CN101012566A - Silicon electrolyzation - Google Patents

Silicon electrolyzation Download PDF

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Publication number
CN101012566A
CN101012566A CN 200610166373 CN200610166373A CN101012566A CN 101012566 A CN101012566 A CN 101012566A CN 200610166373 CN200610166373 CN 200610166373 CN 200610166373 A CN200610166373 A CN 200610166373A CN 101012566 A CN101012566 A CN 101012566A
Authority
CN
China
Prior art keywords
silicon
chlorine
carry out
purity
tetrachloride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN 200610166373
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Chinese (zh)
Inventor
杨贻方
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CN 200610166373 priority Critical patent/CN101012566A/en
Publication of CN101012566A publication Critical patent/CN101012566A/en
Pending legal-status Critical Current

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Abstract

The invention discloses an extracting method of high-purity silicon, which comprises the following steps: heating quartz sand and coke in the electric furnace to make rough silicon; reacting rough silicon and chlorine; distilling; obtaining pure silicon chloride; electrolyzing silicon chloride to obtain high-purity silicon and chlorine.

Description

Silicon electrolyzation
Technical field
The present invention relates to a kind of metallurgical technology, especially the process for extracting of HIGH-PURITY SILICON.
Background technology
Present HIGH-PURITY SILICON is to adopt Siemens Method substantially, by electric arc preliminary purification to 98%, by being made into the chemical gas trichlorosilane, re-using hydrogen and reduces then.It is huge that this mode consumes electric power, and output all has considerable restraint, and production cost is high.
Summary of the invention
Task of the present invention is to design the method for purification of silicon economic, that energy consumption is little.
The present invention adopts quartz sand, coke heat-flash in electric furnace to make thick silicon, then makes thick silicon with chlorine reaction, makes purer silicon tetrachloride through distillation again, carries out electrolysis then and can obtain HIGH-PURITY SILICON and chlorine in pure carbon tetrachloride solution.
Adopt gasification purification and electrolysis to separate out, cost for purification is reduced significantly.
Embodiment
In concrete the making, at first quartz sand is opened wide burn off impurity, be sealed in 1750 degrees centigrade of fusions again and carry out preliminary purification, obtain liquid silicon-dioxide at 1650 degrees centigrade, obtain thick silicon with the reaction of an amount of coke then, make thick silicon under liquid state, obtain silicon tetrachloride with the high-temperature chlorine solid/liquid/gas reactions.
Then silicon tetrachloride being carried out the physics distillation purifies.
After obtaining pure silicon tetrachloride, also can adopt hydrogen reducing, can not add solution and under the sealing situation, directly carry out refining.
In the electrolytic process, can adopt 13~14 volts direct current to carry out electrolysis.

Claims (3)

1. the process for extracting of a HIGH-PURITY SILICON, it is characterized in that adopting quartz sand, coke heat-flash in electric furnace to make thick silicon, then make thick silicon with chlorine reaction, make purer silicon tetrachloride through distillation again, in pure carbon tetrachloride solution, carry out electrolysis then and can obtain HIGH-PURITY SILICON and chlorine.
2. according to claim 1, it is characterized in that silicon tetrachloride does not add solution and directly carry out refining under the sealing situation.
3. according to claim 1, it is characterized in that adopting 13~14 volts direct current to carry out electrolysis.
CN 200610166373 2006-12-25 2006-12-25 Silicon electrolyzation Pending CN101012566A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 200610166373 CN101012566A (en) 2006-12-25 2006-12-25 Silicon electrolyzation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 200610166373 CN101012566A (en) 2006-12-25 2006-12-25 Silicon electrolyzation

Publications (1)

Publication Number Publication Date
CN101012566A true CN101012566A (en) 2007-08-08

Family

ID=38700289

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 200610166373 Pending CN101012566A (en) 2006-12-25 2006-12-25 Silicon electrolyzation

Country Status (1)

Country Link
CN (1) CN101012566A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101724852B (en) * 2008-10-20 2011-12-14 比亚迪股份有限公司 Method for preparing solar grade polycrystalline silicon material
CN110982381A (en) * 2019-12-11 2020-04-10 江门市壹家美环境工程有限公司 Environment-friendly coating capable of decomposing formaldehyde

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101724852B (en) * 2008-10-20 2011-12-14 比亚迪股份有限公司 Method for preparing solar grade polycrystalline silicon material
CN110982381A (en) * 2019-12-11 2020-04-10 江门市壹家美环境工程有限公司 Environment-friendly coating capable of decomposing formaldehyde

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C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20070808