CN101008663A - Method for detecting electric leakage failure point of electronic devices - Google Patents
Method for detecting electric leakage failure point of electronic devices Download PDFInfo
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- CN101008663A CN101008663A CN 200710063417 CN200710063417A CN101008663A CN 101008663 A CN101008663 A CN 101008663A CN 200710063417 CN200710063417 CN 200710063417 CN 200710063417 A CN200710063417 A CN 200710063417A CN 101008663 A CN101008663 A CN 101008663A
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Abstract
This invention provides one method to test electron part leakage invalid point, which is characterized by the following: loading electrical stress charge by increase type at leakage invalid part over section till the section appears local burst erosion area or local baking area by use of microscope lens to determine local burst erosion area or local baking area as electron part leakage invalid point. The method needs no infrared microscope imaging device to find out detail parts of leakage.
Description
Technical field
The present invention relates to a kind of in the failure analysis of electronic devices and components, adopted electronic devices and components are crossed the method that the simple and easy experimental technique, particularly a kind of detecting electric leakage failure point of electronic devices of definite electric leakage failure point location are carried out in electric cross section.
Background technology
Failure analysis is make zero one essential link of product bug, and in failure analysis, find out and the part of confirming to lose efficacy in concrete failpoint, then normally determine the product failure reason and find out a necessary condition of issue-resolution.
The basic failure mode of electron device has three kinds, i.e. short circuit, open circuit and leak electricity.Because the short circuit and the pattern that opens circuit belong to two extreme cases of inefficacy, in general, such inefficacy also is accompanied by tangible physical features or character variation, therefore, often can pass through direct Observations Means,, thereby the inefficacy part be checked determine concrete failpoint as optical microscope etc.
Electric leakage was lost efficacy and was not then possessed such feature, conventional optical detection means often can't be determined concrete failure site, unusual position even can find in some cases to lose efficacy in the part, generally, these observationss also are not enough to be used as the electric leakage position that direct physical proof proves that these unusual positions are exactly the inefficacy part.
At present, the lost efficacy the most frequently used means of location of being used to leak electricity are infrared thermal imagings, at electron device, generally also need employed infrared thermal imaging equipment to possess micro-ability.This makes to lose efficacy locatees the restriction that is subjected to whether possessing the such experimental ability of infrared thermal imaging and institute's use thermal imaging system resolution, and in addition, these means also exist the too high problem of experimental cost, so that be difficult to carry out under the common laboratory condition.
Summary of the invention
The present invention is directed to the defective or the deficiency that exist in the prior art, a kind of method of detecting electric leakage failure point of electronic devices is provided, adopt this method to need not to possess under the experiment condition of infrared microscopy thermal imaging apparatus, just can find or confirm the concrete position of components and parts electric leakage fast and simply, be specially adapted to components and parts by failpoints that method be can not determine such as conventional microexaminations.
Technical conceive of the present invention is, by on the electric cross section of mistake of electric leakage ineffective part, loading electric stress load in cumulative mode, cross local ablated area of appearance or local scorification zone on the electric cross section up to utilizing microscope can observe this, this part ablated area or local scorification zone are electric leakage failure point of electronic devices, and this detects process and need not to possess the infrared microscopy thermal imaging apparatus.
Technical scheme of the present invention is as follows:
The method of detecting electric leakage failure point of electronic devices, it is characterized in that: on the electric cross section of mistake of electric leakage ineffective part, load electric stress load in cumulative mode, cross local ablated area of appearance or local scorification zone on the electric cross section up to utilizing microscope can observe this, thereby determine that this part ablated area or local scorification zone are electric leakage failure point of electronic devices.
Further comprising the steps of: as before loading electric stress load, to have abnormal area, then write down or mark, so that primary part observation if cross on the electric cross section.
Further comprising the steps of: after local ablated area or local scorification zone occurring on the electric cross section of mistake, survey the current-voltage curve of electron device again, verify that by the increase of leakage current this part ablated area or local scorification zone are electric leakage failure point of electronic devices.
Described electric stress load is direct current or low-frequency ac load.
Describedly load electric stress load in cumulative mode and refer to, increase voltage gradually and made the electric current that passes through on the electric cross section be higher than its ratings, and can after being higher than its ratings, stop certain hour, so that observe.
Described mistake exists abnormal area to refer on the electric cross section, by grinding the abnormal area of observed color behind the electric cross section or surface textures such as texture, pattern.
Technique effect of the present invention is as follows:
Adopt the method for detecting electric leakage failure point of electronic devices of the present invention, electric leakage failure site that can very fast definite components and parts, and simple to operate, effect is obvious.At present, also do not have a kind of experimental technique simple, that lower components and parts electric leakage was lost efficacy and located to requirement for experiment condition, the present invention has remedied this disappearance effectively.
Description of drawings
Fig. 1 is the preceding microscopic cross-section figure of the big electric stress of capacitive load after dissecting; Arrow indication color exception zone among Fig. 1.
The microscopic cross-section figure of Fig. 2 after for the big electric stress of capacitive load after dissecting; Arrow is indicated local ablated area among Fig. 2.
Fig. 3 is the variation diagram of electrical property before and after the big electric stress of capacitive load after dissecting; Axis of ordinates is leakage current (a unit milliampere) among Fig. 3, abscissa axis is electric capacity both end voltage (a unit volt), the test result of steeper curve representation after local ablated area appears in the loading electric stress, the test result of more flat curve representation before loading electric stress.
Fig. 4 strengthens the preceding microscopic cross-section figure of electric stress for the triode after dissecting, and outshot is the electrophoresis vitreum.
Fig. 5 is the microscopic cross-section figure after the triode after dissecting strengthens electric stress; Arrow is indicated local scorification zone among Fig. 5.
Fig. 6 strengthens the variation diagram of electric stress front and back electrical property for the triode after dissecting; Axis of ordinates is leakage current (a unit microampere) among Fig. 6, abscissa axis is both end voltage between the collector base stage (a unit volt), the test result of more flat curve representation after local ablated area appears in the loading electric stress, the test result of steeper curve representation before loading electric stress.
Embodiment
Below in conjunction with drawings and Examples the present invention is at length described.
At present electronic devices and components electric leakage lost efficacy the location to appointed condition require high, experimental cost is high, therefore be difficult to the problem of carrying out under the common laboratory condition, the invention provides a kind of experimental technique that adopts big electric stress to leak electricity to lose efficacy the location.The technical problem to be solved in the present invention is how under the experiment condition that does not possess the infrared microscopy thermal imaging, find or confirm the concrete position of components and parts electric leakages fast and simply, institute to liking components and parts by failpoints that method be can not determine such as conventional microexaminations.
The present invention is based on following know-why:
1, utilize and to have damaged or the part electric leakage feature of rejected region, when components and parts loaded big electric stress load, damage or rejected region had become weakness zone, and local current is excessive, thereby the phenomenon of ablating in this part occurs.
2, the ablation position that utilizes common optical check means to find out or confirm to be occurred again, thus the electric leakage inefficacy of components and parts is positioned.
The electric leakage that utilizes the present invention to carry out components and parts was lost efficacy to locate and must be noted following some problems:
1, before being lost efficacy in the location in the electric leakage that utilizes the present invention to carry out components and parts, need confirm that the electric leakage of components and parts was lost efficacy, and components and parts inside do not observe tangible physical damnification, perhaps such damage can not constitute the direct physical evidence of component failure.
2, adopt the present invention that ineffective part is carried out big electric stress when loading, should adopt direct current or low-frequency ac load,, make this cross section spatially be subjected to uniform external applied load to guarantee that electric load is added in components and parts equably and crosses on the electric cross section.
3, the mode of Jia Zaiing should be observed incremental principle, promptly guarantees external applied load homogeneity in time, avoids device is caused electric load impacting and brings extra damage.
4, experimental technique described in the invention is destructive and irreversible, in considered repealed is analyzed, need be placed on nondestructive test and carry out later on.
The invention has the beneficial effects as follows, electric leakage failure site that can very fast definite components and parts, and simple to operate, effect is obvious.At present, also do not have a kind of experimental technique simple, that lower components and parts electric leakage was lost efficacy and located to requirement for experiment condition, the present invention has remedied this disappearance effectively.
In order particularly the present invention to be illustrated, following case according to two different components illustrates the present invention.For outstanding content of the present invention, do not repeat them here about other analytical procedures such as the observation of the outward appearance in the two case failure analyses, failure mode affirmations, bottom mainly is the implementation step that failure site is determined.
Embodiment 1:
Inefficacy components and parts: ceramic dielectric patch capacitor; Failure mode: it is bigger than normal to leak electricity.
Problem description: observe in its internal physical structure process at grinding electric capacity, finding has a wire field color unusual, as Fig. 1, but can not determine whether it is the zone that causes electric leakage.From figure, can clearly observe densely covered parallel stripes, be metal electrode, the two end electrodes about they are connected to respectively separately.Because exist ceramic dielectric between each parallel pole, so, under the normal condition, non-conductive between the two poles of the earth.
Implementation process: electric capacity is strengthened electric stress (making alive gradually makes that electric current by electric capacity is greater than its ratings) continue for some time; Find that with microscopic examination capacitive surface this moment tangible ablation phenomen has appearred in the zone of original color exception,, record the voltage-to-current curve of electric capacity this moment again, find that leakage current obviously becomes big as Fig. 2.Illustrate that this color exception zone is the electric leakage zone, when strengthening voltage, it is overheated that the electric leakage zone causes because of electric current is excessive, thereby produce ablation phenomen, causes the further increase of electric leakage and ablate, as Fig. 3.
Embodiment 2:
Ineffective part: triode; Failure mode: reverse leakage is bigger than normal between collector and base stage.
Problem description: after obtaining typical section of triode,, can not determine its electric leakage position as Fig. 4.Bright areas among the figure is the silicon of triode, and collector is in the bottom of chip, and base stage is then at the top.For guaranteeing do not having leakage current between the two poles of the earth under the reverse alive condition, and electric leakage generally is that along boudary portion (right side boundary of chip as shown in FIG.) common solution to take place be to open an electrophoresis tank (the grey color part of chip internal as shown in FIG.) with certain depth at the periphery of silicon chip top (upper surface), electrophoresis tank inside is electrophoresis glass, constitutes the electric leakage separation layer of an insulation.
Implementation process: give and oppositely to strengthen electric stress (making alive gradually between transistor collector and base stage, make that electric current by collector and base stage is greater than its ratings) continue for some time, the whole left side intersection of finding triode chip and electrophoresis glass has tangible scorification phenomenon, as Fig. 5.Can judge that thus this zone is the electric leakage zone, when loading big voltage, the electric leakage zone is because current concentration, it is overheated to cause, produce the scorification phenomenon, and significant change has taken place also its electrical property, this variation has illustrated that the intersection of triode chip and electrophoresis glass has constituted the path that leakage current passes through, for the electric leakage failure site, as Fig. 6.
Can find that by above case step the present invention has easy enforcement, outstanding effect characteristics.But notice that the present invention is a kind of destructive failure analysis method, before using the present invention, will write down the various information of inefficacy components and parts as much as possible, in order to using with post analysis.
Should understand, except that the qualification that claims of the present invention are made, the specific embodiment that the present invention is not limited in the instructions to be narrated.
Claims (6)
1. the method for detecting electric leakage failure point of electronic devices, it is characterized in that: on the electric cross section of mistake of electric leakage ineffective part, load electric stress load in cumulative mode, cross local ablated area of appearance or local scorification zone on the electric cross section up to utilizing microscope can observe this, thereby determine that this part ablated area or local scorification zone are electric leakage failure point of electronic devices.
2. the method for detecting electric leakage failure point of electronic devices according to claim 1 is characterized in that: further comprising the steps of: before loading electric stress load, have abnormal area if cross on the electric cross section, then write down or mark, so that primary part observation.
3. the method for detecting electric leakage failure point of electronic devices according to claim 1, it is characterized in that: further comprising the steps of: after local ablated area or local scorification zone occurring on the electric cross section of mistake, survey the current-voltage curve of electron device again, verify that by the increase of leakage current this part ablated area or local scorification zone are electric leakage failure point of electronic devices.
4. the method for detecting electric leakage failure point of electronic devices according to claim 1, it is characterized in that: described electric stress load is direct current or low-frequency ac load.
5. the method for detecting electric leakage failure point of electronic devices according to claim 1, it is characterized in that: describedly load electric stress load in cumulative mode and refer to, increasing voltage gradually made the electric current that passes through on the electric cross section be higher than its ratings, and after being higher than its ratings, stop certain hour, so that observe.
6. the method for detecting electric leakage failure point of electronic devices according to claim 2, it is characterized in that: described mistake exists abnormal area to refer on the electric cross section, by grinding the abnormal area of observed color behind the electric cross section or surface textures such as texture, pattern.
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| CN 200710063417 CN101008663A (en) | 2007-01-31 | 2007-01-31 | Method for detecting electric leakage failure point of electronic devices |
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| CN 200710063417 CN101008663A (en) | 2007-01-31 | 2007-01-31 | Method for detecting electric leakage failure point of electronic devices |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105301475A (en) * | 2015-09-22 | 2016-02-03 | 上海华虹宏力半导体制造有限公司 | Packaging chip back surface failure point locating method |
| CN106876296A (en) * | 2017-01-03 | 2017-06-20 | 航天科工防御技术研究试验中心 | A kind of semiconductor device failure localization method |
| CN107544014A (en) * | 2016-06-24 | 2018-01-05 | 上海北京大学微电子研究院 | A kind of failure positioning method of power device |
| CN111090029A (en) * | 2019-11-19 | 2020-05-01 | 江苏英锐半导体有限公司 | Triode detection method for collector emitter leakage in bipolar IC |
| CN111626999A (en) * | 2020-05-22 | 2020-09-04 | 广东电网有限责任公司 | Patch capacitor failure detection method and grinding and polishing method |
| CN111665403A (en) * | 2020-04-29 | 2020-09-15 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Failure point positioning method, device and system for laminated electronic component |
-
2007
- 2007-01-31 CN CN 200710063417 patent/CN101008663A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105301475A (en) * | 2015-09-22 | 2016-02-03 | 上海华虹宏力半导体制造有限公司 | Packaging chip back surface failure point locating method |
| CN107544014A (en) * | 2016-06-24 | 2018-01-05 | 上海北京大学微电子研究院 | A kind of failure positioning method of power device |
| CN106876296A (en) * | 2017-01-03 | 2017-06-20 | 航天科工防御技术研究试验中心 | A kind of semiconductor device failure localization method |
| CN111090029A (en) * | 2019-11-19 | 2020-05-01 | 江苏英锐半导体有限公司 | Triode detection method for collector emitter leakage in bipolar IC |
| CN111665403A (en) * | 2020-04-29 | 2020-09-15 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Failure point positioning method, device and system for laminated electronic component |
| CN111626999A (en) * | 2020-05-22 | 2020-09-04 | 广东电网有限责任公司 | Patch capacitor failure detection method and grinding and polishing method |
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