CN101073200A - 基于矢量包络注入的预失真方法与装置 - Google Patents
基于矢量包络注入的预失真方法与装置 Download PDFInfo
- Publication number
- CN101073200A CN101073200A CNA2005800423452A CN200580042345A CN101073200A CN 101073200 A CN101073200 A CN 101073200A CN A2005800423452 A CNA2005800423452 A CN A2005800423452A CN 200580042345 A CN200580042345 A CN 200580042345A CN 101073200 A CN101073200 A CN 101073200A
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- China
- Prior art keywords
- signal
- envelope
- frequency
- signals
- thermal compensation
- Prior art date
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L27/00—Modulated-carrier systems
- H04L27/32—Carrier systems characterised by combinations of two or more of the types covered by groups H04L27/02, H04L27/10, H04L27/18 or H04L27/26
- H04L27/34—Amplitude- and phase-modulated carrier systems, e.g. quadrature-amplitude modulated carrier systems
- H04L27/36—Modulator circuits; Transmitter circuits
- H04L27/366—Arrangements for compensating undesirable properties of the transmission path between the modulator and the demodulator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2201/00—Indexing scheme relating to details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements covered by H03F1/00
- H03F2201/32—Indexing scheme relating to modifications of amplifiers to reduce non-linear distortion
- H03F2201/3221—Predistortion by overamplifying in a feedforward stage the distortion signal to have a combined main signal and "negative" distortion to form the predistorted signal for a further stage. so that after amplification in the further stage only the amplified main signal remains
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2201/00—Indexing scheme relating to details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements covered by H03F1/00
- H03F2201/32—Indexing scheme relating to modifications of amplifiers to reduce non-linear distortion
- H03F2201/3224—Predistortion being done for compensating memory effects
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (1)
- 权 利 要求 书1. 一种基于矢量包络注入的预失真方法,其特征在于,包括如下步骤: 将射频输入信号分成两路信号;一路输入信号产生两个幅度可独立调节的包络注入信号;将另一路信号再分成两路射频信号;对所述两路射频信号进行放大, 其放大的幅度相同;所述两个包络注入信号分别与所述两路射频信号进行混频, 获得两个 补偿信号;对所述放大后的射频信号和所述补偿信号进行相同的功率合成, 得到 两个方向不同的补偿信号以 故大后的射频信号。2.根据权利要求 1所述的基于矢量包络注入的预失真方法, 其特征在 于, 所述产生包络注入信号的步骤进一步包括:提取输入信号的包络信号为二次方项;将包络信号进行滤波, 获得其低频分量;调节低频包络信号的幅度, 获得分别控制补偿信号的幅度和相位的两 个低频包络注入信号。3.根据权利要求 1所述的基于矢量包络注入的预失真方法, 其特征在 于, 所述对补偿信号进行功率合成的步骤, 对所述补偿信号进行正交功率 合成, 获得两个正交的补偿信号。4.一种基于矢量包络注入的预失真装置, 其特征在于, 包括: 乘法器, 用于对射频输入信号进行平方处理;低通滤波器, 用于提取信号的低频分量;第一比例单元和第二比例单元, 用于调整信号幅度, 产生两路低频包 络注入信号;功分器, 用于将射频输入信号分成两路输入信号;第一射频放大器, 用于对一路输入信号进行放大, 并将放大后的信号 和一路低频包络注入信号进行混频; 第二射频放大器, 用于对另一路输入信号进^ f亍放大, 并将放大后的信 号和另一路低频包络注入信号进行混频;混合电桥, 用于对所述第一射频放大器和第二射频放大器输出的信号 进行功率合成, 得到两个方向不同的补偿信号以及放大后的射 ^信号; 其中所述第一射频放大器与第二射频放大器相同。5. 根据权利要求 4所述的基于矢量包络注入的预失真装置, 其特征在 于, 所述混合电桥采用 90度混合电桥。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2005/000108 WO2006079241A1 (fr) | 2005-01-25 | 2005-01-25 | Dispositif de pre-distorsion base sur une injection d'enveloppe de vecteur, et procede correspondant |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101073200A true CN101073200A (zh) | 2007-11-14 |
CN100530946C CN100530946C (zh) | 2009-08-19 |
Family
ID=36740011
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005800423452A Active CN100530946C (zh) | 2005-01-25 | 2005-01-25 | 基于矢量包络注入的预失真方法与装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7756492B2 (zh) |
CN (1) | CN100530946C (zh) |
WO (1) | WO2006079241A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109768774A (zh) * | 2017-11-09 | 2019-05-17 | 陕西亚成微电子股份有限公司 | 一种用于包络跟踪的电源 |
CN109768773A (zh) * | 2017-11-09 | 2019-05-17 | 陕西亚成微电子股份有限公司 | 一种用于包络跟踪的电源 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104407181B (zh) * | 2014-12-25 | 2017-06-30 | 上海联星电子有限公司 | 一种测试夹具 |
CN105468079B (zh) * | 2015-12-30 | 2017-05-31 | 沈阳东软医疗系统有限公司 | 一种双路对称输出可调电源 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5892397A (en) * | 1996-03-29 | 1999-04-06 | Spectrian | Adaptive compensation of RF amplifier distortion by injecting predistortion signal derived from respectively different functions of input signal amplitude |
US5898338A (en) * | 1996-09-20 | 1999-04-27 | Spectrian | Adaptive digital predistortion linearization and feed-forward correction of RF power amplifier |
US6104241A (en) | 1998-11-18 | 2000-08-15 | Spectrian | High efficiency feed-forward RF power amplifier with predistoration enchancement |
US6438360B1 (en) * | 1999-07-22 | 2002-08-20 | Motorola, Inc. | Amplifier system with load control to produce an amplitude envelope |
JP2001313532A (ja) * | 2000-05-01 | 2001-11-09 | Sony Corp | 歪み補償装置 |
CN1166053C (zh) | 2001-05-08 | 2004-09-08 | 华为技术有限公司 | 自适应射频数字预失真线性化方法及其电路 |
CN1158824C (zh) | 2001-06-01 | 2004-07-21 | 华为技术有限公司 | 一种线性功率放大方法及其装置 |
JP2003347854A (ja) * | 2002-05-29 | 2003-12-05 | Matsushita Electric Ind Co Ltd | 電力増幅器 |
CN1516493A (zh) | 2003-01-10 | 2004-07-28 | 深圳市中兴通讯股份有限公司上海第二 | 一种功率放大器线性化方法和线性功率放大器装置 |
US7848717B2 (en) * | 2004-12-21 | 2010-12-07 | Zte Corporation | Method and system for out of band predistortion linearization |
-
2005
- 2005-01-25 US US11/814,636 patent/US7756492B2/en not_active Expired - Fee Related
- 2005-01-25 CN CNB2005800423452A patent/CN100530946C/zh active Active
- 2005-01-25 WO PCT/CN2005/000108 patent/WO2006079241A1/zh not_active Application Discontinuation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109768774A (zh) * | 2017-11-09 | 2019-05-17 | 陕西亚成微电子股份有限公司 | 一种用于包络跟踪的电源 |
CN109768773A (zh) * | 2017-11-09 | 2019-05-17 | 陕西亚成微电子股份有限公司 | 一种用于包络跟踪的电源 |
CN109768774B (zh) * | 2017-11-09 | 2022-09-16 | 陕西亚成微电子股份有限公司 | 一种用于包络跟踪的电源 |
Also Published As
Publication number | Publication date |
---|---|
US7756492B2 (en) | 2010-07-13 |
CN100530946C (zh) | 2009-08-19 |
WO2006079241A1 (fr) | 2006-08-03 |
US20080164943A1 (en) | 2008-07-10 |
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Effective date of registration: 20151202 Address after: 518000 Zhongxing building, science and technology south road, Nanshan District hi tech Industrial Park, Guangdong, Shenzhen Patentee after: ZTE Corp. Patentee after: SANECHIPS TECHNOLOGY Co.,Ltd. Address before: 518000 Zhongxing building, science and technology south road, Nanshan District hi tech Industrial Park, Guangdong, Shenzhen Patentee before: ZTE Corp. |
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Effective date of registration: 20221123 Address after: 518055 Zhongxing Industrial Park, Liuxian Avenue, Xili street, Nanshan District, Shenzhen City, Guangdong Province Patentee after: SANECHIPS TECHNOLOGY Co.,Ltd. Address before: 518057 Zhongxing building, science and technology south road, Nanshan District hi tech Industrial Park, Guangdong, Shenzhen Patentee before: ZTE Corp. Patentee before: SANECHIPS TECHNOLOGY Co.,Ltd. |