CN101037806A - Chromatic carbon silicon stone monocrystal and preparation method thereof and preparation of artificial gem - Google Patents
Chromatic carbon silicon stone monocrystal and preparation method thereof and preparation of artificial gem Download PDFInfo
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- CN101037806A CN101037806A CN 200710015419 CN200710015419A CN101037806A CN 101037806 A CN101037806 A CN 101037806A CN 200710015419 CN200710015419 CN 200710015419 CN 200710015419 A CN200710015419 A CN 200710015419A CN 101037806 A CN101037806 A CN 101037806A
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- moissanite
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Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 title 1
- 239000004575 stone Substances 0.000 title 1
- 239000013078 crystal Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000005498 polishing Methods 0.000 claims abstract description 5
- 238000000227 grinding Methods 0.000 claims abstract description 4
- 238000005520 cutting process Methods 0.000 claims abstract description 3
- 229910003465 moissanite Inorganic materials 0.000 claims description 118
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 59
- 239000000463 material Substances 0.000 claims description 18
- 239000000843 powder Substances 0.000 claims description 17
- 239000002019 doping agent Substances 0.000 claims description 9
- 229910021431 alpha silicon carbide Inorganic materials 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 18
- 229910052799 carbon Inorganic materials 0.000 abstract 9
- 239000000377 silicon dioxide Substances 0.000 abstract 9
- 241000376353 Stips Species 0.000 abstract 2
- 239000010437 gem Substances 0.000 description 38
- 229910001751 gemstone Inorganic materials 0.000 description 38
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000010432 diamond Substances 0.000 description 6
- 229910003460 diamond Inorganic materials 0.000 description 6
- 230000000802 nitrating effect Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 240000003936 Plumbago auriculata Species 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241000024287 Areas Species 0.000 description 1
- 244000283207 Indigofera tinctoria Species 0.000 description 1
- 235000003283 Pachira macrocarpa Nutrition 0.000 description 1
- 230000010748 Photoabsorption Effects 0.000 description 1
- 229910003923 SiC 4 Inorganic materials 0.000 description 1
- 240000001085 Trapa natans Species 0.000 description 1
- 235000014364 Trapa natans Nutrition 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 1
- 229910001573 adamantine Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 235000009165 saligot Nutrition 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a color carbon silica crystal and its preparation, as well as a preparation of artificial gem. The color carbon silica crystal contains spaced intermingling element color trips in colorness carbon silica crystal or uniform color intermingled color carbon silica crystal, wherein the width of color trips is 0.1-0.5 mm, and the distance between the color trips is 1-5 mm. The crystal is produced by intermingling the element such as V, N or the like in the process of growing the carbon silica crystal using sublimed method. The color carbon silica artificial gem having color stips is produced by cutting, grinding and polishing the produced color carbon silica crystal. The inventive first produced carbon silica crystal having color stips is carved and polished to ultimately produce color carbon silica, which has brilliant and fresh bright colour, has integrative effect of good chromaticity and brilliancy.
Description
One, technical field
The present invention relates to transparent colored moissanite (SiC) monocrystalline, growth method and with the method for this single crystal preparation hard mass.
Two, background technology
Have the element and the compound limited amount that can be used as the physical property of jewel, though thermostability, chemical stability and toughness also are considered to very important in many jewel Application Areass, it is generally acknowledged that most important physical property is hardness, specific refractory power and color.
The interaction of deciding jewel and light is mainly depended in U.S.A of jewel, so the optical property of jewel is that the decision jewel is worth one of most important factor.Specific refractory power has defined the ability of jewel refracted ray, can glisten and present beautiful gloss when high-index material is made into jewel under daylight.Color is the important embodiment of jewel U.S., is decision jewel grade, determines the important factor that jewel is worth.The color of jewel depends on several factors such as impurity atoms, the physical properties of crystal itself etc.Transparency of Gemstone is meant that jewel sees through the ability of visible light, and is main relevant to the power of photoabsorption with jewel.In the embedding gem process, the thermostability and the chemical stability of jewel are extremely important.Usually, be extremely favourable if jewel can be heated to high temperature and not change color or react with surrounding environment.The weather resistance of jewel is decided by the mechanical property of jewel to a great extent, as cleavage, hardness, toughness etc.Because the Morse hardness of diamond and corundum is 10 and 9, still be counted as extremely precious jewel so far.The toughness of jewel is meant the broken ability of jewel opposing.Can these characteristics of all hardness, specific refractory power, color, heat/chemical stability and toughness have determined material make jewel together.
The SiC jewel has the gloss identical with diamond, the high rigidity (8.5-9.25) that is only second to diamond is than the slightly high specific refractory power of diamond (2.5-2.71), transparency height, has (0001) cleavage surface, chemical stability is good, hardly with other substance reactions, good toughness, the thermal conductivity height, therefore Heat stability is good is heated to 1400 degree and does not damage in air, be best at present diamond imitation.
The SiC jewel is a kind of material system of complexity, and basic structural unit is SiC
4Or CSi
4Tetrahedral structure belongs to close-packed structure, produces various crystal formation by the difference of unidirectional accumulation mode, and kind surplus the crystal formation that has been found that has 200 is divided into cubic structure, hexagonal structure and water chestnut square structure.Can obtain the crystal of different colours in the SiC single crystal growth process by the different elements that mix.Therefore SiC is a kind of very excellent colour jewel material.The hotchpotch of SiC has N (n type) and Al, B, Be, Ga, O, Sc, (p type) etc., because Al has superficial acceptor level, becomes the most frequently used p type hotchpotch.Chinese patent CN1093085C and CN1238813A mention, and nitrating in 6H-SiC (n type) and aluminium (p type) have obtained green and blue 6H-SiC monocrystalline respectively.The nitrogen that mixes lower concentration in 4H-SiC can obtain amber SiC monocrystalline.It is colourless that unadulterated 6H-SiC and 4H-SiC show, the 3C-SiC displaing yellow, and the 3C-SiC of nitrating shows yellow-green colour.Though these SiC have presented distinct colors, all be the monocrystalline of single homochromatic.Patent documentation about preparation SiC jewel also has Chinese patent CN1329683A and CN1554808A, but these patent documentations only relate to unicolor artificial SiC jewel.Wherein, CN1554808A has discussed the method for suitable growth major diameter 6H-SiC monocrystalline, and it is included in herein as a reference.Utilize the crystal of this technology growth to be mainly used in the microwave power device of SiC semiconductor material and the luminescent device of GaN series, as in the semiconductor lighting engineering, being mainly used in the substrate material of indigo plant, green light LED and blue laser.
Three, summary of the invention
The invention provides a kind of colored moissanite monocrystalline and preparation method thereof.
The present invention also provides a kind of preparation method of colored moissanite hard mass.
Colored moissanite monocrystalline of the present invention, it is characterized in that, this colour moissanite monocrystalline is the color fringe that contains doped element at interval in colourless moissanite monocrystalline or logical look adulterated colored moissanite monocrystalline, and the concentration of doped element wherein is enough to produce the color that naked eyes can be distinguished.
Described doped element can be selected for use and be applicable to single-crystal doped any of moissanite or more than one n type or p type hotchpotch, one of is preferably as follows or more than one: N, V, Al, B, Be, Ga, O, Sc.
Above-mentioned colored moissanite monocrystalline, color fringe width 0.1-0.5mm, color fringe spacing 1-5mm.
Preferably, the concentration of the doped element of described color fringe is 10
15/ cm
3-10
20/ cm
3
The crystal formation of described colored moissanite monocrystalline is 6H-SiC or 4H-SiC.
The preparation method of colored moissanite monocrystalline of the present invention adopts the subliming method growth, and step is as follows:
(1) seed crystal is placed the loam cake bottom of crucible, high-purity alpha-SiC powder source material or the SiC powder source material that mixes doping agent I place crucible bottom, and growth room's pressure is warmed up to 2000～2500 ℃ of temperature at 50～120mbar, and the SiC powder of bottom is decomposed into Si, SiC
2And Si
2Three kinds of main gaseous components of C are transported to the lower seed crystal face of temperature, by deposition, make crystal constantly grow.
(2) in crystal growing process, carried out a doping agent II every 5-10 hour and mix doped element concentration 10
15/ cm
3-10
20/ cm
3, the time of each doped growing is 0.5-1 hour.Doping by doping agent II forms color fringe.
Crystalline growth velocity is 100～500 μ m/h under these conditions, and through the growth of 80-100h, the background color that can obtain thickness and be 15～25mm, diameter and be the 1-3 inch is colourless or colored and moissanite monocrystalline with color fringe.
When adding doping agent I in the material of SiC powder source in the above-mentioned steps (1), doped element concentration 10
15/ cm
3-10
17/ cm
3
When adding doping agent I in the material of SiC powder source in the step (1), preferred doped element is V.
The preferred N of the described doped element of above-mentioned steps (2).
The preparation method of above-mentioned colored moissanite monocrystalline has color, crystalline structure and the doping feature of the following table of being selected from:
Table 1
| Color | The SiC crystal formation | Doped element | Doping content | Nitrating at interval | The nitrating time | Width of fringe | Fringe spacing |
| No colour band deep green striped | 6H-SiC | N | 10 19/cm 3 | 10h | 1h | 0.2mm | 2mm |
| No colour band light green striped | 6H-SiC | N | 10 15/cm 3 | 10h | 1h | 0.2mm | 2mm |
| No colour band green color stripe | 6H-SiC | N | 10 17/cm 3 | 5h | 0.5h | 0.1mm | 1mm |
| No colour band dark-brown striped | 4H-SiC | N | 10 19/cm 3 | 10h | 1h | 0.2mm | 2mm |
| Pale yellow colour band deep green | 6H-SiC | Doping I:V doped with II: N | V：10 15/cm 3 N：10 19/cm 3 | 10h | 1h | 0.2mm | 2mm |
| Deep yellow colour band light green striped | 6H-SiC | Doping I:V doped with II: N | V：10 17/cm 3 N：10 15/cm 3 | 10h | 1h | 0.2mm | 2mm |
| Yellow band green color stripe | 6H-SiC | Doping I:V doped with II: N | V：10 16/cm 3 N：10 17/cm 3 | 5h | 0.5h | 0.1mm | 1mm |
The preparation method of colored moissanite hard mass of the present invention is that above-mentioned colored moissanite monocrystalline is processed into the moissanite hard mass with color fringe through cutting, grinding and polishing.
After growing the moissanite monocrystalline with color fringe, this crystal is made jewel as the rough fellow that blank is cut into different sizes, makes colored moissanite jewel finished product through grinding and polishing then.Working method is all continued to use adamantine complete processing, and the hardness of moissanite, toughness and anisotropy make it possible to criticize facet with very sharp-pointed angle, therefore can obtain good external form and gloss, thereby reaches the height harmony of shape U.S. and matter U.S..
One of The key factor is that suitable temperature field will be arranged in the crystalline process of growth, and other influence factor also has growth pressure, seed crystal quality etc.The present invention has obtained the high-quality moissanite monocrystalline of major diameter by the optimization technique condition.
The present invention is by mixing multiple different element, preferred suitable doping content, and what finally obtained different crystal forms has a color fringe moissanite monocrystalline (specifically seeing Table 1).These colored moissanite monocrystalline have two very important universal features: (1) high rigidity; (2) high refractive index.
The moissanite finished product that the present invention makes removes to have: (1) high rigidity, and (2) high refractive index, (3) high heat conductance, (4) high chemical stability, the toughness that (5) are excellent has (6) color fringe in addition.
The moissanite monocrystalline that the present invention makes, through cut and polishing, the colored moissanite color and luster that finally obtains is rich and gaudy vivid again, and the net effect of its colourity and look brilliance can reach optimum regime.
Four, embodiment
Embodiment 1
A kind of colored moissanite monocrystalline has the deep green striped on colourless moissanite 6H-SiC monocrystalline, the width of striped is 0.2mm, and fringe spacing is 2mm.The preparation method is as follows:
Utilize the subliming method colored moissanite monocrystalline of growing, the 6H-SiC seed crystal is placed the loam cake bottom of plumbago crucible, the source material adopts the high-purity alpha-SiC powder, be placed on crucible bottom, growth room's pressure is warmed up to 2100～2500 ℃ at 50～120mbar, the SiC powder distillation of bottom is decomposed into Si, SiC
2And Si
2Main gaseous component such as C is transported to the lower seed crystal face of temperature, by deposition, makes crystal constantly grow.Feed high pure nitrogen in the process of growth, mixed once every 10 hours, doping time is 1 hour, and doping content is 10
19/ cm
3, through the growth of 100h, can obtain thickness is that 15～25mm, diameter are the moissanite monocrystalline of 2 inches no colour band deep green striped.
After according to the manufacturing procedure of diamond above-mentioned monocrystalline being cut, grinds and polishes, finally made the artificial 6H-SiC jewel of no colour band deep green striped, the width of striped is 0.2mm, and fringe spacing is 2mm.
Embodiment 2
A kind of colored moissanite monocrystalline has the light green striped on colourless moissanite 6H-SiC monocrystalline, the width of striped is 0.2mm, and fringe spacing is 2mm.
Growing method is as described in the embodiment 1, and difference is: every 10 hours nitratings once, doping time is 1 hour, and doping content is 10
15/ cm
3
The working method of hard mass is identical with embodiment 1, has finally made the artificial 6H-SiC jewel of no colour band light green striped, and the width of striped is 0.2mm, and fringe spacing is 2mm.
Embodiment 3
A kind of colored moissanite monocrystalline has green color stripe on colourless moissanite 6H-SiC monocrystalline, the width of striped is 0.1mm, and fringe spacing is 1mm.
Growing method is as described in the embodiment 1, and difference is: every 5 hours nitratings once, doping time is 0.5 hour, and doping content is 10
17/ cm
3
The working method of hard mass is identical with embodiment 1, has finally made the artificial 6H-SiC jewel of no colour band green color stripe, and the width of striped is 0.1mm, and fringe spacing is 1mm.
Embodiment 4
A kind of colored moissanite monocrystalline has the dark-brown striped on colourless moissanite 4H-SiC monocrystalline, the width of striped is 0.2mm, and fringe spacing is 2mm.The preparation method is as follows:
Utilize the subliming method colored moissanite monocrystalline of growing, the 4H-SiC seed crystal is placed the loam cake bottom of plumbago crucible, the source material adopts the high-purity alpha-SiC powder, be placed on crucible bottom, growth room's pressure is at 50～120mbar, after being warmed up to 2000～2300 ℃, the SiC powder distillation of bottom is decomposed into Si, SiC
2And Si
2Main gaseous component such as C is transported to the lower seed crystal face of temperature, by deposition, makes crystal constantly grow.Feed high pure nitrogen in the process of growth, mixed once every 10 hours, doping time is 1 hour, and doping content is 10
19/ cm
3, through the growth of 100h, can obtain thickness is that 15～25mm, diameter are the moissanite monocrystalline of 2 inches no colour band dark-brown striped.
The working method of hard mass is identical with embodiment 1, has finally made the artificial 4H-SiC jewel of no colour band dark-brown striped, and the width of striped is 0.2mm, and fringe spacing is 2mm.
Embodiment 5
A kind of colored moissanite monocrystalline has the deep green striped on lurid moissanite 6H-SiC monocrystalline, the width of striped is 0.2mm, and fringe spacing is 2mm.
Growing method is identical with embodiment 1, and difference is: mix the VC solid in the material high-purity alpha-SiC powder of source, mixing V concentration is 10
15/ cm
3, feed high pure nitrogen in the process of growth, to mix once every 10 hours, doping time is 1 hour, doping content is 10
19/ cm
3
The working method of hard mass is identical with embodiment 1, has finally made the artificial 6H-SiC jewel of pale yellow colour band deep green striped, and the width of striped is 0.2mm, and fringe spacing is 2mm.
Embodiment 6
A kind of colored moissanite monocrystalline has the light green striped on the moissanite 6H-SiC of deep yellow monocrystalline, the width of striped is 0.2mm, and fringe spacing is 2mm.
Growing method is identical with embodiment 1, and difference is: mix the VC solid in the material high-purity alpha-SiC powder of source, mixing V concentration is 10
17/ cm
3, feed high pure nitrogen in the process of growth, to mix once every 10 hours, doping time is 1 hour, doping content is 10
15/ cm
3
The working method of hard mass is identical with embodiment 1, has finally made the artificial 6H-SiC jewel of deep yellow colour band light green striped, and the width of striped is 0.2mm, and fringe spacing is 2mm.
Embodiment 7
A kind of colored moissanite monocrystalline has green color stripe on xanchromatic moissanite 6H-SiC monocrystalline, the width of striped is 0.1mm, and fringe spacing is 1mm.
Growing method is identical with embodiment 1, and difference is: mix the VC solid in the high-purity alpha-SiC powder, mixing V concentration is 10
16/ cm
3, feed high pure nitrogen in the process of growth, to mix once every 5 hours, doping time is 0.5 hour, doping content is 10
17/ cm
3
The working method of hard mass is identical with embodiment 1, has finally made the artificial 6H-SiC jewel of yellow band green color stripe, and the width of striped is 0.1mm, and fringe spacing is 1mm.
Claims (9)
1, a kind of colored moissanite monocrystalline, it is characterized in that, this colour moissanite monocrystalline is the color fringe that contains doped element at interval in colourless moissanite monocrystalline or logical look adulterated colored moissanite monocrystalline, and the concentration of doped element wherein is enough to produce the color that naked eyes can be distinguished.
2, colored moissanite monocrystalline as claimed in claim 1 is characterized in that, color fringe width 0.1-0.5mm, color fringe spacing 1-5mm.
3, colored moissanite monocrystalline as claimed in claim 1 or 2 is characterized in that, the concentration of the doped element of described color fringe is 10
15/ cm
3-10
20/ cm
3
4, the preparation method of the described colored moissanite monocrystalline of a kind of claim 1 adopts the subliming method growth, and step is as follows:
(1) seed crystal is placed the loam cake bottom of crucible, high-purity alpha-SiC powder source material or the SiC powder source material that mixes doping agent I place crucible bottom, and growth room's pressure is warmed up to 2000～2500 ℃ of temperature at 50～120mbar, and the SiC powder of bottom is decomposed into Si, SiC
2And Si
2Three kinds of main gaseous components of C are transported to the lower seed crystal face of temperature, by deposition, make crystal constantly grow;
(2) in crystal growing process, carried out a doping agent II every 5-10 hour and mix doped element concentration 10
15/ cm
3-10
20/ cm
3, the time of each doped growing is 0.5-1 hour.
5, the preparation method of colored moissanite monocrystalline as claimed in claim 4, it is characterized in that, crystalline growth velocity is 100～500 μ m/h, and through the growth of 80-100h, acquisition thickness is that 15～25mm, diameter are that the background color of 1-3 inch is colourless or colored and moissanite monocrystalline with color fringe.
6, the preparation method of colored moissanite monocrystalline as claimed in claim 4 is characterized in that, when adding doping agent I in the material of SiC powder source in the described step (1), and doped element concentration 10
15/ cm
3-10
17/ cm
3
7, the preparation method of colored moissanite monocrystalline as claimed in claim 4 is characterized in that, doped element is V when adding doping agent I in the material of SiC powder source in institute's step (1).
8, the preparation method of colored moissanite monocrystalline as claimed in claim 4 is characterized in that, the described doped element of described step (2) is N.
9, the preparation method of colored moissanite hard mass is that the moissanite hard mass with color fringe is processed in the cutting of colored moissanite monocrystalline process, grinding and the polishing of claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100154194A CN100467679C (en) | 2007-04-20 | 2007-04-20 | Chromatic carbon silicon stone monocrystal and preparation method thereof and preparation of artificial gem |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100154194A CN100467679C (en) | 2007-04-20 | 2007-04-20 | Chromatic carbon silicon stone monocrystal and preparation method thereof and preparation of artificial gem |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101037806A true CN101037806A (en) | 2007-09-19 |
| CN100467679C CN100467679C (en) | 2009-03-11 |
Family
ID=38888971
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100154194A Active CN100467679C (en) | 2007-04-20 | 2007-04-20 | Chromatic carbon silicon stone monocrystal and preparation method thereof and preparation of artificial gem |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100467679C (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103314139A (en) * | 2010-10-28 | 2013-09-18 | 格朗尼克有限责任公司 | Method for producing gemstones from silicon carbide |
| CN104018213A (en) * | 2014-05-15 | 2014-09-03 | 山东大学 | Synthetic moissanite stone of imitating tourmaline and preparation method thereof |
| CN105940149A (en) * | 2014-02-27 | 2016-09-14 | 京瓷株式会社 | Silicon carbide crystal ingot, silicon carbide wafer, and method for manufacturing silicon carbide crystal ingot and silicon carbide wafer |
| CN107976410A (en) * | 2017-12-28 | 2018-05-01 | 河北同光晶体有限公司 | A kind of method for identifying industrialization body block SiC single crystal crystal form |
| CN110042469A (en) * | 2019-04-29 | 2019-07-23 | 南通大学 | A kind of preparation method of pattern gemstones formed of silicon carbide |
| CN114164498A (en) * | 2021-02-05 | 2022-03-11 | 株式会社宝利雅 | Method for producing crystal for synthetic gem |
-
2007
- 2007-04-20 CN CNB2007100154194A patent/CN100467679C/en active Active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103314139A (en) * | 2010-10-28 | 2013-09-18 | 格朗尼克有限责任公司 | Method for producing gemstones from silicon carbide |
| CN105940149A (en) * | 2014-02-27 | 2016-09-14 | 京瓷株式会社 | Silicon carbide crystal ingot, silicon carbide wafer, and method for manufacturing silicon carbide crystal ingot and silicon carbide wafer |
| CN104018213A (en) * | 2014-05-15 | 2014-09-03 | 山东大学 | Synthetic moissanite stone of imitating tourmaline and preparation method thereof |
| CN104018213B (en) * | 2014-05-15 | 2016-11-16 | 山东大学 | A kind of synthesis of carbon-silicon stone of imitative tourmaline and preparation method thereof |
| CN107976410A (en) * | 2017-12-28 | 2018-05-01 | 河北同光晶体有限公司 | A kind of method for identifying industrialization body block SiC single crystal crystal form |
| CN107976410B (en) * | 2017-12-28 | 2021-02-02 | 河北同光晶体有限公司 | Method for identifying industrial bulk SiC single crystal form |
| CN110042469A (en) * | 2019-04-29 | 2019-07-23 | 南通大学 | A kind of preparation method of pattern gemstones formed of silicon carbide |
| CN114164498A (en) * | 2021-02-05 | 2022-03-11 | 株式会社宝利雅 | Method for producing crystal for synthetic gem |
| CN114164498B (en) * | 2021-02-05 | 2022-05-27 | 株式会社宝利雅 | Method for producing crystal for synthetic gem |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100467679C (en) | 2009-03-11 |
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