CN101021659B - Liquid crystal picture element and producing method thereof and liquid crystal display device - Google Patents
Liquid crystal picture element and producing method thereof and liquid crystal display device Download PDFInfo
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- CN101021659B CN101021659B CN200710078769A CN200710078769A CN101021659B CN 101021659 B CN101021659 B CN 101021659B CN 200710078769 A CN200710078769 A CN 200710078769A CN 200710078769 A CN200710078769 A CN 200710078769A CN 101021659 B CN101021659 B CN 101021659B
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Abstract
The invention provides a liquid crystal pixel and the making method and LCD thereof. And the liquid crystal pixel comprises a data line, a doped polycrystalline layer and a shielding metal layer, where the doped polycrystalline silicon layer is located under the data line and the vertical projection of the polycrystalline silicon layer does not overlap the data line; the shielding metal layer is located between the data line and the doped polycrystalline silicon layer and form a storage capacitor together with the polycrystalline silicon layer. In addition, the invention also provides a liquid crystal pixel making method, which stores video data by the store capacitor and can not cause burden to the data line but can avoid possible parasitical capacitor between the pixel electrode and the data line.
Description
Technical field
The invention relates to the liquid crystal pixel field, and be particularly to a kind of liquid crystal pixel and manufacture method and LCD that reduces data line load in the liquid crystal panel.
Background technology
In recent years, because the fast development of LCD, and have many advantages such as in light weight, low power consumption and zero radiation, therefore be widely used in various electronic products.In general active-matrix LCD, liquid crystal pixel is configured to array-like, and by active members such as thin film transistor (TFT)s, controls the action of each liquid crystal pixel.
Please refer to Fig. 1, it illustrates the synoptic diagram of array of display in the available liquid crystal display.Array of display 100 comprises several scanning linears 102 and several data lines 104, and scanning linear 102 is staggered to form a plurality of pixel regions 106 with data line 104.Each pixel region 106 is made of two plate bases and the liquid crystal molecule sealed up for safekeeping between substrate, and a substrate wherein has pixel electrode, and another substrate then has common electrode.Be positioned at the common electrode of the pixel region 106 of same column, its current potential is controlled by a common electrode line 108.
For Thin Film Transistor-LCD (TFT-LCD), it applies voltage with each other thin film transistor (TFT) to corresponding pixel electrode, the potential difference (PD) that is provided between the pixel electrode and common electrode on two plate bases is provided, decide the crystalline axis direction of liquid crystal molecule, make local liquid crystal present printing opacity or lighttight situation.
Generally speaking, form stray capacitances, the both sides of pixel region 106 can be designed to usually not and data line 104 overlaids, but so, but may produce the situation of light leak between pixel region 106 and the data line 104 for fear of pixel region 106 and data line 104.So, can cover metal level 110 in the configuration of the both sides of pixel region 106, use and block issuable light leak situation between pixel region 106 and the data line 104.
Please refer to Fig. 2, it illustrates the cut-open view of A1-A2 part among Fig. 1.The below that doped polysilicon layer 200 is positioned at data line 104 and covers metal level 110, and projection in vertical direction and data line 104 and to cover metal level 110 overlapping.Is connected with common electrode wire 108 among Fig. 1 owing to cover metal level 110, and projection in vertical direction and doped polysilicon layer 200 are overlapping, so understand because of coupling effect with doped polysilicon layer 200 and to form storage capacitors Cst.In addition, because it is also overlapping with data line 104 to cover metal level 110 projection in vertical direction, therefore also can form storage capacitors (not illustrating) with data line 104.Yet this is by doped polysilicon layer 200 and data line 104 formed unnecessary storage capacitors, also can current sinking when liquid crystal pixel operate, thereby data line 104 caused extra load burden.
Therefore, need a kind of liquid crystal pixel, can reduce the burden of data line, and have storage capacitors simultaneously with temporal data.
Summary of the invention
The object of the present invention is to provide a kind of liquid crystal pixel and manufacture method thereof and LCD to overcome the defective of prior art.
According to one embodiment of the invention, a kind of liquid crystal pixel is proposed.This liquid crystal pixel comprises a data line; One doped polysilicon layer is positioned at described data line below, and the projection in vertical direction of wherein said doped polysilicon layer is not overlapping with described data line; And one first cover metal level, between described data line and described doped polysilicon layer, and forms a storage capacitors with described doped polysilicon layer; One second covers metal level, wherein said first covers metal level and described second covers the both sides, below that metal level lays respectively at described data line, and described first covers metal level and described second and cover metal level projection in vertical direction and partly be overlapped in described data line respectively; Described second cover metal level projection in vertical direction not with described doped polycrystalline silicon ply; And a common electrode line, wherein said first covers metal level is connected with described common electrode wire, and described second covers metal level and be not connected with described common electrode wire.
According to another embodiment of the present invention, a kind of liquid crystal pixel is proposed.This liquid crystal pixel comprises a substrate; One doped polysilicon layer is formed on the described substrate; One grid oxic horizon is formed on the described substrate and covers described doped polysilicon layer; One first covers metal level, be formed on the described grid oxic horizon, and described first covers metal level and described doped polysilicon layer forms a storage capacitors; One inner layer dielectric layer is formed on the described grid oxic horizon and covers described first and covers metal level; One data line is formed on the described inner layer dielectric layer, and the projection in vertical direction of described data line not with described doped polycrystalline silicon ply; One protective seam is formed on the described inner layer dielectric layer and covers described data line.One second covers metal level, be formed on the described grid oxic horizon, and described second cover metal level projection in vertical direction not with described doped polycrystalline silicon ply, and described first cover metal level and described second and cover metal level projection in vertical direction and partly be overlapped in described data line respectively; One common electrode line, wherein said first covers metal level is connected with described common electrode wire, and described second covers metal level and be not connected with described common electrode wire.
According to another embodiment of the present invention, a kind of LCD is proposed, comprise described liquid crystal pixel.
According to further embodiment of this invention, a kind of manufacture method of liquid crystal pixel is proposed.The method comprises formation one doped polysilicon layer on a substrate; Form a grid oxic horizon on described substrate and cover described doped polysilicon layer; Form one first and cover metal level on described grid oxic horizon, make described first to cover metal level and described doped polysilicon layer forms a storage capacitors; Form an inner layer dielectric layer on described grid oxic horizon and cover described first and cover metal level; Form a data line on described inner layer dielectric layer, make the projection in vertical direction of described data line not with described doped polycrystalline silicon ply; And form a protective seam on described inner layer dielectric layer and cover described data line; Form one second and cover metal level on described grid oxic horizon, and covered by described inner layer dielectric layer, and described second cover metal level projection in vertical direction not with described doped polycrystalline silicon ply, described first covers metal level and described second covers metal level projection in vertical direction and partly is overlapped in described data line respectively; Form a common electrode line, make described first to cover metal level and be connected, and described second covers metal level and be not connected with described common electrode wire with described common electrode wire.
Liquid crystal pixel of the present invention stores image data by the storage capacitors of covering the formation of metal level and doped polysilicon layer, and can not cause the burden of data line, and the stray capacitance that can avoid pixel electrode and data line to form.
Description of drawings
Fig. 1 illustrates the synoptic diagram of array of display in the available liquid crystal display;
Fig. 2 illustrates the cut-open view of A1-A2 part among Fig. 1;
Fig. 3 illustrates the synoptic diagram according to array of display in the LCD of one embodiment of the invention;
Fig. 4 illustrates the cut-open view of B1-B2 part among Fig. 3;
Fig. 5 illustrates the process flow diagram according to the liquid crystal pixel manufacture method of one embodiment of the invention.
The main element symbol description:
100,300: array of display 200,412: doped polysilicon layer
102,302: scanning linear 306a, 306b: pixel electrode
104,304: data line 400: substrate
106,306: pixel region 410: grid oxic horizon
108,308: common electrode wire 420: inner layer dielectric layer
110,312,314: cover metal level 430: protective seam
Step: 502～514
Embodiment
Please refer to Fig. 3, it illustrates the synoptic diagram according to array of display in the LCD of one embodiment of the invention.Array of display 300 comprises several scanning linears 302 and several data lines 304, and scanning linear 302 is staggered to form a plurality of pixel regions 306 with data line 304.The current potential of the common electrode of each row pixel region 306 is controlled with a common electrode line 308.In addition, the both sides of each pixel region 306 also include covers metal level 312 and 314, wherein covers metal level 312 and is connected with common electrode wire 308, is not connected with common electrode wire 308 and cover metal level 314.
Please refer to Fig. 4, it illustrates the cut-open view of B1-B2 part among Fig. 3.This liquid crystal pixel comprises data line 304, a doped polysilicon layer 412 and covers metal level 312.Doped polysilicon layer 412 is positioned at data line 304 belows, and projection in vertical direction is not overlapping with data line 304.Cover 312 of metal levels between data line 304 and doped polysilicon layer 412, and form a storage capacitors Cst with doped polysilicon layer 412.
On the other hand, this liquid crystal pixel also comprises a substrate 400, a grid oxic horizon 410, an inner layer dielectric layer 420 and a protective seam 430.Doped polysilicon layer 412 is formed on the substrate 400, and grid oxic horizon 410 also is formed on the substrate 400, and covers doped polysilicon layer 412.Inner layer dielectric layer 420 and cover metal level 312 and all be positioned on the grid oxic horizon 410, and inner layer dielectric layer 420 overlay masking metal levels 312 wherein cover metal level 312 and form storage capacitors Cst with doped polysilicon layer 412.In addition, protective seam 430 and data line 304 are positioned on the inner layer dielectric layer 420, and protective seam 430 cover data lines 304, and wherein data line 304 projection in vertical direction is not overlapping with doped polysilicon layer 412.
In addition, inner layer dielectric layer 420 is overlay masking metal level 314 also, and it is not overlapping with doped polysilicon layer 412 to cover metal level 314 projection in vertical direction, also, can not form storage capacitors with doped polysilicon layer 412.Wherein, cover metal level 312 and cover the both sides, below that metal level 314 lays respectively at data line 304, and projection in vertical direction partly is overlapped in data line 304 respectively.
In addition; on protective seam 430, also comprise pixel electrode 306a and 306b in the pixel region 306; wherein pixel electrode 306a projection in vertical direction with cover metal level 312 and overlap; but it is not overlapping with data line 304; pixel electrode 306b projection is in vertical direction then overlapped with covering metal level 314, but not overlapping with data line 304.
Fig. 5 illustrates the process flow diagram according to the liquid crystal pixel manufacture method of one embodiment of the invention, and please refer to Fig. 4 and Fig. 5.In step 502, on substrate 400, form doped polysilicon layer 412 earlier, wherein the ion that is mixed in the doped polysilicon layer 412 can be provided by N type or P type alloy.Then in step 504, on substrate 400, form grid oxic horizon 410 to cover doped polysilicon layer 412.In the step 506 that continues, form and cover metal level 312 on grid oxic horizon 410, make that covering metal level 312 forms storage capacitors Cst with doped polysilicon layer 412.Moreover in step 508, formation inner layer dielectric layer 420 is covered in and covers on metal level 312 and the grid oxic horizon 410, and the material that wherein forms inner layer dielectric layer 420 can be dielectric materials such as silicon nitride or monox.Then, in step 510, form data line 304 on inner layer dielectric layer 420 again, make data line 304 projection in vertical direction not overlapping with doped polysilicon layer 412.In step 512, form protective seam 430 and be covered on data line 304 and the inner layer dielectric layer 420 afterwards.At last in step 514; form pixel electrode 306a and 306b again on protective seam 430; make pixel electrode 306a projection in vertical direction with cover metal level 312 and overlap; but it is not overlapping with data line 304; and pixel electrode 306b projection in vertical direction with cover metal level 314 and overlap; but not overlapping with data line 304, to finish the making of liquid crystal pixel.Wherein, the material of formation pixel electrode 306a and 306b comprises as tin indium oxide transparent conductivity materials such as (ITO).
In step 506, can cover metal level 312 on grid oxic horizon 410 time in formation, form another and cover metal level 314 on grid oxic horizon 410.Wherein, forming the material cover metal level 312 and 314 can comprise that molybdenum, chromium or tungsten-molybdenum alloy etc. have and cover and the material of conductive characteristic.It is not overlapping with doped polysilicon layer 412 to cover metal level 314 projection in vertical direction,, can not form storage capacitors Cst with doped polysilicon layer 412 yet.And, cover metal level 312 and cover metal level 314 projection in vertical direction, partly be overlapped in data line 304 respectively.
In addition, the method also comprises formation one common electrode line, makes that covering metal level 312 is connected with common electrode wire, is not connected with common electrode wire and cover metal level 314.
Thus, just can store image data with the storage capacitors Cst that doped polysilicon layer 412 forms, and can not cause the burden of data line 304 by covering metal level 312.In addition, because two pixel electrode 306a and 306b are all not overlapping with data line 304, so the stray capacitance that also can avoid two pixel electrode 306a and 306b and data line 304 to form.
Though the present invention discloses as above with embodiment; right its is not in order to limit the present invention, to have in any affiliated technical field and know the knowledgeable usually, without departing from the spirit and scope of the present invention; when can doing various changes and retouching, so protection scope of the present invention is when being as the criterion with the claim scope.
Claims (8)
1. a liquid crystal pixel is characterized in that, described liquid crystal pixel comprises:
One data line;
One doped polysilicon layer is positioned at described data line below, and the projection in vertical direction of wherein said doped polysilicon layer is not overlapping with described data line; And
One first covers metal level, between described data line and described doped polysilicon layer, and forms a storage capacitors with described doped polysilicon layer;
One second covers metal level, wherein said first covers metal level and described second covers the both sides, below that metal level lays respectively at described data line, and described first covers metal level and described second and cover metal level projection in vertical direction and partly be overlapped in described data line respectively;
Described second cover metal level projection in vertical direction not with described doped polycrystalline silicon ply; And
One common electrode line, wherein said first covers metal level is connected with described common electrode wire, and described second covers metal level and be not connected with described common electrode wire.
2. liquid crystal pixel according to claim 1 is characterized in that, described liquid crystal pixel also comprises:
One first pixel electrode is positioned at described data line top, and the projection and described first in vertical direction of wherein said first pixel electrode is covered metal level and overlapped, but not overlapping with described data line; And
One second pixel electrode is positioned at described data line top, and the projection and described second in vertical direction of wherein said second pixel electrode is covered metal level and overlapped, but not overlapping with described data line.
3. a LCD is characterized in that, described LCD comprises claim 1 or 2 described liquid crystal pixels.
4. a liquid crystal pixel is characterized in that, described liquid crystal pixel comprises:
One substrate;
One doped polysilicon layer is formed on the described substrate;
One grid oxic horizon is formed on the described substrate and covers described doped polysilicon layer;
One first covers metal level, be formed on the described grid oxic horizon, and described first covers metal level and described doped polysilicon layer forms a storage capacitors;
One inner layer dielectric layer is formed on the described grid oxic horizon and covers described first and covers metal level;
One data line is formed on the described inner layer dielectric layer, and the projection in vertical direction of described data line not with described doped polycrystalline silicon ply; One protective seam is formed on the described inner layer dielectric layer and covers described data line;
One second covers metal level, be formed on the described grid oxic horizon, and described second cover metal level projection in vertical direction not with described doped polycrystalline silicon ply, and described first cover metal level and described second and cover metal level projection in vertical direction and partly be overlapped in described data line respectively;
One common electrode line, wherein said first covers metal level is connected with described common electrode wire, and described second covers metal level and be not connected with described common electrode wire.
5. liquid crystal pixel according to claim 4 is characterized in that, described liquid crystal pixel also comprises:
One first pixel electrode is positioned on the described protective seam, and the projection and described first in vertical direction of wherein said first pixel electrode is covered metal level and overlapped, but not overlapping with described data line; And
One second pixel electrode is positioned on the described protective seam, and the projection and described second in vertical direction of wherein said second pixel electrode is covered metal level and overlapped, but not overlapping with described data line.
6. a LCD is characterized in that, described LCD comprises claim 4 or 5 described liquid crystal pixels.
7. the manufacture method of a liquid crystal pixel is characterized in that, described method comprises:
Form a doped polysilicon layer on a substrate;
Form a grid oxic horizon on described substrate and cover described doped polysilicon layer;
Form one first and cover metal level on described grid oxic horizon, make described first to cover metal level and described doped polysilicon layer forms a storage capacitors;
Form an inner layer dielectric layer on described grid oxic horizon and cover described first and cover metal level;
Form a data line on described inner layer dielectric layer, make the projection in vertical direction of described data line not with described doped polycrystalline silicon ply; And
Form a protective seam on described inner layer dielectric layer and cover described data line;
Form one second and cover metal level on described grid oxic horizon, and covered by described inner layer dielectric layer, and described second cover metal level projection in vertical direction not with described doped polycrystalline silicon ply, described first covers metal level and described second covers metal level projection in vertical direction and partly is overlapped in described data line respectively;
Form a common electrode line, make described first to cover metal level and be connected, and described second covers metal level and be not connected with described common electrode wire with described common electrode wire.
8. manufacture method according to claim 7 is characterized in that, described method also comprises:
Form one first pixel electrode on described protective seam, make the projection and described first in vertical direction of described first pixel electrode cover metal level and overlap, but not overlapping with described data line; And
Form one second pixel electrode on described protective seam, make the projection and described second in vertical direction of described second pixel electrode cover metal level and overlap, but not overlapping with described data line.
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| CN200710078769A CN101021659B (en) | 2007-02-26 | 2007-02-26 | Liquid crystal picture element and producing method thereof and liquid crystal display device |
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| US7956438B2 (en) * | 2008-11-21 | 2011-06-07 | Xilinx, Inc. | Integrated capacitor with interlinked lateral fins |
| CN102236222B (en) * | 2010-04-23 | 2013-07-10 | 北京京东方光电科技有限公司 | Array substrate and manufacturing method thereof and liquid crystal display |
| CN103268047B (en) * | 2012-12-31 | 2015-12-09 | 厦门天马微电子有限公司 | A kind of LTPS array base palte and manufacture method thereof |
| CN104658898A (en) * | 2013-11-22 | 2015-05-27 | 上海和辉光电有限公司 | Method for manufacturing low-temperature polycrystalline silicon film |
| TWI649603B (en) * | 2016-04-27 | 2019-02-01 | 友達光電股份有限公司 | Pixel structure, display panel and curved display device |
| CN106773394B (en) * | 2016-10-14 | 2024-04-09 | 合肥京东方光电科技有限公司 | Array substrate, display panel and display device |
| CN109742092B (en) | 2019-01-14 | 2021-12-10 | 京东方科技集团股份有限公司 | Organic light-emitting diode display substrate, manufacturing method and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1485655A (en) * | 2002-09-23 | 2004-03-31 | 统宝光电股份有限公司 | Pixel arrangement of the thin film transistor LCD |
| CN1677206A (en) * | 2004-03-30 | 2005-10-05 | Lg.菲利浦Lcd株式会社 | Liquid crystal display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1485655A (en) * | 2002-09-23 | 2004-03-31 | 统宝光电股份有限公司 | Pixel arrangement of the thin film transistor LCD |
| CN1677206A (en) * | 2004-03-30 | 2005-10-05 | Lg.菲利浦Lcd株式会社 | Liquid crystal display device |
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