CN101013911A - Control circuit of radio-frequency variable gain amplifier and gain control method - Google Patents
Control circuit of radio-frequency variable gain amplifier and gain control method Download PDFInfo
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Abstract
The invention discloses one radio variable gains amplifier control circuit, which comprises strip conductive unit, gains control unit, load unit, wherein, the input voltage signals are orderly through strip conductive unit, gains control unit and load unit to output gains control voltage signals. The invention also discloses one gains control method, which comprises the following steps: a, through conductive unit switching gains and converting the voltage signals into current signals; b, current signals is through gains control unit for control; c, through load unit converting the current signals into voltage one.
Description
Technical field
The present invention relates to variable gain control field, relate in particular to a kind of RF variable gain amplifier (VGA, Variable Gain Amplifier) control circuit and gain control method of wireless communication transmitter.
Background technology
Along with the progress of wireless communication technique, wireless telecommunication system is controlled power, also is that the requirement of gain control range improves day by day.For realizing gain control function, wireless communication transmitter generally uses the VGA control circuit, so that adjustable gain to be provided.
The method of existing realization gain control function has two kinds usually:
A) the VGA control circuit is integrated in baseband portion.The advantage of this method is: the frequency of baseband signal is low, realizes that the gain controlling ratio is easier to; Gain controlling and gain stepping are accurate; Circuit is simple; Power consumption is little.Shortcoming is: the carrier leak of the transmission channel of whole transmitter is serious, needs the complicated adjustment circuit of design to reduce carrier leak.
B) the VGA control circuit is integrated in radio frequency part.The advantage of this method is: carrier leak is fixed value, and satisfies the requirement of carrier of transmitter leakage parameters, has avoided serious carrier leak.Shortcoming is: the variable gain control circuit complexity of radio frequency part; Gain controlling and gain stepping inaccuracy; The gain control range of one-level circuit is little, need the multi-level pmultistage circuit series connection to realize, thereby power consumption is big, poor linearity.
At present, wireless communication transmitter generally with two kinds of methods in conjunction with utilization, its typical structure block diagram is as shown in Figure 1.Wireless communication transmitter comprises baseband filter and VGA control circuit module 1 at least, work in baseband portion, baseband signal I, Q to input make filtering and gain controlling, can accurately adjust gain and gain stepping, realize the fine tuning of gain, the gain control range of its fine tuning requires decision by the system parameters of carrier leak; Quadrature divider 8 is used for the local oscillation signal A of input is made two divided-frequency; IQ quadrature modulation upconverter 2 is used for the output signal of baseband filter and VGA control circuit module 1 and the output signal of quadrature divider 8 are done mixing, up-converts to radiofrequency signal by baseband signal; Radio frequency VGA control circuit 3 works in radio frequency part, can adjust gain control range and gain stepping roughly; Radio-frequency filter 4 is band pass filters, on the frequency band of appointment the output signal of radio frequency VGA control circuit 3 is done filtering; Power amplifier 5 is used for the output signal rate of doing work of radio-frequency filter 4 is amplified; Duplexer 6 and antenna 7 are used to switch receiving mode or sending mode.
The gain control range of existing one-level radio frequency VGA control circuit 3 generally is no more than 20dB, and multistage gain stepping can't be provided.Therefore, for reaching the gain control range demand of wireless telecommunication system, need series multistage radio frequency VGA control circuit 3, cause the power consumption of wireless telecommunication system big, the linearity is low.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of radio frequency VGA control circuit and gain control method of wireless communication transmitter, the gain control range that realizes the one-level circuit is greater than 40dB, and provide certain gain stepping, do not need plural serial stage again, thereby reduced the power consumption of wireless telecommunication system, improved the linearity.
The present invention is achieved by the following technical solutions: a kind of RF variable gain amplifier control circuit, it is characterized in that, and comprise the transconductance stage unit at least, make high low gain by the control of first control signal and switch, the voltage signal of importing is converted to current signal; Gain control unit by the control of second control signal, provides gain control range and gain stepping; Load unit is converted to voltage signal output with current signal, input voltage signal successively after transconductance stage unit, gain control unit and load unit are handled, the voltage signal after the output gain control.
Further, described first control signal realizes the switching of high low gain by switching different mutual conductances.
Further, described first control signal is turning on and off of current source.
Further, described second control signal is a digital controlled signal.
Further, described gain control unit is formed the digital controlled signal complementation of the grid of above-mentioned two transistor array by the corresponding identical transistor array of two packet sizes.
Further, the transistorized size of each in the described transistor array is 2 exponential growth successively, and wherein, index adds 1 successively since 0.
Further, described transistor array is made up of five transistors, and the size of establishing the first transistor is K, and then other four transistorized sizes are 2K, 4K, 8K, 16K successively.
Further, described RF variable gain amplifier control circuit is the differential topology structure.
Another technical scheme of the present invention is a kind of gain control method of RF variable gain amplifier, may further comprise the steps:
A1, do gain through the transconductance stage unit and switch, and the voltage signal of input is converted to current signal;
A2, current signal are made gain controlling through gain control unit;
A3, current signal is converted to voltage signal through load unit.
Further, described transconductance stage unit is made up of different mutual conductances, by switching mutual conductance, realizes the switching of high low gain.
Further, described gain control unit is formed the digital controlled signal complementation of the grid of above-mentioned two transistor array by the corresponding identical transistor array of two packet sizes.
Further, the transistorized size of each in the described transistor array is 2 exponential growth successively, and wherein, index adds 1 successively since 0.
Further, described transistor array is made up of five transistors, and the size of establishing the first transistor is K, and then other four transistorized sizes are 2K, 4K, 8K, 16K successively.
Further, the control circuit of described RF variable gain amplifier is the differential topology structure.
The present invention can provide the gain control range of 10dB～20dB by the switching of the height gain-state of transconductance stage unit; Simultaneously, gain control unit can also provide gain control range and the gain stepping much larger than 20dB.Therefore, whole radio frequency VGA control circuit can provide greater than the gain control range of 40db and certain gain stepping.Because the gain control range of one-level circuit can be greater than 40db, thus do not need series multistage radio frequency VGA control circuit again, thus can greatly reduce the power consumption of wireless telecommunication system, and promote its linearity.
Description of drawings
Fig. 1 is the structured flowchart of typical wireless communication system transmitters;
Fig. 2 is the theory diagram of radio frequency VGA control circuit of the present invention;
Fig. 3 is the flow chart of the gain control method of radio frequency VGA of the present invention;
Fig. 4 is the radio frequency VGA control circuit figure of specific embodiments of the invention;
Fig. 5 is the circuit diagram of the gain control unit of specific embodiments of the invention;
Fig. 6 is the gain control range of specific embodiments of the invention and the resolution chart of gain stepping;
Fig. 7 is the structured flowchart of the transmitter channels of TD-SCDMA bimodulus rf chip.
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is described in detail.
Fig. 2 is the theory diagram of radio frequency VGA control circuit of the present invention.Radio frequency VGA control circuit of the present invention comprises transconductance stage unit, gain control unit and load unit at least.From the voltage signal B input radio frequency VGA control circuit of IQ quadrature modulation upconverter output, also promptly import the transconductance stage unit.Described voltage signal B changes current signal C into through the transconductance stage unit.Mutual conductance GM1 or mutual conductance GM2 can be selected by control signal D1 in described transconductance stage unit, if GM1＞GM2, realize the switching of high low gain by switching mutual conductance, select mutual conductance GM1 or mutual conductance GM2 to differ 10dB～20dB, the gain control range of 10dB～20dB also promptly is provided.Simultaneously, realizing gain controlling by switching mutual conductance, also is the size of power controlling.Radio frequency VGA control circuit is under low gain mode (selecting mutual conductance GM2), and operating current is little, can reduce the power consumption of wireless communication system.
Described current signal C input gain control unit.Described gain control unit can provide gain control range and gain stepping greater than 20db by control signal D2 regulation and control.Behind the current signal input gain control unit, shunt.One part of current signal input exchange signal ground, for example direct voltage; The one part of current signal inputs to load unit, and current signal C1 is transformed into voltage signal B2, drives back one-level circuit.Wherein, the shunting ratio of current signal is regulated and control by control signal D2.For example, if the current ratio on the current signal of input signal channel and input exchange signal ground is 1: 1, then the output of radio frequency VGA control circuit is than the low 6dB of spiking output; If current ratio is 1: 3, then low 12dB; If current ratio is 1: 7, then low 18dB, by that analogy.Gain control unit carries out stepping to gain to be regulated, and the gain control range greater than 20dB is provided.
By above analysis as can be known, the flow process of the gain control method of radio frequency VGA of the present invention may further comprise the steps as shown in Figure 3:
By switch the gain control range that the height gain-state obtains in the transconductance stage unit, and the gain control range that provides of gain control unit, both sums are the overall gain control range of whole radio frequency VGA control circuit, as from the foregoing, this overall gain control range is greater than 40db.And the gain stepping that gain control unit provides is the gain stepping of whole VGA control circuit.
Fig. 4 is the radio frequency VGA control circuit figure of specific embodiments of the invention.This specific embodiment is used the differential topology structural circuit, and circuit is the left-right symmetric structure.Specific embodiments of the invention are made up of transconductance stage unit, gain control unit, load unit.
As shown in Figure 4, described transconductance stage unit comprises mutual conductance GM1, is made up of transistor M1, transistor M2 and resistance R 1; Mutual conductance GM2 is made up of transistor M3, transistor M4 and resistance R 2; Current source I1, current source I2, current source I3, current source I4.Wherein, current source I1, current source I2 are respectively transistor M1, transistor M2 provides operating current, and by current source I1, the connection of current source I2, shutoff, enable or forbid mutual conductance GM1; Current source I3, current source I4 are respectively transistor M3, transistor M4 provides operating current, and by current source I3, the connection of current source I4, shutoff, enable or forbid mutual conductance GM2.
The input of radio frequency VGA control circuit also is the voltage signal that is input as one group of complementation of transconductance stage unit, is respectively positive voltage Inp, negative voltage Inn.Voltage signal difference input transistors M1, the transistor M2 of above-mentioned complementation and the grid of transistor M3, transistor M4.Form mutual conductance GM1 by transistor M1, transistor M2 and resistance R 1, link resistance R 1 between the source electrode of transistor M1, transistor M2, the source electrode of transistor M1, transistor M2 also links the end of current source I1, current source I2 separately, and the other end of current source is ground connection all.Transistor M3, transistor M4 and resistance R 2 are formed mutual conductance GM2, link resistance R 2 between the source electrode of transistor M3, transistor M4, and the source electrode of transistor M3, transistor M4 also links the end of current source I3, current source I4 separately, and the other end of current source is ground connection all.Mutual conductance GM1, mutual conductance GM2 are used for changing voltage signal into current signal, establish Gm1＞Gm2.Under high gain mode, current source I3, current source I4 turn-off, and mutual conductance GM2 is deactivated, and the electric current that mutual conductance GM1 produces is by the drain electrode input transistors M5 of transistor M1, transistor M2, the source electrode of transistor M6; Under low gain mode, current source I1, current source I2 turn-off, and mutual conductance GM1 is deactivated, and the electric current that mutual conductance GM2 produces is by the drain electrode input transistors M5 of transistor M3, transistor M4, the source electrode of transistor M6.The transconductance stage unit also is connection, the shutoff of current source by control signal, switches mutual conductance GM1 and mutual conductance GM2, realizes the switching of high low gain, and the gain control range of 10db～20dB is provided.
Described load unit comprises inductance L 1, inductance L 2, capacitor C 1, capacitor C 2, the input impedance that forms resonant network and back one-level circuit jointly together, as the load of radio frequency VGA control circuit.Described load unit is used for current signal is converted to voltage signal, by output Outp, Outn output, drives back one-level circuit.Output Outp, Outn are connected to coupling capacitance C3, coupling capacitance C4 separately, are used to exclude the direct current signal of output.
Fig. 5 is the circuit diagram of the gain control unit of specific embodiments of the invention.Described gain control unit comprises a group transistor array, and the digital controlled signal of its grid is respectively K1～K5; Another group transistor array, the digital controlled signal of its grid is respectively K1b～K5b.Wherein, digital controlled signal is provided by baseband portion.K1b～K5b gets the inverse value of K1～K5.Digital controlled signal is the drain electrode of the transistor array of the K1b～K5b pin two that is connected in parallel, and digital controlled signal is the drain electrode of the K1～K5 pin one that is connected in parallel, the source electrode of the described two transistor array pin 3 that is connected in parallel.
See also Fig. 4 and Fig. 5, K1～K5 and K1b～K5b are the digital controlled signals of one group of complementation, also are the control signal D2 of Fig. 2 indication.Current signal one tunnel after the shunting connects power end VDD, and one the tunnel connects output Outp, the Outn of radio frequency VGA control circuit.Digital controlled signal is that the size of the transistor array of K1～K5 and the transistor array that digital controlled signal is K1b～K5b is respectively 1,2,4,8,16 times of transistor M5.In this specific embodiment, the transistorized size in the transistor array is 2 exponential growth successively, and wherein, index adds 1 successively since 0.Certainly, gain control unit of the present invention be not limited to 2 exponential, transistorized size multiple can be selected according to required gain control range that reaches and gain stepping.
By control figure signal K1～K5, can realize the gain control range of 30dB and the gain stepping of 6dB.Wherein, transistor M5 is driven by voltage Vg, and its size is consistent with transistorized minimum dimension in the transistor array.
Because this specific embodiment is used the differential topology structural circuit, then the gain control unit with left side among Fig. 4 is an example, and concrete implementation procedure is introduced:
B1) if K5K4K3K2K1=00000 because K5bK4bK3bK2bK1b gets the inverse value of K5K4K3K2K1, then K5bK4bK3bK2bK1b=11111.At this moment, the transistor size of connection output Outp is 1 times M5; The transistor size that is connected to power end VDD be the M5 size (16+8+4+2+1) doubly, be 31 times M5, thus, the voltage signal of output Outp is 1/32 of a maximum producible voltage signal;
B2) if K5K4K3K2K1=00001, then K5bK4bK3bK2bK1b=11110.At this moment, the transistor size that connects output Outp is 2 times M5, the transistor size that is connected to power end VDD be the M5 size (16+8+4+2) doubly, be 30 times M5, thus, the voltage signal of output Outp is 1/16 of a maximum producible voltage signal;
B3) if K5K4K3K2K1=00011, then K5bK4bK3bK2bK1b=11100.At this moment, the transistor size that meets output Outp in succession is 4 times M5, the transistor size that is connected to power end VDD be the M5 size (16+8+4) doubly, be 28 times M5, thus, the voltage signal of output Outp is 1/8 of a maximum producible voltage signal;
B4) if K5K4K3K2K1=00111, then K5bK4bK3bK2bK1b=11000.At this moment, the transistor size that meets output Outp in succession is 8 times M5, the transistor size that is connected to power end VDD be the M5 size (16+8) doubly, be 24 times M5, thus, the voltage signal of output Outp is 1/4 of a maximum producible voltage signal;
B5) if K5K4K3K2K1=01111, then K5bK4bK3bK2bK1b=10000.At this moment, the transistor size that meets output Outp in succession is 16 times M5, and the transistor size that is connected to power end VDD is 16 times of M5 size, is 16 times M5, and thus, the voltage signal of output Outp is 1/2 of a maximum producible voltage signal;
B6) if K5K4K3K2K1=11111, then K5bK4bK3bK2bK1b=00000.At this moment, the transistor size that meets output Outp in succession is 32 times M5, and thus, the voltage signal of output Outp is maximum producible voltage signal.
Because 1 times of the every increase of current signal, gain then increases 6dB, and therefore, the gain control unit of this specific embodiment has been realized gain stepping 6dB, gain control range 30dB.Certainly, the present invention is not limited to the gain stepping that only realizes 6dB, gets 0 or get 1 according to K1～K5, can realize different gain steppings.For example, the gain stepping is 3dB etc.Similarly, the present invention is not limited to the gain control range that only realizes 30db, and the quantity of transistor array and size all can influence gain control range, and this gain control range can be greater than 30db.
The radio frequency VGA control circuit of this specific embodiment is by switching the mutual conductance GM1 and the mutual conductance GM2 of transconductance stage unit, the gain control range of 10dB～20dB can be provided, add the gain control range of about 30dB that gain control unit provides, the one-level radio frequency VGA control circuit of this specific embodiment can be realized the gain control range greater than 40dB, and the gain stepping of about 6dB is provided simultaneously.
Fig. 6 is the VGA gain control range of this specific embodiment and the resolution chart of gain stepping.As shown in the figure, gain control range is 2.54-(38.6)=41.14db, can realize the control range greater than 40dB.The gain step value is respectively 2.54-(4.3)=6.84db; (4.3)-(9.59)=5.29db; (9.59)-(15.27)=5.68db; (15.27)-(20.98)=5.71db; (20.98)-(26.63)=5.65db; (26.63)-(33.6)=6.97db; (-33.6-)-(38.6)=5db, averaging to get 5.87db, the theoretical value of the gain stepping of this specific embodiment is 6db, but since the error of side circuit make this value that certain deviation be arranged, but approximate 6db.
Specific embodiments of the invention are the differential topology structural circuit, but the present invention is not limited thereto, and single-ended circuit is suitable equally.In addition, the present invention also is not limited to integrated circuit (IC) design, and discrete circuit is suitable for too.
Adopt the radio frequency VGA control circuit of principle of the invention design to can be applicable to TD-SCDMA bimodulus rf chip.This chip adopts 0.18um CMOS technological design, and the block diagram of its transmitter channels as shown in Figure 7.Baseband modulation signal is through after the filtering, and the input quad upconverter converts rf modulated signal to; Input radio frequency VGA control circuit also is that signal power is controlled to gain; After the input driving amplifier increased driving force, the power amplifier that chip for driving is outer also was a power amplifier.
Certainly, the present invention is application success in TD-SCDMA bimodulus rf chip, but the present invention is not limited thereto, and the present invention also can be widely used in other Wireless/wired communication systems, for example WCDMA, CDMA2000, GSM/EDGE, cordless telephone, WLAN (wireless local area network), fibre system etc.
The above is preferred embodiment of the present invention only, is not limited to the present invention.Within the spirit and principles in the present invention several, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (14)
1, a kind of RF variable gain amplifier control circuit is characterized in that, comprises at least
The transconductance stage unit is made high low gain by the control of first control signal and is switched, and the voltage signal of importing is converted to current signal;
Gain control unit by the control of second control signal, provides gain control range and gain stepping;
Load unit is converted to voltage signal output with current signal,
Input voltage signal successively after transconductance stage unit, gain control unit and load unit are handled, the voltage signal after the output gain control.
2, RF variable gain amplifier control circuit as claimed in claim 1 is characterized in that, described first control signal realizes the switching of high low gain by switching different mutual conductances.
3, RF variable gain amplifier control circuit as claimed in claim 1 or 2 is characterized in that, described first control signal is turning on and off of current source.
4, RF variable gain amplifier control circuit as claimed in claim 1 is characterized in that, described second control signal is a digital controlled signal.
As claim 1 or 4 described RF variable gain amplifier control circuits, it is characterized in that 5, described gain control unit is formed the digital controlled signal complementation of the grid of above-mentioned two transistor array by the corresponding identical transistor array of two packet sizes.
6, RF variable gain amplifier control circuit as claimed in claim 5 is characterized in that, the transistorized size of each in the described transistor array is 2 exponential growth successively, and wherein, index adds 1 successively since 0.
7, RF variable gain amplifier control circuit as claimed in claim 5 is characterized in that, described transistor array is made up of five transistors, and the size of establishing the first transistor is K, and then other four transistorized sizes are 2K, 4K, 8K, 16K successively.
8, as claim 1 or 7 described RF variable gain amplifier control circuits, it is characterized in that described RF variable gain amplifier control circuit is the differential topology structure.
9, a kind of gain control method of RF variable gain amplifier is characterized in that, may further comprise the steps:
A1, do gain through the transconductance stage unit and switch, and the voltage signal of input is converted to current signal;
A2, current signal are made gain controlling through gain control unit;
A3, current signal is converted to voltage signal through load unit.
10, the gain control method of RF variable gain amplifier as claimed in claim 9 is characterized in that, described transconductance stage unit is made up of different mutual conductances, by switching mutual conductance, realizes the switching of high low gain.
11, as the gain control method of claim 9 or 10 described RF variable gain amplifiers, it is characterized in that, described gain control unit is formed the digital controlled signal complementation of the grid of above-mentioned two transistor array by the corresponding identical transistor array of two packet sizes.
12, the gain control method of RF variable gain amplifier as claimed in claim 11 is characterized in that, the transistorized size of each in the described transistor array is 2 exponential growth successively, and wherein, index adds 1 successively since 0.
13, as the gain control method of claim 11 described RF variable gain amplifier, it is characterized in that, described transistor array is made up of five transistors, and the size of establishing the first transistor is K, and then other four transistorized sizes are 2K, 4K, 8K, 16K successively.
As the gain control method of claim 9 or 13 described RF variable gain amplifiers, it is characterized in that 14, the control circuit of described RF variable gain amplifier is the differential topology structure.
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| CN101350605B (en) * | 2008-09-12 | 2011-09-28 | 东南大学 | Improved bipolar type variable gain amplifier with minimum gain control |
| CN102291814A (en) * | 2011-04-25 | 2011-12-21 | 上海信朴臻微电子有限公司 | Radio frequency (RF) automatic gain control (AGC) system and method thereof |
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| JP2990147B2 (en) * | 1998-02-20 | 1999-12-13 | 日本電気アイシーマイコンシステム株式会社 | Variable gain amplifier circuit |
| CN100486112C (en) * | 2004-02-24 | 2009-05-06 | 络达科技股份有限公司 | Gain control circuit and relevant gain amplifier |
| WO2006013893A1 (en) * | 2004-08-03 | 2006-02-09 | Nippon Telegraph And Telephone Corporation | Transimpedance amplifier |
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| CN101350605B (en) * | 2008-09-12 | 2011-09-28 | 东南大学 | Improved bipolar type variable gain amplifier with minimum gain control |
| CN102064773B (en) * | 2009-11-16 | 2013-09-11 | 杭州士兰微电子股份有限公司 | Adjustable gain low noise amplifier |
| CN101995900B (en) * | 2010-10-13 | 2014-07-02 | 苏州科山微电子科技有限公司 | Gradient voltage generator used for continuous variable gain amplifier |
| CN101995900A (en) * | 2010-10-13 | 2011-03-30 | 苏州科山微电子科技有限公司 | Gradient voltage generator used for continuous variable gain amplifier |
| CN102291814A (en) * | 2011-04-25 | 2011-12-21 | 上海信朴臻微电子有限公司 | Radio frequency (RF) automatic gain control (AGC) system and method thereof |
| CN103095229A (en) * | 2013-01-22 | 2013-05-08 | 北京安迈泽成科技有限公司 | Radio frequency power amplifier |
| CN103095229B (en) * | 2013-01-22 | 2016-04-06 | 宜确半导体（苏州）有限公司 | Radio-frequency power amplifier |
| CN106603067A (en) * | 2017-01-10 | 2017-04-26 | 深圳市华讯方舟微电子科技有限公司 | Orthogonal input divide-by-2 frequency divider |
| CN109787574A (en) * | 2018-12-29 | 2019-05-21 | 南京汇君半导体科技有限公司 | A kind of millimeter wave variable gain amplifier structure |
| CN110197042A (en) * | 2019-06-10 | 2019-09-03 | 智汇芯联(厦门)微电子有限公司 | Wideband low noise amplification system and its design method with High Gain Feedback loop |
| CN110197042B (en) * | 2019-06-10 | 2023-12-22 | 智汇芯联(厦门)微电子有限公司 | Broadband low-noise amplification system with high-gain feedback loop and design method thereof |
| CN111628730A (en) * | 2020-05-09 | 2020-09-04 | 上海华虹宏力半导体制造有限公司 | Current multiplexing variable gain low noise amplifier |
| CN111628730B (en) * | 2020-05-09 | 2023-08-18 | 上海华虹宏力半导体制造有限公司 | Current multiplexing variable gain low noise amplifier |
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