CN100595934C - Silicon germanium heterojunction optotransistor based on void underlay - Google Patents
Silicon germanium heterojunction optotransistor based on void underlay Download PDFInfo
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- CN100595934C CN100595934C CN200810070524A CN200810070524A CN100595934C CN 100595934 C CN100595934 C CN 100595934C CN 200810070524 A CN200810070524 A CN 200810070524A CN 200810070524 A CN200810070524 A CN 200810070524A CN 100595934 C CN100595934 C CN 100595934C
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Abstract
A SiGe hetero-junction phototransistor based on a virtual substrate relates to a hetero-junction phototransistor. The invention provides a SiGe hetero-junction phototransistor which can extremely increase the thicknesses of the Ge component of a SiGe layer in an absorbing region and the SiGe layer, has high response and wide response wavelength range, can freely adjust the Ge component and the thickness in each region, has strong design flexibility, is mainly used for the SiGe hetero-junction phototransistor based on a virtual substrate of the near infrared wave band incident light detection.The invention is provided with a silicon-based SiGe virtual substrate, the virtual substrate is orderly provided with a collector region, an absorbing region, a base region and an emitter region; thecollector region is a Si<1-y>Ge<y> layer, the absorbing region is a Si<1-z>Ge<z>(y is less than z which is less than or equal to 1) layer or a Si<1-z>Ge<z>/Si<1-y>Ge<y>(y is less than z which is lessthan or equal to 1) multi-periodic quantum well, the base region is a compression strain Si<1-x>Ge<x> layer (y is less than x which is less than or equal to 1), and the emitter region is a Si<1-y>Ge<y> layer; the collector region, the base region and the emitter region are provided with electrodes.
Description
Technical field
The present invention relates to a kind of heterojunction phototransistors, especially relate to a kind of preparation on the empty substrate of silica-based SiGe, can need carry out freely regulated a kind of heterojunction phototransistors to the germanium component and the thickness of collector region, uptake zone, base and emitter region according to different designs according to the theory of " energy band engineering ".
Background technology
Along with the continuous development of optical communication cause and the continuous developing of semiconductor new material, the photoelectron integrated technology that is interconnected as representative with optical fiber communication and light has proposed more and more urgent requirement to semiconductor photoelectronic device and circuit, one of them problem is exactly to be the basis as how ripe silicon process technology, utilize new principle and new material, on silicon substrate, directly make with silicon microelectronic technique compatibility, can be near infrared band effectively the silicon based opto-electronics detector and the integrated device thereof of the high performance price ratio of work.Silicon germanium heterojunction optotransistor (HPT) is a kind ofly to have internal gain but do not amplify the optotransistor of noise, is mainly used in optical detection and realizes opto-electronic conversion.It and existing silicon microelectronic technique compatibility are particularly suitable for ripe at present silicon germanium heterojunction transistor (HBT) integrated and realize the silicon based opto-electronics integrated circuit modules.
Si is an indirect bandgap material, and absorption coefficient is little, and energy gap is 1.12eV under the room temperature, to the not absorption of light of the important optical communication window of 1.3～1.55 μ m wave band.The energy gap of Ge is narrower, the absorption of light is limit can extend to more than the 1.55 μ m.Therefore, have high component S iGe alloy of certain thickness high-quality even pure Ge and become a desirable selection as the uptake zone of SiGe heterojunction phototransistors.But, because lattice mismatch big (4.18%) between Si and the Ge directly is difficult to obtain the thicker high component S iGe layer of high-quality on the Si substrate.Traditional SiGe heterojunction phototransistors usually adopts following several structures, and these structures still do not solve the contradiction of component and thickness in the SiGe layer.
1) adopts the Si/SiGe/Si heterojunction transistor structure, to the main depletion region between SiGe base and base and collector region of the absorption of light.Owing between collector region and base, there is not extra uptake zone, SiGe layer in the base is subjected to the restriction of critical thickness again, very thin and component is lower, be difficult to the photoresponse (J.L.Polleux of realization near infrared band, F.Moutier, A.L.Billabertet al, " A strained SiGe layer heterojunction bipolar phototransistor for short-range opto-mictowaveapplications ", International topical meeting on microwave photonics, 2003,113～116).
2) between collector region and base, increase Si
1-xGe
x/ Si Multiple Quantum Well is as the uptake zone, and compressive strain makes Si in Multiple Quantum Well
1-xGe
xBand gap diminishes, and average Ge component increases critical thickness, has increased effective absorption.But, Si
1-xGe
xGe component and Si in/the Si Multiple Quantum Well
1-xGe
xThe thickness of layer is owing to be subjected to the restriction that Si goes up epitaxy Si Ge layer critical thickness, must be controlled in the small range, to the still less (Z.Pei of the light absorption of near infrared band, C.S.Liang, L.S.Lai et al, High efficient 850nm and 1.310nm multiple quantum well SiGe/Si heterojunction phototransistors with 1.25plusGHz bandwidth (850nm), IEDM, 2002,297～300; Z.Pei, L.S.Lai, H.P.Hwang et al, Si
1-xGe
x/ Simulti-quantum well phototransistor for near-infrared opration, Physica E, 2003,16:554～557).
3) adopt multiply periodic Ge dots/Si as the uptake zone,, absorb limit and extend to 1.55 μ m because Ge quantum dot and Si form II type band structure.But aspects such as the density of Ge quantum dot, uniformity are difficult to control, effective quantum efficiency is very low, lower (the A.Elfving of responsiveness, G.V.Hansson, W.X.Ni, SiGe (Ge-dot) heterojunction phototransistors for efficientlight detection at 1.3-1.55 μ m, Physica E, 2003,16:528～532; W.H.Shi, R.W.Mao, L.Zhao et al, Fabrication of Ge nano-dot heterojunction phototransistors for improved light detection at 1.55 μ m, Chin.Phys.Lett., 2006,23 (3): 735～737).
4) with the SiGe/Si Multiple Quantum Well as the uptake zone, add speculum up and down at device and form resonant cavity, light is absorbed in resonant cavity back and forth, theoretical modeling shows that this structure can obtain the bigger quantum efficiency and the gain of light, but because device architecture complexity, difficulty in process, be difficult to realize, and SiGe layer component and thickness still are subjected to bigger restriction (Y.Q.Zhu in the uptake zone, Q.Q.Yang, Q.M.Wang, Resonant cavity SiGe Si MQW heterojunction phototransistor grown on theSIMOX substrate for 1.3 μ m operation, Electronic Components and Technology Conference, 1997,1199～1204).
Summary of the invention
The objective of the invention is to component and the existing contradiction of thickness at the SiGe layer of existing SiGe heterojunction phototransistors uptake zone, a kind of germanium component and SiGe layer thickness that can greatly increase uptake zone SiGe layer is provided, the responsiveness height, the response wave length wide ranges, can carry out free adjustment according to designing Ge component and the thickness of needs to each district, the design flexibility of device is strong, is mainly used in the silicon germanium heterojunction optotransistor based on empty substrate that the near infrared band incident light is surveyed.
The present invention is provided with the empty substrate of silica-based SiGe, and the germanium-silicon layer of the empty substrate of silica-based SiGe is relaxation Si
1-yGe
y(0＜y≤1) is provided with collector region, uptake zone, base and emitter region successively on the empty substrate of silica-based SiGe, be provided with SiO on the table top of collector region, base and emitter region
2Insulating barrier; Collector region is Si
1-yGe
yLayer, the uptake zone is Si
1-zGe
z(y＜z≤1) layer or Si
1-zGe
z/ Si
1-yGe
y(y＜z≤1) multicycle quantum well, the base is the Si of compressive strain
1-xGe
xLayer (y＜x≤1), the emitter region is Si
1-yGe
yLayer; On collector region, base and emitter region, establish electrode respectively.
The thickness of collector region is preferably 300～600 μ m, and the lattice match of the germanium-silicon layer of the empty substrate of collector region and silica-based SiGe makes collector region thickness not be subjected to the restriction of critical thickness and has higher germanium component.The periodicity of described multicycle quantum well is preferably 5～20, Si
1-zGe
zThe thickness of trap layer is preferably 5～10nm, Si
1-yGe
yThe thickness of building layer is preferably 15～25nm, and the thickness of base is preferably 30～60nm.So Si in the Multiple Quantum Well uptake zone
1-zGe
zThe germanium component and the thickness of trap layer can further improve, and promptly the uptake zone adopts Si
1-zGe
z/ Si
1-yGe
y(y＜z≤1) multicycle quantum well structure.The thickness of emitter region is preferably 100～300nm.When collector region and emitter region are the P type, the base is the N type, and the uptake zone is a non-doped layer, and the optotransistor of gained is a P-i-N-P type optotransistor; When collector region and emitter region are the N type, the base is the P type, and the uptake zone is a non-doped layer, and the optotransistor of gained is a N-i-P-N type optotransistor.
The present invention is produced on silica-based Si with collector region, uptake zone, base and the emitter region of silicon germanium heterojunction optotransistor successively
1-yGe
yOn (0＜y≤1) empty substrate, the lattice constant of empty substrate surface can be regulated by the germanium component.Make the Si of lattice match with it then thereon
1-yGe
yLayer makes collector region thickness not be subjected to the restriction of critical thickness and has higher germanium component as collector region.So Si in the Multiple Quantum Well uptake zone
1-zGe
zThe germanium component and the thickness of trap layer can further improve, and promptly the uptake zone adopts Si
1-zGe
z/ Si
1-yGe
y(y＜z≤1) multicycle quantum well structure.The base is the Si of compressive strain
1-xGe
xLayer (y＜x≤1).Make the optotransistor of two types of N-i-P-N and P-i-N-P according to collector region, uptake zone, base and emitter region doping type different.The difference extraction electrode forms three electrodes of silicon germanium heterojunction optotransistor on collector region, base and emitter region.
The present invention is a kind of SiGe optotransistor with high-responsivity of internal gain, is mainly used in optical detection.The designs degree of freedom is big, and operation wavelength is from the visible light to the near infrared band.Because the present invention is produced on the silicon germanium heterojunction optotransistor on the empty substrate of silica-based SiGe, Si in the Multiple Quantum Well uptake zone
1-zGe
zThe Ge component of trap layer can be according to the increase of empty substrate Ge component and can be brought up to maximum 1, and promptly pure Ge greatly improves the absorption coefficient of uptake zone.Compare with traditional silicon germanium heterojunction optotransistor, optotransistor of the present invention can obtain higher responsiveness and wideer response wave length scope.Simultaneously, each regional Ge component can be according to the designing requirement free adjustment, and designs is flexible.
Description of drawings
Fig. 1 is that the embodiment of the invention is based on Si base Si
0.5Ge
0.5The three-dimensional structure schematic diagram of the SiGe heterojunction phototransistors of empty substrate.
Fig. 2 is that the embodiment of the invention is based on Si base Si
0.5Ge
0.5The view in transverse section (emitter region in the above) of the SiGe heterojunction phototransistors of empty substrate.
Fig. 3 is that the embodiment of the invention is based on Si base Si
0.5Ge
0.5The view in transverse section (collector region in the above) of the SiGe heterojunction phototransistors of empty substrate.
Embodiment
Following examples will the present invention is further illustrated in conjunction with the accompanying drawings.
Referring to Fig. 1 and 2, at Si base Si
0.5Ge
0.5(thick by the bottom is the Si of 525 μ m and the Si of top thick complete deformation relaxation for 200nm to empty substrate
0.5Ge
0.5Composition) goes up the thick N type Si of epitaxial growth 400nm
0.5Ge
0.5Collector region is followed the Ge/Si of extension intrinsic thereon
0.5Ge
0.5Multiple Quantum Well is made the uptake zone, and Ge trap layer thickness is 5nm in the Multiple Quantum Well, Si
0.5Ge
0.5Barrier layer thickness is 20mn, and then the thick P type Si of extension 40nm
0.3Ge
0.7The base is the Si of N type above the base
0.5Ge
0.5Emitter region, thickness are 100nm.Etch the little table top of big table top in base and emitter region respectively, draw collector region, base and emitter region electrode and form N-i-P-N type optotransistor.Mark in Fig. 1 and 2 is respectively: 1, Si base Si
0.5Ge
0.5Empty substrate; 2, metal electrode; 3, N type Si
0.5Ge
0.5Collector region; 4, Ge/Si
0.5Ge
0.5The Multiple Quantum Well uptake zone; 5, P type Si
0.3Ge
0.7The base; 6, N type Si
0.5Ge
0.5The emitter region; 7, SiO
2Insulating barrier.
Similar to Example 1, collector region, base and emission doping type are changed to P type, N type and P type respectively, form a P-i-N-P type optotransistor.
Similar to Example 1, adopt N type polysilicon to replace N type Si
0.5Ge
0.5As the emitter region, obtain the SiGe heterojunction phototransistors of a polysilicon emissioning area.
Similar to Example 1, as shown in Figure 3, at Si
0.5Ge
0.5First extension N type emitter region, extension P type Si again on the empty substrate
0.3Ge
0.7Base, extension Ge/Si again
0.5Ge
0.5The Multiple Quantum Well uptake zone is Si above it
0.5Ge
0.5Collector region, the SiGe heterojunction phototransistors of formation reversed structure.
Claims (9)
1. based on the silicon germanium heterojunction optotransistor of empty substrate, it is characterized in that being provided with the empty substrate of silica-based SiGe, the germanium-silicon layer of the empty substrate of silica-based SiGe is relaxation Si
1-yGe
y, 0＜y≤1 is provided with collector region, uptake zone, base and emitter region successively on the empty substrate of silica-based SiGe, be provided with SiO on the table top of collector region, base and emitter region
2Insulating barrier; Collector region is Si
1-yGe
yLayer, the uptake zone is Si
1-zGe
zLayer, y＜z≤1 or Si
1-zGe
z/ Si
1-yGe
yThe multicycle quantum well, y＜z≤1, base are the Si of compressive strain
1-xGe
xLayer, y＜x≤1, emitter region are Si
1-yGe
yLayer; On collector region, base and emitter region, establish electrode respectively;
The lattice match of the germanium-silicon layer of the empty substrate of described collector region and silica-based SiGe.
2. the silicon germanium heterojunction optotransistor based on empty substrate as claimed in claim 1, the thickness that it is characterized in that collector region are 300～600 μ m.
3. the silicon germanium heterojunction optotransistor based on empty substrate as claimed in claim 1, the periodicity that it is characterized in that described multicycle quantum well is 5～20.
4. the silicon germanium heterojunction optotransistor based on empty substrate as claimed in claim 1 is characterized in that Si
1-zGe
zThe thickness of trap layer is 5～10nm.
5. the silicon germanium heterojunction optotransistor based on empty substrate as claimed in claim 1 is characterized in that Si
1-yGe
yThe thickness of building layer is 15～25nm.
6. the silicon germanium heterojunction optotransistor based on empty substrate as claimed in claim 1, the thickness that it is characterized in that the base is 30～60nm.
7. the silicon germanium heterojunction optotransistor based on empty substrate as claimed in claim 1, the thickness that it is characterized in that the emitter region is 100～300nm.
8. the silicon germanium heterojunction optotransistor based on empty substrate as claimed in claim 1 is characterized in that working as collector region and the emitter region is the P type, and the base is the N type, and the uptake zone is a non-doped layer, and the optotransistor of gained is a P-i-N-P type optotransistor.
9. the silicon germanium heterojunction optotransistor based on empty substrate as claimed in claim 1 is characterized in that working as collector region and the emitter region is the N type, and the base is the P type, and the uptake zone is a non-doped layer, and the optotransistor of gained is a N-i-P-N type optotransistor.
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| CN100595934C true CN100595934C (en) | 2010-03-24 |
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| CN105226129B (en) * | 2015-10-20 | 2017-02-01 | 北京工业大学 | SiGe/Si heterojunction photosensitive transistor detector |
| CN105810765B (en) | 2016-03-21 | 2017-08-11 | 京东方科技集团股份有限公司 | PIN photodiode, X-ray detection pixel, device and its detection method |
| CN107068784B (en) * | 2017-01-16 | 2019-07-19 | 中国科学院半导体研究所 | A kind of transverse structure germanium/silicon heterogenous avalanche photodetector and preparation method thereof |
| CN107046058A (en) * | 2017-04-13 | 2017-08-15 | 中国电子科技集团公司第二十四研究所 | A kind of heterojunction bipolar transistor that launch site is combined with strain Si and preparation method thereof |
| CN107240616B (en) * | 2017-06-12 | 2018-11-13 | 北京工业大学 | InGaAs/InP photistor infrared detectors with intrinsic layer structure |
| CN112420810A (en) * | 2020-11-10 | 2021-02-26 | 浙江大学杭州国际科创中心 | Charge injection device based on single-layer graphene/insulating layer/silicon/germanium structure |
| CN117637879B (en) * | 2024-01-26 | 2024-04-30 | 镭友芯科技(苏州)有限公司 | Germanium-based photoelectric device with high light absorptivity and low dark current and manufacturing method thereof |
Citations (1)
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| CN1828917A (en) * | 2005-01-18 | 2006-09-06 | 豪威科技有限公司 | Multilayered semiconductor substrate and image sensor formed thereon for improved infrared response |
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|---|---|---|---|---|
| CN1828917A (en) * | 2005-01-18 | 2006-09-06 | 豪威科技有限公司 | Multilayered semiconductor substrate and image sensor formed thereon for improved infrared response |
Non-Patent Citations (4)
| Title |
|---|
| Electronic properties of Si/SiGe/Ge heterostructures. Gerhard Abstreiter.Physica scripta,Vol.T68 . 1996 |
| Electronic properties of Si/SiGe/Ge heterostructures. Gerhard Abstreiter.Physica scripta,Vol.T68. 1996 * |
| New virtual substrate concept for vertical MOS transistors. Erich Kasper,et al.Thin solid films,Vol.336 . 1998 |
| New virtual substrate concept for vertical MOS transistors. Erich Kasper,et al.Thin solid films,Vol.336. 1998 * |
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