CN100592454C - Plasma display panel - Google Patents
Plasma display panel Download PDFInfo
- Publication number
- CN100592454C CN100592454C CN200480040188A CN200480040188A CN100592454C CN 100592454 C CN100592454 C CN 100592454C CN 200480040188 A CN200480040188 A CN 200480040188A CN 200480040188 A CN200480040188 A CN 200480040188A CN 100592454 C CN100592454 C CN 100592454C
- Authority
- CN
- China
- Prior art keywords
- electrode
- mentioned
- acicular crystals
- diaphragm
- dielectric film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
A plasma display panel (PDP) for ensuring a wall charge retaining performance on a protection film surface, and reducing a discharge starting voltage to reduce power consumption with a discharge variation at driving limited. The front panel of the PDP comprises a catalyst layer dispersedly formed on the front surface of a stripe-like display electrode formed on one surface of a glass substrate, and needle-like crystals consisting of graphite and formed on the catalyst layer so as to stand close together, dielectric films and protection films being formed so as to fill the gaps between the needle-like crystals. The needle-like crystals, a dielectric film material and a protection film material form a phase separating structure.
Description
Technical field
The present invention relates to plasma panel, especially, relate to the plasma panel of AC surface discharge type.
Background technology
The representational image display device of emissive type is CRT, yet plasma panel (PDP) is because it easily makes the speciality of the panel of large-scale and thin type, thereby obtains popularizing fast.PDP has DC (direct current) type and AC (interchange) type, and in each side such as reliability, picture qualities, the AC type is more excellent, and particularly three-electrode surface discharge type PDP popularizes.
The structure of three-electrode surface discharge type PDP is; the configuration that is parallel to each other of front substrate and back substrate devices spaced apart; in front on substrate face; a plurality of show electrodes form banded to (scan electrode and keep electrode); further; cover these electrode groups stacked dielectric film and diaphragm; on the other hand; on another face of substrate, a plurality of data electrodes form band shape overleaf, further; be covered with data electrode stacked dielectric film; on the dielectric film between adjacent data electrode, form spaced walls, further, be coated with fluorescent membrane on the surface of dielectric film and on the sidewall of spaced walls.Like this, form discharge cell on to the position of reporting to the leadship after accomplishing a task with the data electrode solid,, produce Discharge illuminating with display image by each discharge cell along with to each electrode application voltage at show electrode.
Here; in order to reduce resistance; most cases is; above-mentioned show electrode has the structure of stacked metal bus electrode on transparency electrode to adopting each electrode; in addition; said protection film plays the influence that protection show electrode, dielectric film are not subjected to the high-octane ion that produces because of discharge, and plays and make that secondary electron efficiently emits to reduce the effect of discharge voltage in the discharge cell.In addition, diaphragm also must possess the function that keeps the wall electric charge on its surface.
The material of this diaphragm is general to adopt characteristic good of anti-sputter the and the big MgO of secondary electron yield, and forms by thin-film technique.
In having the PDP of above-mentioned speciality, still there are two problems to need from now on to solve, that reduces power consumption exactly and suppresses the discharge deviation, in order to address this problem, studies from each side such as panel construction, driving method, materials.
For example, in patent documentation 1, record, on plasma panel,, on the dielectric film of substrate one side, stack gradually carbon nano-tube (making CNT) layer and MgO layer in front to form two-layer structure with postscript in order to improve secondary electron yield.So, by form the MgO layer on the CNT layer, so that MgO attached to the jog on CNT surface, compares with independent MgO diaphragm, its surface area increases, and secondary electron yield significantly increases.
Can think, increase the secondary electron yield of diaphragm by this way, be effective for reducing discharge ionization voltage, improving luminous efficiency.
Patent documentation 1: the spy opens 2001-222944 communique (the open communique of Japan Patent)
Summary of the invention
The problem that invention will solve
Yet; in the above described manner diaphragm is made among the PDP of two-layer structure; enough concavo-convex in order on the MgO laminar surface, to form to increase secondary electron yield; need on the CNT layer, form thin MgO layer; yet, in this case, because of MgO layer crawling spared; the secondary performance of each discharge cell can produce deviation, is easy to generate the discharge deviation during driving.Consequently, shown image quality decrease, this point are unfavorable.
The objective of the invention is to, the discharge deviation that produces when suppressing to drive in PDP when guaranteeing the wall charge holding performance on diaphragm surface reduces discharge ionization voltage simultaneously to reduce power consumption.
The mode that is used to deal with problems
Therefore; in PDP of the present invention; to and be covered with front substrate and the back substrate devices spaced apart arranged opposite that this electrode forms dielectric film and diaphragm successively in a side interarea configured electrodes; and the acicular crystals that configuration is made of conductive materials or semiconductor substance makes it connect at least one side in dielectric film and the diaphragm on thickness direction.
Here, preferably, the first type surface of acicular crystals and front substrate is generally perpendicularly erect, and at the stacked each other material that fills up diaphragm and dielectric film of acicular crystals.In addition, preferably, the material of dielectric film and acicular crystals form the phase separation structure thing.
Especially; its structure preferably; with with the upright state configuration acicular crystals of the interarea approximate vertical of front substrate, make it on thickness direction, connect dielectric film, and at the stacked each other material of dielectric film and the material of diaphragm of filling up of acicular crystals.
Acicular crystals preferably uses the graphite crystallization body.As the graphite crystallization body, be suitable for CNT, gnf (GNF), diamond-like-carbon (DLC).
Acicular crystals also can adopt the particle of four-footed shape.
The effect of invention
By means of PDP of the present invention, utilize the action of the acicular crystals that on thickness direction, connects dielectric film or diaphragm and dispose, the secondary amount that produces when high-octane particle or electron bombardment diaphragm can increase.Therefore, to the discharge ionization voltage that reduces PDP and when suppressing the discharge deviation and make contributions,, can reduce power consumption significantly because the luminous efficiency of PDP increases.
Here; if the first type surface of acicular crystals and front substrate is generally perpendicularly erect and at the stacked each other material that fills up diaphragm and dielectric film of acicular crystals; in addition; if the material of dielectric film and acicular crystals form the phase separation structure thing; emitting electrons efficiently just; therefore, the reduction effect of discharge ionization voltage is remarkable.
Especially; structure for the state configuration acicular crystals roughly erect with the interarea of front substrate so that its connecting on thickness direction dielectric film and acicular crystals fill up each other and the situation of the material of the material of layered dielectric film and diaphragm under; along with to electrode application voltage, electronics is conducted to discharge space from electrode via acicular crystals.So, to electrode application voltage the time, utilize electronics to be conducted to the effect of discharge space, also can reduce discharge ionization voltage and discharge deviation via acicular crystals.
Here; front end at acicular crystals is exposed under the situation of discharge space; electronics directly is conducted to discharge space; yet; be not exposed to discharge space and be buried under the situation in the diaphragm at the front end of acicular crystals; usually be formed with the gap each other owing to constitute the crystallization of diaphragm in diaphragm, electronics also is conducted to discharge space from the front end of acicular crystals by this gap.Therefore, under the front end of acicular crystals was buried in situation in the diaphragm, durability was better.
On the other hand, in PDP of the present invention, in dielectric film,, therefore, in this zone, guaranteed the wall charge holding performance on diaphragm surface owing to the insulating properties of having guaranteed in the zone beyond the position that connects acicular crystals between electrode and the diaphragm.
In addition, concavo-convexly do not come enlarged surface long-pending, therefore, do not need diaphragm is done thin owing to do not need to allow the diaphragm surface have.Therefore, can eliminate the formation inequality of diaphragm, also can suppress the generation of secondary aberrations in property.
Thus, according to the present invention, when suppressing the discharge deviation, can guarantee the wall charge holding performance and reduce discharge ionization voltage.
Acicular crystals preferably uses the graphite crystallization body.
In this case, if make between dielectric film and graphite crystallization body or accompany a kind of from Fe, Co and Ni, choosing between electrode and the graphite crystallization body or metal level that multiple metal constitutes, then, can easily generate the needle-like graphite crystallization body that is upright state with real estate by forming metal level on the dielectric film on the substrate or on the electrode surface, on this metal level, piling up this method of graphite crystallization body.Particularly, can under lower temperature, generate graphite crystallization body by adopting with the plasma CVD method of ethene as unstrpped gas with the substrate approximate vertical.
In addition, by changing the formation form of metal level, can adjust the bundle size and the surface density thereof of graphite crystallization body.
The graphite crystallization body uses CNT, gnf (GNF), diamond-like-carbon (DLC).
If acicular crystals adopts the particle of four-footed shape, then utilize the method for this particle of coating on dielectric film or electrode surface, can easily dispose the acicular crystals that is vertical state with real estate.
The particle of four-footed shape preferably uses ZnO.
Comprise in being disposed at the electrode of front substrate under the right situation of show electrode, if dispose acicular crystals on right side of show electrode or both sides, the effect that then above-mentioned discharge ionization voltage reduces is remarkable.
In being disposed at the electrode of front substrate, comprise show electrode to and be formed under the situation of the electron emission electrode between this show electrode, even on electron emission electrode, dispose acicular crystals, also can obtain the effect that discharge ionization voltage reduces.
In this case, preferably, keeping when discharge, on show electrode, applying and electron emission electrode is remained on earthing potential or floating potential when keeping voltage.
In the present invention, preferably, use the metal oxide that from MgO, CaO, SrO and BaO, chooses or the mixture of these metal oxides to form diaphragm.
Description of drawings
Fig. 1 is the perspective view of major part of structure of the PDP of expression embodiments of the present invention.
Fig. 2 is the figure of structure of the front panel 10 of expression execution mode 1.
Fig. 3 is the figure that keeps the discharge pattern in when discharge among the PDP of expression execution mode 3.
Fig. 4 is the figure of structure of the front panel 10 of expression execution mode 1.
Fig. 5 is the figure of structure of the front panel 10 of expression execution mode 1.
Fig. 6 is the figure of structure of the front panel 10 of expression execution mode 2.
Fig. 7 is the figure of structure of the front panel 10 of expression execution mode 3.
Fig. 8 is the figure of structure of the front panel 10 of expression execution mode 3.
Fig. 9 is the figure of the discharge pattern of PDP when keeping discharge of expression execution mode 3.
Figure 10 is the figure of structure of front panel 10 in the variation of expression execution mode 3.
Figure 11 is the perspective view of major part of the front panel 10 of expression execution mode 4.
Figure 12 is the figure of structure of the front panel 10 of expression execution mode 5.
The explanation of symbol
10 front panels
11 front substrates
12 show electrodes are right
13 dielectric films
14 diaphragms
15 acicular crystals
16 catalyst layers
20 back panel
21 back substrates
22 data electrodes
23 dielectric films
24 spaced walls
25 fluorescent membranes
30 discharge spaces
40 acicular crystal particles
100?PDP
121 scan electrodes
121 show electrodes
122 keep electrode
123 electron emission electrodes
141 diaphragm lower floors
142 diaphragm upper stratas
Embodiment
With reference to the description of drawings embodiments of the present invention.
(execution mode 1)
Fig. 1 is the perspective view of the major part of the structure of PDP in expression an embodiment of the invention.
Among this PDP100, front panel 10 and back panel 20 fit together.
The structure of front panel 10 is; on a face of the front substrate 11 that forms by glass plate; (scan electrode 121 and keep electrode 122) forms band shape to a plurality of show electrodes to 12, further, is covered with stacked first dielectric film 13 of these electrode groups and diaphragm 14.
On the other hand, the structure of back panel 20 is, on a face of the back substrate 21 that forms by glass plate, a plurality of data electrodes 22 form band shape, further, are covered with data electrode 22 stacked second dielectric films 23, on this second dielectric film 23, between data electrode 22, form spaced walls 24, further, be coated with fluorescent membrane 25 on the surface of dielectric film 23 and on the sidewall of spaced walls 24.
Above-mentioned front substrate 11 and back substrate 21 are spaced from each other the compartment of terrain configured in parallel across spaced walls 24, show electrode to 12 and the data electrode 22 solids position of reporting to the leadship after accomplishing a task on form discharge cell.
Among this PDP, when driving,, scan electrode 121 and data electrode 22 are applied voltage write discharge and storage wall electric charge with generation at the discharge cell that will light, after this, to scan electrode 121 with keep electrode 122 and alternately apply and keep pulse.Thus, produce at the discharge cell that writes discharge selectively and keeping discharge and carry out luminously, demonstrate image.
The material of dielectric film 13 adopts medium glass, SiO
2
The mixture more than 2 kinds (for example, the mixture of MgO and CaO) that the material of diaphragm 14 adopts metal oxide such as MgO, CaO, SrO, BaO or selects from these oxides.
(structure of front panel 10)
Fig. 2,4 (a), the 5th, the sectional pattern figure of the structure of the front panel 10 of expression present embodiment.
Fig. 2, Fig. 4 (a) though, there is difference in front panel 10 shown in Figure 5 in trickle part; but they all are the state configuration acicular crystals 15 to erect on the surface of first dielectric film 13, and each acicular crystals 15 connects diaphragm 14 on thickness direction.This acicular crystals 15 is formed by conductive materials or semiconductor substance.
In addition, when the surface of show electrode 121,122 was observed, acicular crystals 15 was configured to be dispersed on the surface of first dielectric film 13.
In other words, acicular crystals 15 is dispersed on first dielectric film 13, and fill with the material of diaphragm 14 in its gap, and acicular crystals 15 and diaphragm 14 form phase separation structure.
In addition, in the example shown in Fig. 2,4 (a), 5, though be that the surperficial integral body that is covered with first dielectric film 13 is provided with acicular crystals 15, yet, also can be only at the position configuration acicular crystals 15 of the central part that is equivalent to discharge cell.
As Fig. 2, shown in Figure 3, across catalyst layer 16, and this catalyst layer 16 is materials of the conduct nuclear that is provided with in order to generate the needle-like graphite particle during fabrication, adopts metals such as Ni, Fe, Co between the acicular crystals 15 and first dielectric film 13.
As the dispersing morphology of acicular crystals 15 on first dielectric film 13, be to be evenly dispersed on first dielectric film 13 in the example of Fig. 2, yet, in Fig. 4,5 example, on first dielectric film 13, there is the zone of acicular crystals 15 and do not have staggered mixing of zone of acicular crystals 15.Particularly, in Fig. 4 (b), among the zone that does not have acicular crystals 15, be scattered with the zone that has acicular crystals 15, in Fig. 4 (c), have the zone of acicular crystals 15 and do not exist the zone of acicular crystals 15 to form band shape.
In addition; at the front panel 10 shown in Fig. 2,4 (a), the leading section of acicular crystals 15 is projected into discharge space 30 from the surface of diaphragm 14, yet; as long as the leading section of acicular crystals 15 is near the near surface of diaphragm 14, it also can not be projected into discharge space 30.
(manufacture method of front panel 10)
At first, the method for making above-mentioned Fig. 2,4 front panel 10 is described.
On first dielectric film 13, utilize sputtering method or electron beam evaporation plating method to form the material (metals such as Ni, Fe, Co) of catalyst layer 16.
When forming this catalyst layer 16, on whole of front panel shown in Figure 2 10, form catalyst layer 16.In this case, the thickness of catalyst layer 16 forms the following or 2～5nm thickness of 10nm, thus, in fact becomes the discontinuous membrane stage of island.On the other hand, under the situation of front panel shown in Figure 4 10, composition forms catalyst layer 16.
Method as composition, the method that both can adopt the mask behind the regional opening that only will form catalyst layer 16 to come composition also can adopt following method, promptly, steeped landform becomes after the material of catalyst layer 16 on whole, and composition is removed the part beyond the zone that will form catalyst layer 16.
Then, in vacuum technology, on catalyst layer 16, generate the graphite particle of needle-like.At this moment, graphite particle is grown up, on catalyst layer 16, be vertically formed the acicular crystals 15 that forms by graphite.
For example, in adopting the plasma CVD of ethene as unstrpped gas, after generating graphite particle under about 400 ℃ substrate temperature, only generate the pencil CNT that diameter phi is 200nm selectively on catalyst layer 16, the diameter of bundle is about 1～5 μ m.
Here, if the state of the temperature of suitable setting substrate, speed of separating out, base material etc. are separated out condition, just can be adjusted at density that forms CNT on the catalyst layer 16 and the dispersion that forms appropriateness.
Therefore, even forming under the situation of catalyst layer 16 on whole as shown in Figure 2,, CNT moderately is dispersed on this catalyst layer 16 owing in fact form island as mentioned above.
On the other hand, composition forms under the situation of catalyst layer 16 as shown in Figure 4, by size and the distribution of controlling each catalyst layer 16, can be controlled at the size of the CNT bundle of growing up on first dielectric film 13.
For example, shown in Fig. 4 (b), make that the size φ of catalyst layer 16 dispersions and each catalyst layer 16 is under the situation of 3 μ m, on each catalyst layer 16, be the CNT that pencil has generated 30～60 φ 200nm.
Then, on the front substrate 11 that forms acicular crystals 15, form diaphragm 14.Can pile up MgO by sputtering method or EB vapour deposition method and form this diaphragm 14.
In this operation, on first dielectric film 13, to be soaked in the material of the form accumulation diaphragm 14 in acicular crystals 15 gap each other.
Therefore, the material of the acicular crystals 15 of setting and diaphragm 14 forms phase separation structure.
The method of the front panel 10 of making above-mentioned Fig. 5 then, is described.
Then, in this diaphragm lower floor 141, utilize mask etching to form blind hole is exposed to catalyst layer 16 with formation the degree of depth.The diameter phi of blind hole is 5 μ m for example.
Secondly, in vacuum technology, on catalyst layer 16, generate the needle-like graphite particle.At this moment, produce graphite particle hardly on the surface of diaphragm lower floor 141, only optionally generate graphite particle on the catalyst layer 16 that is positioned on the bottom surface of blind hole, the acicular crystal of graphite particle is with respect to front substrate 11 vertical-growths.
Secondly, on the surface of diaphragm lower floor 141, utilize sputtering method or EB vapour deposition method to pile up MgO to form diaphragm upper strata 142.In this operation, the material on diaphragm upper strata 142 enters in the blind hole and the space of graphite particle, and consequently, the acicular crystals 15 of setting and the material on diaphragm upper strata 142 form phase separation structure.
(using the effect of front panel 10 gained of present embodiment)
In addition, because the surface of acicular crystals 15 and front substrate 11 on end generally perpendicularly, therefore, can carry out ion and energy exchange efficiently and absorb primary electron to launch secondary electron well.This point is illustrated with reference to Fig. 3.
Fig. 3 is the figure that is illustrated in the discharge pattern (pattern of discharging current) when keeping discharge among the PDP that possesses above-mentioned front panel 10.
As shown in the drawing, keeping when discharge, at the acicular crystals on the scan electrode 121 15 with keep between the acicular crystals 15 on the electrode 122, discharge pattern 35 is circular-arc.Therefore, because the primary electron of discharge generation or ion be with the angle incident approximately perpendicular to diaphragm 14 surfaces, so secondary electron emits efficiently from the surface of diaphragm 14.Thus, can obtain higher secondary electron yield.
In addition, when the front end of acicular crystals 15 exposes under the situation of discharge space 30, primary electron or ion impact this part of exposing effectively, further, secondary electron impacts in the mutual gap of acicular crystals 15, and interlock type is launched a large amount of secondary electrons.
Especially, be under the situation of the such graphite particle of CNT or DLC at acicular crystals 15, can obtain high electron emission coefficiency.
As mentioned above; front panel 10 by means of present embodiment utilizes the effect of acicular crystals 15, can obtain because of improving the effect that discharge ionization voltage that the secondary effect causes reduces; thus, need on the surface of diaphragm 14 itself, not form concavo-convex.That is,, also can obtain corresponding effect even form diaphragm 14 thicker.
Thus, the thickness by guaranteeing diaphragm 14 and eliminate inhomogeneous when forming diaphragm 14 can also suppress the deviation of secondary performance, makes the display quality homogenizing.
So, the PDP by means of the front panel 10 of present embodiment can suppress the deviation of discharging, and can guarantee the wall charge holding performance simultaneously and reduce discharge ionization voltage.
In addition, each acicular crystals 15 is being supported by diaphragm 14 mechanical types around it, therefore, is stable for machinery variation and variations in temperature.
In addition; under the situation that the leading section of acicular crystals 15 is given prominence to from diaphragm 14 surfaces; the electron emission capability height; yet; under the situation that acicular crystals 15 is not given prominence to from diaphragm 14 surfaces; the endurance quality excellence of diaphragm 14, and mechanical stability and also fine to the aspect of the stability of variations in temperature.
In addition, in the present embodiment, because the acicular crystals that with CNT is representative as mentioned above extends on thickness direction, therefore, can fully obtain the emission effciency of secondary electron, yet, otherwise under the situation of the situation of the surperficial configured in parallel of CNT and dielectric film or the unordered configuration of CNT, the primary electron of discharge generation sees through thin CNT layer, can not fully obtain the emission effciency of secondary electron, discharge ionization voltage can produce deviation.In addition, in this case since the CNT film be generally porous and do not have reinforcement material, therefore, the CNT film is unstable on machinery and variations in temperature.
(the formation density of acicular crystals 15)
Investigate the area ratio (the formation density of acicular crystals 15) that the zone that forms acicular crystals 15 accounts for the surperficial entire area of first dielectric film 13.
Even the formation density of acicular crystals 15 is very little, discharge ionization voltage is step-down also, and it is big more to form density, the decline of discharge ionization voltage is also big more, therefore, fully obtaining under the prerequisite of effect of the present invention, the formation density of acicular crystals 15 is preferably more than 30%.
On the other hand, when the formation density of acicular crystals 15 was excessive, diaphragm 14 lip-deep wall charge holding performances descended, and therefore, the formation density of acicular crystals 15 is preferably below 90%.
In addition, the formation density of acicular crystals 15 is in the scope more than 60%, and discharge ionization voltage can not produce bigger poor, and therefore, the formation density of acicular crystals 15 is preferably below 60%.
(execution mode 2)
The overall structure of PDP is identical with execution mode 1.
Fig. 6 is the perspective view of major part of the front panel 10 of expression execution mode 2.
These front panel 10 structures are that on a face of the front substrate 11 that is formed by glass plate, a plurality of show electrodes form band shape to 12, further, cover stacked first dielectric film 13 of these electrode groups and diaphragm 14.And, on the surface of first dielectric film 13, the acicular crystals particle 40 of four-footed shape being set, each acicular crystal particle 40 is formed by conductive materials or semiconductor substance, connects diaphragm 14.
Lip-deep each the acicular crystal particle 40 that is configured in first dielectric film 13 is four-footed shape, therefore has 4 root thorns, and 3 root thorns wherein and the surface of first dielectric film 13 join, and the Surface Vertical ground of 1 root thorn and this first dielectric film 13 is erect.Therefore, acicular crystal is upright state on the surface of first dielectric film 13.
In addition, when the surface of first dielectric film 13 was observed, acicular crystal particle 40 disperseed to be arranged on the surface of first dielectric film 13.
In other words, acicular crystal particle 40 is dispersed on first dielectric film 13, and acicular crystal particle 40 and diaphragm 14 formation phase separation structures are filled in its gap with the material of diaphragm 14.
Can adopt the concrete example of the ZnO particle of four-footed shape as acicular crystal particle 40.
The ZnO particle of four-footed shape is to be made by carrying out thermal chemical reaction as the organo-metallic compound of raw material, and it has semi-conductive character.Known zinc oxide acicular crystal, the trade name " パ Na テ ト ラ (Panatetra) " that the electric industry of Panasonic is arranged in commercial goods, its size are that the length of for example pin is that the thickness of about 15 μ m, pin is about 500nm.
In addition, the summit of the pin of acicular crystal particle 40 can highlight from the surface of diaphragm 14, also can be not highlight from the surface of diaphragm 14.
By means of the front panel 10 of present embodiment, can obtain the effect identical with above-mentioned execution mode 1.
That is, because generally perpendicularly erect on the thorn of acicular crystal particle 40 and the surface of front substrate 11, therefore, the secondary electron yield of diaphragm 14 improves.In addition, each acicular crystal particle 40 by diaphragm 14 mechanical support around it, therefore, is stable for mechanicalness variation and variations in temperature.
The manufacture method of the front panel 10 of present embodiment is described.
Be ready to acicular crystal particle 40 with four-footed shape and be distributed to coating in the alcohol solvent, its ratio preferably more than 30%, below 90%, better below 60%.
In addition; after decentralized configuration acicular crystal particle 40, form diaphragm 14 successively as mentioned above; this is desirable being convenient to manufacture view; yet, also can adopt following method in the present embodiment, promptly; at first be formed on the diaphragm lower floor that is formed with recess on the predetermined formation position of acicular crystal particle 40; after this, configuration needle-like crystalline particle 40 forms the diaphragm upper strata in this recess.
(execution mode 3)
The overall structure of PDP is identical with execution mode 1.
Fig. 7, Fig. 8 are the figure of structure of the front panel 10 of expression present embodiment.
Fig. 7 (a), Fig. 8 (a) are the profile schema diagrams of front panel 10, and Fig. 7 (b), (c) are the plane model figures of this front panel 10.In addition, Fig. 8 (b) is the part enlarged drawing of Fig. 8 (a).
Shown in Fig. 7 (a), Fig. 8 (a), with upright state configuration acicular crystals 15, each acicular crystals 15 connects first dielectric film 13 on the surface of show electrode 121,122.Form this acicular crystals 15 with conductive materials or semiconductor substance.At front panel shown in Figure 7 10, the leading section of acicular crystals 15 is exposed to the discharge space from the surface of diaphragm 14, and is relative therewith; in Fig. 8; the leading section of acicular crystals 15 is arranged among the diaphragm 14 and is not exposed to discharge space, and this point is different, and others are identical.
In addition, when the surface of show electrode 121,122 was observed, shown in Fig. 7 (b) or Fig. 7 (c), acicular crystals 15 was set to be dispersed on the surface of show electrode 121,122.
In other words, acicular crystals 15 is dispersed on the show electrode 121,122, and fill with the material of dielectric film 13 and the material of diaphragm 14 in the crack betwixt, and acicular crystals 15 and dielectric film 13 and diaphragm 14 form phase separation structure.
In addition, in Fig. 7 (b), acicular crystals 15 scatters and exists, and in Fig. 7 (c), acicular crystals 15 forms banded, yet, either way be that acicular crystals 15 is dispersed on the show electrode 121,122.
In addition, the whole surface that is covered with show electrode 121,122 in the example shown in Fig. 7 (b), (c) is provided with acicular crystals 15, yet, also can be only at the position configuration acicular crystals 15 of the middle body that is equivalent to discharge cell.
As Fig. 7, shown in Figure 8, between acicular crystals 15 and show electrode 121,122, clip catalyst layer 16.Explanation is identical in catalyst layer 16 and the execution mode 1, is the material of the conduct nuclear that is provided with in order to generate the needle-like graphite particle during fabrication, adopts metals such as Ni, Fe, Co.
(utilizing the effect of the front panel 10 of present embodiment)
Further, on the surface of show electrode 121,122, owing to the acicular crystals 15 that is made of conductive materials or semiconductor substance is set so that dielectric film 13 connects the thickness direction of acicular crystals 15, therefore, when PDP drives, along with applying voltage between show electrode 121,122, electronics is conducted to discharge space 30 from electrode 121,122 via acicular crystals 15.
Here; shown in Fig. 7 (a); front end at acicular crystals 15 is exposed under the situation of discharge space 30 from diaphragm 14 surfaces; electronics directly is conducted to discharge space 30 from acicular crystals 15; yet; shown in Fig. 8 (b); even not exposing discharge space 30, the front end of acicular crystals 15 is buried under the situation in the diaphragm 14; general for the diaphragm 14 that constitutes by MgO; owing to constitute the crystalline solid 14a of the MgO of this diaphragm 14 and be column and form gap 14b each other, supply with electronics by this gap 14b to discharge space 30 from the front end of acicular crystals 15 at this MgO crystalline solid 14a.In addition, also exist with electronics be injected into MgO crystalline solid the conduction band and produce the situation of above-mentioned effect.
Therefore, under the situation of Fig. 7, Fig. 8, when applying voltage between show electrode 121,122, owing to all be to supply with electronics by acicular crystals 15 to discharge space 30, therefore, discharge ionization voltage descends.
On the other hand, at dielectric film 13, in the zone beyond the position that acicular crystals 15 connects,, therefore, on this zone, guaranteed the wall charge holding performance on diaphragm 14 surfaces owing to the insulating properties of having guaranteed between electrode 121,122 and the diaphragm 14.
In addition, because acicular crystals 15 is generally perpendicularly erect with the surface of front substrate 11, therefore, can carry out the exchange of ion and energy efficiently and absorb primary electron to launch secondary electron well.
Fig. 9 is the figure that keeps the discharge pattern (pattern of discharging current) in when discharge, and is identical with above-mentioned Fig. 3, and when keeping discharge, at the acicular crystals on the scan electrode 121 15 with keep between the acicular crystals 15 on the electrode 122, discharge pattern 35 is circular-arc.Therefore, since the primary electron of discharge generation or ion with angle incident, so launch secondary electron efficiently from the surface of diaphragm 14 approximately perpendicular to diaphragm 14 surfaces.Thus, can obtain higher secondary electron yield.
In addition, front end at acicular crystals 15 is exposed under the situation of discharge space 30, and primary electron or ion impact this part of exposing effectively, further, this secondary electron impacts in the mutual gap of acicular crystals 15, and interlock type is launched a large amount of secondary electrons.
Especially, be under the situation of the such graphite particle of CNT or DLC at acicular crystals 15, can obtain higher electric field transmitted coefficient.
Thus, the thickness by guaranteeing diaphragm 14 is also eliminated inhomogeneous when forming diaphragm 14, can suppress the deviation of secondary performance, and make the display quality homogenizing.
So, the PDP by means of the front panel 10 of present embodiment can suppress the deviation of discharging, and guarantees the wall charge holding performance simultaneously and reduces discharge ionization voltage.
In addition, each acicular crystals 15 is to be supported by dielectric film 13 and diaphragm 14 mechanical types around it, therefore, is stable for machinery variation and variations in temperature.
If the mode of comparison diagram 7 and the mode of Fig. 8; the mode electron emission capability of Fig. 7 is higher; and the mode of Fig. 8 since acicular crystals 15 be not exposed in the discharge space 30, therefore, the good and mechanical stability of the durability of diaphragm 14 and also be good to the stable aspect of variations in temperature.
(the formation density of the lip-deep acicular crystals 15 of show electrode 121,122)
Investigation forms the ratio (the formation density of acicular crystals 15) of the area of acicular crystals 15 with respect to the surperficial entire area of show electrode 121,122.
Even the formation density of acicular crystals 15 is very little, discharge ionization voltage is step-down also, yet, it is big more to form density, and the decline of discharge ionization voltage is also big more, therefore, fully obtaining under the prerequisite of effect of the present invention, the formation density of acicular crystals 15 is preferably more than 30%.
On the other hand, because the formation density of acicular crystals 15 is when excessive, the wall charge holding performance step-down on diaphragm 14 surfaces, therefore, the formation density of acicular crystals 15 is preferably below 90%.
In addition, because the formation density of acicular crystals 15 is in the scope more than 60%, the discharge ionization voltage difference is little, and therefore, the formation density of acicular crystals 15 is preferably below 60%.
(manufacture method of the front panel 10 of present embodiment)
Then, in vacuum technology, on catalyst layer 16, generate the needle-like graphite particle.At this moment, only on catalyst layer 16, generate graphite particle selectively, form the acicular crystals 15 that constitutes by graphite.
Here, if the state of the temperature of suitable setting substrate, speed of separating out, base material etc. are separated out condition,, also can adjust the formation density of acicular crystals 15 by forming the distribution density of catalyst layer 16 on the surface of adjusting electrode 121,122.
Then, on the front substrate 11 that is formed with acicular crystals 15, form dielectric film 13, form diaphragm 14 thereon.
Can be by for example piling up SiO with sputtering method or EB vapour deposition method
2Form dielectric film 13.Perhaps, also can form by piling up low melting point glass material.
Can form diaphragm 14 by piling up MgO with sputtering method or EB vapour deposition method.
In this operation, the material of the material of dielectric film 13 and diaphragm 14 is to pile up in the mode that is soaked in the mutual gap of acicular crystals 15 on show electrode 121,122.
Therefore, the material of the material of the acicular crystals 15 of setting and dielectric film 13 and diaphragm 14 forms phase separation structure.
As mentioned above, from the angle that is easy to make, be preferably in after the decentralized configuration acicular crystals 15; form dielectric film 13 and diaphragm 14 successively, yet, with the method for the front panel 10 of making above-mentioned Fig. 5 in the same manner; also can consider following method; that is, at first, on whole, form dielectric film 13; part on the show electrode 121,122 of this dielectric film 13 forms blind hole; after this, configuration acicular crystals 15 forms diaphragm 14 in this blind hole.
(the high situation of Xe concentration of discharge gas)
Among the PDP, the Xe concentration height in the general discharge gas then luminous efficiency rises, but discharge ionization voltage uprises.To this, when on show electrode, forming the phase separation structure body of acicular crystals and dielectric film and diaphragm, even Xe concentration height also can suppress its discharge ionization voltage.
Therefore, possess as mentioned above among the PDP of phase separation structure body,, can suppress discharge ionization voltage lower and obtain high luminous efficiency by setting Xe concentration higher.Consequently, can significantly reduce the power consumption of PDP.
For example, on electrode, do not dispose among the PDP of structure in the past of acicular crystals, when adopting under the situation of 5%Xe+95%Ne as discharge gas, the measured value of discharge ionization voltage is 180V, yet, when adopting under the situation of 10%Xe+90%Ne as discharge gas, the measured value of discharge ionization voltage is 220V.
Relative therewith, adopting acicular crystals to form in the panel of phase separation structure body, even adopt 10%Xe+90%Ne as discharge gas, the measured value of discharge ionization voltage also suppresses to be lower 180V.
(variation)
In above-mentioned PDP100, though be configuration acicular crystals 15 on both electrode surfaces of show electrode 121,122, yet, also only dispose acicular crystals 15 on the electrode show electrode 121,122 in, thus, the structure of panel becomes simpler.
For example, in front panel shown in Figure 10 10, acicular crystals 15 is erected on the surface of keeping electrode 122, forms the phase separation structure body, on the surface of scan electrode 121, do not have acicular crystals 15 with first dielectric film 13 and diaphragm 14.
So, if only being set, acicular crystals 15 forms phase separation structure on a show electrode, compare with the situation that acicular crystals 15 is set on two show electrodes, though deviation can occur in the discharge pattern when keeping discharge, yet, for discharge ionization voltage, can obtain roughly the same result.
(execution mode 4)
The overall structure of PDP is identical with execution mode 1.
Figure 11 is the perspective view of major part of the front panel 10 of execution mode 4.
The structure of this front panel 10 is that on a face of the front substrate 11 that is formed by glass plate, a plurality of show electrodes form band shape to 12, further, cover stacked first dielectric film 13 of these electrode groups and diaphragm 14.And, the acicular crystals particle 40 of configuration four-footed shape on the surface of show electrode 121,122, each acicular crystal particle 40 connects dielectric film 13, forms each acicular crystal particle 40 by conductive materials or semiconductor substance.
Be configured in show electrode 121,122 lip-deep each acicular crystal particle 40 and be four-footed shape, have 4 root thorns, wherein the surface of 3 root thorns and show electrode 121,122 joins, and 1 root thorn and this electrode surface are vertically erect.Therefore, acicular crystal is the state of setting on the surface of show electrode 121,122.
In addition, when the surface of show electrode 121,122 was observed, acicular crystal particle 40 decentralized configuration were on the surface of show electrode 121,122.
In other words, the material filling that acicular crystal particle 40 is dispersed on the show electrode 121,122 and the material and the diaphragm 14 of dielectric film 13 are used in the crack betwixt, acicular crystal particle 40 and dielectric film 13 and diaphragm 14 form phase separation structures.
Can adopt the concrete example of the ZnO particle of the four-footed shape of describing in the execution mode 2 as acicular crystal particle 40.
In addition, the summit of the thorn of acicular crystal particle 40 both can be exposed from the surface of diaphragm 14, also can be buried under the surface of diaphragm 14.
By means of the front panel 10 of present embodiment, can obtain the effect identical with above-mentioned execution mode 3.
Promptly; when between show electrode 121,122, applying voltage; owing to electronics is conducted to discharge space 30 by acicular crystal particle 40; therefore; discharge ionization voltage descends; on the other hand, at dielectric film 13, guaranteed the wall charge holding performance on diaphragm 14 surfaces in the zone beyond the position that acicular crystal particle 40 connects.In addition, because the surperficial approximate vertical of the thorn of acicular crystal particle 40 and front substrate 11 is erect, therefore, secondary electron yield improves.In addition, each acicular crystal particle 40 is being supported by dielectric film 13 and diaphragm 14 mechanical types around it, therefore, is stable for machinery variation and variations in temperature.
The manufacture method of the front panel 10 of present embodiment is described.
Be ready to acicular crystal particle 40 with four-footed shape and be dispersed in coating in the alcohol solvent, it is coated on scan electrode 121 and keeps on the electrode 122, make its dry back remove solvent.Utilize this operation, at scan electrode 121 with keep on the electrode 122, and utilize van der waals force or electrostatic force attached to scan electrode 121 with keep on the electrode 122 acicular crystal particle 40 decentralized configuration.
Here, can wait by the content of adjusting acicular crystal particle 40 in the above-mentioned coating and adjust acicular crystal particle 40 and be distributed in scan electrode 121 and keep density on the electrode 122.
On the panel surface of coating needle-like crystalline particle 40, form first dielectric film 13 and diaphragm 14 successively to cover scan electrode 121 and to keep electrode 122.
Can pass through SiO
2Implement sputtering method or EB vapour deposition method or form dielectric film 13, can form diaphragm 14 by piling up MgO with sputtering method or EB vapour deposition method by piling up low melting point glass material.Utilize this operation, on show electrode 121,122, with the thorn that is soaked in acicular crystal particle 40 each other and acicular crystal particle 40 mode is each other piled up successively, the material of layered dielectric film 13 and the material of diaphragm 14.Therefore, form phase separation structure between the material of the material of the thorn of the acicular crystal particle 40 of setting and dielectric film 13 and diaphragm 14.
In addition; because till the height on the thorn summit of the thickness of dielectric film 13 and diaphragm 14 arrival acicular crystal particle 40; on the summit of thorn, pile up the material of dielectric film 13 and the material of diaphragm 14 hardly; therefore; the thorn that exposes acicular crystal particle 40 from the surface of diaphragm 14; and when the thickness of dielectric film 13 and diaphragm 14 becomes big, acicular crystal particle 40 will be embedded in wherein.
Here, can wait by the content of adjusting the acicular crystal particle 40 in the above-mentioned coating adjust the density that acicular crystal particle 40 distributes on first dielectric film 13.
On the surface of the panel that is coated with needle-like crystalline particle 40, pile up MgO with sputtering method or EB vapour deposition method, form diaphragm 14 thus.Utilize this operation, on first dielectric film 13, the material of diaphragm 14 made the thorn that is soaked in acicular crystal particle 40 each other and the form each other of acicular crystal particle 40.Therefore, form phase separation structure between the material of the thorn of the acicular crystal particle 40 of setting and diaphragm 14.
In addition; because till the height on the thorn summit of the thickness of dielectric film 13 arrival acicular crystal particle 40; on the summit of thorn, pile up the material of dielectric film 14 hardly; therefore; the thorn of acicular crystal particle 40 is outstanding from the surface of diaphragm 14; and when the thickness of diaphragm 14 becomes big, acicular crystal particle 40 will be embedded in wherein.
What illustrated in the configuration density of the lip-deep acicular crystal particle 40 of show electrode 121,122 and the above-mentioned execution mode 3 is identical, preferably more than 30%, below 90%, be more preferably below 60%.
In the present embodiment; convenience from making preferably, also forms dielectric film 13 and diaphragm 14 as mentioned above like that successively after decentralized configuration acicular crystal particle 40; yet; also can consider following method, that is, at first; be formed on the dielectric film 13 that is formed with recess on the formation precalculated position of acicular crystal power particle 40; after this, configuration needle-like crystalline particle 40 in this recess is to form diaphragm 14.
(execution mode 5)
The overall structure of PDP is identical with execution mode 1.
Figure 12 (a) and (b) are the cutaway view of major part of structure of front panel 10 of expression execution mode 5 and the plane graph of major part.
This front panel 10 and above-mentioned execution mode 3 identical constituting, in front on substrate 11 face a plurality of show electrodes (scan electrode 121 and keep electrode 122) formed band shape and further pile up first dielectric film 13 and diaphragm 14 to cover these electrode groups.
Yet, in above-mentioned execution mode 3, dispose acicular crystals 15 at scan electrode 121 on the electrode 122 with keeping, relative therewith, difference is in the present embodiment, in scan electrode 121 and the centre of keeping electrode 122 electron emission electrode 123 is set, configuration acicular crystals 15 on this electron emission electrode 123.
Promptly; shown in Figure 12 (a) and (b); the acicular crystals 15 that on the surface of electron emission electrode 123, forms by conductive materials or semiconductor substance with the state configuration of erectting; each acicular crystals 15 connects dielectric film 13, forms phase separation structure between acicular crystals 15 and dielectric film 13 and the diaphragm 14.
About making acicular crystals 15 be erected at the lip-deep method of electron emission electrode 123, with execution mode 3 illustrated identical, can be by form catalyst layer 16 on catalyst layer 16 with on the surface that is dispersed in electron emission electrode 123 and graphite particle is grown up implement.
In addition, in the example shown in Figure 12 (b), on the surface of electron emission electrode 123, only be equivalent to discharge cell central portion (with the regional A of dotted line among the figure) configuration acicular crystals 15, yet, also can be configured on the whole surface of electron emission electrode 123.
In addition, in the example shown in Figure 12 (b),, form, use the transparency electrode identical to constitute electron emission electrode 123 with transparency electrode 121a, 122a towards jut 121c, the 122c of the middle body of discharge cell at transparency electrode 121a, 122a.
When PDP drives, show electrode 121,122 alternately applied in during keeping and keep pulse, and electron emission electrode 123 keeps earthing potential or floating potentials.
Thus, between scan electrode 121 and the electron emission electrode 123 and keep between electrode 122 and the electron emission electrode 123, alternately form electric field.And, utilizing this electric field, the acicular crystals 15 from the electron emission electrode 123 is to discharge space 30 emitting electrons.Consequently, because the electron density in the discharge space uprises, so scan electrode 121 and the discharge ionization voltage step-down of keeping 122 at electrode.
In addition, utilize acicular crystals 15 on the electron emission electrode 123 also can improve the lip-deep secondary electron emission performance of diaphragm 14.
Moreover if when transparency electrode 121a, 122a form jut 121c, 122c, at scan electrode 121 and when keeping electrode 122 and applying pulse voltage, it is big that the electric field on the electron emission electrode 123 becomes.
About the formation density of the lip-deep acicular crystals 15 of electron emission electrode 123, with illustrated in the execution mode 3 identical, preferably more than 30%, below 90%, 60% with next desirable more.
With illustrated in the above-mentioned execution mode 3 identical, even in the PDP of the front panel 10 that possesses present embodiment, also can be by the concentration of Xe being set to such an extent that higherly suppress discharge ionization voltage lower and obtain high luminous efficiency.Consequently, can significantly reduce the power consumption of PDP.
For example, for the PDP of the structure in the past that does not dispose acicular crystals on electrode, adopt as discharge gas under the situation of 10%Xe+90%Ne, the measured value of discharge ionization voltage is higher, is 220V; Yet, for as present embodiment, on electron emission electrode 123, disposing acicular crystals to form the PDP of phase separation structure body, even adopt 10%Xe+90%Ne as discharge gas, also the measured value of discharge ionization voltage can be suppressed lower, be 160V.
(to the usability of the electron emission source of FED)
In above-mentioned execution mode 1～5, have on electrode by the acicular crystal particle and imbed the phase separation structure thing that the metal oxide in its gap constitutes at the front panel of PDP, and can use having with the phase separation structure body of spline structure electron emission source as FED.
That is, even in the electron emission source of FED, if make the acicular crystal particle be erected at substrate and betwixt the crack insert the big metal oxide of electron emission coefficiency, just can mechanical type reinforce the acicular crystal particle.Therefore, can obtain to suppress fluctuation and electron emission source efficiently.
Industrial application
By means of the present invention since produce in PDP, can suppress to drive the time discharge deviation and Reduce simultaneously discharge ionization voltage, therefore, in big and thin display screen, show for improving Quality and reduction power consumption are effective.
Claims (13)
1. a plasma panel will dispose electrode and cover front substrate and the back substrate devices spaced apart arranged opposite that this electrode forms dielectric film and diaphragm successively on a side interarea,
By between two substrates, producing discharge to above-mentioned electrode application voltage, carry out luminous demonstration thus, wherein,
The acicular crystals that constitutes by conductive materials or semiconductor substance, with the upright state of the interarea approximate vertical of above-mentioned front substrate under, be adapted to this acicular crystals above-mentioned dielectric film connected on its thickness direction,
At this acicular crystals each other, the stacked material of above-mentioned dielectric film and the material of said protection film of filling up.
2. plasma panel as claimed in claim 1, wherein,
Material and above-mentioned acicular crystals by above-mentioned dielectric film form the phase separation structure thing.
3. plasma panel as claimed in claim 1, wherein,
Above-mentioned acicular crystals is the graphite crystallization body.
4. plasma panel as claimed in claim 3, wherein,
Between above-mentioned electrode and above-mentioned graphite crystallization body, accompany the metal level that constitutes by a kind that from Fe, Co and Ni, chooses or multiple metal.
5. plasma panel as claimed in claim 3, wherein,
Above-mentioned graphite crystallization body is choose from carbon nano-tube, gnf and diamond-like-carbon a kind of.
6. plasma panel as claimed in claim 1, wherein,
Above-mentioned acicular crystals is the particle of four-footed shape.
7. plasma panel as claimed in claim 6, wherein,
Above-mentioned particle is made of ZnO.
8. plasma panel as claimed in claim 1, wherein,
The leading section of above-mentioned acicular crystals exposes from the surface of said protection film.
9. plasma panel as claimed in claim 1, wherein,
The leading section of above-mentioned acicular crystals is buried in the said protection film.
10. plasma panel as claimed in claim 1, wherein,
It is right to comprise show electrode in above-mentioned electrode,
On right side of this show electrode or both sides, be equipped with above-mentioned acicular crystals.
11. plasma panel as claimed in claim 1, wherein,
In above-mentioned electrode, comprise show electrode to and be formed on electron emission electrode between this show electrode,
On this electron emission electrode, be equipped with above-mentioned acicular crystals.
12. plasma panel as claimed in claim 11, wherein,
Make when discharge of keeping of between above-mentioned two substrates, discharging, apply at above-mentioned show electrode and above-mentioned electron emission electrode is remained on earthing potential or floating potential when keeping voltage.
13. as any described plasma panel of claim 1～12, wherein,
Said protection film is that the mixture by the metal oxide that chooses from MgO, CaO, SrO and BaO or these metal oxides constitutes.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP379730/2003 | 2003-11-10 | ||
| JP2003379730 | 2003-11-10 | ||
| JP305185/2004 | 2004-10-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1902724A CN1902724A (en) | 2007-01-24 |
| CN100592454C true CN100592454C (en) | 2010-02-24 |
Family
ID=37657598
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200480040188A Expired - Fee Related CN100592454C (en) | 2003-11-10 | 2004-11-10 | Plasma display panel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100592454C (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5298579B2 (en) * | 2008-03-12 | 2013-09-25 | パナソニック株式会社 | Plasma display panel |
| CN102082060B (en) * | 2010-09-30 | 2012-09-05 | 四川虹欧显示器件有限公司 | Plasma display screen and manufacturing method thereof |
| CN104124123B (en) * | 2014-04-02 | 2016-08-17 | 西安交通大学 | A kind of MgO/ZnO Composite protective and preparation method thereof |
| CN104599923A (en) * | 2015-01-12 | 2015-05-06 | 西安交通大学 | MgO/ ZnO composite medium protecting film and preparation method thereof |
| CN113056081A (en) * | 2021-04-16 | 2021-06-29 | 深圳市龙江科创科技有限公司 | Flexible electrode and device for plasma surface discharge |
-
2004
- 2004-11-10 CN CN200480040188A patent/CN100592454C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1902724A (en) | 2007-01-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7973477B2 (en) | Plasma display panel having a phosphor layer that is at least partly covered with a material higher in secondary electron emission and production method therefore | |
| TWI327738B (en) | ||
| JP4532718B2 (en) | Secondary electron amplification structure using carbon nanotube, plasma display panel and backlight using the same | |
| US6548962B1 (en) | Gas discharge panel | |
| JPH07192630A (en) | Gas discharge display panel and its protective film forming method | |
| JP4611207B2 (en) | Plasma display panel | |
| CN100592454C (en) | Plasma display panel | |
| JP4468239B2 (en) | Plasma display panel | |
| EP0757341B1 (en) | Limiting and selfuniforming cathode currents through the microtips of a field emission flat panel display | |
| KR100522684B1 (en) | Flat display device comprising material layers for electron amplification having carbon nanotube layer and method for manufacturing the same | |
| WO2004042766A1 (en) | Plasma display panel | |
| CN100561640C (en) | Utilize the plasma display and the plane lamp of boron nitride bamboo | |
| WO2004086445A1 (en) | Plasma display panel | |
| JPH03187125A (en) | Plasma display panel and its driving method | |
| KR100741096B1 (en) | Display device | |
| US20080150429A1 (en) | Plasma display panel | |
| US20010040435A1 (en) | Plasma display panel | |
| JP4430542B2 (en) | Plasma display panel | |
| TWI251256B (en) | Plasma display panel and method for manufacturing the same | |
| JP4422081B2 (en) | Plasma display panel | |
| KR100768045B1 (en) | Plasma Display Panel Using a High Frequency | |
| JP2006059802A (en) | Protective film for plasma display panel and manufacturing method of protective film for plasma display panel | |
| KR100323980B1 (en) | Plasma Display Panel Device | |
| US20070285011A1 (en) | Plasma display apparatus and driving method thereof | |
| KR20070073071A (en) | A protection layer of plasma display panel, an upper plate of plasma display panel and a method for manufacturing it |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100224 Termination date: 20121110 |