CN101043121A - Method of fabricating nitride-based semiconductor light-emitting device and nitride-based semiconductor light-emitting device - Google Patents

Method of fabricating nitride-based semiconductor light-emitting device and nitride-based semiconductor light-emitting device Download PDF

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Publication number
CN101043121A
CN101043121A CNA2006101543585A CN200610154358A CN101043121A CN 101043121 A CN101043121 A CN 101043121A CN A2006101543585 A CNA2006101543585 A CN A2006101543585A CN 200610154358 A CN200610154358 A CN 200610154358A CN 101043121 A CN101043121 A CN 101043121A
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nitride
based semiconductor
layer
slot part
semiconductor substrate
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狩野隆司
畑雅幸
野村康彦
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Abstract

A method of fabricating a nitride-based semiconductor light-emitting device capable of suppressing reduction of characteristics and a yield is obtained. This method of fabricating a nitride-based semiconductor light-emitting device comprises steps of forming a groove portion on a nitride-based semiconductor substrate by selectively removing a prescribed region of a second region of the nitride-based semiconductor substrate other than a first region corresponding to a light-emitting portion of a nitride-based semiconductor layer up to a prescribed depth and forming the nitride-based semiconductor layer having a different composition from the nitride-based semiconductor substrate on the first region and the groove portion of the nitride-based semiconductor substrate.

Description

Nitride-based semiconductor optical device and manufacture method thereof
Technical field
The present invention relates to the manufacture method and the nitride-based semiconductor optical device of nitride-based semiconductor optical device, particularly relate to the manufacture method and the nitride-based semiconductor optical device of the nitride-based semiconductor optical device that on the nitride-based semiconductor substrate, is formed with the nitride-based semiconductor layer.
Background technology
Up to now, known have on the GaN substrate as the nitride-based semiconductor substrate, is formed with the nitride-based semiconductor optical device of the nitride-based semiconductor laser device etc. of nitride-based semiconductor layer.For example open and disclose such nitride-based semiconductor optical device on the 2000-58972 communique the spy.
Open above-mentioned spy and to disclose on the 2000-58972 communique on the n type GaN substrate with flat surfaces, the nitride-based semiconductor laser device that forms by growing n-type nitride-based semiconductor layer, luminescent layer and p type nitride-based semiconductor layer successively.Open on the 2000-58972 communique in the disclosed existing nitride-based semiconductor laser device above-mentioned spy, as the n type coating layer of the n type nitride-based semiconductor layer that on n type GaN substrate, forms, have the n type AlGaN layer and the GaN layer stacked 100 layers structure mutually that undope.
Open on the 2000-58972 communique in the disclosed existing nitride-based semiconductor laser device above-mentioned spy, when on having the n type GaN substrate of flat surfaces, making the n type AlGaN layer growth that constitutes n type coating layer, have the rough sledding of the amount increase of the crackle that in n type AlGaN layer, produces.Specifically shown in figure 32, have on the n type GaN substrate 201 of flat surfaces, make under the situation of n type AlGaN layer 202 growth, reason owing to the lattice constant difference between n type GaN substrate 201 and the n type AlGaN layer 202, when n type AlGaN layer 202 produces distortion, be difficult to this distortion is alleviated.Therefore, have under the situation that makes 202 growth of n type AlGaN layer on the n type GaN substrate 201 of flat surfaces, the amount of the crackle 203 that produces on n type AlGaN layer 202 as shown in figure 33,, extend along [11-20] direction (with reference to Figure 34) and with [1-210] direction and [2110] (with reference to Figure 34) direction of the equivalence of [11-20] direction will increase.In addition, the θ among Figure 34 is 120 °.
And open in the 2000-58972 communique above-mentioned spy, under the situation that the crackle generation on the n type AlGaN layer (n type nitride-based semiconductor layer) increases, the rough sledding of a large amount of crackles also can appear producing in the luminescent layer and the p type nitride-based semiconductor layer that form successively on n type nitride-based semiconductor layer.Therefore, open in the 2000-58972 communique above-mentioned spy, because on nitride-based semiconductor device layer, produce a large amount of crackles with n type nitride-based semiconductor layer, luminescent layer and p type nitride-based semiconductor layer, not only can increase the leakage current that can't offer the luminous component of nitride-based semiconductor device layer because of crackle, but also have the rough sledding that produces the obstruction fiber waveguide because of crackle.Its result opens in the 2000-58972 communique above-mentioned spy, has the problem that nitride-based semiconductor laser device characteristic and rate of finished products reduce.
Summary of the invention
The present invention makes in order to solve above-mentioned problem, and one of purpose of the present invention provides a kind of can suppression characteristic the reduction and the manufacture method of the nitride-based semiconductor optical device of rate of finished products reduction.
Another object of the present invention provides a kind of can suppression characteristic the reduction and the nitride-based semiconductor optical device of rate of finished products reduction.
In order to achieve the above object, the manufacture method of the nitride-based semiconductor optical device of first aspect of the present invention comprises: the regulation zone of the second area beyond the first area of the nitride-based semiconductor substrate by will be corresponding with the luminous component of the nitride-based semiconductor layer that forms on the nitride-based semiconductor substrate is removed to the degree of depth of regulation selectively, forms the operation of slot part at the nitride-based semiconductor substrate; With on the first area and slot part of nitride-based semiconductor substrate, form the operation have with the nitride-based semiconductor layer of the different compositions of described nitride-based semiconductor substrate.
As mentioned above, in the manufacture method of the nitride-based semiconductor optical device aspect first of the present invention, by will be corresponding to the regulation zone of the second area beyond the first area of the nitride-based semiconductor substrate of luminous component, be removed to the degree of depth of regulation selectively, and on the nitride-based semiconductor substrate, form slot part, the lateral vertical of slot part under the situation of nitride-based semiconductor substrate surface and the A/F of slot part from the bottom surface of slot part under the situation that openend reduces gradually, use metal-organic chemical vapor deposition equipment (MOCVD) method etc., when on the nitride-based semiconductor substrate, forming the nitride-based semiconductor layer, because the constituent material of nitride-based semiconductor layer is difficult to pile up on the side of slot part, so can make the thickness of the nitride-based semiconductor layer that on the side of slot part, forms, less than the thickness of the nitride-based semiconductor layer that on the first area, forms.In this case, even because the former thereby generation distortion on the nitride-based semiconductor layer of lattice constant difference between nitride-based semiconductor substrate and the nitride-based semiconductor layer, because this distortion concentrates on the little part of the nitride-based semiconductor layer thickness that is positioned on the slot part side, so the distortion that produces on the nitride-based semiconductor layer of first area is reduced.
In addition, the nitride-based semiconductor substrate is the GaN substrate, the nitride-based semiconductor layer is the AlGaN layer, and the A/F of slot part from the bottom surface of slot part under the situation that openend increases gradually, can make the Al ratio of components of the nitride-based semiconductor layer that on the slot part side, forms, less than the Al ratio of components of the nitride-based semiconductor layer that on the first area, forms.Its reason can be thought owing to use mocvd method etc., when on the nitride-based semiconductor substrate, forming the nitride-based semiconductor layer, the Ga of the part of the constituent material of nitride-based semiconductor layer compares with Al, and easy mobile growing surface, Ga are easily to the side of groove one side shifting.Therefore, lattice constant in the low part of the Al ratio of components that is positioned at the nitride-based semiconductor layer (AlGaN layer) on the side of slot part, approaching with the lattice constant of nitride-based semiconductor substrate (GaN substrate), so the low part of nitride-based semiconductor layer Al ratio of components being arranged on the side of slot part can make the lattice constant difference between nitride-based semiconductor substrate and the nitride-based semiconductor layer diminish.In this case, even because the former thereby generation distortion on the nitride-based semiconductor layer of lattice constant difference between nitride-based semiconductor substrate and the nitride-based semiconductor layer, this distortion also can be eased in the low part of Al ratio of components that is arranged in the nitride-based semiconductor layer on the side of slot part, so the distortion that produces on the nitride-based semiconductor layer of first area is diminished.
In first aspect, because the distortion that produces on the nitride-based semiconductor layer is diminished, the distortion that can suppress to produce because of the nitride-based semiconductor layer occurs in the rough sledding of the amount increase of the crackle that produces on the nitride-based semiconductor layer greatly like this.Therefore, the leakage current that can suppress can't to offer because of crackle nitride-based semiconductor layer luminous component increases, and the rough sledding of the obstruction fiber waveguide that produces because of crackle.Its result can suppress the reduction of nitride-based semiconductor optical device characteristic and rate of finished products.
In the above-described configuration, preferably the nitride-based semiconductor substrate comprises the GaN substrate, and the nitride-based semiconductor layer comprises the layer that contains Al, Ga and N.As the formation adopting, in the nitride-based semiconductor optical device of nitride-based semiconductor layer with the AlGaN layer (layer that contains Al, Ga and N) that comprises the GaN substrate and on the GaN substrate, form, it is poor easily to suppress the lattice constant that results between GaN substrate and the AlGaN layer, occurs in the rough sledding that the amount of the crackle that produces on the nitride-based semiconductor layer increases.
Comprise the GaN substrate at above-mentioned nitride-based semiconductor substrate, and the nitride-based semiconductor layer comprises in the formation of the layer that contains Al, Ga and N, preferably on the nitride-based semiconductor substrate, form in the operation of nitride-based semiconductor layer, first area top that is included in the nitride-based semiconductor substrate gone up, form the operation of nitride-based semiconductor layer on the bottom surface of slot part and the side, the Al ratio of components of the nitride-based semiconductor layer that forms on the side of slot part is lower than the Al ratio of components of the nitride-based semiconductor layer that forms on the first area.As the formation adopting, because lattice constant in the low part of the Al ratio of components that is positioned at the nitride-based semiconductor layer (AlGaN layer) on the side of slot part, approaching with the lattice constant of nitride-based semiconductor substrate (GaN substrate), so the low part of nitride-based semiconductor layer Al ratio of components being arranged on the side of slot part can make the lattice constant difference between nitride-based semiconductor substrate and the nitride-based semiconductor layer diminish.Like this, even because of the lattice constant difference between nitride-based semiconductor substrate and the nitride-based semiconductor layer produces distortion on the nitride-based semiconductor layer, this distortion can be eased in the low part of Al ratio of components that is arranged in the nitride-based semiconductor layer on the side of slot part.
In this case, preferably on the nitride-based semiconductor substrate, form in the operation of slot part, comprise the mode that enlarges gradually to openend with bottom surface, form the operation of the A/F of slot part from slot part.As formation adopting, use mocvd method etc., when on the nitride-based semiconductor substrate, forming the nitride-based semiconductor layer, think because the Ga of the part of the constituent material of nitride-based semiconductor layer compares with Al, easy mobile growing surface, Ga so can easily make the nitride-based semiconductor layer Al ratio of components that forms on the side of slot part, is lower than the Al ratio of components of the nitride-based semiconductor layer that forms easily to the side of groove one side shifting on the first area.
In the above-described configuration, preferably on the nitride-based semiconductor substrate, form in the operation of slot part, first area top that is included in the nitride-based semiconductor substrate gone up, form the operation of nitride-based semiconductor layer on the bottom surface of slot part and the side, and the thickness of the nitride-based semiconductor layer that forms on the side of slot part is littler than the thickness of the nitride-based semiconductor layer that forms on the first area.As the formation adopting, even because of the lattice constant difference between nitride-based semiconductor substrate and the nitride-based semiconductor layer produces distortion on the nitride-based semiconductor layer, because this distortion concentrates on the little part of nitride-based semiconductor layer thickness on the side that is positioned at slot part, so can alleviate distortion easily at the nitride-based semiconductor layer of first area.
The thickness of the nitride-based semiconductor layer that on the side of above-mentioned slot part, forms, under the situation that the thickness of the nitride-based semiconductor layer of formation is little on comparing on the first area, on the nitride-based semiconductor substrate, form in the operation of slot part, also can comprise to form the operation of the side of slot part in fact perpendicular to the mode of nitride-based semiconductor substrate surface.As the formation adopting, using mocvd method etc., when on the nitride-based semiconductor substrate, forming the nitride-based semiconductor layer, the constituent material of nitride-based semiconductor layer is difficult to pile up on the side of slot part, so can easily make the thickness of the nitride-based semiconductor layer that on the side of slot part, forms, littler than the thickness of the nitride-based semiconductor layer that on the first area, forms.
The thickness of the nitride-based semiconductor layer that on the side of above-mentioned slot part, forms, under the situation that the thickness of the nitride-based semiconductor layer of formation is little on comparing on the first area, on the nitride-based semiconductor substrate, form in the operation of slot part, also can comprise with from the bottom surface of slot part to the diminishing mode of openend, form the operation of the A/F of slot part.As the formation adopting, using mocvd method etc., when on the nitride-based semiconductor substrate, forming the nitride-based semiconductor layer, compare perpendicular to the situation on the surface of nitride-based semiconductor substrate in fact with the side of slot part, because the constituent material of nitride-based semiconductor layer is difficult to pile up on the side of slot part, so can more easily make the thickness of the nitride-based semiconductor layer that on the side of slot part, forms, littler than the thickness of the nitride-based semiconductor layer that on the first area, forms.
According to above-mentioned formation, on the nitride-based semiconductor substrate, form in the operation of slot part, also can be included on the nitride-based semiconductor substrate and slot part to be formed the longilineal operation of extending in prescribed direction.As the formation adopting, can be suppressed on the direction of intersecting the crackle that produces in the mode of extending, crossing and expand corresponding to the zone of the slot part that extends in prescribed direction with prescribed direction.
In the above-described configuration, preferably the surface of nitride-based semiconductor substrate has (H, K ,-H-K, L) face (H and K are integer, among H and the K to have at least be not 0).Generally be applied with on the nitride-based semiconductor layer under the enterolithic situation of face, when the surface of nitride-based semiconductor substrate is (0001) face, the piezoelectric field maximum that on the nitride-based semiconductor layer, produces, surface by making the nitride-based semiconductor substrate is (H, K ,-H-K, L) face of the face beyond (0001) face, because the piezoelectric field that produces on the luminescent layer that is made of nitride-based semiconductor is diminished, luminous efficiency is improved.
In this case, preferably the surface of nitride-based semiconductor substrate have (H, K ,-H-K, L, 0) face.As the formation adopting, owing on the luminescent layer that constitutes by nitride-based semiconductor, do not produce piezoelectric field, luminous efficiency is improved.
Surface at above-mentioned nitride-based semiconductor substrate has in the formation of (H, K ,-H-K, L) face, and preferably the surface of nitride-based semiconductor substrate has (H, K ,-H-K, L) face (L is not for being 0 integer).As the formation adopting, in the arrangement of atom, owing to can form the step of atomic layer height from the teeth outwards, it is the step flow growth (ス テ Star プ Off ロ Yi Cheng Long) of starting point growth that the mode of crystalline growth becomes easily with the step, its result can make crystal property improve.
Surface according to above-mentioned nitride-based semiconductor substrate has the formation of (H, K ,-H-K, L) face, preferably on the nitride-based semiconductor substrate, form in the operation of slot part, be included in the operation that forms the slot part that extends along [K ,-H, H-K, 0] direction on the nitride-based semiconductor substrate.As the formation adopting, can suppress crackle effectively to the direction expansion that intersects with [0001] direction that is easy to generate crackle.
According to above-mentioned formation, on the nitride-based semiconductor substrate, form in the operation of slot part the operation of the elongated shape slot part of the second direction extension that also can be included in the encirclement first area that forms grid shape on the nitride-based semiconductor substrate, intersects at first direction with first direction.As the formation adopting, at least can be suppressed at and extend the crackle that produces on the direction of intersecting with first direction, crossing and expand corresponding to the zone of the slot part that extends at first direction, and can be suppressed at the crackle that the direction of intersecting with second direction is extended at least, crossing and expand corresponding to the zone of the slot part that extends in second direction.Therefore, because the both direction that can cut off in first direction and second direction extends the crackle that produces, so can more effectively suppress the increase of crackle amount.
In above-mentioned formation, the nitride-based semiconductor layer also can constitute and comprise: by the layer that constitutes with the different nitride-based semiconductors of forming of nitride-based semiconductor substrate that on the first area of nitride-based semiconductor substrate and second area, form, and the luminescent layer that constitutes by the nitride-based semiconductor that on the first area, forms at least.
The nitride-based semiconductor optical device of a second aspect of the present invention comprises: the nitride-based semiconductor substrate, it comprise corresponding to the first area of luminous component and by the stage portion with specified altitude be configured to above-mentioned first area in abutting connection with second area; The nitride-based semiconductor layer, it is formed on the side of top and stage portion of first area of nitride-based semiconductor substrate, and has the composition different with the nitride-based semiconductor substrate.And, the thickness of the nitride-based semiconductor layer that forms on the side of stage portion is littler than the thickness of the nitride-based semiconductor layer that forms on the first area.
In the nitride-based semiconductor optical device of a second aspect of the present invention, as mentioned above, by making the thickness of the nitride-based semiconductor layer that on the side of the stage portion of nitride-based semiconductor substrate, forms, thickness than the nitride-based semiconductor layer that forms on corresponding to the first area of the nitride-based semiconductor substrate of luminous component is little, when using mocvd method etc. on the nitride-based semiconductor substrate, to form the nitride-based semiconductor layer, even because of the lattice constant difference between nitride-based semiconductor substrate and the nitride-based semiconductor layer causes producing distortion on the nitride-based semiconductor layer, because distortion concentrates on the little part of nitride-based semiconductor layer thickness on the side that is positioned at stage portion, so the distortion that produces on the nitride-based semiconductor layer of first area is diminished.Therefore, can suppress the rough sledding that the amount of the crackle that produces that causes greatly owing to the distortion that produces at the nitride-based semiconductor layer increases on the nitride-based semiconductor layer.Therefore, can't offer the increase of leakage current of nitride-based semiconductor layer luminous component because of crackle and the rough sledding of the obstruction fiber waveguide that produces because of crackle can be inhibited.Its result can suppress the reduction of nitride-based semiconductor optical device characteristic and rate of finished products.
In the above-described configuration, preferably the surface of nitride-based semiconductor substrate has (H, K ,-H-K, L) face (H and K are integer, among H and the K to have at least be not 0).Generally be applied with on the nitride-based semiconductor layer under the enterolithic situation of face, when the surface of nitride-based semiconductor substrate is (0001) face, the piezoelectric field maximum that on the nitride-based semiconductor layer, produces, be beyond (0001) face the time on the surface of nitride-based semiconductor substrate, the piezoelectric field that the piezoelectric field that produces on the nitride-based semiconductor layer produces during than (0001) face is little.Surface by making the nitride-based semiconductor substrate because the piezoelectric field that produces on the luminescent layer that is made of nitride-based semiconductor is diminished, can make luminous efficiency improve for (H, K ,-H-K, L) face of the face beyond (0001) face like this.
Surface at above-mentioned nitride-based semiconductor substrate has in the formation of (H, K ,-H-K, L) face, and preferably the surface of nitride-based semiconductor substrate has (H, K ,-H-K, 0) face.As the formation adopting, owing on the luminescent layer that constitutes by nitride-based semiconductor, do not produce piezoelectric field, luminous efficiency is improved.
In this case, preferably to form stage portion along [K ,-H, H-K, 0] direction extension mode.As the formation adopting, can suppress crackle effectively to the direction expansion that intersects with [0001] direction that is easy to generate crackle.
Surface at above-mentioned nitride-based semiconductor substrate has in the formation of (H, K ,-H-K, L) face, and preferably the surface of nitride-based semiconductor substrate has (H, K ,-H-K, L) face (L is not for being 0 integer).As the formation adopting, in the arrangement of atom, owing to can form the step of atomic layer height from the teeth outwards, it is the step flow growth of starting point growth that the mode of crystalline growth becomes easily with the step, its result can make crystal property improve.
In above-mentioned formation, the nitride-based semiconductor layer also can constitute and comprise: by layer that constitutes with the different nitride-based semiconductors of forming of nitride-based semiconductor substrate that form on the first area of nitride-based semiconductor substrate and second area and the luminescent layer that is made of the nitride-based semiconductor that forms on the first area at least.
The nitride-based semiconductor optical device of a third aspect of the present invention comprises: the nitride-based semiconductor substrate, and it comprises corresponding to the first area of luminous component with by having the stage portion of specified altitude, is configured to the second area with above-mentioned first area adjacency; The nitride-based semiconductor layer, it is formed on the side of top and stage portion of first area of nitride-based semiconductor substrate, and has the composition different with the nitride-based semiconductor substrate, contains Al, Ga and N.And, the Al ratio of components of the nitride-based semiconductor layer that on the side of stage portion, forms, the Al ratio of components of the nitride-based semiconductor layer that forms on being lower than on the first area.
In the nitride-based semiconductor optical device of a third aspect of the present invention, as mentioned above, by making the Al that contains that on the side of the stage portion of nitride-based semiconductor substrate, forms, the Al ratio of components of the nitride-based semiconductor layer of Ga and N, be lower than the top Al ratio of components of going up the nitride-based semiconductor layer that forms corresponding to the first area of the nitride-based semiconductor substrate of luminous component, when use mocvd method etc. forms the nitride-based semiconductor layer on the nitride-based semiconductor substrate, the Al that contains owing to the nitride-based semiconductor layer on the side that is positioned at stage portion, the lattice constant of the part that the Al ratio of components of the nitride-based semiconductor layer of Ga and N is low, approach to have and contain Al, the lattice constant of the nitride-based semiconductor substrate of the different composition of nitride-based semiconductor layer of Ga and N, so, the lattice constant difference between nitride-based semiconductor substrate and the nitride-based semiconductor layer is reduced in the low part of Al ratio of components that is arranged in the nitride-based semiconductor layer on the side of stage portion.Therefore, even because of the lattice constant difference between nitride-based semiconductor substrate and the nitride-based semiconductor layer causes producing distortion on the nitride-based semiconductor layer, owing to can alleviate distortion, so also can reduce the distortion that on the nitride-based semiconductor layer, produces in the low part of the Al ratio of components that is arranged in the nitride-based semiconductor layer on the side of stage portion.Therefore, the rough sledding that can suppress to cause the crackle amount that on the nitride-based semiconductor layer, produces to increase because the distortion that produces at the nitride-based semiconductor layer is big.Therefore, can't offer the increase of leakage current of nitride-based semiconductor layer luminous component because of crackle and the rough sledding of the obstruction fiber waveguide that produces because of crackle can be inhibited.Its result can suppress the reduction of nitride-based semiconductor optical device characteristic and rate of finished products.
In the above-described configuration, preferably the surface of nitride-based semiconductor substrate has (H, K ,-H-K, L) face (H and K are integer, among H and the K to have at least be not 0).Generally be applied with on the nitride-based semiconductor layer under the enterolithic situation of face, the piezoelectric field that the piezoelectric field that the piezoelectric field maximum that the surface of nitride-based semiconductor substrate produces on the nitride-based semiconductor layer when (0001) face, the surface of nitride-based semiconductor substrate produced on the nitride-based semiconductor layer for time beyond (0001) face produces during than (0001) face is little.Surface by making the nitride-based semiconductor substrate because the piezoelectric field that produces on the luminescent layer that is made of nitride-based semiconductor is diminished, can make luminous efficiency improve for (H, K ,-H-K, L) face of the face beyond (0001) face like this.
In this case, preferably the surface of nitride-based semiconductor substrate has (H, K ,-H-K, 0) face.As the formation adopting, owing on the luminescent layer that constitutes by nitride-based semiconductor, do not produce piezoelectric field, luminous efficiency is improved.
Surface at above-mentioned nitride-based semiconductor substrate has in the formation of (H, K ,-H-K, L) face, and the surface of nitride-based semiconductor substrate has (H, K ,-H-K, L) face (L is not for being 0 integer).As the formation adopting, in the arrangement of atom, owing to can form the step of atomic layer height from the teeth outwards, it is the step flow growth of starting point growth that the mode of crystalline growth becomes easily with the step, its result can make crystal property improve.
In this case, preferably to form stage portion along [K ,-H, H-K, 0] direction extension mode.As the formation adopting, can suppress crackle effectively to the direction expansion that intersects with [0001] direction that is easy to generate crackle.
In above-mentioned formation, the nitride-based semiconductor layer also can constitute and comprise: the layer that is made of the nitride-based semiconductor that contains Al and Ga that forms on the first area of nitride-based semiconductor substrate and second area; With the luminescent layer that constitutes by the nitride-based semiconductor that on the first area, forms at least.
Description of drawings
Fig. 1 is the plane graph of manufacturing process that is used to illustrate the nitride-based semiconductor laser device of first execution mode of the present invention.
Fig. 2 is the sectional drawing along the 100-100 line of Fig. 1.
Fig. 3 is the plane graph of manufacturing process that is used to illustrate the nitride-based semiconductor laser device of first execution mode of the present invention.
Fig. 4 is the sectional drawing along the 200-200 line of Fig. 3.
Fig. 5 is the plane graph of manufacturing process that is used to illustrate the nitride-based semiconductor laser device of first execution mode of the present invention.
Fig. 6 is the sectional drawing along the 300-300 line of Fig. 5.
Fig. 7 is the sectional drawing of manufacturing process that is used to illustrate the nitride-based semiconductor laser device of first execution mode of the present invention.
Fig. 8 is the sectional drawing of manufacturing process that is used to illustrate the nitride-based semiconductor laser device of first execution mode of the present invention.
Fig. 9 is the sectional drawing of manufacturing process that is used to illustrate the nitride-based semiconductor laser device of first execution mode of the present invention.
Figure 10 is the sectional drawing of manufacturing process that is used to illustrate the nitride-based semiconductor laser device of first execution mode of the present invention.
Figure 11 is the sectional drawing of manufacturing process that is used to illustrate the nitride-based semiconductor laser device of first execution mode of the present invention.
Figure 12 is the sectional drawing of the structure of the nitride-based semiconductor laser device that forms of the manufacturing process of the expression nitride-based semiconductor laser device that uses first execution mode of the present invention.
Figure 13 is the plane graph of manufacturing process that is used to illustrate the nitride-based semiconductor laser device of second execution mode of the present invention.
Figure 14 is the sectional drawing of manufacturing process that is used to illustrate the nitride-based semiconductor laser device of second execution mode of the present invention.
Figure 15 is the sectional drawing of the structure of the nitride-based semiconductor laser device that forms of the manufacturing process of the expression nitride-based semiconductor laser device that uses second execution mode of the present invention.
Figure 16 is the plane graph of manufacturing process that is used to illustrate the nitride-based semiconductor laser device of the 3rd execution mode of the present invention.
Figure 17 is the sectional drawing of manufacturing process that is used to illustrate the nitride-based semiconductor laser device of the 4th execution mode of the present invention.
Figure 18 is the sectional drawing of manufacturing process that is used to illustrate the nitride-based semiconductor laser device of the 4th execution mode of the present invention.
Figure 19 is the sectional drawing of manufacturing process that is used to illustrate the nitride-based semiconductor laser device of the 4th execution mode of the present invention.
Figure 20 is the sectional drawing of the structure of the nitride-based semiconductor laser device that forms of the manufacturing process of the expression nitride-based semiconductor laser device that uses the 4th execution mode of the present invention.
Figure 21 is the sectional drawing of manufacturing process that is used to illustrate the nitride-based semiconductor laser device of the 5th execution mode of the present invention.
Figure 22 is the sectional drawing of manufacturing process that is used to illustrate the nitride-based semiconductor laser device of the 6th execution mode of the present invention.
Figure 23 is the plane graph of manufacturing process that is used to illustrate the nitride-based semiconductor laser device of the 7th execution mode of the present invention.
Figure 24 is the sectional drawing along the 400-400 line of Figure 23.
Figure 25 is the plane graph of manufacturing process that is used to illustrate the nitride-based semiconductor laser device of the 8th execution mode of the present invention.
Figure 26 is the sectional drawing along the 500-500 line of Figure 25.
Figure 27 is the plane graph of manufacturing process that is used to illustrate the nitride-based semiconductor laser device of the 9th execution mode of the present invention.
Figure 28 is the sectional drawing along the 600-600 line of Figure 27.
Figure 29 is the plane graph of manufacturing process that is used to illustrate the nitride-based semiconductor laser device of the tenth execution mode of the present invention.
Figure 30 is the sectional drawing along the 700-700 line of Figure 29.
Figure 31 is the sectional drawing of n type GaN substrate of nitride-based semiconductor laser device of the distortion example of expression first～the tenth execution mode.
Figure 32 is the sectional drawing that is illustrated in the state when making n type AlGaN layer growth on the n type GaN substrate with flat surfaces.
Figure 33 is the plane graph that the crackle on the expression n type AlGaN layer shown in Figure 32 generates state.
Figure 34 is the schematic diagram of crystallization direction of the GaN substrate of expression hexagonal crystal system.
Embodiment
With reference to the accompanying drawings embodiments of the present invention are described below.
(first execution mode)
Below with reference to Fig. 1～Figure 12 and Figure 34, the manufacturing process of the nitride-based semiconductor laser device of first execution mode is described.
In the manufacturing process of the nitride-based semiconductor laser device of first execution mode, as depicted in figs. 1 and 2, at first prepare to have the surface of (0001) face, and have the n type GaN substrate 1 of low-dislocation-density.This n type GaN substrate 1 has the lattice constant of about 0.3189nm (a direction of principal axis).In addition, n type GaN substrate 1 is an example of " nitride-based semiconductor substrate " of the present invention.Deposited by electron beam evaporation sedimentation etc. then, the regulation zone on n type GaN substrate 1 form the mask layer 17 with striated (elongated shape) that the thick Ni layer of about 0.4 μ m constitutes.Specifically, form mask layer 17 in the mode of extending along [1-100] direction.In addition, will set into about 50 μ m, and the width W 2 of [11-20] direction of mask layer 17 will be set into about 200 μ m in abutting connection with the distance W between the mask layer 17 of [11-20] direction 1.
Then as shown in Figure 3 and Figure 4, use Cl 2Reactive ion etching (RIE) method, mask layer 17 as etching mask, is etched into the degree of depth of about 2 μ m above n type GaN substrate 1.In addition, etching selectivity in this case (mask layer 17/n type GaN substrate 1) is 1: 10.In addition, as etching condition, etching pressure: about 3.325kPa, plasma power: about 200W, etching speed: 150nm/ second about 140nm/ second～about.On n type GaN substrate 1, formation has the width W 1 of about 50 μ m and the depth D 1 of about 2 μ m like this, and the slot part 1a of the striated (elongated shape) of edge [1-100] direction extension.In addition, under the situation of above-mentioned etching condition, the lateral vertical of slot part 1a is above n type GaN substrate 1.And in n type GaN substrate 1, have the regional 1b of the width W 2 of [11-20] direction that is clipped in the middle about 200 μ m of slot part 1a, become the corresponding zone of luminous component with the nitride-based semiconductor device layer of narrating later 10.In addition, the regional 1b of n type GaN substrate 1 is an example of " first area " of the present invention, and the zone that is formed with the slot part 1a of n type GaN substrate 1 is an example of " second area " of the present invention.After this remove mask layer 17.
Then as shown in Figure 5 and Figure 6, use mocvd method, on the regional 1b of n type GaN substrate 1 on, on the bottom surface and side of slot part 1a,, form each layer (3～9) of the nitride-based semiconductor that constitutes nitride-based semiconductor device layer 10 successively across resilient coating 2.
Specifically as shown in Figure 6, at first will be formed with the n type GaN substrate 1 of slot part 1a, be inserted in the reacting furnace of hydrogen and nitrogen atmosphere.After this, with the NH of the nitrogen raw material of each layer (2～9) of nitride-based semiconductor 3Gas is provided in the reacting furnace, and substrate temperature is heated to about 1160 ℃.Then, in the time of near substrate temperature has reached about 1160 ℃, by using H as current-carrying gas 2Gas provides trimethyl gallium (TMGa) gas of Ga raw material and trimethyl aluminium (TMAl) gas of Al raw material in reacting furnace, on n type GaN substrate 1, make by having the thick Al that undopes of about 0.8 μ m 0.01Ga 0.99The resilient coating 2 that N constitutes was with about 1.1 μ m/ hours speed growth.After this, by using H as current-carrying gas 2Gas provides TMGa gas, TMAl gas and the GeH of the Ge raw material that is mingled with as the n type in reacting furnace 4(first germane) gas on resilient coating 2, makes by the n type Al with the thick doped with Ge of about 1.8 μ m 0.07Ga 0.93The n type coating layer 3 that N constitutes was with about 1.1 μ m/ hours speed growth.This n type Al 0.07Ga 0.93The lattice constant of the n type coating layer 3 that N constitutes is about 0.3184nm (a direction of principal axis).By this n type Al 0.07Ga 0.93The lattice constant of the n type coating layer 3 that N constitutes is the lattice constant (about 0.3814nm (a direction of principal axis)) according to GaN, the lattice constant (about 0.3112nm (a direction of principal axis)) of AlN, the value of calculating.In addition, n type coating layer 3 is examples of " nitride semiconductor layer " of the present invention.Have again, by using H as current-carrying gas 2Gas provides TMGa gas and TMAl gas in reacting furnace, on n type coating layer 3, make by having the thick plain Al of about 20 μ m 0.2Ga 0.8The n side carrier limiting layer 4 (carrier block layer) that N constitutes was with about 1 μ m/ hour speed growth.
After this substrate temperature is dropped to about 850 ℃ from about 1160 ℃.Then, by using N as current-carrying gas 2Gas provides trimethyl gallium (TMGa) gas of Ga raw material and trimethyl indium (TMIn) gas of In raw material in reacting furnace, on n side carrier limiting layer 4, make by having the thick plain In of about 20nm 0.02Ga 0.98Four barrier layers that N constitutes (not expression among the figure) and by having the thick plain In of about 3.5nm 0.15Ga 0.85Three quantum well layers that N constitutes (not expression among the figure) are alternately grown with about 0.25 μ m/ hour speed.Like this, formation has four barrier layers and three MQW active layers 5 that the alternately laminated multiple quantum trap (multiple quantumwell (MQW)) of quantum well layer constructed.On MQW active layer 5, make subsequently by having the thick plain In of about 0.1 μ m 0.01Ga 0.99N constitutes 6 growths of p sidelight conducting shell.After this, by using N as current-carrying gas 2Gas provides TMGa gas and TMAl gas in reacting furnace, on p sidelight conducting shell 6, make by having the thick Al that undopes of about 20nm 0.2Ga 0.8The p side carrier limiting layer 7 that N constitutes was with about 1.2 μ m/ hours speed growth.
Then substrate temperature is heated to about 1000 ℃ from about 850 ℃.Then, by using N as current-carrying gas 2Gas provides TMGa gas, TMAl gas and the Mg (C of the Mg raw material that is mingled with as the p type in reacting furnace 5H 5) 2(cyclopentadiene closes magnesium) gas on p side carrier limiting layer 7, makes by the p type Al with the thick doped with Mg of about 0.45 μ m 0.07Ga 0.93The p type coating layer 8 that N constitutes was with about 1.1 μ m/ hours speed growth.After this, substrate temperature is dropped to about 850 ℃ from about 1000 ℃.Then, by using N as current-carrying gas 2Gas provides TMGa gas and TMIn gas in reacting furnace, on p type coating layer 8, make by having the thick In that undopes of about 3nm 0.07Ga 0.93The p side contact layer 9 that N constitutes was with about 0.25 μ m/ hour speed growth.Like this, on the regional 1b of n type GaN substrate 1, on the bottom surface and side of slot part 1a,, form nitride-based semiconductor device layer 10 by each layer (3～9) formation of nitride-based semiconductor across resilient coating 2.
At this moment, in the first embodiment, the thickness of each layer (2～9) of the nitride-based semiconductor that forms on the side of the slot part 1a that edge [1-100] direction (with reference to Fig. 5) is extended, the thickness than each layer (2～9) of the nitride-based semiconductor of formation on the regional 1a of n type GaN substrate 1 is little respectively.Therefore, even owing to have the n type GaN substrate 1 of about 0.3189nm lattice constant and by n type Al with about 0.3184nm lattice constant 0.07Ga 0.93Lattice constant difference between the n type coating layer 3 that N constitutes and cause on n type coating layer 3, producing distortion, because this distortion concentrates on the little part of n type coating layer 3 thickness that is positioned on the slot part 1a side, so the distortion that produces on the n type coating layer 3 of the regional 1b that is positioned at n type GaN substrate 1 is eased.So as shown in Figure 5, can be inhibited because of the rough sledding that causes the amount of the crackle 19a～19c of generation on n type coating layer 3 to increase in the big distortion of generation on the n type coating layer 3.Therefore, also can be suppressed at the amount increase of the crackle 19a～19c that produces on the nitride-based semiconductor device layer 10 that comprises n type coating layer 3.
In addition in the first embodiment, extend crackle 19b that produces and the crackle 19c that extends generation along [2110] (with reference to Figure 34) direction owing to extend crackle 19a, edge [1-210] (with reference to Figure 34) direction of generation along [11-20] direction, intersect with zone, so can suppress crackle 19a～19c crossing and expand corresponding to the zone of slot part 1a corresponding to the slot part 1a that extends along [1-100] direction.
After this, the n type GaN substrate 1 that will be formed with nitride-based semiconductor device layer 10 takes out in reacting furnace.
Then as shown in Figure 7, use plasma CVD method, on regulation zone, form by SiO corresponding to the regional 1b of the n type GaN substrate 1 on the p side contact layer 9 2The mask layer 18 of the striated (elongated shape) that film constitutes.Specifically, form mask layer 18 in the mode of extending along [1-100] direction (with reference to Fig. 5).In addition, the width setup of [11-20] direction (with reference to Fig. 5) of mask layer 18 is about 1.5 μ m.
Then as shown in Figure 8, use Cl 2The RIE method, with mask layer 18 as etching mask, from the thickness of the about 0.4 μ m of last facet etch of p side contact layer 9 and p type coating layer 8.The protuberance and the p side contact layer 9 that form thus by p type coating layer 8 constitute, and the protrusion 11 of the striated (elongated shape) of edge [1-100] direction (with reference to Fig. 5) extension.In addition, protrusion 11 is formed width of [11-20] direction (with reference to Fig. 5) with about 1.5 μ m and the projecting height of about 0.402 μ m.This protrusion 11 is a current path, and the below of this protrusion 11 is a luminous component.In addition, the thickness of the par beyond the protuberance of p type coating layer 8 is about 0.05 μ m.After this remove mask layer 18.
Then as shown in Figure 9, use plasma CVD method, on whole, form the SiO of about 0.2 μ m thickness 2Film is then by removing corresponding to this SiO 2The zone of the protrusion 11 of film in the zone corresponding to protrusion 11, forms the current barrier layer 12 (current block layer) with peristome 12a.
Below as shown in figure 10, use electron beam vapor deposition method, on the p side contact layer 9 that constitutes protrusion 11, form p side Ohmic electrode 13.When forming this p side Ohmic electrode 13, from the lower floor to the upper strata, form Pt layer with about 1nm thickness and Pd layer successively with about 10nm thickness.After this, use electron beam vapor deposition method, on current barrier layer 12 with the mode that contacts above the p side Ohmic electrode 13, form p side liner electrode 14 (pad electrode).When forming this p side liner electrode 14, the Au layer that from the lower floor to the upper strata, forms the Ti layer with about 30nm thickness, Pd layer successively and have about 3nm thickness with about 150nm thickness.
Below as shown in figure 11, with the grinding back surface of n type GaN substrate 1 thickness of cleavage easily to the cleavage operation of narrating later.After this, use electron beam vapor deposition method, the regulation zone on the back side of n type GaN substrate 1, the n side liner electrode 16 that forms n side Ohmic electrode 15 successively and constitute by Au layer with about 300nm thickness.In addition, when forming n side Ohmic electrode 15, form Al layer successively from the back side of n type GaN substrate 1 and have the Pd layer of about 10nm thickness with about 6nm thickness.
Last in the tectosome of Figure 11, by along the center of the slot part 1a of n type GaN substrate 1 element being separated in [1-00] direction (with reference to Fig. 5), and in [11-20] direction (with reference to Fig. 5) element is cleaved into each chip, can forms the nitride-based semiconductor laser device of first execution mode as shown in figure 12.
In addition, as shown in figure 12, in the nitride-based semiconductor laser device that the manufacturing process with first execution mode forms, the slot part 1a (with reference to Figure 11) of n type GaN substrate 1 becomes the stage portion 1c that vertical side is arranged by above-mentioned element separation circuit.Just, in the nitride-based semiconductor laser device that the manufacturing process with first execution mode forms, the thickness of each layer (2～9) of the nitride-based semiconductor that forms on the side of the stage portion 1c of n type GaN substrate 1, the thickness than each layer (2～9) of the nitride-based semiconductor that forms on the regional 1b of n type GaN substrate 1 is little respectively.
As mentioned above, in the first embodiment, on the n type GaN substrate 1 when resilient coating 2 forms nitride-based semiconductor device layers 10, by make on the side of slot part 1a, form by n type Al 0.07Ga 0.93The thickness of the n type coating layer 3 that N constitutes, less than the thickness of the n type coating layer 3 that on the regional 1b of n type GaN substrate 1, forms, even the n type GaN substrate 1 with about 0.3189nm lattice constant with have about 0.3184nm lattice constant by n type Al 0.07Ga 0.93Lattice constant difference between the n type coating layer 3 that N constitutes and cause on n type coating layer 3, having produced distortion, because this distortion concentrates on the little part of n type coating layer 3 thickness that is positioned on the slot part 1a side, so the distortion that produces on the n type coating layer 3 of the regional 1b that is positioned at n type GaN substrate 1 can be eased.Like this, can suppress because of cause the rough sledding of the amount increase of the crackle 19a～19c of generation on n type coating layer 3 in the big distortion of generation on the n type coating layer 3.Therefore, owing to can be suppressed at the increase of the amount of the crackle 19a～19c that produces on the nitride-based semiconductor device layer 10 that comprises n type coating layer 3, therefore, can't offer the increase of leakage current of nitride-based semiconductor device layer 10 luminous component and the rough sledding of the obstruction fiber waveguide that produces because of crackle 19a～19c because of crackle 19a～19c.Its result can suppress the reduction of nitride-based semiconductor laser device characteristic and rate of finished products.
In addition in the first embodiment, when on n type GaN substrate 1, forming slot part 1a, form perpendicular to above the n type GaN substrate 1 by the side that makes slot part 1a, on the n type GaN substrate 1 when resilient coating 2 forms n type coating layers 3, because the constituent material (AlGaN) of n type coating layer 3 is difficult to be deposited on the side of slot part 1a, so can easily make the thickness of the n type coating layer 3 that on the side of slot part 1a, forms, less than the thickness of the n type coating layer 3 that on the regional 1b of n type GaN substrate 1, forms.
In addition in the first embodiment, when on n type GaN substrate 1, forming slot part 1a, by slot part 1a is formed in the mode of extending along [1-100] direction, extend crackle 19b that produces and the crackle 19c that extends generation along [2110] direction owing to extend crackle 19a, edge [1-210] direction of generation along [11-20] direction, intersect with zone, so can suppress crackle 19a～19c crossing and expand corresponding to the zone of slot part 1a corresponding to the slot part 1a that extends along [1-100] direction.
(second execution mode)
With reference to Figure 13～Figure 15 and Figure 34, different with above-mentioned first execution mode in this second execution mode, the situation of formation on n type GaN substrate along the slot part of the striated (elongated shape) of [11-20] direction extension described.
In the manufacturing process of the nitride-based semiconductor laser device of this second execution mode, as shown in figure 13, at first use and Fig. 1～identical technology of first execution mode shown in Figure 4, on n type GaN substrate 21, formation has the width W 11 of about 50 μ m and the degree of depth of about 2 μ m, and has the slot part 21a of the striated (elongated shape) of lateral vertical above n type GaN substrate 21.But in this second execution mode, slot part 21a forms in the mode of extending along [11-20] direction.In addition, will be in abutting connection with the distance W 12 between the slot part 21a of [1-100] direction, the distance of setting between the cleavage surface that forms in the cleavage operation than narration in the back (resonator is long) is big.And in n type GaN substrate 21, the regional 21b that is clamped by slot part 21a is the zone corresponding to the luminous component of the nitride-based semiconductor device layer of narrating later 30.In addition, n type GaN substrate 21 is examples of " nitride-based semiconductor substrate " of the present invention.In addition, the regional 21b of n type GaN substrate 21 is examples of " first area " of the present invention, and the zone that is formed with the slot part 21a of n type GaN substrate 21 is an example of " second area " of the present invention.
In addition, the n type GaN substrate 21 of second execution mode is identical with the n type GaN substrate 1 of above-mentioned first execution mode, has the surface of (0001) face, and has low dislocation density.In addition, n type GaN substrate 21 has the lattice constant of about 0.3189nm.
After this, use the technology identical with first execution mode shown in Figure 6, on the regional 21b of n type GaN substrate 21 on, on the bottom surface and side of slot part 21a,, form nitride-based semiconductor device layer 30 across resilient coating 22.At this moment, form resilient coating 22, n type coating layer 23, n side carrier limiting layer 24, MQW active layer 25, p sidelight conducting shell 26, p side carrier limiting layer 27, p type coating layer 28 and p side contact layer 29 successively from n type GaN substrate 21 1 sides.In addition, when forming above-mentioned each layer (22～29), the identical thickness and the composition of each layer (2～9) of formation and the nitride-based semiconductor of above-mentioned first execution mode.Just, on n type GaN substrate 21, the n type coating layer 23 that forms across resilient coating 22 is by n type Al 0.07Ga 0.93N constitutes, and has the lattice constant of about 0.3184nm.In addition, n type coating layer 23 is examples of " nitride-based semiconductor layer " of the present invention.
This moment is in second execution mode, identical with above-mentioned first execution mode, at the thickness along each layer (22～29) of the nitride-based semiconductor that forms on the side of the slot part 21a of [11-20] direction, it is little to go up the thickness of each layer (22～29) of nitride-based semiconductor of formation than the regional 21b of n type GaN substrate 21 respectively.Therefore, concentrate on the little part of n type coating layer 23 thickness that is positioned on the slot part 21a side, diminish so be positioned at the distortion that produces on the n type coating layer 23 on the regional 21b of n type GaN substrate 21 in the distortion that produces on the n type coating layer 23.The amount that therefore can be suppressed at the crackle 39a～39c that produces on the n type coating layer 23 increases, and can suppress also to comprise that the amount of the crackle 39a～39c that produces on the nitride-based semiconductor device layer 30 of n type coating layer 23 increases.
In this external second execution mode, extend the crackle 39b, edge [2110] (with reference to Figure 34) direction that produce along [1-210] (with reference to Figure 34) direction and extend the crackle 39c that produces and intersect, so can suppress crackle 39b and 39c crossing and expand corresponding to the zone of slot part 21a with zone corresponding to the slot part 21a of edge [11-20] direction extension.
Below as shown in figure 14, use and Fig. 7～identical technology of first execution mode shown in Figure 11, form the protrusion 31 that extends along [1-100] direction (with reference to Figure 13), form current barrier layer 32 (with reference to Figure 15), p side Ohmic electrode 33 and p side liner electrode 34 then successively with peristome 32a.In addition, the regulation zone on the back side of n type GaN substrate 21 forms n side Ohmic electrode 15 and n side liner electrode 16 successively.In addition, the sectional drawing of Figure 14 is the sectional drawing along the line of [1-100] direction.In this second execution mode, owing to slot part 21a forms in the mode of extending along [11-20] direction (with reference to Figure 13), so the protrusion 31 that extends along [1-100] direction is vertical with slot part 21a.In addition, protrusion 31 is a current path, and the below of protrusion 31 is a luminous component.In addition, when forming current barrier layer 32, p side Ohmic electrode 33 and p side liner electrode 34, form thickness and the composition identical with the current barrier layer 12 of above-mentioned first execution mode, p side Ohmic electrode 13 and p side liner electrode 14.
After this, in tectosome shown in Figure 14, carry out element in [1-100] direction (with reference to Figure 13) and separate, and element is cleaved into each chip in [11-20] direction (with reference to Figure 13).At this moment, with by the distance between the cleavage surface of the chip of cleavage (the long L of the resonator of Figure 14) than the little mode of the distance W between the slot part 21a 12 (with reference to Figure 13), along [11-20] direction, will be corresponding to the regulation zone of the regional 21b of n type GaN substrate 21 (corresponding to the zone of the dotted line of Figure 14) cleavage.So just formed the nitride-based semiconductor laser device of second execution mode shown in Figure 15.
Have again as shown in figure 15, in the nitride-based semiconductor laser device that the manufacturing process with second execution mode forms, all removed by above-mentioned cleavage operation corresponding to the part of slot part 21a.Therefore, different with the nitride-based semiconductor laser device of above-mentioned first execution mode in the nitride-based semiconductor laser device of second execution mode, on n type GaN substrate 21, there is not stage portion.
As mentioned above, in second execution mode, on n type GaN substrate 21, across resilient coating 22, when forming nitride-based semiconductor device layer 30, by make on the side of slot part 21a, form by n type Al 0.07Ga 0.93The thickness of the n type coating layer 23 that N constitutes, thickness than the n type coating layer 23 that forms on the regional 21b of n type GaN substrate 21 is little, identical with the first above-mentioned execution mode, owing to concentrate on the little part of n type coating layer 23 thickness that is positioned on the slot part 21a side in the distortion that produces on the n type coating layer 23, increase so can suppress to be located at the amount of the crackle 39a～39c that produces on the n type coating layer 23 on the regional 21b of n type GaN substrate 21, and can suppress also to comprise that the amount of the crackle 39a～39c that produces on the nitride-based semiconductor device layer 30 of n type coating layer 23 increases.Its result, identical with above-mentioned first execution mode, increase owing to the leakage current that can suppress to cause because of crackle 39a～39c, and can suppress to produce the rough sledding that counteracts fiber waveguide because of crackle 39a～39c, so can suppress the reduction of nitride-based semiconductor laser device characteristic and rate of finished products.
In this external second execution mode, when on n type GaN substrate 21, forming slot part 21a, by forming slot part 21a in the mode of extending along [11-20] direction, crackle 39b, edge [2110] direction that extend to produce along [1-210] direction extended the crackle 39c that produces and intersected with zone corresponding to the slot part 21a of edge [11-20] direction extension, so can suppress crackle 39b and 39c crossing and expand corresponding to the zone of slot part 21a.
(the 3rd execution mode)
With reference to Figure 16 and Figure 34, in the 3rd execution mode, different with above-mentioned first and second execution modes, the situation of the slot part of the striated (elongated shape) that the both direction that forms cancellate edge [1-100] direction and [11-20] direction on n type GaN substrate is extended describes.
In the manufacturing process of the nitride-based semiconductor laser device of this 3rd execution mode, as shown in figure 16, at first use and Fig. 1～identical technology of first execution mode shown in Figure 4, on n type GaN substrate 41, formation has the width W 21 of about 50 μ m and the degree of depth of about 2 μ m, and has the slot part 41a and the 41b of the striated (elongated shape) of lateral vertical above n type GaN substrate 41.But, in this 3rd execution mode, form in the mode of extending by making slot part 41a, and slot part 41b is formed in the mode of extending along [11-20] direction along [1-100] direction, slot part 41a and 41b are configured to clathrate.In addition, will and the contiguous slot part 41a of [11-20] direction between distance W 22 set into about 200 μ m.In addition, will and the contiguous slot part 41b of [1-100] direction between distance W 23 set for bigger than the distance (resonator is long) between the cleavage surface that forms in the cleavage operation in the back.Then, in n type GaN substrate 41, slot part 41a and 41b area surrounded 41c are the zone corresponding to the luminous component of the below of the protrusion that is arranged in the nitride-based semiconductor device layer of narrating later 40 (figure do not have expression).In addition, the regional 41c of n type GaN substrate 41 is examples of nitride-based semiconductor substrate of the present invention.In addition, the regional 41c of n type GaN substrate 41 is examples of " first area " of the present invention, and being formed with the slot part 41a of n type GaN substrate 41 and the zone of 41b is an example of " second area " of the present invention.
In addition, the n type GaN substrate 41 of the 3rd execution mode is identical with the n type GaN substrate 1 of above-mentioned first execution mode, has the surface of (0001) face, and has low dislocation density.In addition, n type GaN substrate 41 has the lattice constant of about 0.3189nm.
After this, use the technology identical with first execution mode shown in Figure 6, on on the regional 41c of n type GaN substrate 41, on slot part 41a and the 41b bottom surface and side separately,, form nitride-based semiconductor device layer 40 across resilient coating (not expression among the figure).In addition, when forming nitride-based semiconductor device layer 40, form nitride-based semiconductor device layer 10 identical construction that have with above-mentioned first execution mode.Just, with the nitride-based semiconductor device layer 40 that the manufacturing process of the 3rd execution mode forms, be included in the n type coating layer (not expression among the figure) that forms across resilient coating on the n type GaN substrate 41.In addition, constitute the n type coating layer of nitride-based semiconductor device layer 40, by n type Al 0.07Ga 0.93N constitutes, and has the lattice constant of about 0.3184nm.
This moment is in the 3rd execution mode, identical with above-mentioned first execution mode, the thickness of each layer of the nitride-based semiconductor that forms on each side of slot part 41a that extends along [1-100] direction and the slot part 41b that extends along [11-20] direction, the thickness of each layer of the nitride-based semiconductor that forms than the regional 41c at n type GaN substrate 41 is little.Therefore, the distortion that on the n type coating layer that constitutes nitride-based semiconductor device layer 40, produces, concentrate on the little part of the thickness that is positioned at the n type coating layer on slot part 41a and the 41b side separately, diminish so be positioned at the distortion that produces on the n type coating layer on the regional 41c of n type GaN substrate 41.The amount that therefore can be suppressed at the crackle 49a～49c that produces on the n type coating layer increases, and can suppress also to comprise that the amount of the crackle 49a～49c that produces on the nitride-based semiconductor device layer 40 of n type coating layer increases.
In addition, in the 3rd execution mode, intersect with zone because the crackle 49a, edge [1-210] (with reference to Figure 34) direction that extend to produce along [11-20] direction are extended the crackle 49b that produces and extend the crackle 49c that produces along [2110] (with reference to Figure 34) direction, so can suppress crackle 49a～49c crossing and expand corresponding to the zone of slot part 41a corresponding to the slot part 41a of edge [1-100] direction extension.In addition, the crackle 49c that the crackle 49b that extend to produce along [1-210] direction and extend along [2110] direction produces with intersect corresponding to zone along the slot part 41b of [11-20] direction extension, so can suppress crackle 49b and 49c crossing and expand corresponding to the zone of slot part 41b.
After this manufacturing process of the 3rd execution mode is identical with above-mentioned first execution mode.Just, on the nitride-based semiconductor device layer 40 of the 3rd execution mode, form vertical with the slot part 41b that extends along [11-20] direction, and the protrusion (not representing among the figure) that extends in [1-100] direction identical with the bearing of trend of slot part 41a.
As mentioned above, in the 3rd execution mode, on n type GaN substrate 41, when resilient coating forms nitride-based semiconductor device layer 40, by make on slot part 41a and 41b side separately, form by n type Al 0.07Ga 0.93The thickness of the n type coating layer that N constitutes, thickness than the n type coating layer that forms on the regional 41c of n type GaN substrate 41 is little, identical with above-mentioned first execution mode, owing to concentrate on the little part of n type coating thickness that is located on slot part 41a and the 41b side separately in the distortion that produces on the n type coating layer, the amount that therefore can be suppressed at the crackle 49a～49c that produces on the n type coating layer on the regional 41c that is positioned at n type GaN substrate 41 increases, and can suppress also to comprise that the amount of the crackle 49a～49c that produces on the nitride-based semiconductor device layer 40 of n type coating layer increases.Its result is identical with above-mentioned first execution mode, can suppress the increase of the leakage current that causes because of crackle 49a～49c, and suppresses the rough sledding of the obstruction fiber waveguide that produces because of crackle 49a～49c.Its result can suppress the reduction of nitride-based semiconductor laser device characteristic and rate of finished products.
In this external the 3rd execution mode, on n type GaN substrate 41, slot part 41a and 41b by the striated (elongated shape) that will extend on the both direction of [1-100] direction and [11-20] direction form clathrate, crackle 49a, edge [1-210] direction that extend to produce along [11-20] direction extended the crackle 49b that produces and extended the crackle 49c that produces along [2110] direction and intersect with zone corresponding to the slot part 41a of edge [1-100] direction extension, so can suppress crackle 49a～49c crossing and expand corresponding to the zone of slot part 41a.In addition, the crackle 49c that the crackle 49b that extend to produce along [1-210] direction and extend along [2110] direction produces with intersect corresponding to zone along the slot part 41b of [11-20] direction extension, so can suppress crackle 49b and 49c crossing and expand corresponding to the zone of slot part 41b.
In addition, the effect of other of the 3rd execution mode is identical with above-mentioned first execution mode.
(the 4th execution mode)
In the 4th execution mode, different with above-mentioned first～the 3rd execution mode, with reference to Figure 17～Figure 20 and Figure 34, to the A/F of the slot part that will on n type GaN substrate, form, from the bottom surface of slot part to openend gradually condition of enlarged describe.
In the manufacturing process of the nitride-based semiconductor laser device of the 4th execution mode, as shown in figure 17, at first prepare to have the surface of (0001) face, and have the n type GaN substrate 51 of low-dislocation-density.This n type GaN substrate 51 has the lattice constant of about 0.3189nm.In addition, n type GaN substrate 51 is examples of " nitride-based semiconductor substrate " of the present invention.Then, use plasma CVD method, on the regulation zone on the n type GaN substrate 51, form by SiO with about 0.5 μ m thickness 2The mask layer 65 of the striated (elongated shape) that film constitutes.Specifically, form mask layer 65 in the mode of extending along [1-100] direction.In addition, the distance W between the mask layer 65 of adjacency 31 is set into about 50 μ m, and the width W 32 of mask layer 65 is set into about 200 μ m.
Then as shown in figure 18, use Cl 2Reactive ion etching (RIE) method, mask layer 65 as etching mask, is etched into the degree of depth of about 2 μ m above n type GaN substrate 51.In addition, etching selectivity in this case (mask layer 65/n type GaN substrate 51) is 1: 10.In addition, as etching condition, etching pressure: about 3.325kPa, plasma power: about 200W, etching speed: 150nm/ second about 140nm/ second～about.On n type GaN substrate 51, formation has width (width of the openend) W31 of about 50 μ m and the depth D 31 of about 2 μ m like this, and the slot part 51a of the striated (elongated shape) of edge [1-100] direction extension.In addition, will be by SiO 2The mask layer 65 that film constitutes is as etching mask, and under the above-mentioned etching condition n type GaN substrate 51 carried out under the etched situation, and the section configuration of slot part 51a becomes mesa.Just, the A/F of slot part 51a enlarges to openend gradually for the bottom surface from slot part 51a.Specifically, the bottom surface of slot part 51a and side angulation α are about 40 °.So in n type GaN substrate 51, the regional 51b of the width W with about 200 μ m 32 of being clamped by slot part 51a becomes the zone corresponding to the luminous component of the nitride-based semiconductor device layer of narrating later 60.In addition, the regional 51b of n type GaN substrate 51 is examples of " first area " of the present invention, and the zone that is formed with the slot part 51a of n type GaN substrate 51 is an example of " second area " of the present invention.After this remove mask layer 65.
After this as shown in figure 19, use the technology identical with first execution mode shown in Figure 6, on the regional 51b of n type GaN substrate 51 on, on the bottom surface and side of slot part 51a,, form nitride-based semiconductor device layer 60 across resilient coating 52.At this moment, form resilient coating 52, n type coating layer 53, n side carrier limiting layer 54, MQW active layer 55, p sidelight conducting shell 56, p side carrier limiting layer 57, p type coating layer 58 and p side contact layer 59 successively from n type GaN substrate 51 1 sides.In addition, when forming above-mentioned each layer (52～59), the identical thickness and the composition of each layer (2～9) of formation and the nitride-based semiconductor of above-mentioned first execution mode.Just, the n type coating layer 53 that forms across resilient coating 52 on n type GaN substrate 51 is by n type Al 0.07Ga 0.93N constitutes, and has the lattice constant of about 0.3184nm.In addition, n type coating layer 53 is examples of " nitride-based semiconductor layer " of the present invention.
Wherein in the 4th execution mode,, on n type GaN substrate 51, form by n type Al across resilient coating 52 because of the section configuration of slot part 51a is a mesa 0.07Ga 0.93During n type coating layer 53 that N constitutes, think that the Ga of a constituent material part of n type coating layer 53 moves to the inclined side of slot part 51a easily.Therefore, the Al ratio of components of the n type coating layer 53 that forms on the side of slot part 51a is lower than the Al ratio of components of the n type coating layer 53 that forms on the regional 51b of n type GaN substrate 51.Specifically, be about 7% with respect to the Al ratio of components of the n type coating layer 53 that on the regional 51b of n type GaN substrate 51, forms, the Al ratio of components of the n type coating layer 53 that forms on the side of slot part 51a is about 6.6%.In this case, be positioned at the lattice constant of the low part of the Al ratio of components of the n type coating layer 53 on the side of slot part 51a, approach the lattice constant of n type GaN substrate 51, so the low part of Al ratio of components of the n type coating layer 53 on the side that is arranged in slot part 51a, the lattice constant difference between n type GaN substrate 51 and the n type coating layer 53 diminishes.Therefore, even because have about 0.3189nm lattice constant n type GaN substrate 51 and have about 0.3184nm lattice constant by n type Al 0.07Ga 0.93Lattice constant between the n type coating layer 53 that N constitutes is poor, be out of shape and cause on n type coating layer 53, producing, this distortion also can be eased in the low part of Al ratio of components of the n type coating layer 53 on the side that is arranged in slot part 51a, so the distortion that produces on n type coating layer 53 diminishes.Therefore, the amount that can be suppressed at the crackle that produces on the n type coating layer 53 increases, and can suppress also to comprise that the amount of the crackle that produces on the nitride-based semiconductor device layer 60 of n type coating layer 53 increases.
After this, use and Fig. 7～identical technology of first execution mode shown in Figure 11, form the protrusion 61 that extends along [1-100] direction (with reference to Figure 34), be formed with current barrier layer 62, p side Ohmic electrode 63 and the p side liner electrode 64 of peristome 62a then successively.In addition, the regulation zone on the inside of n type GaN substrate 51 forms n side Ohmic electrode 15 and n side liner electrode 16 successively.In addition, in this 4th execution mode, owing to slot part 51a forms in the mode of extending along [1-100] direction (with reference to Figure 34), so the protrusion 61 that extends along [1-100] direction does not intersect with slot part 51a.In addition, protrusion 61 is a current path, and the below of protrusion 61 is a luminous component.In addition, when forming current barrier layer 62, p side Ohmic electrode 63 and p side liner electrode 64, form thickness and the composition identical with the current barrier layer 12 of above-mentioned first execution mode, p side Ohmic electrode 13 and p side liner electrode 14.
After this, separate and cleavage with the above-mentioned first execution mode components identical by carrying out, form the nitride-based semiconductor laser device of the 4th execution mode shown in Figure 20.
In addition as shown in figure 20, in the nitride-based semiconductor laser device that the manufacturing process with the 4th execution mode forms, the slot part 51a (with reference to Figure 19) of n type GaN substrate 51 becomes the stage portion 51c with the side that tilts because of above-mentioned element separation circuit.Just, in the nitride-based semiconductor laser device that the manufacturing process with the 4th execution mode forms, the Al ratio of components of the n type coating layer 53 that forms on the side of the stage portion 51c of n type GaN substrate 51 is lower than the Al ratio of components of the n type coating layer 53 that forms on the regional 51b of n type GaN substrate 51.
As mentioned above, in the 4th execution mode, on n type GaN substrate 51, when resilient coating 52 forms nitride-based semiconductor device layer 60, by making the Al ratio of components of the n type coating layer 53 that on slot part 51a side, forms, be lower than the Al ratio of components of the n type coating layer 53 that on the regional 51b of n type GaN substrate 51, forms, therefore, even because have about 0.3189nm lattice constant n type GaN substrate 51 and have about 0.3184nm lattice constant by n type Al 0.07Ga 0.93Lattice constant between the n type coating layer 53 that N constitutes is poor, be out of shape and cause on n type coating layer 53, producing, the low part of Al ratio of components of the n type coating layer 53 of this distortion on the side that is arranged in slot part 51a is eased, so the distortion that produces on n type coating layer 53 diminishes.Therefore, can be suppressed at the rough sledding generation of the crackle amount increase that produces on the n type coating layer 53.Therefore can suppress to comprise that the amount of the crackle that produces on the nitride-based semiconductor device layer 60 of n type coating layer 53 increases, so can suppress to offer the increase of leakage current of luminous component of nitride-based semiconductor device layer 60 and the rough sledding of the obstruction fiber waveguide that produces because of crackle because of crackle.Its result can suppress the reduction of nitride-based semiconductor laser device characteristic and rate of finished products.
As mentioned above, in the 4th execution mode, when forming slot part 51a on n type GaN substrate 51, the A/F by making slot part 51a forms to openend gradually from the bottom surface of slot part 51a with enlarging, on n type GaN substrate 51 across resilient coating 52 formation by n type Al 0.07Ga 0.93During n type coating layer 53 that N constitutes, the Ga of the constituent material part of n type coating layer 53 compares with Al, move to growing surface easily, it is believed that Ga moves to the side of slot part 51a easily, so can easily make the Al ratio of components of the n type coating layer 53 that on the side of slot part 51a, forms, be lower than the Al ratio of components of the n type coating layer 53 that on the regional 51b of n type GaN substrate 51, forms.
In addition, the effect of other of the 4th execution mode is identical with above-mentioned first execution mode.
(the 5th execution mode)
Figure 21 is the sectional drawing of manufacturing process that is used to illustrate the nitride-based semiconductor laser device of the 5th execution mode of the present invention.With reference to Figure 21, different with above-mentioned the 4th execution mode in this 5th execution mode, to the A/F of the slot part that will on n type GaN substrate, form, describe to the situation that openend reduces gradually from the bottom surface of slot part.
In the manufacturing process of the nitride-based semiconductor laser device of the 5th execution mode, as shown in figure 21, at first use and Fig. 1～identical technology of first execution mode shown in Figure 4, on n type GaN substrate 71, formation has the depth D 41 of about 2 μ m, and the slot part 71a of the striated that extends on prescribed direction (elongated shape).But, in this 5th execution mode, when on n type GaN substrate 71, forming slot part 71a, n type GaN substrate 71 is obliquely installed on the base at Etaching device (not expression among the figure), and by making n type GaN substrate 71 limits rotations rim etching, the section configuration of slot part 71a is formed reversed-trapezoid shape.Just, forming the A/F make slot part 71a reduces to openend gradually from the bottom surface of slot part 71a.Specifically, the A/F W41 of the slot part 71a of formation is about 50 μ m, and the bottom width W42 of slot part 71a is about 53 μ m.Distance W 43 between the slot part 71a of adjacency is set at about 200 μ m.So in n type GaN substrate 71, the regional 71b of the width W with about 200 μ m 43 of being clamped by slot part 71a is the zone corresponding to the luminous component of the below of the protrusion that is arranged in the nitride-based semiconductor device layer (figure does not have expression).In addition, n type GaN substrate 71 is examples of " nitride-based semiconductor substrate " of the present invention.In addition, the regional 71b of n type GaN substrate 71 is examples of " first area " of the present invention, and the zone that is formed with the slot part 71a of n type GaN substrate 71 is an example of " second area " of the present invention.
In addition, the n type GaN substrate 71 of the 5th execution mode is identical with the n type GaN substrate 1 of above-mentioned first execution mode, has the surface of (0001) face, and has low dislocation density.In addition, n type GaN substrate 71 has the lattice constant of about 0.3189nm.
In addition, the manufacturing process after this of the 5th execution mode is identical with above-mentioned first execution mode.
As mentioned above, in the 5th execution mode, during the slot part 71a that on n type GaN substrate 71, forms, the A/F that makes slot part 71a by formation reduces to openend gradually from the bottom surface of slot part 71a, when on n type GaN substrate 71, forming the nitride-based semiconductor layer, compare with first execution mode of lateral vertical above n type GaN substrate 1 of slot part 1a, the constituent material of nitride-based semiconductor layer is difficult to pile up on the side of slot part 71a, so can make the thickness of the nitride-based semiconductor layer that on the side of slot part 71a, forms easilier, less than the thickness of the nitride-based semiconductor layer that on the regional 71b of n type GaN substrate 71, forms.
In addition, the effect of other of the 5th execution mode is identical with above-mentioned first execution mode.
(the 6th execution mode)
With reference to Figure 22, different with the above-mentioned the 4th and the 5th execution mode in this 6th execution mode, there is the situation of step shape to describe to the side of the slot part that on n type GaN substrate, forms.
In the manufacturing process of the nitride-based semiconductor laser device of the 6th execution mode, as shown in figure 22, at first use and Fig. 1～identical technology of first execution mode shown in Figure 4, on n type GaN substrate 81, be formed on the slot part 81a of the striated (elongated shape) that extends on the prescribed direction.But in this 6th execution mode, the etching work procedure that is used to form slot part 81a carries out twice.Specifically, in primary etching work procedure, form first slot part of the depth D 51 with the width W 51 of about 50 μ m, about 1 μ m.After this, in secondary etching work procedure, the bottom of first slot part that in primary etching work procedure, forms, formation has second slot part of the depth D 52 of the width W 52 of about 30 μ m, about 1 μ m.Like this, on n type GaN substrate 81, formation has width (width of the openend) W51 of about 50 μ m and the depth D 53 of about 2 μ m, and there is the slot part 81a of step shape the side.In addition, the distance W 53 between the slot part 81a of adjacency is set at about 200 μ m.And in n type GaN substrate 81, the regional 81b of the width W with about 200 μ m 53 of being clamped by slot part 81a, for the corresponding zone of luminous component of the below of the protrusion that is arranged in the nitride-based semiconductor layer (figure does not have expression).In addition, n type GaN substrate 81 is examples of " nitride-based semiconductor substrate " of the present invention.In addition, the regional 81b of n type GaN substrate 81 is examples of " first area " of the present invention, and the zone that is formed with the slot part 81a of n type GaN substrate 81 is an example of " second area " of the present invention.
In addition, the n type GaN substrate 81 of the 6th execution mode is identical with the n type GaN substrate 1 of above-mentioned first execution mode, has the surface of (0001) face, and has low dislocation density.In addition, n type GaN substrate 81 has the lattice constant of about 0.3189nm.
In addition, the manufacturing process after this of the 6th execution mode is identical with above-mentioned first execution mode.
As mentioned above, in the 6th execution mode, by on n type GaN substrate, forming slot part 81a, and step shape is arranged in the side of slot part 81a, can obtains and the identical effect of above-mentioned first execution mode with the striated (elongated shape) that extends in prescribed direction.
In first～the 6th above-mentioned execution mode and the 7th and the 8th execution mode shown below, on (0001) of GaN substrate face, form the nitride-based semiconductor layer, but the present invention is not limited to this, on the oriented surface of other faces of GaN substrate, also can form the nitride-based semiconductor layer.For example on (H, the K ,-H-K, 0) of (1-100), (11-20) face etc. face, also can form the nitride-based semiconductor layer.In the case, owing on luminescent layer, do not produce piezoelectric field, the luminous efficiency of luminescent layer is improved.The the 7th and the 8th execution mode to such example describes below.
(the 7th execution mode)
The difference of the nitride-based semiconductor laser device of the nitride-based semiconductor laser device of the 7th execution mode and first execution mode is, use the point of the n type GaN substrate 91 on surface as substrate with (11-20) face, and the point that forms in the mode of extending along [1-100] direction of slot part 91a.Below with reference to Figure 23 and Figure 24, the manufacturing process of the nitride-based semiconductor laser device of the 7th execution mode of the present invention is described.
In the 7th execution mode, also use and Fig. 1～identical technology of first execution mode shown in Figure 4, on n type GaN substrate 91, formation has the width W 61 of about 50 μ m and the degree of depth of about 2 μ m, and has the slot part 91a of the striated (elongated shape) of lateral vertical above n type GaN substrate 91.But as previously mentioned, in the 7th execution mode, n type GaN substrate 91 has (11-20) face, and slot part 91a forms in the mode of extending along [1-100] direction.At this moment, the regional 91b that is formed the width W 62 with [0001] direction of the zone of slot part 91a clamping is formed.In addition, n type GaN substrate 91 is examples of " nitride-based semiconductor substrate " of the present invention, and the zone that is formed with slot part 91a is an example of " second area " of the present invention, and regional 91b is an example of " first area " of the present invention.
Then, use and the identical technology of above-mentioned first execution mode, on n type GaN substrate 91, form nitride-based semiconductor layer 90.This nitride-based semiconductor layer 90 is identical with above-mentioned first execution mode, from n type GaN substrate 91 1 sides, forms n type coating layer, active layer and p type coating layer.
In the n type coating layer in being included in nitride-based semiconductor layer 90, generally use the AlGaN layer, this AlGaN layer is different and different because of the direction of crystallographic axis with lattice constant difference between the n type GaN substrate.Al for example 0.07Ga 0.93The axial lattice constant of a of N and GaN is respectively about 0.3184nm and about 0.3189nm, and their ratio is 0.9984.On the other hand, Al 0.07Ga 0.93The axial lattice constant of the c of N and GaN is respectively about 0.5172nm and about 0.5186nm, and their ratio is 0.9973.Like this, Al 0.07Ga 0.93Lattice constant between N and the GaN is 0.9984 than at a direction of principal axis, is 0.9973 at the c direction of principal axis, and it is big that the c direction of principal axis departs from 1 degree.Therefore, compare with first～the 6th execution mode of the GaN substrate of (0001) face that axially only has a axle in the use face, use comprises the 7th execution mode of the n type GaN substrate 91 of c axial (11-20) face as axially having in the face, and it is big that distortion that applies on the AlGaN layer and stress become.Therefore, in the nitride-based semiconductor laser device of the 7th execution mode, compare with the nitride-based semiconductor laser device of first～the 6th execution mode, on the AlGaN layer, be easy to generate crackle, its result is easy to generate crackle on nitride-based semiconductor layer 90.
So, in the 7th execution mode, the slot part 91a that is arranged on the n type GaN substrate 91 is arranged to extend along [1-100] direction.
Just, [1-100] direction is equivalent to the m direction of principal axis, and the size of axial distortion of m or stress equates substantially with the size of axial distortion of a or stress in crystal structure.Therefore have in use under the situation of substrate of (11-20) face, owing to compare with [1-100] m direction of principal axis, [0001] axial distortion of c or stress are big, thus with compare with the direction that [1-100] direction is intersected, on the direction of intersecting with [0001] direction, be easy to generate crackle.Like this, by as the 7th execution mode, slot part 91a is set, can be suppressed at the expansion of the crackle that produces on the direction of intersecting effectively with [0001] direction along [1-100] direction of principal axis that intersects with [0001] direction.Like this in the 7th execution mode, because can be in the expansion of the direction inhibition crackle that produces a large amount of crackles, so can obtain bigger effect.
In this external the 7th execution mode, as above-mentioned the 4th execution mode, preferably make on n type GaN substrate 91 A/F of the slot part 91a that forms, enlarge gradually to openend from the bottom surface of slot part 91a.Because the section configuration of the slot part 91a of Xing Chenging is a mesa like this, form on n type GaN substrate 91 when comprising the nitride-based semiconductor layer 90 of AlGaN layer, the Ga of a part of constituent material that it is believed that the AlGaN layer is easily to inclined side one side shifting of slot part 91a.Therefore, the Al ratio of components of the AlGaN layer that forms on the side of slot part 91a is lower than the Al ratio of components of the AlGaN layer that forms on the regional 91b of n type GaN substrate 91.Specifically, form under the situation that the Al ratio of components is about 7% layer as the AlGaN layer, with respect to the Al ratio of components of the AlGaN layer that forms on the regional 91b of n type GaN substrate 91 is about 7%, and the Al ratio of components of the AlGaN layer that forms on the side of slot part 91a is about 1.4%.In this case, the lattice constant that is positioned at the lattice constant of the low part of the Al ratio of components of the AlGaN layer on the side of slot part 91a and n type GaN substrate 91 is approaching, so the low part of Al ratio of components of the AlGaN layer on the side that is arranged in slot part 91a, the lattice constant difference between n type GaN substrate 91 and the AlGaN layer diminishes.Therefore, even because the lattice constant between the AlGaN layer in n type GaN substrate 91 and the nitride-based semiconductor layer 90 is poor, be out of shape and cause on the AlGaN layer, producing, the low part of Al ratio of components of the AlGaN layer of this distortion on the side that is arranged in slot part 91a can be eased, so the distortion that produces on the AlGaN layer diminishes.Like this, can be suppressed at the increase of the crackle amount that produces on the AlGaN layer, and also can suppress to comprise the increase of the crackle amount that produces on the nitride-based semiconductor layer 90 of AlGaN layer.
In addition, the manufacturing process after this of the 7th execution mode is identical with the manufacturing process of above-mentioned first execution mode.
In addition, the effect of the 7th execution mode is identical with the effect of above-mentioned first execution mode.
(the 8th execution mode)
The difference of the nitride-based semiconductor laser device of the nitride-based semiconductor laser device of the 8th execution mode and first execution mode is, use the point of the n type GaN substrate 101 on surface as substrate with (1-100) face, and the point that forms in the mode of extending along [11-20] direction of slot part 101a.Below with reference to Figure 25 and Figure 26, the manufacturing process of the nitride-based semiconductor laser device of the 8th execution mode of the present invention is described.
In the 8th execution mode, also use and Fig. 1～identical technology of first execution mode shown in Figure 4, on n type GaN substrate 101, formation has the width W 71 of about 50 μ m and the degree of depth of about 2 μ m, and has the slot part 101a of the striated (elongated shape) of lateral vertical above n type GaN substrate 101.But as previously mentioned, in the 8th execution mode, n type GaN substrate 101 has (1-100) face, and slot part 101a then forms in the mode of extending along [11-20] direction.At this moment, the regional 101b that is formed the width W 72 with [0001] direction of the zone of slot part 101a clamping is formed.In addition, n type GaN substrate 101 is examples of " nitride-based semiconductor substrate " of the present invention, and the zone that is formed with slot part 101a is an example of " second area " of the present invention, and regional 101b is an example of " first area " of the present invention.
Use and the identical technology of above-mentioned first execution mode then, on n type GaN substrate 101, form nitride-based semiconductor layer 100.This nitride-based semiconductor layer 100 is identical with above-mentioned first execution mode, from n type GaN substrate 101 1 sides, has n type coating layer, active layer and p type coating layer.
The n type GaN substrate 101 that uses in the 8th execution mode is also identical with above-mentioned the 7th execution mode, and direction includes the c direction of principal axis in the face.Therefore, compare with first～the 6th execution mode of the GaN substrate of (0001) face that axially only has a axle in the use face, use comprises the 8th execution mode of the n type GaN substrate 101 of c axial (1-100) face as axially having in the face, and it is big that distortion that applies on the AlGaN layer and stress become.Therefore, the nitride-based semiconductor laser device of the nitride-based semiconductor laser device of the 8th execution mode and first～the 6th execution mode is compared, also be easy to generate crackle on the AlGaN layer, its result is easy to generate crackle on nitride-based semiconductor layer 100.
So, in the 8th execution mode, the slot part 101a that is arranged on the n type GaN substrate 101 is arranged to extend along [11-20] direction.
Just, [11-20] direction is equivalent to a direction of principal axis, in the 8th execution mode of the n type GaN substrate 101 that uses (1-100) face, and compares with the direction that [11-20] direction is intersected, and is easy to generate crackle on the direction of intersecting with [0001] direction.Therefore, by as the 8th execution mode, slot part 101a is set, can be suppressed at the expansion of the crackle that produces on the direction of intersecting effectively with [0001] direction along [11-20] direction of principal axis that intersects with [0001] direction.Like this in the 8th execution mode, because can be in the expansion of the direction inhibition crackle that produces a large amount of crackles, so can obtain bigger effect.
In this external the 8th execution mode, as above-mentioned the 4th execution mode, preferably make on n type GaN substrate 101 A/F of the slot part 101a that forms, enlarge gradually to openend from the bottom surface of slot part 101a.Because the section configuration of the slot part 101a of Xing Chenging is a mesa like this, form on n type GaN substrate 101 when comprising the nitride-based semiconductor layer 100 of AlGaN layer, the Ga of a part of constituent material that it is believed that the AlGaN layer is easily to inclined side one side shifting of slot part 101a.Therefore, the Al ratio of components of the AlGaN layer that forms on the side of slot part 101a is lower than the Al ratio of components of the AlGaN layer that forms on the regional 101b of n type GaN substrate 101.Specifically, form under the situation that the Al ratio of components is about 7% layer as the AlGaN layer, with respect to the Al ratio of components of the AlGaN layer that forms on the regional 101b of n type GaN substrate 101 is about 7%, and the Al ratio of components of the AlGaN layer that forms on the side of slot part 101a is about 0.7%.In this case, the lattice constant that is positioned at the lattice constant of the low part of the Al ratio of components of the AlGaN layer on the side of slot part 101a and n type GaN substrate 101 is approaching, so the low part of Al ratio of components of the AlGaN layer on the side that is arranged in slot part 101a, the lattice constant difference between n type GaN substrate 101 and the AlGaN layer diminishes.Therefore, even because the lattice constant between the AlGaN layer in n type GaN substrate 101 and the nitride-based semiconductor layer 100 is poor, be out of shape and cause on the AlGaN layer, producing, the low part of Al ratio of components of the AlGaN layer of this distortion on the side that is arranged in slot part 101a can be eased, so the distortion that produces on the AlGaN layer diminishes.Like this, can be suppressed at the increase of the crackle amount that produces on the AlGaN layer, and also can suppress to comprise the increase of the crackle amount that produces on the nitride-based semiconductor layer 100 of AlGaN layer.
In addition, the manufacturing process after this of the 8th execution mode is identical with the manufacturing process of above-mentioned first execution mode.
In addition, the effect of the 8th execution mode is identical with the effect of above-mentioned the 7th execution mode.
(the 9th execution mode)
The difference of the nitride-based semiconductor laser device of the nitride-based semiconductor laser device of the 9th execution mode and the 7th execution mode is, use the point of the n type GaN substrate 111 on surface as substrate with (11-22) face, and the point that enlarges gradually to openend from the bottom surface of slot part of the openend that makes slot part.Below with reference to Figure 27 and Figure 28, the manufacturing process of the nitride-based semiconductor laser device of the 9th execution mode of the present invention is described.
In the 9th execution mode, use and Figure 17～identical technology of the 4th execution mode shown in Figure 20, on n type GaN substrate 111, formation has width (width of the openend) W81 of about 50 μ m and the degree of depth of about 2 μ m, and has the slot part 111a of the striated (elongated shape) of the section configuration of mesa shaped.But as previously mentioned, in the 9th execution mode, n type GaN substrate 111 has (11-22) face, and slot part 111a forms in the mode of extending along [1-100] direction.At this moment, the regional 111b that is formed the width W 82 with y direction of narrating later of the zone of slot part 111a clamping is formed.In addition, n type GaN substrate 111 is examples of " nitride-based semiconductor substrate " of the present invention, and the zone that is formed with slot part 111a is an example of " second area " of the present invention, and regional 111b is an example of " first area " of the present invention.
Use mocvd method then, on the regional 111b of n type GaN substrate 111 on, on the bottom surface and side of slot part 111a, form each layer (53～59) of the nitride-based semiconductor that constitutes nitride-based semiconductor layer 110 successively across resilient coating 52.
Specifically, in the time of near substrate temperature reaches about 1160 ℃, by using H as current-carrying gas 2Gas provides TMGa (trimethyl gallium) gas (about 66 μ mol/ branches) and TMAl (trimethyl aluminium) gas (about 0.26 μ mol/ branch) in reacting furnace, on n type GaN substrate 111, make have about 0.8 μ m thick by the Al that undopes 0.01Ga 0.99The resilient coating 52 that N constitutes was with about 1.1 μ m/ hours speed growth.After this, by using H as current-carrying gas 2Gas provides TMGa gas (about 90 μ mol/ branches), TMAl gas (about 2.4 μ mol/ branches) and the GeH of the Ge raw material that is mingled with as the n type in reacting furnace 4(first germane) gas (about 0.24 μ mol/ branch) on resilient coating 52, makes to have the thick n type Al by doped with Ge of about 1.8 μ m 0.07Ga 0.93The n type coating layer 53 that N constitutes was with about 1.1 μ m/ hours speed growth.
Have again, by using H as current-carrying gas 2Gas also provides TMGa gas (about 48 μ mol/ branches) and TMAl gas (about 4.7 μ mol/ branches) in reacting furnace, on n type coating layer 53, make have about 20 μ m thick by plain Al 0.2Ga 0.8The n side carrier limiting layer 54 that N constitutes was with about 1 μ m/ hour speed growth.
After this substrate temperature is dropped to about 850 ℃ from about 1160 ℃.Then, by using N as current-carrying gas 2Gas provides TMGa (trimethyl gallium) gas of Ga raw material and TMIn (trimethyl indium) gas of In raw material in reacting furnace, on n side carrier limiting layer 54, make have about 20nm thick by plain In 0.02Ga 0.98Four barrier layers that N constitutes (not expression among the figure) and have about 3.5nm thick by plain In 0.15Ga 0.85Three quantum well layers that N constitutes (not expression among the figure) are alternately grown with about 0.25 μ m/ hour speed.Like this, formation has four barrier layers and three MQW active layers 55 that the alternately laminated multiple quantum trap of quantum well layer constructed.Subsequently on MQW active layer 55, make have about 0.1 μ m thick by plain In 0.01Ga 0.99N constitutes 56 growths of p sidelight conducting shell.After this, by using N as current-carrying gas 2Gas provides TMGa gas (about 103 μ mol/ branches) and TMAl gas (about 400 μ mol/ branches) in reacting furnace, on p sidelight conducting shell 56, make have about 20nm thick by the Al that undopes 0.2Ga 0.8The p side carrier limiting layer 57 that N constitutes was with about 1.2 μ m/ hours speed growth.
Then substrate temperature is heated to about 1160 ℃ from about 850 ℃.Then, by using N as current-carrying gas 2Gas provides TMGa gas (about 54 μ mol/ branches), TMAl gas (about 1.7 μ mol/ branches) and the Mg (C of the Mg raw material that is mingled with as the p type in reacting furnace 5H 5) 2(cyclopentadiene closes magnesium) gas (about 0.038 μ mol/ branch) on p side carrier limiting layer 57, makes to have the thick p type Al by doped with Mg of about 0.45 μ m 0.07Ga 0.93The p type coating layer 58 that N constitutes was with about 1.1 μ m/ hours speed growth.In addition, be associated with the kind and the quantity delivered of dopant gas, the Al of AlGaN forms and the speed of growth can change, so adjust the supply flow rate of TMGa gas and TMAl gas, makes n type coating layer 53 with identical Al composition and p type coating layer 58 with identical growth.After this, substrate temperature is dropped to about 850 ℃ from about 1160 ℃.Then, by using N as current-carrying gas 2Gas provides TMGa gas and TMIn gas in reacting furnace, on p type coating layer 58, make have about 3nm thick by the In that undopes 0.07Ga 0.93The p side contact layer 59 that N constitutes was with about 0.25 μ m/ hour speed growth.Like this, on the regional 111b of n type GaN substrate 111, on the bottom surface and side of slot part 111a,, form nitride-based semiconductor device layer 110 by each layer (53～59) formation of nitride-based semiconductor across resilient coating 52.
In the n type coating layer 53 in being included in nitride-based semiconductor device layer 110, use the AlGaN layer, this AlGaN layer is different and different because of the crystalline axis direction of substrate with lattice constant difference between the n type GaN substrate.Al for example 0.07Ga 0.93The axial lattice constant of a of N and GaN is respectively about 0.3184nm and about 0.3189nm, and their ratio is 0.9984.On the other hand, Al 0.07Ga 0.93The axial lattice constant of the c of N and GaN is respectively about 0.5172nm and about 0.5186nm, and their ratio is 0.9973.Like this, Al 0.07Ga 0.93Lattice constant between N and the GaN is 0.9984 than at a direction of principal axis, is 0.9973 at the c direction of principal axis, and departing from 1 degree with the c direction of principal axis serves as big.Therefore, have in use in the 9th execution mode of GaN substrate of (11-22) face, the direction in the face comprises [1-100] direction and perpendicular to the direction (being expressed as the y direction at this) of [1-100] direction and [11-22] direction.The AlGaN of [1-100] direction and the lattice constant of GaN than with the lattice constant of axial AlGaN of a and GaN than equating.On the other hand, the y direction is owing to have a direction of principal axis and the axial composition of c, the AlGaN of y direction and the lattice constant of GaN are than the median that is the lattice constant ratio of a direction of principal axis and axial AlGaN of c and GaN, and be bigger than the lattice constant ratio of axial AlGaN of a and GaN.Therefore compare with first～the 6th execution mode of GaN substrate of (0001) face that axially only has a axle in the use face, the distortion and the stress that use the 9th execution mode of the n type GaN substrate 111 with (11-22) face to apply on the AlGaN layer become big.Therefore, in the nitride-based semiconductor laser device of the 9th execution mode, compare with the nitride-based semiconductor laser device of first～the 6th execution mode, on the AlGaN layer, be easy to generate crackle, its result is easy to generate crackle on nitride-based semiconductor layer 110.
So in the 9th execution mode, the slot part 111a that will be provided with on n type GaN substrate 111 is arranged to extend along [1-100] direction.
Just, [1-100] direction is equivalent to the m direction of principal axis, and the size of axial distortion of m or stress equates substantially with the size of axial distortion of a or stress in crystal structure.Therefore have in use under the situation of substrate of (11-22) face, owing to compare with [1-100] m direction of principal axis, the distortion or the stress of y direction are big, thus with compare with the direction that [1-100] direction is intersected, on the direction of intersecting with the y direction, be easy to generate crackle.Like this, by as the 9th execution mode, slot part 111a is set, can be suppressed at the expansion of the crackle that produces on the direction of intersecting effectively with the y direction along [1-100] direction of principal axis that intersects with the y direction.Like this in the 9th execution mode, because can be in the expansion of the direction inhibition crackle that produces a large amount of crackles, so can obtain bigger effect.
In this external the 9th execution mode, as above-mentioned the 4th execution mode, make on n type GaN substrate 111 A/F of the slot part 111a that forms, enlarge gradually to openend from the bottom surface of slot part 111a.Because the section configuration of the slot part 111a of Xing Chenging is a mesa like this, form on n type GaN substrate 111 when comprising the nitride-based semiconductor layer 110 of AlGaN layer, the Ga of a part of constituent material that it is believed that the AlGaN layer is easily to inclined side one side shifting of slot part 111a.Therefore, the Al ratio of components of the AlGaN layer that forms on the side of slot part 111a is lower than the Al ratio of components of the AlGaN layer that forms on the regional 111b of n type GaN substrate 111.Specifically, form under the situation that the Al ratio of components is about 7% layer as the AlGaN layer, the Al ratio of components of the n type coating layer 53 that constitutes with respect to the n type AlGaN layer by doped with Ge that forms on the regional 111b of n type GaN substrate 111 is about 7%, and the Al ratio of components of the AlGaN layer that forms on the side of slot part 111a is about 1.7%～about 2.6%.In addition, form under the situation that the Al ratio of components is about 7% layer as the AlGaN layer, the Al ratio of components of the p type coating layer 58 that constitutes with respect to the p type AlGaN layer by doped with Mg that forms on the regional 111b of n type GaN substrate 111 is about 7%, and the Al ratio of components of the AlGaN layer that forms on the side of slot part 111a is about 3.9%～about 4.3%.In this case, the lattice constant that is positioned at the lattice constant of the low part of the Al ratio of components of the AlGaN layer on the side of slot part 111a and n type GaN substrate 111 is approaching, so the low part of Al ratio of components of the AlGaN layer on the side that is arranged in slot part 111a, the lattice constant difference between n type GaN substrate 111 and the AlGaN layer diminishes.Therefore, even because the lattice constant between the AlGaN layer in n type GaN substrate 111 and the nitride-based semiconductor layer 110 is poor, be out of shape and cause on the AlGaN layer, producing, the low part of Al ratio of components of the AlGaN layer of this distortion on the side that is arranged in slot part 111a can be eased, so the distortion that produces on the AlGaN layer diminishes.Like this, can be suppressed at the increase of the crackle amount that produces on the AlGaN layer, and also can suppress to comprise the increase of the crackle amount that produces on the nitride-based semiconductor layer 110 of AlGaN layer.
In addition, the manufacturing process after this of the 9th execution mode is identical with the manufacturing process of above-mentioned the 7th execution mode.
As mentioned above, in the 9th execution mode, by so that the surface of n type GaN substrate 111 has the mode of (11-22) face of (H, K ,-H-K, L) face constitutes, generally be applied with on the nitride-based semiconductor layer under the enterolithic situation of face, when the surface of nitride-based semiconductor substrate is (0001) face, the piezoelectric field maximum that on the nitride-based semiconductor layer, produces, when on the surface of nitride-based semiconductor substrate being the face beyond (0001) face, the piezoelectric field that produces than at (0001) face the time in the piezoelectric field that produces on the nitride-based semiconductor layer is little.Like this, be (11-22) face beyond (0001) face, can reduce the piezoelectric field that on MQW active layer 55, produces by the surface that makes the nitride-based semiconductor substrate.Like this, luminous efficiency is improved.
In this external the 9th execution mode, be (11-22) face by the surface that makes n type GaN substrate 111, in the arrangement of atom, owing to can form the step of atomic layer height on the surface, so growth phase on the face is relatively with few (0001) face of the step of atomic layer height from the teeth outwards, (11-20) face with (1-100), it is the step flow growth that starting point is grown that the mode of crystalline growth becomes easily with the step, and its result can make crystal property improve.
In addition, other effects of the 9th execution mode are identical with above-mentioned the 7th execution mode.
(the tenth execution mode)
The nitride-based semiconductor laser device of the tenth execution mode is that with the difference of the nitride-based semiconductor laser device of the 9th execution mode the direction of slot part is different.Below with reference to Figure 29 and Figure 30, the manufacturing process of the nitride-based semiconductor laser device of the tenth execution mode of the present invention is described.
In the tenth execution mode, use and the identical technology of above-mentioned the 9th execution mode, formation has width (width of the openend) W91 of about 50 μ m and the degree of depth of about 2 μ m on n type GaN substrate 121, and has striated (elongated shape) the slot part 121a of the section configuration of step shape.But, in the tenth execution mode, form slot part 121a in the mode of extending along the y direction of above-mentioned the 9th execution mode.At this moment, the regional 121b that is formed the width W 92 with [1-100] direction of the zone of slot part 121a clamping is formed.In addition, n type GaN substrate 121 is examples of " nitride-based semiconductor substrate " of the present invention, and the zone that is formed with slot part 121a is an example of " second area " of the present invention, and regional 121b is an example of " first area " of the present invention.
Use and the identical technology of above-mentioned the 9th execution mode then, on n type GaN substrate 121, form nitride-based semiconductor layer 120.This nitride-based semiconductor layer 120 is identical with above-mentioned the 9th execution mode, from n type GaN substrate 121 1 sides, has n type coating layer 53, MQW active layer 55 and p type coating layer 58.
In addition, the manufacturing process of other of the tenth execution mode is identical with the manufacturing process of above-mentioned the 9th execution mode.
In the tenth execution mode, on the n type GaN substrate 121 when resilient coating 52 forms the nitride-based semiconductor layers, on the side of slot part 121a, form by n type Al 0.07Ga 0.93The thickness (T1=1.1 μ m) of the n type coating layer 53 that N constitutes is less than the thickness (T2=1.8 μ m) of the n type coating layer 53 that forms on the regional 121b of n type GaN substrate 121.Therefore, even because have the n type GaN substrate 121 of about 0.3189nm lattice constant and have about 0.3184nm lattice constant by n type Al 0.07Ga 0.93Lattice constant between the n type coating layer 53 that N constitutes is poor, be out of shape and cause on n type coating layer 53, producing, because this distortion concentrates on the little part of n type coating layer 53 thickness that is positioned on the slot part 121a side, so the distortion that produces on the n type coating layer 53 of the regional 121b that is positioned at n type GaN substrate 121 can be alleviated.Like this, the distortion that can suppress to result from generation on n type coating layer 53 is big, the rough sledding that the crackle amount that produces on n type coating layer 53 increases.Therefore, also can be suppressed at the flourishing increase of the crackle amount that produces on the nitride-based semiconductor device layer 120 that comprises n type coating layer 53, so can suppress to offer the increase of leakage current of luminous component of nitride-based semiconductor device layer 120 and the rough sledding of the obstruction fiber waveguide that produces because of crackle because of crackle.Its result can suppress the reduction of nitride-based semiconductor laser device characteristic and rate of finished products.
In addition, other effects of the tenth execution mode are identical with above-mentioned the 9th execution mode.
In addition, all aspects of execution mode disclosed herein all are examples, should not be regarded as the content of restriction.Scope of the present invention is not the explanation to above-mentioned execution mode, but is represented by the scope of claim, comprises the meaning that the scope with claim is equal to and all changes in scope in addition.
For example in above-mentioned first～the tenth execution mode, used n type GaN substrate, but the present invention is not limited to this, also can use p type nitride-based semiconductor substrate, and on p type nitride-based semiconductor substrate, also can form p type nitride-based semiconductor layer, active layer and n type nitride-based semiconductor layer successively.
In addition, in above-mentioned first～the tenth execution mode, used the GaN substrate, but the present invention is not limited to this, also can uses GaN substrate nitride-based semiconductor substrate in addition.As the nitride-based semiconductor substrate beyond the GaN substrate, can enumerate, for example the nitride-based semiconductor substrate that constitutes by AlGaN, AlN, AlGaInN or AlGaInBN.
In addition, in above-mentioned first～the tenth execution mode, adopted the slot part that on n type GaN substrate, is formed with the bottom surface, but the present invention is not limited to this, also can on n type GaN substrate, forms the slot part that does not have the bottom surface.For example, as shown in figure 31, on n type GaN substrate 131, also can form section configuration is the slot part 131a of V font.In addition, n type GaN substrate 131 is examples of " nitride-based semiconductor substrate " of the present invention.As the formation adopting, identical with above-mentioned the 4th execution mode, using mocvd method etc. when n type GaN substrate 131 forms the AlGaN layers, the Ga of constituent material that it is believed that the AlGaN layer is easily to inner face one side shifting of the slot part 131a with V font section configuration.Thus, can easily make the Al ratio of components of the AlGaN layer that on the inner face of slot part 131a, forms, be lower than the Al ratio of components of the AlGaN layer that on the zone beyond the slot part 131a, forms.In addition, the regional 131b beyond the zone of the slot part 131a that is formed with n type GaN substrate 131 is the zone corresponding to the luminous component of the below of the protrusion that is positioned at the nitride-based semiconductor device layer.In addition, the regional 131b of n type GaN substrate 131 is examples of " first area " of the present invention, and the zone that is formed with the slot part 131a of n type GaN substrate 131 is an example of " second area " of the present invention.
In addition, in above-mentioned first～the tenth execution mode, the use mocvd method carries out the crystalline growth of each layer of nitride-based semiconductor, but the present invention is not limited to this, also can use hydride vapor phase oriented growth method and use with TMAl, TMGa, TMIn, NH 3, hydrazine, SiH 4, GeH 4And Mg (C 5H 5) 2Deng molecular beam oriented growth method, carry out crystalline growth as the gas source of unstrpped gas.
In addition, in above-mentioned first～the tenth execution mode, used have (0001) face, (1-100) face and (11-22) the GaN substrate on the surface of face, depart from nitride-based semiconductor substrate in about 1.0 ° of following scopes but also can use from these faces.
In addition, in the 9th and the tenth above-mentioned execution mode, used the GaN substrate on surface with (11-22) face, but the present invention is not limited to this, also can use have (11-21) face, (11-23) face, (11-24) face, (11-25) face, (2-201) face, (1-101) face, (1-102) face, (1-103) face and (1-104) the nitride-based semiconductor substrate of the planar orientation of face etc.
In addition, in above-mentioned first～the tenth execution mode, used the active layer of MQW structure, but the present invention is not limited to this,, also can obtains identical effect even have the active layer of the individual layer of the big thickness that does not have the quantum effect single quantum well structure alive.
In addition, in above-mentioned the 4th, the 7th, the 8th, the 9th and the tenth execution mode, make the bottom surface and side angulation α (with reference to Figure 18) of the slot part of the mesa shaped section configuration that on n type GaN substrate, forms be about 40 °, but the present invention is not limited to this, and the bottom surface of slot part and side angulation α are about just passable more than 15 °.In addition, when the inclination of slot part side is releived, also can make the Al ratio of components of the nitride-based semiconductor layer (AlGaN layer) that on the slot part side, forms, be lower than the Al ratio of components of the nitride-based semiconductor layer (AlGaN layer) that on the zone beyond the slot part, forms.
In addition, in above-mentioned the 4th, the 7th, the 8th and the 9th execution mode, adopted the section configuration that makes slot part almost to become to face the formation that claims, but asymmetric formation is also passable about (0001) face or y direction.Just, in Figure 18, also can be the bottom surface that makes slot part 51a and different angle about side angulation α is.
In addition, in above-mentioned the 7th～the tenth execution mode, can also be on the basis of the slot part that [1-100] direction, [11-20] direction or y direction are extended, further form the side upwardly extending groove vertical, and can make cancellate groove with [1-100] direction, [11-20] direction or y direction.
In addition, in above-mentioned first～the tenth execution mode, the big value of thickness of the p type layer that the slot part degree of depth preferably constitutes than the thickness of the n type layer that is made of AlGaN or by AlGaN, the more preferably scope of 0.5 μ m～30 μ m.
In addition, in above-mentioned first～the tenth execution mode, the big value of thickness of the p type layer that the width of slot part preferably constitutes than the thickness of the n type layer that is made of AlGaN or by AlGaN, the more preferably scope of 5 μ m～400 μ m.
In addition, in above-mentioned first～the tenth execution mode, corresponding to the width in the zone of the luminous component scope of 10 μ m～400 μ m preferably.

Claims (26)

1. the manufacture method of a nitride-based semiconductor optical device is characterized in that, comprising:
The regulation zone of the second area beyond the first area of the described nitride-based semiconductor substrate by will be corresponding with the luminous component of the nitride-based semiconductor layer that forms on the nitride-based semiconductor substrate is removed to the degree of depth of regulation selectively, forms the operation of slot part at described nitride-based semiconductor substrate; With
On the described first area and described slot part of described nitride-based semiconductor substrate, form the operation that it forms the nitride-based semiconductor layer different with described nitride-based semiconductor substrate.
2. the manufacture method of nitride-based semiconductor optical device as claimed in claim 1 is characterized in that,
Described nitride-based semiconductor substrate comprises the GaN substrate,
Described nitride-based semiconductor layer comprises the layer that contains Al, Ga and N.
3. the manufacture method of nitride-based semiconductor optical device as claimed in claim 2 is characterized in that,
The operation that forms described nitride-based semiconductor layer on described nitride-based semiconductor substrate comprises:
On above the described first area on described nitride-based semiconductor substrate, on the bottom surface and side of described slot part, form the operation of described nitride-based semiconductor layer,
The Al ratio of components of the described nitride-based semiconductor layer that forms on the side of described slot part is lower than the Al ratio of components of the described nitride-based semiconductor layer that forms on described nitride-based semiconductor substrate.
4. the manufacture method of nitride-based semiconductor optical device as claimed in claim 3 is characterized in that,
The operation that forms described slot part on described nitride-based semiconductor substrate comprises:
With from the bottom surface of described slot part to the mode that openend enlarges gradually, form the operation of the A/F of described slot part.
5. the manufacture method of nitride-based semiconductor optical device as claimed in claim 1 is characterized in that,
The operation that forms described nitride-based semiconductor layer on described nitride-based semiconductor substrate comprises:
On above the described first area on described nitride-based semiconductor substrate, on the bottom surface and side of described slot part, form the operation of described nitride-based semiconductor layer,
The thickness of the described nitride-based semiconductor layer that forms on the side of described slot part is littler than the thickness of the described nitride-based semiconductor layer that forms on described first area.
6. the manufacture method of nitride-based semiconductor optical device as claimed in claim 5 is characterized in that,
The operation that forms described slot part at described nitride-based semiconductor substrate comprises:
Perpendicular to the mode of described nitride-based semiconductor substrate surface, form the operation of the side of described slot part with in fact.
7. the manufacture method of nitride-based semiconductor optical device as claimed in claim 5 is characterized in that,
The operation that forms described slot part at described nitride-based semiconductor substrate comprises:
With from the bottom surface of described slot part to the diminishing mode of openend, form the operation of the A/F of described slot part.
8. the manufacture method of nitride-based semiconductor optical device as claimed in claim 1 is characterized in that,
The operation that forms described slot part at described nitride-based semiconductor substrate comprises:
On described nitride-based semiconductor substrate, described slot part formed the longilineal operation of extending in prescribed direction.
9. the manufacture method of nitride-based semiconductor optical device as claimed in claim 1 is characterized in that,
The surface of described nitride-based semiconductor substrate has (H, K ,-H-K, L) face, and wherein, H, K are integers, and H and K have at least one not to be 0.
10. the manufacture method of nitride-based semiconductor optical device as claimed in claim 9 is characterized in that,
The surface of described nitride-based semiconductor substrate has (H, K ,-H-K, 0) face.
11. the manufacture method of nitride-based semiconductor optical device as claimed in claim 9 is characterized in that,
The surface of described nitride-based semiconductor substrate has (H, K ,-H-K, L) face, and wherein, L is not 0 integer.
12. the manufacture method of nitride-based semiconductor optical device as claimed in claim 9 is characterized in that,
The operation that forms described slot part at described nitride-based semiconductor substrate comprises:
On described nitride-based semiconductor substrate, form the operation of the described slot part that extends along [K ,-H, H-K, 0] direction.
13. the manufacture method of nitride-based semiconductor optical device as claimed in claim 1 is characterized in that,
The operation that forms described slot part at described nitride-based semiconductor substrate comprises:
On described nitride-based semiconductor substrate, surrounding the mode of first area, the longilineal described slot part of the second direction extension that will intersect along first direction with first direction forms the operation of lattice shape.
14. the manufacture method of nitride-based semiconductor optical device as claimed in claim 1 is characterized in that,
Described nitride-based semiconductor layer comprises: by have the layer that constitutes with the different nitride-based semiconductors of forming of described nitride-based semiconductor substrate that form on the described first area of described nitride-based semiconductor substrate and described second area; With the luminescent layer that constitutes by the nitride-based semiconductor that on described first area, forms at least.
15. a nitride-based semiconductor optical device is characterized in that, comprising:
The nitride-based semiconductor substrate, it comprises corresponding to the first area of luminous component with by having the stage portion of specified altitude, is configured to the second area with described first area adjacency;
The nitride-based semiconductor layer, it is formed on the side of top and described stage portion of described first area of described nitride-based semiconductor substrate, and has and the different composition of described nitride-based semiconductor substrate, wherein,
The thickness of the described nitride-based semiconductor layer that forms on the thickness of the described nitride-based semiconductor layer that forms on the side of described stage portion compares on the first area is little.
16. nitride-based semiconductor optical device as claimed in claim 15 is characterized in that,
The surface of described nitride-based semiconductor substrate has (H, K ,-H-K, L) face, and wherein, H, K are integers, and H and K have at least one not to be 0.
17. nitride-based semiconductor optical device as claimed in claim 16 is characterized in that,
The surface of described nitride-based semiconductor substrate has (H, K ,-H-K, 0) face.
18. nitride-based semiconductor optical device as claimed in claim 17 is characterized in that,
Described stage portion forms in the mode of extending along [K ,-H, H-K, 0] direction.
19. nitride-based semiconductor optical device as claimed in claim 16 is characterized in that,
The surface of described nitride-based semiconductor substrate has (H, K ,-H-K, L) face, and wherein, L is not 0 integer.
20. nitride-based semiconductor optical device as claimed in claim 15 is characterized in that,
Described nitride-based semiconductor layer comprises: by form the layer that different nitride-based semiconductors constitutes with the described nitride-based semiconductor substrate that forms on the described first area of described nitride-based semiconductor substrate and described second area; With the luminescent layer that constitutes by the nitride-based semiconductor that on described first area, forms at least.
21. a nitride-based semiconductor optical device is characterized in that, comprising:
The nitride-based semiconductor substrate, it comprises corresponding to the first area of luminous component with by having the stage portion of specified altitude, is configured to the second area with described first area adjacency;
The nitride-based semiconductor layer, it is formed on the side of top and described stage portion of described first area of described nitride-based semiconductor substrate, and has and the different composition of described nitride-based semiconductor substrate, contains Al, Ga and N,
The Al ratio of components of the described nitride-based semiconductor layer that forms on the side of described stage portion is lower than the Al ratio of components of the described nitride-based semiconductor layer that forms on described first area.
22. nitride-based semiconductor optical device as claimed in claim 21 is characterized in that,
The surface of described nitride-based semiconductor substrate has (H, K ,-H-K, L) face, and wherein, H, K are integers, and H and K have at least one not to be 0.
23. nitride-based semiconductor optical device as claimed in claim 22 is characterized in that,
The surface of described nitride-based semiconductor substrate has (H, K ,-H-K, 0) face.
24. nitride-based semiconductor optical device as claimed in claim 22 is characterized in that,
The surface of described nitride-based semiconductor substrate has (H, K ,-H-K, L) face, and wherein, L is not 0 integer.
25. nitride-based semiconductor optical device as claimed in claim 24 is characterized in that,
Described stage portion forms in the mode of extending along [K ,-H, H-K, 0] direction.
26. nitride-based semiconductor optical device as claimed in claim 21 is characterized in that,
Described nitride-based semiconductor layer comprises: the layer that is made of the nitride-based semiconductor that contains Al and Ga that forms on the described first area of described nitride-based semiconductor substrate and described second area; With the luminescent layer that constitutes by the nitride-based semiconductor that on described first area, forms at least.
CNA2006101543585A 2006-03-22 2006-09-22 Method of fabricating nitride-based semiconductor light-emitting device and nitride-based semiconductor light-emitting device Pending CN101043121A (en)

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CN102668281A (en) * 2009-12-25 2012-09-12 住友电气工业株式会社 Group iii nitride semiconductor laser element, method for producing group iii nitride semiconductor laser element, and epitaxial substrate
CN102668281B (en) * 2009-12-25 2014-05-28 住友电气工业株式会社 Group iii nitride semiconductor laser element, method for producing group iii nitride semiconductor laser element, and epitaxial substrate
CN111344915A (en) * 2017-11-17 2020-06-26 三菱电机株式会社 Semiconductor laser device
CN111344915B (en) * 2017-11-17 2022-09-30 三菱电机株式会社 Semiconductor laser device
CN113646678A (en) * 2019-03-29 2021-11-12 住友大阪水泥股份有限公司 Optical waveguide element
CN113646678B (en) * 2019-03-29 2024-05-03 住友大阪水泥股份有限公司 Optical waveguide element

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Application publication date: 20070926