CN101034724A - Making method for silicon slice surface metal pole and notch digger - Google Patents
Making method for silicon slice surface metal pole and notch digger Download PDFInfo
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- CN101034724A CN101034724A CNA2007100893001A CN200710089300A CN101034724A CN 101034724 A CN101034724 A CN 101034724A CN A2007100893001 A CNA2007100893001 A CN A2007100893001A CN 200710089300 A CN200710089300 A CN 200710089300A CN 101034724 A CN101034724 A CN 101034724A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to a manufacture method of silicon chip surface metal electrode. Must fixes the needed silicon on the print table-top, first according to the depth which needs cuts the silicon chip surface natural oxide layer of the silicon chip surface to form the trench, then fills the printing electrode pulp in the trench, finally agglutinates the silicon chip to form the reliable micro alloy in the printing electrode pulp and the silicon surface, thus forms the superficial electrode with a good ohmic contact. The special-purpose notcher includes handgrip, the before and after the front of handgrip setup a cone-shape out liquid spout and cleaver, the out liquid spout connects with the notcher pulp channel. The out liquid spout is made of stainless steel submillimetre tubule. Using the invention manufacture silicon chip surface metal electrode, has simple craft, litter material consume, and high production efficiency.
Description
Technical field
The invention belongs to the materials processing technology field, particularly a kind of silicon chip surface metal electrode manufacture method.
Background technology
For increasing the ray effect of solar cell, light receiving surface is often made matte, therefore how to make the surface of good electrode at rough silicon wafer suede and just seems especially important.What the making electrode mainly adopted at present is screen printing technique, promptly slurry is coated on solar cell surface with printing machinery, form very thin parallel silver-colored line electrode, its method is: with ultra-fine high fine silver, aluminium is base metal, be equipped with quantitative assistant then and make paste, form the printing slurry, adopt the upper/lower electrode of printing machinery printing silicon solar cell, sintering under suitable temperature and atmosphere, metallic clinkering in the slurry forms the crossings on different level network structure, form microalloy with silicon face, thereby form ohmic contact with silicon.There is following problem in above traditional handicraft: when silk screen was made by stainless steel material, resilience force was approximately zero, easily breaks after being hit, and can not restore after the depression; Because stainless moisture absorption is zero, adopts a straight-choice specimen of calligraphy film difficulty; Tension force is big when stretching tight net, viscosity gum is required high; The very coarse silicon chip printing in incompatible surface, in printing process because of silicon chip surface coarse or perk easily cause breaking of silicon chip and or electrode discontinuous.
Summary of the invention
The object of the invention is to provide silicon chip surface metal electrode manufacture method and the notcher that a kind of technology is simple, material consumption is few, production efficiency is high.
For reaching above-mentioned purpose, the present invention adopts following technical scheme: silicon chip surface metal electrode manufacture method, the silicon chip that will make electrode is fixed on the printing table top, earlier as required the degree of depth is scratched the silicon chip surface natural oxidizing layer and is formed groove on silicon chip surface, printing slurry landfill is gone in the groove, last sintering silicon chip makes printing slurry and silicon face form firm microalloy, thereby forms the good Ohmic contact surface electrode.
By the combination of many covers grout outlet and chopper and the scribing track of conversion chopper, can realize the electrode effect of various decorative patterns.
Between notcher and the silicon chip pressure sensor is set, makes chopper slightly scratch oxide layer to p type layer (n type solar cell) or n type layer (p type solar cell).
According to the needed printing raster width of silicon chip parameter, on same silicon chip, slurry is slotted, fills out simultaneously to several notchers side by side.
Notcher is established the lever of slurry passage in comprising, the taper pulp mouth of pipe and chopper, grout outlet and notcher slurry channel connection are set before and after below the lever.
Anterior front and back are provided with the taper pulp mouth of pipe and chopper below the lever.
Grout outlet is made with stainless steel submillimeter tubule.
Grout outlet on the notcher is made with stainless steel submillimeter tubule because stainless steel has good intensity and resistance to wear, and have organic solvent-resistant, the acid and alkali-resistance characteristic is good, long-term do not have aging, an oxidative phenomena; Stainless steel moisture content under any temperature is zero simultaneously, and moisture absorption is zero, does not have water-swellable, softening, flows out smoothly in grout outlet so can guarantee slurry.During notcher chopper fluting, slightly scratch oxide layer to p type layer (n type solar cell) or n type layer (p type solar cell).Pressure between notcher and the silicon chip is adjusted pressure sensor according to actual needs to certain numerical value, chopper is drawn less than p-n junction, distance between the V-type groove that makes the pulp mouth of pipe simultaneously and leave is suitable, guarantee that slurry flow in the V-type groove of leaving, have excellent contact with silicon chip, improve printing quality.According to the needs of making electrode technology, notcher and grout outlet can work independently: scratch oxide layer separately to p type layer (n type solar cell) or n type layer (p type solar cell) with the notcher chopper earlier, and then fill slurry separately by grout outlet.
The flow velocity of slurry can be controlled by the pressure of slurry container in the grout outlet, to guarantee thickness and the uniformity of slurry in groove.When notcher is slotted,, the pressure of corresponding slurry container is set according to the speed of notcher fluting on matte.The speed of service of notcher chopper fluting is fast, and the pressure of corresponding slurry container is big, and the flow velocity of slurry in grout outlet will increase; The speed of notcher chopper fluting is slow, and the pressure of corresponding slurry container is little, and the flow velocity of slurry in grout outlet will reduce.
The inventive method has on silicon wafer suede to be imbedded slurry in notcher chopper fluting and the groove and carries out stage and asynchronous carrying out the stage synchronously.According to the speed of distance between the pulp mouth of pipe and the notcher chopper and notcher fluting, determine that the pulp mouth of pipe flows out the time started and the dwell time of slurry.When the notcher chopper began to slot, the pulp mouth of pipe did not have slurry and flows out; When the notcher fluting carries out a segment distance, when the pulp mouth of pipe touches silicon V-groove, slurry container is exerted pressure, the pulp mouth of pipe flows out slurry, be the notcher chopper and the pulp mouth of pipe all on silicon wafer suede the time, the notcher fluting and the pulp mouth of pipe imbed that slurry carries out synchronously in the groove; When the notcher chopper left silicon chip, chopper was not slotted, and the pulp mouth of pipe still in the silicon chip fluting, continues cross-notching and fills slurry; When the pulp mouth of pipe was about to leave silicon wafer suede, slurry stopped to flow out, and finishes to fill slurry.
On same silicon chip, several notchers can carry out work simultaneously.According to the needed printing raster width of silicon chip parameter, several notcher spacing parallel arrangings are installed on the guider.The force value of the pressure sensor between notcher and the silicon chip is arranged to the identical value of actual needs, and slurry container is exerted pressure simultaneously, and slurry is flowed out from the pulp mouth of pipe, is embedded to side by side in the V-type groove.Also can be according to actual needs by adjusting the electrode effect that spacing between the notcher realize various decorative patterns, chase after dog line, hyperbola electrode shape etc. such as printing, be used for the improved electrode grid.For improving backplate material and the different cell panel deformation perks that cause of cell panel stress distribution that surface thickness distributes and causes, can change backplate, all be printed as shank type etc.
The invention provides a kind of brand-new free silicon wafer suede printing process, can adapt to the very coarse silicon chip printing in surface, and can be because of silicon chip surface coarse or perk cause breaking of in printing process silicon chip; Because the pulp mouth of pipe flows out the speed-controllable system of slurry, it is discontinuous can not to produce electrode, can form firm microalloy with silicon face, thereby forms good Ohmic contact; Silicon wafer suede is slotted and is imbedded slurry and carry out synchronously, and technology is simple, the production efficiency height, and material consumption is few; In the process of printing electrode, be independently between each notcher, regulate the electrode effect that its spacing can be realized various decorative patterns; Pressure between pressure sensor control notcher and the silicon chip is arranged, guaranteed that chopper scratches oxide layer and can not scratch the p-n junction of silicon chip, has improved printing quality.
Description of drawings
Fig. 1 is the notcher structural representation;
The notcher structural representation that Fig. 2 shows for partial cutaway;
Fig. 3 is that notcher is made the electrode process schematic diagram at free silicon wafer suede.
Wherein, 1-notcher lever, 2-grout outlet, 3-chopper, 4-slurry passage, 6-silicon dioxide layer, 7-n type layer, 8-p type layer, the slurry that 9-imbeds, 10-V type groove, 11-silicon wafer suede, 12-slurry container.
Embodiment
Silicon chip surface metal electrode manufacture method may further comprise the steps:
1, the silicon chip that will print is fixed on the positioning table, sets the force value of pressure sensor between silicon chip and the notcher.
2, mobile notcher just contacts the surface of chopper and silicon chip to the upper surface place of silicon chip.
3, operation notcher makes the motion of notcher along continuous straight runs, and chopper is slotted to silicon chip, and slurry container is exerted pressure, and makes the pulp mouth of pipe flow out slurry, and the fluting of carrying out on silicon wafer suede fills the slurry operation.
4, rise notcher, move it the initial position before the work, take off the silicon chip of the slurry of substituting the bad for the good, carry out sintering, make it and silicon chip forms good Ohmic contact from positioning table.
In the above-mentioned implementation step, get the sample silicon chip that has matte, the one side with matte is made progress, another side is fixed on the fixture, guarantees that silicon chip can not move arbitrarily in the printing process.According to the thickness of detected silicon dioxide, the force value of pressure sensor is set, guarantee that the matte of chopper and silicon chip has excellent contact, can scratch oxide layer in the silicon chip, the V-type groove that the chopper of notcher is left enters p type layer or n type layer, but can not scratch the formed p-n junction of silicon chip; Simultaneously grout outlet keeps suitable distance with the V-type groove, in the V-type groove that slurry is flow into leave, and the assurance printing quality.
In the above-mentioned implementation step, slurry container 12 is applied certain pressure, slurry flows in the grout outlet grout outlet is full of, but slurry is flowed out in the pulp mouth of pipe.Start guider, notcher is moved on the matte 11 of silicon chip, the chopper 3 of notcher is positioned at an end of silicon chip, according to the force value of pressure sensor, guarantees that the matte of chopper and silicon chip contacts well.When notcher began to slot, chopper scratched matte, and by silicon dioxide layer, the chopper point enters into p type layer or n type layer, marks the V-type groove, and grout outlet keeps slurry not flow out.When the notcher pulp mouth of pipe runs to V-type groove top, see also figure (3), slurry container 12 to be exerted pressure, slurry flows out from the pulp mouth of pipe, imbeds in the V-type groove.
In above-mentioned steps, when grout outlet fills slurry to V-type groove end, reduce the pressure of slurry container, grout outlet stops slurry, rises notcher, makes the initial position before notcher is got back to work; Take off the silicon chip of the slurry of substituting the bad for the good then from positioning table, it is carried out sintering, make slurry and silicon chip form good Ohmic contact.
The serial resistance of solar cell is made up of resistance, metal-semiconductor contact resistance, emitter region sheet resistance and the base resistance etc. of metal electrode, and the metal-semiconductor contact resistance is one of series resistance important component part.Adopt the about 1.45 Ω cm of polycrystalline silicon solar cell series impedance of actual measurement
2, silicon chip is the casting polycrystalline silicon sheet of resistivity 0.95～1.3 Ω cm, uses the present invention and made silver electrode on polysilicon solar cell, the resistivity of silver electrode is about 7 * 10
-7Ω cm, electrode size is: long 20mm, wide 0.20mm carries out sintering in temperature is 760 ℃ chain-type sintering furnace.Thickness behind the electrode printing sintering curing is about 10 μ m.Measure to such an extent that contact resistance is 0.0097 Ω cm
2, it is negligible comparing with series impedance, the process conditions that the silicon chip surface metal electrode is made can satisfy the requirement of solar cell.
Claims (7)
1, silicon chip surface metal electrode manufacture method, it is characterized in that, the silicon chip that will make electrode is fixed on the printing table top, earlier as required the degree of depth is scratched the silicon chip surface natural oxidizing layer and is formed groove on silicon chip surface, printing slurry landfill is gone in the groove, last sintering silicon chip makes printing slurry and silicon face form firm microalloy, thereby forms the good Ohmic contact surface electrode.
2, silicon chip surface metal electrode manufacture method according to claim 1 is characterized in that, by the combination of many covers grout outlet and chopper and the scribing track of conversion chopper, can realize the electrode effect of various decorative patterns.
3, silicon chip surface metal electrode manufacture method according to claim 1 and 2, it is characterized in that, between notcher and the silicon chip pressure sensor is set, makes chopper slightly scratch oxide layer to p type layer (n type solar cell) or n type layer (p type solar cell).
4, silicon chip surface metal electrode manufacture method according to claim 3 is characterized in that, according to the needed printing raster width of silicon chip parameter, on same silicon chip, slurry is slotted, fills out simultaneously to several notchers side by side.
5, notcher is characterized in that, establishes the lever of slurry passage in comprising, the taper pulp mouth of pipe and chopper, grout outlet and notcher slurry channel connection is set before and after below the lever.
6, notcher according to claim 5 is characterized in that, the taper pulp mouth of pipe and chopper is set before and after anterior below the lever.
According to claim 5 or 6 described notchers, it is characterized in that 7, grout outlet is made with stainless steel submillimeter tubule.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100893001A CN100426534C (en) | 2006-12-31 | 2007-03-20 | Making method for silicon slice surface metal pole and notch digger |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610160045.0 | 2006-12-31 | ||
| CN200610160045 | 2006-12-31 | ||
| CNB2007100893001A CN100426534C (en) | 2006-12-31 | 2007-03-20 | Making method for silicon slice surface metal pole and notch digger |
Publications (2)
| Publication Number | Publication Date |
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| CN101034724A true CN101034724A (en) | 2007-09-12 |
| CN100426534C CN100426534C (en) | 2008-10-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2007100893001A Expired - Fee Related CN100426534C (en) | 2006-12-31 | 2007-03-20 | Making method for silicon slice surface metal pole and notch digger |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110421968A (en) * | 2019-08-09 | 2019-11-08 | 协鑫集成科技股份有限公司 | The printing equipment and electrode preparation system of solar battery electrode slurry |
| CN111250863A (en) * | 2020-03-31 | 2020-06-09 | 格物感知（深圳）科技有限公司 | Special aluminum-free welding bonding process |
| US11355584B2 (en) | 2008-04-14 | 2022-06-07 | Advanced Silicon Group Technologies, Llc | Process for fabricating silicon nanostructures |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61241981A (en) * | 1985-04-19 | 1986-10-28 | Teijin Ltd | Manufacture of thin film solar battery |
| US4745078A (en) * | 1986-01-30 | 1988-05-17 | Siemens Aktiengesellschaft | Method for integrated series connection of thin film solar cells |
| JP3017422B2 (en) * | 1995-09-11 | 2000-03-06 | キヤノン株式会社 | Photovoltaic element array and manufacturing method thereof |
| CN1241040A (en) * | 1998-07-04 | 2000-01-12 | 周庆明 | Method for manufacturing solar cells of amorphous silicon |
| JP3838979B2 (en) * | 2001-03-19 | 2006-10-25 | 信越半導体株式会社 | Solar cell |
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- 2007-03-20 CN CNB2007100893001A patent/CN100426534C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11355584B2 (en) | 2008-04-14 | 2022-06-07 | Advanced Silicon Group Technologies, Llc | Process for fabricating silicon nanostructures |
| CN110421968A (en) * | 2019-08-09 | 2019-11-08 | 协鑫集成科技股份有限公司 | The printing equipment and electrode preparation system of solar battery electrode slurry |
| CN110421968B (en) * | 2019-08-09 | 2020-12-08 | 协鑫集成科技股份有限公司 | Printing device for solar cell electrode paste and electrode preparation system |
| CN111250863A (en) * | 2020-03-31 | 2020-06-09 | 格物感知（深圳）科技有限公司 | Special aluminum-free welding bonding process |
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| CN100426534C (en) | 2008-10-15 |
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