lines 502.Thin film transistor (TFT) " Tr " comprises from every of many grid lines 501 grid of telling 503, is formed on part the semiconductor layer 504 on first insulation course 510 corresponding with grid 503, and is formed on source/ drain 505a, 505b on the semiconductor layer 504.Grid 503 is formed by the conductive material identical with bottom electrode 810.Semiconductor layer 504 comprises active layer 504a that is formed by amorphous silicon and the ohmic contact layer 504b that is formed by doped amorphous silicon.
Simultaneously, color filter 620 and black matrix 610 are formed on second substrate 600.Black matrix 610 forms the covering pixel region.Black matrix 610 forms the outer peripheral areas that extends to second substrate 600.Form the difference in height that coat 630 produces with color compensating filter 620 and black matrix 610.Transparent common electrode 640 is formed on the coat 630.
Shown in Fig. 3 B, form the opening of expose portion first substrate 500 in each outer part office of black matrix 610.Optical sensor 800 places the below of this opening, and exterior light can be radiated on the optical sensor 800.Although above-mentioned second illustrative embodiments places black matrix 610 belows with optical sensor 800, the position of optical sensor 800 is not limited to this.
Fig. 4 A to Fig. 4 E is the sectional view of second example procedure that shows the LCD device of manufacturing second illustrative embodiments according to the present invention.With reference to Fig. 4 A, prepare first substrate 500.On first substrate 500, form first conductive layer and subsequently to its composition to form grid 503 and bottom electrode 810.First conductive layer can be formed by sputtering method or vacuum deposition method.In addition, first conductive layer can be formed by the alloy of Al, Mo, Cu, AlNd, Ti, Ca, Ni or each element.
Then, shown in Fig. 4 B, the part place of corresponding grid 501 and bottom electrode 810 forms semiconductor layer 504 and dielectric layer 820 respectively on first insulation course 510.At this moment, can form semiconductor layer 504 and dielectric layer 820 by CVD method or sputtering method.In addition, utilize the composition operation of half-tone mask or diffracting mask to form semiconductor layer 504 and dielectric layer 820 simultaneously.
Then, shown in Fig. 4 C, on the entire upper surface of first substrate 500 that comprises semiconductor layer 504 and dielectric layer 820, form second conductive layer.After this, form source/drain 505a/505b on the semiconductor layer 504 by being patterned at.Second conductive layer can be formed by the alloy of Al, Mo, Cu, AlNd, Ti, Ca, Cu or each element.Second conductive layer can form by sputtering method or vacuum deposition method.
With reference to Fig. 4 D, second insulation course 520 is formed on the entire upper surface of first substrate 500 that comprises thin film transistor (TFT) " Tr " and dielectric layer 820.Second insulation course 520 can be formed by the lamination of the oxide skin(coating) of the nitride layer/silicon of the oxide skin(coating) of the nitride layer of silicon, silicon or silicon.At this moment, can form second insulation course 520 by CVD method or sputtering method.The contact hole of the part drain electrode 505b of exposed film transistor " Tr " is defined as and runs through second insulation course 520.
The 3rd conductive layer is formed on the entire upper surface of first substrate 500 that comprises thin film transistor (TFT) " Tr ", and subsequently its composition is formed pixel electrode 506 and top electrode 830 with the various piece place on second insulation course 520.Pixel electrode 506 is formed in each pixel region and by the contact hole that limits and is electrically connected with thin film transistor (TFT) " Tr ".The 3rd conductive layer is formed as indium tin oxide (ITO) or indium-zinc oxide (IZO) by transparent conductive material.The 3rd conductive layer can form by sputtering method or vacuum deposition method.
Then, shown in Fig. 4 E, prepare second substrate 600 that is formed with color filter 620 and black matrix 610 on it.In addition, on color filter 620 and black matrix 610, form coat 630.On coat 630, form transparent common electrode 640.Public electrode 640 is formed as indium tin oxide (ITO) or indium-zinc oxide (IZO) by transparent electrode material.
According to Fig. 3 A to 4E, be formed on optical sensor 800 sensing outside light intensity on first substrate 500 to control brightness backlight.Because optical sensor 800 is by being exposed to external environment condition through being defined as the opening that runs through black matrix 610, so light can directly be incident on the optical sensor 800.Therefore, can suitably control the total power consumption of exemplary L CD device.In addition, because optical sensor 800 is formed in the non-display area on first substrate 500, so the size of optical sensor and quantity do not have particular restriction.
As mentioned above, according to the present invention, the brightness around the photosensor senses to be controlling brightness backlight, and then controls power consumption backlight and the further total power consumption of control LCD.Exterior light because forming, optical sensor is exposed to surrounding environment, so can directly be incident on the optical sensor.Therefore, can determine correct brightness on every side.In addition, the size of optical sensor and quantity do not have particular restriction.Improved the sensitivity of optical sensor.
It will be appreciated by those skilled in the art that under the situation that does not break away from the spirit or scope of the present invention, can carry out various modifications and variations liquid crystal display device and manufacture method thereof.Therefore, this invention is intended to cover modification provided by the invention and modification, this modification and modification are included in the scope of claims and equivalent thereof.
Claims (22)
1. liquid crystal display device comprises:
First substrate;
Second substrate;
Be clipped in the liquid crystal layer between first substrate and second substrate; And
Optical sensor, be formed on be used for sense capacitance on first substrate in case output electric signal, make electric capacity change with light intensity.
2. liquid crystal display device according to claim 1 is characterized in that, also comprises being arranged on the substrate trailing flank and its brightness backlight by optical sensor control.
3. liquid crystal display device according to claim 1 is characterized in that optical sensor comprises:
Be formed on the bottom electrode on first substrate;
Dielectric layer, it forms the bottom electrode top and has the characteristic of the specific inductive capacity of dielectric layer with the light intensity variation; And
Be formed on the top electrode of dielectric top.
4. liquid crystal display device according to claim 3 is characterized in that dielectric layer comprises amorphous silicon.
5. liquid crystal display device according to claim 3 is characterized in that, also comprises first insulation course that is formed between bottom electrode and the dielectric layer.
6. liquid crystal display device according to claim 5 is characterized in that, first insulation course comprises the nitride layer of oxide skin(coating), silicon of silicon or the lamination that is made of the nitride layer of the oxide skin(coating) of silicon and silicon.
7. liquid crystal display device according to claim 3 is characterized in that, also comprises second insulation course that is formed between top electrode and the dielectric layer.
8. liquid crystal display device according to claim 7 is characterized in that, second insulation course comprises the nitride layer of oxide skin(coating), silicon of silicon or the lamination that is made of the nitride layer of the oxide skin(coating) of silicon and silicon.
9. liquid crystal display device according to claim 3 is characterized in that top electrode is formed by transparent conductive material.
10. liquid crystal display device according to claim 3 is characterized in that, top electrode one of comprises among indium tin oxide ITO or the indium-zinc oxide IZO at least.
11. liquid crystal display device according to claim 1 is characterized in that, also comprises being arranged on the first substrate trailing flank and its brightness backlight by optical sensor control.
12. a method of making LCD, this method comprises:
On first substrate, form thin film transistor (TFT), the pixel electrode that is electrically connected with thin film transistor (TFT) and optical sensor;
Second substrate that is formed with color filter and black matrix on it is provided; And
Between first substrate and second substrate, form liquid crystal layer.
13. method according to claim 12 is characterized in that, also comprises backlight, first and second substrates of assembling, support frame and top frame to make liquid crystal display device, brightness wherein backlight is controlled by optical sensor.
14. method according to claim 12 is characterized in that, the electric capacity that photosensor senses changes with light intensity is also exported electric signal.
15. method according to claim 14 is characterized in that, the step of described formation optical sensor comprises:
On first substrate, form bottom electrode;
Above bottom electrode, form dielectric layer, and dielectric layer have the characteristic of the specific inductive capacity of dielectric layer with the light intensity variation; And
Above dielectric layer, form top electrode.
16. method according to claim 15 is characterized in that, the step of described formation optical sensor also is included in and forms first insulation course between bottom electrode and the dielectric layer.
17. method according to claim 15 is characterized in that, the step of described formation optical sensor also is included in and forms second insulation course between top electrode and the dielectric layer.
18. method according to claim 15 is characterized in that, utilizes amorphous silicon to form dielectric layer by chemical vapor deposition or sputtering method.
19. method according to claim 15 is characterized in that, top electrode is also formed by splash or vacuum deposition method by transparent conductive material.
20. method according to claim 15 is characterized in that, top electrode one of comprises among indium tin oxide ITO or the indium-zinc oxide IZO at least.
21. a method of making LCD, this method comprises:
Decide viewing area and non-display area at first substrate and second ceiling substrate;
Form optical sensor in the non-display area of first substrate, this sensor is according to the light intensity output signal;
In the non-display area of first substrate or second substrate, form seal pattern; And
Utilize bonding first substrate of seal pattern and second substrate and between the viewing area of first substrate and second substrate, form liquid crystal layer.
22. a method of making LCD, this method comprises:
Decide viewing area and non-display area at first substrate and second ceiling substrate, wherein in the viewing area of first substrate, be formed with a plurality of pixel regions;
Form thin film transistor (TFT) and optical sensor on first substrate, wherein thin film transistor (TFT) is formed in each pixel region and optical sensor is formed in the non-display area of every part, makes optical sensor according to the light intensity output signal; And
Bonding first substrate and second substrate also form liquid crystal layer between the viewing area of first substrate and second substrate.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2006-0060096 | 2006-06-30 | ||
| KR1020060060097A KR100912188B1 (en) | 2006-06-30 | 2006-06-30 | Liquid crystal display device and fabricating method for the same |
| KR1020060060096A KR20080001769A (en) | 2006-06-30 | 2006-06-30 | Liquid crystal display device and fabricating method of the same |
| KR1020060060097 | 2006-06-30 | ||
| KR1020060060096 | 2006-06-30 | ||
| KR10-2006-0060097 | 2006-06-30 |
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| CN101097335A true CN101097335A (en) | 2008-01-02 |
| CN101097335B CN101097335B (en) | 2010-05-19 |
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| CN2006101608984A Expired - Fee Related CN101097335B (en) | 2006-06-30 | 2006-12-08 | Liquid crystal display device and method of fabricating the same |
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| KR (1) | KR20080001769A (en) |
| CN (1) | CN101097335B (en) |
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| KR20080001769A (en) | 2008-01-04 |
| CN101097335B (en) | 2010-05-19 |
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