CN101064521A - High-frequency circuit, high-frequency device and communications apparatus - Google Patents

High-frequency circuit, high-frequency device and communications apparatus Download PDF

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Publication number
CN101064521A
CN101064521A CNA2007101008937A CN200710100893A CN101064521A CN 101064521 A CN101064521 A CN 101064521A CN A2007101008937 A CNA2007101008937 A CN A2007101008937A CN 200710100893 A CN200710100893 A CN 200710100893A CN 101064521 A CN101064521 A CN 101064521A
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China
Prior art keywords
circuit
frequency
terminal
channel splitting
electrode pattern
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Chinese (zh)
Inventor
深町启介
釰持茂
佐竹裕崇
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Proterial Ltd
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Hitachi Metals Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Abstract

A high-frequency circuit comprising a switch circuit connected to an antenna terminal, first and second diplexer circuits connected to the switch circuit, first and second power amplifier circuits connected to the first diplexer circuit, first and second bandpass filter circuits connected to the first and second power amplifier circuits, a third bandpass filter circuit connected to the second diplexer circuit, a detection circuit disposed between the switch circuit and the first diplexer circuit, and a low-noise amplifier circuit disposed between the switch circuit and the second diplexer circuit.

Description

High-frequency circuit, high-frequency unit and communicator
Technical field
The present invention relates to a kind of can employed at least two communication systems of radio communication between electronic electric equipment in shared high-frequency circuit, and have the high-frequency unit of this high-frequency circuit and the communicator that has used described high-frequency unit.
Background technology
Now, extensively popularize based on the data communication that with the IEEE802.11 specification is the WLAN of representative, for example be applied in the signal transmission mechanism etc. in electronic equipment, automobile and the aircraft such as PC peripheral equipments such as personal computer (PC), printer, hard disk, broadband router, FAX, refrigerator, standard TV receiver (SDTV), high definition television machine (HDTV), digital camera, Digital Video, mobile phone.
As the standard of WLAN, IEEE802.11a uses OFDM (Orthogonal Frequency Division Multiples: modulation system OFDM), the maximum high-speed data communication of supporting 54Mbps in the frequency band of 5GHz.IEEE802.11b is at the ISM of the 2.4GHz that does not need the radio communication license just can use (Industrial, Scientific and Medical: industry, science and medical treatment) in the band territory, use DSSS (Direct Sequence Spread Spectrum: direct order frequency spectrum diffusion) mode, the high-speed communication of support 5.5Mbps and 11Mbps.IEEE802.11g is the same with IEEE802.11b, uses the OFDM modulation system in 2.4GHz band territory, the maximum high-speed data communication of supporting 54Mbps.Below as required, with IEEE802.11b and IEEE802.11g as the 1st communication system (11bg), be that example describes with IEEE802.11a as the situation of the 2nd communication system (11a).
As employed high-frequency circuit in the multi-band communication apparatus that uses such WLAN, disclose a kind of high-frequency circuit that diversity (diversity) receives that carries out among the WO2006/003959A, it has: can be at two different communication system (IEEE802.11a of communication band, IEEE802.11b) 2 dual-band antennas receiving and dispatching in, possesses the HF switch of switching 4 ports that are connected between transmitter side circuit and the receiver side circuit, be arranged on 1 port of HF switch and first channel splitting circuit between the transmitter side circuit, and be arranged on another port of HF switch and second channel splitting circuit between the receiver side circuit.
The high-frequency circuit shown in Figure 26 of WO2006/003959A has been shown among Figure 21.This high-frequency circuit, between high-frequency switch circuit 10 and transmitter side circuit, be provided with channel splitting circuit 13, between channel splitting circuit 13 and transmission terminal 11bg-T, be provided with power amplification circuit 2 and bandwidth-limited circuit 4, between channel splitting circuit 13 and transmission terminal 11a-T, be provided with low-pass filter circuit 19, power amplification circuit 3 and bandwidth-limited circuit 5, between high-frequency switch circuit 10 and channel splitting circuit 13, be provided with detecting circuit 8, between high-frequency switch circuit 10 and receiver side circuit, be provided with channel splitting circuit 14, between channel splitting circuit 14 and reception terminal 11bg-R, be provided with bandwidth-limited circuit 6, between channel splitting circuit 14 and reception terminal 11a-R, be provided with low-pass filter circuit 26 and low noise amplifier circuit 27, between antenna terminal Ant1 and high-frequency switch circuit, be provided with trap circuit 28, between antenna terminal Ant2 and high-frequency switch circuit 10, be provided with trap circuit 29.In this high-frequency circuit, be provided with low noise amplifier circuit 27 in the receiving lines of 5GHz frequency band (11a-R), but, therefore be unsuitable for miniaturization because the low noise amplifier circuit of 2.4GHz frequency band need be set separately.
Among the WO2006/003959A, the input side of low noise amplifier is connected with channel splitting circuit, be connected with band pass filter or low pass filter between channel splitting circuit and the low noise amplifier, therefore, receiving sensitivity has been subjected to the very big influence of the insertion loss of the noise figure of low noise amplifier and band pass filter or low pass filter and channel splitting circuit.Therefore, use the band pass filter of insertion loss with about 2dB degree at the input side of low noise amplifier, or low pass filter and having under the situation of channel splitting circuit of insertion loss of about 1dB degree, receiving sensitivity is limited.
A kind of circuit is disclosed among the JP2002-208874A, it is as circuit shared in WLAN and bluetooth, between antenna and antenna change-over switch, be provided with band pass filter, transmitter side at antenna change-over switch is provided with power amplifier shared in WLAN and bluetooth, for the transmission of distinguishing WLAN is connected power amplifier with bluetooth with distributor, receiver side at antenna change-over switch, be provided with shared low noise amplifier in the reception of the reception of WLAN and bluetooth, be connected with the distributor of the reception of the reception of distinguishing WLAN and bluetooth with low noise amplifier.JP2002-208874A has put down in writing frequency has been selected the example of the duplexer (diplexer) of usefulness as the combination of low general formula match circuit and high general formula match circuit as shown in figure 22.This circuit has been realized the reduction of transmitter side high order harmonic component generating capacity and the reduction of receiver side attenuation by 1 band pass filter, but can't be shared in 2.4GHz frequency band and these two frequency bands of 5GHz frequency band, and, because the input side of low noise amplifier has band pass filter and channel splitting circuit, so receiving sensitivity is limited.
And then the WLAN communicator corresponding with speed that has improved communication based on a plurality of antennas of use and the standard of the IEEE802.11n of MIMO (Multi-Input-Multi-Output) technology of quality is more and more universal.But in the high-frequency circuit of WO2006/003959A and JP2002-208874A, can't abundant corresponding IEEE802.11n.
Summary of the invention
Therefore, the objective of the invention is to, provide a kind of receiving sensitivity that can in the two waveband wireless device, use good small-sized high-frequency circuit.
Another object of the present invention is to, a kind of high-frequency unit with this high-frequency circuit is provided.
Another purpose of the present invention is, a kind of communicator with this high-frequency unit is provided.
High-frequency circuit of the present invention is a kind of the 1st and the 2nd frequency band that optionally uses, and carries out employed high-frequency circuit in the two waveband wireless device of radio communication, has:
Antenna terminal, its be connected with the antenna that can receive and dispatch in the 2nd frequency band the above-mentioned the 1st;
Be transfused to the 1st the 2nd reception terminal that receives terminal and export the received signal of above-mentioned the 2nd frequency band of the received signal of the 1st transmission terminal of the transmission signal of above-mentioned the 1st frequency band, the 2nd transmission terminal that is transfused to the transmission signal of above-mentioned the 2nd frequency band, above-mentioned the 1st frequency band of output;
Switch above-mentioned antenna terminal and the above-mentioned the 1st and the 2nd and send terminal or the above-mentioned the 1st and the 2nd switching circuit that is connected that receives between the terminal;
Being arranged on said switching circuit and the above-mentioned the 1st and the 2nd sends the 1st channel splitting circuit between the terminal and is arranged on said switching circuit and the above-mentioned the 1st and the 2nd the 2nd channel splitting circuit that receives between the terminal;
Being arranged on above-mentioned the 1st channel splitting circuit and the above-mentioned the 1st sends the 1st power amplification circuit between the terminal and is arranged on above-mentioned the 1st channel splitting circuit and the above-mentioned the 2nd the 2nd power amplification circuit that sends between the terminal;
Be arranged on above-mentioned the 1st power amplification circuit and the above-mentioned the 1st send the 1st bandwidth-limited circuit between the terminal, be arranged on above-mentioned the 2nd power amplification circuit and the above-mentioned the 2nd send the 2nd bandwidth-limited circuit between the terminal and be arranged on above-mentioned the 2nd channel splitting circuit and above-mentioned the 1st reception terminal between the 3rd bandwidth-limited circuit;
Be arranged on the detecting circuit between said switching circuit and above-mentioned the 1st channel splitting circuit; And
Be arranged on the low noise amplifier circuit between said switching circuit and above-mentioned the 2nd channel splitting circuit.
Owing to be arranged on the input side of the low noise amplifier circuit between said switching circuit and above-mentioned the 2nd channel splitting circuit, be connected with switching circuit rather than channel splitting circuit, therefore, significantly reduce the insertion loss of input side, made receiving sensitivity obtain tremendous raising.In addition, be arranged on the detecting circuit between said switching circuit and above-mentioned the 1st channel splitting circuit, for example can detection 2.4GHz and the transmission signals in these two bands of 5GHz frequency band territory, therefore help the miniaturization and the cost degradation of high-frequency circuit.
Preferably between above-mentioned the 1st channel splitting circuit and above-mentioned the 2nd power amplification circuit, be provided with low-pass filter circuit.By low-pass filter circuit, can reduce the high order harmonic component that produces from power amplification circuit.
Preferably between said switching circuit and above-mentioned antenna terminal, be provided with high order harmonic component and reduce circuit.High order harmonic component reduces circuit can reduce the high order harmonic component that produces from power amplification circuit.
In preferred above-mentioned the 1st～the 3rd bandwidth-limited circuit at least one, have mutual the magnetic-coupled the 1st and the 2nd inductor and constitute the 1st and the 2nd capacitor of parallel circuits respectively with the above-mentioned the 1st and the 2nd inductor, the above-mentioned the 1st and the 2nd inductor is via the 3rd inductor ground connection.Constitute the 1st and the 2nd capacitor of parallel circuits respectively by mutual the magnetic-coupled the 1st and the 2nd inductor and with the 1st and the 2nd inductor, can realize the bandwidth-limited circuit that low-loss in a kind of passband and the outer height of communication band are decayed.In addition, by making the 1st and the 2nd inductor, can increase band field width degree, thereby can (use in 4.9～5.85GHz) at the 5GHz of broad frequency band via the 3rd inductor ground connection.
Preferred above-mentioned low noise amplifier circuit has: transistor, the incoming line that is connected with above-mentioned transistorized base stage, the outlet line that is connected with above-mentioned transistorized collector electrode, have between the node of the node that is arranged on above-mentioned incoming line and above-mentioned outlet line and the feedback circuit of the resistor, inductor and the capacitor that are connected in series.Constitute by this, can realize the wide bandization of low noise amplifier circuit.
Preferred above-mentioned low noise amplifier circuit has: between the node of transistor, the incoming line that is connected with above-mentioned transistorized base stage, the outlet line, the node that is arranged on above-mentioned incoming line and the above-mentioned outlet line that are connected with above-mentioned transistorized collector electrode and have the feedback circuit of resistance and be arranged on the node of above-mentioned incoming line and the capacitor between the above-mentioned transistorized base stage.Constitute by this, can realize the planarization of the gain characteristic of low noise amplifier circuit.
Be provided with the inductor of connecting in the preferred above-mentioned feedback circuit with above-mentioned resistance.Because the impedance of inductor is bigger in the high frequency band territory, therefore compare with the low-frequency band territory, can reduce feedback quantity more in the high frequency band territory.Thereby, can improve the gain in the high frequency band territory, make the gain characteristic planarization more of relative frequency.
Preferred above-mentioned transistorized emitter is via inductor ground connection.By this inductor, can adjust gain.
Preferably between said switching circuit and above-mentioned low noise amplifier circuit, be connected with when the reception of the signal of above-mentioned the 1st frequency band, the signal of above-mentioned the 1st frequency band is passed through, when the reception of the signal of above-mentioned the 2nd frequency band, stop the variable notch filter circuit of the signal of above-mentioned the 1st frequency band.Constitute by this, thereby can prevent that the different signal of frequency band that enters into low noise amplifier circuit from interfering with each other the generation distortion.
High-frequency unit of the present invention is a kind of the 1st and the 2nd frequency band that optionally uses, and carries out employed high-frequency unit in the two waveband wireless device of radio communication, has high-frequency circuit, and described high-frequency circuit has:
Antenna terminal, its be connected with the antenna that can receive and dispatch in the 2nd frequency band the above-mentioned the 1st;
Be transfused to the 1st the 2nd reception terminal that receives terminal and export the received signal of above-mentioned the 2nd frequency band of the received signal of the 1st transmission terminal of the transmission signal of above-mentioned the 1st frequency band, the 2nd transmission terminal that is transfused to the transmission signal of above-mentioned the 2nd frequency band, above-mentioned the 1st frequency band of output;
Switch above-mentioned antenna terminal and the above-mentioned the 1st and the 2nd and send terminal or the above-mentioned the 1st and the 2nd switching circuit that is connected that receives between the terminal;
Being arranged on said switching circuit and the above-mentioned the 1st and the 2nd sends the 1st channel splitting circuit between the terminal and is arranged on said switching circuit and the above-mentioned the 1st and the 2nd the 2nd channel splitting circuit that receives between the terminal;
Being arranged on above-mentioned the 1st channel splitting circuit and the above-mentioned the 1st sends the 1st power amplification circuit between the terminal and is arranged on above-mentioned the 1st channel splitting circuit and the above-mentioned the 2nd the 2nd power amplification circuit that sends between the terminal;
Be arranged on above-mentioned the 1st power amplification circuit and the above-mentioned the 1st send the 1st bandwidth-limited circuit between the terminal, be arranged on above-mentioned the 2nd power amplification circuit and the above-mentioned the 2nd send the 2nd bandwidth-limited circuit between the terminal and be arranged on above-mentioned the 2nd channel splitting circuit and above-mentioned the 1st reception terminal between the 3rd bandwidth-limited circuit;
Be arranged on the detecting circuit between said switching circuit and above-mentioned the 1st channel splitting circuit; And
Be arranged on the low noise amplifier circuit between said switching circuit and above-mentioned the 2nd channel splitting circuit;
Wherein, above-mentioned high-frequency unit has: be formed with one laminate that a plurality of ceramic dielectric layers of electrode pattern are constituted and the element that is equipped on the surface of above-mentioned laminate, above-mentioned electrode pattern constitutes the above-mentioned the 1st and the 2nd channel splitting circuit and above-mentioned the 1st～the 3rd bandwidth-limited circuit at least, and above-mentioned lift-launch element comprises the semiconductor element that said switching circuit, the above-mentioned the 1st and the 2nd power amplification circuit and above-mentioned low noise amplifier circuit are used.
By above-mentioned formation, high-frequency unit of the present invention can be realized miniaturization, and the insertion loss based on the cloth line resistance is minimized.
Preferred above-mentioned high-frequency circuit has low-pass filter circuit between above-mentioned the 1st channel splitting circuit and above-mentioned the 2nd power amplification circuit, above-mentioned low-pass filter circuit is made of above-mentioned electrode pattern in above-mentioned laminate.
Above-mentioned high-frequency circuit in the preferred above-mentioned high-frequency unit has high order harmonic component and reduces circuit between said switching circuit and above-mentioned antenna terminal, above-mentioned high order harmonic component reduces circuit and is made of above-mentioned electrode pattern in above-mentioned laminate.
The installed surface of preferred above-mentioned laminate is below 7mm is square.
The electrode pattern that preferred above-mentioned the 2nd channel splitting circuit and above-mentioned the 3rd bandwidth-limited circuit are used, in described laminate, be configured in the zone by grounding electrode clamping up and down, above-mentioned zone is by grounding electrode pattern clamping up and down, between above-mentioned zone and other zones, the a plurality of pore electrods of crossing that are connected with above-mentioned grounding electrode pattern up and down are configured to the row shape, by above-mentioned grounding electrode pattern and the above-mentioned pore electrod of crossing, can prevent the interference of the electrode pattern that electrode pattern and other zones in the above-mentioned zone are interior.
Preferred above-mentioned low noise amplifies the semiconductor element of usefulness, be equipped on electrode pattern zone that above-mentioned the 2nd channel splitting circuit and above-mentioned the 3rd bandwidth-limited circuit use almost directly over laminate above, amplify between the semiconductor element of usefulness and the electrode pattern that above-mentioned the 3rd bandwidth-limited circuit is used at above-mentioned low noise, be provided with the grounding electrode pattern.
The coupling circuit that preferred above-mentioned detecting circuit is used is formed in the above-mentioned laminate, electrode pattern and width of cloth circuit electrode pattern relative up and down and quilt grounding electrode pattern clamping up and down of the main line of above-mentioned coupling circuit in the lamination direction, have grounding electrode pattern with electrode pattern and above-mentioned width of cloth circuit on electrode pattern at above-mentioned main line, the a plurality of pore electrods of crossing that are connected with above-mentioned grounding electrode pattern up and down are surrounded with electrode pattern and above-mentioned width of cloth circuit above-mentioned main line with electrode pattern.
Communicator of the present invention is characterised in that to have above-mentioned high-frequency unit.
Description of drawings
Fig. 1 is the block diagram of expression based on the high-frequency circuit of one embodiment of the present of invention.
Fig. 2 is the figure of an example of equivalent electric circuit of the high-frequency circuit of presentation graphs 1.
Fig. 3 (a) is the figure of the equivalent electric circuit of employed the 1st power amplification circuit in the expression high-frequency circuit of the present invention.
Fig. 3 (b) is the figure of the equivalent electric circuit of employed the 2nd power amplification circuit in the expression high-frequency circuit of the present invention.
Fig. 4 is the figure of the equivalent electric circuit of an example of employed low noise amplifier circuit in the expression high-frequency circuit of the present invention.
Fig. 5 is the figure of another routine equivalent electric circuit of employed low noise amplifier circuit in the expression high-frequency circuit of the present invention.
Fig. 6 is the figure of the equivalent electric circuit of the another example of employed low noise amplifier circuit in the expression high-frequency circuit of the present invention.
Fig. 7 is the figure of the equivalent electric circuit of the another example of employed low noise amplifier circuit in the expression high-frequency circuit of the present invention.
Fig. 8 is the figure of the equivalent electric circuit of the another example of employed low noise amplifier circuit in the expression high-frequency circuit of the present invention.
Fig. 9 is the block diagram of expression based on the high-frequency circuit of another embodiment of the present invention.
Figure 10 is the block diagram of expression based on the high-frequency circuit of another embodiment of the present invention.
Figure 11 (a) is the block diagram of the function of employed variable notch filter circuit in the expression high-frequency circuit of the present invention.
Figure 11 (b) is the block diagram of the function of employed variable notch filter circuit in the expression high-frequency circuit of the present invention.
Figure 12 is the figure of an example of employed variable notch filter circuit in the expression high-frequency circuit of the present invention.
Figure 13 is a curve chart of roughly representing the S21-frequency characteristic of employed variable notch filter circuit in the high-frequency circuit of the present invention.
Figure 14 is the vertical view of the high-frequency unit of expression one embodiment of the present of invention.
Figure 15 is the back view of the high-frequency unit of expression one embodiment of the present of invention.
Figure 16 is the expanded view of a part of the ceramic substrate of the expression high-frequency unit that constitutes one embodiment of the present of invention.
Figure 17 is the expanded view of remainder of the ceramic substrate of the expression high-frequency unit that constitutes one embodiment of the present of invention.
Figure 18 is the expanded view of a part of the ceramic laminated substrate of the expression high-frequency unit that constitutes one embodiment of the present of invention.
Figure 19 is the vertical view of formed electrode pattern in the ceramic layer of the expression high-frequency unit that constitutes one embodiment of the present of invention.
Figure 20 is the curve chart of gain characteristic of the low noise amplifier circuit of expression embodiment 1,2 and comparative example 1.
Figure 21 is the figure of equivalent electric circuit that represents an example of high-frequency circuit in the past.
Figure 22 is another routine block diagram of representing high-frequency circuit in the past.
Figure 23 is the figure that represents low noise amplifier circuit in the past.
Embodiment
[1] high-frequency circuit
High-frequency circuit of the present invention optionally uses first and second frequency bands.General first frequency band is higher than second frequency band.Fig. 1 represented can be in WLAN (IEEE802.11a and/or IEEE802.11h) these two communication systems of the WLAN (IEEE802.11b and/or IEEE802.11g) of first frequency band (2.4GHz frequency band) and second frequency band (5GHz frequency band) high-frequency circuit shared, one embodiment of the present invention.This high-frequency circuit has: the detecting circuit (DET) 102 of the switching circuit (SPDT1) 101 that the antenna terminal Ant that is connected with multiband antenna is connected, the transmitting line side that is connected switching circuit (SPDT1) 101 and the 1st channel splitting circuit (Dip1) 103 that is connected with detecting circuit (DET) 102.
The 1st channel splitting circuit (Dip1) 103 is made of lower frequency side filter circuit and high frequency side filter circuit, and the lower frequency side filter circuit passes through the transmission signal of 2.4GHz band radio LAN, makes the transmission signal attenuation of 5GHz band radio LAN.On the other hand, the high frequency side filter circuit passes through the transmission signal of 5GHz band radio LAN, makes the transmission signal attenuation of 2.4GHz band radio LAN.
The lower frequency side filter circuit of the 1st channel splitting circuit (Dip1) 103 is connected with the 1st power amplification circuit (PA1) 105, the 1st power amplification circuit (PA1) 105 is connected with the 1st bandwidth-limited circuit (BPF1) 107, and the 1st bandwidth-limited circuit (BPF1) 107 is connected with the transmission terminal Tx-b of 2.4GHZ band radio LAN.Bandwidth-limited circuit (BPF1) 107 will send contain in the signal with overseas noise remove, 105 pairs of transmission signals from the transmitter side circuit input of 2.4GHz band radio LAN of the 1st power amplification circuit (PA1) amplify, and the lower frequency side filter circuit of the 1st channel splitting circuit (Dip1) 103 makes the high order harmonic component decay that produces in the 1st power amplification circuit (PA1) 105.
The high frequency side filter circuit of the 1st channel splitting circuit (Dip1) 103 is connected with low pass filter (LPF) 104, low pass filter (LPF) 104 is connected with the 2nd power amplification circuit (PA2) 106, the 2nd power amplification circuit (PA2) 106 is connected with the 2nd bandwidth-limited circuit (BPF2) 108, and the 2nd bandwidth-limited circuit (BPF2) 108 is connected with the transmission terminal Tx-a of 5GHZ band radio LAN.Bandwidth-limited circuit (BPF2) 108 will send contain in the signal with overseas noise remove, 106 pairs of transmission signals from the transmitter side circuit input of 5GHz band radio LAN of the 2nd power amplification circuit (PA2) amplify, low pass filter (LPF) 104 passes through the transmission signal after the amplification, and makes the high order harmonic component decay that produces in the 2nd power amplification circuit (PA2) 106.
The receiving lines side of switching circuit (SPDT1) 101 is connected with low noise amplifier circuit (LNA) 109, then, is connected with the 2nd channel splitting circuit (Dip2) 110.The received signal of 109 pairs of 2.4GHz band radio of low noise amplifier circuit (LNA) LAN and the received signal of 5GHz band radio LAN are amplified.For low noise amplifier can be amplified the received signal of 2.4GHz frequency band and 5GHz band radio LAN, wish that it covers wide band.By adopting back segment at low noise amplifier circuit (LNA) to be provided with the formation of the 1st frequency band (2.4GHz frequency band) and the 2nd frequency band (5GHz frequency band) being carried out the channel splitting circuit (Dip2) of partial wave, do not need as circuit structure in the past, to use two low noise amplifiers, can realize the miniaturization and the cost degradation of high-frequency circuit, and then also channel splitting circuit and band-pass circuit need be set at the input side of low noise amplifier, therefore can improve receiving sensitivity.
The 2nd channel splitting circuit (Dip2) 110 is made of lower frequency side filter circuit and high frequency side filter circuit, and the lower frequency side filter circuit passes through the received signal of 2.4GHz band radio LAN, makes the receiving signal attenuation of 5GHz band radio LAN.In addition, the high frequency side filter circuit passes through the received signal of 5GHz band radio LAN, makes the receiving signal attenuation of 2.4GHz band radio LAN.By the signal after low noise amplifier (LNA) 109 amplifications, by the 2nd channel splitting circuit (Dip2) 110 partial waves, 2.4GHz the received signal of band radio LAN is exported to the receiving terminal Rx-b of 2.4GHz band radio LAN via the 3rd bandwidth-limited circuit (BPF3) 111, the received signal of 5GHz band radio LAN is exported to the receiving terminal Rx-a of 5GHz band radio LAN.
Detecting circuit (DET) 102 can be arranged between the 1st channel splitting circuit 103 and each power amplification circuit 105,106, but needs two detecting circuits in this case, is unsuitable for miniaturization.Also can in each power amplification circuit 105,106, detecting circuit be set.In detecting circuit (DET) 102,, come the detection High frequency power with diode by detection according to the detected transmission signal of coupler.Detection signal is fed through RFIC circuit etc., is used for the control of power amplification circuit 105,106.
For the transmission signal after the 1st power amplification circuit (PA1) 105 amplifies is passed through, and make the high order harmonic component decay that produces in the 1st power amplification circuit (PA1) 105, can between the 1st channel splitting circuit 103 and the 1st power amplification circuit (PA1) 105, low-pass filter circuit be set.And, also can between the reception terminal Rx-a of the 2nd channel splitting circuit (Dip2) 110 and 5GHz band radio LAN, bandwidth-limited circuit be set.
Fig. 2 represents an example of the equivalent electric circuit of high-frequency circuit shown in Figure 1.Switching circuit 101 mainly is made of switch elements such as field-effect transistor (FET) or diodes, has suitable inductor and capacitor, for example SPDT (Single Pole Dual Throw) formula preferably.
Between switching circuit 101 and antenna terminal Ant, the high order harmonic component that resonant circuit constituted that is provided with by inductor ls1 and capacitor cs1 reduces circuit.This high order harmonic component reduces the combination that circuit can be by low pass filter, notch filter or inductance element and bridging condenser etc. and constitutes.Constituting under the situation of high order harmonic component reduction circuit by low pass filter, can guarantee high attenuation in the broadband more than passband, but the insertion loss is bigger, circuit scale also increases.Constituting under the situation of high order harmonic component reduction circuit,, can only in specific resonance frequency, obtain attenuation though it is little to insert the loss ratio low pass filter by notch filter.Under the situation of the combination of using inductor and bridging condenser, though can will insert less that loss suppresses, attenuation is littler than low pass filter and notch filter.Therefore, the attenuation that consideration needs, insertion loss, circuit scale etc. select high order harmonic component to reduce the formation of circuit.Reduce circuit by high order harmonic component, the 2nd high order harmonic component that is produced in can the low noise amplifier circuit (LNA) 109 with the 1st high order harmonic component that produced in the detecting circuit and receiver side together reduces.
The high-pass filtering circuit that low-pass filter circuit that the 1st channel splitting circuit 103 is made of inductor ltd1, ltd2 and capacitor ctd1 and inductor ltd3 and capacitor ctd2～ctd4 are constituted constitutes.The high-pass filtering circuit that low-pass filter circuit that the 2nd channel splitting circuit 110 is made of inductor lrd1 and inductor lrd3 and capacitor crd2～crd4 are constituted constitutes.The formation of these channel splitting circuits is not limited in the combination of low-pass filter circuit and high-pass filtering circuit, also can be the combination of various filter circuits.
The 1st bandwidth-limited circuit 107 is made of magnetic-coupled inductor ltbb1, ltbb2 and capacitor ctbb1～ctbb5.The resonance frequency of the parallel circuits of inductor ltbb1 and capacitor ctbb4, and the resonance frequency of the parallel circuits of inductor ltbb2 and capacitor ctbb2 are set in the transmission frequency of 2.4GHz band radio LAN.
The 2nd bandwidth-limited circuit 108 is made of magnetic-coupled inductor ltab1～ltab3 and capacitor ctab1～ctab5.The resonance frequency of the parallel circuits of inductor ltab1 and capacitor ctab2, and the resonance frequency of the parallel circuits of inductor ltab2 and capacitor ctab4 are set in the transmission frequency of 5GHz band radio LAN.Inductor ltab1 and ltab2 be ground connection via inductor ltab3.By this formation, increased the passband width, can access a kind of at the band territory of the broad 5GHz frequency band (band pass filter that also can use in 4.9～5.85GHz).
The 3rd bandwidth-limited circuit 111 is made of magnetic-coupled inductor lrbb1, lrbb2 and capacitor crbb1～crbb5.The resonance frequency of the parallel circuits of the resonance frequency of the parallel circuits of inductor lrbb1 and capacitor crbb2 and inductor lrbb2 and capacitor crbb4 is set in the receive frequency of 2.4GHz band radio LAN.
Low-pass filter circuit 104 is made of the parallel circuits of inductor ltd4 and capacitor ctd6 and capacitor ctd5, the ctd7 of the electric capacity between generation and the ground.The resonance frequency of the parallel circuits of inductor ltd4 and capacitor ctd6 is set as 2～3 times frequency of the transmission frequency of 5GHz band radio LAN.
Be arranged on the detecting circuit 102 between switching circuit 101 and the 1st channel splitting circuit 103, reduce circuit, Schottky diode and voltage smoothing circuit by coupling circuit, match circuit, high order harmonic component and constitute.Coupling circuit is the directional coupler that is made of main line lc1, auxiliary line lc2 and terminal resistance Rc.In addition, coupling circuit also can be made of capacitor.Between coupling circuit and Schottky diode Ds, be connected with transmission lines lc3 as match circuit, and the resistance R c1 that reduces circuit as high order harmonic component.The voltage smoothing circuit that Schottky diode Ds is constituted via capacitor Cs and resistance R s, Vpd is connected with the detection lead-out terminal.From detection lead-out terminal Vpd, export the corresponding dc voltage of output voltage with the 1st or the 2nd power amplification circuit 105,106.
In this equivalence circuit, the main circuit (power amplification circuit) of the 1st and the 2nd power amplification circuit 105,106 is formed in the semiconductor element.The equivalent electric circuit of the 1st and the 2nd power amplification circuit 105,106 is shown in Fig. 3 (a), Fig. 3 (b).
The 1st power amplification circuit 105 is by 2 grades amplifying circuits (105a constitutes by semiconductor element), the input matching circuit that is connected with input In-L is (by inductor lbi1, lbi0, lbi2 and capacitor C1 constitute), the output matching circuit that is connected with output Out-L is (by inductor lbo1～lbo4 and capacitor cbo1, C3, C9 constitutes), the bias control circuit that is connected with bias voltage control terminal Ven-b is (by inductor lbv2a, lbv2b, lbv2c and capacitor C4, C5 constitutes), and the voltage supply circuit that is connected with voltage supply terminal Vcc1 is (by inductor lbv1, L1 and capacitor C6, Cd constitutes) constitute.
The 2nd power amplification circuit 106 is by 3 grades amplifying circuits (106a constitutes by semiconductor element), the input matching circuit that is connected with input In-H is (by inductor lai1～lai4, capacitor cai1, and resistor R 2 constitutes), the output matching circuit that is connected with output Out-H is (by inductor lao1～lao5 and capacitor cao1, cao2, C14, C40 constitutes), the bias control circuit that is connected with bias voltage control terminal Ven-a is (by inductor lav6, lav7, pav9 and capacitor C15, C20 constitutes), and the voltage supply circuit that is connected with voltage supply terminal Vcc2 is (by inductor lav1, lav2, pav7, L2, lav5, pav5 and capacitor cav1～cav3, C17, C19, Ce constitutes) constitute.
Fig. 4 has represented the equivalent electric circuit of low noise amplifier circuit 109.Low noise amplifier circuit 109 by the semiconductor element that constitutes its main circuit (amplifying circuit) (transistor) 109a, be arranged on its peripheral inductor ll1, ll2, ll3, ll4,5,6, LL1, capacitor CL1, CL2, CL4, CL5 and resistor R L1～RL3 and control voltage terminal Vdd-LNA constitutes.Capacitor CL1, CL2 end direct current, and resistor R L1, RL3 adjust the operating point of low noise amplifier, and inductor LL1 is provided direct current by power supply Vdd-LNA, plays the effect that the high-frequency signal that prevents passband leaks into the choke inductor of power supply.Resistor R L2 feeds back to input side by the part with output signal, obtains the input and output coupling in the wide band.As shown in Figure 4, in this feedback circuit, the node of the outlet line that the node of the incoming line that is connected with the base stage of transistor 109a is connected with the collector electrode with transistor 109a is via the resistor R L2 that is connected in series, inductor ll3 and capacitor CL2 and connect.Capacitor CL4, CL5 are the noise cutting off capacitors that the noise from power line is absorbed.The vibration that causes for a part that prevents high-frequency signal flows to power supply preferably is set at capacitor CL4, CL5 the almost impedance of short circuit in the frequency of passband.
Can also replace low noise amplifier circuit shown in Figure 4 109, use the low noise amplifier circuit of formation shown in Figure 5.Low noise amplifier circuit shown in Figure 5 has transistor 1, the incoming line that is connected with the base stage of transistor 1, the outlet line that is connected with the collector electrode of transistor 1 and the part that will export feeds back to the feedback circuit of the input and output coupling that obtains wide band in the input.Feedback circuit has the node 2 of the outlet line between lead-out terminal Out-LNA and the collector electrode and the node 3 of the incoming line between input terminal IN-LNA and the base stage, the formation that connects via resistor R L12.And, between the base stage of node 3 and transistor 1, be connected with capacitor CL11.
In low noise amplifier circuit shown in Figure 5, because feedback quantity only determines that by resistor R L12 therefore, capacitor CL11 does not need big capacity.Capacitor CL11 for example can be set at the low electric capacity of 2pF degree in the 2.4GHz frequency band.Like this, can be with the part of capacitor CL11 as match circuit.By the capacitor CL11 of low capacity, the signal that can shorten the ON-OFF control of transistorized base voltage rises the needed time.Relative therewith, in low noise amplifier circuit in the past shown in Figure 23, in feedback circuit with resistor R L12 capacitor connected in series CL11, for the voltage of base stage side and the voltage of collector electrode side are separated, the signal of passband is fed back to input side from the outlet side of low noise amplifier circuit, for example in 2～6GHz frequency band, need to have the electric capacity of 15pF degree.
And, as shown in Figure 5,, can make the gain characteristic planarization of low noise amplifier circuit by between the base stage of node 3 and transistor 1, being connected capacitor CL11.That is, that the capacitor CL11 with appropriate electric capacity has is big in low frequency, less impedance in high frequency, therefore can reduce the frequency dependence of the gain of low noise amplifier circuit.This formation is suitable for the amplification of the received signal of multi-band communication systems, if making its gain inequality in two above frequency bands is below the 5dB, then can access the high-frequency circuit of multiband communication [for example 2.4GHz band radio LAN (IEEE802.11b and/or IEEE802.11g) and these two communication systems of 5GHz band radio LAN (IEEE802.11a and/or IEEE802.11h)] usefulness with outstanding receiver side circuit.Relative therewith, capacitor CL12 is arranged on low noise amplifier circuit in the past shown in Figure 23 in the feedback circuit, in its gain chevron is arranged, the wide band characteristic is relatively poor.
In low noise amplifier circuit shown in Figure 5, the grounded emitter of transistor 1.The supply power terminal Vcc that direct current is supplied with usefulness is connected with outlet line via inductance component L L11.Inductor LL11 brings into play function as choke induction, by with the combination of ground capacitor CL14, prevent that the high-frequency signal of passband from leaking to power supply.Between the capacitor CL11 and base stage of incoming line, be connected with control power supply terminal Vb via resistor R L11.Resistor R L11 adjusts the operating point of low noise amplifier circuit.And, between the node 3 of incoming line and input terminal In-LNA, be connected with DC cut-off capacitance device CL12, between the node 2 of outlet line and lead-out terminal Out-LNA, be connected with DC cut-off capacitance device CL13.
The formation of supply power and control power supply is not limited in shown in Figure 5, can also adopt other formations.For example shown in Figure 6, by supply power terminal Vcc is connected with incoming line via resistor R L11, and be connected with outlet line via inductor LL11, can with 1 power supply terminal Vcc public be supply power and control power supply.Constitute by this, enough 1 power supplys of energy are controlled the switch of low noise amplifier circuit, have realized that simplification, miniaturization and the cost of circuit reduces.As shown in Figure 7, the emitter of transistor 1 also can be via inductor LL13 ground connection.By adjusting the inductance of inductance component L L13, the adjustment of frequency dependence that can gain and input and output coupling.
As shown in Figure 5 and Figure 6, across node 3, be provided with DC cut-off capacitance device CL12 in the incoming line at the opposition side of capacitor CL11.The capacity of the Capacity Ratio DC cut-off capacitance device CL12 of capacitor CL11 is little.The capacity of DC cut-off capacitance device CL12 is set as regards short circuit as in service band, the capacity of capacitor CL11 is set as in service band and brings into play function effectively as capacitor.
Fig. 8 has represented the low noise amplifier circuit of another embodiment of the invention.In this low noise amplifier circuit, the resistance R L12 of feedback circuit and inductor LL12 are connected in series.Because the inductance value of inductor is bigger in high-frequency, therefore the feedback quantity in the frequency higher than low frequency reduces, because the gain in high-frequency raises, the frequency dependence of gain is flattened.For the raising that realizes gaining and the planarization of frequency dependence, wish that inductor LL12 has the self-resonant frequency higher than passband, has the Q value more than 10 in passband.By using this low noise amplifier circuit, the difference of the gain of the low noise amplifier circuit in the different frequency bands can be suppressed at for example below the 5dB.
Fig. 4～low noise amplifier circuit shown in Figure 8 is not limited in high-frequency circuit shown in Figure 1, can also be widely used in having the high-frequency circuit of the enlarging function of received signal.For example, it can be a kind of multiband (two waveband of optionally using different frequency bands, triband etc.) high-frequency circuit used of wireless device, it has the antenna terminal that is connected with the antenna that can receive and dispatch in the different band territory, be transfused to different frequency bands the transmission signal send terminal more than two, output different frequency bands received signal receive terminal more than two, switch the switching circuit of the connection between above-mentioned antenna terminal and above-mentioned transmission terminal or the above-mentioned reception terminal, and be arranged on said switching circuit and the above-mentioned channel splitting circuit that receives more than two between the terminal, in this high-frequency circuit, can between said switching circuit and above-mentioned channel splitting circuit, above-mentioned low noise amplifier circuit be set.In this case, have or not detecting circuit shown in Figure 1, low-pass filter circuit etc. all can, and these setting is without limits.
This low noise amplifier circuit can also be used for the high-frequency circuit that the single band wireless device is used.Fig. 9 represents employed high-frequency circuit in the single band wireless device.This high-frequency circuit has reception terminal Rx, the antenna terminal Ant of the antenna terminal Ant that is connected with the antenna that can receive and dispatch, the transmission terminal Tx that is transfused to the transmission signal, output received signal and the switching circuit that is connected 101 between switching and transmission terminal Tx or the reception terminal Rx.Between switching circuit 101 and reception terminal Rx, be provided with low noise amplifier circuit 109 of the present invention.Between switching circuit 101 and detecting circuit 102, be connected with low-pass filter circuit 104.Other constitute with shown in Figure 1 identical, so omit its explanation.
Figure 10 represents the high-frequency circuit of another execution mode of the present invention.This high-frequency circuit has with high-frequency circuit shown in Figure 1 and similarly constitutes except the input side at low noise amplifier circuit (LNA) has variable notch filter circuit VNF.Variable harmonic filter circuit VNF can be by adjusting the position of attenuation pole from the control input of outside.Variable notch filter circuit VNF passes through the 1st frequency band f1 when the reception of the 1st frequency band f1 (2.4GHz) shown in Figure 11 (a), shown in Figure 11 (b), stops the 1st frequency band f1 when the reception of the 2nd frequency band f2 (5GHz).Like this, a part of signal of employed two above communication systems is stoped, can add the not function of signal that stops outside the employed frequency band.Therefore, variable notch filter circuit VNF prevents that the different signal of frequency band from entering into low noise amplifier circuit (LNA), thereby prevents the caused distortion of interference of unlike signal.This be that occupation mode was different in the past for purpose only to reduce unwanted high order harmonic component.
Figure 12 represents the example that the circuit of above-mentioned variable notch filter circuit VNF constitutes.Resistance R that variable notch filter circuit VNF has that capacitor C that an end is connected with the circuit of received signal, inductor L, an end that an end is connected with capacitor C are connected with inductor L and the switching circuit D of other end ground connection, an end are connected with node between inductor L and the switching circuit D and the voltage terminal VC that is connected the other end of resistance R in order to give switching circuit D on-load voltage.By using bias voltage that switching circuit D is carried out ON/OFF control, can adjust the attenuation pole of variable notch filter circuit VNF from voltage terminal VC.
Switching circuit D can pass through FET (field-effect transistor) or diode constitutes.The switching circuit D that is made of FET can carry out the high speed switching with low drive current, in addition, has among the switching circuit D that diode constituted at a low price and small-sized commercially available prod.Capacity when diode is preferably selected the such OFF of PIN diode is about the little diode of 0.3～0.5pF.PIN diode plays the function of the small inductance with 0.1nH degree when ON.For example, be about 2pF if establish capacitor C, inductor L is about 1nH, and then the ON/OFF by diode controls and changes the LG resonance frequency, shows transmission characteristic (S parameter S 21) for example shown in Figure 13.The centre frequency of attenuation pole is f1 (2.4GHz) when the ON of diode, is f2 (5GHz) when OFF.Therefore, variable notch filter circuit VNF is made as OFF with diode when the reception of the 1st frequency band f1, the 1st frequency band f1 is passed through.In addition, when the reception of the 2nd frequency band (f2=5GHz), diode is made as ON, makes the 1st frequency band f1 decay.Like this, can access the high-frequency circuit that the two waveband WLAN of using 2.4GHz and 5GHz frequency band is used.In addition, f2 also needs not be 5GHz, like this, can prevent that the undesired signal of frequency f 2 from flowing in the low noise amplifier circuit (LNA), makes the signal skew of the 1st frequency band f1.
Under the situation of using variable notch filter circuit, do not need centre frequency f1, the f2 of the 1st and the 2nd frequency band are made as 2.4GHz and 5GHz respectively, can be the combination of optional frequency.In addition, variable notch filter circuit can also be applicable to the multiband communication that triband is above.The prevention band territory of variable notch filter circuit VNF is not limited in the 2.4GHz frequency band, can also use employed 2.6GHz and 3.5GHz band territory among the WiMAX, as the 1st and the 2nd frequency band.
Variable notch filter circuit VNF can be widely used in having the high-frequency circuit of the enlarging function of received signal, and for example the transmitting-receiving that with high-frequency circuit, also possesses transmitting line based on the receiver module of receiving lines is with high-frequency circuit etc.In this case, detecting circuit and low-pass filter circuit etc. are not essential, and can adopt any setting.For example, can will the signal of the 1st frequency band be passed through when the reception of the 1st band signal, the variable notch filter circuit VNF that when the reception of the 2nd band signal, stops the signal of the 1st frequency band, be connected between common terminal (Tcom) and the low noise amplifier circuit (LNA), receive terminal (Rx-a) and the 2nd at low noise amplifier circuit (LNA) and the 1st and receive between the terminal (Rx-b), the channel splitting circuit (Dip2) that the signal of the 1st and the 2nd frequency band is carried out partial wave is set.For being connected of switched antenna terminal and transmission terminal and reception terminal, the high-frequency switch circuit that has 3 ports at least can be arranged in the high-frequency circuit of this formation, make the port go side connection together of the reception terminals side of high-frequency switch circuit.
[2] high-frequency unit
Below, describe with reference to the high-frequency unit of accompanying drawing each embodiment of the present invention, but not special restriction, the related description of each high-frequency unit also can be applicable to other high-frequency units.
Figure 14 represents the high-frequency unit of one embodiment of the present of invention.This high-frequency unit is made of ceramic laminated substrate 200 and parts disposed thereon.Figure 15 represents the terminal arrangement at ceramic laminated substrate 200 back sides.Figure 16 and Figure 17 represent to constitute the electrode pattern that forms in each ceramic layer of ceramic laminated substrate 200.
Have Fig. 2～high-frequency circuit of equivalent electric circuit shown in Figure 4 because this high-frequency unit constitutes, therefore, use the symbol identical with Fig. 2～4.In the equivalent electric circuit shown in Fig. 2～4, being enclosed the element that comes by circle is the element that is installed on ceramic laminated substrate 200, consistent with the symbol of installation elements shown in Figure 14.
The semiconductor element 106a of the semiconductor element 105a of the 1st power amplification circuit 105, the 2nd power amplification circuit 106 and the semiconductor element of switching circuit 101 by nude film (barechip) be installed in ceramic laminated substrate 200 above, and couple together by wire-bonded.For these boarded parts are carried out insulation protection, on ceramic laminated substrate 200, its resin cast is got up.In addition, capacitor Cd, Ce shown in Figure 3 are equipped on the circuit substrate that high-frequency unit is installed.Being to have under the situation of high-frequency unit of variable trap circuit VNF, preferably will be equipped on ceramic laminated substrate 200 by the variable notch filter circuit that chip part constitutes.
Pottery laminated substrate 200 can form by following method manufacturing: for example on each tellite by thick 10～200 μ m that constituted at the ceramic dielectric material LTCC of the able to sinter at low temp below 1000 ℃ (Low-Temperature Co-firedCeramics), conductive slurries such as the Ag of printing low-resistivity or Cu, formed after the electrode pattern of regulation, the a plurality of tellites of lamination, and be sintered into one.
As ceramic dielectric material, for example can list: being main component with Al, Si and Sr (a), is the pottery of auxiliary element with Ti, Bi, Cu, Mn, Na, K etc.; (b) being main component with Al, Si, Sr, is the pottery of auxiliary element with Ca, Pb, Na, K etc.; (c) contain the pottery of Al, Mg, Si, Gd; And (d) contain pottery of Al, Si, Zr and Mg etc.The dielectric constant of ceramic dielectric material is preferably about 5～15.Except ceramic dielectric material, can also use the composite material of resin or resin and ceramic powders.Ceramic substrate can also adopt with Al 2O 3Be the HTCC (high temperature is firing ceramics simultaneously) of main body, but constitute transmission lines etc. by the metal of high temperature sinterings such as tungsten or molybdenum.
The pottery laminated substrate 200 as among Figure 16 and Figure 17 from the superiors in turn shown in, constitute by 16 layers.Each layer made by following method: via hole (via hole) is set, and the filled conductive slip formed pore electrod in via hole in ceramic printed-circuit board, and then form electrode pattern by the printing of conductive slurry.
At the 1st layer above (the superiors), be formed with a plurality of terminal pad electrodes that are used for carrying the chip part that is not built in laminated substrate 200 etc., each terminal pad electrode with cross pore electrod (symbolic representation) and be connected by drawing a circle in square.
In the 2nd layer, be formed with a plurality of line electrodes (ll1～ll4 etc.), grounding electrode G and cross pore electrod.
In the 3rd layer, be formed with capacitor electrode crd2a, ctd2a, wide grounding electrode G and cross pore electrod.
In the 4th layer, be formed with a plurality of line electrodes and a plurality of capacitor electrode and cross pore electrod.The capacitor electrode crd2b of the 3rd layer capacitor electrode crd2a and the 4th layer is opposed, constitutes capacitor crd2.This capacitor crd2 is equivalent to the capacitor crd2 of the 2nd channel splitting circuit 110 shown in Figure 2.Like this, the symbol in the laminate is consistent with the symbol of equivalent electric circuit.Constituting 1 element by a plurality of electrode patterns (for example under the situation of crd2, for example as crd2a, crd2b, to symbol interpolation a, the b etc. of each electrode pattern.
In the layer below the 5th layer, also be formed with line electrode, capacitor electrode, the grounding electrode that has marked the symbol consistent and cross pore electrod with equivalent electric circuit.These line electrodes constitute inductor, and capacitor electrode constitutes capacitor, connect by crossing pore electrod.
In the pottery laminated substrate 200, the part place being equipped with semiconductor element 105a, 106a that power amplification circuit uses is provided with the passage of heat (thermal via) from the surface to the back side in order to improve thermal diffusivity.In order to suppress noise radiation, a plurality of pore electrods of crossing that suitably are provided with the grounding electrode G of wide grounding electrode G or wire and are connected with grounding electrode.
In ceramic laminated substrate 200, be formed with high-frequency circuit with three dimensional constitution, but for the unnecessary electromagnetic interference between the electrode pattern that prevents to constitute the electrode pattern of each element and constitute other elements, by the grounding electrode G (grounding electrode that forms widely or form the grounding electrode of wire, and the pore electrod excessively that is connected with these grounding electrodes) separates, or be set to see non-overlapping copies from the lamination direction.More specifically, when the insulation between the input part of high frequency power amplifier, power suppling part, efferent is not enough, the misoperation and the vibration of high frequency power amplifier might take place.Therefore, in order fully to guarantee the insulation between these circuit modules, suitably be provided with the grounding electrode on plane and the via hole that is connected with this grounding electrode.
The 2nd channel splitting circuit 110 and the 3rd bandwidth-limited circuit 111 of receiver side are formed in the same area.Figure 18 according to the electrode pattern of expression the 3rd layer, the 7th layer, the 10th layer and the 16th layer can learn, in this zone between the grounding electrode Gd (by the shadow representation relevant portion) of the 3rd layer grounding electrode Ga (by the shadow representation relevant portion) and the 16th layer, will by a plurality of cross wire grounding electrode Gb, Gc (by the shadow representation relevant portion) that pore electrods form be arranged on the 7th layer with the 10th layer in.If in grounding electrode Ga, Gd institute area surrounded (representing by 300 among Figure 18), the electrode pattern of the 2nd channel splitting circuit 110 and the 3rd bandwidth-limited circuit 111 usefulness is set, has then suppressed the interference between the electrode pattern (the particularly electrode pattern of transmitting system) of these electrode patterns and other circuit.
The semiconductor element 109a of low noise amplifier circuit 109, on ceramic laminated substrate 200, be equipped on zone 300 directly over the position, between semiconductor element 109a is with regional 300, be provided with grounding electrode (grounding electrode Ga particularly shown in Figure 180).For the miniaturization of high-frequency unit, wish the 2nd channel splitting circuit 110 and the 3rd bandwidth-limited circuit 111 and low noise amplifier circuit 109 close settings.If but the input signal of low noise amplifier circuit 109 (from the received signal of antenna input) disturbs with the 3rd bandwidth-limited circuit 111, gain reduction or vibration etc. then might take place.Therefore, in order to suppress to disturb, between low noise amplifier circuit 109 and the 3rd bandwidth-limited circuit 111, grounding electrode is set.
Constituting the main line lc1 and the auxiliary line lc2 of the coupling circuit in the detecting circuit 102, is respectively the 6th layer line electrode lc1 and the 10th layer line electrode lc2.Main line lc1 and auxiliary line lc2 are arranged on the lamination direction.Line electrode lc1, lc2 be by wire grounding electrode (for example wire grounding electrode Ge by shadow representation among Figure 19) and a plurality of via hole electrodes surrounding of being connected with grounding electrode, and on the lamination direction by the 3rd layer of grounding electrode Ga and the 14th layer of grounding electrode Gd clamping.By so surrounding main line lc1 and auxiliary line lc2 with grounding electrode, can constitute a kind of suppressed and other circuit between the coupling coupling circuit preferably of interference.
As shown in figure 15, be provided with a plurality of bigger grounding electrode G at central part place, the back side of ceramic laminated substrate 100, and, in four limit portions, be provided with antenna terminal Ant1,2.4GHz the transmission terminal Tx-b of band radio LAN and reception terminal Rx-b, the transmission terminal Tx-a of 5GHz band radio LAN and reception terminal Rx-a, earth terminal G, the control terminal V1 of switching circuit control usefulness, V2, the bias voltage control terminal Ven-a that power amplification circuit is used, Ven-b, voltage supply terminal Vcc1, Vcc2, the control voltage terminal Vdd-LNA that low noise amplifier circuit is used, and the lead-out terminal Vpd of detecting circuit.In the present embodiment, terminal electrode has adopted LGA (Land Grid Array), but also can adopt BGA (Ball Grid Array) etc.
The ceramic laminated substrate 200 of present embodiment can small-sizedly turn to 7mm square following (for example 6.5mm * planar dimension 5.3mm) and the thickness of 0.6mm.In addition, even nude film is installed semiconductor element and carried out resin-sealedly, also the height of ceramic laminated substrate 200 can be suppressed be 1.3mm.Therefore, because the planar dimension of small-sized ceramic laminated substrate in the past mostly is most 9mm * 6mm degree, so, erection space can be reduced to below 2/3.
The high-frequency unit of present embodiment has good reception sensitivity.Particularly, the input side of low noise amplifier is provided with the noise figure of the receiving lines in the high-frequency unit in the past of channel splitting circuit and bandwidth-limited circuit, in the 2.4GHz band is 3.5dB, in the 5GHz band is 4.0dB, relative therewith, in the high-frequency unit of present embodiment, in the 2.4GHz band, be 1.5dB, be 1.8dB in the 5GHz frequency band, very little.By using a plurality of such high-frequency units, can make up a kind of front end (front end) portion that carries out the switching of a plurality of antennas and transmitting-receiving circuit.Like this, can constitute the WLAN communicator of the high communication speed and the quality of IEEE802.11n correspondence.
Embodiment 1,2 and comparative example 1
Fig. 5, Fig. 8 and low noise amplifier circuit ( embodiment 1,2 and comparative example 1) shown in Figure 23 are made of the circuit element with the constant shown in the following table 1 respectively.Figure 20 represents their gain characteristic.
Table 1
Circuit element Embodiment 1 (Fig. 5) Embodiment 2 (Fig. 8) Comparative example 1 (Figure 23)
CL11 2pF 2pF 15pF
RL12 560Ω 560Ω 560Ω
CL12、CL13 15pF 15pF 15pF
CL14 100pF 100pF 100pF
RL11 56kΩ 56kΩ 56kΩ
LL11 8.2nH 8.2nH 8.2nH
LL12 - 3.9nH -
In comparative example 1, the gain inequality in 2.4～5.85GHz frequency band range is greatly to 5dB, and rising based on the signal of the ON/OFF control of transistorized base voltage also is 0.8 μ sec.Among the embodiment 1, suppressed the gain of the lower frequency side of 1～2GHz and risen, guaranteed more than the 12dB that in 2.4～5.85GHz frequency band range gain inequality is below the 2dB simultaneously, risen to 0.1 μ sec based on the signal of the ON/OFF control of transistorized base voltage.Be provided with in feedback circuit among the embodiment 2 of inductance component L L2, near the gain the 5GHz increases, and gain inequality is below the 1dB, rises to 0.1 μ sec based on the signal of the ON/OFF control of transistorized base voltage.Therefore can learn that low noise amplifier circuit of the present invention has reduced gain inequality, the flatness of gain is outstanding.In the low noise amplifier circuit of embodiment 2, the gain in 2.4～5.85GHz frequency band range is more than the 13dB.
Embodiment 3,4
In the high-frequency unit with high-frequency circuit shown in Figure 1 that variable notch filter circuit is not set (embodiment 3), the 2.4GHz frequency band-signal of 15dBm inputs to low noise amplifier circuit, from 2 times of ripples of the reception terminal output-30dBm of 5GHz.Relative therewith, in the high-frequency unit with the high-frequency circuit shown in Figure 10 that is provided with variable notch filter circuit (embodiment 4), the high order harmonic component generating capacity of exporting from the reception terminal of 5GHz frequency band is lowered to-70dBm, can prevent the deterioration of receiving sensitivity.
Industrial utilizability
High-frequency circuit of the present invention (high-frequency unit) for example can be used in the small-sized multi-band communication apparatus that can share in 2.4GHz band radio LAN (IEEE802.11b and/or IEEE802.11g) and these two communication systems of 5GHz band radio LAN (IEEE802.11a and/or IEEE802.11h). Communication system is not limited in above-mentioned frequency band and communication specification, in addition can also be for example by the corresponding communication system more than 3 of multistage switching high-frequency switch circuit. Multi-band communication apparatus can be enumerated the home electronics such as the peripheral equipment such as the PC such as the Wireless Telecom Equipments such as mobile phone, PC, printer, hard disk, broadband router, FAX, refrigerator, standard TV receiver (SDTV), high definition television machine (HDTV), digital camera and DV etc.

Claims (17)

1. a high-frequency circuit is a kind of the 1st and the 2nd frequency band that optionally uses, and carries out employed high-frequency circuit in the two waveband wireless device of radio communication, has:
Antenna terminal, it is connected with the antenna that can receive and dispatch in the described the 1st and the 2nd frequency band;
Be transfused to the 1st the 2nd reception terminal that receives terminal and export the received signal of described the 2nd frequency band of the received signal of the 1st transmission terminal of the transmission signal of described the 1st frequency band, the 2nd transmission terminal that is transfused to the transmission signal of described the 2nd frequency band, described the 1st frequency band of output;
Switch described antenna terminal and the described the 1st and the 2nd and send terminal or the described the 1st and the 2nd switching circuit that is connected that receives between the terminal;
Being arranged on described switching circuit and the described the 1st and the 2nd sends the 1st channel splitting circuit between the terminal and is arranged on described switching circuit and the described the 1st and the 2nd the 2nd channel splitting circuit that receives between the terminal;
Being arranged on described the 1st channel splitting circuit and the described the 1st sends the 1st power amplification circuit between the terminal and is arranged on described the 1st channel splitting circuit and the described the 2nd the 2nd power amplification circuit that sends between the terminal;
Be arranged on described the 1st power amplification circuit and the described the 1st send the 1st bandwidth-limited circuit between the terminal, be arranged on described the 2nd power amplification circuit and the described the 2nd send the 2nd bandwidth-limited circuit between the terminal and be arranged on described the 2nd channel splitting circuit and described the 1st reception terminal between the 3rd bandwidth-limited circuit;
Be arranged on the detecting circuit between described switching circuit and described the 1st channel splitting circuit; And
Be arranged on the low noise amplifier circuit between described switching circuit and described the 2nd channel splitting circuit.
2. high-frequency circuit as claimed in claim 1 is characterized in that:
Between described the 1st channel splitting circuit and described the 2nd power amplification circuit, be provided with low-pass filter circuit.
3. high-frequency circuit as claimed in claim 1 or 2 is characterized in that:
Be provided with high order harmonic component between described switching circuit and the described antenna terminal and reduce circuit.
4. as any described high-frequency circuit in the claim 1～3, it is characterized in that:
In described the 1st～the 3rd bandwidth-limited circuit at least one, have mutual the magnetic-coupled the 1st and the 2nd inductor and constitute the 1st and the 2nd capacitor of parallel circuits respectively with the described the 1st and the 2nd inductor, the described the 1st and the 2nd inductor is via the 3rd inductor ground connection.
5. as any described high-frequency circuit in the claim 1～4, it is characterized in that:
Described low noise amplifier circuit has: transistor, the incoming line that is connected with described transistorized base stage, the outlet line that is connected with described transistorized collector electrode, have between the node of the node that is arranged on described incoming line and described outlet line and the feedback circuit of the resistor, inductor and the capacitor that are connected in series.
6. as any described high-frequency circuit in the claim 1～4, it is characterized in that:
Described low noise amplifier circuit has: between the node of transistor, the incoming line that is connected with described transistorized base stage, the outlet line, the node that is arranged on described incoming line and the described outlet line that are connected with described transistorized collector electrode and have the feedback circuit of resistor and be arranged on the node of described incoming line and the capacitor between the described transistorized base stage.
7. high-frequency circuit as claimed in claim 6 is characterized in that:
Be provided with inductor in the described feedback circuit with described resistor in series.
8. as any described high-frequency circuit in the claim 5～7, it is characterized in that:
Described transistorized emitter is via inductor ground connection.
9. as any described high-frequency circuit in the claim 1～8, it is characterized in that:
Between described switching circuit and the described low noise amplifier circuit, be connected with when the reception of the signal of described the 1st frequency band, the signal of described the 1st frequency band is passed through, when the reception of the signal of described the 2nd frequency band, stop the variable notch filter circuit of the signal of described the 1st frequency band.
10. a high-frequency unit is applied to optionally using the 1st and the 2nd frequency band, carries out the two waveband wireless device of radio communication, and described high-frequency circuit has:
Antenna terminal, it is connected with the antenna that can receive and dispatch in the described the 1st and the 2nd frequency band;
Be transfused to the 1st the 2nd reception terminal that receives terminal and export the received signal of described the 2nd frequency band of the received signal of the 1st transmission terminal of the transmission signal of described the 1st frequency band, the 2nd transmission terminal that is transfused to the transmission signal of described the 2nd frequency band, described the 1st frequency band of output;
Switch described antenna terminal and the described the 1st and the 2nd and send terminal or the described the 1st and the 2nd switching circuit that is connected that receives between the terminal;
Being arranged on described switching circuit and the described the 1st and the 2nd sends the 1st channel splitting circuit between the terminal and is arranged on described switching circuit and the described the 1st and the 2nd the 2nd channel splitting circuit that receives between the terminal;
Being arranged on described the 1st channel splitting circuit and the described the 1st sends the 1st power amplification circuit between the terminal and is arranged on described the 1st channel splitting circuit and the described the 2nd the 2nd power amplification circuit that sends between the terminal;
Be arranged on described the 1st power amplification circuit and the described the 1st send the 1st bandwidth-limited circuit between the terminal, be arranged on described the 2nd power amplification circuit and the described the 2nd send the 2nd bandwidth-limited circuit between the terminal and be arranged on described the 2nd channel splitting circuit and described the 1st reception terminal between the 3rd bandwidth-limited circuit;
Be arranged on the detecting circuit between described switching circuit and described the 1st channel splitting circuit; And
Be arranged on the low noise amplifier circuit between described switching circuit and described the 2nd channel splitting circuit;
Described high-frequency unit has: be formed with one laminate that a plurality of ceramic dielectric layers of electrode pattern are constituted and the element that is equipped on the surface of described laminate, described electrode pattern constitutes the described the 1st and the 2nd channel splitting circuit and described the 1st～the 3rd bandwidth-limited circuit at least, and described lift-launch element comprises the semiconductor element that described switching circuit, the described the 1st and the 2nd power amplification circuit and described low noise amplifier circuit are used.
11. high-frequency unit as claimed in claim 10 is characterized in that:
Described high-frequency circuit has low-pass filter circuit between described the 1st channel splitting circuit and described the 2nd power amplification circuit, described low-pass filter circuit is made of described electrode pattern in described laminate.
12., it is characterized in that as claim 10 or 11 described high-frequency units:
Described high-frequency circuit has high order harmonic component and reduces circuit between described switching circuit and described antenna terminal, described high order harmonic component reduces circuit and is made of described electrode pattern in described laminate.
13., it is characterized in that as any described high-frequency unit in the claim 10～12:
The installed surface of described laminate is below 7mm is square.
14., it is characterized in that as any described high-frequency unit in the claim 10～13:
The electrode pattern that described the 2nd channel splitting circuit and described the 3rd bandwidth-limited circuit are used, in described laminate, be configured in the zone by grounding electrode pattern clamping up and down, between described zone and other zones, the a plurality of pore electrods of crossing that are connected with described grounding electrode pattern up and down are arranged to the row shape, by described grounding electrode pattern and the described pore electrod of crossing, prevent the interference of electrode pattern and other regional interior electrode patterns in described the zone in.
15. high-frequency unit as claimed in claim 14 is characterized in that:
Described low noise amplifies the semiconductor element of usefulness, be equipped on electrode pattern zone that described the 2nd channel splitting circuit and described the 3rd bandwidth-limited circuit use almost directly over laminate above, amplify between the semiconductor element of usefulness and the electrode pattern that described the 3rd bandwidth-limited circuit is used at described low noise, be formed with the grounding electrode pattern.
16., it is characterized in that as any described high-frequency unit in the claim 10～15:
The coupling circuit that described detecting circuit is used is formed in the described laminate, the main line of described coupling circuit is relative up and down in the lamination direction with electrode pattern with width of cloth circuit with electrode pattern, and by grounding electrode pattern clamping up and down, the a plurality of pore electrods of crossing that are connected with described grounding electrode pattern up and down are surrounded with electrode pattern and described width of cloth circuit described main line with electrode pattern.
17. a communicator is characterized in that:
Has any described high-frequency unit in the claim 4～16.
CNA2007101008937A 2006-04-26 2007-04-24 High-frequency circuit, high-frequency device and communications apparatus Pending CN101064521A (en)

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JP2007056711 2007-03-07
JP2007068870 2007-03-16

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