CN101044616A - Method of grinding multilayer body and method of manufacturing solid state image pickup device - Google Patents
Method of grinding multilayer body and method of manufacturing solid state image pickup device Download PDFInfo
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- CN101044616A CN101044616A CN 200580032270 CN200580032270A CN101044616A CN 101044616 A CN101044616 A CN 101044616A CN 200580032270 CN200580032270 CN 200580032270 CN 200580032270 A CN200580032270 A CN 200580032270A CN 101044616 A CN101044616 A CN 101044616A
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Abstract
The present invention provides a method of grinding a multilayer body which can prevent a substrate from being damaged by a broken piece of a planar substance, which occurs during grinding and cutting in grinding and cutting the planar substance of the multilayer substance constructed by the substrate and the planar substance which are joined with an extremely narrow gap portion therebetween is provided. A protection layer of the substrate is formed in the gap portion in advance and the substrate can be prevented from being damaged by the broken piece of the planar substance occurring by grinding, in grinding and cutting the planar substance by cutting into the gap portion with a grindstone, of the multilayer body in which the substrate and the planar substance are joined to have the gap portion therebetween.
Description
Technical field
The present invention relates to a kind of method and a kind of method of making solid-state imaging device of grinding multilayer body, particularly, relate to a kind of method and a kind of method of making solid-state imaging device that is used for grinding multilayer body, this method is used to grind the polylayer forest that hollow-core construction is arranged with cutter, and is divided into the independent solid-state imaging device etc. of the solid-state imaging device etc. of many chip size packages (CSP) type for preparing together with wafer level.
Background technology
The solid-state imaging device that be used for digital camera and portable phone, is made of CCD and CMOS is requiring miniaturization day by day.Therefore, recently, the transfer of conventional large scale encapsulation to chip size packages (CSP) type taking place, in described conventional large scale encapsulation, all the solid-state image pickup chips all are sealed in the packing material such as pottery airtightly, and the size of described chip size package type is substantially equal to the size of solid-state image pickup chip.
In these cases, someone provides the solid-state imaging device with following structure: only the optical receiving region of solid-state image pickup chip is settled containment member (transparency glass plate), described containment member constitute by transparent material and on its lower surface edge part integral body be formed with frame part (dividing plate), and the outside at described frame part (dividing plate), the electrode that arrangement is used for connecting up from the outside (pad) (for example, referring to Japanese Patent Application Publication 07-202152).
When the open described solid-state imaging device of 07-202152 of Japanese patent application prepares together with wafer level, at first, go up the many solid-state imaging devices of formation at disk (Semiconductor substrate).Simultaneously, on the containment member that is made of transparent material (transparency glass plate), integral body has formed many frame parts (dividing plate), and described frame part (dividing plate) surrounds the optical receiving region of solid-state image pickup.
Then, containment member (transparency glass plate) is connected on the disk,, thereby prepares the polylayer forest that is formed with many solid-state imaging devices on it with wafer level with each optical receiving region of sealing solid-state image pickup by frame part (dividing plate).Then, this polylayer forest is divided into independent solid-state imaging device, has so just obtained the solid-state imaging device of in Japanese Patent Application Publication 07-202152, describing.
Yet, in above-mentioned Japanese Patent Application Publication 07-202152, be divided into the method for independent solid-state imaging device for the polylayer forest that will be formed with many solid-state imaging devices with wafer level on it, be not described.
In addition, a kind of method that transparency glass plate and disk is separated into many independent solid-state imaging devices is provided, this method is undertaken by following: form dividing plate on transparency glass plate, with corresponding to the position that surrounds the light receiving part of each in the many solid-state image pickups that are formed on the disk (Semiconductor substrate), between adjacent separator, form separate recesses, simultaneously between the adjacent chips on the disk, form separate recesses, transparency glass plate is attached on the disk of partition part, between transparency glass plate and disk, to form gap portion, afterwards, (CMP) polishes transparency glass plate and disk by chemico-mechanical polishing, up to the arrival separate recesses, thereby transparency glass plate and disk are separated into independent solid-state imaging device.Width as for the separate recesses of transparency glass plate, what adopt is to make the gasket surface that forms in the outside of the light receiving part of the solid-state image pickup necessary width that comes out, to connect up etc. (for example, referring to Japanese Patent Application Publication 2004-6834) from the outside.
Yet, in the technology that Japanese Patent Application Publication 2004-6834 describes, the processing step that forms separate recesses at transparency glass plate and disk simultaneously is necessary, in addition, by chemico-mechanical polishing transparency glass plate and disk are polished, reducing thickness, up to arriving separate recesses, thereby the problem that produces is that to be used to separate the time that is spent long.
Summary of the invention
In order to address these problems, what can expect is, for example, use has the plate-like grinding stone (cutting blade) of the necessary width of gasket surface that exposes disk, by using cutter sweep etc., the method that transparency glass plate is ground and cuts is so that the minimum point of grinding stone is through at the gap portion that forms between disk on the pad top and transparency glass plate.
Yet, under the situation of the method for using this grinding stone to grind and cut, for example, when the height that is formed at the gap portion between disk and the transparency glass plate very little, when being about 100 μ m, when as Figure 10 A and A that Figure 10 A is shown to shown in Figure 10 B of A ' cross section and partial enlarged drawing, when the broken thing 12A of the glass that transparency glass plate 12 is produced in the process of grinding and cutting is discharged out, the broken thing 12A of glass is trapped in the space between grinding stone 52 and the disk 11, stirred and be stowed under the situation terrifically, thereby produced the serious problems that disk 11 is sustained damage.
The present invention In view of the foregoing finishes down just, an one purpose provides a kind of grinding for example as the method as the polylayer forest of solid-state imaging device, grinding when having the plane material of the substrate of very narrow slotted section and polylayer forest that the plane material constitutes by being interconnected with one another with cutting, this method can prevent substrate by grind with cutting process in the broken thing damage of the plane material that produced.
In addition, the purpose that the present invention also has provides a kind of method of grinding the solid-state imaging device group, this method grind with cutting by being connected each other and when having the disk of solid-state image pickup of very narrow gap portion and the transparency glass plate in the solid-state imaging device group that transparency glass plate constitutes, can prevent grind with cutting process in the broken thing damage disk of the transparency glass plate that produces; And the method that the described solid-state imaging device of a kind of produced with high productivity is provided.
To achieve these goals; first aspect present invention is a kind of method of grinding multilayer body; the grinding stone that this method is used for polylayer forest by use is cut into gap portion and is used for grinding and the cutting planes material; in described polylayer forest; the plane material is connected by jut or the dividing plate that is formed on the material of plane with substrate; and between above-mentioned substrate and above-mentioned plane material, be provided with gap portion; the method is characterized in that to comprise by in advance protective material being placed on the protective layer that forms above-mentioned substrate in the above-mentioned gap portion, and grind and cut above-mentioned plane material.
According to first aspect; before the plane material is ground and cuts, in gap portion, form the protective layer of substrate in advance, therefore; even under the very narrow situation of gap portion, the broken thing damage that substrate is not produced in the process of grinding and cutting planes material yet.
A second aspect of the present invention is that in first aspect, above-mentioned protective layer wherein forms by fluent material is filled in the above-mentioned gap portion.According to second aspect, be filled with fluent material in the gap portion, therefore,, also can easily form protective layer even under the very narrow situation of gap portion.
A third aspect of the present invention is in second aspect, to be characterised in that above-mentioned fluent material is filled in the above-mentioned gap portion under reduced pressure atmosphere.According to the third aspect, fluent material is filled in the gap portion under reduced pressure atmosphere, therefore, even under the very narrow situation of gap portion, also can easily fill this fluent material.
A fourth aspect of the present invention is, in the second aspect or the third aspect, be characterised in that above-mentioned grinding is carried out before, the above-mentioned fluent material cooling that will fill in above-mentioned gap portion is also solidified.According to fourth aspect, fluent material was cooled off before grinding and solidifies, therefore, it plays a part useful protective layer, and substrate is not damaged by the broken thing that is not produced in the process of grinding and cutting planes material.
A fifth aspect of the present invention is, in fourth aspect, above-mentioned grinding is to be to carry out under the fusing point of above-mentioned fluent material or the lower environment in temperature.According to the 5th aspect, grinding is to be to carry out under the fusing point of above-mentioned fluent material or the lower environment in temperature, and therefore, therefore the fluent material that solidifies advantageously keeps the function as protective layer in the polished curdled appearance that keeps simultaneously.
A sixth aspect of the present invention is, aspect the 5th in, above-mentioned grinding is to be undertaken by above-mentioned polylayer forest is placed on the workbench with refrigerating function.According to the 6th aspect, workbench of placement of multiple layers body has refrigerating function on it, and therefore, grinding can be carried out under fusing point that remains on fluent material or lower temperature environment.
A seventh aspect of the present invention is aspect the 5th or in the 6th aspect, to be characterised in that and to have used the abrasive solution that is mixed with anti-freezing solution in above-mentioned grinding.According to the 7th aspect, anti-freezing solution is mixed in the abrasive solution, therefore, this abrasive solution is not freezed under low temperature environment, thereby can carry out favourable grinding.
A eighth aspect of the present invention is in the second aspect or the third aspect, to be characterised in that above-mentioned grinding is to carry out under the state that above-mentioned polylayer forest is immersed in above-mentioned fluent material.According to eight aspect, grinding is to carry out under the state of polylayer forest being imbedded in the fluent material, and therefore, fluent material does not spill into outside the gap portion in process of lapping, thereby can keep the function as protective layer.
A ninth aspect of the present invention is, in first aspect, be characterised in that above-mentioned plane material is connected on the above-mentioned substrate before, above-mentioned protective material is coated on above-mentioned plane material is formed with on the surface of above-mentioned that side of gap portion.According to the 9th aspect, before being connected to the plane material on the substrate, in advance protective material being coated on the plane material and being formed with on the surface of above-mentioned that side of gap portion, therefore,, also can be easy to form protective layer even under the very narrow situation of gap portion.
In addition, to achieve these goals, prepare the method for solid-state imaging device according to tenth aspect present invention, this method comprises the steps: to form many solid-state image pickups on the surface of disk; On the lower surface of the transparent plate that is connected to above-mentioned disk,, form the frame shape dividing plate of predetermined thickness with the shape of surrounding independent solid-state image pickup corresponding to the position (spot) of above-mentioned solid-state image pickup; Between the aforementioned barriers on the lower surface at above-mentioned transparent plate, form groove with desired depth; Locate above-mentioned disk and above-mentioned transparent plate, and they are linked together by aforementioned barriers; Above-mentioned transparent plate is ground, and separate transparent plate and separate, with corresponding to above-mentioned independent solid-state image pickup; And separate above-mentioned disk branch, with corresponding to independent solid-state image pickup.
According to the tenth aspect, be included in the step that between the aforementioned barriers on the lower surface of transparent plate, forms the groove of desired depth, therefore, when grinding, can utilize the gap between grinding stone and disk surfaces fully with the cutting transparent plate.Therefore, the broken thing that is easy to grind the transparent plate produced emits, thereby broken thing is eased to the damage of disk surfaces.
A eleventh aspect of the present invention is, aspect the tenth in, be characterised in that in the above-mentioned steps of separating above-mentioned transparent plate, utilize the gauge plate-like grinding stone bigger that above-mentioned transparent plate is ground and cuts than the width dimensions of the groove of above-mentioned transparent plate.
According to the tenth one side, grinding is bigger than the width that is pre-formed the groove on transparent plate with the width of the groove of cutting, therefore, forms the supporting part of plate-like grinding stone in transparent plate, like this, and the just feasible big broken thing that is difficult to produce transparent plate.Therefore, alleviated the damage of disk surfaces.
A twelveth aspect of the present invention is; aspect the tenth or in the tenth one side; be characterised in that the above-mentioned steps of separating above-mentioned transparent plate comprises that described gap portion comprises the groove and the space between the aforementioned barriers under the groove of above-mentioned transparent plate by fluent material being filled in the step that forms above-mentioned disk protective layer in the gap portion.
According to the 12 aspect, the protective layer of disk is by forming in the gap portion under the part of grinding that fluent material is filled in transparent plate and cutting, and therefore, the damaged thing that grinds the transparent plate that produces has obtained preventing to the damage of disk surfaces.
As mentioned above; the method of grinding multilayer body according to the present invention; grinding with cutting wherein plane material and substrate and the gap portion that provided in the plane material of polylayer forest stacked together; grind with cutting and in gap portion, carry out after the formation substrate protective layer in advance; therefore; even under the very narrow situation of gap portion, the broken thing damage that described substrate is not produced in the process of grinding and cutting planes material yet.
In addition, the method of solid-state imaging device produced according to the present invention, during the transparency glass plate of the solid-state imaging device group that solid-state image pickup disk combined together and transparency glass plate constitute under to the situation very narrow by the gap portion between them grinds and cuts, by in the part of the grinding of transparency glass plate and cutting, being pre-formed groove to increase the height of gap portion.Therefore, the broken thing of the transparency glass plate that produces in grinding and cutting process is easy to be discharged from, and can prevent disk by these broken things damages, and can obtain large-duty method for preparing solid-state imaging device.
Description of drawings
Figure 1A to 1D is the key-drawing of the packaging technology of expression solid-state imaging device, and this solid-state imaging device is the application example according to the method for grinding multilayer body of the present invention;
Fig. 2 is the schematic diagram that diaphragm forms processing step, and it explains an embodiment according to the method for grinding multilayer body of the present invention;
Fig. 3 A and 3B are the schematic diagrames of grinding and cutting technique step, and it explains an embodiment according to the method for grinding multilayer body of the present invention;
Fig. 4 is the schematic diagram that diaphragm forms processing step, and it explains another embodiment according to the method for grinding multilayer body of the present invention;
Fig. 5 A to 5E is the schematic diagram that shows packaging technology, and it explains an embodiment of the method for solid-state imaging device produced according to the present invention;
Fig. 6 A to 6C is the schematic diagram of grinding and cutting technique step, and it explains an embodiment of the method for solid-state imaging device produced according to the present invention;
Fig. 7 is the schematic diagram that diaphragm forms technology, and it explains another embodiment of the method for solid-state imaging device produced according to the present invention;
Fig. 8 A and 8B are the schematic diagrames of grinding and cutting action, and it explains another embodiment of the method for solid-state imaging device produced according to the present invention;
Fig. 9 explains the schematic diagram that grinds with cutting under the situation of adding the ultrasonic vibration in the abrasive solution to is arranged; And
Figure 10 A and 10B are the schematic diagrames of the grinding and the cutting of interpretation routine.
Symbol description
11... disk (substrate), 11A... solid-state image pickup, 12... transparency glass plate (plane material; transparent plate), the broken thing (broken thing) of 12A... glass, 12B... groove; 13... dividing plate; 14,14A... gap portion, 15... protective layer; 20... polylayer forest; 21... solid-state imaging device, 52... cutting blade (grinding stone, plate-like grinding stone)
Implement best mode of the present invention
Hereinafter, will be with reference to the accompanying drawings, describe according to the method for grinding multilayer body of the present invention and the preferred embodiment for preparing the method for solid-state imaging device.Notice that the identical components in each accompanying drawing is all used identical reference numerals and letter representation.
At first, will an embodiment of the method for grinding multilayer body be described.In the present embodiment, will the preparation technology's of CSP type solid-state imaging device application example be described.
Before this explanation, the preparation technology's of the CSP type solid-state imaging device that adopts Ginding process of the present invention general introduction is described earlier.Figure 1A to 1D is the key diagram that shows the preparation technology of CSP type solid-state imaging device.Shown in Figure 1B, go up the many solid-state image pickup 11A of formation in Semiconductor substrate (disk) 11 (corresponding to substrate of the present invention).
Adopt common semiconductor element preparation technology to prepare solid-state image pickup 11A, and solid-state image pickup 11A has wherein micro element with the structure of planar array arranged in form, described micro element is made of following elements: photodiode, and it is formed in the light receiving element on the disk 11; Transmit electrode, it is delivered to the outside with driving voltage; Optical screen film, it has opening; Interlayer insulating film; Interior lens, it is formed on the top of interlayer insulating film; Colour filter, the top of lens in it is positioned in by the intermediate layer; And, lenticule, it is placed in by the intermediate layer on the top of colour filter, etc.
Because solid-state image pickup 11A is by above-mentioned structure, therefore, incide light on it from the external world by lenticule and interior lens focus, and be radiated photodiode, thereby effectively the aperture ratio is improved.
In addition, shown in Figure 1B, be formed for two pad 11B being connected up in the outside, 11B in the outside of solid-state image pickup 11A.
Technology shown in Figure 1A to 1D schematically illustrates following technology: transparency glass plate 12 (corresponding to tabular object) is bonded on the disk 11 that is formed with above-mentioned solid-state image pickup 11A on it, with the light receiving part of sealing solid-state image pickup 11A, and then this disk 11 is separated into independent solid-state imaging device 21.
At first, shown in Figure 1A, on transparency glass plate 12, form the dividing plate 13 that constitutes by siloxanes.Adhesive 13A is applied on the transparency glass plate 12 that is bonded with the silicon plate, thereby carries out the formation of dividing plate 13.Then, adopt photolithography and dry etching technology to form dividing plate 13 with necessary shape, last, adhesive 13B is only transferred on dividing plate 13 parts.
Then, will be by being attached on the disk 11 by these dividing plates 13 at the transparency glass plate 12 of having arranged dividing plate 13 on the whole surface as mentioned above.Thereby, shown in Figure 1B, prepared the polylayer forest 20 that wherein is formed with many solid-state imaging devices 21 with wafer level, wherein said solid-state imaging device 21 has such structure: the light receiving part of solid-state image pickup 11A is sealed between the disk 11 and transparency glass plate 12 with gap portion 14.
Then, by with thickness being about 0.6 to 1.2mm grinding stone incision gap portion 14, only the transparency glass plate 12 with polylayer forest 20 grinds and cutting, separating transparency glass plate 12, and makes two pad 11B on disk 11,11B come out (Fig. 1 C).Then, with grinding stone each part between two pad 11B of disk 11 is ground and cutting, polylayer forest 20 is separated into independent solid-state imaging device 21 (Fig. 1 D).
Since usually with monocrystalline silicon piece as disk 11, and it is desirable to, the material of dividing plate 13 be on such as the physical property of thermal coefficient of expansion etc. with disk 11 and transparency glass plate 12 materials similar, therefore, the material of dividing plate 13 is preferably polysilicon.
In the grinding and cutting technique of the transparency glass plate shown in Fig. 1 C 12, because the attenuation of solid-state imaging device 21, the gap of the gap portion 14 between disk 11 and transparency glass plate 12 is about 100 μ m and extremely narrow, therefore, shown in above-mentioned Figure 10 A and 10B, the broken thing 12A of the glass that produces in the grinding of transparency glass plate 12 and cutting technique process is trapped in the gap between grinding stone 52 and the disk 11, and is stirred or draw, thereby has damaged disk 11.Therefore, advantageously Ginding process of the present invention is used in the grinding and cutting technique of transparency glass plate 12.
Fig. 2 and Fig. 3 A, 3B explain schematic diagram of the present invention.Polylayer forest 20 among Fig. 2 and Fig. 3 A, the 3B is actually with wafer level preparation, but in these figure, in order to simplify, a polished part only is shown among the figure.Same situation is applied among following Fig. 4.
In the present invention, the fluent material of protective layer 15 is filled in (comprising gel rubber material) gap portion 14 of polylayer forest 20, described protective layer 15 protection disks 11.For this purpose, polylayer forest 20 is immersed in the pallet 81A of the fluent material that is filled with protective layer 15, and pallet 81A is maintained at through in the vacuum pump vacuum chamber 81 of the 82 decompression scheduled times.Thereby the air in the gap portion 14 of polylayer forest 20 is discharged from, and the fluent material of protective layer 15 is easy to be filled in the gap portion 14.
Then, shown in Fig. 3 A and 3B, polylayer forest 20 is fixed on the disk workbench 51 of cutter sweep, and the least significant end of the blade of cutting blade (grinding stone) 52 is positioned at the position that it enters gap portion 14 a little, to grind and cutting transparency glass plate 12.At this moment, even produce the broken thing 12A of glass in the grinding of transparency glass plate 12 and cutting process, disk 11 is not damaged yet, and reason is to have protective layer 15 in the gap portion 14.
Fig. 3 A show with the grinding direction vertical with cut direction on sectional view, and Fig. 3 B shows the sectional view along the A of Fig. 3 A to the intercepting of A ' line.
Then, disk 11 parts are fully cut by another thin cutting blade, and are last, spray cleaning fluid with the spin-cleaning device, to remove protective layer 15.Notice that multilayer 20 is to adopt that unshowned cutting blade grinds and cuts on the back of the body surface that sticks to disk 11.Therefore, even polylayer forest 20 is separated into independent solid-state imaging device 21, it can not become fragment yet.
Then; some examples are described; in these examples; when polylayer forest 20 is ground and cuts; since the revolving force of cutting blade 52, the injection of abrasive solution etc., and the infringement of protective layer 15 is suppressed, and protective layer 15 plays a part the protective layer of disk 11 effectively; wherein said polylayer forest 20 is configured, so that the thickness of transparency glass plate 12 size H
1=500 μ m, the thickness H of dividing plate 13
2=100 μ m, from the depth of cut of the cutting blade 52 of the upper surface of transparency glass plate 12 be 530 μ m (that is, the blade of cutting blade 52 bottom and the clearance H between the disk upper surface
3Be 70 μ m).
As the common situation in the following example; the vacuum degree of vacuum chamber 81 is about 5 to 80kPa when the fluent material with protective layer 15 is filled in gap portion 14; and as for cutting blade 52; use the metal bonding blade; described metal bonding blade is by being that the diamond abrasive grain of 8 to 40 μ m and nickel combine and prepares with granularity; and diameter is 100mm, and thickness is 1.0mm.Speed is set at 4,000 to 6,000rpm.The feed speed of disk workbench 51 is set to 0.2 to 1.0mm/sec.
As for cutting blade 52, more active in the spontaneous behavior of abrasive particle by diamond abrasive grain and phenolic resin etc. being bonded together the resin-bonded blade for preparing, and be favourable on cutting performance.Yet resin-bonded blade abrasion is fast, and in order to guarantee depth of cut, needs often to adjust height.Therefore, in an embodiment, use the metal bonding blade.
[embodiment 1]
After fluent material is filled in gap portion 14, polylayer forest 20 is cooled off in refrigerator (about 4 to 8 ℃), and this fluent material is solidified as the pudding form, and forms protective layer 15.
Then, polylayer forest 20 is placed on the cutter sweep, under room temperature environment, transparency glass plate 12 is ground and cutting, and pad 11B and 11B are come out.When use is included in viewing optical system in the cutter sweep, when on monitor screen, observing the polylayer forest 20 after being machined, for due to the broken thing 12A of glass in disk 11 lip-deep cracks, do not find that its size and the degree of depth are enough to the crack of open circuit wiring, and for size is the quantity in 10 μ m or littler crack, find nearly 10 cracks on each chip, such quantity is in admissible scope.
[embodiment 2]
When the polylayer forest 20 on monitor screen, observed after being machined, do not find that its size and the degree of depth are enough to the crack of open circuit wiring, as for lip-deep crack at disk 11, although exist one or two its sizes to surpass the crack of 10 μ m, but size is the quantity in 10 μ m or littler crack is approximately 10 of each chips, and this is within admissible scope.
[embodiment 3]
As the fluent material that will become protective layer 15, use the polymer solution of the silicone oil system of under 10 ℃, freezing, polylayer forest 20 is immersed in the solution, and utilizes vacuum chamber 81 that fluent material is filled in the gap portion 14.Polylayer forest 20 is stored in the refrigerator (about 0 to 6 ℃) with this state, and solution is frozen and solidify, and forms protective layer 15.
Use has the workbench (the table surface temperature is about 0 to 6 ℃) of refrigerating function such as the disk workbench 51 of cooling chuck table as cutter sweep, and polylayer forest 20 is clamped.Be cooled to about 0 to 6 ℃ grinding water by supply, make polylayer forest 20 and periphery thereof be in the fusing point that remains on this liquid or lower state.
When on monitor screen, observing through the polylayer forest 20 after the machining, for the lip-deep crack of disk 11, do not find that size surpasses the crack of 10 μ m, and be 10 μ m or littler crack for size, only be studded with 2 to 3 cracks on each chip, this is favourable.
For the fluent material that is filled, the fluent material that solidifies in room temperature or lower temperature is favourable, and when using the material that solidifies in zubzero temperature such as water, by in grinding water, sneaking into ethylene glycol as non freezing solution, even make zubzero temperature freeze also obtained preventing, and keep liquid.
[embodiment 4]
Different with the foregoing description 1 to 3 is; in the present embodiment; as shown in Figure 4; the fluent material that will become protective layer 15 in advance is coated on transparency glass plate 12 will be become on this part of gap portion 14; afterwards the transparency glass plate 12 that is formed with dividing plate 13 on it is bonded on the disk 11, rather than the fluent material that will form protective layer 15 is filled in the gap portion 14 in the vacuum chamber 81.
For fluent material in this case, use surfactant that constitutes by silicon or the surface protectant that constitutes by silitect, perhaps use photoresist, and adopt full-bodied fluent material.Can use artificial coating, but, preferably use distributor in order to carry out the coating of minute quantity equably.
Afterwards, transparency glass plate 12 is bonded on the disk 11, this forms polylayer forest 20, this polylayer forest 20 is placed on the cutter sweep again, under normal temperature environment transparency glass plate 12 is ground and cuts, and make pad 11B, and 11B comes out.
When on monitor screen, observing through the polylayer forest 20 after the machining, for lip-deep crack at disk 11, do not find that the size and the degree of depth are enough to the crack that wiring is disconnected, and size is that the quantity in 10 μ m or littler crack is 10 or still less on each chip, but this is fully within allowed band.
As mentioned above; method according to grinding multilayer body of the present invention; enter filler in the gap portion 14 and play the function of the protective layer 15 on disk 11 surfaces, therefore, grind with cutting process in the broken thing 12A of glass the minimizing of the damage on the surface of disk 11 is achieved.
In addition, filler be present in the transparency glass plate 12 that will be machined below, thereby when grinding, this filler plays the function as the supporter of transparency glass plate 12 simultaneously.Therefore, the generation of the broken thing 12A of glass itself is inhibited, thereby produces the effect that reduces the damage on disk 11 surfaces.
In the present invention, the material that is filled in the protective layer 15 in the gap portion 14 of polylayer forest 20 is not to be limited to the material that uses in the foregoing description 1 to 4, but can use the various materials with similar physical character.
Though what describe is that wherein transparency glass plate (plane material) 12 is connected to polylayer forest 20 on the disk (substrate) 11 by dividing plate 13, but also apply the present invention to very effectively and the polylayer forest 20 similar polylayer forests 20 that wherein insert dividing plate 13: wherein on transparency glass plate (plane material) 12, form protuberance to replace use dividing plate 13 by etching etc., and by utilizing lug boss that transparency glass plate (plane material) 12 is connected on the disk (substrate) 11, thereby form gap portion 14.
Then, will describe according to an embodiment for preparing the method for solid-state imaging device of the present invention.Fig. 5 A to 5E is the key diagram that shows the preparation technology of CSP type solid-state imaging device.Shown in Fig. 5 C, on Semiconductor substrate (disk) 11, form many solid-state image pickup 11A.
Common semiconductor element preparation technology is used for preparing solid-state image pickup 11A, and solid-state image pickup 11A has the structure of micro element with the planar array arranged in form, wherein said micro element is made of following elements: photodiode, and it is formed in the light receiving element on the disk 11; Transmit electrode, it is delivered to the outside with driving voltage; Optical screen film, it has opening; Interlayer insulating film; Interior lens, it is formed on the top of interlayer insulating film; Colour filter, the top of lens in it is positioned in by the intermediate layer; Lenticule, it is placed on the top of colour filter by the intermediate layer; Deng.
Because solid-state image pickup 11A is by above-mentioned structure, therefore, the light of incident from the outside on it is by lenticule and interior lens focus, and is radiated photodiode, thereby effectively the aperture ratio is improved.
In addition, shown in Fig. 5 C,, be formed for two pad 11B being connected up in the outside, 11B in the outside of solid-state image pickup 11A.
Fig. 5 A schematically illustrates following technology to the technology shown in the 5E: transparency glass plate 12 (corresponding to transparent plate) is bonded on the disk 11 that is formed with above-mentioned solid-state image pickup 11A on it, light receiving part with sealing solid-state image pickup 11A is separated into independent solid-state imaging device 21 with this disk 11 and glass plate 12 then.
At first, shown in Fig. 5 A, form the dividing plate 13 that is made of siloxanes on transparency glass plate 12, described dividing plate 13 all is to surround the frame shape of independent solid-state image pickup 11A and have preset thickness separately separately.Adhesive 13A is applied on the transparency glass plate 12 that is bonded with the silicon plate, thereby carries out the formation of dividing plate 13.Then, adopt photolithography and dry etching technology, form the dividing plate 13 that has necessary shape separately.
Then, shown in Fig. 5 B, form groove 12B between each in each in the dividing plate 13 of said frame shape and the dividing plate 13.Can carry out or be undertaken the formation of groove 12B by grinding by etching.Then, adhesive 13B is transferred on each end surfaces part of dividing plate 13.Note, can before being bonded to the silicon plate on the transparency glass plate 12, carry out the formation of groove 12B.
Then, will face with disk 11 by the transparency glass plate 12 of on whole surface, having arranged dividing plate 13 as mentioned above and place, thereby position with respect to disk 11.By on disk 11 and transparency glass plate 12, providing telltale mark respectively in advance, and overlap onto by telltale mark on the telltale mark of disk 11, locate transparency glass plate 12.
Then, will be bonded on the disk 11 by dividing plate 13 and adhesive 13B with respect to the transparency glass plate 12 of disk 11 location.Therefore, shown in Fig. 5 C, prepare polylayer forest 20, in described polylayer forest 20, be formed with many solid-state imaging devices 21 with wafer level, each all has such structure described solid-state imaging device 21, and this structure has the gap portion 14 between disk 11 and the transparency glass plate 12, and wherein the light receiving part of solid-state imaging device 11A is sealed.
Notice that the space segment of the groove 12B that wherein forms has formed gap portion 14A, the amount of described gap portion 14A ratio gap part 14 high groove 12B between solid-state image pickup 11A.
Then, by used thickness is that about grinding stone of 0.6 to 1.2mm is cut among the gap portion 14A, make the transparency glass plate 12 that has only polylayer forest 20 be subjected to grinding and cutting, separating transparency glass plate 12, and make pad 11B and 11B on disk 11 come out (Fig. 5 D).
Then, use another thin grinding stone, the pad 11B of disk 11 and each part between the pad 11B are ground and cut, and disk 11 is separated into independent picture pick-up device 21 (Fig. 5 E).Notice that polylayer forest 20 is to use the cutting blade that do not illustrate on the back of the body surface that is glued to disk 11 to grind and cut.Therefore, even polylayer forest 20 is separated into independent solid-state imaging device 21, its also constant fragmentating.
Because monocrystalline silicon piece is often used as disk 11, therefore, the material of dividing plate 13 is preferably polysilicon, reason be dividing plate 13 material ideal be on such as the physical property of thermal coefficient of expansion etc. with the material of the materials similar of disk 11 and transparency glass plate 12.
In the grinding and cutting technique of the transparency glass plate shown in Fig. 5 D 12, because solid-state imaging device 21 attenuation, the height of the gap portion 14 between disk 11 and transparency glass plate 12 is about 100 μ m and very narrow, therefore, when in transparency glass plate 12, not forming groove 12B, the glass fragmentation thing 12A that occurs in the process of grinding with cutting transparency glass plate 12 is trapped in the slit between grinding stone 52 and the disk 11, and be agitated or dilatory, thereby the face of damage disk 11, this is such shown in above-mentioned Figure 10 A and Figure 10 B.
In the present invention, be formed with groove 12B on the transparency glass plate 12, and make transparency glass plate 12 and the gap portion 14A between the disk 11 in grinding and cutting part big, therefore, the broken thing 12A of glass is easy to be discharged from, thereby does not damage disk 11.
Then, about the grinding and the cutting of transparency glass plate 12, will its specific embodiment be described with reference to figure 6A to 6C.At first, in advance at thickness l
1Forming width in the transparency glass plate 12 of=500 μ m is 900 μ m and degree of depth l
2The groove 12B of=300 μ m, and with this transparency glass plate 12 by thickness l
3The dividing plate 13 of=100 μ m is bonded on the disk 11, has formed the polylayer forest 20 (Fig. 6 A) for one group of solid-state imaging device 21 of wafer level thus.
Cutting blade 52 is by being that the diamond abrasive grain of 8 to 40 μ m is bonded to the metal bonding blade for preparing on the nickel with granularity, and uses diameter to be 100mm and the thickness metal bonding blade as 1.0mm.Speed is set to 4,000 to 6,000rpm.In addition, the feed speed of disk workbench 51 is set to 0.2 to 1.0mm/sec.
By using its thickness (1,000 μ m) than the big cutting blade 52 of the width that is formed on the groove 12B on the transparency glass plate 12 (900 μ m) to grind and this transparency glass plate 12 of cutting, in transparency glass plate 12, form the acceptance division of cutting blade 52, and this acceptance division accepts to grind resistance, therefore when grinding, produce the big broken thing of transparency glass plate 12 hardly with cutting.
Note, more active in the spontaneous behavior of abrasive particle for cutting blade 52 by diamond abrasive grain and phenolic resin etc. being bonded together the resin-bonded blade for preparing, and be favourable on cutting performance.Yet resin-bonded blade abrasion is fast, and in order to guarantee depth of cut, needs often to adjust height.Therefore, in the present embodiment, use the metal bonding blade.
When use has utilized the monitor screen that is included in the viewing optical system in the cutter sweep to observe polylayer forest 20 after being machined, although for disk 11 lip-deep cracks, the crack that one or two its big or small 10 μ m of surpassing are arranged on each chip, but do not find that its size and the degree of depth are enough to the crack of open circuit wiring, and size is that the quantity in 10 μ m or littler crack is about 20 to 30 on each chip, and this is in admissible scope.
Then, will another embodiment of preparation solid-state imaging device method of the present invention be described with reference to figure 7 and Fig. 8 A and 8B.In the present embodiment, the technology that the surface of the disk in gap portion 14A 11 is formed protective layer joins in the above-mentioned embodiment.Notice that the polylayer forest 20 among Fig. 7 is actually with the wafer level preparation, but in the accompanying drawings, in order to simplify, only shows polished part.
At first, as shown in Figure 7,, in described polylayer forest 20, in transparency glass plate 12, formed groove 12B with protecting the fluent material (material that contains gelation) of the protective layer 15 of disk 11 usefulness to be filled in the gap portion 14A of polylayer forest 20.For this purpose, polylayer forest 20 is placed in the pallet 81A of the fluent material that is filled with protective layer 15, and pallet 81A is maintained at through in the vacuum pump vacuum chamber 81 of the 82 decompression scheduled times.Thereby the air in the gap portion 14A of polylayer forest 20 is discharged from, and the fluent material of protective layer 15 is easy to be filled in the gap portion 14A.
Then, shown in Fig. 8 A and 8B, polylayer forest 20 is fixed on the disk workbench 51 of cutter sweep, and is located the position that enters gap portion 14A in the minimum point of the blade of cutting blade (grinding stone) 52 a little, to grind and cutting transparency glass plate 12.Even produce the broken thing 12A of glass this moment in the grinding of transparency glass plate 12 and cutting process, disk 11 does not damage yet, reason be gap portion 14A the gap greatly and in gap portion 14A, have a protective layer 15.
Fig. 8 A show with the grinding direction vertical with cut direction on the cross section, and Fig. 8 B shows the cross section along the A of Fig. 8 A to the intercepting of A ' line.
Then, use another thin cutting blade that disk 11 parts are cut fully, last, spray cleaning fluid to remove protective layer 15 with the spin-cleaning device.
Then, be described in the specific embodiment that grinds in this another embodiment with cutting transparency glass plate 12.Polylayer forest 20 is immersed in and will becomes in the fluent material of protective layer 15, and use vacuum chamber 81 that this fluent material is filled in gap portion 14A.Employed fluent material is water or oil.The vacuum degree of vacuum chamber 81 is set at about 5 to 80kPa during filling.
Cutting blade 52 is by being that the diamond abrasive grain of 8 to 40 μ m is bonded to the metal bonding blade that forms on the nickel with granularity, and uses diameter to be 100mm and the thickness metal bonding blade as 1.0mm.The speed of this metal bonding blade is set to 4,000 to 6,000rpm.The feed speed of disk workbench 51 is set to 0.2 to 1.0mm/sec.
When machining, the periphery of the disk workbench 51 of cutter sweep is all surrounded by cofferdam (weir), and is filled with water or oil in the cofferdam.With polylayer forest 20 dipping and be fixed therein, and when transparency glass plate 12 being kept flood under room temperature environment,, thereby pad 11B, 11B are come out with its grinding and cutting.
When on monitor screen, observing the polylayer forest 20 that was machined, for on the surface of disk 11 by the crack due to the broken thing 12A of glass, do not find the crack that its size and the degree of depth are enough to the open-circuit line wiring, and size is that the quantity in 10 μ m or littler crack is approximately 10 or still less, this within the range of permission on each chip.
Note, the fluent material that solidifies under room temperature or lower temperature can be filled in the gap portion 14A of polylayer forest 20, and polylayer forest 20 can be stored in the refrigerator in this state, and fluent material can be solidified, to form protective layer 15.Transparency glass plate 12 is ground in this state and cuts.In this case, be reduced to the fusing point of the material that is filled and has solidified or lower, use grinding water by the temperature that makes this grinding water.
For example, during as the fluent material that under room temperature or lower temperature, solidifies, in the gap portion 14A of polylayer forest 20, add solution, afterwards when using at the polymer solution of 10 ℃ of silicone oil systems of freezing, polylayer forest 20 is stored in the refrigerator (about 0 to 6 ℃), so that this freezing solution and solidifying.In this case, use workbench (the table surface temperature is about 0 to 6 ℃), polylayer forest 20 is clamped such as the disk workbench 51 of cooling chuck table as cutter sweep with refrigerating function.
In addition, be cooled to about 0 to 6 ℃ grinding water, make polylayer forest 20 and periphery thereof be maintained at the fusing point of this solution or lower temperature, and in this state transparency glass plate 12 is ground and cuts by supply.
Note, when using the fluent material under subzero temperature, be solidified such as water as the fluent material that will be filled, by in grinding water, mixing ethylene glycol,, and keep liquid even make and freeze under subzero temperature, also to be prevented as anti-icing fluid.
In addition, as the fluent material that will become protective layer 15, adopt such material as the fluent material that will become protective layer 15, this material is the solution that contains gel, agar etc., and,, it also is difficult to fluidisation under room temperature environment even turning back in case cool off at low temperatures and solidify; And after this fluent material is inserted gap portion 14A, polylayer forest 20 is cooled off in refrigerator (about 4 to 8 ℃), make fluent material be frozen into the pudding form thus, and can form protective layer 15.
In a word; except groove 12B causes the fact that the height of gap portion 14A increases; also fluent material is inserted and formed protective layer 15 in the gap portion 14A; therefore; even when grinding, produce the broken thing 12A of glass with cutting transparency glass plate 12; the broken thing 12A of this glass also is easy to discharge, thereby has suppressed the damage to disk 11.
In addition, as shown in Figure 9, when grinding with cutting transparency glass plate 12, when grinding and cutting, abrasive solution by abrasive solution nozzle 55 supplies the having increased ultrasonic vibration that has ultrasonic vibrator, transfer of vibration is given glass broken thing 12A itself thus, thereby the broken thing 12A of glass is successfully discharged.Therefore, further alleviated the damage of the broken thing 12A of glass to the surface of disk 11.
As an embodiment in this case, for example, use the model of Megasonic Systems Ltd. preparation: MSG-331 etc. as oscillator, and the frequency of oscillation of oscillator 56 is preferably about 1.5 to 3.0MHz, and ultrasonic power is preferably about 10 to 40W.
In addition, moment before discharging from the abrasive solution nozzle, therefore ultrasonic energy is added in the abrasive solution, most effectively, suitable is that the ultrasonator that will have the abrasive solution nozzle 55 of ultrasonator is combined in the part of as close as possible nozzle tip.
Industrial applicability
As mentioned above, according to the method for preparing solid-state imaging device of the present invention, grind with cutting by Utilize solid-state image pickup disk that the very narrow gap portion of about 100 μ m links together and thoroughly During the transparency glass plate of the solid-state imaging device group that bright glass plate consists of, by in advance at transparency glass plate Upper formation groove so that the height of the gap portion in the zone of grinding and cutting increases, therefore, is grinding The broken thing of the transparency glass plate that produces in mill and the cutting process can be prevented the damage of disk End, thereby can access the method for preparing solid-state imaging device that yield is improved.
Claims (12)
1. the method for a grinding multilayer body, the grinding stone that described method is used for polylayer forest by use is cut into that gap portion grinds and the cutting planes material, in described many bodies layer, described plane material and substrate link together by lug boss or the dividing plate that is formed on the material of described plane, and be provided with gap portion between described substrate and described plane material, described method comprises the steps:
By in advance protective material being placed on the protective layer that forms described substrate in the described gap portion, and grind and cut described plane material.
2. according to the method for the grinding multilayer body of claim 1, wherein said protective layer forms by fluent material is filled in the described gap portion.
3. according to the method for the grinding multilayer body of claim 2, wherein described fluent material is filled in described gap portion under reduced pressure atmosphere.
4. according to the method for the grinding multilayer body of claim 2 or claim 3, wherein before described grinding, will be filled in the described fluent material cooling of described gap portion and solidify.
5. according to the method for the grinding multilayer body of claim 4, wherein said grinding is to be to carry out under the fusing point of described fluent material or the lower environment in temperature.
6. according to the method for the grinding multilayer body of claim 5, wherein said grinding is to be undertaken by described polylayer forest is placed on the workbench with refrigerating function.
7. according to the method for the grinding multilayer body of claim 5 or claim 6, wherein in described grinding, use the abrasive solution that is mixed with anti-freezing solution.
8. according to the method for the grinding multilayer body of claim 2 or claim 3, wherein said grinding is to carry out under described polylayer forest is submerged in state in the described fluent material.
9. according to the method for the grinding multilayer body of claim 1, wherein before being connected to described plane material on the described substrate, described protective material is applied at described plane material is formed with on the surface of described this side of gap portion.
10. method for preparing solid-state imaging device, described method comprises the steps:
On disk surfaces, form many solid-state image pickups;
On the lower surface of the transparent plate that is connected to above-mentioned disk,, form the frame shape dividing plate of predetermined thickness with the shape of surrounding independent solid-state image pickup corresponding to the position of above-mentioned solid-state image pickup;
Between the described dividing plate on the lower surface at described transparent plate, form groove with desired depth;
Described disk and described transparent plate are located, and they are linked together by described dividing plate;
Described transparent plate is ground, and separate described transparent plate, with corresponding to described independent solid-state image pickup; And
Separate described disk, with corresponding to described independent solid-state image pickup.
11., wherein in the described step of separating described transparent plate, utilize the gauge plate-like grinding stone bigger to grind and cut described transparent plate than the width dimensions of the groove of described transparent plate according to the method for preparing solid-state imaging device of claim 10.
12. the method for preparing solid-state imaging device according to claim 10 or claim 11; the described step of wherein separating described transparent plate comprises the steps: that wherein said gap portion comprises the space between the groove of described transparent plate and the described dividing plate below groove by fluent material being filled in the step that gap portion forms the protective layer of described disk.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP285100/2004 | 2004-09-29 | ||
| JP2004285101A JP2006100587A (en) | 2004-09-29 | 2004-09-29 | Method of manufacturing solid-state imaging device |
| JP285101/2004 | 2004-09-29 |
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| CN101044616A true CN101044616A (en) | 2007-09-26 |
| CN100490128C CN100490128C (en) | 2009-05-20 |
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| CNB200580032270XA Expired - Fee Related CN100490128C (en) | 2004-09-29 | 2005-09-27 | Method of grinding multilayer body and method of manufacturing solid state image pickup device |
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| CN (1) | CN100490128C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102456802A (en) * | 2010-10-19 | 2012-05-16 | 展晶科技(深圳)有限公司 | Manufacturing method of packaging structures of light emitting diodes |
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| JP5080804B2 (en) * | 2006-12-28 | 2012-11-21 | 富士フイルム株式会社 | Method for manufacturing solid-state imaging device |
| US8456560B2 (en) * | 2007-01-26 | 2013-06-04 | Digitaloptics Corporation | Wafer level camera module and method of manufacture |
| JP4667480B2 (en) * | 2008-03-07 | 2011-04-13 | Ｏｋｉセミコンダクタ株式会社 | The camera module |
| JP5091066B2 (en) * | 2008-09-11 | 2012-12-05 | 富士フイルム株式会社 | Method for manufacturing solid-state imaging device |
| US9419032B2 (en) | 2009-08-14 | 2016-08-16 | Nanchang O-Film Optoelectronics Technology Ltd | Wafer level camera module with molded housing and method of manufacturing |
| JP5252007B2 (en) | 2011-03-08 | 2013-07-31 | 株式会社村田製作所 | Manufacturing method of electronic parts |
| JP2016184068A (en) * | 2015-03-26 | 2016-10-20 | セイコーエプソン株式会社 | Electro-optic device, method for manufacturing electro-optic device, and electronic apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4846910B2 (en) * | 2001-02-06 | 2011-12-28 | オリンパス株式会社 | Solid-state imaging device |
| JP4241160B2 (en) * | 2002-04-22 | 2009-03-18 | 富士フイルム株式会社 | Method for manufacturing solid-state imaging device |
| JP4407800B2 (en) * | 2002-11-27 | 2010-02-03 | セイコーエプソン株式会社 | Manufacturing method of semiconductor device |
| JP5034201B2 (en) * | 2004-09-28 | 2012-09-26 | 大日本印刷株式会社 | Manufacturing method of sensor chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102456802A (en) * | 2010-10-19 | 2012-05-16 | 展晶科技(深圳)有限公司 | Manufacturing method of packaging structures of light emitting diodes |
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| JP2006100587A (en) | 2006-04-13 |
| CN100490128C (en) | 2009-05-20 |
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