CN101051523B - Semiconductor memory device with temperature sensing device and the operation - Google Patents
Semiconductor memory device with temperature sensing device and the operation Download PDFInfo
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- CN101051523B CN101051523B CN2007100863595A CN200710086359A CN101051523B CN 101051523 B CN101051523 B CN 101051523B CN 2007100863595 A CN2007100863595 A CN 2007100863595A CN 200710086359 A CN200710086359 A CN 200710086359A CN 101051523 B CN101051523 B CN 101051523B
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40626—Temperature related aspects of refresh operations
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4072—Circuits for initialization, powering up or down, clearing memory or presetting
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
Abstract
A semiconductor memory device includes a thermosensor that senses present temperatures of the device and confirms whether the temperature values are valid. The thermosensor includes a temperature sensing unit, a storage unit and an initializing unit. The temperature sensing unit senses temperatures in response to a driving signal. The storage unit stores output signals of the temperature sensing unit and outputs temperature values. The initializing unit initializes the storage unit after a predetermined time from an activation of the driving signal. A driving method includes driving the thermosensor in response to the driving signal, requesting a re-driving after a predetermined time from the activation of the driving signal, and re-driving the thermosensor in response to the driving signal input again.
Description
Technical field
The present invention is about a kind of semiconductor storage; And more particularly, about having the semiconductor storage of temperature-sensing device.
Background technology
Semiconductor storage possesses a plurality of unit that are used to store data substantially, and wherein each unit comprises that one is used to switch the capacitor that transistor and with transmission charge is used for stored charge (that is, data).Term ' data storage ' mean in unit cell electric charge accumulates in the situation in the capacitor.Therefore, in principle might be under the situation of no any electric power consumption with data storage in unit cell.
PN junction and capacitor generation leakage current from MOS transistor are unfavorable.Along with advancing of time, the amount of the initial charge of being stored reduces and data can disappear.Therefore, in order to prevent loss of data, after reading the operation that is stored in the data in the unit, need come the unit is recharged with initial charge according to the data that read.
Preserve data in the unit cell that is stored in storer by periodically repeating to recharge operation.Recharge operation and be commonly called refresh operation.Refresh operation is controlled by dynamic RAM (DRAM) controller.For refresh operation, DRAM is consumption of electric power periodically.Because need low electric power consumption, be critical problem so in battery-operated system, how to reduce electric power consumption such as the mobile device that comprises notebook computer, PDA or cellular phone.
The device that need be used for the information of the temperature of sensing DRAM accurately and output institute sensing.As one of in the method that during refresh operation, reduces electric power consumption, carry out the cycle that changes refresh operation according to temperature usually.When temperature reduces, can refresh under the situation of operation in nothing and in DRAM, preserve data more of a specified duration.At first, judge a plurality of temperature ranges.Then, in temperature range, set the low frequency refresh pulse that is used to control refresh operation.Refresh clock is illustrated in the signal that enables in the refresh operation.Therefore, because refresh operation is at low temperatures carrying out than small frequency, so electric power consumption reduces.
Along with the integrated level or the operating speed increase of semiconductor storage, hotter semiconductor storage takes place.Heat increases the internal temperature of semiconductor storage, and influences normal running.Therefore, need be used for the temperature in the sensing DRAM accurately and the device of output institute sensitive information, that is, hot end instrument.
Fig. 1 is the calcspar of the traditional hot sensor in semiconductor storage.This hot end instrument comprises a temperature sensing unit 10, multi-usage register (MPR) unit 20 and an output driver 30.In response to drive signal ODTS_EN, temperature sensing unit 10 sensing temperatures.The output signal TM_VAL[0:N of storing temperature sensing cell 10] the value MPR[0:N that stored in response to an output enabling signal RD_ODTS output of MPR unit 20].Output driver 30 output temperature signal ODTS_DT[0:N].
Fig. 2 is the schematic circuit diagram of the MPR unit 20 described among Fig. 1.MPR unit 20 comprises and being used for output signal TM_VAL[0:N] be stored in a plurality of latch units of bit cell.These a plurality of latch units have identical substantially structure.A latch units is described.
First latch units comprises a latch 22 and a transmission gate TG1.Latch 22 latch output signal TM_VAL[0:N].Transmission gate TG1 is in response to the output data of output enabling signal RD_ODTS transmission latch 22.
Fig. 3 is the sequential chart that is used to describe the operation of hot end instrument shown in Figure 1.The Current Temperatures of the value of signal TEMP (that is, T, T+1 or the like) expression semiconductor storage inside.
During schedule time behind the input timing of [N] individual drive signal, input and output enabling signal RD_ODTS.The value MPR[N that MPR unit 20 is stored in response to output enabling signal RD_ODTS output].The temperature signal ODTS_DT[N of output driver 30 output expression T degree].
Though the hot end instrument output valve is the Current Temperatures of T degree, the temperature of semiconductor storage changes to (T+2) degree from the T degree.In fact hot end instrument can not represent the Current Temperatures of semiconductor storage.
According to the standard of electronic installation engineering joint committee (JEDEC), when the temperature of device is spent less than 85 ℃, need carry out refresh operation with the cycle of 64ms.When the temperature of device is spent greater than 85 ℃, need carry out refresh operation with the cycle of 32ms.
[N] individual temperature value is stored as when 83 ℃ of degree and Current Temperatures increase are feasible spends above 85 ℃ the temperature signal ODTS_DT[N of 83 ℃ of degree of hot end instrument output expression in MPR unit 20].Cycle with 64ms is carried out refresh operation.Yet in fact Current Temperatures surpasses 85 ℃ of degree, and need carry out refresh operation with the cycle of 32ms.Because unsuitable refresh operation, data can be lost.
Before input drive signal subsequently, hot end instrument keeps being stored in the temperature value in the MP R unit.The traditional hot sensor can not accurately be represented the temperature change of semiconductor storage.
Summary of the invention
According to the Current Temperatures of the hot end instrument sensing apparatus of semiconductor storage of the present invention and confirm whether temperature value is effective.
The embodiment one of according to the present invention, hot end instrument comprises: temperature sensing unit is used in response to the drive signal sensing temperature; Storage unit is used for the output signal and the output temperature value of storing temperature sensing cell; And initialization unit, be used for initialization storage unit after schedule time that the startup at self-driven signal begins.
Another embodiment according to the present invention, one driving method of semiconductor storage comprises that the driving hot end instrument is in response to drive signal, request drives once more after the schedule time that the startup of self-driven signal begins, and drives hot end instrument once more to import in response to drive signal once more.
Description of drawings
Fig. 1 is the calcspar of the traditional hot sensor in the semiconductor storage.
Fig. 2 is the schematic circuit diagram of the described MPR of Fig. 1 unit.
Fig. 3 is the signal timing diagram of the described hot end instrument of Fig. 1.
Fig. 4 is the calcspar according to the hot end instrument of semiconductor storage of the present invention.
Fig. 5 is the calcspar of the described temperature sensing unit of Fig. 4.
Fig. 6 is the schematic circuit diagram of the described initialization unit of Fig. 4.
Fig. 7 is the signal timing diagram of the described initialization unit of Fig. 6.
Fig. 8 is the schematic circuit diagram of the described MPR of Fig. 4 unit.
Fig. 9 is the signal timing diagram of the described hot end instrument of Fig. 4.
Embodiment
Begin to export the request signal that drives for once more according to the hot end instrument of semiconductor storage of the present invention in sequential through after the schedule time from its driving.Hot end instrument is at the fixed time by driving the temperature of sensing semiconductor storage once more.Semiconductor storage is stably carried out the operation relevant with temperature, such as refresh operation.Improve the reliability of semiconductor storage thus.
Hereinafter, will describe in detail according to semiconductor storage of the present invention referring to accompanying drawing.
Fig. 4 is the calcspar according to the hot end instrument in the semiconductor storage of the present invention.Hot end instrument comprises temperature sensing unit 100, possesses the storage unit and the initialization unit 400 of MPR unit 200 and output driver 300.
In response to drive signal ODTS_EN temperature sensing unit 100 sensing temperatures.In response to output enabling signal RD_ODTS, the output signal TM_VAL[0:N of storing temperature sensing cell 100] the value MPR[0:N that stored of MPR unit 200 outputs].The value MPR[0:N that stores in response to initializing signal RST MPR unit 200 initialization].Output driver 300 drive MPR unit 200 as temperature signal ODTS_DT[0:N] output MPR[0:N].The schedule time after the startup of drive signal ODTS_EN, initialization unit 400 initialization MPR unit 200.
Therefore, the schedule time after the startup of drive signal ODTS_EN, the temperature value that initialization is stored.By through initialized temperature value, notify chipset with Current Temperatures without reflection, thereby new drive signal takes place.That is hot end instrument can ask chipset by the initialization temperature value new drive signal to take place.
Fig. 5 is the calcspar of the described temperature sensing unit 100 of Fig. 4.Temperature sensing unit 100 comprises that temperature-sensitive sticker 120, voltage provide device 140 and converter unit 160.Temperature-sensitive sticker 120 is in response to drive signal ODTS_EN sensing temperature.Voltage provides device 140 that upper voltage limit VU_LMT and lower voltage limit VL_LMT are provided.In response to drive signal ODTS_EN, converter unit 160 is converted to digital signal TM_VAL[0:N based on upper voltage limit VU_LMT and lower voltage limit VL_LMT with simulating signal Vtmp].Converter unit 160 possesses trace simulation to digital quantizer (ADC), and it bitwise follows the tracks of simulation output Vtmp of temperature-sensitive sticker 120, and should simulate and export Vtmp and be converted to digital signal TM_VAL[0:N].
In operation, temperature-sensitive sticker 120 is in response to the startup sensing Current Temperatures of drive signal ODTS_EN.Converter unit 160 is converted to digital signal TM_VAL[0:N based on upper voltage limit VU_LMT and lower voltage limit VL_LMT with the output of temperature-sensitive sticker 120 (that is, simulating signal Vtmp)].
Fig. 6 is the schematic circuit diagram of the initialization unit 400 of Fig. 4.Initialization unit 400 comprises latch 420, periodic signal generator 440, counter 460, signal generator 480 and phase inverter I1.Latch 420 starts output signal A and cancels output signal A in response to reset signal E in response to drive signal ODTS_EN.Periodic signal generator 440 is generating period signal B between the starting period of output signal A.The number of times of counter 460 count enable periodic signal B.Signal generator 480 is in response to the output initialization for causing signal RST and the reset signal E of counter 460.The first phase inverter I1 makes reset signal E anti-phase and transmit it to counter 460.
Latch 420 possesses phase inverter I2 and two NAND door ND1 and ND2.The second phase inverter I2 makes drive signal ODTS_EN anti-phase.Receive a NAND door ND1 and the 2nd NAND door ND2 cross-couplings that receives reset signal E of the output of the second phase inverter I2.
The a plurality of signal C[0:N of counter 460 outputs of the number of starts of count cycle signal B].Counter 460 is in response to the reset signal E initializing signal C[0:N that is postponed by the first phase inverter I1].
Fig. 7 is the signal timing diagram of the described initialization unit 400 of Fig. 6.When drive signal ODTS_EN was activated, latch 420 started output signal A.Periodic signal generator 440 has the periodic signal B of preset frequency between the starting period of output signal A.The counter 460 output signal C[0:N of the number of starts of count cycle signal B].In signal generator 480, as all signal C[0:N] when being activated, the 4th NAND door ND4 cancel message D.Make the 3rd anti-phase phase inverter I3 of signal D start initializing signal RST.After the time delay of cancelling beginning second chain of inverters 482 of signal D, start reset signal E.Responsive is cancelled output signal A in reset signal E.The operation of periodic signal generator 440 stops.Simultaneously, in response to through anti-phase reset signal initializes counter 460.
Starting [N] individual signal C[N] time, starting initializing signal RST, this can change according to the maximum count number of setting in the counter 460.Therefore, control starting of self-driven signal ODTS_EN by the cycle of definite periodic signal B and the maximum count number of counter 460 to the cycle of the startup of initializing signal RST.
Fig. 8 is the schematic circuit diagram of the described MPR of Fig. 4 unit 200.MPR unit 200 comprises the output signal TM_VAL[0:N that is used for temperature sensing unit 100] be stored in a plurality of latch units 210 to 250 of cell bit.These a plurality of latch units 210 to 250 have identical substantially structure respectively.In this article, for example, a latch units is described.
Fig. 9 is the signal timing diagram of the hot end instrument of Fig. 4.Temperature sensing unit 100 is in response to [N] individual drive signal ODTS_EN[N] sensing value is the Current Temperatures of T degree.MPR unit 200 is stored as [N] individual temperature value with the output signal of temperature sensing unit 100.
After the startup of self-driven signal ODTS_EN began the schedule time, initialization unit 400 started initializing signal RST.Initializing signal RST initialization MPR unit 200.Therefore, based on institute's sensed temperature, the effective period of data is for the new temperature value of 200 storages begins till initializing signal RST is activated from the MPR unit.
Import this output enabling signal RD_ODTS thereafter.300 outputs of MPR unit 200 and output driver are through initialized value (that is, for new request of operating signal), as temperature signal ODTS_DT.Drive signal ODTS_EN takes place in chipset once more that do not receive temperature value and receive request signal.Drive hot end instrument once more, and the new temperature value of MPR unit 200 storages.When this output enabling signal of input RD_ODTS, sensing and output Current Temperatures.
Hot end instrument according to semiconductor storage of the present invention comprises the initialization unit that is used for initialization MPR unit.The schedule time after the sequential of its driving, hot end instrument initialization temperature value.Hot end instrument output is through initialized value, as for the request signal that drives once more to represent that temperature value is not sensed in the given time.
Therefore, use is stably carried out the built-in function relevant with temperature variation by the semiconductor storage of the accurate temperature value of hot end instrument sensing, such as refreshing or the like.As a result, improve the reliability of semiconductor storage.
Though the output value of being stored in MPR unit is in response to the output enabling signal in the above-described embodiments, output driver also can start in response to the value that output enabling signal and output are stored.In the above-described embodiments, initialization unit starts initializing signal in response to drive signal.In addition, can change initialization unit according to other embodiments of the invention.Can start initializing signal based on the beginning or the end of hot end instrument operation.
Though describe the present invention with respect to specific embodiment, those skilled in the art will be easy to understand, and under situation about not breaking away from as defined spirit of the present invention and category in the claim of application, can carry out various changes and modification.
Claims (14)
1. hot end instrument that is used for semiconductor storage, it comprises:
Temperature sensing unit is used for coming sensing temperature in response to drive signal;
Storage element is used to store the output and the output temperature value of this temperature sensing unit; With
Initialization unit is used to receive this drive signal, and the timing number of this clock signal is counted in the predetermined time period clocking timing after the startup of this drive signal, and when this timing number reaches preset number this storage element of initialization.
2. hot end instrument as claimed in claim 1, wherein this initialization unit comprises:
Latch is used for setting its output signal and in response to its output signal of reseting signal reset in response to this drive signal;
Periodic signal generator was used for producing periodic signal between the starting period of this output signal of this latch;
Counter is used to count the number by the periodic signal of this periodic signal generator generation;
Initialization signal generator is used for producing initializing signal and reset signal in response to the output of this counter; With
First phase inverter is used to make this reset signal anti-phase and will export this counter through anti-phase reset signal to.
3. hot end instrument as claimed in claim 2, wherein this latch comprises:
Second phase inverter is used to make this drive signal anti-phase; And
The first and second NAND doors, output and this reset signal of its cross-couplings to receive this second phase inverter respectively.
4. hot end instrument as claimed in claim 3, wherein this periodic signal generator comprises:
The 3rd NAND door is used to receive this output signal and this periodic signal of this latch; With
First chain of inverters is used to postpone the output of the 3rd NAND door and exports this periodic signal.
5. hot end instrument as claimed in claim 4, wherein this initialization signal generator comprises:
The 4th NAND door is used to receive the output of this counter;
The 3rd phase inverter is used to make the output of the 4th NAND door anti-phase and export this initializing signal;
The 4th phase inverter is used to make this output of the 4th NAND door anti-phase;
Second chain of inverters is used to postpone this output of the 4th NAND door; With
The 5th NAND door is used to receive the output of the 4th phase inverter and this second chain of inverters and export this reset signal.
6. hot end instrument as claimed in claim 5, wherein the number of this this periodic signal of rolling counters forward is exported count signal, and in response to this count signal of initialization by this reset signal of this first inverter delay.
7. hot end instrument as claimed in claim 6, wherein this storage element comprises:
Register is used to store this output of this temperature sensing unit, in response to the stored value of output enabling signal output, and in response to this initializing signal of this initialization unit this stored value of initialization; With
Output driver is used to drive the output of this register as this temperature value.
8. hot end instrument as claimed in claim 7, wherein this register comprises a plurality of latch units that are used for this output of this temperature sensing unit is stored in cell bit.
9. hot end instrument as claimed in claim 8, wherein this latch units comprises:
Latch is used to latch this output of this temperature sensing unit, and resets in response to this initializing signal; And
Transmission gate is used for transmitting in response to this output enabling signal the output of this latch.
10. hot end instrument as claimed in claim 9, wherein this temperature sensing unit comprises:
Temperature-sensitive sticker is used in response to this this temperature of drive signal sensing;
Voltage provides device, is used to provide upper voltage limit and lower voltage limit; And
Converter unit is used in response to this drive signal, based on this upper voltage limit and this lower voltage limit the simulation output of this temperature-sensitive sticker is converted to digital signal.
11. hot end instrument as claimed in claim 10, wherein this converter unit comprises the tracking ADC that is used for bitwise following the tracks of this output of this temperature-sensitive sticker and this output is converted to this digital signal.
12. a driving has the method for the semiconductor storage of hot end instrument, it comprises:
In response to the drive signal sensing temperature;
Storage is through the sensed temperature value;
Export this through the sensed temperature value in response to the output enabling signal;
Predetermined time period clocking timing after the startup of this drive signal, and count the timing number of this clock signal; And
When this timing number reached preset number, initialization should be through the sensed temperature value.
13. a semiconductor storage, it comprises:
Hot end instrument is used to receive drive signal, sensing temperature, and storage temperature value; With
Initialization unit is used to receive this drive signal, and the timing number of this clock signal is counted in the predetermined time period clocking timing after the startup of this drive signal, and when this timing number reaches preset number this hot end instrument of initialization.
14. as the semiconductor storage of claim 13, wherein this hot end instrument comprises:
Temperature sensing unit is used in response to this this temperature of drive signal sensing; With
Storage element is used to store the output and the output temperature value of this temperature sensing unit.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR30289/06 | 2006-04-03 | ||
| KR20060030289 | 2006-04-03 | ||
| KR1020060049134A KR100719181B1 (en) | 2006-04-03 | 2006-05-31 | Semiconductor memory device with temperature sensing device and there for operation |
| KR49134/06 | 2006-05-31 |
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| CN101051523A CN101051523A (en) | 2007-10-10 |
| CN101051523B true CN101051523B (en) | 2010-05-26 |
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| KR (1) | KR100719181B1 (en) |
| CN (1) | CN101051523B (en) |
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| KR100942947B1 (en) * | 2007-06-29 | 2010-02-22 | 주식회사 하이닉스반도체 | Semiconductor memory device |
| US7742349B2 (en) | 2007-06-29 | 2010-06-22 | Hynix Semiconductor, Inc. | Semiconductor memory device |
| CN103026623B (en) * | 2010-07-27 | 2016-06-22 | 飞思卡尔半导体公司 | Latch circuit, flip-flop circuit and frequency divider |
| KR101570913B1 (en) * | 2013-12-19 | 2015-11-23 | 한국과학기술원 | Temperature sensor, and gas sensing system including the same |
| KR20200099794A (en) * | 2019-02-15 | 2020-08-25 | 에스케이하이닉스 주식회사 | Semiconductor memory device |
| KR20220023609A (en) | 2020-08-21 | 2022-03-02 | 에스케이하이닉스 주식회사 | Memory device and operating method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1567211A (en) * | 2003-06-23 | 2005-01-19 | 华邦电子股份有限公司 | Method and apparatus for detecting and adjusting refresh time of Dynamic Random Access Memory (DRAM) using temperature |
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| KR100655076B1 (en) * | 2005-01-20 | 2006-12-08 | 삼성전자주식회사 | Method for outputting internal temperature data in semiconductor memory device and internal temperature data circuit therefor |
| KR100652422B1 (en) | 2005-08-10 | 2006-12-01 | 삼성전자주식회사 | On-chip thermometer, temperature detection method and refresh control method using the same |
| KR100666178B1 (en) | 2005-11-16 | 2007-01-09 | 삼성전자주식회사 | Digtal temperature detecting circuit in semiconductor memory device |
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| CN1567211A (en) * | 2003-06-23 | 2005-01-19 | 华邦电子股份有限公司 | Method and apparatus for detecting and adjusting refresh time of Dynamic Random Access Memory (DRAM) using temperature |
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| TWI332212B (en) | 2010-10-21 |
| CN101051523A (en) | 2007-10-10 |
| KR100719181B1 (en) | 2007-05-18 |
| TW200739579A (en) | 2007-10-16 |
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