CN101079416A - Light emitting unit - Google Patents
Light emitting unit Download PDFInfo
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- CN101079416A CN101079416A CNA2006100830169A CN200610083016A CN101079416A CN 101079416 A CN101079416 A CN 101079416A CN A2006100830169 A CNA2006100830169 A CN A2006100830169A CN 200610083016 A CN200610083016 A CN 200610083016A CN 101079416 A CN101079416 A CN 101079416A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Abstract
The invention discloses a luminous unit, which consists of luminous diode packing mode and optical film, wherein the luminous diode packing mode contains bearing body, first crystal grain and second crystal grain; the first and second crystal grains are set at the bearing body; the luminous diode packing mode emits a goal wave peak wavelength; the first crystal grain possesses a first wave peak wavelength, which is longer than the goal wave peak wavelength; the second crystal grain possesses a second wave peak wavelength, which is shorter than goal wave peak wavelength; the first and second wave peak lengths belong to the same color system with a first distance between the first and second crystal grains; the optical film is adjacent to the luminous diode packing mode; the optical film possesses a visible area; a second distance is formed between the luminous diode packing mode and visible area or rim of visible area; the first distance is shorter than the second distance.
Description
Technical field
The present invention relates to a kind of luminescence unit (LIGHT EMITTING UNIT), particularly relate to a kind of luminescence unit with light-emitting diode.
Background technology
Light-emitting diode is by the made luminescence component of semi-conducting material, and assembly has two electrode terminals, applies voltage between terminal, feeds minimum voltage, via the combination in electronics electricity hole, then dump energy can be excited with the form of light and disengage.
Advantages such as be different from general incandescent lamp bulb, light-emitting diode belongs to chemiluminescence, and it is low to have power consumption, and assembly life-span is long, need not warm up the lamp time, reaction speed is fast.Add that its volume is little, vibration resistance, be fit to volume production, the demand on the fit applications is made the assembly of minimum or array type easily.Light-emitting diode generally is used on the indicating device and display unit of illumination, information, communication, consumption electronic products at present, becomes significant components indispensable in the daily life.Recently, light-emitting diode more be employed as LCD (Liquid crystal Display, LCD) in the backlight of backlight module, and the trend that replaces traditional cathode fluorescent tube is gradually arranged.
See also shown in Figure 1ly, with the backlight module 1 of light-emitting diode, have a housing 11, at least one optical thin film 12, a loading plate 13 and plural LED encapsulation module 20 in the prior art as light source.Wherein, plural LED encapsulation module 20 is to be arranged on the loading plate 13.
See also Fig. 2 and shown in Figure 3, the substrate 211 of light-emitting diode component 21 is to be arranged at radiating seat 212 in order to heat radiation, and crystal grain 213 is arranged at substrate 211 and is engaged to lead frame 214 via routing, so that crystal grain (Die) 213 electrically connects with other assembly by lead frame 214.By among the figure as can be known, after the crystal grain 213 of light-emitting diode is arranged at substrate 211 earlier, is installed in again on the radiating seat 212 and finishes encapsulation.Add the processing procedure that routing engages, so the manufacturing process of light-emitting diode component 21 is quite complicated.
Yet, crystal grain 213 in the LED encapsulation module normally utilizes crystalline substance of heap of stone (Epitaxy) processing procedure of manufacture of semiconductor to make, and wherein, crystal grain 213 luminous wavelength are that the material by epitaxial layer decides, brilliant processing procedure therefore of heap of stone is in the light-emitting diode processing procedure, the some that cost is the highest.
Though in manufacture process, wafer is so that whole crystal grain 213 sends the light of a color of object through identical processing procedure control.But same batch of plural crystal grain 213 that manufacturing is come out, or even the plural crystal grain 213 on the same wafer usually all may have sizable wavelength change (wavelength length variation).The color of object of for example same batch crystal grain 213 is a green, but the long 500nm of being of the light wave spike that one of them crystal grain of possibility sends, and the light wave spike length that another crystal grain but may send is 506nm.
Yet, in some application, for example be in the senior car light of backlight liquid crystal display module or automobile, often need the almost consistent LED encapsulation module of plural wavelength.Therefore, the crest wavelength of crystal grain can be strict with.That is to say,, have only and fall into a narrow and small crest wave-length coverage person, just meet dealer's quality keyholed back plate standard, can be chosen to non-defective unit and be applied in the product no matter be same batch of plural crystal grain of producing or the plural crystal grain on the same wafer.Other crystal grain outside wave-length coverage often becomes defective products, can't use.Thus, crystal grain all on the wafer then can't use fully, and the crystal grain utilance is not high, make that the production cost of LED encapsulation module is high, and then make that the cost of backlight module is also quite expensive.
This shows that above-mentioned existing luminescence unit obviously still has inconvenience and defective in structure and use, the LED crystal particle utilance on the wafer is not high, and causes the backlight module production cost high, therefore demands urgently further being improved.In order to solve the problem of above-mentioned existence, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, and common product does not have appropriate structure to address the above problem, this obviously is the problem that the anxious desire of relevant dealer solves.Therefore how to found a kind of novel luminescence unit, just becoming the current industry utmost point needs improved target.
Because the defective that above-mentioned existing luminescence unit exists, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, and the utilization of cooperation scientific principle, actively studied innovation, in the hope of founding a kind of novel luminescence unit, can improve general existing luminescence unit, make it have more practicality.Through constantly research, design, and, create the present invention who has practical value finally through after studying sample and improvement repeatedly.
Summary of the invention
Main purpose of the present invention is, overcome the defective that existing luminescence unit exists, and provide a kind of novel luminescence unit, technical problem to be solved is to make it comprise at least one LED encapsulation module, LED encapsulation module comprises that two LED crystal particle are long to send an object wave spike, improve the utilance of the LED crystal particle on the wafer, and reduce the production cost of backlight module, thereby be suitable for practicality more.
The object of the invention to solve the technical problems realizes by the following technical solutions.A kind of luminescence unit according to the present invention's proposition, it comprises: a LED encapsulation module, comprise a supporting body, one first crystal grain and one second crystal grain, this first crystal grain and this second crystal grain are arranged at this supporting body, this LED encapsulation module is long in order to send an object wave spike, this first crystal grain has a primary peak wavelength, this primary peak wavelength is long greater than this object wave spike, this second crystal grain has a secondary peak wavelength, this secondary peak wavelength is long less than this object wave spike, this primary peak wavelength and this secondary peak wavelength are to belong to same colour system, and wherein this first crystal grain and this second crystal grain are at a distance of one first distance; An and optical thin film, be adjacent to this LED encapsulation module, this optical thin film has a visible range, this LED encapsulation module and this visible range or have a shortest second distance with the edge of this visible range, and this first distance is less than this second distance.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid luminescence unit, wherein said first crystal grain and this second crystal grain are the whiles or not luminous simultaneously.
Aforesaid luminescence unit, the difference of wherein said primary peak wavelength and this secondary peak wavelength is less than 50nm.
Aforesaid luminescence unit, the difference of wherein said primary peak wavelength and this secondary peak wavelength is less than 30nm.
Aforesaid luminescence unit, the difference of wherein said target wavelength and this primary peak wavelength is not equal to the difference of this target wavelength and this secondary peak wavelength.
Aforesaid luminescence unit, the difference of wherein said target wavelength and this primary peak wavelength equals the difference of this target wavelength and this secondary peak wavelength.
Aforesaid luminescence unit, wherein said first crystal grain is different with the luminous intensity of this second crystal grain.
Aforesaid luminescence unit, wherein said object wave spike is about between between the 615nm to 650nm.
Aforesaid luminescence unit, wherein said object wave spike is about between between the 515nm to 555nm.
Aforesaid luminescence unit, wherein said object wave spike is about between between the 455nm to 485nm.
Aforesaid luminescence unit, wherein said LED encapsulation module more comprise one the 3rd crystal grain, and it has one the 3rd crest wavelength, and this primary peak wavelength, this secondary peak wavelength and the 3rd crest wavelength are to belong to this colour system.
Aforesaid luminescence unit, wherein said the 3rd crest wavelength is greater than this primary peak wavelength, and the difference of the 3rd crest wavelength and this secondary peak wavelength is less than 50nm.
Aforesaid luminescence unit, wherein said the 3rd crest wavelength is less than this secondary peak wavelength, the difference of this primary peak wavelength and the 3rd crest wavelength is less than 50nm.
Aforesaid luminescence unit, wherein said the 3rd crystal grain and this first crystal grain are at a distance of one the 3rd distance, and the 3rd distance is less than this second distance.
Aforesaid luminescence unit, it more comprises: another LED encapsulation module is to be adjacent to this LED encapsulation module.
By technique scheme, luminescence unit of the present invention has following advantage at least: comprise an at least one LED encapsulation module and an optical thin film according to a kind of luminescence unit of the present invention, wherein LED encapsulation module comprises that two LED crystal particle are long to send an object wave spike.Compared with prior art, LED encapsulation module has first crystal grain and second crystal grain, and primary peak wavelength and secondary peak wavelength are to belong to same colour system, first crystal grain and second crystal grain are at a distance of one first distance, and LED encapsulation module and visible range or have a shortest second distance with the edge of visible range, wherein first distance is less than second distance.Thus, luminescence unit of the present invention can be by selecting the plural crystal grain with suitable coupling wavelength, just capable of being combinedly goes out the long plural crystal grain of object wave spike, plural plural crystal grain is packaged together and forms LED encapsulation module.Therefore, the package module of each light-emitting diode can make human eye in object wave spike strong point, experiences just like two luminous intensities with the long light-emitting diode of object wave spike.In addition, by the process of selecting coupling crystal grain, the encapsulation dealer scope that can relax the crest wavelength of non-defective unit crystal grain, and then can promote the crystal grain utilance of same wafer or same batch of wafer, and the material of reduction luminescence unit and reduce the waste of former material.
In sum, the luminescence unit of novelty of the present invention has improved the utilance of the LED crystal particle on the wafer, and has reduced the production cost of backlight module.The present invention has above-mentioned plurality of advantages and practical value, no matter it all has bigger improvement on product structure or function, obvious improvement is arranged technically, and produced handy and practical effect, and more existing luminescence unit has the effect of enhancement, thereby being suitable for practicality more, and having the extensive value of industry, really is a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Fig. 1 is with the schematic diagram of light-emitting diode as backlight module in the prior art.
Fig. 2 is a schematic diagram of the LED encapsulation module in the backlight module in the prior art.
Fig. 3 is the generalized section along the package module of the light-emitting diode of Fig. 2 straight line A-A '.
Fig. 4 is a schematic diagram of luminescence unit of the present invention.
Fig. 5 is the generalized section along the LED encapsulation module of the straight line B-B ' among Fig. 4.
Fig. 6 is another schematic diagram of LED encapsulation module of the present invention.
Fig. 7 is another schematic diagram of LED encapsulation module of the present invention.
Fig. 8 is another schematic diagram of LED encapsulation module of the present invention.
Fig. 9 is in the LED encapsulation module of the present invention, a schematic diagram of first crystal grain and second spectrum of wavelengths that crystal grain sends, and wherein, the difference of first crystal grain and target wavelength equals the difference of second crystal grain and target wavelength.
Figure 10 is in the LED encapsulation module of the present invention, another schematic diagram of first crystal grain and second spectrum of wavelengths that crystal grain sends, and wherein, the difference of first crystal grain and target wavelength is not equal to the difference of second crystal grain and target wavelength.
Figure 11 is another schematic diagram for luminescence unit of the present invention, and wherein luminescence unit is the backlight module of straight-down negative.
Figure 12 is another schematic diagram for luminescence unit of the present invention, and wherein luminescence unit is the backlight module of side-light type.
Figure 13 is another schematic diagram for LED encapsulation module of the present invention, and wherein LED encapsulation module is to have three LED crystal particle.
1: backlight module 11: housing
12: optical thin film 13: loading plate
20: LED encapsulation module 21: light-emitting diode component
211: substrate 212: radiating seat
213: crystal grain 214: lead frame
30: luminescence unit 30 ': luminescence unit
40: LED encapsulation module 40 ': LED encapsulation module
41: supporting body 41 ': supporting body
43: the second crystal grain of 42: the first crystal grain
44: inside conductor 45: adhesive material
46: 47: the three crystal grain go between
50: optical thin film 50 ': optical thin film
60: housing 70: fixed head
D1: first apart from d2: second distance
D3: the 3rd distance D: crystal grain
V: visible range λ t: the object wave spike is long
λ 1: primary peak wavelength X 2: the secondary peak wavelength
3: the three crest wavelength of λ A-A ': straight line
B-B ': straight line
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, to its embodiment of luminescence unit, structure, feature and the effect thereof that foundation the present invention proposes, describe in detail as after.
At first, see also Fig. 4 to shown in Figure 11, with the luminescence unit of explanation first embodiment of the invention.
See also shown in Figure 4ly, luminescence unit 30 mainly comprises a LED encapsulation module 40 and an optical thin film 50.In the present embodiment, luminescence unit 30 is to be example with a straight-down negative luminescence unit 30.
See also shown in Figure 5ly, it is the generalized section along the LED encapsulation module 40 of the straight line B-B ' among Fig. 4.LED encapsulation module 40 comprises a supporting body 41, one first crystal grain 42 and one second crystal grain 43.Wherein, LED encapsulation module 40 is in order to sending an object wave peak wavelength X t (target peak wavelength), object wave spike length can for example be between the ruddiness between the 615nm to 650nm, between the green glow between the 515nm to 555nm or crest wavelength approximately between the blue light between the 455nm to 485nm.That is to say that object wave spike length can be stipulated specification voluntarily by the dealer, the crest wavelength that receives for LED encapsulation module 40 relief human eyes.And LED encapsulation module 40 can utilize the persistence of vision phenomenon of human eye, is simultaneously luminous or not luminous simultaneously no matter make first crystal grain 42 and second crystal grain 43, and it is long all to obtain the object wave spike.
Certainly, the object wave spike of LED encapsulation module 40 is long also can be defined as respectively between first ruddiness (R1) between the 620.5nm to 645.0nm, crest wavelength approximately between second ruddiness (R2) between the 612.5nm to 620.5nm, crest wavelength approximately between first green glow (G1) between the 520nm to 550nm, crest wavelength approximately between second green glow (G2) between the 490nm to 520nm, crest wavelength approximately between first blue light (B1) between the 460nm to 490nm or crest wavelength approximately between second blue light (B2) between the 440nm to 460nm.
See also shown in Figure 5ly, first crystal grain 42 and second crystal grain 43 are arranged at supporting body 41 respectively.Wherein, supporting body 41 can be a substrate or a lead frame.In the present embodiment, the encapsulation form of light-emitting diode and the material of substrate are not limited.For example, when supporting body 41 is substrate, can be transparency carrier (for example being glass substrate), also can be opaque substrate.And the pattern of encapsulation can be as among Fig. 5 being surface encapsulation (Surface Mounting Device; SMD) form; first crystal grain 42 and second crystal grain 43 also can electrically carry out the communication of signal with the external world by the inside conductor on substrate (interconnection) 44; and do not need to beat lead-in wire (wire bonding), utilize adhesive material 45 protection first crystal grain 42 and second crystal grain 43 again.Wherein, first crystal grain 42 and second crystal grain 43 also can utilize the form of covering crystalline substance (flip chip) and be installed on supporting body 41.
See also shown in Figure 6ly, certainly, first crystal grain 42 and second crystal grain 43 also can go between (wiring) 46 by plural number and electrically connect with supporting body 41, utilize adhesive material 45 protection first crystal grain 42 and second crystal grain 43 again.
See also shown in Figure 7ly, when supporting body 41 ' was lead frame, then Feng Zhuan pattern then became the form of leaded package (leadframe package).In addition, among Fig. 8, the mode that first crystal grain 42 and second crystal grain 43 also can storehouses is provided with, and cooperates substrate and lead frame to be used as supporting body 41 ' again.
See also Fig. 5 and shown in Figure 9 again, first crystal grain 42 has a primary peak wavelength X 1, and primary peak wavelength X 1 is greater than object wave peak wavelength X t.Second crystal grain 43 has a secondary peak wavelength X 2, and secondary peak wavelength X 2 is less than object wave peak wavelength X t.Wherein, first crystal grain 42 and second crystal grain 43 are the light that belongs to same colour system, and for example first crystal grain 42 and second crystal grain 43 light of greening colour system all for example is green, dark green, and first crystal grain 42 and second crystal grain 43 can be the crystal grain of institute's output on the same wafer.Certainly, but first crystal grain 42 and second crystal grain 43 also can be by different wafers for the same batch of crystal grain of being produced, and in the present embodiment, first crystal grain 42 and second crystal grain 43 are that the crystal grain with same wafer institute output is example.
When selecting crystal grain, need to measure earlier the crest wavelength of each crystal grain, be fit to be packaged together the plural crystal grain that the crest wavelength can match each other to pick out.Wherein, as long as the difference (Δ λ) of the secondary peak wavelength X 2 of the primary peak wavelength X 1 of first crystal grain 42 and second crystal grain 43 can match each other less than 50nm, be placed in the same LED encapsulation module 40.
In the present embodiment, be to be that the LED encapsulation module 40 of 530nm is an example to send object wave peak wavelength X t.Equal the difference of second crystal grain 43 and object wave peak wavelength X t when the long difference of first crystal grain 42 and object wave spike, for example: primary peak wavelength X 1 is to be about 535nm, secondary peak wavelength X 2 is to be about 525nm, and the luminous efficiency of supposing first crystal grain 42 and second crystal grain 43 is when identical, provide identical electric current to first crystal grain 42 and second crystal grain 43, no matter be that first crystal grain 42 and second crystal grain 43 are luminous simultaneously or take turns fast when luminous, human eye is experienced the luminous intensity that object wave spike long value 530nm is presented, and is to be first crystal grain 42 and second crystal grain 43 totalling (shown in the spectrum of wavelengths of dotted line) in the luminous intensity at object wave spike long value 530nm place.That is to say, coupling by wavelength, after first crystal grain 42 and second crystal grain 43 is packaged together, first crystal grain 42 and second crystal grain 43 is capable of being combined to go out object wave peak wavelength X t, making human eye can't differentiate plural intergranule has the wavelength difference, just like take two die package that can send target crest light wavelength lambda t the same together.
Seeing also Fig. 5 and shown in Figure 10, in the present embodiment, is to be that the LED encapsulation module 40 of 530nm is an example to send object wave peak wavelength X t.When the long difference of first crystal grain 42 and object wave spike is a half of the long difference of second crystal grain 43 and object wave spike, for example: primary peak wavelength X 1 is to be about 535nm, secondary peak wavelength X 2 is to be about 520nm, suppose under first crystal grain 42 situation also identical with the luminous efficiency of second crystal grain 43, can promote the curtage value to two times of first crystal grain 42, so that the luminous intensity of first crystal grain 42 is two times of second crystal grain 43.As shown in figure 10, luminous simultaneously or take turns fast when luminous when first crystal grain 42 and second crystal grain 43, human eye is experienced the luminous intensity that object wave spike long value λ t place presents, and is to be first crystal grain 42 and second crystal grain 43 totalling (shown in the spectrum of wavelengths of dotted line) in the luminous intensity at object wave spike long value λ t place.
Under the preferable situation, primary peak wavelength X 1 is less than within the 30nm with the difference of secondary peak wavelength X 2, and the luminous intensity of the object wave spike length that is combined into is stronger, and can form a main crest (main peak).In addition, just the wavelength of first crystal grain 42 and second crystal grain 43 adds the General Logistics Department at last, can't form single main crest, but because the luminance purity of light-emitting diode is higher, human eye still can't pick out the loss on the color saturation (Color Saturation).
See also shown in Figure 4ly again, luminescence unit 30 more can comprise a housing 60 and a fixed head 70, and LED encapsulation module 40 is placed in housing 60 and is arranged at fixed head 70.In the present embodiment, luminescence unit 30 is comprising that plural LED encapsulation module 40 is an example, and certainly, the quantity of LED encapsulation module 40 can be decided according to the actual product design requirement, does not limit at this.In addition, the material of housing 60 can be metal or is plastics, and the size of housing 60 and shape can design according to luminescence unit 30 actual required size and forms, and for example: housing 60 can be a framework, a tabular or other shape.And fixed head 70 is in order to carrying LED encapsulation module 40, and material can be metal or plastics or fixed head 70 and can be a printed circuit board (PCB), and in addition, fixed head 70 also can be the heating panel that has heat sinking function concurrently.
Optical thin film 50 can comprise a diffusion sheet, a light guide plate, a prismatic lens or its combination.In the present embodiment, luminescence unit 30 is to be example with the straight-down negative, and therefore, optical thin film 50 is a diffusion sheet, evenly spreads in order to assist ray.
See also shown in Figure 11, in the LED encapsulation module 40, first crystal grain 42 and second crystal grain 43 are apart from d1 at a distance of one first, optical thin film 50 is to have a visible range V, LED encapsulation module 40 has a shortest second distance d2 with visible range V, first apart from dl less than second distance d2.In the present embodiment, because luminescence unit 30 is to be straight-down negative, therefore, the surface that the distance of visible range V and LED encapsulation module 40 can optical thin film 50 and the distance of LED encapsulation module 40 are calculated.When first apart from d1 less than second distance d2, be that distance is quite near between expression first crystal grain 42 and second crystal grain 43, can carry out the mixed light in the LED encapsulation module 40 earlier, even therefore first crystal grain 42 is childlike identical with the primary waves of second crystal grain 43, but still can send target wavelength by LED encapsulation module 40.And after the 50 diffusion mixing of the light that a plurality of LED encapsulation modules 40 are sent process optical thin film, to form a uniform backlight, offer liquid crystal panel and use.
Then, see also Figure 12 and shown in Figure 13, with the luminescence unit 30 ' of explanation second embodiment of the invention.
See also shown in Figure 12ly, luminescence unit 30 ' is to be example with a side light type back light module, and luminescence unit 30 ' comprises a LED encapsulation module 40 ' and an optical thin film 50 '.
See also shown in Figure 13, in the present embodiment, LED encapsulation module 40 different places among LED encapsulation module 40 ' and first embodiment are, LED encapsulation module 40 ' more comprises one the 3rd crystal grain 47, and the 3rd crystal grain 47 is that to have one the 3rd crest wavelength X, 3, the three crystal grain 47 and first crystal grain 42 and second crystal grain 43 be the light that sends same colour system.For instance, when first crystal grain 42 and second crystal grain 43 all send peach light, the 3rd crystal grain 47 sends wine-colored light, all belongs to the light of red colour system.
When LED encapsulation module 40 ' had three crystal grain, the maximum crest wavelength of crystal grain and the difference of minimum crest wavelength were should be less than 50nm.That is to say that when the 3rd crest wavelength X 3 during greater than primary peak wavelength X 1, the 3rd crest wavelength X 3 is less than 50nm with the difference of secondary peak wavelength X 2.And when the 3rd crest wavelength X 3 during less than secondary peak wavelength X 2, the 3rd crest wavelength X 3 is less than 50nm with the difference of primary peak wavelength X 1.Under the preferable situation, in the plural crystal grain of LED encapsulation module 40 ', the difference of maximum crest wavelength and minimum crest wavelength is should be less than 30nm.
See also shown in Figure 12ly again, in the present embodiment, luminescence unit 30 ' is to be example with the side light type back light module, and therefore, optical thin film 50 ' is a light guide plate, in order to light by the side light inlet after and can penetrate from the exiting surface of light guide plate.
Optical thin film 50 is to have a visible range V, and the edge of LED encapsulation module 40 and visible range V is to have a shortest second distance d2, and the 3rd crystal grain 47 and first crystal grain 42 are apart one the 3rd apart from d3, and the 3rd is less than second distance d2 apart from d3.When the 3rd apart from d3 less than second distance d2, represent that distance is quite near between first crystal grain 42 and the 3rd crystal grain 47, can carry out the mixed light in the LED encapsulation module 40 ' earlier, even therefore the main wavelength of first crystal grain 42, second crystal grain 43 and the 3rd crystal grain 47 is all inequality, but still can send target wavelength by LED encapsulation module 40 '.And single or light that a plurality of LED encapsulation module 40 ' sent to form a uniform backlight, offers liquid crystal panel usefulness after 50 ' diffusion mixes through optical thin film.
In addition, luminescence unit 30 also can be the lighting device that is used for normal lighting merely, and wherein optical thin film can be a sheet glass.
In sum, a kind of luminescence unit of the present invention is to comprise an at least one LED encapsulation module and an optical thin film, and wherein LED encapsulation module is to comprise that two LED crystal particle are long to send an object wave spike.Compared with prior art, LED encapsulation module is to have first crystal grain and second crystal grain, and primary peak wavelength and secondary peak wavelength are to belong to same colour system, first crystal grain and second crystal grain are at a distance of one first distance, and LED encapsulation module and visible range or be to have a shortest second distance with the edge of visible range, wherein first distance is less than second distance.Thus, luminescence unit of the present invention can be by selecting the plural crystal grain with suitable coupling wavelength, just capable of being combinedly goes out the long plural crystal grain of object wave spike, plural plural crystal grain is packaged together and forms LED encapsulation module.Therefore, the package module of each light-emitting diode can make human eye in object wave spike strong point, experiences just like two luminous intensities with the long light-emitting diode of object wave spike.In addition, by the process of selecting coupling crystal grain, the encapsulation dealer scope that can relax the crest wavelength of non-defective unit crystal grain, and then can promote the crystal grain utilance of same wafer or same batch of wafer, and the material of reduction luminescence unit and reduce the waste of former material.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (15)
1, a kind of luminescence unit is characterized in that it comprises:
One LED encapsulation module, comprise a supporting body, one first crystal grain and one second crystal grain, this first crystal grain and this second crystal grain are arranged at this supporting body, this LED encapsulation module is long in order to send an object wave spike, this first crystal grain has a primary peak wavelength, this primary peak wavelength is long greater than this object wave spike, this second crystal grain has a secondary peak wavelength, this secondary peak wavelength is long less than this object wave spike, this primary peak wavelength and this secondary peak wavelength are to belong to same colour system, and wherein this first crystal grain and this second crystal grain are at a distance of one first distance; And
One optical thin film is adjacent to this LED encapsulation module, and this optical thin film has a visible range, this LED encapsulation module and this visible range or have a shortest second distance with the edge of this visible range, and this first distance is less than this second distance.
2, luminescence unit according to claim 1 is characterized in that wherein said first crystal grain and this second crystal grain are the whiles or not luminous simultaneously.
3, luminescence unit according to claim 1, the difference that it is characterized in that wherein said primary peak wavelength and this secondary peak wavelength is less than 50nm.
4, luminescence unit according to claim 1, the difference that it is characterized in that wherein said primary peak wavelength and this secondary peak wavelength is less than 30nm.
5, luminescence unit according to claim 1 is characterized in that the difference of wherein said target wavelength and this primary peak wavelength, is not equal to the difference of this target wavelength and this secondary peak wavelength.
6, luminescence unit according to claim 1 is characterized in that the difference of wherein said target wavelength and this primary peak wavelength, equals the difference of this target wavelength and this secondary peak wavelength.
7, luminescence unit according to claim 1 is characterized in that wherein said first crystal grain is different with the luminous intensity of this second crystal grain.
8, luminescence unit according to claim 1 is characterized in that wherein said object wave spike is about between between the 615nm to 650nm.
9, luminescence unit according to claim 1 is characterized in that wherein said object wave spike is about between between the 515nm to 555nm.
10, luminescence unit according to claim 1 is characterized in that wherein said object wave spike is about between between the 455nm to 485nm.
11, luminescence unit according to claim 1, it is characterized in that wherein said LED encapsulation module more comprises one the 3rd crystal grain, it has one the 3rd crest wavelength, and this primary peak wavelength, this secondary peak wavelength and the 3rd crest wavelength are to belong to this colour system.
12, luminescence unit according to claim 11 is characterized in that wherein said the 3rd crest wavelength greater than this primary peak wavelength, and the difference of the 3rd crest wavelength and this secondary peak wavelength is less than 50nm.
13, luminescence unit according to claim 11 is characterized in that wherein said the 3rd crest wavelength is less than this secondary peak wavelength, and the difference of this primary peak wavelength and the 3rd crest wavelength is less than 50nm.
14, luminescence unit according to claim 11 is characterized in that wherein said the 3rd crystal grain and this first crystal grain at a distance of one the 3rd distance, and the 3rd distance is less than this second distance.
15, luminescence unit according to claim 1 is characterized in that it more comprises:
Another LED encapsulation module is to be adjacent to this LED encapsulation module.
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| CNB2006100830169A CN100511675C (en) | 2006-05-25 | 2006-05-25 | Light emitting unit |
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| CNB2006100830169A CN100511675C (en) | 2006-05-25 | 2006-05-25 | Light emitting unit |
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| CN100511675C CN100511675C (en) | 2009-07-08 |
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