CN101092742A - Method for preparing no cut crystallitic polysilicon chip in use for high performance solar batteries - Google Patents
Method for preparing no cut crystallitic polysilicon chip in use for high performance solar batteries Download PDFInfo
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- CN101092742A CN101092742A CN 200710014346 CN200710014346A CN101092742A CN 101092742 A CN101092742 A CN 101092742A CN 200710014346 CN200710014346 CN 200710014346 CN 200710014346 A CN200710014346 A CN 200710014346A CN 101092742 A CN101092742 A CN 101092742A
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Abstract
This invention relates to a cutting-free method for preparing microcrystalline polysilicon sheets used in high-performance solar cell. The method comprises: supplying silicon raw material, washing and purifying to obtain high-purity silicon, adding a dopant, placing in an electrically controlled high-temperature melting furnace without dust, heating to 1400-1500 deg.C to absolutely melt silicon, processing into microcrystalline polysilicon sheets (thickness = 0.2-0.4 mm) via uniform stretching or molten-tin flotation method, and processing to obtain high-purity microcrystalline polysilicon sheets with uniform length and width. The method has such advantages as low wastage, high control precision and high product quality.
Description
Technical field:
The present invention relates to a kind of method that adopts horizontal stretch technology directly to prepare crystallitic polysilicon chip in use for high performance solar batteries, particularly a kind of processing method that adopts the melt level stretching technique preparation of not having cutting to be used for the high purity crystallitic polysilicon chip of solar cell.
Background technology:
Because worldwide environmental degradation and oil, coal resources is day by day exhausted, the clean clean energy more and more is subject to people's attention and favors.Particularly the collection of sun power with utilize technology and equipment more and more to be used by people, its research and development heliotechnics and equipment have formed annual value of production nearly 10 just in develop rapidly
10The new high-tech industry of dollar magnitude.The development of solar energy acquisition technology reduces the cost of sun power greatly, and the average price at present every peak watt tens of dollars before the more than ten years drops to about 3 dollars.In the absorption of sun power, gather and utilize in the technology, solar cell becomes, and sun power the safest, most convenient utilizes form.
At present, the major technique raw material problem of solar cell is the cost impact that the cost of the purity of silicon materials and cost problem, particularly solar cell that technology of preparing is brought directly is subjected to silicon raw material and the processing technology thereof used.The silicon chip that uses in solar cell mainly is at present to adopt the cut mechanically technology to be processed into traditional major diameter single crystal silicon chip, and this working method exists the cutting loss up to 50%, the high outstanding shortcoming of cutting processing comprehensive cost.
Summary of the invention:
The objective of the invention is to overcome that patterning method prepares the loss height that the high purity crystallitic polysilicon chip exists in the existing solar cell preparation process, the processing step complexity, the shortcoming that comprehensive cost is difficult to reduce, seeking to relate to the standardized kind of structure adopts fusion drawn technology processing and preparing to become the high purity crystallitic polysilicon chip to be used for the preparation method of solar cell raw material, this method realizes that by precise electronic control techniques equipment the processing draw speed is controlled, the temperature field is controlled, grain size is controlled, the crystal orientation is controlled, wafer thickness is controlled and degree of mixing is controlled, its crystallitic polysilicon chip thickness of making is applicable to preparation big area high performance solar batteries at 0.2～0.4mm.
In order to realize the foregoing invention purpose, the inventive method is cleaned the silicon raw material earlier and purified is the high purity silicon of 9999 purity; Place the electric-controlled type high-temperature smelting pot under dustfree environment, to be heated to 1400～1500 ℃ of high temperature high purity silicon or the doping agent boron that adds conventional magnitude again, silicon is melted fully; Then melted silicon control stretching speed in stretcher is evenly stretched and make the crystallitic polysilicon chip of 0.2～0.4mm thickness, or adopt tin melt face float glass process technology evenly to make the crystallitic polysilicon chip of 0.2～0.4mm thickness; At last the silicon wafer made is processed into length by the specification arrangement and width meets the high purity crystallitic polysilicon flake products that uses specification.
The inventive method is in the horizontal stretch process of cooling, temperature gradient field by precision control, the average crystal grain size that makes the crystallization silicon chip is in micron dimension, and splits at the polycrystalline crystalline substance and to be full of silicon microcrystal grain in the gap, to satisfy the demand of high performance solar batteries to silicon materials.Employing precise electronic control techniques influences the crystallization crystal orientation of crystal grain, to satisfy the processing requirement of finishing the hypersorption of matte no reflection events in cell preparation.The present invention is when adding the doping agent boron of conventional magnitude, and the ratio adding in conventional solar cells quantitative criteria commonly used makes in its silicon and the boron mixture, and the unit atomicity of boron is 10
17～10
19Order magnitude range in.
Adopt the modern electronic technology operating device can realize the tolerance range of various machined parameters and mass parameter effectively in the invention process process, particularly can effectively realize the high precision processing quality by the accurate control stretching speed of electronic technology, speed of cooling, temperature field temperature uniformity, by parameters such as electron controls technology device control crystallographic grain size, crystal orientation, stretching thickness and degree of mixing, can effectively guarantee the mass parameter of products made thereby.
The inventive method compared with prior art has the processing technology maturation, processing loss is few, control accuracy is good, the excellent outstanding advantage of quality product, particularly done bigger further improvement on the basis of stretching technique and the float glass process technology mature technology method of formation routine in the special glass preparation, this method has been applied to the crystallitic polysilicon chip preparation process and adopts the hyundai electronics accurate control technique can make the product of making be better than prior art products fully.
Embodiment:
Enforcement of the present invention under laboratory condition preparation to have finished thickness be 0.3mm, the processing of the crystallitic polysilicon chip that length and width are controlled, its processing step is: will be the high purity silicon of 9999 purity through the silicon feedstock purification of chemistry or physical purification earlier; With high purity silicon or add an amount of doping agent boron and place the electric-controlled type high-temperature smelting pot more than even heating to 1400～1500 under the dustfree environment ℃, silicon is melted fully again; Then melted silicon control stretching speed in stretcher is evenly stretched and make the crystallitic polysilicon chip of 0.2～0.4mm thickness, or adopt the evenly floating crystallitic polysilicon chip of making 0.2～0.4mm thickness of tin melt face float glass process technology; At last with the silicon wafer made on request specification and length is processed in the size arrangement and width meets the high purity crystallitic polysilicon flake products that uses specification.
Embodiment 1:
In commercially available silicon wafer product, choose 1000 gram purity and be higher than 9999 silicon raw material, be placed in the high-temperature crucible and be heated to 1420 ℃ under the thermostatic control condition, adopt precise electronic control stretching equipment, control at electronic temperature controller that down fused silicon liquid high speed pulling to be become thickness be 0.3mm, width is decline a brilliant polysilicon chip and be organized into stand-by product of the lengthy motion picture of 10cm.
Embodiment 2:
Choosing 1500 gram purity in commercially available silicon wafer product is higher than 9999 silicon raw material and measures adding doping agent boron routinely, be placed in the high-temperature crucible and be heated to 1450 ℃ under the thermostatic control and dustless condition, adopting conventional liquid level float glass process technology electronic temperature controller to control down the floating system of fused melted silicon is drawn into thickness is 0.35mm, and width is decline a brilliant polysilicon chip and be organized into stand-by product of the lengthy motion picture of 6cm.
The silicon wafer product of above two embodiment preparation is used for the preparation of solar cell, and its raw materials cost reduces more than 50%, and comprehensive preparation cost reduces more than 35%, and made battery efficiency can reach 10～18%.
Claims (2)
1. a crystallitic polysilicon chip in use for high performance solar batteries method for preparing no cut is characterized in that earlier the silicon raw material being cleaned purification is the high purity silicon of 9999 purity; Place the electric-controlled type high-temperature smelting pot under dustfree environment, to be heated to 1400～1500 ℃ high purity silicon or the doping agent boron that adds conventional magnitude again, silicon is melted fully; Then melted silicon control stretching speed in stretcher is evenly stretched or adopt tin melt face float glass process technology to make the crystallitic polysilicon chip of 0.2～0.4mm thickness; At last the silicon wafer made is processed into length by the specification arrangement and width meets the high purity crystallitic polysilicon flake products that uses specification.
2. crystallitic polysilicon chip in use for high performance solar batteries method for preparing no cut according to claim 1, it is characterized in that in the horizontal stretch process of cooling, by the controlled temperature gradient fields, make crystallization silicon chip average crystal grain size in micron dimension, split at the polycrystalline crystalline substance and be full of silicon microcrystal grain in the gap; Influence the crystallization crystal orientation of crystal grain with the electronics accurate control technique.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710014346 CN101092742A (en) | 2007-04-20 | 2007-04-20 | Method for preparing no cut crystallitic polysilicon chip in use for high performance solar batteries |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710014346 CN101092742A (en) | 2007-04-20 | 2007-04-20 | Method for preparing no cut crystallitic polysilicon chip in use for high performance solar batteries |
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| CN101092742A true CN101092742A (en) | 2007-12-26 |
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| CN 200710014346 Pending CN101092742A (en) | 2007-04-20 | 2007-04-20 | Method for preparing no cut crystallitic polysilicon chip in use for high performance solar batteries |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013007108A1 (en) * | 2011-07-11 | 2013-01-17 | 浙江碧晶科技有限公司 | Method for growing thin-plate silicon crystal |
| CN106676630A (en) * | 2016-12-29 | 2017-05-17 | 常州大学 | Silicon wafer lifting device and control method thereof |
-
2007
- 2007-04-20 CN CN 200710014346 patent/CN101092742A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013007108A1 (en) * | 2011-07-11 | 2013-01-17 | 浙江碧晶科技有限公司 | Method for growing thin-plate silicon crystal |
| CN106676630A (en) * | 2016-12-29 | 2017-05-17 | 常州大学 | Silicon wafer lifting device and control method thereof |
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Open date: 20071226 |