CN101075850B - Optical carrier correlating device of time integral redundancy - Google Patents

Abstract

The invention comprises: a light source of testing light 1, a beam shaper 2, a silicon slice 3, a convex lens 4, a spatial filer 5, a convex lens 6 and an optical detector array 7, all of them are sequentially located on same optical axis. Wherein, the spatial filter 5 is at the focal plane of the convex lens 4, and has a distance of equaling the focus length of convex lens 6 with the convex lens6. It also comprises a scanning driver 8, a vibration mirror 9, and a excitation source 10; wherein, the scanning driver 8 drives the vibration mirror 9; the excitation source 10 is incident into thein-plane of the vibration beam on the silicon slice 3 through vibration mirror 9, light source of test light an beam shaper; the RF electrical signal S2(t) acts on the excitation source 10 in order to modulate the excitation source; the RF electrical signal S1(t) acts on the bias voltage V1 in order to modulate the light source of testing light.

Description

Time integral electron hole pair correlator

Technical field

The present invention relates to the optical information technical field, be specifically related to a kind of time integral electron hole pair correlator.

Background technology

Correlator is mainly used in associated picture identification, detects aspects such as small-signal.It is higher to the bandwidth requirement of system particularly will to detect the small-signal that is submerged in the strong noise background in complicated day by day electromagnetic wave environment.

At present, correlator mainly contains digital correlator, acousto-optic correlator, optic-electronic hybrid joint transform correlator, optical correlators.The method of digital correlator available hardware or software realizes, by decision circuit two string digital code streams is compared and realizes being correlated with, and is mainly used in communication aspects, but can't carries out the parallel processing of data; Acousto-optic correlator utilizes the principle of acoustic optic interaction, introduces light signal by the transmission of sound wave and postpones, and finish multiplying with an optical system, has the ability that high-speed parallel is handled, and shortcoming is that volume is comparatively huge, and bandwidth is big inadequately; The optic-electronic hybrid joint transform correlator is computer-controlled photoelectricity hybrid system, and system carries out Fourier transform and optical correlation with the light velocity, and power spectrum and related output signal are then surveyed by CCD, can carry out Digital Signal Processing; Optical correlators mainly use lens transformation to finish the optics phase multiplication of frequency plane, and flexibility is relatively poor, can't handle in real time.

Summary of the invention

Technical problem to be solved by this invention is how a kind of time integral electron hole pair correlator is provided, this correlator can overcome the shortcoming of prior art, and low to environmental requirement in use, the processing signals spectral range is wide, can apply to high frequency and treat with leniency in the signal processing.

Technical problem proposed by the invention is to solve like this: a kind of time integral electron hole pair correlator is provided, it is characterized in that, comprise and detect radiant 1, beam shaping 2, silicon chip 3, first convex lens 4, spatial filter 5, second convex lens 6 and photodetector array 7, they are arranged on the same optical axis in turn, its spatial filter 5 is on the focal plane of first convex lens 4, and the distance of the spatial filter 5 and second convex lens 6 is the focal length of second convex lens 6; Also comprise scanner driver 8, galvanometer 9 and exciting light sources 10, wherein scanner driver 8 drives galvanometers 9 rotations, detect radiant through be incident on behind the beam shaping 2 on the silicon chip 3 inclined to one side planar beam and exciting light sources 10 through the reverberation maintenance of galvanometers 9 at grade; Rf signal S ₂(t) act on the exciting light sources 10, be used for modulating exciting light sources, rf signal S ₁(t) be added to bias voltage V ₁On, be used for the modulation detection radiant.

According to time integral electron hole pair correlator provided by the present invention, it is characterized in that, detecting radiant 1 is infrared semiconductor laser, exciting light sources 10 is the laser of 830nm for optical wavelength, beam shaping is made up of convex lens and lens pillar, select the heavy doping silicon chip for use, photodetector array is a semiconductor uncooled ir photodetector array.

The basic principle of the present invention's utilization: exciting light (photon energy is greater than the energy gap of semi-conducting material) incides semiconductor material surface excitation electron hole to (or being called electron hole pair), because this light beam goes into to have caused the material change of refractive, and be the signal of semi-conducting material variations in refractive index by the conversion of signals that the rotation of galvanometer will be modulated exciting light sources, and this variations in refractive index signal is loaded with the amplitude phase information of modulated light source signal.When detecting light and pass the semiconductor that this refractive index generating period sexually revises, diffraction will take place.Detect diffraction light after lens focus with photodetector at last.

Beneficial effect of the present invention: 1, instantaneous band is wide, and this machine instant bandwidth can reach 1GHz; 2, can handle parallel signal in real time; 3, multi-form signal all there is disposal ability preferably, is easy to Gauss's weighting; 4, anti-electromagnetic interference capability is strong, the signal resolution height.

Description of drawings

Fig. 1 is a time integral electron hole pair correlator schematic diagram.

Wherein, 1, detect radiant, 2, beam shaping, 3, silicon chip, 4, first convex lens, 5, spatial filter, 6, second convex lens, 7, photodetector array, 8, scanner driver, 9, galvanometer, 10, exciting light sources 10.

Embodiment

The present invention is further illustrated below in conjunction with accompanying drawing.

As shown in Figure 1, comprise from top to bottom from left to right: detect radiant 1, beam shaping 2, silicon chip 3, the first convex lens 4, spatial filter 5, the second convex lens 6, photodetector array 7, scanner driver 8, galvanometer 9, exciting light sources 10.1-7 on same optical axis, 10 through 9 reverberation be incident to flat beam on 3 in same plane.Signal S ₂(t) be added to bias voltage V ₂On, be used for modulating exciting light sources, the rf signal S that receives ₁(t) be added to bias voltage V ₁On, and be used for the modulation detection radiant.Beam shaping 2 is made up of convex lens and lens pillar, the light that detects radiant 1 outgoing impinges perpendicularly on the beam shaping 2, elder generation's planoconvex lens beam-expanding collimation passes through lens pillar again, the light of outgoing is flat beam, this light beam impinges perpendicularly on the silicon chip 3, the light of outgoing has diffraction light and non-diffracted light, these two kinds of light scioptics focus on the spatial filter 5 that is placed on its focal plane, with the non-diffracted light elimination, diffraction light then behind second lens 6 outgoing be collimated light beam, survey output through photodetector array 7.Its spatial filter 5 is on the focal plane of first convex lens 4, and the distance of the spatial filter 5 and second convex lens 6 is the focal length of second convex lens 6.Scanner driver 8 drives galvanometers 9 rotations, and exciting light projects on the minute surface of galvanometer 9 and is reflected onto on the semi-conductor silicon chip, because the rotation of galvanometer 9 minute surfaces, the exciting light light path changes, be equivalent to exciting light from top to down scan-type project on the silicon chip 3.Bias voltage V ₁(V ₂) be time-independent constant, S ₁(t)+V ₁(t) (or S ₂(t)+V ₂(t)), be used for modulated light source all the time greater than zero.

The detection radiant is an infrared semiconductor laser, and exciting light sources is that optical wavelength is the laser of 830nm, and beam shaping is made up of convex lens and lens pillar, selects the heavy doping silicon chip for use, and photodetector array is a semiconductor uncooled ir photodetector array.After projecting lens pillar behind the light beam planoconvex lens beam-expanding collimation, light beam becomes a flat beam in the focal plane.Select the heavy doping silicon chip for use, photodetector array is a semiconductor uncooled ir photodetector array.

Time integral is calculated and is finished by following steps:

One beam intensity is subjected to the excitation laser of input signal modulation, galvanometer by periodic oscillations shines on the silicon chip, form and the corresponding semiconductor carriers grating of signal, another road projects on the lens pillar after detecting ray laser scioptics beam-expanding collimation, make light beam become a flat beam in the focal plane, interact with the semiconductor carriers grating again.After the spatial filter elimination non-diffracted light of output light through being positioned at first lens, 4 focal planes, pass through lens again, then first-order diffraction light is focused the photoelectric detector that is placed on the focal plane, and realizes correlation intergal thereon.

Signal S ₂(t) be added to bias voltage V ₂On, be used for modulating exciting light sources, then the output intensity of exciting light sources is I ₂(t)=a ₀[V ₂+ S ₂(t)], the rf signal S that receives ₁(t) be added to bias voltage V ₁On, and be used for the modulation detection radiant, be I then by detecting the light luminous intensity behind the silicon chip ₂(t)=[V ₁+ S ₁(t)] [V ₂+ S ₂(t+ τ)], following formula is launched promptly:

$I\left(\mathrm{\&tau;}\right)={\mathrm{TV}}_1{\mathrm{<figure-callout\; id="2"\; label="V"\; filenames="H2007100493422E00011.png"\; state="\{\{state\}\}">V</figure-callout>}}_2+{\mathrm{<figure-callout\; id="1"\; label="V"\; filenames="H2007100493422E00011.png"\; state="\{\{state\}\}">V</figure-callout>}}_1\underset{T}{\&Integral;}{S}_2(t+\mathrm{\&tau;})\mathrm{dt}+{\mathrm{<figure-callout\; id="2"\; label="V"\; filenames="H2007100493422E00011.png"\; state="\{\{state\}\}">V</figure-callout>}}_2\underset{T}{\&Integral;}{S}_1\left(t\right)\mathrm{dt}+V_1{\mathrm{<figure-callout\; id="2"\; label="V"\; filenames="H2007100493422E00011.png"\; state="\{\{state\}\}">V</figure-callout>}}_2\underset{T}{\&Integral;}{S}_1\left(t\right)S_2(t+\mathrm{\&tau;})\mathrm{dt}$

In the formula, first on the right is a DC terms, the available filters filtering, and the 2nd, 3 the 4th of ratio is much smaller, can omit, Gu behind detector array, be output as S at last ₁(t) and S ₂(t) correlation intergal,

$I\left(\mathrm{\&tau;}\right)=V_1{\mathrm{<figure-callout\; id="2"\; label="V"\; filenames="H2007100493422E00011.png"\; state="\{\{state\}\}">V</figure-callout>}}_2\underset{T}{\&Integral;}{S}_1\left(t\right)S_2(t+\mathrm{\&tau;})\mathrm{dt}.$

Claims (2)

1. time integral electron hole pair correlator, it is characterized in that, comprise and detect radiant (1), beam shaping (2), silicon chip (3), first convex lens (4), spatial filter (5), second convex lens (6) and photodetector array (7), they are arranged on the same optical axis in turn, its spatial filter (5) on the focal plane of first convex lens (4), with the distance of second convex lens (6) be the focal length of second convex lens (6); Also comprise scanner driver (8), galvanometer (9) and exciting light sources (10), wherein scanner driver (8) drives galvanometer (9) rotation, detect radiant (1) through be incident on behind the beam shaping (2) on the silicon chip (3) flat beam and exciting light sources (10) through the reverberation maintenance of galvanometer (9) at grade, the photon energy of exciting light sources (10) is greater than the energy gap of semi-conducting material; Rf signal S2 (t) acts on the exciting light sources (10), is used for modulating exciting light sources, and rf signal S1 (t) acts on the detection radiant, is used for the modulation detection radiant.

2. time integral electron hole pair correlator according to claim 1, it is characterized in that, detecting radiant (1) is infrared semiconductor laser, exciting light sources (10) is the laser of 830nm for optical wavelength, beam shaping is made up of convex lens and lens pillar, silicon chip (3) is selected the heavy doping silicon chip for use, and photodetector array is a semiconductor uncooled ir photodetector array.

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