CN101009309A - Organic light emitting display and method of fabricating the same - Google Patents
Organic light emitting display and method of fabricating the same Download PDFInfo
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- CN101009309A CN101009309A CNA2007100040672A CN200710004067A CN101009309A CN 101009309 A CN101009309 A CN 101009309A CN A2007100040672 A CNA2007100040672 A CN A2007100040672A CN 200710004067 A CN200710004067 A CN 200710004067A CN 101009309 A CN101009309 A CN 101009309A
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-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
Abstract
An OLED having an improved adhesion characteristic and a method of fabricating the same are provided. The OLED includes: a substrate having a pixel region and a non-pixel region except the pixel region; and an encapsulation substrate for encapsulating the substrate. The pixel region includes: a thin film transistor including a semiconductor layer, a gate electrode, and source and drain electrodes; a first electrode electrically connected with the thin film transistor; a pixel defining layer disposed on the first electrode; an organic layer having at least an emissive layer formed on the first electrode and the pixel defining layer; a second electrode disposed on the organic layer; and at least one inorganic layer. The non-pixel region includes at least one inorganic layer, and a frit disposed on the inorganic layer to encapsulate the substrate and the encapsulation substrate.
Description
Technical field
The present invention relates to a kind of organic light-emitting display device (OLED) and manufacture method thereof, more specifically, relate to a kind of OLED and manufacture method thereof with adhesion (adhesion) characteristic of improvement.
Background technology
Recently, caused extensive concern such as the flat-panel monitor of liquid crystal indicator, organic light-emitting display device and plasma display panel (PDP), these flat-panel monitors do not have some drawbacks such as the display unit of cathode ray tube (CRT).
Because liquid crystal indicator is passive device rather than selfluminous device, so there is restriction in they at aspects such as brightness, contrast, visual angle, sizes.Although PDP is a selfluminous device, their weight height, power consumption are big, and compare with other panel display apparatus make complicated.
On the other hand, because organic light emitting apparatus is a selfluminous device, so it has good visual angle and contrast.And, because that they do not need is backlight, so thin thickness, in light weight, and have lower power consumption.In addition, they also have following advantage: response speed is fast, is driven by low-voltage direct, owing to formed thereby external impact tolerance height by solid, works in wide temperature range, and makes comparatively simple.
Summary of the invention
An aspect of of the present present invention provides a kind of organic light-emitting display device, and it comprises: first substrate, second substrate, integrated morphology and glass frit seal.Described integrated morphology is formed on described first substrate.Described integrated morphology comprises non-conductive inorganic material layer and array of organic light emitting pixels.Described glass frit seal is inserted between described first and second substrates and makes it interconnection, and it surrounds described array simultaneously.Described glass frit seal has the first surface of facing described first substrate and the second surface of facing described second substrate, and described first surface contacts described non-conductive inorganic material layer.
In the embodiment of said apparatus, the described first surface of described glass frit seal is whole basically to be contacted with described non-conductive inorganic material layer.The described first surface of described glass frit seal basically overall fixed to described non-conductive inorganic material layer.Described array of organic light emitting pixels is arranged between described non-conductive inorganic material layer and described second substrate.Described array of organic light emitting pixels comprises first electrode, second electrode and is inserted in organic luminous layer between described first and second electrodes.
Described integrated morphology also comprises thin film transistor (TFT) array.Described non-conductive inorganic material layer is inserted between described array of organic light emitting pixels and the described thin film transistor (TFT) array, and described thin-film transistor is inserted between described non-conductive inorganic material layer and described first substrate.Described non-conductive inorganic material layer comprises a plurality of via holes, forms by described via hole described array of organic light emitting pixels is connected with the conduction of described thin film transistor (TFT) array interconnection.
Described non-conductive inorganic material layer has the thickness of about 1 μ m to about 5 μ m.Described integrated morphology also comprises the non-conductive organic material layer that is basically parallel to described non-conductive inorganic material layer, and described non-conductive organic material layer is formed between described non-conductive inorganic material layer and the described array of organic light emitting pixels.Described non-conductive organic material layer does not contact described glass frit seal.Described integrated morphology also comprises thin film transistor (TFT) array, wherein, described non-conductive inorganic material layer is inserted between described array of organic light emitting pixels and the described thin film transistor (TFT) array, and described thin-film transistor is inserted between described non-conductive inorganic material layer and described first substrate.Described non-conductive inorganic material layer comprises a plurality of via holes, forms the Elecrical connector that makes described array of organic light emitting pixels and the interconnection of described thin film transistor (TFT) array by described via hole.Described non-conductive organic material layer comprises at least a material of selecting from following set: acrylic resin, epoxy resin, phenolic resins, polyamide, polyimide resin, unsaturated polyester resin, polyphenylene oxide resin, polyphenylene sulfide and benzocyclobutene.
Described non-conductive inorganic material layer comprises silicon nitride (SiN
x), silica (SiO
x) and spin-on-glass (SOG) at least one of them.Described non-conductive inorganic material layer is made of one or more inorganic material basically.
Described glass frit seal comprises one or more materials of selecting from following set: magnesium oxide (MgO), calcium oxide (CaO), barium monoxide (BaO), lithia (Li
2O), sodium oxide molybdena (Na
2O), potassium oxide (K
2O), boron oxide (B
2O
3), vanadium oxide (V
2O
5), zinc oxide (ZnO), tellurium oxide (TeO
2), aluminium oxide (Al
2O
3), silicon dioxide (SiO
2), lead oxide (PbO), tin oxide (SnO), phosphorous oxide (P
2O
5), ruthenium-oxide (Ru
2O), rubidium oxide (Rb
2O), rhodium oxide (Rh
2O), iron oxide (Fe
2O
3), cupric oxide (CuO), titanium oxide (TiO
2), tungsten oxide (WO
3), bismuth oxide (Bi
2O
3), antimony oxide (Sb
2O
3), lead-borate glass, tin-phosphate glass, vanadate glass and borosilicate.The described first surface of described glass frit seal and described non-conductive inorganic material layer are along the EDGE CONTACT of described first substrate.
A kind of method of making organic light emitting display is provided.Described method comprises: first substrate and the thin film transistor (TFT) array that is formed on described first substrate are provided; On described thin film transistor (TFT) array, form non-conductive inorganic material layer; On described non-conductive inorganic material layer, form luminescence pixel array; On described first substrate, arrange second substrate, make described luminescence pixel array be inserted between described first and second substrates; And between described first and second substrates, form glass frit seal, and described glass frit seal is surrounded described luminescence pixel array, and wherein, described glass frit seal contacts described non-conductive inorganic material layer.
Described method can also comprise: before forming described light emitting pixel, on described non-conductive inorganic material layer, form non-conductive organic material layer, before forming described glass frit seal, expose the part of described non-conductive inorganic material layer, wherein, described glass frit seal contacts described part.
Described method can also comprise: before forming described luminescence pixel array, a plurality of via holes of described non-conductive inorganic material layer are passed in formation, wherein, by described via hole formation described array of organic light emitting pixels is connected with the conduction of described thin film transistor (TFT) array interconnection.Form described non-conductive inorganic material layer by spin coating.
Perhaps, a kind of organic light-emitting display device comprises: first substrate, second substrate, integrated morphology and glass frit seal.
Form integrated morphology on described first substrate, described integrated morphology comprises complanation layer and comprises the array of organic light emitting pixels of anode that wherein, described integrated morphology also comprises the extension of described anode.
Described glass frit seal is inserted between described first and second substrates and makes its interconnection, simultaneously around described array, described glass frit seal has the first surface of facing described first substrate and the second surface of facing described second substrate, wherein, described second surface contacts the described extension of described anode.
Described anode can comprise inorganic layer, and wherein, described anode can be formed by at least a material of selecting from following set: Al, MoW, Mo, Cu, Ag, Al alloy, Ag alloy, ITO, IZO and semi-transparent metals.
Described integrated morphology can also comprise the organic complanation layer that is inserted between described anode and described first substrate.Described integrated morphology can also comprise the inorganic layer that is inserted between described anode and the described organic complanation layer.
The described anode of the whole basically contact of the described first surface of described glass frit seal.The described first surface of described glass frit seal basically overall fixed to described anode.
Embodiments of the invention provide a kind of organic light-emitting display device (OLED) and manufacture method thereof with adhesion characteristics of raising.
In one exemplary embodiment of the present invention, a kind of OLED comprises: the substrate with pixel region and the non-pixel region except that described pixel region; And the base plate for packaging that is used to encapsulate described substrate.Pixel region comprises: the thin-film transistor that comprises semiconductor layer, gate electrode and source electrode and drain electrode; First electrode that is electrically connected with described thin-film transistor; The pixel that is arranged on described first electrode defines layer; Be formed at described first electrode and described pixel and define the organic layer that has emission layer at least on the layer; Be arranged at second electrode on the described organic layer; And at least one inorganic layer.Described non-pixel region comprises at least one inorganic layer and is arranged at being used on the described inorganic layer and encapsulates the frit of described substrate and described base plate for packaging.
In another one exemplary embodiment of the present invention, the method for a kind of OLED of manufacturing comprises: preparation comprises the substrate of pixel region and non-pixel region; Form the thin-film transistor that comprises semiconductor layer, gate electrode and source electrode and drain electrode being positioned on the substrate of described pixel region; On the whole surface of described substrate, form at least one inorganic layer; In described pixel region, form first electrode that is connected with described thin-film transistor; On described first electrode, form pixel and define layer; Etching and the pixel of removing on the inorganic layer of described non-pixel region define layer; Described first electrode in described pixel region and described pixel define and form the organic layer that comprises emission layer at least on the layer; On the whole surface of described substrate, form second electrode; Etching is also removed interior described second electrode of described non-pixel region; And along the edge coated glass material of described substrate or base plate for packaging, and encapsulate described substrate.
In another one exemplary embodiment of the present invention, a kind of OLED comprises: substrate, and it comprises thin-film transistor at least, be formed at inorganic layer on the described thin-film transistor, be formed at the organic complanation layer on the described inorganic layer and be formed at Organic Light Emitting Diode on described organic complanation layer; Adhere to the base plate for packaging of described substrate; And frit, it is inserted between described substrate and the described base plate for packaging, and contacts described inorganic layer.
In another one exemplary embodiment of the present invention, the method of a kind of OLED of manufacturing comprises: substrate is set, and described substrate comprises thin-film transistor, be formed at inorganic layer on the described thin-film transistor, be formed at the organic complanation layer on the described inorganic layer and be formed at Organic Light Emitting Diode on described organic complanation layer; The a certain zone of the described organic complanation layer of etching, thus a certain zone of described inorganic layer exposed; Base plate for packaging is set, has applied frit at edge, described base plate for packaging upper edge; Make described base plate for packaging adhere to described substrate, thereby make the directly described exposed region of the described inorganic layer of contact of described frit; And make the fusing of described frit and described substrate and described base plate for packaging are sealed.
In another one exemplary embodiment of the present invention, a kind of OLED comprises: substrate, and it comprises thin-film transistor at least, be formed at the organic complanation layer on the described thin-film transistor and be stacked and placed on inorganic layer and organic layer on the zone of described organic complanation layer successively; Base plate for packaging, it adheres to described substrate, thereby seals described organic layer at least; And frit, it is inserted between described substrate and the described base plate for packaging, and contacts described inorganic layer.
In another one exemplary embodiment of the present invention, the method of a kind of OLED of manufacturing comprises: substrate is set, and described substrate comprises thin-film transistor at least, be formed at the organic complanation layer on the described thin-film transistor and be stacked and placed on inorganic layer and organic layer on the zone of described organic complanation layer successively; Base plate for packaging is set, has applied frit at edge, described base plate for packaging upper edge; Make described base plate for packaging adhere to described substrate, thereby make the directly described inorganic layer of contact of described frit; And make described frit fusing and seal described substrate with encapsulated layer.
Description of drawings
Will be with reference to the accompanying drawings, with reference to some one exemplary embodiment of the present invention above-mentioned and other features of the present invention are illustrated, wherein:
Fig. 1 is the sectional view of OLED;
Fig. 2 A is a sectional view according to the OLED of first one exemplary embodiment of the present invention to Fig. 2 D;
Fig. 3 A is a sectional view according to the OLED of second one exemplary embodiment of the present invention to Fig. 3 G;
Fig. 4 A is a sectional view according to the OLED of the 3rd one exemplary embodiment of the present invention to Fig. 4 F;
Fig. 5 is the decomposing schematic representation according to the passive matrix organic light-emitting display device of an embodiment;
Fig. 6 is the decomposing schematic representation according to the active matrix type organic light emitting display unit of an embodiment;
Fig. 7 is the schematic top plan view according to the organic light emitting display of an embodiment;
Fig. 8 is the sectional view along the organic light emitting display of Fig. 7 of D-D line intercepting; And
Fig. 9 shows the perspective schematic view according to the batch process of the organic light emitting apparatus of an embodiment.
Embodiment
Now will describe the present invention with reference to the accompanying drawings more fully hereinafter, show one exemplary embodiment of the present invention in the accompanying drawing.In the accompanying drawings, exaggerated the thickness in layer and zone for clarity.In whole specification, use the same reference numerals to represent components identical all the time.
Organic light emitting display (OLED) is a kind of display unit that comprises organic LED array.Organic Light Emitting Diode is a solid state device, and it comprises organic material, is applicable to produce when applying suitable electromotive force and emission light.
Usually can OLED be divided into two fundamental types according to the configuration that exciting current is provided.Fig. 5 schematically shows the exploded view of the simplified structure of passive matrix OLED 1000.Fig. 6 schematically shows the simplified structure of active array type OLED 1001.In two kinds of configurations, OLED 1000,1001 includes the OLED pixel that is structured on the substrate 1002, and the OLED pixel comprises anode 1004, negative electrode 1006 and organic layer 1010.When anode 1004 applies suitable electric current, the electric current pixel of flowing through, and by the organic layer visible emitting.
With reference to figure 5, the elongate strip of the anode 1004 that passive matrix OLED (PMOLED) design comprises the elongate strip of negative electrode 1006, arrange perpendicular to the elongate strip of negative electrode 1006 usually and be inserted in therebetween organic layer.Each OLED pixel has been defined in the rectangular crosspoint of the rectangular and anode 1004 of negative electrode 1006, when the anode 1004 of correspondence and negative electrode 1006 rectangular is subjected to suitably encouraging, will produce at the pixel place and emission light.PMOLED provides and has made comparatively simple advantage.
With reference to figure 6, active matrix OLED (AMOLED) comprises the drive circuit 1012 that is arranged between substrate 1002 and the OLED pel array.Each pixel of AMOLED is defined between common cathode 1006 and the anode 1004, and described anode 1004 is isolated with other anode electricity.Each drive circuit 1012 is connected to the anode 1004 of OLED pixel, is connected with scan line 1018 with data wire 1016 in addition.At embodiment, scan line 1018 provides selects the capable sweep signal of drive circuit, and data wire 1016 provides data-signal for specific drive circuit.Data-signal and sweep signal encourage local drive circuit 1012, drive circuit 1012 excitation anodes 1004, thus make corresponding with it pixel luminous.
In illustrated AMOLED, local drive circuit 1012, data wire 1016 and scan line 1018 are buried in the complanation layer 1014, and complanation layer 1014 is inserted between pel array and the substrate 1002.Complanation layer 1014 provides planar top surface, forms array of organic light emitting pixels thereon.Complanation layer 1014 can be formed by the organic or inorganic material, and can be formed by two or more layers, but it may be shown single layer in the diagram.Local drive circuit 1012 has thin-film transistor (TFT) usually, and with the arranged in form of grid or array under the OLED pel array.Local drive circuit 1012 can be made of the organic material that comprises organic tft to small part.AMOLED has the fast advantage of response speed, is applied to the catering to the need property that data-signal shows thereby improved.In addition, compare with passive matrix OLED, AMOLED also has advantage low in energy consumption.
With reference to the common feature of PMOLED and AMOLED, substrate 1002 provides support structure for OLED pixel and circuit.In various embodiments, substrate 1002 can comprise rigidity or flexible material, and opaque or transparent material, for example plastics, glass and/or foil.As mentioned above, each OLED pixel or diode are formed by anode 1004, negative electrode 1006 and the organic layer 1010 that is inserted into therebetween.When anode 1004 applied suitable electric current, negative electrode 1006 injected electronics, anode 1004 injected holes.In certain embodiments, counter-rotating anode 1004 and negative electrode 1006; Promptly on substrate 1002, form negative electrode, with it the positioned opposite anode.
The one or more organic layers of plant between negative electrode 1006 and anode 1004.More particularly, at least one emission layer of plant or light-emitting layer between negative electrode 1006 and anode 1004.Light-emitting layer can comprise one or more luminous organic compounds.Typically, light-emitting layer is configured to launch the visible light of solid color, for example blue, green, red or white.In illustrated embodiment, between negative electrode 1006 and anode 1004, form the organic layer 1010 that plays the light-emitting layer effect.Other layers be can also between anode 1004 and negative electrode 1006, form, hole transport layer, hole injection layer, electron transport layer and electron injecting layer comprised.
The hole can be transported and/or implanted layer is inserted between luminescent layer 1010 and the anode 1004.Electron transport and/or implanted layer can be inserted between negative electrode 1006 and the light-emitting layer 1010.Electron injecting layer promotes to inject electronics from negative electrode 1006 to light-emitting layer 1010 by reducing from the work function of negative electrode 1006 injection electronics.Similarly, hole injection layer promotes from anode 1004 to light-emitting layer 1010 injected holes.Hole and electron transport layer promote to be injected into moving of charge carrier the light-emitting layer from counter electrode.
In certain embodiments, can realize electronics injection and transportation function or realize that by single layer the hole injects and transportation function by single layer.In certain embodiments, can omit one or more in these layers.In certain embodiments, one or more materials that can in one or more organic layers, be doped with the injection that helps charge carrier and/or transport.Having only an organic layer to be formed among the embodiment between negative electrode and the anode, described organic layer not only can comprise organic luminophor, can also comprise the functional material that some helps charge carrier to be injected in this layer and transport.
Developed and much comprised the organic material that adopts in the layer of light-emitting layer at these.And much other organic materials that are used for these layers are in the middle of the research and development.In certain embodiments, these organic materials can be the macromolecules that comprises oligomer and polymer.In certain embodiments, the organic material that is used for these layers can be less molecule.Those skilled in the art can be in specific design select to be used for each the suitable material of these layers according to the expectation function of each layer, and are adjacent layer selection material.
In operation, circuit provides suitable electromotive force between negative electrode 1006 and anode 1004.This has caused that electric current flows to negative electrode 1006 by the organic layer of planting from anode 1004.In one embodiment, negative electrode 1006 provides electronics to adjacent organic 1010.Anode 1004 is to organic layer 1010 injected holes.Hole and electronics are compound in organic layer 1010, and produce the energy particle that is called as " exciton ".To the luminous organic material in the organic layer 1010, luminous organic material adopts described energy visible emitting to exciton with its energy delivery.Produce and the spectral characteristic of the light of emission depends on the attribute and the composition of the organic molecule in the organic layer by OLED 1000,1001.Those skilled in the art can assign to satisfy concrete requirement of using by the one-tenth of selecting one or more organic layers.
Can also classify to the OLED device according to the light transmit direction.In the type that is called as " top-emission " type, the OLED device is by negative electrode or top electrodes 1006 luminous and display images.In these embodiments, negative electrode 1006 is by constituting with respect to visible transparent or translucent at least material.In certain embodiments, for fear of any light that can pass anode or bottom electrode 1004 of loss, anode can be made of the material that substantially visible light is reflected.Second type OLED device is by anode or bottom electrode 1004 emission light, and this type is called as " bottom emission " type.In bottom emissive type OLED device, anode 1004 is by constituting with respect to the translucent at least material of visible light.In bottom-emission type OLED device, negative electrode 1006 is made of the material that substantially visible light is reflected usually.The OLED device of the third type is along both direction, for example, and by anode 1004 and negative electrode 1006 the two emission light.According to the light transmit direction, substrate can be by forming with respect to visible transparent, material opaque or reflection.
In a lot of embodiment, will comprise that the OLED pel array 1021 of a plurality of organic light emission pixels is arranged on the substrate 1002, as shown in Figure 7.In an embodiment, open or close by the pixels in the drive circuit (not shown) array of controls 1021, in array 1021 by a plurality of pixels display message or image as a whole.In certain embodiments, OLED pel array 1021 is with respect to being provided with such as other assemblies that drive and control electronic device, with defined display area and non-display area.In these embodiments, the viewing area is meant the zone that forms OLED pel array 1021 on the substrate 1002.Non-display area is meant all the other zones of substrate 1002.In an embodiment, non-display area can comprise logic and/or power circuit.Should be appreciated that being arranged in the viewing area to small part of control/components of drive circuit.For example, in PMOLED, conductive component will extend in the viewing area, thereby anode and negative electrode provide suitable electromotive force.In AMOLED, the local drive circuit and the data/scan line that are connected with drive circuit will extend in the viewing area, thereby drive and control each pixel of AMOLED.
One of OLED device design and make and consider that item is, some organic material layer of OLED device may be because of being exposed to water, oxygen or other pernicious gases suffer damage or accelerated deterioration.Therefore, usually to OLED device sealing or encapsulation, with prevent its be exposed to moisture, oxygen or make or operational environment under under other pernicious gases of producing.Fig. 8 schematically shows along the cross section that encapsulates OLED device 1011 with layout shown in Figure 7 of the D-D line intercepting of Fig. 7.In this embodiment, the top board of general planar or substrate 1061 engage with seal 1071, and seal 1071 further engages with base plate or substrate 1002, thus sealing or encapsulation OLED pel array 1021.In other embodiments, on top board 1061 or base plate 1002, form one or more layers, seal 1071 is engaged via such layer with bottom or head substrate 1002.In illustrated embodiment, seal 1071 extends along the periphery of OLED pel array 1021 or base plate 1002 or top board 1061.
In an embodiment, seal 1071 is made of frit (frit) material, will do further discussion to it hereinafter.In various embodiments, top board 1061 and base plate 1002 comprise the material such as plastics, glass and/or metal forming, and it can stop that oxygen and/or moisture pass through, and avoids OLED pel array 1021 to be exposed to these materials thus.In an embodiment, at least one material by substantially transparent in top board 1061 and the base plate 1002 forms.
In order to prolong the useful life of OLED device 1011, wish that usually seal 1071 and top board 1061 and base plate 1002 provide impermeable sealing at oxygen and water vapour, and a hermetic closed substantially space 1081 is provided.In some applications, the seal 1071 that is made of frit material combines with top board 1061 and base plate 1002 to be provided the stopping of oxygen, made it to be lower than about 10
-3Cc/m
2-day, provide in addition the stopping of water, make it to be lower than 10
-6G/m
2-day.Suppose that some oxygen and moisture can be penetrated in the enclosure space 1081, so in certain embodiments, can be in enclosure space 1081 formation can absorb the material of oxygen and/or moisture.
In illustrated embodiment, seal 1071 has the cross section that is roughly rectangle.But, in other embodiments, seal 1071 can have various other cross sectional shapes, for example is roughly square cross section, is roughly trapezoidal cross section, the cross section of (rounded edge) that has one or more round edges or according to the needs of set application and other definite shapes.In order to improve leak tightness, wish to improve the directly interfacial area at position contacting place of seal 1071 and bottom or head substrate 1002,1061 or layer formed thereon usually.In certain embodiments, the shaped design of seal can be the described interfacial area of increase.
As mentioned above, in certain embodiments, adopt frit material to form seal 1071, perhaps described frit material can be abbreviated as " frit " or " glass dust (glass frit) ", it comprises tiny glass particle.Described frit particle comprises one or more in the following material: magnesium oxide (MgO), calcium oxide (CaO), barium monoxide (BaO), lithia (Li
2O), sodium oxide molybdena (Na
2O), potassium oxide (K
2O), boron oxide (B
2O
3), vanadium oxide (V
2O
5), zinc oxide (ZnO), tellurium oxide (TeO
2), aluminium oxide (Al
2O
3), silicon dioxide (SiO
2), lead oxide (PbO), tin oxide (SnO), phosphorous oxide (P
2O
5), ruthenium-oxide (Ru
2O), rubidium oxide (Rb
2O), rhodium oxide (Rh
2O), iron oxide (Fe
2O
3), cupric oxide (CuO), titanium oxide (TiO
2), tungsten oxide (WO
3), bismuth oxide (Bi
2O
3), antimony oxide (Sb
2O
3), lead-borate glass, tin-phosphate glass, vanadate glass and borosilicate etc.In an embodiment, the size of these particles is in about 2 μ m in the scope of about 30 μ m, be in about 5 μ m alternatively in the scope of about 10 μ m, but described size is not limited thereto.The size of described particle can and head substrate 1061 and bottom substrate 1002 between or the distance that is formed between any layer that contacts with glass frit seal 1071 on these substrates the same big.
The frit material that is used to form seal 1071 can also comprise one or more fillers (filler) or additive material.Can be by overall thermal expansion characteristics that described filler or additive material adjustment seal 1071 is provided and/or the absorption characteristic of adjusting seal 1071 at the selected frequency of incident radiation energy.Described filler or additive material can also comprise counter-rotating (inversion) and/or additive filler, to adjust the thermal coefficient of expansion of frit.For example, described filler or additive material can comprise the transition metal such as chromium (Cr), iron (Fe), manganese (Mn), cobalt (Co), copper (Cu) and/or vanadium.The other materials that is used for described filler or additive comprises ZnSiO
4, PbTiO
3, ZrO
2, eucryptite.
In an embodiment, comprise about 20 to about 90wt% glass particle as the frit material of dry ingredient, all the other comprise filler and/or additive.In certain embodiments, frit slurry comprises the inorganic material of organic material and the about 70-90wt% of about 10-30wt%.In certain embodiments, frit slurry comprises the inorganic material of organic material and the about 80wt% of about 20wt%.In certain embodiments, described organic material can comprise the binding agent of about 0-30wt% and the solvent of about 70-100wt%.In certain embodiments, about 10wt% of organic material is a binding agent, and approximately 90wt% is a solvent.In certain embodiments, inorganic material can comprise the filler of the additive of about 0-10wt%, about 20-40wt% and the glass powder of about 50-80wt%.In certain embodiments, about 0-5wt% of inorganic material is an additive, and approximately 25-30wt% is a filler, and approximately 65-75wt% is a glass powder.
In the process that forms glass frit seal, in dry glass material material, add fluent material, to form frit slurry.Can adopt and anyly have or do not have the organic or inorganic solvent of additive as described fluent material.In an embodiment, described solvent comprises one or more organic compounds.For example, available organic compound is ethyl cellulose, nitrocellulose, hydroxy propyl cellulose, butyl carbitol acetate (butyl carbitol acetate), terpineol, ethylene glycol monobutyl ether, acrylates compound.So, can on top board and/or base plate 1061,1002, apply the frit slurry that so forms, to form the profile of seal 1071.
In an one exemplary embodiment, form the shape of seal 1071 at first by frit slurry, and it is inserted between top board 1061 and the base plate 1002.In certain embodiments, seal 1071 can be solidified in advance or is sintered in advance on top board and one of base plate 1061 and 1002.Next top board 1061 and base plate 1002 and the seal 1071 that is inserted into are therebetween assembled, and the part of seal 1071 is heated selectively, thereby make the frit material partial melting at least that forms seal 1071.Afterwards, make seal 1071 solidification again, thereby between top board 1061 and base plate 1002, form firm connection, prevent that thus besieged OLED pel array 1021 is exposed under oxygen or the moisture.
In an embodiment, by implement selection heating such as the illumination of laser or directional ir lamp to glass frit seal.As previously mentioned, the frit material that forms seal 1071 can be combined with one or more additives or filler, for example, selected additive or filler can be the materials that is used to improve to the absorption of irradiates light, promoting being heated and melting of frit material, thereby form seal 1071.
In certain embodiments, OLED device 1011 can be produced in batches.In the embodiment shown in fig. 9, on common floor substrate 1101, form a plurality of OLED arrays 1021 that separate.In an illustrated embodiment, each OLED array 1021 is enclosed by the molding glass material package that is used to form seal 1071.In an embodiment, public head substrate (not shown) is placed on common floor substrate 1101 and the structure formed thereon, make OLED array 1021 and molding glass slip material be inserted between common floor substrate 1101 and the public head substrate.For example, closed process encapsulation and the sealing OLED array 1021 by above being used for single OLED display unit.Resulting product comprises a plurality of OLED devices of combining by common floor substrate and public head substrate.Afterwards, products therefrom is cut into a plurality of, each piece has constituted OLED device 1011 shown in Figure 8.In certain embodiments, after this each OLED device 1011 is implemented extra encapsulation operation, thereby further improve the sealing that forms by glass frit seal 1071 and top and bottom substrate 1061 and 1002.
Fig. 1 is the sectional view of OLED.With reference to figure 1, on the substrate 100 that comprises pixel region (I) and non-pixel region (II), semiconductor layer 110, gate insulator 120, gate electrode 130a, scanner driver 130b, interlayer insulating film 140 and source electrode and drain electrode 150 are set.In addition, the public power wire 150b and the second electrode power-line 150a that is made of source electrode and drain electrode interconnection further is set on substrate 100.
On the whole surface of substrate 100, complanation layer 160 is set.Described complanation layer 160 is formed by the organic material such as acrylic resin or polyimide resin.
Complanation layer 160 comprises the via hole that exposes the second electrode power-line 150a and source electrode and drain electrode 150.
On substrate, be provided with and have first electrode 171 in reflector 170, and pixel is set on the whole surface of substrate 100 defines layer 180.
Setting comprises the organic layer 190 of emission layer at least on first electrode 171, and second electrode 200 is set thereon.Be oppositely arranged base plate for packaging 210 with substrate 100.Substrate 100 and base plate for packaging 210 are finished the making of OLED thus by frit 220 sealings.
But in some OLED, the organic complanation layer that is formed by organic material is arranged at below the frit of base plate for packaging, thereby it may suffer damage because of being heated in the process of frit being carried out laser radiation.
Therefore, the adhesion at the interface between frit and the organic complanation layer will weaken.
Fig. 2 A is a sectional view according to the OLED of first one exemplary embodiment of the present invention to Fig. 2 D.
With reference to figure 2A, provide the substrate 300 that comprises pixel region (I) and non-pixel region (II).Substrate 300 can be insulating glass substrate, plastic base or electrically-conductive backing plate.
On the whole surface of substrate 300, form resilient coating 310.Resilient coating 310 can be silicon oxide layer, silicon nitride layer or by its multilayer that constitutes.In addition, resilient coating 310 also plays a part protective layer, and it prevents that impurity from being spread by substrate.
On corresponding to the gate insulator 330 of a part of semiconductor layer 320, form gate electrode 340a.Gate electrode 340a can be formed by Al, Cu or Cr.
Form interlayer insulating film 350 on the whole surface of substrate 300, interlayer insulating film 350 can be silicon oxide layer, silicon nitride layer or by its multilayer that constitutes.Interlayer insulating film 350 and gate insulator 330 in the pixel region (I) are carried out etching, to form the contact hole 351 and 352 of exposed semiconductor layer 320.
Afterwards, form source electrode and drain electrode 360a and 360b on the interlayer insulating film 350 in pixel region (I).Source electrode and drain electrode 360a and 360b can be formed by at least a material of selecting from following set: Mo, Cr, Al, Ti, Au, Pd and Ag.The source electrode also is connected with semiconductor layer 320 with 352 by contact hole 351 with 360b with drain electrode 360a.
Here, when forming gate electrode 340a, can in non-pixel region (II), form scanner driver 340b simultaneously.
Although in one exemplary embodiment, formed thin-film transistor with top grid structure, in alternative, can form thin-film transistor with bottom gate configuration, wherein, gate electrode is arranged under the semiconductor layer.
And, in an exemplary embodiment, in the forming process of source electrode and drain electrode, can form metal interconnected 360d simultaneously.The described metal interconnected effect that can play public power wire, and can also form the second electrode power-line 360c here.Perhaps, when forming the gate electrode or first electrode, can form metal interconnected simultaneously.
With reference to figure 2B, on the whole surface of substrate 300, form inorganic planar layer 370.Inorganic planar layer 370 is be selected from following set a kind of at least: silicon oxide layer, silicon nitride layer and spin-on-glass (SOG).
Here, inorganic planar layer 370 is formed the thickness with 1 to 5 μ m, to improve its complanation characteristic.When the thickness of inorganic planar layer 370 during less than 1 μ m, its complanation characteristic is good inadequately, and when it surpassed 5 μ m, device was with thickening.
In addition, inorganic planar layer 370 in the etching pixel region (I), forming any the via hole 371a among source of exposure electrode and drain electrode 360a and the 360b, and the inorganic planar layer 370 in the non-pixel region (II) is etched to part exposes the second electrode power-line 360c.
With reference to figure 2C, form first electrode 380 on the inorganic planar layer 370 in pixel region (I) with reflector 375.First electrode 380 is arranged at the bottom of via hole 371, and the source electrode that its contact is exposed and any among drain electrode 360a and the 360b extend to inorganic planar layer 370 afterwards.First electrode 380 can be formed by tin indium oxide (ITO) or indium zinc oxide (IZO).
On the whole surface of the substrate 300 that comprises first electrode 380, form pixel and define layer 390, make it to have the thickness that is enough to fill the via hole 371a that is provided with first electrode 380 on it.It can be the organic or inorganic layer that pixel defines layer 390, but is preferably organic layer.Pixel defines layer 390 and more preferably is made of one of BCB (benzocyclobutene), acrylic polymers and polyimides.Pixel defines layer 390 and has good flowability, therefore can be formed on the whole surface of substrate 300 by adequate relief.
Pixel in the etching pixel region (I) defines layer 390, forming the opening 395a that exposes first electrode 380, and the pixel in the non-pixel region (II) is defined layer 390 is etched to and exposes the second electrode power-line 360c.
In addition, etching will be defined layer 390 to the pixel of the edge of the substrate 300 in its non-pixel region (II) that encapsulates after a while, to improve the adhesion between frit and the inorganic planar layer 370.
On first electrode 380 that exposes by opening 395a, form organic layer 400.Organic layer 400 comprises emission layer at least, can comprise in hole injection layer, hole transport layer, electron transport layer and the electron injecting layer at least one in addition.
On the whole surface of substrate 300, form second electrode 410.Second electrode 410 can be by any formation the in Mg, Ag, Al, Ca and the alloy thereof.
Here, also to carrying out etching to second electrode 410 of the edge of the substrate 300 in its non-pixel region (II) that encapsulates after a while, to improve the adhesion between frit and the inorganic planar layer 370.
Here, can further form the protective layer 415 of whole covering second electrode 410.In top emission structure, it is extremely thin when being used as transparency electrode that protective layer 415 plays a part protection second electrode 410, the second electrodes 410, thereby be easy to deterioration.
With reference to figure 2D, provide base plate for packaging 420 in the face of substrate 300.Base plate for packaging 420 can be by forming through etching or without etched insulating glass.
Afterwards, on base plate for packaging 420, form absorbent 425.Absorbent 425 can be transparent absorbent or opaque absorbent, for example getter.
Here, can form transparent absorbent on the whole surface of base plate for packaging, described transparent absorbent can be select from following set at least a: alkali metal oxide, alkaline earth oxide, metal halide, metal sulfate, metal perchlorate and phosphorus pentoxide (P
2O
5), described transparent absorbent has 100nm or lower average diameter, particularly has 20 to 100nm average diameter.
Edge along base plate for packaging 420 forms frit 430.That is to say, along the edge coated glass material 430 of the base plate for packaging 420 relative with substrate 300.
Although along the edge coated glass material of base plate for packaging, also can on the inorganic planar layer of the non-pixel region (II) that is positioned at substrate, form frit in an exemplary embodiment.
Here, frit 430 can be formed by one or more that select from following set: magnesium oxide (MgO), calcium oxide (CaO), barium monoxide (BaO), lithia (Li
2O), sodium oxide molybdena (Na
2O), potassium oxide (K
2O), boron oxide (B
2O
3), vanadium oxide (V
2O
5), zinc oxide (ZnO), tellurium oxide (TeO
2), aluminium oxide (Al
2O
3), silicon dioxide (SiO
2), lead oxide (PbO), tin oxide (SnO), phosphorous oxide (P
2O
5), ruthenium-oxide (Ru
2O), rubidium oxide (Rb
2O), rhodium oxide (Rh
2O), iron oxide (Fe
2O
3), cupric oxide (CuO), titanium oxide (TiO
2), tungsten oxide (WO
3), bismuth oxide (Bi
2O
3), antimony oxide (Sb
2O
3), lead-borate glass, tin-phosphate glass, vanadate glass and borosilicate, and can be by spraying (dispensing) or silk screen printing coated glass material 430.
Although in an exemplary embodiment frit 430 is arranged on the inorganic planar layer 370, but in alternative, also can make it to be formed on the gate insulator 330 or interlayer insulating film 350 that forms by inorganic material, prevent that adhesion from weakening thereby carry out in the back when the laser radiation of frit 430 handled.
Make frit 430 fusings by laser, make it solidification once more afterwards, adhere to described substrate and base plate for packaging thus, so just finished making according to the OLED of first embodiment of the invention.
Usually, with organic complanation layer be arranged at frit below, so infringement of its heat that will be subjected to producing in the laser irradiation process.Correspondingly, the adhesion between frit and the organic complanation layer will weaken, and frit will be peeled off from organic complanation layer.
But, as mentioned above inorganic layer is formed under the frit, because its not high pyrolytic damage of Stimulated Light, so frit will can not peeled off because of the weak adhesion between frit and the inorganic layer.
Fig. 3 A is a sectional view according to the OLED of second one exemplary embodiment of the present invention to Fig. 3 G.
With reference to figure 3A, on a zone of deposit substrate 500, form semiconductor layer 510.By in presumptive area, carrying out ion doping process, semiconductor layer 510 is divided into channel layer 510a and source area and drain region 510b.
With reference to figure 3B, on the whole surface of the deposit substrate 500 that comprises semiconductor layer 510, form gate insulator 520.In addition, formation gate electrode 530 in corresponding to the zone of the channel layer 510a of gate insulator 520.
With reference to figure 3C, on the gate insulator 520 that comprises gate electrode 530, form interlayer insulating film 540.Afterwards, at least one zone of gate insulator 520 and interlayer insulating film 540, form contact hole 545.On interlayer insulating film 540, form source electrode and drain electrode 550a and the 550b that is connected with drain region 510b by contact hole 545 and source area.
With reference to figure 3D, on the interlayer insulating film 540 that comprises source electrode and drain electrode 550a and 550b, form inorganic layer 560.Inorganic layer 560 can be silicon nitride (SiN
x) layer and silica (SiO
x) layer at least one of them.The effect of inorganic layer 560 is to prevent moisture or impurity from outside diffusion, and source electrode and drain electrode 550a and 550b protected etc.
On inorganic layer 560, form organic complanation layer 570, on organic complanation layer 570, form photoresist pattern (not shown).Afterwards, adopt the photoresist pattern as mask to inorganic layer 560 and 570 etchings of organic complanation layer, thereby in a certain zone of inorganic layer 560 and organic complanation layer 570, form via hole 575.Here, Organic Light Emitting Diode 580,600 is connected with one of 550b with drain electrode 550a with the source electrode by via hole 575 with 610 first electrode 580.Can pass through wet etching or dry etching, preferably form via hole 575 by dry etching.Dry method etch technology can be utilized the common technology such as ion beam milling, RF sputter etching or reactive ion etching (RIE).Simultaneously, organic complanation layer 570 can be formed by at least a material of selecting from following set: acrylic resin, epoxy resin, phenolic resins, polyamide, polyimide resin, unsaturated polyester resin, polyphenylene oxide resin, polyphenylene sulfide and benzocyclobutene.
With reference to figure 3E, in a certain zone of organic complanation layer 570, be formed with first electrode 580 of OLED 580,600 and 610.Afterwards, the pixel that forms the opening (not shown) that comprises a certain zone that exposes first electrode 580 on the organic complanation layer 570 that comprises first electrode 580 defines layer 590.And, define on layer 590 the opening in pixel and to form organic layer 600.Define formation second electrode 610 on the layer 590 in the pixel that comprises organic layer 600.
With reference to figure 3F, etching does not form the zone of organic complanation layer 570 of thin-film transistor 510,530,550a and 550b and Organic Light Emitting Diode 580,600 and 610 in it, soon applies the zone of frit 620 on it.In other words, by to the etching as organic complanation layer 570 of the superiors, frit 620 directly contact is formed at inorganic layer below organic complanation layer 570 rather than contact organic layer.Correspondingly, to directly contacting with frit 620 such as the hot insensitive inorganic layer that is produced by laser radiation, thereby inorganic layer 560 is without prejudice in to the subsequent heat treatment of frit 620.Therefore, can improve adhesion characteristics between substrate 500 and the base plate for packaging 630 by frit 620.Simultaneously, can pass through the organic complanation layer 570 of dry etching etching.Dry method etch technology can be utilized the common technology such as ion beam milling, RF sputter etching or reactive ion etching (RIE).
With reference to figure 3G, applied the base plate for packaging 630 of frit 620 along its edge with substrate 500 positioned opposite.So, base plate for packaging 630 has been adhered on the substrate 500, encapsulate the predetermined structure that is formed on the substrate 500 by base plate for packaging 630 thus, thereby protected it not to be subjected to the influence of external oxygen, hydrogen and moisture.Here, base plate for packaging 630 is not limited to concrete material, but it can be formed by at least a material of selecting from following set: silica (SiO
2), silicon nitride (SiN
x) and silicon oxynitride (SiO
xN
y).
Do not have the zone of Organic Light Emitting Diode 580,600 and 610 at any one, between promptly non-pixel region (not shown) and the base plate for packaging frit 620 is set.Here, frit 620 formed with the inorganic layer 560 of substrate 500 directly contact, frit 620 comprises and is used to adjust the filler of thermal coefficient of expansion and is used to absorb laser or ultrared absorbent.And, can form the frit that constitutes by glass powder by making glass temperature generation rapid drawdown.Usually, adopt the frit 620 that contains oxide powder.After adding organic material to the frit that contains oxide powder, frit has become the gel-type slurry.Frit 620 according to one exemplary embodiment comprises such as SiO
2Main material, such as V
2O
5Laser or infrared absorbing agents, organic binder bond, be used to filler that reduces thermal coefficient of expansion etc.On base plate for packaging 630, apply the gel-type slurry along potted line.Afterwards, frit 620 carried out making organic material evaporate into heat treatment process in the middle of the air, make the sclerosis of gel-type slurry, to form the solid glass material.Here, can under 300 to 700 ℃ temperature, carry out the sex change of frit.
Aim on substrate 500 after the base plate for packaging 630, frit 620 is implemented laser or infrared radiation, make it fusing, frit 620 is inserted between base plate for packaging 630 and the substrate 500.Frit 620 base plate for packaging 500 and base plate for packaging 630 by fusing.
Like this, in OLED, be formed at and inorganic layer according to second one exemplary embodiment of the present invention, rather than the frit that directly contacts of organic layer, the adhesion between substrate and the base plate for packaging can be improved thus.Therefore, can effectively seal, thereby prevent the infiltration of hydrogen, oxygen and moisture, improve its life span and luminous efficiency thus OLED.
Fig. 4 A is a sectional view according to the OLED of the 3rd one exemplary embodiment of the present invention to Fig. 4 F.
With reference to figure 4A, in a certain zone of deposit substrate 700, form semiconductor layer 710.By ion doping semiconductor layer 710 is divided into channel layer 710a and source area and drain region 710b.
With reference to figure 4B, in a certain zone of the deposit substrate 700 that comprises semiconductor layer 710, form gate insulator 720.In addition, formation gate electrode 730 in corresponding to the zone of the channel layer 710a of gate insulator 720.
Afterwards, with reference to figure 4C, on the gate insulator 720 that comprises gate electrode 730, form interlayer insulating film 740.In at least one zone of gate insulator 720 and interlayer insulating film 740, form contact hole 745.On interlayer insulating film 740, form source electrode and drain electrode 750a and the 750b that is connected with drain region 710b by contact hole 745 and source area.
With reference to figure 4D, on source electrode and drain electrode 750a and 750b and interlayer insulating film 740, form inorganic layer 760.Inorganic layer 760 can be silicon nitride (SiN
x) layer and silica (SiO
x) layer at least one of them.The effect of inorganic layer 760 is to prevent moisture or impurity from outside diffusion, and source electrode and drain electrode 750a and 750b are protected.
On inorganic layer 760, form organic complanation layer 770.And, on organic complanation layer 770, form after the photoresist pattern (not shown), adopt the photoresist pattern that organic complanation layer 770 is carried out etching, thereby in a certain zone of inorganic layer 760 and organic complanation layer 770, form via hole 775.Here, be electrically connected with source electrode and one of drain electrode 750a and 750b by first electrode 780 of via hole 775 Organic Light Emitting Diode 780,800 and 810.By wet etching or dry etching, preferably form via hole 775 by dry etching.Dry method etch technology can be utilized the common technology such as ion beam milling, RF sputter etching or reactive ion etching (RIE).Simultaneously, organic complanation layer 770 can be formed by at least a material of selecting from following set: acrylic resin, epoxy resin, phenolic resins, polyamide, polyimide resin, unsaturated polyester resin, polyphenylene oxide resin, polyphenylene sulfide and benzocyclobutene.
With reference to figure 4E, in a certain zone of organic complanation layer 770, be formed with first electrode 780 of OLED 780,800 and 810.Here, first electrode 780 is an anode, and is formed by inorganic material.That is to say that first electrode 780 plays a part the adhesion of raising and frit 820, will be illustrated it hereinafter that first electrode 780 also plays a part anode simultaneously.First electrode 780 can be formed by at least a material of selecting from following set: Al, MoW, Mo, Cu, Ag, Al alloy, Ag alloy, ITO, IZO and semi-transparent metals.Afterwards, the pixel that forms the opening (not shown) that comprises a certain zone that exposes first electrode 780 on the organic complanation layer 770 that comprises first electrode 780 defines layer 790.And, define on layer 790 the opening in pixel and to form organic layer 800, define in the pixel that comprises organic layer 800 and form second electrode 810 on the layer 790.
With reference to figure 4F, applied the base plate for packaging 830 of frit 820 along its edge with substrate 700 positioned opposite.Make base plate for packaging 830 adhere to substrate 700, thereby protect the predetermined structure that is formed on the substrate 700 not to be subjected to the influence of external oxygen and moisture by base plate for packaging 830.Here, base plate for packaging 830 is not limited to some material, but can be formed by at least a material of selecting from following set: silica (SiO
2), silicon nitride (SiN
x) and silicon oxynitride (SiO
xN
y).
At non-pixel region (not shown), promptly be not formed with one of zone of OLED 780,800 and 810 in it, and frit 820 is set between the base plate for packaging 830.That is to say that formed frit 820 directly contacts with first electrode 780 that is formed by inorganic layer.Here, frit 820 comprises the absorbent that is used to adjust the filler of thermal coefficient of expansion and is used to absorb laser or infrared radiation.Simultaneously, when the temperature decrease of glass material, will form glass powder type frit.Usually, frit 820 comprises oxide powder.In addition, add organic material, make frit 820 become the gel-type slurry to the frit 820 that contains oxide powder.According to the frit 820 of one exemplary embodiment by such as SiO
2Main material, such as V
2O
5Laser or infrared absorbing agents, organic binder bond, be used to reduce the formations such as filler of thermal coefficient of expansion.Potted line along base plate for packaging 830 applies the gel-type slurry.Afterwards, under predetermined temperature frit 820 is heat-treated, at this moment, organic material evaporate in the middle of the air, thereby makes the sclerosis of gel-type slurry, to form the solid glass material.Here, can under 300 to 700 ℃ temperature, make frit plasticising (plasticized).
Then, in that base plate for packaging 830 has been formed on the substrate 700 of frit after the alignment thereon, by laser or infrared radiation frit 820 is implemented heat treatments, thereby make frit 820 fusings.Make substrate 700 and base plate for packaging 830 sealings thus.
In this one exemplary embodiment, first electrode 780 is formed by inorganic layer, and directly contacts with frit 820.But, in alternative, between the organic complanation layer 770 and first electrode 780, further form the inorganic layer (not shown), make it directly to contact the described inorganic layer of not shown frit 820 on it.Described inorganic layer can be silicon nitride (SiN
x) layer and silica (SiO
x) layer at least one of them.That is to say that first electrode 780 can be formed by inorganic layer, except that first electrode 780, can also comprise another inorganic layer.
Like this, in OLED, be formed at and inorganic layer according to the 3rd one exemplary embodiment of the present invention, rather than the frit that directly contacts of organic layer, the adhesion between substrate and the base plate for packaging can be improved thus.Therefore, can more effectively seal OLED, thereby prevent the infiltration of hydrogen, oxygen and moisture, improve its life span and luminous efficiency thus.
Therefore, in OLED and manufacture method thereof according to an embodiment of the invention, formed frit directly contacts with inorganic layer, improves the adhesion between substrate and the base plate for packaging thus.Correspondingly, can more effectively seal OLED, thereby improve its life span and luminous efficiency by the infiltration that prevents oxygen and moisture.
Although with reference to its some one exemplary embodiment special exhibition and described the present invention, those skilled in the art will be appreciated that, can make various modifications to described embodiment, and not break away from the spirit and scope of the present invention defined by the claims.
Claims (27)
1. organic light-emitting display device comprises:
First substrate;
Second substrate;
Be formed at the integrated morphology on described first substrate, wherein, described integrated morphology comprises non-conductive inorganic material layer and the array of organic light emitting pixels that is formed on the described non-conductive inorganic material layer; And
Glass frit seal, it is inserted between described first and second substrates and makes its interconnection, simultaneously around described array, described glass frit seal has the first surface of facing described first substrate and the second surface of facing described second substrate, wherein, described first surface contacts described non-conductive inorganic material layer.
2. device according to claim 1, wherein, the described first surface of described glass frit seal is whole basically to be contacted with described non-conductive inorganic material layer.
3. device according to claim 1, wherein, the described first surface of described glass frit seal basically overall fixed to described non-conductive inorganic material layer.
4. device according to claim 1, wherein, described array of organic light emitting pixels is arranged between described non-conductive inorganic material layer and described second substrate.
5. device according to claim 1, wherein, described array of organic light emitting pixels comprises first electrode, second electrode and is inserted in organic luminous layer between described first and second electrodes.
6. device according to claim 1, wherein, described integrated morphology also comprises thin film transistor (TFT) array, wherein, described non-conductive inorganic material layer is inserted between described array of organic light emitting pixels and the described thin film transistor (TFT) array, wherein, described thin-film transistor is inserted between described non-conductive inorganic material layer and described first substrate.
7. device according to claim 6, wherein, described non-conductive inorganic material layer comprises a plurality of via holes, forms by described via hole described array of organic light emitting pixels is connected with the conduction of described thin film transistor (TFT) array interconnection.
8. device according to claim 1, wherein, described non-conductive inorganic material layer has the thickness of about 1 μ m to about 5 μ m.
9. device according to claim 1, wherein, described integrated morphology also comprises the non-conductive organic material layer that is basically parallel to described non-conductive inorganic material layer, and wherein, described non-conductive organic material layer is formed between described non-conductive inorganic material layer and the described array of organic light emitting pixels.
10. device according to claim 9, wherein, described non-conductive organic material layer does not contact described glass frit seal.
11. device according to claim 9, wherein, described integrated morphology also comprises thin film transistor (TFT) array, wherein, described non-conductive inorganic material layer is inserted between described array of organic light emitting pixels and the described thin film transistor (TFT) array, wherein, described thin-film transistor is inserted between described non-conductive inorganic material layer and described first substrate.
12. device according to claim 11, wherein, described non-conductive inorganic material layer comprises a plurality of via holes, forms the Elecrical connector that makes described array of organic light emitting pixels and the interconnection of described thin film transistor (TFT) array by described via hole.
13. device according to claim 9, wherein, described non-conductive organic material layer comprises at least a material of selecting from following set: acrylic resin, epoxy resin, phenolic resins, polyamide, polyimide resin, unsaturated polyester resin, polyphenylene oxide resin, polyphenylene sulfide and benzocyclobutene.
14. device according to claim 1, wherein, described non-conductive inorganic material layer comprise silicon nitride, silica and spin-on-glass at least one of them.
15. device according to claim 14, wherein, described non-conductive inorganic material layer is made of one or more inorganic material basically.
16. device according to claim 1, wherein, described glass frit seal comprises one or more materials of selecting from following set: magnesium oxide, calcium oxide, barium monoxide, lithia, sodium oxide molybdena, potassium oxide, boron oxide, vanadium oxide, zinc oxide, tellurium oxide, aluminium oxide, silicon dioxide, lead oxide, tin oxide, phosphorous oxide, ruthenium-oxide, rubidium oxide, rhodium oxide, iron oxide, cupric oxide, titanium oxide, tungsten oxide, bismuth oxide, antimony oxide, lead-borate glass, tin-phosphate glass, vanadate glass and borosilicate.
17. device according to claim 1, wherein, the described first surface of described glass frit seal and described non-conductive inorganic material layer are along the EDGE CONTACT of described first substrate.
18. a method of making organic light emitting display comprises:
First substrate and the thin film transistor (TFT) array that is formed on described first substrate are provided;
On described thin film transistor (TFT) array, form non-conductive inorganic material layer;
On described non-conductive inorganic material layer, form luminescence pixel array;
On described first substrate, arrange second substrate, make described luminescence pixel array be inserted between described first and second substrates; And
Form glass frit seal between described first and second substrates, described glass frit seal is surrounded described luminescence pixel array, and wherein, described glass frit seal contacts described non-conductive inorganic material layer.
19. method according to claim 18, also comprise: before forming described light emitting pixel, on described non-conductive inorganic material layer, form non-conductive organic material layer, wherein, before forming described glass frit seal, expose the part of described non-conductive inorganic material layer, wherein, described glass frit seal contacts described part.
20. method according to claim 18, also comprise: before forming described luminescence pixel array, a plurality of via holes of described non-conductive inorganic material layer are passed in formation, wherein, by described via hole formation described array of organic light emitting pixels is connected with the conduction of described thin film transistor (TFT) array interconnection.
21. method according to claim 18 wherein, forms described non-conductive inorganic material layer by spin coating.
22. an organic light-emitting display device comprises:
First substrate;
Second substrate;
Be formed at the integrated morphology on described first substrate, wherein, described integrated morphology comprises complanation layer and comprises the array of organic light emitting pixels of anode that wherein, described integrated morphology also comprises the extension of described anode; And
Glass frit seal, it is inserted between described first and second substrates and makes its interconnection, simultaneously around described array, described glass frit seal has the first surface of facing described first substrate and the second surface of facing described second substrate, wherein, described first surface contacts the described extension of described anode.
23. device according to claim 22, wherein, described anode comprises inorganic layer, and wherein, described anode is formed by at least a material of selecting from following set: Al, MoW, Mo, Cu, Ag, Al alloy, Ag alloy, ITO, IZO and semi-transparent metals.
24. device according to claim 22, wherein, described integrated morphology also comprises the organic complanation layer that is inserted between described anode and described first substrate.
25. device according to claim 24, wherein, described integrated morphology also comprises the inorganic layer that is inserted between described anode and the described organic complanation layer.
26. device according to claim 22, wherein, the described extension of the described anode of the whole basically contact of the described first surface of described glass frit seal.
27. device according to claim 22, wherein, the described first surface of described glass frit seal basically overall fixed to the described extension of described anode.
Applications Claiming Priority (4)
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| KR7026/06 | 2006-01-23 | ||
| KR1020060007026A KR100685852B1 (en) | 2006-01-23 | 2006-01-23 | Organic electroluminescence display device and method for fabricating of the same |
| KR16854/06 | 2006-02-21 | ||
| KR16855/06 | 2006-02-21 |
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| CN103311455A (en) * | 2012-03-13 | 2013-09-18 | 乐金显示有限公司 | Method of fabricating thin film transistor substrate and organic light emitting display device using the same |
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2006
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| CN103189323B (en) * | 2010-10-26 | 2016-01-20 | 肖特公开股份有限公司 | Transparent layer composite component |
| CN103311455A (en) * | 2012-03-13 | 2013-09-18 | 乐金显示有限公司 | Method of fabricating thin film transistor substrate and organic light emitting display device using the same |
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| WO2015165184A1 (en) * | 2014-04-30 | 2015-11-05 | 京东方科技集团股份有限公司 | Amoled array substrate and manufacturing method and display device |
| US9691834B2 (en) | 2014-04-30 | 2017-06-27 | Boe Technology Group Co., Ltd. | AMOLED array substrate, producing method thereof and display apparatus |
| CN103985736A (en) * | 2014-04-30 | 2014-08-13 | 京东方科技集团股份有限公司 | AMOLED array substrate, manufacturing method and display device |
| CN106941109A (en) * | 2016-01-04 | 2017-07-11 | 上海和辉光电有限公司 | A kind of OLED display panel and preparation method thereof |
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| CN109728184A (en) * | 2017-10-27 | 2019-05-07 | 株式会社日本有机雷特显示器 | The manufacturing method of electronic device and electronic device |
| CN109728184B (en) * | 2017-10-27 | 2022-01-14 | 株式会社日本有机雷特显示器 | Electronic device and method for manufacturing electronic device |
| CN108493225A (en) * | 2018-04-24 | 2018-09-04 | 京东方科技集团股份有限公司 | The packaging method of display device, display device and preparation method thereof |
| CN111162191A (en) * | 2019-03-18 | 2020-05-15 | 广东聚华印刷显示技术有限公司 | Packaging structure, display panel and preparation method thereof |
| TWI801284B (en) * | 2022-02-25 | 2023-05-01 | 友達光電股份有限公司 | Display panel |
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