CN101035629A - Thermal control of deposition in dip pen nanolithography - Google Patents
Thermal control of deposition in dip pen nanolithography Download PDFInfo
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- CN101035629A CN101035629A CN 200580034195 CN200580034195A CN101035629A CN 101035629 A CN101035629 A CN 101035629A CN 200580034195 CN200580034195 CN 200580034195 CN 200580034195 A CN200580034195 A CN 200580034195A CN 101035629 A CN101035629 A CN 101035629A
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Abstract
The invention discloses a device applied in the nano lithography a heat control method for making the solid organic ink deposit on the base-plate from the needlepoint of the atomic microscope. The invention can be used to start and stop the ink depositing on the base-plate by the means of increasing the temperature to higher than the fluxing temperature of the ink or decreasing the temperature to lower than the fluxing temperature of the ink. The allowance of the ink deposition can be started and stopped and the deposition rate can be changed without interruption of the contact between the needlepoint and base-plate, so that the method may be useful. Uniform needle points may used for imaging without pollution. The invention allows the ink deposition in the vacuum chamber. The invention obtains a higher spatial resolution when the ink has a lower surface mobility after cooling.
Description
Interests in the 60/603rd, No. 508 U.S. Provisional Application of request of the present invention submission on August 18th, 2004 and the 10/956th, No. 596 U.S.'s non-provisional application submitting on September 29th, 2004.
Technical field
The present invention relates to a kind of apparatus and method of thermal control of the deposition that is used for dipping in a reef nanometer imprint lithography, or DPN (Dip-Pen nanometer imprint lithography and DPN are registered the trade mark into the nanometer ink).
Background technology
The ability of making quite small structure and pattern is to produce more small and the key of electronics more fast.Some up-to-date technology realized in nanometer, or 10
-9Make up structure in the yardstick of rice.One of described technology is DPN, describes in the 6th, 635, No. 311 patents of the U.S..DPN is a kind of method that molecule deposition is arrived the surface by the needle point of AFM (AFM).This method with pen is invaded in the inkwell and writes with this pen very similar, be DPN be in very small yardstick.In DPN, afm tip, or " pen " invade or are coated with and spread molecule or " ink " that needs, and begin then to contact molecular diffusion on described surface with the surface.Lines and pattern can make up by mobile needle point from the teeth outwards, and this is identical with the mode that moves pen on paper.
Yet some defectives have appearred in this technology.When using pen to write on paper, people must lift pen and write stopping.This also is the same for DPN; In order to stop deposition, afm tip must interrupt and surperficial contacting.Unfortunately, this causes the losing of record between needle point and the surface usually.The another one defective of DPN is not cause pollution when being in contact mode---under the unwanted deposit of ink situation, the needle point of being smeared can not be used for the purpose of imaging.Therefore, there is when needle point keeps with surperficial the contact demand of the equipment that can start and stop to deposit.
Except changing ink, needle point or stylus velocity, DPN further is limited, in case molecule is applied on the needle point, will produce a small amount of control to deposition.The typical molecular ink that in DPN, uses must be enough flow to transfer to enough the flowing on surface at ambient temperature from afm tip.The requirement of room temperature flowability has limited the type of the ink that can use in DPN, go up and can cause ink " to overflow " or in the diffusion of ink in case deposit to the surface, and this has limited again conversely can be with the precision of the structure of DPN structure.Because the ink that uses in DPN has necessary volatility, this method can not be implemented in a vacuum; Ink will rapid evaporation and contaminated system.Existence is to a kind of demand of better method, and the ink that use is more multiple can be implemented and consider to this method in a vacuum.Also need to control the excess diffusion of deposition and the molecule on limiting surface after the deposition with a kind of better method.
The information of the trial relevant with solving described problem can find in No. 129 patents in the U.S. the 6th, 737,646 and 6,642.Yet these two parts of lists of references all have following one or more defectives: do not have when pollution-free with the ability of contact mode imaging, do not have the ability of the deposition of starting or stoping, and in case deposition does not have the ability of the excess diffusion of control ink.For above reason, need a kind of like this method, promptly when the contact of not interrupting between needle point and the surface, start and stop the deposit of ink among the DPN.Similarly, also there be deposition and the quantity of limit ink excess diffusion or the need for equipment of surface contamination that to control ink to a kind of.
Summary of the invention
The present invention relates to a kind of heat control device, sedimentation control method and many one patterned compounds deposition method.Heat control device with feature of the present invention comprises the Temperature-controlled appliance that is operably connected to the scanning probe microscopy needle point.Described needle point can be smeared by at least a one patterned compound or ink, and Temperature-controlled appliance changes the mean temperature of the temperature of one patterned compound greater than the needle point environment.
Another aspect of the present invention provides a kind of sedimentation control method, and this method comprises the scanning probe microscopy needle point that surface or substrate is provided and is smeared by at least a one patterned compound.When the one patterned compound contacts with substrate, the temperature change of one patterned compound, so that the one patterned compound becomes and mobile maybe can not flow.At its flowing stage, this compound can deposit to the surface with the pattern of needs.The temperature of one patterned compound is changed the mean temperature greater than the needle point environment.
Another one method of the present invention provides a kind of method that is used to deposit many one patterned compound.This method comprises provides substrate and by at least two kinds of scanning probe microscopy needle points that the one patterned compound is smeared, described two kinds of one patterned compounds are smeared according to different fusion temperatures, promptly at first uses the compound of high melting temperature to smear needle point.The temperature of one patterned compound may be changed with allow to have only those have the one patterned compound that meets or exceeds immobilising-temperature of flowing deposit to the contacted substrate of one patterned compound on.
Description of drawings
Can obtain for more complete understanding of the present invention by embodiment and corresponding accompanying drawing with reference to the embodiment in the following specification.
Accompanying drawing 1 is the illustrational schematic diagram that is used for of device of the present invention.
What accompanying drawing 2 showed is that OPA deposits to the ellipsometry data on the afm tip.
Accompanying drawing 3 shows is by tDPN OPA to be write microphoto on the mica with different temperatures.
What accompanying drawing 4 showed is the friction image of the sample in the accompanying drawing 3.
Accompanying drawing 5 is three lines that tDPN writes, and writes after heating stops for wherein two.
Accompanying drawing 6 shows is the micro-image of the PDDT lines write by tDPN.
Accompanying drawing 7 shows is the micro-image of the indium lines write by tDPN.
The specific embodiment
There is imagination widely although require ink to be transferred to the surface from afm tip, the method for a kind of being called as " dry deposition effect " has been described, promptly shift and under dry situation, to take place with water meniscus for DPN.Current research about the dry deposition effect has caused how to expand seeing clearly above " wetting " ink about DPN in a large number.For instance, at high temperature (that is, approximately being the boiling point of water) deposition is possible, and in view of this, temperature can be used to control deposition.
Hot DPN (tDPN) has improvement to traditional DPN on aspect a lot.At first, can allow accurately to control and write.Deposition can be activated or stop, and deposition do not interrupt with the surface contact the time can be changed.The second, in a single day the ink of use is cooled and may has lower surface mobility, thereby can obtain higher spatial resolution.The 3rd, drawing the ground imaging by the needle point of cooling can contaminated surface.This will allow then and there deposition to be confirmed and need not to worry to pollute.At last, tDPN has expanded the scope of the ink that can be suitable for.
Described method may be utilized the one patterned compound with high melting temperature.One patterned compound with high melting temperature has low vacuum pressure usually, and compares with the compound with low fusion temperature, spreads slower.Described feature helps limiting the quantity of overflowing, and may make that carrying out this method in vacuum chamber becomes possibility.
What the present invention related at first is that the one patterned compound deposits to on-chip thermal control, covers on the needle point of scanning probe microscopy.The termination of deposition and the deposition of the time of depending on is considered in thermal control.The present invention may utilize the needle point of the scanning probe microscopy that uses in the imaging in atomic scale, for example, AFM (AFM) needle point, near-field scanning optical microscope needle point, scanning tunnelling microscope, STM needle point, and anyly have other similar equipment that can be coated with the needle point of spreading the one patterned compound, and described needle point is controlled in three dimensions with respect to substrate.The present invention also has to be enough to allow the one patterned compound never to flow to change the device that mobile being used to changes the temperature of the one patterned compound on the needle point into.In case flow, the one patterned compound can flow freely in the contact area of needle point and substrate.At flowing stage not, there is not the compound deposition.As long as the action of adopting in this method can cause the one patterned compound to deposit on the substrate, these move really that definite sequence is not crucial so.For instance, before or after changing its temperature, the one patterned compound may contact with substrate.The pattern that needs can be by obtaining with respect to the needle point mobile substrate.Single needle point can use in tDPN, and the needle point that perhaps all is coated with the massive parallel of the one patterned compound that needs may be used.If use numerous needle points, one or more needle points will be coated with spreads different one patterned compounds.
The temperature of one patterned compound changes bigger than environment temperature.This will produce tangible pattern or feature in nanoscale." environment " of needle point is the gas around the pointer tip or the bigger space of liquid, rather than only refers to the proximate portion of gas or liquid.For instance, if needle point is enclosed in the gassiness chamber, described environment is meant whole volumes of gas in the chamber.If needle point is exposed in the atmosphere, described environment is meant ambient air.When needle point is in the vacuum, can think that the mean temperature of environment is without any variation.The temperature of one patterned compound changes bigger than environment temperature, stop to write to allow the one patterned compound to cool off fast.
By changing the temperature of ink on the needle point, this form of the present invention can be used to start or stop the deposition of ink, and need not to stop ink and surperficial contacting.The embodiment of the embodiment of tDPN has been utilized the one patterned compound with high fusion temperature, is higher than 25 ℃, and usually, this one patterned compound is compared with the one patterned compound with low fusion temperature (being equal to or less than 25 ℃), and diffusion velocity is slower.Low diffusion into the surface rate has limited on-chip extension or " overflowing ".Diffusivity is low more, and the pattern of drawing with tDPN is just firm more.The basis do not have the dipping in the reef nanometer imprint lithography of thermal control because the lower diffusivity on the needle point and stop flowing of one patterned compound, low diffusion into the surface rate is unwanted.In tDPN, the diffusivity on the needle point is controlled by heating one patterned compound, consequently obtains well to flow and do not overflow.If heat one patterned compound on the needle point by the volume that adds hot-air, air also can heated substrate, and this will cause the one patterned compound to overflow the surface of substrate.Therefore, the temperature of one patterned compound is bigger than the variations in temperature of substrate.The volume that adds hot-air also can cause ink on the needle point than slow cool down, thereby causing stopping to write slows down.
Yet the one patterned compound is in on-chip bigger surface mobility if desired, and following embodiment considers these.The embodiment of the embodiment of tDPN provides the mode with the control temperature to heat or cool off substrate, therefore, and deposition patterns compound when needle point contacts with substrate.
The scanning probe microscopy needle point forms on the end of cantilever usually.When on the top that is positioned at cantilever, cantilever beams or both, the one patterned compound may be heated.When the one patterned compound is heated to or is higher than its fusion temperature (T
m) time, the one patterned compound of fusing can flow freely on the substrate.This method not only allows in room temperature or the deposition of immobilising molecule during at about 25 ℃, also allows the deposition of control molecule.Be higher than T
mTemperature high more, deposition is big more.The temperature that is not heated or is heated to when the one patterned compound is lower than T
mThe time, deposition can not take place.
The embodiment of tDPN is that the application of AFM cantilever with resistance heater of combination is solid-state ink to be deposited on 25 ℃.Cantilever can be made by any material, for example plastics, metal, pottery or its combination.If resistance heated takes place away from needle point, the heat flow that cantilever may be designed to provide enough takes place to allow deposition to the one patterned compound that is positioned on the needle point.Cantilever tip can be with the constant heat power that adds, the perhaps time dependent heat power that adds, and the short-time pulse that perhaps adds heat power is heated.The variation that needs in the heating and cooling constant of cantilever tip may change by the design that changes cantilever.A kind of form of the device of tDPN has been utilized silicon AFM cantilever, by IBMZurich Research Lab according to thermomechanical database manufacturing.The processing that the silicon of described cantilever and standard covers the cantilever on the oxide is handled and to be made up jointly, and has needle point at the end that its radius of curvature is approximately 100 nanometers.The scope that is approximately 1-20 microsecond and cool time the heat time heating time of cantilever is approximately the 1-50 microsecond.Cantilever can reach 700 ℃ when short pulse, because the resistance heated parts also are temperature sensors, the response of the scale of cantilever temperatures may be 1 ℃.
Cantilever may be smeared octadecyl phosphonic acids (OPA), and this is a kind of general molecule, can autohemagglutination be combined into the individual layer on the mica, metal, for example stainless steel and aluminium, and metal oxide, for example TiO
2And Al
2O
3Because the fusion temperature T of tDPN
mBe to be higher than 25 ℃ and in the heat rating of the resistance heater of combination, so fusion temperature T
mThe OPA that is approximately 99 ℃ is very suitable for tDPN.A kind of method that OPA is applied to needle point is by evaporation.This will be by at first being set at the scintillation vial that heat packs on 110 ℃ the electric furnace contains the OPA of about 60mg.The cap of scintillation vial is replaced with the needle point eyelid retractor and was maintained about 35 ℃ in about 30 minutes.The ellipsometry data that from accompanying drawing 2, show as can be known, this process with two kinds of OPA completely the mass equivalent of individual layer deposit on the needle point.
Another kind of suitable one patterned compound is an indium, can use in the low-temperature welding of nanoscale.This method also can form functional organic molecule, allows guiding to write manufacturing industry.The compound of deposition can form template with guiding or collection karyogenesis nanostructured.
The fusing before degraded of most of different one patterned compound, polymer for example, inorganic polymer, low T
mThe metal eutectic, or the organic molecule that in tDPN, uses.Although T
mSubordinate relation had relatedly hereinbefore, any molecule that has experienced the function with temperature that never flow to mobile transformation can be used.For example, from the solid to liquid, maybe may be enough to the transformation of deposited liquid crystal, perhaps change more low viscous liquid into from full-bodied liquid or glass.Substrate can be any size, shape or material, can revise so that stable surface texture to be provided by the one patterned compound.The embodiment of the embodiment of tDPN utilizes the mica of up-to-date generation as substrate.
Except the resistance heater of combination, much can change the temperature of the one patterned compound on the needle point, go for tDPN to allow compound never to flow to change mobile device into.An embodiment is commercially available or customizable pressure drag cantilever, and it has the internal electron resistance component, if depart from when sufficiently high voltage, will heat.Another one embodiment be can with the wide long-range electromagnetic energy source of coordinating mutually of the absorption of one patterned compound, needle point invades in the compound and is smeared, or in the absorber, can shift electromagnetic energy, receives in the one patterned compound on the needle point.The absorber of mentioning in above embodiment may be the micro-structural antenna that is positioned on the cantilever, or any absorbing material that is attached on needle point or the cantilever.Equally, unite use in being equal to or less than 25 ℃ the one patterned compound of fusion temperature, cooling-part may be used to change the temperature of one patterned compound.Cooling-part will keep the freezing of one patterned compound or not flow regime occur on the substrate up to the needs deposition.Such cooling-part can be the thermoelectron cooler or utilize the Peltier effect.Cooling-part can directly be attached on the cantilever so that the deposition of one patterned compound to be provided, and volatilizees too fast so that deposits on the DPN on basis.The use of cooling-part, the one patterned compound of volatilization will be immobilising on needle point, need up to deposition.In case the temperature of one patterned compound meets or exceeds its T
m, deposition takes place and reacts the evaporation that prevents one patterned compound subsequently with substrate.
The embodiment of the embodiment of tDPN may be used to make up three-dimensional structure.Because tDPN allows the flowability of one patterned compound can farthest to be improved at cantilever and needle point, the one patterned compound may be used to solidify and the contacting of substrate.Therefore, substrate can be established to the thickness that needs slowly, by scanning and on area identical deposition repeatedly, or be stabilized on the plane of sample and when the one patterned compound is deposited, slowly promote by keeping needle point.
The embodiment of the another one embodiment of tDPN provides deposition patterns compound in vacuum chamber.Because the volatility of necessity of the one patterned compound that in the DPN on basis, uses, the cantilever of smearing can not be placed in the vacuum of superelevation (UHV).The one patterned compound will rapid evaporation and contaminated system.By allowing to use high melting temperature T
mOne patterned compound (it must have low steam pressure), the embodiment of tDPN has been avoided such problem.Lower steam pressure means that the one patterned compound will maintain on the needle point the sufficiently long time to form pattern from the teeth outwards.Therefore the temperature gradient of the one patterned compound of control deposition will be used in vacuum chamber.In addition, therefore the one patterned compound owing to possibility scope of application broad in tDPN might use tDPN in being full of liquid or gassiness chamber.
The embodiment of the another one embodiment of tDPN allows the deposition from many one patterned compound of identical needle point.For example, if three kinds of one patterned compounds (A, B﹠amp; C) order with separately fusion temperature is applied on the needle point, and C forms first coating and T on needle point
m(A)＜T
m(B)＜T
m(C), by being organized temperature, the worker keeps below T then
m(B), has only the A deposition.Similarly, be lower than T
m(C) on the temperature, has only pattern compd A and B deposition.At T
m(C) more than the temperature, three kinds of one patterned compounds all can deposit.Must conscientiously select the solvent effect of one patterned compound to avoid to reduce fusion temperature and to promote the common deposited effect.Same embodiment can be used in the lump with pinpoint array, and wherein the one or more needle point in the array may be coated with multiple different one patterned compound.
The nanostructured that develops into based on DPN of tDPN provides multiple chance.The big array of the cantilever of heater may be fabricated, can be with more than 10
6The speed of pixel/second is write, and therefore, can obtain suitable writing time in the zone of wafer-scale.Can not reach before thermal control allows DPN miscellaneous solid ink deposition.For example, the metal of the suitable fusion temperature that forms by this technology is set up " low-temperature welding flatiron " in the nanoscale.At last, because the molecule among the tDPN can solidify in the time of 25 ℃, this polyvoltine compound pattern that may set up multilayer makes up 3-D nano, structure.
For description of the invention, following embodiment is used to illustrate specific application of the present invention.These certain embodiments are not that scope of the present invention is limited in the application of description.
The deposition of OPA---the afm tip of above describing that is coated with OPA is handled by grating with 2Hz and 128 row/scannings on 4 500 nanometer square area of mica substrate, and perhaps total scanning time is 256 seconds.For each square, the temperature of cantilever is enhanced, and finally surpasses the fusion temperature of OPA.Keep below the fusion temperature T of OPA when the temperature of needle point
mThe time, at 25 ℃ or 57 ℃, the square that can obtain to draw not.Needle tip temperature at is brought up to 98 ℃, near the fusion temperature T of OPA
mCause a small amount of deposition.This regional average height is 1.1nm, is slightly less than 1/2nd of whole numberator height.When cantilever temperatures is brought up to 122 ℃, finally can see firm deposition, the height of the square pattern of structure is 2.5nm, represents the height of whole molecule as shown in Figure 3.The frictional force imaging that is presented at the correspondence in the accompanying drawing 4 has confirmed the OPA deposition.The OPA that combines with mica is exposed in the terminal group of methyl, with the frictional force that reduces with respect to exposed mica surface.From lower cantilever temperatures, do not observe the variation of frictional force.The less deposition power of seldom reducing friction in the time of 98 ℃, just as desired, the deposition of the whole molecule power of further reducing friction in the time of 122 ℃.
Although deposition just occurs in the heating beginning, deposition still continues after heating current stops a period of time.Accompanying drawing 5 shows three lines writing by tDPN, and wherein needle point was described three vertical lines in per 1 minute in turn.Cantilever only heats first, the lines of top left.Therefore, continue deposition in the about 2 minutes time after the cantilever heating stops.For data-storage applications, the modification that is positioned at the lip-deep polymeric layer as thin as a wafer of silicon has been shown as very all to be finished near the needle point location and in the scope of 1-10 microsecond.(people such as King writes, Design of Atomic Force MicroscopeCantilevers for Combined Thermomechanical Writing and ThermalReading in Array Operation, microelectronic device system periodical the 11st volume, the 6th, No. 2002).The difference of people's such as system among the present invention and King system is that needle point is coated with the one patterned compound, and the mica substrate has the pyroconductivity more much lower than the pyroconductivity of silicon.This experiment does not show that whether ink keeps temperature on needle point, do not show that substrate is fully heated by needle point yet; Although cool time, the simple demarcation of constant surpassed～10 microseconds for cantilever, surpass～100 microseconds for needle point, surpass～10 microseconds for ink, and surpass～10 microseconds for the heating of substrate zone.Therefore, similarly, likely is that heat remaining on the substrate has prolonged and writes, and likely be that deposition stops on substrate so that bigger pyroconductivity is very fast, for example silicon or metal.The meticulous selection of substrate material and the design of writing speed can be reduced to the tDPN writing time 100Hz scope that proves in the data-storage applications.
Two features of accompanying drawing 5 show the possibility of the method that has obvious improvement lithography.At first, live width in unoptimizable system (peaked half whole width of cross-sectional area) has only the cross section of 98 nanometers, can be than the needle point radius of curvature that is suitable for ,～100 nanometers (from SEM).The needle point cantilever of heating can make up sharplyer than 20 nanometers, is labeled as 23nm little in polymer.Therefore, the advantage of needle point structure will allow the reduction by the order of magnitude live width.The second, although be assumed to be colder not accurate variation the on live width for back one lines ink.The subordinate relation of live width and temperature shows that width depends primarily on the sharp degree of needle point, rather than depends on the deposition of enclosing of the diffusion molecule of OPA.This of tDPN on the one hand and traditional tDPN form contrast, wherein the rising of spherical temperature improved deposition and since the pattern that diffusion into the surface causes subsequently along exhibition.Therefore, spherical heating can cause bigger pattern may have the bigger pollution ring of light.Therefore, the part control for heating will allow deposition and notable attribute faster.The well-designed writing feature of tDPN that will allow of cantilever, needle point and substrate is little as 10 nanometers.In the present invention, do not observe the characteristics of pollutant, for example, the ring of light around deposition characteristics or the needle point of following usefulness to smear repeat the pattern of " filling " of imaging.
Embodiment 2
Deposition one tDPN of PDDT is used to the deposit conductive of the polymer between electrode.Polymer is polyethylene (3-dodecylthiophene) PDDT, is useful for inorganic FETs semi-conducting polymer.Under the condition of nitrogen, (avoid oxidation) needle point is heated to～200 ℃.Needle point scanned another electrode from an electrode in 2 minutes then.The thickness of the lines of deposition is that 20nm and width are that 150nm and span are the wide interval of 800nm.
The deposition of indium---for the circuit of nanoscale or be used to form the repairing of the photomask of modern circuit, importantly can write small call wire.TDPN is used to form indium, lower melting point metals and common electric welding.Accompanying drawing 7 shows that stylus velocities are the series of the 3um lines write of 3um/s.Each lines shifts 64 times (that is 32 draftings ,/draw again) by the deposition needle point.Do not show that 95 ℃ and 135 ℃ two top line of writing the fuzzy lines of bottom left are drawn in the time of 156 ℃, this temperature is near 156.6 ℃ of the fusion temperatures of indium.The lines on the right, bottom are write in the time of 196 ℃, and this temperature is higher than the fusion temperature of indium, and demonstrates firm deposition in this temperature.
Being apparent that very much, all is possible according to above instruction any modification of the present invention and change.Therefore, the realization that it will be understood that the invention of asking for protection can be not limited to the description in the specification.
Claims (34)
1. heat control device, this heat control device comprises:
Can be smeared the scanning probe microscopy needle point of at least a one patterned compound; And
Be operably connected to the Temperature-controlled appliance of needle point, wherein the temperature of Temperature-controlled appliance change one patterned compound makes its mean temperature greater than the needle point environment.
2. according to the device of claim 1, wherein Temperature-controlled appliance causes the one patterned compound to change between not flowing and flowing.
3. according to the device of claim 1,
Wherein needle point is arranged in gassiness chamber; And
Wherein the temperature of Temperature-controlled appliance change one patterned compound makes it greater than the gas mean temperature in the chamber.
4. according to the device of claim 1,
In the atmosphere around wherein needle point is exposed to; And
Wherein the temperature of Temperature-controlled appliance change one patterned compound makes its mean temperature greater than atmosphere on every side.
5. according to the device of claim 1, wherein the temperature of Temperature-controlled appliance change one patterned compound makes it deposit the temperature of the substrate on it greater than the one patterned compound.
6. according to the device of claim 1, wherein Temperature-controlled appliance changes the temperature of the substrate that contacts with the one patterned compound.
7. according to the device of claim 1, wherein the one patterned compound is the octadecyl phosphonic acids.
8. according to the device of claim 1, wherein the one patterned compound is a 10-carbene base trichlorine siloxanes.
9. according to the device of claim 1, wherein needle point forms on the end of cantilever and Temperature-controlled appliance is the piezoresistive components that is attached in the cantilever.
10. according to the device of claim 1, wherein needle point forms on the end of cantilever and Temperature-controlled appliance is the resistance component that is attached in the cantilever.
11. according to the device of claim 1, wherein Temperature-controlled appliance is long-range electromagnetic energy source.
12. according to the device of claim 11, its medium-long range electromagnetic energy source is coordinated mutually with the absorption band of one patterned compound.
13. according to the device of claim 11, its medium-long range electromagnetic energy source is coordinated mutually with the absorption band of needle point.
14. according to the device of claim 11, its medium-long range electromagnetic energy source is coordinated mutually with the absorption band of absorber on being operably connected to needle point.
15. according to the device of claim 1, wherein needle point is the cooling-part that is arranged in cantilever at the end formation and the Temperature-controlled appliance of cantilever.
16. according to the device of claim 15, wherein cooling-part has utilized the Peltier effect.
17. according to the device of claim 15, wherein cooling-part is the thermoelectron cooler.
18. a sedimentation control method, the action that this method comprises has:
Substrate is provided;
The scanning probe microscopy that is coated with at least a one patterned compound needle point is provided;
The one patterned compound is contacted with substrate;
The temperature that changes the one patterned compound is to allow the conversion between not flowing and flowing of one patterned compound;
Wherein the temperature of one patterned compound is changed the mean temperature greater than the needle point environment; And
The one patterned compound that allow to flow need quantity with the design transfer of needs to substrate.
19. according to the method for claim 18, wherein substrate is that mica and one patterned compound are the octadecyl phosphonic acids.
20. according to the method for claim 18, wherein the one patterned compound is a 10-carbene base trichlorine siloxanes.
21. according to the method for claim 18, the wherein action that contacts with substrate of one patterned compound, the action and allowing that changes the temperature of one patterned compound need the one patterned compound of quantity to transfer to on-chip action to carry out in vacuum chamber.
22. according to the method for claim 18, the wherein action that contacts with substrate of one patterned compound, the action and allowing that changes the temperature of one patterned compound need the one patterned compound of quantity to transfer to on-chip action to carry out in being full of the chamber of liquid.
23. according to the method for claim 18, the wherein action that contacts with substrate of one patterned compound, the action and allowing that changes the temperature of one patterned compound need the one patterned compound of quantity to transfer to on-chip action to carry out in gassiness chamber.
24. according to the method for claim 18, wherein the one patterned compound has and is higher than about 25 ℃ fusion temperature.
25. according to the method for claim 18, wherein the fusion temperature of one patterned compound is less than or equal to about 25 ℃.
26. according to the method for claim 18, the action that wherein changes the temperature of one patterned compound changes the temperature of substrate when being included in and contacting with the one patterned compound.
27. according to the method for claim 18, the action that wherein changes the temperature of one patterned compound comprises the application of the parts that are selected from the group of being made up of piezoresistive components, resistance component, electromagnetic energy source and cooling-part.
28., further comprise allowing the one patterned compound to be based upon on the substrate action with the thickness that arrives needs according to the method for claim 18.
29. according to the method for claim 28, wherein allowing the one patterned compound to be based upon on the substrate with the action that arrives the thickness that needs is that same area by the multiple scanning substrate realizes.
30. according to the method for claim 28, wherein allowing the one patterned compound to be based upon on the substrate with the action that arrives the thickness that needs is by because the one patterned compound keeps the stablizing of needle point on the substrate plane to realize when being deposited the distance that increases between needle point and the substrate.
31., wherein provide the action of scanning probe microscopy needle point to comprise numerous needle points that are coated with the one patterned compound be provided according to the method for claim 18.
32. according to the method for claim 18, wherein provide the action of scanning probe microscopy needle point to comprise numerous needle points are provided, wherein at least one needle point is coated with different one patterned compounds.
33. a method that is used to deposit many one patterned compound, the action that this method comprises has: substrate is provided;
Provide to be coated with at least two kinds of scanning probe microscopy needle points with one patterned compound of different fusion temperatures, the one patterned compound forms coating with the order of separately fusion temperature, and the one patterned compound with the highest fusion temperature forms first coating;
The one patterned compound is contacted with substrate;
The temperature that changes the one patterned compound is to allow one of one patterned compound conversion between not flowing and flowing at least;
The one patterned compound that allow to flow need quantity with the design transfer of needs to substrate;
The one patterned compound that wherein has only transition temperature to meet or exceed is deposited.
34., wherein provide the action of scanning probe microscopy needle point to comprise numerous needle points that are coated with the one patterned compound of at least two kinds of needs be provided according to the method for claim 33.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US60351804P | 2004-08-18 | 2004-08-18 | |
| US60/603,518 | 2004-08-18 | ||
| US10/956,596 | 2004-09-29 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102013210A (en) * | 2009-08-27 | 2011-04-13 | 施乐公司 | An apparatus for indicating temperature of an object |
| CN104495744A (en) * | 2014-12-16 | 2015-04-08 | 中国科学院上海应用物理研究所 | Method of directly implementing dip-pen nanolithography on hydrophobic substrate |
| CN111812357A (en) * | 2020-07-10 | 2020-10-23 | 浙江大学 | Self-filling three-arm type thermal scanning probe for micro-nano manufacturing |
-
2005
- 2005-05-10 CN CN 200580034195 patent/CN101035629A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102013210A (en) * | 2009-08-27 | 2011-04-13 | 施乐公司 | An apparatus for indicating temperature of an object |
| CN102013210B (en) * | 2009-08-27 | 2014-01-29 | 施乐公司 | An apparatus for indicating temperature of an object |
| CN104495744A (en) * | 2014-12-16 | 2015-04-08 | 中国科学院上海应用物理研究所 | Method of directly implementing dip-pen nanolithography on hydrophobic substrate |
| CN111812357A (en) * | 2020-07-10 | 2020-10-23 | 浙江大学 | Self-filling three-arm type thermal scanning probe for micro-nano manufacturing |
| CN111812357B (en) * | 2020-07-10 | 2021-05-25 | 浙江大学 | Self-filling three-arm type thermal scanning probe for micro-nano manufacturing |
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