CN113506791A - Electromagnetic protection method based on redundant metal - Google Patents
Electromagnetic protection method based on redundant metal Download PDFInfo
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- CN113506791A CN113506791A CN202110776258.0A CN202110776258A CN113506791A CN 113506791 A CN113506791 A CN 113506791A CN 202110776258 A CN202110776258 A CN 202110776258A CN 113506791 A CN113506791 A CN 113506791A
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- H01—ELECTRIC ELEMENTS
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Abstract
The invention discloses an electromagnetic protection method based on redundant metal, which has simple and reasonable structural design, can reduce the structural complexity of a chip and the manufacturing cost, and is applied to a semiconductor chip.
Description
Technical Field
The invention relates to the technical field of integrated circuit design, in particular to an electromagnetic protection method based on redundant metal.
Background
In a semiconductor manufacturing process, complex electromagnetic field environments inside and outside a semiconductor chip can seriously affect a high-speed, high-density and systematized digital circuit, disturb normal work of an electronic system and equipment, and reduce the service life of a sensitive device, so that when the integrated circuit chip is designed, the electronic system needs to be electromagnetically protected, the electromagnetic protection designed by the existing integrated circuit is generally realized on a system level, and the method mainly comprises the following steps: (1) an electromagnetic protection component is added in the system; (2) a complex electromagnetic protection circuit is built in the system; (3) advanced materials (modified carbon fibers or other composite electromagnetic protection materials) are used, and the like, so that the manufacturing cost is increased, and the complexity of system design is increased.
Disclosure of Invention
The invention provides an electromagnetic protection method based on redundant metal, which aims to solve the problems that in the prior art, the manufacturing cost and the structural design complexity are increased by increasing electromagnetic protection components in a chip system, building a complex electromagnetic protection circuit, using advanced materials and the like to realize electromagnetic protection, and the structural design is simple and reasonable, so that the structural complexity of a chip can be reduced, and the manufacturing cost can be reduced.
In order to achieve the purpose, the invention adopts the following technical scheme:
the electromagnetic protection method based on the redundant metal is applied to a semiconductor chip, and the chip comprises a wafer, a plurality of metal layers deposited on the wafer and a redundant metal layer.
It is further characterized in that the method further comprises the steps of,
the shielding wall comprises at least two layers of redundant metal layers, the redundant metal layers are distributed in parallel at intervals, the interval between every two adjacent redundant metal layers is an insulating layer, the redundant metal layers are connected through a through hole layer penetrating through the wafer and then grounded, or the redundant metal layers are grounded respectively;
the shielding walls are distributed on two sides of the signal metal layer, the shielding walls and the signal metal layer are distributed at intervals, and an insulating layer is arranged between the shielding walls and the signal metal layer;
the insulating layer is silicon;
the signal metal layers are bent, at least two layers of redundant metal layers are arranged at the bent positions of the signal metal layers, and the redundant metal layers are connected through the through hole layers and form the shielding wall in parallel;
the shielding walls on the two sides and the signal metal layer are vertically distributed at intervals;
the shielding walls on the two sides and the signal metal layer are positioned on the same plane and are distributed at intervals in parallel;
at least one layer of redundant metal layer is distributed on both sides of the signal metal layer in the horizontal direction and both sides of the signal metal layer in the vertical direction, and the redundant metal layer is grounded to form the shielding wall;
the signal includes any signal that needs to be masked.
The structure of the invention can achieve the following beneficial effects: the redundant metal layer is filled around the signal metal layer for signal transmission in the chip, the filling of the redundant metal layer not only solves the problem that the metal density in the chip is not enough or the flatness is not enough, but also isolates the signal metal layer from other areas in the chip by grounding the redundant metal layer, thereby playing a role in shielding; according to the method, electromagnetic protection in the signal transmission process can be realized without adding electromagnetic protection components in a chip system, building a complex electromagnetic protection circuit or using advanced materials, the structural design is simple and reasonable, and the structural complexity and the manufacturing cost of the chip are greatly reduced.
Drawings
Fig. 1 is a schematic structural diagram of a signal metal layer and a shielding wall according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a second signal metal layer and a shielding wall according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a three-signal metal layer and a shielding wall according to an embodiment of the present invention;
FIG. 4 is a schematic circuit diagram of the signal port and the shield line connected by a capacitor according to the present invention;
fig. 5 is a schematic structural view of the shield walls connected by the via layer according to the present invention.
Detailed Description
The electromagnetic protection method based on the redundant metal is applied to a semiconductor chip, the chip comprises a wafer, metal layers distributed on the wafer and redundant metal layers filled around the metal layers, the metal layers comprise signal metal layers 1, the signal metal layers 1 are used for signal transmission, the redundant metal layers around the signal metal layers 1 are grounded to form shielding walls 2, and the signal metal layers 1, the redundant metal layers and the through hole layers 2 are all made of conductive metal materials. The reason why the metal layer is filled with the redundant metal layer is that, in the semiconductor chip manufacturing process, a recessed region is generated in a region where the metal layer has a low density, which may cause signal delay and a problem in signal timing, thereby causing a chip failure. Therefore, the redundant metal layer is filled in the chip design stage, so that the metal density of the chip can meet the standard requirement, and the arrangement of the redundant metal layer can also play a role in improving the chip flatness requirement after Chemical Mechanical Polishing (CMP) of the semiconductor chip.
In this application, redundant metal level distributes in the metal level both sides in semiconductor chip, forms shielding wall 2 after the redundant metal level ground connection around the signal metal level 1, according to the signal shielding requirement, the signal metal level in different chips promptly and the distribution structure requirement in other regions can set up the shielding wall as following several forms:
referring to fig. 1, in the first embodiment, a plurality of redundant metal layers are distributed on two sides of a signal metal layer 1, the plurality of redundant metal layers are grounded to form a shielding wall 2, the shielding wall 2 and the signal metal layer 1 are distributed at intervals and in parallel, an insulating layer 4 is arranged between the shielding wall 2 and the signal metal layer 1, and the insulating layer 4 is made of silicon. In this embodiment, the signal metal layer 1 is the shape of buckling, and the signal metal layer 1 kink is provided with two layers of redundant metal layers, and every layer of redundant metal layer is ground respectively and is formed shielding wall 2, and the setting of two layers of redundant metal layers has not only satisfied the chip flatness requirement, has improved the signal shielding effect moreover.
In the second embodiment, at least one layer of redundant metal layer is respectively distributed on two sides of the signal metal layer 1 in the present embodiment, the redundant metal layer is grounded to form a shielding wall 2, the shielding wall 2 includes a first shielding wall 21 and a second shielding wall 22, the first shielding wall 21 and the second shielding wall 22 are distributed on two sides of the signal metal layer 1, and the first shielding wall 21, the signal metal layer 1 and the second shielding wall 22 are sequentially distributed in parallel at intervals from top to bottom, that is, the shielding wall 2 and the signal metal layer 1 are located on different layers in the vertical direction, see fig. 2, the first shielding wall 21 and the second shielding wall 22 are respectively grounded to form a shielding line, so that the signal metal layer 1 is isolated from other regions in the semiconductor chip, and electromagnetic shielding of different layers is achieved. In this embodiment, if the redundant space on both sides of the signal metal layer 1 is large, three redundant metal layers may be distributed on one side or both sides of the signal metal layer 1, each redundant metal layer is distributed vertically and parallelly at intervals, and the redundant metal layers are connected through a via layer 3 penetrating through an insulating layer, see fig. 5, the shielding wall 2 is formed after grounding the three redundant metal layers, compared with the mode of forming the shielding wall structure by grounding a single redundant metal layer, the shielding effect of the shielding wall formed after grounding the three redundant metal layers is better; the through hole layer 3 comprises at least three layers, so that the insulation resistance of the insulation layer is reduced, the conduction capability of current between the redundant metal layers is improved, and the noise is conveniently and quickly filtered.
In the third embodiment, at least one redundant metal layer is respectively distributed on both sides of the signal metal layer 1, the shielding wall 2 includes a first shielding wall 21 and a second shielding wall 22, the first shielding wall 21 and the second shielding wall 22 are distributed on both sides of the signal metal layer 1, and the first shielding wall 21, the signal metal layer 1 and the second shielding wall 22 are located on the same layer in the horizontal direction, as shown in fig. 3, the first shielding wall 21 and the second shielding wall 22 are respectively grounded to form a shielding line, so as to isolate the signal metal layer 1 from other regions in the semiconductor chip, thereby implementing the same electromagnetic shielding layer.
In the first to third embodiments, in practical application, the number and thickness of the shielding walls 2 are determined according to the signal strength and the redundant space of the signal metal layer 1, the distribution position of the shielding walls 2 is determined according to the structure of the signal metal layer 1 and other areas to be isolated in the chip, the signal metal layer 1 includes a signal port, the redundant metal layers on both sides of the signal port are grounded to form shielding lines, respectively, so that a coupling capacitor is formed between the signal port and the shielding lines on both sides, as shown in fig. 4, two ends of the signal port are a signal port near end and a signal port far end, respectively, the signal port near end is a signal output port, the signal port far end is a port after a signal is transmitted for a distance along the signal line, from the signal port near end to the signal port far end, high-frequency noise on the signal can be transmitted to the shielding lines through the coupling capacitor, that is, the high-frequency noise is transmitted to the ground, therefore, attenuation of signal noise is realized, in fig. 4, Δ V2 represents noise fluctuation between the signal metal layer and the shielding wire after the redundant metal layer is grounded, and Δ V1 represents noise fluctuation between the signal metal layer and the shielding wire before the redundant metal layer is grounded, and as can be seen from fig. 4, the Δ V1 voltage curve fluctuation is large before the redundant metal layer is grounded, and the Δ V2 voltage curve fluctuation is small after the redundant metal layer is grounded, that is, Δ V2/Δ V1<1, which shows that after the redundant metal layers on both sides of the signal metal layer are grounded, noise fluctuation between the signal metal layer and the shielding wire is obviously reduced, and attenuation of signal noise is realized, that is, electromagnetic protection is realized from a radiation source (signal port).
The method is applied to the field of 2.5D chip design, and the redundant metal layer used for physical mechanical filling in the prior art can improve the metal density and meet the requirement of chip flatness, but the redundant metal layer filling can cause the deterioration of chip electrical parameters. According to the method, the redundant metal layers form the shielding walls which are distributed on two sides of the serial interface, so that the problem of insufficient metal density is solved, the signal metal layers are isolated from other areas in the chip, the shielding effect is achieved, and the transmission of electromagnetic radiation is greatly reduced.
The above is only a preferred embodiment of the present application, and the present invention is not limited to the above embodiments. It is to be understood that other modifications and variations directly derived or suggested to those skilled in the art without departing from the spirit and scope of the invention are to be considered as included within the scope of the invention.
Claims (8)
1. The electromagnetic protection method based on the redundant metal is applied to a semiconductor chip, and the chip comprises a wafer, a plurality of metal layers deposited on the wafer and a redundant metal layer.
2. The method according to claim 1, wherein the shielding wall comprises at least two layers of the redundant metal layers distributed in parallel at intervals, the redundant metal layers are connected and grounded through a plurality of through hole layers penetrating through the wafer or each redundant metal layer is grounded respectively, and an insulating layer is arranged between two adjacent layers of the redundant metal layers.
3. The electromagnetic protection method according to claim 2, wherein the shielding walls are disposed on two sides of the signal metal layer, the redundant metal layer is spaced from and parallel to the signal metal layer, and the spacing between the redundant metal layer and the signal metal layer is an insulating layer.
4. A method of redundant metal based electromagnetic protection according to claim 3, wherein said insulating layer is silicon.
5. The electromagnetic protection method based on redundant metal as claimed in claim 4, wherein the signal metal layer is bent, at least two layers of the redundant metal layers are disposed at the bent position of the signal metal layer, and the redundant metal layers are connected through the via layer and form the shielding wall.
6. The method of claim 4, wherein the shielding walls on two sides and the signal metal layer are vertically disposed on different planes.
7. The method of claim 4, wherein the shielding walls on both sides and the signal metal layer are located on the same plane.
8. The method according to claim 4, wherein at least one layer of the redundant metal layer is disposed on both sides of the signal metal layer in the horizontal direction and both sides of the signal metal layer in the vertical direction, and the shielding wall is formed by grounding the redundant metal layer.
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| CN202110776258.0A CN113506791A (en) | 2021-07-09 | 2021-07-09 | Electromagnetic protection method based on redundant metal |
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Application publication date: 20211015 |