CN101009100A - 垂直磁记录介质、及其制造方法 - Google Patents
垂直磁记录介质、及其制造方法 Download PDFInfo
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- G—PHYSICS
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- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/657—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing inorganic, non-oxide compound of Si, N, P, B, H or C, e.g. in metal alloy or compound
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/667—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers including a soft magnetic layer
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- G—PHYSICS
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- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
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- G—PHYSICS
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- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
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Abstract
本发明涉及一种垂直磁记录介质。所述的垂直磁记录介质包括非磁性基材及依次形成在所述非磁性基材上的软磁材料层、含氧中间层及垂直磁记录层;所述垂直磁记录层中包括垂直铁磁晶粒及分散在所述垂直铁磁晶粒边界之间的类金刚石碳,所述垂直铁磁晶粒自身产生的磁场方向与所述垂直磁记录层垂直。所述的磁记录介质中,磁记录材料晶粒相互之间实现良好的磁隔离,噪音低,抗热搅动能力强,存储密度高。所述的磁记录装置中磁头可具有超低的飞高。
Description
【技术领域】
本发明涉及一种磁记录介质,尤其涉及一种垂直磁记录介质。
【背景技术】
随着信息社会不断的发展,需要处理的信息量与日俱增;另一方面,当今各种电子产品追求“轻薄短小”以适应市场需求,因此高密度磁存储设备的需求日益高涨。为解决这个问题,人们需要研究出高灵敏度的磁读写头及磁记录介质。
现有仍在使用的水平磁记录介质中,相邻的磁记录单元中磁场方向相对。当磁记录单元变小时,相邻磁记录单元中的磁场干扰增强。而存储密度与磁记录单元大小成反比,为了在防止相邻磁记录单元之间磁干扰的同时增加存储密度,必需增加磁记录介质层的磁矫顽力,减小磁记录介质层的厚度。但是当磁矫顽力变大时磁读写头的写入效率降低。而当减小磁记录介质层的厚度时,磁记录单元体积变小,易于发生热搅动现象,磁记录介质层中记录的信息可能会丢失。由于上述问题的存在,使用现有的水平磁记录方式以提高磁存储密度变得很困难。
为了克服上述问题,人们在广泛研究垂直磁记录介质。垂直磁记录介质中,相邻的磁记录单元中磁场的方向不是相对的,而是相互平行的,从而高密度的存储状态是可以稳定存在的。因此垂直磁记录技术被认为是非常适合高密度存储。而且可以将单极型磁头与包括一软磁材料层的两层型垂直磁记录介质配合使用以提高写入效率,其可克服较高的磁矫顽力。为了得到高存储密度的垂直磁记录设备,需要提供一种噪音低、抗热搅动能力强的垂直磁记录介质。
人们进行研究的垂直磁记录层的材料包括水平磁记录介质中实际使用的钴铬铂合金。为了减小噪音,提高抗热搅动能力,将磁记录层的晶粒制备的很精细、均匀并相互之间磁隔离是很重要的。
在水平磁记录介质中,钴铬铂合金的晶粒边界之间很容易用铬实现磁隔离从而可获得低噪音的性质。但是在垂直磁记录介质中,磁记录层的六边形晶粒的中心轴与水平面垂直,相邻的晶粒之间仅仅在水平面上晶体取向上稍有不同,因此晶粒相互结合而变大,不易实现磁隔离,也就不易得到低噪音的性质。
【发明内容】
有鉴于此,有必要提供一种具有高存储密度、低噪音、抗热搅动能力强的垂直磁记录介质,及其制备方法。
一种垂直磁记录介质,其包括非磁性基材及依次形成在所述非磁性基材上的软磁材料层、含氧中间层及垂直磁记录层;所述垂直磁记录层中包括垂直铁磁晶粒及分散在所述垂直铁磁晶粒边界之间的类金刚石碳,所述垂直铁磁晶粒自身产生的磁场方向与所述垂直磁记录层垂直。
一种垂直磁记录介质的制备方法,其包括以下步骤:提供非磁性基材;在所述非磁性基材上形成软磁材料层;在所述软磁材料层上形成含氧中间层;采用碳质靶材及铁磁材质靶材同时在所述含氧中间层上混合溅镀垂直磁记录层,所述垂直磁记录层中包括垂直铁磁晶粒及分散在的所述垂直铁磁晶粒边界之间的类金刚石碳。
所述的垂直磁记录介质中,由于非磁材料类金刚石碳分散于垂直铁磁晶粒边界之间,从而垂直铁磁晶粒之间实现了良好的磁隔离,可降低交换耦合现象的发生,磁记录层的噪音降低,信噪比增高。另外由于类金刚石碳具有良好的热力学性质、耐磨性能及低摩擦系数,从而磁记录层抗热搅动能力增强,且具有良好的耐磨性能,使用本实施例的磁记录介质的磁记录装置中磁头可具有超低的飞高(Flying Height)。
【附图说明】
图1是本发明实施例的磁记录介质剖面示意图。
图2是图1沿II-II面剖面示意图。
图3是本发明实施例的磁记录介质制备方法流程图。
图4是本发明实施例的磁记录装置示意图。
图5是本发明实施例的磁记录装置的磁头示意图。
【具体实施方式】
参阅图1,本发明实施例的磁记录介质1包括非磁性基材10、形成在非磁性基材上的软磁材料层11、形成在软磁材料层11上的含氧中间层12及形成在含氧中间层12上的垂直磁记录层13。
非磁性基材10可为镀有镍磷镀层的铝、玻璃或玻璃陶瓷。
软磁材料层11可为铁化镍、碳化铁、铁硅铝合金、铁钴硼合金、镍铁铜钼合金、钴锆铌合金及镍铁铌合金中的至少一种。其厚度可为2~200纳米,优选为5~100纳米。软磁材料层11的磁场方向可与非磁性基材10表面平行。软磁材料层11可提高磁记录介质写入时的效率。
含氧中间层12可为铬、钴、钌或钽的氧化物,其厚度可为1~10纳米,优选为1~5纳米。
一起参阅图2,垂直磁记录层13包括垂直铁磁晶粒131及分散在垂直铁磁晶粒131之间的类金刚石碳132。铁磁晶粒131为铁磁材料的晶粒,本实施例中采用钴铬铂合金。垂直铁磁晶粒131可与含氧中间层12垂直,其高度可为8~25纳米,优选为10~15纳米。垂直铁磁晶粒131在与垂直磁记录层13平行的方向上的截面可呈正六边形,正六边形内切圆的直径可为5~25纳米,其自身产生的磁场方向与垂直磁记录层13表面垂直,其具有很高的磁异向能。垂直铁磁晶粒131可排列成有序的结构,每个垂直铁磁晶粒131的取向可一致,取任一垂直铁磁晶粒131,其周围的具有六个垂直铁磁晶粒,分别位于以其为中心的正六边形的六个顶点上,相邻两个垂直铁磁晶粒131之间的间隔为1~5纳米。类金刚石碳132还可为纯的类金刚石碳或氮氢掺杂的类金刚石碳。类金刚石碳132与垂直铁磁晶粒131的摩尔比可为4%~8%。
本实施例中,由于非磁材料类金刚石碳132分散于垂直铁磁晶粒131之间,从而相邻垂直铁磁晶粒131之间实现了良好的磁隔离,可降低交换耦合现象的发生,降低磁记录层13的噪音,增高信噪比。另外由于类金刚石碳具有良好的热力学性质、耐磨性能及低摩擦系数,从而磁记录层13抗热搅动能力增强,且具有良好的耐磨性能,使用本实施例的磁记录介质的磁记录装置中磁头可具有超低的飞高(Flying Height)。
参阅图3,本发明实施例的磁记录介质1的制备方法包括以下步骤:
步骤31,提供非磁性基材10。非磁性基材10可为镀有镍磷镀层的铝、玻璃或玻璃陶瓷。本实施例中选用厚度0.635毫米、直径65毫米的镀有镍磷镀层的铝质硬盘基板。
步骤32,在非磁性基材10上形成软磁材料层11。软磁材料层11可为铁化镍、碳化铁、铁硅铝合金、铁钴硼合金、镍铁铜钼合金、钴锆铌合金及镍铁铌合金中的至少一种。其厚度可为2~200纳米,优选为5~100纳米。本实施例中使用直径100毫米的钴锆铌靶材,采用直流磁控溅镀法在非磁性基材10上溅镀形成厚度为10纳米的软磁材料层11。可调节溅镀时的功率或者溅镀时间得到预定厚度的镀层。溅镀气体可为氩气。溅镀时的压力可为0.5帕斯卡(Pa)。
步骤33,在软磁材料层11上形成含氧中间层12。含氧中间层12可为铬、钴、钌或钽的氧化物,其厚度可为1~10纳米,优选为1~5纳米。与步骤2相类似,本步骤也可采用溅镀制程。采用可为铬、钴、钌或钽的氧化物为靶材,本实施例中采用直流磁控溅镀法溅镀一厚度为1纳米的氧化钴含氧中间层12。溅镀气体可为氩气。溅镀时的压力可为0.5Pa。
步骤34,采用碳质靶材及铁磁材质靶材同时在含氧中间层12上混合溅镀垂直铁磁记录层13。垂直磁记录层13包括垂直铁磁晶粒131及分散在垂直铁磁晶粒131边界之间的类金刚石碳132。
碳质靶材可为石墨,铁磁材质靶材可为钴铬铂合金。垂直铁磁记录层13厚度可为8~25纳米,优选为10~15纳米。
类金刚石碳132可采用直流磁控溅镀法或射频磁控溅镀法溅镀。溅镀气体可为氩气与含氢气体的混合气体,含氢气体可为甲烷、乙烷或氢气。直流磁控溅镀时压力可为0.5Pa,采用射频磁控溅镀法时压力可为2Pa。
为得到氮氢掺杂的类金刚石碳,可利用含有氮气的溅镀气体,可在上述溅镀气体中加入氮气。
混合溅镀时,由于含氧中间层12中晶体结构取向不同,从铁磁材质靶材上溅镀下来的粒子按原来的结构取向生长,由于具有不同的取向会自然分离,相当于含氧中间层12上具有分布均匀的溅镀成长核心,具有磁性的垂直铁磁晶粒131会围绕溅镀成长核心成长形成铁磁晶粒阵列。而类金刚石碳属于无定型物质,其中的原子原子量小,形成类金刚石碳的基本结构单元微晶之间结合力相对较弱,即使在垂直铁磁晶粒131上沉积有类金刚石碳的微晶,最终也会被赶到铁磁晶粒的边界中间。从而形成类金刚石碳132分散在垂直铁磁晶粒131中间的结构。
参阅图4,是采用本发明实施例的垂直磁记录介质的磁记录装置示意图。磁记录装置4包括垂直磁记录介质41、用于驱动垂直磁记录介质41的驱动装置42、包括磁读/写机构的磁头43、用驱动磁头43相对垂直磁记录介质41运动的磁头驱动装置44及向磁头输入写入信号或从磁头读取信号的信号处理单元45。
参阅图5,磁头43可为单极型磁头,其包括读取单元431及写入单元432。读取单元431可为巨磁阻(Giant Magneto-Resistance,GMR)感应器。写入单元432包括锥尖发射极433及回收极434,由于锥尖发射极433尖端很小,尖端处的磁场强度高,可实现高效的写入操作,而回收极434较宽,磁场经过垂直磁记录层后返回收极434时强度较小,而不对回收极处的磁记录单元中存储的信号产生影响。
由于磁记录介质41中的类金刚石碳具有良好的摩擦学性能,磁记录装置中磁头42可具有极低的飞高,其飞高可为2~7纳米。飞高越低,则磁头的读写效率越高,磁记录介质可具有更高的解析度,存储密度提高。
另外,本领域技术人员还可在本发明精神内做其它变化。当然,这些依据本发明精神所做的变化,都应包含在本发明所要求保护的范围之内。
Claims (16)
1.一种垂直磁记录介质,其包括非磁性基材及依次形成在所述非磁性基材上的软磁材料层、含氧中间层及垂直磁记录层;
所述垂直磁记录层中包括垂直铁磁晶粒及分散在所述垂直铁磁晶粒边界之间的类金刚石碳,所述垂直铁磁晶粒自身产生的磁场方向与所述垂直磁记录层垂直。
2.如权利要求1所述的垂直磁记录介质,其特征在于所述的软磁材料层为铁化镍、碳化铁、铁硅铝合金、铁钴硼合金、镍铁铜钼合金、钴锆铌合金及镍铁铌合金中的至少一种。
3.如权利要求1所述的垂直磁记录介质,其特征在于所述的软磁材料层厚度为2~200纳米。
4.如权利要求1所述的垂直磁记录介质,其特征在于所述的含氧中间层为铬、钴、钌或钽的氧化物。
5.如权利要求1所述的垂直磁记录介质,其特征在于所述的含氧中间层的厚度为1~10纳米。
6.如权利要求1所述的垂直磁记录介质,其特征在于所述的垂直铁磁晶粒为钴铬铂合金晶粒。
7.如权利要求1所述的垂直磁记录介质,其特征在于所述的类金刚石碳为氮氢掺杂的类金刚石碳。
8.如权利要求1所述的垂直磁记录介质,其特征在于所述的垂直磁记录层厚度为8~25纳米。
9.如权利要求1所述的垂直磁记录介质,其特征在于所述的垂直铁磁晶粒的沿与垂直磁记录层平行的方向的截面为正六边形。
10.如权利要求9所述的垂直磁记录介质,其特征在于所述的正六边形内切圆的直径为5~25纳米。
11.如权利要求9所述的垂直磁记录介质,其特征在于取垂直铁磁介质中的任一垂直铁磁晶粒,其周围可包括六个分别位于以其为中心的正六边形的六个顶点上的垂直铁磁晶粒。
12.如权利要求1所述的垂直磁记录介质,其特征在于相邻的两垂直铁磁晶粒之间的间隔为1~5纳米。
13.一种垂直磁记录介质的制备方法,其包括以下步骤:
提供非磁性基材;
在所述非磁性基材上形成软磁材料层;
在所述软磁材料层上形成含氧中间层;
采用碳质靶材及铁磁材质靶材同时在所述含氧中间层上混合溅镀垂直磁记录层,所述垂直磁记录层中包括垂直铁磁晶粒及分散在的所述垂直铁磁晶粒边界之间的类金刚石碳。
14.如权利要求13所述的垂直磁记录介质的制备方法,其特征在于形成软磁材料层时采用的是直流磁控溅镀法,所用的靶材可为铁化镍、碳化铁、铁硅铝合金、铁钴硼合金、镍铁铜钼合金、钴锆铌合金及镍铁铌合金中的至少一种。
15.如权利要求13所述的垂直磁记录介质的制备方法,其特征在于形成含氧中间层时采用的是直流磁控溅镀法,所用的靶材为铬、钴、钌或钽的氧化物。
16.如权利要求13所述的垂直磁记录介质的制备方法,其特征在于混合溅镀垂直磁记录层时采用的为直流磁控溅镀法或射频磁控溅镀法,所述的碳质靶材为石墨,所述的垂直铁磁材质靶材为钴铬铂合金。
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US8993133B1 (en) | 2010-12-23 | 2015-03-31 | WD Media, LLC | Intermediate layer for perpendicular magnetic recording medium with high permeability grain boundaries |
US8956741B1 (en) | 2011-06-30 | 2015-02-17 | WD Media, LLC | Magnetic recording media with small grain size and narrow c-axis dispersion by using dual seed layer with substrate bias |
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