CN100590864C - Transmission line structure and signal transmission structure - Google Patents
Transmission line structure and signal transmission structure Download PDFInfo
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- CN100590864C CN100590864C CN200710137114A CN200710137114A CN100590864C CN 100590864 C CN100590864 C CN 100590864C CN 200710137114 A CN200710137114 A CN 200710137114A CN 200710137114 A CN200710137114 A CN 200710137114A CN 100590864 C CN100590864 C CN 100590864C
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Abstract
This invention relates to a transmission line structure including a transmission line, a doped region and a first protection line, in which, the transmission line is matched on the base, the doped region is in the base and at least part of the projection of the transmission line falls on the doped region, the first protection line is set on the base to be separated with the transmission line and coupled to the dopent region electrically, besides, the conduction of thje first protection line is higher than that of the dopent region.
Description
Technical field
The invention relates to a kind of transmission line structure and signal transmission structure, and particularly relevant for a kind of transmission line structure and signal transmission structure with better signal transmission quality.
Background technology
In semiconductor industry, the integrated circuit (IC) chip with high integration and high processing rate has become developing tendency in future.Along with the usefulness of integrated circuit (IC) chip is constantly progressive, the frequency that electronic signal is transmitted in chip also little by little promotes.Yet, when the state of the frequency upgrading tremendously high frequency of electronic signal, for example more than 1,000,000,000 hertz (giga-hertz), cause the signal of chip internal to be subjected to severe noise easily and disturb, make problem such as noise effect transmission distortion become clear day by day.And cross-talk (crosstalk) phenomenon just modal noise jamming one.The cross-talk phenomenon mainly is to stem between the two adjacent conductors to be coupled and generation stray inductance or parasitic capacitance, and usually can be beneficial apparent serious along with the increase of the winding placement density in the chip.
Electronic signal between the chip internal element is normally transmitted by signal transmission structure.And be used for connecting signal transmission structure between two elements or the two-end-point, when electronic signal was transmitted between signal transmission structure, the characteristic impedance of signal transmission structure can remain unchanged.Especially transmit at the signal of high speed or high frequency, more need design between two elements or the two-end-point by good impedance matching (impedance matching), in order to reduce the reflection that impedance does not match and caused, and the return loss (return loss) when improving signal relatively and transmitting, avoid influencing the quality of signal transmission.
Generally speaking, take place between plain conductor in the chip and the silicon base to be coupled and generation stray inductance or parasitic capacitance, can cause energy loss.Because silicon base itself has low electric conductivity, therefore can make around the energy of loss is distributed in silicon base.And the energy that is dispersed in the silicon base also can be coupled with other elements or lead usually once more, and produces noise jamming.
In order to reduce the noise jamming that silicon base causes, known transmission line structure can adopt the design of masking structure between silicon base and plain conductor, is coupled in order to be isolated between silicon base and the plain conductor, reduces noise jamming.Though masking structure can reduce the noise jamming that is coupled to silicon base from plain conductor,, can cause noise diffusion to be gone out because masking structure can't provide good grounding path.
Summary of the invention
The invention provides a kind of transmission line structure and signal transmission structure, can reduce the generation of cross-talk phenomenon, and noise is derived by the guard wire of ground connection, reduce noise jamming.
The present invention proposes a kind of transmission line structure, and it comprises transmission line, doped region and first guard wire.Transmission line is disposed in the substrate.Doped region is disposed in the substrate, and drops on the doped region to the projection meeting of small part transmission line.First guard wire is positioned in the substrate, to bearing of trend that should transmission line and with the transmission line configured separate.The first guard wire ground connection, and electric property coupling doped region.In addition, the conductivity of first guard wire is higher than the conductivity of doped region.
The present invention proposes a kind of signal transmission structure in addition, and it comprises a plurality of elements and transmission line structure.Arrangements of components is in substrate.Transmission line structure is between adjacent two elements.Transmission line structure comprises transmission line, doped region and first guard wire.Transmission line is disposed in the substrate, and the adjacent two elements of electric property coupling.Doped region is disposed in the substrate, and drops on the doped region to the projection meeting of small part transmission line.First guard wire is positioned in the substrate, to bearing of trend that should transmission line and with the transmission line configured separate.The first guard wire ground connection, and electric property coupling doped region.In addition, the conductivity of first guard wire is higher than the conductivity of doped region.
Transmission line structure of the present invention and signal transmission structure are the guard wires that doped region is connected to ground connection because the conductivity of guard wire is higher than the conductivity of doped region, doped region thus can be via guard wire ground connection.Therefore, following at the work time pulse of high frequency, doped region can stop effectively that more the induction coupling takes place for transmission line and substrate, and can successfully via guard wire the noise in the doped region be rejected to outside the integrated circuit (IC) chip.
For above-mentioned feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Description of drawings
Figure 1A is the schematic top plan view according to the transmission line structure of one embodiment of the invention.
Figure 1B is the generalized section of I-I ' line segment in Figure 1A.
Fig. 1 C is the generalized section according to another embodiment of the present invention I-I ' line segment in Figure 1A.
Fig. 1 D is the generalized section according to further embodiment of this invention I-I ' line segment in Figure 1A.
Fig. 1 E is the schematic top plan view according to the transmission line structure of further embodiment of this invention.
Fig. 2 A is the schematic top plan view according to the transmission line structure of other embodiments of the invention.
Fig. 2 B is the generalized section of II-II ' line segment in Fig. 2 A.
Fig. 2 C is the generalized section according to another embodiment of the present invention II-II ' line segment in Fig. 2 A.
Fig. 2 D is the generalized section according to the transmission line structure of yet another embodiment of the invention.
Fig. 3 is the schematic top plan view according to the signal transmission structure of one embodiment of the invention.
Fig. 4 be the transmission line structure 100 of one embodiment of the invention and known transmission line structure 300,400 under the work time pulse of different frequency, the comparative graph of return loss.
The main element symbol description
100,100 ', 300,400: transmission line structure
102: substrate
103: well region
104: transmission line
106,107: guard wire
108: doped region
108a: doped region
110: contact hole
200: signal transmission structure
210a, 210b: element
212a, 212b: ground contact
H
1, H
2, H
3: highly
Embodiment
Figure 1A is the schematic top plan view according to the transmission line structure of one embodiment of the invention.Figure 1B is the generalized section of I-I ' line segment in Figure 1A.Fig. 1 C is the generalized section according to another embodiment of the present invention I-I ' line segment in Figure 1A.
Please be simultaneously with reference to Figure 1A and Figure 1B, transmission line structure 100 comprises transmission line 104, guard wire 106 and doped region 108.Transmission line 104 and guard wire 106 all are disposed at the top of substrate 102, and transmission line 104 is a configured separate with guard wire 106.Doped region 108 is disposed in the substrate 102, and it for example is the topmost that is positioned at substrate 102.Transmission line structure 100 can realize that wherein substrate 102 for example is a P type silicon base by semiconductor technology.The material of transmission line 104 can be a metal, and it for example is materials such as copper, aluminium copper.The material of guard wire 106 can be an electric conducting material, and it for example is materials such as metal or polysilicon.Doped region 108 for example is a P type heavily doped region.
Please refer to Fig. 1 C, in another embodiment, in substrate 102, more comprise well region 103.Well region 103 for example is to be disposed in the substrate 102, and doped region 108 is disposed in the well region 103.When substrate 102 was P type silicon base, well region 103 for example was a N type well region.Corresponding well region 103, doped region 108 can be the N type heavily doped region that is positioned at substrate 102 topmosts.Certainly, the conductivity type of the conductivity type of substrate 102 and doped region 108 can also be other combination, has in this technical field and knows that usually the visual process requirements of the knowledgeable adjusts.
Please be simultaneously with reference to Figure 1A, Figure 1B and Fig. 1 C, transmission line 104 for example is to be configured at a distance of substrate 102 apparent height H
1The position.Transmission line 104 is the bang paths that are used to provide the chip internal electronic signal.
Fig. 1 D is the generalized section according to further embodiment of this invention I-I ' line segment in Figure 1A.In Fig. 1 D, the member identical with Figure 1B then uses identical label and omits its explanation.
Please refer to Fig. 1 D, in another embodiment, guard wire 106 for example is to be configured at a distance of substrate 102 apparent height H
1The position.That is to say that guard wire 106 also can be a side that is positioned at transmission line 104, and be configured on the identical level height with transmission line 104.
Please referring again to Figure 1A to Fig. 1 D, doped region 108 for example is the part upper surface that constitutes substrate 102.Projection meeting to small part transmission line 104 drops on the doped region 108, makes doped region 108 can be used as the masking structure that completely cuts off between transmission line 104 and the substrate 102.That is to say that the projection of transmission line 104 can be that part drops on the doped region 108; Or the projection of transmission line 104 can drop on (shown in Figure 1A) on the doped region 108 fully.In detail, doped region 108 promotes the quality that signal transmits as long as coupling between energy shaded portions transmission line 104 and the substrate 102 can reduce from transmission line 104 and inject the noise of substrates 102.Shown in Figure 1A, under the projection of transmission line 104 dropped on situation on the doped region 108 fully, doped region 108 can produce better screening effect between transmission line 104 and substrate 102.
In addition, doped region 108 can couple with guard wire 106, and guard wire 106 ground connection.That is to say, for example be to dispose contact hole 110 between doped region 108 and guard wire 106, makes doped region 108 be electrically connected to guard wire 106.Because guard wire 106 ground connection, so doped region 108 can obtain good grounding path by guard wire 106.That is the noise that accumulates in doped region 108 can be discharged via guard wire 106 ground connection, can improve the noise jamming of transmission line structure 100 effectively.
What deserves to be mentioned is, be disposed at the guard wire 106 of a side of transmission line, when signal transmits, can provide the good signal return flow path, help to reduce the generation of cross-talk phenomenon.That is to say that guard wire 106 has the function of supplying with signal protection, to avoid unexpected noise jamming.
Fig. 1 E is the schematic top plan view according to the transmission line structure of further embodiment of this invention.In Fig. 1 E, the member identical with Figure 1A then uses identical label and omits its explanation.
Please refer to Fig. 1 E, doped region 108 is made of plural doped region 108a.In this embodiment, doped region 108 is made of three doped region 108a, and for example is to have at interval between three doped region 108a.When doped region 108 comprised a plurality of doped region 108a, the mode of doped region 108 ground connection for example was with each doped region 108a ground connection respectively.Each doped region 108a that is to say that each doped region 108a electrically connects with guard wire 106 respectively by contact hole 110, so that can reach the purpose of ground connection via guard wire 106.More than be to be that example is done explanation, so the invention is not restricted to this with doped region 108 with three doped region 108a.In other embodiments, doped region 108 can comprise more than one doped region 108a, and the earthing mode of doped region 108 also is not limited to the above embodiments, as long as make each doped region 108a be coupled to the guard wire 106 of ground connection respectively.In addition, because as long as doped region 108 is coupling between energy shaded portions transmission line 104 and the substrate 102, can reduce from transmission line 104 and inject the noise of substrate 102, therefore if doped region 108 only is made of a doped region 108a, it also can promote the quality that signal transmits.
What specify is, the conductivity of guard wire 106 for example is the conductivity that is higher than doped region 108, when electronic signal from transmission line 104 by the time, the backflow signal can select conductivity preferable guard wire 106 as return flow path, but not by doped region 108.The doped region 108 that is disposed between substrate 102 and the transmission line 104 then can be used as masking structure, reduce the generation of cross-talk phenomenon, so doped region 108 has good shield effectiveness for noise.In addition, doped region 108 couples with the guard wire 106 of ground connection, can further the noise in the doped region 108 be derived via the preferable guard wire 106 of conductivity, reduces the situation of noise diffusion.
In the embodiment shown in Figure 1A, be to be that example describes with transmission line structure 100 with a guard wire 106, right the present invention is not limited to this.Below, with the relative configuration relation that goes on to say when transmission line structure comprises many guard wires.
Fig. 2 A is according to looking schematic diagram on the transmission line structure of other embodiments of the invention.Fig. 2 B is the generalized section of II-II ' line segment in Fig. 2 A.Fig. 2 C is the generalized section according to another embodiment of the present invention II-II ' line segment in Fig. 2 A.In Fig. 2 A to 2C, the member identical with Figure 1A to Fig. 1 E then uses identical label and omits its explanation.
Please be simultaneously with reference to Fig. 2 A and Fig. 2 B, it is roughly the same with the member of forming transmission line structure 100 to form transmission line structure 100 ', but transmission line structure 100 ' more comprises guard wire 107 except transmission line 104, guard wire 106 and doped region 108.Transmission line 104 for example is to be configured between guard wire 106 and the guard wire 107.Shown in Fig. 2 A, guard wire 106 for example is the both sides that are configured in transmission line 104 respectively with guard wire 107.In addition, guard wire 106 and guard wire 107 ground connection.Between doped region 108 and guard wire 106,107 for example is to dispose contact hole 110 respectively, makes doped region 108 can be electrically connected to guard wire 106 and guard wire 107.The material of guard wire 107 can be an electric conducting material, and it for example is materials such as metal or polysilicon.
Hold above-mentionedly, guard wire 106 and guard wire 107 for example are the bearing of trends of corresponding transmission line 104, and with transmission line 104 configured separate.Guard wire 106 for example is the length that is equal to transmission line 104 with the length of guard wire 107.In this embodiment, transmission line 104 is configured in the position at a distance of substrate 102 apparent height H1, and guard wire 106 is configured at a distance of substrate 102 apparent height H with guard wire 107
2The position, height H wherein
1Greater than height H
2That is to say that guard wire 106 is to be positioned at identical level height with guard wire 107, and guard wire 106,107 is positioned at different level heights with transmission line 104.
In addition, in another embodiment, guard wire 106 also can be to lay respectively at different elevation plane with relative configuration relation between the guard wire 107.Please refer to Fig. 2 C, transmission line 104 for example is to be configured at a distance of substrate 102 apparent height H with guard wire 107
1The position, guard wire 106 then for example is to be configured at a distance of substrate 102 apparent height H
2The position, height H wherein
1Greater than height H
2In addition, in another embodiment, guard wire 106,107 also can be the both sides that guard wire 106 and guard wire 107 are configured in transmission line 104 respectively with relative configuration relation between the transmission line 104, and guard wire 106,107 is positioned at identical level height H with transmission line 104
1(not illustrating).
Fig. 2 D is the generalized section according to the transmission line structure of yet another embodiment of the invention.In Fig. 2 D, the member identical with Fig. 2 B then uses identical label and omits its explanation.
Certainly, please refer to Fig. 2 D, guard wire 106 and guard wire 107 can also be configured in the same side of transmission line 104.In this embodiment, guard wire 106 is to be positioned on the same vertical plane with guard wire 107, and is the relation of disposed adjacent up and down.Transmission line 104 is configured at a distance of substrate 102 apparent height H
1The position, guard wire 106 then for example is to be configured at a distance of substrate 102 apparent height H
2The position, 107 of guard wires for example are to be configured at a distance of substrate 102 apparent height H
3The position, height H wherein
3Greater than height H
2, and height H
1Between height H
3With height H
2Between.In addition, in another embodiment, guard wire 106,107 also can be the both sides that guard wire 106 and guard wire 107 are configured in transmission line 104 respectively with relative configuration relation between the transmission line 104, and transmission line 104, guard wire 106,107 are configured in respectively at a distance of substrate 102 apparent height H
1, H
2, H
3The position, height H wherein
3Greater than height H
2, and height H
1Between height H
3With height H
2Between (not illustrating).
Moreover when guard wire 106 and guard wire 107 were neighbouring configuration, guard wire 106 can couple by contact hole 110 and doped region 108 respectively with guard wire 107.
What specify is when transmission line structure 100 ' comprises many guard wires (guard wire 106 and guard wire 107), can further prevent noise toward different direction diffusions on every side, and the good signal return flow path is provided, and improve noise jamming effectively.
Next the application that above-mentioned transmission line structure 100 is disposed at signal transmission structure will be described.Fig. 3 is according to looking schematic diagram on the signal transmission structure of one embodiment of the invention.In Fig. 3, the member identical with Figure 1A then uses identical label and omits its explanation.In addition, for convenience of description, in Fig. 3, omission is illustrated dielectric layer.
Please refer to Fig. 3, signal transmission structure 200 comprises element 210a, element 210b and transmission line structure 100.Element 210a and element 210b for example are in the dielectric layer that is disposed in the substrate 102.Transmission line structure 100 comprises transmission line 104, guard wire 106 and doped region 108.Transmission line 104 is disposed in the dielectric layer in the substrate 102, and Connection Element 210a and element 210b.Guard wire 106 for example is to be configured on the different elevation plane with transmission line 104.Guard wire 106 for example is a side that is disposed at transmission line 104 corresponding to the bearing of trend of transmission line 104.In addition, guard wire 106 ground connection, and the method for ground connection for example is to electrically connect with ground contact 212a and ground contact 212b respectively by its two-end-point.And doped region 108 is disposed in the substrate 102, and doped region 108 for example is the topmost that is positioned at substrate 102.Projection meeting to small part transmission line 104 drops on the doped region 108, and in the present embodiment, the projection of transmission line 104 can drop on the doped region 108 fully.In addition, for example be to dispose contact hole (not illustrating) between doped region 108 and guard wire 106, with doped region 108 and guard wire 106 electric property couplings, make doped region 108 via guard wire 106 ground connection.
In the present embodiment, element 210a and element 210b can be respectively signal contact, circuit element or circuit module.Above-mentioned signal contact for example is the part that constitutes from the line layer of metal interconnecting structure.Circuit element can be active element, passive component or aforementioned both combination, and wherein active element for example is the combination of conveyer, receiver, power amplifier, voltage-controlled oscillator (VCO) or aforementioned components.Circuit module for example is memory body module, power supply module, passive circuit module, control and logic module, delivery module or receiver module etc.Element 210a and element 210b can be any two-end-point that needs to transmit electronic signal, have in this field and know that usually the knowledgeable works as visual its demand and adjusts.
As shown in Figure 3, in the present embodiment, signal transmission structure 200 has a guard wire 106, so is not in order to limit the quantity of guard wire 106 of the present invention.In other embodiments, signal transmission structure 200 more can dispose many guard wires 106, and transmission line 104 is disposed between these guard wires 106, can prevent that so noise toward being diffused into any one direction on every side, has preferable effect to improving noise jamming.In addition, in the present embodiment, be that to be disposed at different level heights with guard wire 106 and transmission line 104 be that example describes, certainly, guard wire 106 can also be to be disposed at identical level height with transmission line 104, the present invention does not do any qualification in this.
It should be noted that, in above-mentioned signal transmission structure 200, guard wire 106 is sides that are disposed at the transmission line 104 of Connection Element 210a and element 210b, and the projection meeting of transmission line 104 drops on substrate 102 lip-deep doped regions 108, and doped region 108 can be by coupling and ground connection with guard wire 106.Therefore, when integrated circuit (IC) chip during with the running of the work time pulse of high frequency, guard wire 106 can provide the signal return flow path reducing the generation of cross-talk phenomenon, and doped region 108 has good shield effectiveness for noise, and has grounding path that noise is derived.Thus, the just more difficult interference of noise that is subjected to of signal transmission structure 200 is can have better usefulness with integrated circuit (IC) chip.
Certainly, in the embodiment shown in fig. 3, be to comprise that with signal transmission structure 200 two elements and transmission line structure 100 are that example describes, but be not in order to limit scope of the present invention.In other embodiments, signal transmission structure can comprise a plurality of elements and be disposed at transmission line structure between the adjacent two elements, and transmission line structure more can comprise many guard wires, knows present technique person when can directly going adjustment.
Fig. 4 be the transmission line structure 100 of one embodiment of the invention and known transmission line structure under the work time pulse of different frequency, the comparative graph of return loss.In Fig. 4, known transmission line structure comprises transmission line structure 300 and transmission line structure 400, and wherein transmission line structure 300 is the transmission line of nothing configuration guard wire or doped region, and transmission line structure 400 is for disposing the transmission line of doped region as masking structure.
Please refer to Fig. 4, by practical test result as can be known: in the scope of high frequency, because transmission line structure 400 has doped region as masking structure, therefore in known transmission line structure, the return loss of transmission line structure 400 can have a little improvement than the return loss of transmission line structure 300.Yet the effect of improving of transmission line structure 400 still has its limit.And in frequency in the scope of 0GHz to 20GHz, the transmission line structure 100 in the present embodiment all has than known transmission line structure 300 and transmission line structure 400 and has better impedance matching.Therefore, no matter in the frequency range of low frequency or high frequency, the transmission line structure 100 of present embodiment can improve return loss really significantly, reduces noise jamming, to improve the quality of signal transmission.
In sum, transmission line structure of the present invention and signal transmission structure are the guard wires that doped region is connected to ground connection because the conductivity of guard wire is higher than the conductivity of doped region, doped region thus can be via guard wire ground connection.Therefore, following at the work time pulse of high frequency, doped region can stop effectively that more the induction coupling takes place for transmission line and substrate, and can be successfully via guard wire with the noise in the doped region be rejected to integrated circuit (IC) chip outside.In addition; since the guard wire of ground connection be corresponding transmission line bearing of trend and with the transmission line configured separate, therefore can provide the good signal return flow path, and have the good signal protective capability; can effectively reduce the cross-talk phenomenon, to avoid the quality of noise effect signal transmission.
On the other hand, the present invention can be applicable in the wireless radio frequency circuit, and the manufacture process of transmission line structure and signal transmission structure can be integrated in the existing semiconductor technology, therefore can not increase the cost of product or equipment.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; have in the technical field under any and know the knowledgeable usually; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking appended the claim person of defining.
Claims (9)
1. transmission line structure comprises:
Transmission line is disposed in the substrate;
Doped region is disposed in this substrate, drops on this doped region to the projection of this transmission line of small part; And
First guard wire is positioned in this substrate, to bearing of trend that should transmission line and with this transmission line configured separate, wherein this first guard wire ground connection, and this doped region of electric property coupling, and the conductivity of this first guard wire is higher than the conductivity of this doped region.
2. transmission line structure as claimed in claim 1 also comprises at least one contact hole, is disposed between this doped region and this first guard wire, makes this doped region be electrically coupled to this first guard wire.
3. transmission line structure as claimed in claim 1, wherein this transmission line structure also comprises second guard wire, this transmission line is disposed between this first guard wire and this second guard wire.
4. transmission line structure as claimed in claim 1, wherein the projection of this transmission line drops on this doped region fully.
5. transmission line structure as claimed in claim 1, wherein this doped region is made of a plurality of doped region, and each doped region respectively with this first guard wire electric property coupling.
6. transmission line structure as claimed in claim 5 more comprises a plurality of contact holes, is disposed between those doped regions and this first guard wire, makes each doped region be electrically coupled to this first guard wire respectively.
7. transmission line structure as claimed in claim 1, wherein this substrate is the first conductivity type substrate, and this doped region is the first conductivity type heavily doped region.
8. transmission line structure as claimed in claim 1 also comprises a well region, is disposed in this substrate, and this doped region is disposed in this well region, and this substrate is the first conductivity type substrate, and this well region is the second conductivity type well region, and this doped region is the second conductivity type heavily doped region.
9. signal transmission structure comprises:
A plurality of elements are disposed in the substrate; And
Transmission line structure according to claim 1 is between those adjacent elements.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710137114A CN100590864C (en) | 2007-07-19 | 2007-07-19 | Transmission line structure and signal transmission structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710137114A CN100590864C (en) | 2007-07-19 | 2007-07-19 | Transmission line structure and signal transmission structure |
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| CN101090106A CN101090106A (en) | 2007-12-19 |
| CN100590864C true CN100590864C (en) | 2010-02-17 |
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| DE102009017621B3 (en) * | 2009-04-16 | 2010-08-19 | Semikron Elektronik Gmbh & Co. Kg | Device for reducing the noise emission in a power electronic system |
| CN113506791A (en) * | 2021-07-09 | 2021-10-15 | 世芯电子（上海）有限公司 | Electromagnetic protection method based on redundant metal |
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Effective date of registration: 20200622 Address after: Chinese Taiwan New Taipei City Patentee after: VIA LABS Inc. Address before: Taiwan County, Taipei, China Patentee before: Via Technologies, Inc. |
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