CN101054673A - Light shield plasma etching method using protective cover - Google Patents
Light shield plasma etching method using protective cover Download PDFInfo
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- CN101054673A CN101054673A CNA2006100748179A CN200610074817A CN101054673A CN 101054673 A CN101054673 A CN 101054673A CN A2006100748179 A CNA2006100748179 A CN A2006100748179A CN 200610074817 A CN200610074817 A CN 200610074817A CN 101054673 A CN101054673 A CN 101054673A
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- 238000001020 plasma etching Methods 0.000 title description 5
- 230000001681 protective effect Effects 0.000 title description 2
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- Drying Of Semiconductors (AREA)
Abstract
The present invention provides a process for etching chromium layer and forming light shield. According to an embodiment, the process for etching chromium comprises the following steps: providing film stacking at manufacture process reaction chamber; patterning the light blockage layer at the film stacking; depositing angle shaped antiabrasion layer at the light blockage layer having patterns; etching the angle shaped antiabrasion layer to expose the chromium layer through the light blockage layer having patterns; and etching the chromium layer. Said process for etching chromium layer in accordance with the present invention is especially suitable to light shield making.
Description
Technical field
The embodiment of the invention relates to the method for plasma etching chromium, particularly relevant for the method for etching chromium layer in the light shield manufacture process.
Background technology
When making unicircuit (IC) or wafer, the pattern of representing the wafer different layers is created by wafer designer.A series of reused covers curtains or light shield are produced by these patterns, so that in the manufacturing processing procedure design of every layer crystal lamella is transferred on the semiconductor substrate.Cover curtain pattern generation system use accurate laser or electron beam with the image transfer of each layer wafer design to relative cover curtain.The purposes of cover curtain extremely is similar to plate, so that every layer of circuit pattern is converted on the semiconductor substrate.Above-mentioned several layers are to use the successive processing procedure to be made, and convert the small electric crystal and the electronic circuit that can comprise each full wafer to.Therefore, the defective in the cover curtain also may be transferred on the wafer, and may disadvantageous effect be arranged to usefulness.Serious defective can make the cover curtain to no avail.Usually, one group 15 to 30 cover curtain can go out a wafer in order to construction, and these cover curtains are reusable.
The cover curtain is to be generally glass or the quartz base plate that a side has one deck chromium.The chromium layer is covered by antireflecting coating and photosensitive photoresistance.In the patterning process process, utilize the part photoresistance exposure in being written under the UV-light and with circuit layout on the cover curtain, and make part solubilized in photographic developer of exposure.The soluble part of photoresistance is to be removed to produce pattern.This pattern makes the below chromium layer of exposure can be etched.Etch process will cover act chromium layer and the antireflecting coating at the last photoresistance place of being removed and remove, that is, the chromium layer of exposure is to be removed.
The another kind cover curtain that is used in patterning is to be known quartzy phase displacement cover curtain.Quartzy phase displacement cover curtain-like is similar to above-mentioned cover curtain, but in quartzy phase displacement cover curtain, the quartz district that chromium floor by the tool pattern exposes is staggered to be to be etched to have to approximate half the degree of depth of optical wavelength greatly in abutting connection with area, and this characteristic can be used for circuit pattern is transferred on the substrate in making processes.The chromium layer is removed after quartz etch.Therefore, when light makes photoresistance exposure on the substrate by quartzy phase displacement cover curtain, penetrate by the upper shed of cover curtain and on photoresistance, only to be 180 degree phase differential (out of phase) with respect to light by tight adjacent openings.Therefore, may therefore cause the light tight distribution in the photoresistance prospective region only being offseted of cover curtain edge scatter by 180 degree phase differential that the scattering of light at adjacent openings edge caused.The light tight distribution helps to make the feature with less critical size to appear.Similarly, the cover curtain that is used for the little shadow of Chrome-free etching also can utilize the phase displacement of the light that causes by the quartzy part of two cover curtains to make photoresistance have image, and the light of improveing by this in order to development photoresistance pattern distributes.Use the patterned sin layer of doping molybdenum (Mo) can also realize moving because of a light phase that produces by the cover curtain, this makes only being of the quartz base plate that exposes by the image light of the patterning part of cover curtain and by the opening by patterned layer 180 spend phase differential.
In an etch process, dry-etching, reactive ion etching or plasma etching are for example arranged, plasma body is the tool pattern chromium layer that is used for strengthening on chemical reaction and the etch mask.Unfortunately, known chromium etch process often presents etch bias because of the photoresist that plasma body impacts in order to patterning chromium layer.Because photoresistance is impacted in the chromium etching process, the critical size of the photoresistance of tool pattern can't be transferred on the chromium layer exactly.Therefore, less than about 5 microns cover curtain, known chromium etch process also can't produce acceptable performance for critical size.This result causes the ununiformity of cover curtain etch features and and then reduces to utilize the cover curtain to make the ability of the element characteristics with small-sized critical size.
Along with cover curtain critical size continues reduction, the uniform importance of etching continues to increase.Therefore, need chromium etch process badly with height etch uniformity.
Therefore, the chromium etch process that needs a kind of Improvement type.
Summary of the invention
The invention provides the method for etching chromium.In one embodiment, the method for etching chromium comprises: the membrane stack that the photoresist layer with chromium layer and tool pattern is provided in process reaction room; Deposition is protected corneous protective layer on the photoresist layer of tool pattern; Etching conformal shape protective layer and the chromium layer is exposed by the photoresist layer of tool pattern; And etching chromium layer.
The present invention provides the method that forms light shield in addition.In one embodiment, the method that forms light shield comprises: patterning is positioned at the cover curtain layer on the mask layer with one deck chromium layer at least; Deposition conformal shape protective layer is on this mask layer; The etching chromium layer deposits cover curtain layer on it and exposes the below layer by having protective layer; And remove cover curtain layer and protective layer.
Description of drawings
The above cited feature of the present invention has been aided with graphic more detailed Yu the more specific elaboration of doing in above-mentioned comment.Yet being noted that the present invention is additional graphic only for representative embodiment, is not in order to limiting scope of the present invention, and other equivalent embodiment must be included in the scope of the present invention.
Fig. 1 is the perspective cross-sectional slice for the etch reactor that is suitable for the etching chromium layer among the embodiment;
Fig. 2 is the schema for the method for etching chromium layer among the embodiment;
Fig. 3 A to Fig. 3 I is for utilizing the made quartzy light shield of an embodiment of chromium layer engraving method of the present invention;
Fig. 4 A to Fig. 4 G is the made quartzy phase displacement cover curtain of an embodiment who utilizes chromium layer engraving method of the present invention;
Fig. 5 A to Fig. 5 F is the made quartzy phase displacement cover curtain of an embodiment who utilizes chromium layer engraving method of the present invention;
Fig. 6 is the perspective cross-sectional slice for process system embodiment, for example is a cluster tool that comprises Fig. 1 reactor.
For helping to understand, same Reference numeral is to be used in different same elements in graphic in order to expression.
The main element nomenclature
114 matching networks, 112 plasma power sources
120 gas panels, 154 support systems
146 controllers, 148 storeies
152 support circuits, 140 bias power source
142 matching networks, 138 hoisting appliances
156 helium gas source, 166 chuck power sources
168 power of heat source are supplied with 164 vacuum pumps
110 antennas, 122 substrates
116 gas inletes, 124 base for supporting
190 chromium layers, 188 opening
170 process systems, 100 process reaction rooms
134 heating units, 158 gas ducts
144 well heaters, 182 light shield interconnecting devices
320 features, 310 grooves
316 width (critical size), 310 protective layers
418 quartzy phase displacement cover curtain 430 openings
406 anti-reflecting layers, 404 chromium layers
432 protective layers, 434 features
502 quartz layers, 554 damping layers
Embodiment
Fig. 1 illustrates the perspective cross-sectional slice of the etch process reaction chamber 100 of embodiment, wherein can utilize quartz etch method of the present invention.The suitable reactors that can be used in this announcement comprises, and for example has, discrete plasma source (DPS
) II reactor or Tetra I and Tetra II light shield etch system, above-mentioned equipment all can be buied in the Applied Material company that is positioned at California Sheng Tamonika.Etch process reaction chamber 100 also can be used as the processing procedure module of process system 170 as shown in Figure 6, and it for example has the Centura that can buy in Applied Material company
Integrated semiconductor silicon wafer process system.Process system also can comprise first reaction chamber 172 that is suitable for the ashing processing procedure and second reaction chamber 174 that is suitable for polymer deposition.The suitable ashing and the example of cvd reactive chamber comprise AXIOM HT
TMWith Tetra II process reaction room, these also can be in being buied by Applied Material company.
Specific embodiment at the process reaction room 100 that this illustrated is for purposes of illustration, and is not in order to limit scope of the present invention.
Return Fig. 1, process reaction room 100 comprises the process reaction room main body 102 with substrate pedestal 124 usually, and controller 146.Reaction cell body 102 has conductive walls 104 can support a planar dielectric top board 108 haply.Other embodiment of process reaction room 100 can have the top board of other kinds, for example the dome-type top board.Antenna 110 is arranged on the top board 108.Antenna 110 comprises inductive coil element (two coaxial element 110a and 110b be illustrated among Fig. 1) of one or more alternative control.Antenna 110 is coupled on the plasma power source 112 by first matching network 114.Plasma power source 112 extremely can produce the power of about 3000W at adjustable frequency in the scope of about 13.56MHz in about 50kHz usually.In one embodiment, plasma power source 112 provides about 100 to about 600W induction Coupled RF power when the frequency of about 13.56MHz.
Substrate pedestal (negative electrode) the 124th is coupled on the bias power source 140 by second matching network 142.Substrate bias power 140 can provide between about power of 0 to about 600W 1 to about 10kHz the time in about in pulse-repetition.Bias generator 140 produces the output of pulsed RF power.Perhaps, bias generator 140 can produce the output of pulsed D C power.The DC that bias generator 140 can also provide definite value with and/or the output of RF power.
Among the embodiment, bias generator 140 is installings for can be in frequency between about RF power that provides 1 to about 10kHz the time less than about 600W, and has the work period between about 10 to about 95%.In another embodiment, bias generator 140 is installings for can be in frequency between about RF power that provides 2 to about 5kHz the time between about 20 to about 150W, and has the work period between about 80 to about 95%.
Be DPS in installing
Among the embodiment of reactor, the base plate supports base comprises electrostatic chuck 160.Electrostatic chuck 160 comprises at least one folder pincers electrode 132 and is controlled by chuck power supply 166.In alternative embodiment, substrate pedestal 124 can comprise substrate holding mechanism--for example pedestal clamp ring, vacuum chuck, mechanical chuck etc.
Gas panels 120 be connected to process reaction room 100 with provide processing procedure with and/or other gases enter the inside of process reaction room main body 102.In the embodiment shown in Fig. 1, gas panels 120 is on the inlet 116 that is connected in the passage 118 of one or more sidewall that is formed on reaction cell body 102 104.Yet one or more inlet 116 can be positioned on other positions, for example, and on the top board 108 of process reaction room 100.
Among the embodiment, gas panels 120 is in order to provide the fluorizated process gas 116 to enter the inside of process reaction room main body 102 by entering the mouth.In the processing procedure process, plasma body is formed and is maintained by the induction coupled power from plasma power source 112 by process gas.Plasma body is optionally formed by remote control mode or is excited by additive method.Among the embodiment, the process gas that is provided by gas panels 120 comprises at least a in fluorinated gas and the carbonaceous gas.The example of fluoridizing with carbonaceous gas comprises trifluoromethane and tetrafluoro-methane.Other fluorinated gas can comprise one or more gas of fluoridizing in two carbon, hexafluoroization four carbon, perfluoropropane and the Octafluorocyclopentane.
Utilize throttling valve 162 and vacuum pump 164 with the pressure in the control process reaction room 100.Vacuum pump 164 can maintain chamber pressure about 1 to the scope of about 20 millitorrs with throttling valve 162.
Utilization is by the temperature that contains fluid conduits (not shown) may command wall 104 of wall 104.Wall temperature is to maintain about 65 ℃ Celsius usually.Usually, reaction chamber wall 104 is formed and is connected on the electrical ground connection 106 by metal (for example, aluminium, stainless steel etc.).Process reaction room 100 also comprises conventional system such as processing procedure control, built in diagnostics, endpoint detecting.These systems illustrate to be support system 154 jointly.
Light shield interconnecting device 182 be in order to firm substrate 122 (as light shield or other workpiece of doubly contracting) on base plate supports base 124.Light shield interconnecting device 182 has usually by levigate upper surface with covering base 124 lower section 184 of (as, electrostatic chuck 160), and the top 186 with shape and big I supporting substrate 122.On the opening 188 common middle positions that are positioned at haply about base 124.Shifting coupling 182 is formed by single block of material anti-etching, high temperature resistance usually, for example Polyimide pottery or quartzy.Suitable light shield interconnecting device is to be disclosed in to obtain in the U.S. Patent number 6251217 of card January 26 calendar year 2001, and is to incorporate this case content in the reference mode at this.Side ring 126 can cover with and/or with interconnecting device 182 firmly on base 124.
Hoisting appliance 138 is in order to reduction or rising interconnecting device 182, and then makes substrate 122 can place or leave base plate supports base 124.In general, hoisting appliance 138 comprises several liftings by bullport 136 separately and inserts slightly (only illustrate a lifting at this and insert slightly 130).
In operation, utilize the temperature of stabilized baseplate base 124 and the temperature of control basal plate 122.Among the embodiment, base plate supports base 124 comprises well heater 144 and also can comprise radiator element 128.Well heater 144 can have heat exchange fluid mobile fluid conduit systems therein for one or more.In another embodiment, well heater 144 can comprise at least one by power of heat source supply 168 heating units of being regulated and control 134.Perhaps, be that in the admission passage, wherein tunnel-shaped is formed in the susceptor surface of substrate 122 belows by gas duct 158 from the back of the body end gas of gas source (as, helium (He)).Back of the body end gas helps the heat exchange of 122 of base 124 and substrates.In processing procedure, base 124 can utilize embedded well heater 144 and be heated to steady temperature, and with after helium back of the body end gas combines, above-mentioned feature promptly helps the even heating of substrate 122.
Controller 146 comprises the support circuits 152 of central processing unit (CPU) 150, storer 148 and CPU 150, with and help the element control of process reaction room 100 and etch process, this part will be in hereinafter setting forth.Controller 146 can be the used computer processor of the general order of any confession, and it can be used for industry and sets to control various reaction chambers and second processor.The storer 148 of CPU 150 can be the memory component of one or more access at any time, for example the numerical digit of random-access memory (ram), the read only memory (ROM), soft dish, hard disc or any other form stores, no matter be the memory storage of part or remote control.Support circuits 152 is coupled on the CPU 150 to support treater.These circuit comprise access, power supply unit, clock circuit, input/output circuitry, subsystem etc.But method of the present invention normally is stored in storer 148 or other CPU 150 accesses and can be used as in the computer-readable media of software routine.Alternatively, such software routine also can be stored with and/or performed by the 2nd CPU (not shown), wherein the 2nd CPU is remote with the hardware distance that is subjected to CPU 150 control.
Fig. 2 is the schema for the method 200 of etching chromium layer among the embodiment.Although following method 200 relates in order to make the substrate of light shield, method 200 also can be used in other chromium etch application.
May be stored in the storer 148 of controller 146 or the method 200 in other storing medias is with step 202 beginning with the computer-readable form, in step 202, have the substrate 122 that membrane stack is provided with on it and be arranged on the substrate pedestal 124.Among the embodiment, substrate 122 is supported in the opening 188 of interconnecting device 182.Comprise the material that optics penetrates in the membrane stack that is arranged on the substrate 122 that Fig. 1 described based on silicon--for example quartzy (that is silicon-dioxide (Si0,
2) layer 192), it has lighttight light and covers the just so-called photomask materials of chromium layer 190----be positioned at quartz layer 192 lip-deep patterning cover curtains and form.Chromium layer 190 can for chromium with and/or nitrogen chromic oxide.Membrane stack also can comprise the damping layer (not shown)--the silicon nitride (SiN) of the molybdenum that for example mixes (Mo) or molybdenum silicide (MoSi)-and between quartz layer 192 and chromium layer 190.
In step 204, photoresist layer is to be patterned on the chromium layer.Photoresist layer can utilize any suitable method and patterning in addition.Membrane stack can also be arranged on has photoresistance in the process reaction room of patterning.
In step 206, conformal shape protective layer is to be deposited on the photoresist layer of tool pattern.Protective layer can be a polymkeric substance, for example for having the carbon polymer of hydrogen.Protective layer can be deposited to have between about 100 thickness to about 500 dusts, and in another embodiment, thickness can be between about 150 to about 200 dusts.
Among the embodiment, can utilize by one or more fluorine carbon process gas-especially for example for trifluoromethane with and/or Perfluorocyclobutane-formed plasma body deposit protective layer.Perhaps, plasma body can comprise the argon gas that can improve deposition uniformity.Among the embodiment, utilize have between about plasma power of 200 to about 500W and between about substrate bias power of 0 to about 20W to deposit protective layer.In another embodiment, substrate bias power is less than about 10W.The process gas example that is used to form protective layer in plasma process can comprise the trifluoromethane of about 100sccm and the about argon gas of 100sccm, and keeps for some time to the chamber pressure of about 20 millitorrs and arrive about 500 dusts up to protective layer thickness having about 3.
In step 208, utilize protective layer and photoresistance to be used as etch mask with the etching chromium layer.Chromium etching step 208 comprises: the horizontal component that at first removes the protective layer in the opening that is arranged at the tool optical pattern resistances is to expose some parts in the chromium layer.Horizontal component compared to protective layer; because it is very slow to remove on the sidewall that is arranged on the tool optical pattern resistances in the protective layer speed of vertical component; etched and the protective layer that be arranged on the sidewall of optical pattern resistances of chromium layer is the critical size (CD) of keeping its opening haply; cover curtain critical size is transferred on the opening that is formed at the chromium layer exactly, and above-mentioned feature is to betide in the step 208.
In the etching step 208 of embodiment, fluoridizing the formed plasma body of process gas by one or more is to be imported in the process reaction room 100 via gas inlet 116.The example of process gas can include tetrafluoro-methane and trifluoromethane.Process gas can comprise rare gas element in addition, and helium, argon gas, xenon, neon and krypton gas are for example arranged.
In another embodiment, the substrate 122 that contains chromium can utilize Tetra I, Tetra II or DPS
II etching module and to use flow velocity be the trifluoromethane of 2 to 50sccm tetrafluoro-methane and flow velocity 10 to 50sccm and etching in addition.In a specific process recipe, provide and have tetrafluoro-methane that flow velocity is 9sccm and the trifluoromethane of flow velocity 26sccm.Pressure in the process reaction room is controlled in less than about 40 millitorrs, and in one embodiment, be between about 1 and about 10 millitorrs between, 2 millitorrs for example.
In chromium etching step 208 processes, be applied on the base for supporting 124 so that substrate 122 tool bias voltages less than the substrate bias power of about 600W; And in first example, this substrate bias power is less than about 100W, in second example, this substrate bias power between 30 and about 80W between.In a specific process recipe, be the substrate bias power that under about 1 to about 10kHz, applies about 65W in adjustable pulse-repetition.Perhaps, substrate bias power can be above-mentioned impulse form.
In step 208, utilize apply from plasma source power 112 between about 300 with the RF power of about 600W to antenna 110 and be maintained plasma body by the process gas generation.But plasma body also can be excited by additive method.Among the embodiment, the RF power of about 420W is applied on the antenna 110 when the about 13.56MHz of frequency.
The chromium layer 190 that is exposed on the substrate 122 is etched up to reaching terminal point.Terminal point can be determined by time, optical interference measurement, reaction chamber gaseous emission spectrum or other appropriate method.Can in process system 170 that carries out deposition step equally or process reaction room 100, carry out etching step in the original place.
Another example of etch process is to be set forth in the Application No. 10/235,223, and it is applied on September 4th, 2002, is the full content of incorporating this case in the reference mode at this.Other suitable metal etch process also can be used.
In step 210, photoresistance that stays after etch process 208 and protective layer are to be removed.Among the embodiment, utilize the ashing processing procedure to remove photoresistance and the protective layer that stays.Can in process system 170 that carries out etching step 208 equally or process reaction room 100, remove step 210 in the original place.
Fig. 3 A to Fig. 3 G illustrates and utilizes above-mentioned method 200 and be made in membrane stack 300 in the quartzy light shield 340
iEmbodiment.Subscript " i " is an integer, is illustrated in the different production phase in the membrane stack shown in Fig. 3 A to Fig. 3 G.
The membrane stack 300 that in Fig. 3 A, is illustrated
1Comprise and have the quartz layer 302 that chromium layer 304 is provided with thereon.Chromium layer 304 be generally chromium with and/or above-mentioned chromium oxide layer.Membrane stack 300
1Can comprise the anti-reflecting layer 306 (showing) that is formed on the chromium layer 304 with non-sterogram.Anti-reflecting layer 306 can be thin layer or other suitable materials of chromium oxidation.Membrane stack 300
1Also comprise first photoresist layer 308 and be arranged on chromium layer 304 or the anti-reflecting layer 306, if the words that anti-reflecting layer exists.
Conformal shape protective layer 310 is to be deposited on the photoresistance 308.Protective layer 310 covers on the sidewall of the feature 320 that is formed in the photoresistance 308, and this feature also has preset thickness and has the groove 310 of width 316 with definition, and this is the membrane stack 300 that is illustrated among Fig. 3 C
3Selected width 316 is for having the predetermined critical size that will be transferred on the chromium layer 304.
Can utilize by chlorine-containing gas (as, chlorine) or fluoro-gas (as, sulfur hexafluoride or tetrafluoro-methane) formed plasma body is with etching chromium layer 304.Etch process is haply for anisotropic, therefore can break through the protective layer that is positioned at groove 314 bottoms with expose and and then the etching chromium layer, and can not cause great change to width 316.
So, critical size 316 is transferred on the opening 318 that is formed at chromium layer 304, as the membrane stack 300 shown in Fig. 3 D
4
After opening 318 forms on chromium layer 304, can utilize--for example ashing processing procedure--removing first photoresist layer 308 that still exists, and then produce membrane stack 300
5, shown in Fig. 3 E.The removing processing procedure and can additionally remove still the protective layer 310 that exists and stay binary mask 340 of photoresist layer 38.
Perhaps, membrane stack 300
5Can be through further processing to form the phase displacement cover curtain shown in Fig. 3 F to Fig. 3 I.In order to form phase displacement cover curtain, second photoresist layer 324 is at first to be deposited on membrane stack 300
5On, and fill up opening 318 and the membrane stack 300 of formation shown in Fig. 3 F
6 Second photoresist layer 324 then is patterned.Usually when the quartzy phase displacement cover curtain of formation, the quartz layer 302 that second photoresist layer 324 of patterning will be positioned at the bottom of alternate open 318 exposes, as the membrane stack 300 shown in Fig. 3 G
7
The quartz layer 302 that second photoresist layer 324 by the tool pattern exposes is to utilize the etching in addition by the formed plasma body of one or more fluorizated process gas.The example of process gas can comprise tetrafluoro-methane and trifluoromethane.Process gas can comprise rare gas element in addition, and helium, argon gas, xenon, neon and krypton gas are for example arranged.In the process of etching quartz layer 302, the substrate bias power that puts on the base plate supports can be above-mentioned impulse form.
Selected etched terminal point, the feasible membrane stack 300 that is illustrated in Fig. 3 H
8In the degree of depth 328 of the quartzy groove 326 of etching approximately equate with 180 length of spending phase displacements of one section default optical wavelength by quartz layer 302, this wavelength only be used for quartzy phase displacement cover curtain.Usually wavelength is 193 and 124 nanometers.Therefore, the degree of depth 328 is about 172 or 240 nanometers usually, yet other cover curtains that are used in different little shadow optical wavelength can have other degree of depth.After quartzy groove 326 was etched, second photoresist layer 324 that stays was to utilize ashing and removed, so the membrane stack of still retaining 300
9The quartzy phase displacement cover curtain 330 of formation shown in Fig. 3 I.
Fig. 4 A to Fig. 4 G illustrates and utilizes above-mentioned method 200 and be made in membrane stack 400 in the quartzy phase displacement cover curtain 418
iEmbodiment.Subscript " i " is an integer, is illustrated in the different production phase in the membrane stack shown in Fig. 4 A to Fig. 4 G.
The membrane stack 400 that in Fig. 4 A, is illustrated
1Comprise and have the quartz layer 404 that chromium layer 402 is provided with thereon.Chromium layer 404 be generally chromium with and/or above-mentioned chromium oxide layer.Membrane stack 400
1Can comprise the anti-reflecting layer 406 (selectivity) (showing) that is formed on the chromium layer 404 with non-sterogram.Membrane stack 400
1Also comprising first photoresist layer 408 is arranged on chromium layer 404 or the anti-reflecting layer 406, when anti-reflecting layer exists.First photoresist layer 408 is to be patterned the opening 430 that can expose chromium layer 404 to form, the membrane stack 400 as shown in Fig. 3 B
2
Conformal shape protective layer 432 is to be deposited on the chromium layer 404 and first photoresist layer, and is covered with the bottom and the sidewall of opening 430, as in the membrane stack 400 shown in Fig. 4 C
3The deposition method of protective layer 432 can be relevant with the method for above-mentioned deposition protective layer 310.The thickness of selected protective layer 432 makes that the feature 434 between the vertical side wall that is defined in protective layer 432 has default width 436.
The protective layer 432 and first photoresist layer 408 are to be positioned at the opening 410 of chromium layer 404 as cover curtain with etching, and quartz layer 402 exposes below making, the membrane stack 400 that illustrates as Fig. 4 D that coexists
4Etch process is haply for anisotropic, therefore break through the protective layer 432 that is positioned at feature 434 bottoms with expose and and then etching chromium layer 404, and can not cause great change to width 436.So, be to be transferred on the opening 438 that is formed in the chromium layer 404 by feature 410 defined critical sizes.Chromium layer 404 can be as above-mentioned method and etching in addition.By for example ashing or other appropriate method and the protective layer 432 and first photoresist layer 408 are removed the membrane stack 400 as shown in Fig. 4 E
5
The terminal point of selected quartz etch makes the degree of depth 414 of etched quartzy groove 440 bottoms 416 approximately equate with 180 length of spending phase displacements of one section predetermined wavelength by quartz layer 402, the light of this wavelength such as above-mentioned be to be used for quartzy phase displacement cover curtain.
--for example above-mentioned chromium etch process--to remove the chromium layer 404 that still exists, stays membrane stack 400 at last after groove 440 forms on quartz layer 402, can to utilize suitable processing procedure
7To become quartzy phase displacement cover curtain 442, shown in Fig. 4 G.
Fig. 5 A to Fig. 5 F illustrates and utilizes above-mentioned method 200 and be made in membrane stack 500 in the little shadow cover of the Chrome-free etching curtain 540
iEmbodiment.Subscript " i " is an integer, is illustrated in the different production phase in the membrane stack shown in Fig. 5 A to Fig. 5 F.
The membrane stack 500 that in Fig. 5 A, is illustrated
1Comprise and have the quartz layer 502 that mask layer 504 is provided with thereon.Mask layer 504 bag chrome-containing layer 552-for example chromium with and/or above-mentioned chromic oxide-be arranged on the damping layer 552.Damping layer 554 have usually with by 502 1 sections predetermined wavelengths of quartz layer 180 the degree phase displacements length equate that approximately the light of this wavelength can be used in the quartzy phase displacement cover curtain.Usually wavelength is 193 and 248 nanometers.Therefore, the thickness of damping layer is to be generally about 50 to about 100 nanometers, however for can be used for different little shadow optical wavelength with and/or the cover curtain of different thin materials, other the degree of depth also is suitable for.
One arbitrarily anti-reflecting layer 506 (showing) with non-sterogram can be formed on the mask layer 504.First photoresist layer 508 is to be arranged on mask layer 504 or the anti-reflecting layer 506, when anti-reflecting layer exists.
Conformal shape protective layer 510 is to be deposited on the photoresistance 508.Protective layer 510 covers on the sidewall of the feature 520 that is formed in the photoresistance 508, and this feature also has preset thickness and has the groove 514 of width 516 with definition, and this is the membrane stack 500 that is illustrated among Fig. 5 C
3Selected width 516 is for having the predetermined critical size (for example, damping layer 554 and chromium layer 552) that will be transferred on the mask layer 504.
Can be in one two step process etching mask layer 504, wherein at first etching chromium layer 552, then etching damping layer 554.Utilization by chlorine-containing gas (as, chlorine) or fluoro-gas (as, sulfur hexafluoride or tetrafluoro-methane) formed plasma body is with etching chromium layer 552.Etch process is haply for anisotropic, therefore break through the protective layer bottom 512 that is positioned at groove 514 bottoms with expose and and then the etching chromium layer, and can not cause great change to width 516.
Can utilize by chlorine-containing gas (as, chlorine) with and/or fluoro-gas (as, sulfur hexafluoride or tetrafluoro-methane) formed plasma body is with etching damping layer 554.This two steps etch process is haply for anisotropic, therefore break through the protective layer that is positioned at groove 514 bottoms with expose and and then the etching chromium layer, and can not cause great change to width 516.The chromium layer of patterning is the cover curtain of being used as in order to the etching damping layer.So, critical size now is defined as width 516, is to be transferred on the opening 518 that is formed at mask layer 504, and this is to be illustrated in the membrane stack 500 shown in Fig. 5 D
4
Damping layer 554 can be by comprising (i) one or more fluorine-containing polymerization material; (ii) chlorine-containing gas; Perhaps (iii) rare gas element, the formed plasma body of process gas and etching in addition.Can also comprise a kind of polymerization restriction in the process gas or suppress gas.
One or more fluoro-gas can comprise the fluoro-gas of one or more fluorine-containing hydrocarbon polymer, no hydrogen or above-mentioned combination.One or more contain fluorine hydrocarbon and can have general formula C
XH
YF
Z, wherein x is the carbon atom number, is that 1 to 5 integer, y is the hydrogen atom number, is that 1 to 8 integer and z is the fluorine atom number, is 1 to 8 integer.The example of fluorine-containing hydrocarbon gas comprises trifluoromethane, a fluoromethane, methylene fluoride, pentafluoride ethane, C2H4F2 C2H4F2 and above-mentioned combination.Fluorine-containing hydrocarbon gas with 1 to 2 carbon atom, 1 to 4 hydrogen atom and 1 to 5 fluorine atom, trifluoromethane for example is when can be used for etching damping layer 554.
No hydrogen fluoro-gas can have 1 to 5 carbon atom, and 4 to 8 fluorine atom.The fluorocarbon gas of other no hydrogen can comprise tetrafluoro-methane, hexafluoroethane, hexafluoroization four carbon, perfluoropropane, Perfluorocyclobutane, Octafluorocyclopentane and above-mentioned combination.Perhaps, process gas can comprise extra process gas, for example fluorine sulfide-sulfur hexafluoride (SF
6).
Fluoro-gas can be advantageously used in and form passivation polymer settling, and it is deposited on the surface, particularly sidewall that is formed at the opening in the patterning photoresist and etched optics penetrable material.The polymer deposits of passivation can be avoided the over etching of feature, and then improves the critical size that is transferred on the damping layer 554.But be positioned at the fluorine containing species of the damping layer 554 on the substrate 122 by the formed plasma generation etching of one or more fluorine-containing hydrocarbon gas, and do not need the existence of oxidizing gas.
Chlorine-containing gas is by comprising chlorine (Cl
2), tetracol phenixin (CCl
4),, selected among the group of hydrogenchloride (HCl) and aforesaid combination, and material in order to provide highly reactive free radical to penetrate with etching optics.Chlorine-containing gas provides the source of the free radical of tool etch capabilities, and hydrogen or carbon containing chlorine-containing gas can provide in order to form the sedimental material source of passivation polymer, and this settling can improve etch bias.
Process gas also can comprise rare gas element, and when this rare gas element was dissociated into the plasma body that comprises process gas a part of, it can produce sputtered species and increase the etch-rate of feature.Exist the rare gas element of a part that becomes plasma body also can strengthen dissociating of process gas.In addition, the rare gas element that makes an addition in the process gas forms Ionized sputter species, and can further any polymer deposits sputter on the feature side-wall that etching is just finished be left, therefore reduce any passivation settling and controllable etch-rate is provided.We observe discovery, add rare gas element in the process gas and can improve plasma stability and etch uniformity.The example of rare gas element includes argon gas (Ar), helium (He), neon (Ne), xenon (Xe), krypton gas (Kr) and above-mentioned combination, and wherein argon gas and helium more often use.
In example, the process gas of etching damping layer 554 can comprise chlorine, trifluoromethane, and is the argon gas of rare gas element.Perhaps, process gas can comprise one or more polymerization restriction gas--for example oxygen, ozone, nitrogen or above-mentioned combination--, can utilize sedimental formation of passivation polymer and the etch-rate that removes and then control process gas on the control basal plate.Oxygen-containing gas strengthens the formation of anaerobic species, and these species can form with the polymer (that is passivation settling) that minimizing is deposited on the etch features with other species reactions.For example, some free radicals of oxygen and plasma process--as, CF
2--reaction is to form volatility free radical-for example, COF
2,, it can be by discharging in the process reaction room.
Process gas-comprise rare gas element and selective gas--overall flow rate be to be imported into the flow velocity greater than about 15sccm--for example between the flow velocity of about 15sccm with about 200sccm--are with the optical micro-image light shield substrate of 150 millimeters of etchings in etching reaction chamber * 150 millimeters sizes.Chlorine-containing gas is imported in the process reaction room optical micro-image light shield substrate with one 150 millimeters * 150 millimeters sizes of etching with the flow velocity between between about 5sccm and about 100sccm.When fluoro-gas was directed in the process reaction room, its flow velocity was between about 1sccm and about 50sccm, with the optical micro-image light shield substrate of one 150 millimeters * 150 millimeters sizes of etching.When rare gas element was directed in the process reaction room, its flow velocity was between about 0sccm and about 100sccm, with the optical micro-image light shield substrate of one 150 millimeters * 150 millimeters sizes of etching.Optionally, when polymkeric substance restriction gas was directed in the process reaction room, its flow velocity was between about 1sccm and about 100sccm, with the optical micro-image light shield substrate of one 150 millimeters * 150 millimeters sizes of etching.The number of the indivedual flow velocitys of process gas and the visual processing procedure factor of overall flow rate and changing, the processing procedure factor for example has the size of process reaction room, pending size of substrate and the required special etch profile of operator.
Generally speaking, process reaction room is to maintain between about 2 millitorrs and about 50 millitorrs.In the processing procedure process, can keep chamber pressure between about 3 millitorrs and about 20 millitorrs, for example 3 millitorrs and 10 millitorrs.
After opening 518 forms on chromium layer 504, can utilize--for example ashing processing procedure--removing first photoresist layer 508 that still exists, and then stay membrane stack 500
5, shown in Fig. 5 E.The removing processing procedure and can additionally remove still the protective layer 510 that exists of photoresist layer 508.
The chromium part of mask layer 504 (as, the chromium layer 552 of tool pattern) can utilize suitable processing procedure to be removed, for example use above-mentioned dry-etching processing procedure.By membrane stack 500
6 Left quartz layer 502 forms the little shadow cover of Chrome-free etching curtain 540 with the MoSi layer of tool pattern 554, shown in Fig. 5 F.
Therefore, the invention provides a kind of method of improving the etching chromium layer of groove characteristic.Therefore, help to make in the method for the etching chromium layer of this announcement and be suitable for the feature that patterning has small-sized critical size.
Though preamble has been set forth specific embodiments of the invention, do not breaking away under essence spirit of the present invention and the scope, when can designing other specific embodiments of the present invention, and scope of the present invention is defined by appended claim.
Claims (30)
1. the method for etching one a chromium layer comprises:
Provide a membrane stack in a process reaction room, this membrane stack has the photoresist layer of a chromium layer and a tool pattern;
Deposit conformal shape (conformal) protective layer on the photoresist layer of this tool pattern;
This conformal shape protective layer of etching exposes this chromium layer with the photoresist layer by this tool pattern; And
This chromium layer of etching.
2. the method for claim 1, wherein this sedimentary step comprises:
Deposit a polymkeric substance, it is had between about 100 to the thickness between about 500 dusts.
3. method as claimed in claim 2, wherein this polymkeric substance is to be hydrogenous carbon polymer.
4. the method for claim 1, wherein this sedimentary step comprises in addition:
Form a plasma body by one or more fluorine carbon process gas.
5. method as claimed in claim 4, wherein this one or more fluorine carbon process gas is one of them kind for trifluoromethane or Perfluorocyclobutane.
6. method as claimed in claim 4, wherein this deposition step comprises in addition:
Import argon gas to this plasma body.
7. the method for claim 1, wherein this sedimentary step comprises:
Apply one between about 0 to about 20 watts substrate bias power.
8. the method for claim 1, wherein this sedimentary step comprises:
Apply one less than about 10 watts substrate bias power.
9. method as claimed in claim 7, wherein this deposition step comprises in addition:
The trifluoromethane of the about 100sccm of guiding is to this process reaction room;
The argon gas of the about 100sccm of guiding is to this process reaction room;
Form a plasma body by this trifluoromethane and argon gas; And
Keep a chamber pressure about 3 to about 20 millitorrs.
10. method as claimed in claim 7, wherein this deposition step comprises in addition:
Deposit a carbon polymer, it is had between about 150 to the thickness between about 200 dusts.
11. the method for claim 1, wherein this etching step comprises in addition:
Apply a pulsed bias power.
12. method as claimed in claim 2, wherein this deposition and this etching step are that carry out original place (in-situ) at this process reaction room.
13. a method that forms a light shield comprises:
Cover curtain layer on patterning one mask layer, this mask layer comprise at least one chromium layer;
Deposition one conformal shape protective layer on this cover curtain layer;
This chromium layer of etching is provided with cover curtain layer on it so that a below layer is exposed by having this protective layer; And
Remove this cover curtain layer and this protective layer.
14. method as claimed in claim 13, wherein this sedimentary step comprises:
Deposit a polymkeric substance, it is had between about 100 to the thickness between about 500 dusts.
15. method as claimed in claim 14, wherein this polymkeric substance is for having the carbon polymer of hydrogen.
16. method as claimed in claim 13, wherein this deposition step comprises in addition:
By at least a plasma body that forms in trifluoromethane or the Perfluorocyclobutane.
17. method as claimed in claim 16, wherein this deposition step comprises in addition:
Import argon gas to this plasma body.
18. method as claimed in claim 13, wherein this sedimentary step comprises:
Apply one between about 0 to about 20 watts substrate bias power.
19. method as claimed in claim 13, wherein the step of this etching chromium layer comprises in addition:
Provide at least a fluorine carbon process gas to a process reaction room; And
Utilize several to be arranged in this cover curtain layer on this process reaction room one substrate support with bias voltage less than 600 watts output pulses.
20. method as claimed in claim 13, wherein this of this cover curtain layer and this protective layer remove step can be in this process reaction room original place this step of carrying out this chromium layer of wherein etching be to carry out in existing together.
21. method as claimed in claim 13, wherein to remove step be to carry out the original place in this process system to this of this cover curtain layer and this protective layer, and wherein this process system has process reaction room and couples with it.
22. method as claimed in claim 13, other comprises:
The chromium layer that utilizes the tool pattern is with etching one damping layer (attenuating layer).
23. method as claimed in claim 22, wherein this damping layer comprises molybdenum.
24. method as claimed in claim 22, other comprises:
Remove the chromium layer of this tool pattern.
25. method as claimed in claim 13, other comprises:
The photoresist layer that forms a tool pattern is on the chromium layer of this tool pattern, and wherein at least one first opening in this chromium layer is to fill up with photoresistance, and at least one second opening in the chromium layer is open-minded via the photoresistance of tool pattern;
By this this quartz layer of second opening etching; And
Remove the photoresist layer of this tool pattern.
26. a light shield that is formed by a method comprises:
Patterning is positioned at the photoresist layer on the membrane stack, and this membrane stack has a chrome-containing layer;
Utilization less than 20 watts bias voltage to deposit a conformal shape protective layer on the photoresist layer of this tool pattern;
Utilization as the photoresist layer of this tool pattern of an etch mask and protective layer with this chrome-containing layer of etching; And
Remove this etch mask.
27. light shield as claimed in claim 26, wherein this sedimentary step comprises:
Deposit a polymkeric substance, it is had between about 100 to the thickness between about 500 dusts.
28. light shield as claimed in claim 26, wherein this membrane stack comprises in addition:
One molybdenum layer, it is to utilize as the chrome-containing layer of this tool pattern of an etch mask and patterning in addition; And wherein
At least one part of the chrome-containing layer of this tool pattern is to be removed.
29. light shield as claimed in claim 26, other comprises:
Several etch features are arranged in this quartz layer.
30. light shield as claimed in claim 29, wherein this etch features in this quartz layer is formed by a processing procedure, comprises:
The photoresist layer that forms one second tool pattern is on the chrome-containing layer of this tool pattern, and wherein at least one first opening in this chrome-containing layer is to fill up with photoresistance, and at least one second opening in this chrome-containing layer is open-minded via the photoresistance of this second tool pattern;
This quartz layer of etching by this second opening; And
Remove the photoresist layer of this second tool pattern.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101989035B (en) * | 2009-08-03 | 2012-02-08 | 中芯国际集成电路制造(上海)有限公司 | Method for removing chromium metal film from photographic mask |
| CN102797011A (en) * | 2011-05-26 | 2012-11-28 | 南亚科技股份有限公司 | Method and system for performing pulse-etching in semiconductor device |
| CN103901715A (en) * | 2012-12-24 | 2014-07-02 | 中芯国际集成电路制造(上海)有限公司 | Mask plate and manufacturing method thereof |
| WO2022036549A1 (en) * | 2020-08-18 | 2022-02-24 | Applied Materials, Inc. | Method of depositing a pre-etch protective layer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001096955A2 (en) * | 2000-06-15 | 2001-12-20 | Applied Materials, Inc. | A method and apparatus for etching metal layers on substrates |
| US20030165751A1 (en) * | 2002-02-27 | 2003-09-04 | Klaus Elian | Lithographic process for reducing the lateral chromium structure loss in photomask production using chemically amplified resists |
| US20050008945A1 (en) * | 2003-03-21 | 2005-01-13 | Brooks Cynthia B. | Multi-step process for etching photomasks |
| CN1601387A (en) * | 2003-09-28 | 2005-03-30 | 中芯国际集成电路制造(上海)有限公司 | Self-aligning method for outskirt state phase shifting light shade |
-
2006
- 2006-04-14 CN CN200610074817.9A patent/CN101054673B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001096955A2 (en) * | 2000-06-15 | 2001-12-20 | Applied Materials, Inc. | A method and apparatus for etching metal layers on substrates |
| US20030165751A1 (en) * | 2002-02-27 | 2003-09-04 | Klaus Elian | Lithographic process for reducing the lateral chromium structure loss in photomask production using chemically amplified resists |
| US20050008945A1 (en) * | 2003-03-21 | 2005-01-13 | Brooks Cynthia B. | Multi-step process for etching photomasks |
| CN1601387A (en) * | 2003-09-28 | 2005-03-30 | 中芯国际集成电路制造(上海)有限公司 | Self-aligning method for outskirt state phase shifting light shade |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101989035B (en) * | 2009-08-03 | 2012-02-08 | 中芯国际集成电路制造(上海)有限公司 | Method for removing chromium metal film from photographic mask |
| CN102797011A (en) * | 2011-05-26 | 2012-11-28 | 南亚科技股份有限公司 | Method and system for performing pulse-etching in semiconductor device |
| CN103901715A (en) * | 2012-12-24 | 2014-07-02 | 中芯国际集成电路制造(上海)有限公司 | Mask plate and manufacturing method thereof |
| WO2022036549A1 (en) * | 2020-08-18 | 2022-02-24 | Applied Materials, Inc. | Method of depositing a pre-etch protective layer |
| US11915940B2 (en) | 2020-08-18 | 2024-02-27 | Applied Materials, Inc. | Method of depositing a pre-etch protective layer |
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