CN1009145B - 场致发射扫描俄歇电子显微镜 - Google Patents

场致发射扫描俄歇电子显微镜

Info

Publication number
CN1009145B
CN1009145B CN86100036A CN86100036A CN1009145B CN 1009145 B CN1009145 B CN 1009145B CN 86100036 A CN86100036 A CN 86100036A CN 86100036 A CN86100036 A CN 86100036A CN 1009145 B CN1009145 B CN 1009145B
Authority
CN
China
Prior art keywords
sample
tip
electron
field emission
auger
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CN86100036A
Other languages
English (en)
Chinese (zh)
Other versions
CN86100036A (zh
Inventor
约翰尼斯·乔治·贝德诺尔茨
詹姆斯·卡齐密尔茨·吉姆齐夫斯基
布鲁诺·赖尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of CN86100036A publication Critical patent/CN86100036A/zh
Publication of CN1009145B publication Critical patent/CN1009145B/zh
Expired legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/252—Tubes for spot-analysing by electron or ion beams; Microanalysers
    • H01J37/256—Tubes for spot-analysing by electron or ion beams; Microanalysers using scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
CN86100036A 1985-01-29 1986-01-03 场致发射扫描俄歇电子显微镜 Expired CN1009145B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP85100892.0 1985-01-29
EP85100892A EP0189498B1 (en) 1985-01-29 1985-01-29 Field-emission scanning auger electron microscope

Publications (2)

Publication Number Publication Date
CN86100036A CN86100036A (zh) 1986-07-23
CN1009145B true CN1009145B (zh) 1990-08-08

Family

ID=8193262

Family Applications (1)

Application Number Title Priority Date Filing Date
CN86100036A Expired CN1009145B (zh) 1985-01-29 1986-01-03 场致发射扫描俄歇电子显微镜

Country Status (8)

Country Link
US (1) US4698502A (enExample)
EP (1) EP0189498B1 (enExample)
JP (1) JPS61176044A (enExample)
CN (1) CN1009145B (enExample)
CA (1) CA1236592A (enExample)
DE (1) DE3570012D1 (enExample)
ES (1) ES8705995A1 (enExample)
IN (1) IN166497B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0252745A3 (en) * 1986-07-11 1990-01-24 AGENCY OF INDUSTRIAL SCIENCE & TECHNOLOGY MINISTRY OF INTERNATIONAL TRADE & INDUSTRY Relative displacement control apparatus
JPS63304103A (ja) * 1987-06-05 1988-12-12 Hitachi Ltd 走査表面顕微鏡
JPH0319961U (enExample) * 1988-06-20 1991-02-27
US5019707A (en) * 1989-03-23 1991-05-28 International Business Machines Corporation High speed waveform sampling with a tunneling microscope
DE3918249C1 (enExample) * 1989-06-05 1990-09-13 Forschungszentrum Juelich Gmbh, 5170 Juelich, De
US5047649A (en) * 1990-10-09 1991-09-10 International Business Machines Corporation Method and apparatus for writing or etching narrow linewidth patterns on insulating materials
US5260577A (en) * 1992-11-09 1993-11-09 International Business Machines Corp. Sample carriage for scanning probe microscope
JP3153366B2 (ja) * 1992-12-04 2001-04-09 日本電子株式会社 走査トンネル顕微鏡
EP0801310A4 (en) * 1994-12-27 2000-02-02 Japan Res Dev Corp Elementary analysis method by scanning probe microscope and ultra-short pulse high-voltage application method used for said method
JP2000106121A (ja) * 1998-07-29 2000-04-11 Jeol Ltd 電子顕微鏡あるいはその類似装置
US6399944B1 (en) * 1999-07-09 2002-06-04 Fei Company Measurement of film thickness by inelastic electron scattering
GB0002367D0 (en) * 2000-02-03 2000-03-22 Limited Spectrometer
SE0103781D0 (sv) * 2001-11-12 2001-11-12 Nanofactory Instruments Ab Mätanordning för elektronmikroskop
CN101361159B (zh) * 2005-12-02 2013-01-02 阿利斯公司 离子源、系统和方法
CN102496541B (zh) * 2011-12-08 2014-04-30 北京大学 一种场发射电子源发叉钨丝成型装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2151167C3 (de) * 1971-10-14 1974-05-09 Siemens Ag, 1000 Berlin Und 8000 Muenchen Elektronenstrahl-Mikroanalysator mit Auger-Elektronen-Nachweis
US3809899A (en) * 1972-08-17 1974-05-07 Tektronix Inc Electron-beam tube including a thermionic-field emission cathode for a scanning electron microscope
CH643397A5 (de) * 1979-09-20 1984-05-30 Ibm Raster-tunnelmikroskop.
US4550257A (en) * 1984-06-29 1985-10-29 International Business Machines Corporation Narrow line width pattern fabrication
US4618767A (en) * 1985-03-22 1986-10-21 International Business Machines Corporation Low-energy scanning transmission electron microscope

Also Published As

Publication number Publication date
CN86100036A (zh) 1986-07-23
ES8705995A1 (es) 1987-05-16
JPH0445930B2 (enExample) 1992-07-28
JPS61176044A (ja) 1986-08-07
ES551308A0 (es) 1987-05-16
EP0189498B1 (en) 1989-05-03
US4698502A (en) 1987-10-06
CA1236592A (en) 1988-05-10
EP0189498A1 (en) 1986-08-06
IN166497B (enExample) 1990-05-19
DE3570012D1 (en) 1989-06-08

Similar Documents

Publication Publication Date Title
CN1009145B (zh) 场致发射扫描俄歇电子显微镜
Young et al. The topografiner: an instrument for measuring surface microtopography
Nakayama et al. Photoemission measurement of extremely insulating materials: Capacitive photocurrent detection in photoelectron yield spectroscopy
Lartsev et al. Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge
Rose et al. Synchrotron X‐Ray Scanning Tunneling Microscopy: Fingerprinting Near to Far Field Transitions on Cu (111) Induced by Synchrotron Radiation
Li et al. 18/20 T high magnetic field scanning tunneling microscope with fully low voltage operability, high current resolution, and large scale searching ability
Saheed et al. Breakdown voltage reduction by field emission in multi-walled carbon nanotubes based ionization gas sensor
Baird et al. Time-resolved ion energy measurements using a retarding potential analyzer
Toth et al. Secondary electron imaging of nonconductors with nanometer resolution
Smerdov et al. Novel low-macroscopic-field emission cathodes for electron probe spectroscopy systems
French et al. Nonlinear transmission line based electron beam driver
Yasumatsu et al. Electronic structures of size-selected single-layered platinum clusters on silicon (111)-7× 7 surface at a single cluster level by tunneling spectroscopy
Mühl Scanning-tunneling-microscopy-based nanolithography of diamond-like carbon films
Persaud et al. Development of a compact neutron source based on field ionization processes
Tang et al. Neutron production from feedback controlled thermal cycling of a pyroelectric crystal
Fujieda et al. In situ observation of field emissions from an individual carbon nanotube by Lorenz microscopy
Liu et al. Analytical model of a gas phase field ionization source
Bhattacharya et al. Effects of gases on the field emission performance of silicon gated field emitter array
Hirata et al. Highly sensitive time-of-flight secondary-ion mass spectroscopy for contaminant analysis of semiconductor surface using cluster impact ionization
Toth et al. Imaging deep trap distributions by low vacuum scanning electron microscopy
Beamson et al. Observation of electrical conductivity during XPS analysis of organic oils
Guzmán de la Mata et al. Alternative method of using an electron beam for charge compensation during ultralow energy secondary-ion-mass spectroscopy experiments
Gallo et al. Electrification by contact charge exchange: a literature survey of microscopic models
Persaud et al. Ion implantation with scanning probe alignment
Vizir et al. Gridless, very low energy, high-current, gaseous ion source

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C13 Decision
GR02 Examined patent application
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CX01 Expiry of patent term