CN100583576C - Laser module and its manufacturing method - Google Patents
Laser module and its manufacturing method Download PDFInfo
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- CN100583576C CN100583576C CN200410002570A CN200410002570A CN100583576C CN 100583576 C CN100583576 C CN 100583576C CN 200410002570 A CN200410002570 A CN 200410002570A CN 200410002570 A CN200410002570 A CN 200410002570A CN 100583576 C CN100583576 C CN 100583576C
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Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4251—Sealed packages
- G02B6/4254—Sealed packages with an inert gas, e.g. nitrogen or oxygen
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02218—Material of the housings; Filling of the housings
- H01S5/0222—Gas-filled housings
- H01S5/02224—Gas-filled housings the gas comprising oxygen, e.g. for avoiding contamination of the light emitting facets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optical Couplings Of Light Guides (AREA)
- Semiconductor Lasers (AREA)
Abstract
To obtain a high output and high reliability at a low cost in a laser module comprising semiconductor laser elements, optical fibers, and a converging optical system for converging laser beams emitted from the semiconductor laser elements and coupling the beams to the incident end of an optical fiber. Eight pieces of GaN semiconductor laser elements LD1 to LD8 fixedly aligned on a heat block (heat-sink block) 10, collimator lenses 11, and a condenser lens 12 are fixedly arranged in a package 40 having a light exiting window 16 covered with a light transmission member 15 on the wall surface. In the state that the laser elements LD1 to LD8, collimator lens 11, and the condenser lens 12 are arranged and fixed so that the laser beams emitted from the laser elements LD1 to LD8 are converged on the outside surface 15a of the light transmission member 15, the inside of the package 40 is degassed and hermetically sealed, and thereafter, the incident end of the optical fiber 13 is pressed into close contact with the light exiting window 15 for fixing.
Description
Technical field
The present invention relates to laser module and manufacture method thereof, relate in particular to the laser module and the manufacture method thereof of the light-gathering optics that comprises laser beam that semiconductor Laser device, optical fiber, optically focused penetrate from semiconductor Laser device and an end face that is coupled in optical fiber.
Background technology
In the past, have the semiconductor Laser device that in assembly, holds, at one end (light incident side) enters the optical fiber that is fixed in this assembly under the state of this component internal, the laser diode of the light-gathering optics of the light incident side that will be coupled in optical fiber from the laser beam that semiconductor Laser device penetrates is so-called stern fast (pigtail) type laser diode, generally be well known that as the optical communication parts.
In laser module inside, be the state of stable maintenance on the micron number magnitude with the light incident side optical coupling of semiconductor laser and optical fiber, optical fiber and light-gathering optics etc. use adhering devices such as scolding tin, welding or bonding agent to fix usually.
In the communication laser module, because outside moisture etc. worsen laser, the structure that is representative with the so-called CAN assembly that generally carries out the gas-tight seal assembly is the hermetically-sealed construction of protection semiconductor Laser device and laser end face in order to prevent.In this laser module, on the optics of polluter attached to ejaculation end face, light-gathering optics and the optical fiber etc. of semiconductor Laser device of remnants, the problem that laser characteristics worsens appears in the assembly of gas-tight seal.Especially, material adhesion effect (dust collecting effect) is remarkable in the part that optical density is high.In addition, comprise in the laser module of semiconductor Laser device of laser beam of wavelength of ejaculation 350～500nm (400nm band) of GaN based semiconductor laser diode etc., the photon energy height cause the photochemical reaction with material easily, so dust collecting effect shows more significantly.As one of polluter, enumerate the hydrocarbon compound of from the atmosphere of manufacturing process, sneaking into etc., this hydrocarbon adheres to analyte by laser polymerization or decomposition, hinders the raising of output.
Disclose the aerial low molecular weight polyorganosiloxane that floats by ultraviolet photochemical reaction and oxygen reaction, the form deposition of pressing SiOx is attached on the optical glass window component, so recommend regular is changed the window component (for example referring to Patent Document 1) that contacts with atmosphere.
Therefore, for preventing this dust collecting effect, make all proposals.For example propose more than the 100ppm to be that the oxygen of purpose is sneaked in the sealing gas and (for example referred to Patent Document 2) to decompose hydrocarbon compound etc.In the ultraviolet optical system below optics irradiation 400nm, propose atmosphere with optics and be made as nitrogen (for example referring to Patent Document 3) more than 99.9%.
In addition, known before black box, the degassing of carrying out component internal handle prevent aspect the dust collecting effect effective.
[patent documentation 1] spy opens flat 11-54852 communique
No. 5392305 communiques of [patent documentation 2] United States Patent (USP)
[patent documentation 3] spy opens flat 11-167132 communique
But, comprise 2 tunicles that 1 tunicle having applied that the UV hardening resin sold the open market constitutes and polymer constitute optical fiber, optical fiber is fixed under the situation of the laser module on the assembly, since under the state of fixed fiber to the assembly processing that outgases, there is the optical fiber tunicle in the degassing processing unit, during handling, the degassing produces degassing composition, this gaseous contamination inside modules from this tunicle.
For preventing this pollution, consider all to remove the coil serving of optical fiber in advance, but do not have the optical fiber of coil serving to fracture easily, be difficult to handle, practicality is low.
Summary of the invention
The present invention considers above-mentioned situation, its objective is laser module that adhere to, that obtain high reliability and manufacture method thereof that a kind of contaminant restraining matter is provided.
Laser module of the present invention is characterized in that comprising:
On light ejaculation window, have the assembly light transmission parts, gas-tight seal;
At least one or a plurality of semiconductor Laser device in the said modules internal configurations;
Optical fiber in the said modules exterior arrangement;
Make from the light-gathering optics of the laser beam condensation inside on the outer surface of above-mentioned light transmission parts, that be configured in said modules that above-mentioned semiconductor Laser device penetrates,
Wherein, the incident end of above-mentioned optical fiber connects airtight and is fixed on the position of the above-mentioned laser beam of optically focused of outer surface of above-mentioned light transmission parts.
The additional mark that is used for the position of definite above-mentioned laser beam of optically focused on the best above-mentioned light transmission parts.As the light transmission parts, be the parts that can see through above-mentioned laser beam, also can be the Any shape of circular flat board, parallel flat, lens, wedge shape etc.
Here connect airtight and fixedly contain and closely bond fixing state and removably by the state that connects airtight and be maintained fixed.
The vibration wavelength of above-mentioned semiconductor Laser device is to be suitable for the present invention in the laser module of 350～500nm.Specifically, enumerate the laser module of the semiconductor formation of GaN system.
Above-mentioned optical fiber input end inserts in the lasso, also said modules can be made to comprise the erector chimeric with above-mentioned lasso.
Preferably component internal is full of with inert gas, is more preferably oxygen, halogen family gas and/or the halogen compounds gas of sneaking into the above concentration of 1ppm in this inert gas.Promptly as the internal atmosphere of first assembly, be preferably in the mist of the oxygen of the above concentration of mist, (3) inert gas and the 1ppm of mist, (2) inert gas and the halogen family gas of oxygen of the above concentration of (1) inert gas and 1ppm and at least a gas in the halogen compounds gas and at least a gas in halogen family gas and the halogen compounds gas any.
Preferably to use fluxless scolding tin or do not contain Si be organic bonding agent or by welding or weld gas-tight seal to assembly.
As semiconductor Laser device, any in the combination of the juxtaposed a plurality of single cavity semiconductor laser diodes of array-like, 1 multi-cavity body semiconductor Laser device, the juxtaposed a plurality of multi-cavity body semiconductor Laser devices of array-like, single cavity semiconductor laser diode and multi-cavity body semiconductor Laser device preferably.
The manufacture method of laser module of the present invention, be the manufacture method of laser module that comprises the light-gathering optics of laser beam that one or more semiconductor Laser devices, optical fiber, optically focused penetrate from above-mentioned semiconductor Laser device and the incident end that is coupled in above-mentioned optical fiber, it is characterized in that:
But the light that has the light transmission parts that comprise that above-mentioned laser beam sees through on a wall penetrates the component internal of the gas-tight seal of window, dispose above-mentioned semiconductor Laser device and above-mentioned light-gathering optics, make above-mentioned laser beam condensation on the outer surface of above-mentioned light transmission parts;
To the processing that outgases of said modules inside;
After this degassing is handled, the gas-tight seal said modules;
Afterwards, for the incident end of above-mentioned laser beam optical coupled, the incident end of this optical fiber is connected airtight and be fixed on the above-mentioned outer surface of above-mentioned light transmission parts in above-mentioned optical fiber.
According to laser module of the present invention, semiconductor Laser device and light-gathering optics are included in the assembly and sealing, optical fiber is fixed on the assembly outside, therefore the degassing that can carry out before optical fiber is installed in the assembly is handled, and can not produce the pollution in the assembly that the disengaging gas from the coil serving of optical fiber brings.And because optical fiber and window are connected airtight, the light-incident end of optical fiber does not contact with atmosphere, prevents that polluter from adhering to the incident end face of this optical fiber.In addition, convergent laser bundle on the outside of light transmission parts, therefore the optical density of the face of the assembly inboard of light transmission parts can suppress, under the situation of the component internal residual contamination material of these parts, therefore near the organic capacity of decomposition in the inside that these can suppress the light transmission parts suppresses to adhere to polluter on this inside.That is, according to laser module of the present invention, but the adhering to of contaminant restraining matter, promptly therefore dust collecting effect can improve light output, obtains high reliability.
Promise is the additional mark that is used to determine the position of convergent laser bundle on the light transmission parts, then is labeled as benchmark by the equilateral observation mark of CCD camera limit with this laser beam is aimed at, and therefore aims at easily.Can aim at automatically.
Especially, penetrate at semiconductor Laser device under the situation of 350～500nm wavelength, the energy height, dust collecting effect increases, and therefore adopts the present invention to prevent that polluter from adhering to is effective.In will the laser module of a plurality of laser composite waves in 1 optical fiber from a plurality of semiconductor Laser devices or multi-cavity body semiconductor Laser device, the luminous intensity on the fiber end face be very high, so adhering to of polluter prevents that effect is obvious.
The incident end of optical fiber inserts in the lasso, and assembly comprises the erector chimeric with lasso, and then optical fiber is installed easily, improves the property handled.
In the manufacture method of laser module of the present invention, the degassing of carrying out before optical fiber is fixed on assembly in the assembly is handled, and therefore can not produce the pollution that the gas from the tunicle of optical fiber causes.At last optical fiber is fixed in assembly, so in the operation before the assembly sealing, does not need to handle optical fiber, so module is made easy.
Description of drawings
Fig. 1 is the plane graph of brief configuration of the laser module of expression first embodiment of the invention;
Fig. 2 is the side view of the laser module of first execution mode;
Fig. 3 is the local Zoom Side sectional view of the assembly of laser module;
Fig. 4 is the local Zoom Side sectional view of the laser module of another execution mode;
Fig. 5 is the local Zoom Side sectional view of manufacture method of the laser module of another execution mode of explanation);
Fig. 6 is the local amplification view of the laser module of other execution modes;
Fig. 7 is the sectional view of the method for preparing substrate of expression GaN based semiconductor laser diode;
Fig. 8 is the sectional view of the layer structure of expression GaN based semiconductor laser diode;
Fig. 9 is the plane graph of brief configuration of the laser module of expression second embodiment of the invention;
Figure 10 is the plane graph of brief configuration of the laser module of expression third embodiment of the invention.Among the figure, LD, LD1～8 ... semiconductor Laser device, B, B1～8 ... laser beam, 10 ... heat block, 11 ... lens arra, 12 ... collector lens, 13 ... optical fiber, 13a ... the optical fiber wire rod, 13b ... the resin tunicle, 15 ... the light transmission parts, 16 ... light penetrates window, 18 ... scolding tin, 20 ... lasso, 25 ... erector, 40 ... assembly
Embodiment
Use accompanying drawing to describe embodiments of the present invention in detail below.
The laser module of first execution mode of the present invention is described.Fig. 1 and Fig. 2 are the plane graph and the side cross-sectional view of the signal shape of this laser module of expression.Fig. 3 (a) and (b) be local Zoom Side sectional view and the front elevation that the light of assembly penetrates the part of window 16 and light transmission parts 15.
As depicted in figs. 1 and 2, the laser module of present embodiment is as arrange a fixing example on the heat block that is made of copper or copper alloy (heat release piece) 10, in the light with band light transmission parts 15 penetrates the assembly 40 of window 16, hold 8 GaN based semiconductor laser diode LD1～8, collimator lens array 11,12,1 optical fiber 13 of collector lens in assembly 40 outsides with its incident end crimping and connect airtight and be fixed in light transmission parts 15.
This Fig. 1 and Fig. 2 represent the basic structure of the laser module of present embodiment, and profile illustrates the shape of collimator lens array 11 and collector lens 12.And, complicate for avoiding figure, only element LD1 and the LD8 to two ends configuration in the GaN based semiconductor laser diode adds symbol, only B1 among laser beam B 1～B8 and B8 added symbol.GaN based semiconductor laser diode LD1～8 can be gone up fixing parts with the sub-frame (submount) that for example AlN constitutes and are installed on the heat block 10.
The laser beam B 1～8 that penetrates by divergent state from these GaN based semiconductor laser diodes LD1～8 is changed to directional light by lens arra 11 respectively.
The laser beam B 1～8 that becomes directional light, is aligned on the 15a of the outside of light transmission parts 15 and restrains shown in Fig. 3 (a) by collector lens 12 optically focused.Optical fiber 13 inserts its light incident side in the lasso 20, and the light incident side of optical fiber 13 connects airtight at light transmission parts 15 by each lasso 20 on the 15a of the outside of light transmission parts 15, to restrain position consistency with laser beam.In this example, lens arra 11 and collector lens 12 constitute light-gathering optics, constitute the glistening light of waves system of closing by itself and optical fiber 13.That is, by collector lens 12 as mentioned above the laser beam B 1～8 of optically focused incide the fibre core of this optical fiber 13 and propagate in the optical fiber 13, close ripple and be 1 laser beam B and penetrate from the unshowned ejaculation end face of optical fiber 13.The part of optical fiber 13 in inserting lasso 20 by resin bed 13b coated fiber wire rod 13a.
As optical fiber 13, staged refractive index type, gradually changed refractive index type, its compound whole being suitable for.
The light that is provided with on the assembly 40 penetrates window 16, for example be the circular port of 6mm, and it is that quartz glass or sapphire by ф 10mm constitutes disc-shaped part that this light penetrates the light transmission parts 15 that have on window 16, installs with covering window 16.40 whole enforcements of assembly are gold-plated, implement the AR coating on the assembly medial surface of light transmission parts 15 or interior lateral surface.The peripheral 1mm's of light transmission parts 15 is partially metallised, is installed on the assembly 40 by scolding tin 18.Light transmission parts 15 are not limited to disc-shaped part, can be shapes such as parallel flat, lens, wedge shape.
Fig. 3 (b) is a front elevation of observing the wall of the assembly before optical fiber 13 is fixed from the arrow P of this figure (a).Shown in Fig. 3 (b), additional marking 19 on light transmission parts 15.This mark 19 is formed on the outside 15a of light transmission parts 15 by etching.The aligning of above-mentioned laser beam is that benchmark uses the adjustment of CCD camera with this mark 19.
The manufacture method of the laser module of present embodiment then is described.
In component internal semiconductor Laser device LD 1～8, collimator lens array 11 and collector lens 12 are set.At this moment, is that benchmark collimation lens arra 11 and collector lens 12 are adjusted with the CCD camera with the mark on the outside 15a of light transmission parts 15 19, make laser beam B 1～8 optically focused that penetrates from a plurality of semiconductor Laser device LD1～8 on the assigned position of the outside of light transmission parts 15 15a, using fluxless scolding tin or not containing Si is organic bonding agent, or fixing by welding or welding.Mark 19 also can be the diameter hole identical or big slightly with the core diameter of optical fiber.
Install before these light transmission parts 15, aim at collimator lens array 11 and collector lens 12, afterwards alignment light permeation member 15 and being fixed on the assembly 40.
Afterwards, become the volatile ingredient of component internal of the reason of the long-term reliability that reduces laser for removal, assembly 40 is packed in the degassing processing unit, under nitrogen atmosphere, be heated to 90 ℃ of processing that outgas.Gas is except that nitrogen in the atmosphere, can be for example oxygen, inert gas etc. or its mist, also can reduce pressure.After the degassing is handled, lid 41 is set on assembly 40, using fluxless scolding tin or not containing Si is organic bonding agent or by welding or welded seal.
Subsequently, the incident end of optical fiber 13 is pressed to and connect airtight, thereby get rid of extraneous gas, do not pollute the incident end of optical fiber 13 at light transmission parts 15.Under this state by machinery keep, bonding, scolding tin fixes.And then for trying to achieve more long-term reliability, using fluxless scolding tin or not containing Si is organic bonding agent or fixing by welding or welding.For the laser beam B from component internal effectively incides fiber core, in the light transmission parts 15 of assembly, after not carrying out the aligning of optical fiber 13 under the state of position contacting, the optical fiber front end is pressed to and is fixed in the outside 15a of light transmission parts 15 near the optical fiber front end.
Like this, according to the manufacture method of laser module of the present invention, optical fiber is installed in the degassing of carrying out before the assembly in the assembly and handles, and does not worry that therefore the gas that the degassing in the assembly comes off from the resin coating of optical fiber in handling can pollute component internal.
In addition, as the local Zoom Side sectional view of another execution mode of the laser module represented among Fig. 4, also can cover the light transmission parts of installing on the window 16 of assembly 40 15 erector (container) 25 chimeric with lasso 20 is installed like that.Container 25 can be provided on the assembly 40 in advance, can install in assembly 40 sealing backs.Install and use in scolding tin 18 black boies and carry out.By comprising that container 25 can be installed to assembly 40 with optical fiber 13 more simply.As shown in Figure 4, lasso 20 is embedded in the containers 40, the front end of optical fiber 13 is connected airtight after on the 15a of the outside of light transmission parts 15, with scolding tin 42 fixedly lasso 20 and container 40.Can use formation such as zirconia ceramics, metal, glass as lasso 20.
When the local Zoom Side sectional view of another execution mode of representing as Fig. 5, the end face 20a of lasso 20 are pressed to the face 15a ' of light transmission parts 15 ' for not containing air, preferably use ball milling.Like this, the optical fiber front end is pressed to and is connected airtight face 15a ' at light transmission parts 15 ', thereby gets rid of extraneous gas and do not pollute the incident end.As light transmission parts 15 ', use glass with convex surface as shown in Figure 5, on the Y direction, optical fiber 13 front ends are pressed to this convex surface 15a ', effective deaeration and connecting airtight when then connecting airtight.
In addition, Fig. 6 represents the local Zoom Side sectional view of another execution mode.Laser module and Fig. 4 of execution mode shown in Figure 6 are same, and assembly 40 has container 25, in addition, comprise the connector 45 chimeric with container 25 on the lasso 20.Substitute and use scolding tin fixed container 25 and 20, but connector 45 and container 25 is chimeric, lasso 20 is embedded in the container 25.Connector 45 comprises spring 46, from lasso 20 rear end side lasso 20 is pressed to light transmission parts 15 sides.Do not use scolding tin, so the installation of optical fiber 13 and take off very simple.
Gas as filling in the assembly 40 mainly is made of inert gas.As inert gas, can enumerate nitrogen, hydrocarbon gas etc.In addition, also can be the mist of at least a above gas of oxygen, halogen family gas and the halogen compounds of inert gas and the above concentration of 1ppm, for example, can use as with atmosphere purifying air with the nitrogen of ratio, oxygen mixed gas.
When sealing contains the oxygen of the above concentration of 1ppm in the atmosphere, deterioration that can more effective inhibition laser module.The raising that obtains this deterioration inhibition effect is that oxidation Decomposition is by the solids of the photolysis generation of hydrocarbon composition owing to seal the oxygen that contains in the atmosphere.
What is called halogen family gas is the halogen gas of chlorine (Cl2), fluorine gas (F2) etc., and so-called halogen compounds gas is the gas shape compound of the halogen atom of chloride atom (Cl), bromine atoms (Br), iodine atom (I), fluorine atom (F) etc.
As halogen compounds gas, can enumerate CF
3Cl, CF
2Cl
2, CFCl
3, CF
3Br, CCl
4, CCl
4-O
2, C
2F
4Cl
2, Cl-H
2, CF
3Br, PCl
3, CF
4, SF
6, NF
3, XeF
2, C
3F
8, CHF
3Deng, but the compound of fluorine or chlorine and carbon (C), nitrogen (N), sulphur (S), xenon (Xe) is better, and contain fluorine atoms is especially good.
Halogen family gas trace is also brought into play to worsen and is suppressed effect, but for significantly being worsened the inhibition effect, the content of halogen family gas is preferably more than the 1ppm.Obtaining such deterioration inhibition effect is the deposit that produces for the photolysis by the halogen family decomposing gas organic silicon compound gas that contains in the sealing atmosphere.
In addition, seal form as fixing, the assembly of the lens arra 11 of component internal and collector lens 12, as mentioned above, be organic bonding agent or fix or seal by using fluxless scolding tin or not containing Si, thereby more prevent control of dust by welding or welding.
As not containing Si is organic bonding agent, can to enumerate be for example special alicyclic epoxy compound of opening the record of 2001-177166 communique, have the compound of oxa-base and contain the cementability constituent of the salt photoreaction initiator of catalytic amount, is the cementability constituent that does not contain the silane coupling agent.
As fluxless scolding tin, can enumerate for example Sn-Pb, Sn-In, Sn-Pb-In, Au-Sn, Ag-Sn, Sn-Ag-In etc.The solder flux that contains in the common soldering tin material is the main cause of polluting, but uses fluxless scolding tin, does not worry producing polluter.Consider that environment uses Pb-free solder.
Welding can utilize commercially available seam heat sealing machine, for example the seam heat sealing machine made of Japanese ア PVC オ ニ Network company carries out.Specifically, make assembly load onto lid, by the seam heat sealing machine boundary portion of the lid of assembly and framework is applied high voltage and can carry out the frit seal of assembly.Fusion can be used commercially available fusion machine, and for example FITEL.S-2000 carries out.
The manufacture method of GaN based semiconductor laser diode of an example of the semiconductor Laser device that uses in the above-mentioned execution mode then is described.Fig. 7 is the sectional view of the manufacturing process of expression GaN based semiconductor laser diode.
Shown in Fig. 7 (a), by the organic metal vapor growth method trimethyl gallium (TMG) and ammonia are used for growth raw material, silane gas is used as n type impurity gas, cyclopentadienyl magnesium (Cp2Mg) as p type impurity gas, is pressed 20nm left and right sides thickness down for 500 ℃ in temperature and formed GaN resilient coating 122 on (0001) C surface sapphire substrate 121.Then, temperature is set to 1050 ℃ and the GaN layer 133 about 2 microns of growing.In addition, form SiO2 film 124, common photoetching process is used in painting erosion resistant agent 125 backs.
{。##.##1},
[formula 1]
<1?100>
Remove 3 microns wide SiO2 film 124 on the direction, form the line portion of the SiO2 film 124 of about 7 microns of width, thereby form the pattern in space under the line in the cycle about 10 microns.
Then as Fig. 7 (b) shown in, resist layer 125 and SiO2 film 124 as mask, are used the gas of chlorine family, by dry ecthing removal resilient coating 122 and GaN layer 123, above sapphire substrate 121, remove resist layer 125 and SiO2 film 124 afterwards.At this moment, sapphire substrate 121 can be etched slightly.
Then shown in Fig. 7 (c), select the GaN layer 126 of about 20 microns of growths.At this moment, by cross growth, finally synthetic strip, flattening surface.At this moment, the line portion top of the layer that is made of resilient coating 122 and GaN layer 123 produces and connects displacement, connects displacement but do not produce in the GaN layer 126 between this line portion.
Then on GaN layer 126, form SiO2 film 127, shown in Fig. 7 (d), will remove about 3 microns at the SiO2 film 127 of the spatial portion central authorities between the line portion of residual above-mentioned resilient coating 122 and GaN layer 123.
Then shown in Fig. 7 (e), growth temperature is made as 1050 ℃, GaN layer 128 is selected about 20 microns of growths.By the cross growth of this moment, finally synthetic strip makes flattening surface.
Then, form SiO2 film 129 on GaN layer 128, shown in Fig. 7 (f), the SiO2 film 129 that will be positioned at remaining SiO2 film 127 central authorities is removed about 3 microns, in addition, growth temperature is made as 1050 ℃, and GaN layer 130 is selected about 20 microns of growths.
Last as Fig. 7 (g) shown in, behind the n-GaN layer 131 about 100～200 microns of growing on the GaN substrate of making as mentioned above,,, make n-GaN layer 131 become n type GaN substrate 141 shown in Figure 8 up to GaN layer 130 from the sapphire substrate removal.Fig. 8 is the sectional view of a part of cutting preceding wafer open of the layer structure of explanation semiconductor Laser device.
Then as shown in Figure 8, the n-Al of 142,150 pairs of stacked n-GaN resilient coatings on the n type GaN substrate 141 of above-mentioned making
0.14Ga
0.86N (2.5nm)/GaN (2.5nm) superlattice covering 143, n-GaN optical waveguide layer 144, n-In
0.02Ga
0.98N (10.5nm)/n-In
0.15Ga
0.85The triple quantum well active layers 145 of N (3.5nm), p-Al
0.2Ga
0.8The p-Al that N carrier block layer 146, p-GaN optical waveguide layer are 147,150 couples
0.14Ga
0.86N (2.5nm)/GaN (2.5nm) superlattice covering 148, p-GaN contact layer 149.Here, Mg is used as p type impurity.For activating this Mg, use any method of the method for in nitrogen atmosphere, heat-treating after growing or in rich blanket of nitrogen, growing.
Then, make under the situation of lateral single mode semiconductor laser, for forming the transverse mode formula is one strip region, form the SiO2 mask 150 of opening with wide 1～3 micron strip by 100～500 microns spacings, making under the situation of horizontal multimodal wide semiconductor laser, by 100～500 microns spacings form have wide several～the SiO2 mask 150 of the opening of 50 microns strip.The horizontal multimodal wide semiconductor laser of～50 several from having micron wide strip region can obtain the output about hundreds of～2000mW.
Then cover the strip opening and form the strip p electrode 151 that Ni/Au constitutes.Then, grind substrate 141, form the n electrode 152 that Ti/Au constitutes, cut open carry out height reflection coating on the resonator face of formation, low reflection is coated with, afterwards, cut open again and finish the cavity with stated number, the semiconductor Laser device LD of resonator length.
When making the semiconductor Laser device of multi-cavity body, resonator length be 100～1500 microns better, be more preferably 400 microns, be that 1cm cuts open by the length of for example luminous point orientation, on the cavity face, carry out height reflection, low reflection coating, for example finish rod type element with 20 cavitys.When forming the multi-cavity body, the cavity number is implemented to cut open by the element width of luminous point orientation as required, forms element.
When forming the semiconductor Laser device of single cavity, by the element of cutting, form long 400 microns of resonator with equal 100～500 micron pitch of the formation spacing of strip region open with single cavity.
In laser module of the present invention, form as the semiconductor Laser device that holds in the assembly, except that the single cavity chip configuration that will disperse shown in the above-mentioned execution mode is the array-like, also can be by the array-like arrangement or the combination of single cavity semiconductor laser diode and multi-cavity body semiconductor Laser device etc. with 1 multi-cavity body semiconductor Laser device (LD rod), a plurality of multi-cavity body semiconductor Laser device.
Fig. 9 represents the plane graph of the laser module of second execution mode of the present invention.
The laser module of present embodiment is contained in single cavity GaN based semiconductor laser diode LD11～15 of arranging 5 fixing chip status on the heat block 70,72,5 optical fiber 73 of condenser lens array and in assembly 80 outsides its incident end is pressed to and connect airtight and be fixed in light transmission parts 85 in the light with band light transmission parts 85 penetrates the assembly 80 of window 86.This laser module is the laser module of optical fibre matrix type, and the laser beam that penetrates from semiconductor Laser device is coupled in the optical fiber that differs from one another.
In the laser module of present embodiment, assembly 80 is handled the back gas-tight seal in the degassing, and the fixing and assembly sealing of each parts is used fluxless scolding tin or do not contained Si to be organic binding agent or to be undertaken by welding or welding.Therefore, in assembly 80 inside, suppress to penetrate the end face control of dust to the light of the high semiconductor Laser device of optical density, the medial surface of the assembly of light transmission parts 85 is not the focal point of laser beam, so the dust collecting effect of low this face of optical density also is suppressed.And the incident end of optical fiber 73 connects airtight on light transmission parts 85, does not contact with atmosphere, does not pollute.As laser module integral body, suppress dust collecting effect, therefore can improve light output, obtain high reliability.
Figure 10 represents the plane graph of the laser module of the 3rd execution mode of the present invention.
The laser module of present embodiment holds 12,1 optical fiber 13 of CAN assembly 110, collector lens that inside has GaN based semiconductor laser diode and gas-tight seal in the light with band light transmission parts 15 penetrates the assembly 40 of window 16 presses to its incident end and connect airtight in assembly 40 outsides and be fixed in light transmission parts 15.Here, identical with the laser module of first execution mode key element adds same-sign and omits explanation.
CAN assembly 110, collector lens 12 configurations are fixed on each fixed part of substrate 105, and the feasible laser beam B that penetrates from semiconductor Laser device LD is converged in the outside 15a of light transmission parts 15 by collector lens 12.Each is fixed and uses fluxless scolding tin or do not contain Si is organic binding agent.Or fix by welding or welding.
In the present embodiment, semiconductor Laser device LD is included in the CAN assembly 110.The CAN assembly is handled for removing the inner volatile ingredient enforcement degassing, carries out gas-tight seal in addition.Semiconductor Laser device LD be included in that the degassing is handled and the CAN assembly 110 of gas-tight seal in, when 110 degassings of CAN assembly are handled, optical fiber 13 is not configured in the degassing processing unit, thereby is not subjected to from the influence of the gas of taking off of the resin coating of optical fiber 13.In addition, this CAN assembly 110 is included in assembly 40 inside of gas-tight seal, therefore more suppresses dust collecting effect, as laser module integral body, suppresses dust collecting effect, thus can improve light output, and obtain more high reliability.When this vibration wavelength of GaN based semiconductor laser diode that especially comprises above-mentioned manufacture method manufacturing is the high output semiconductor laser diode of 400nm band, because dust collecting effect is obvious, as present embodiment, the effect structure that includes semiconductor Laser device with assembly for 2 times is big.
In addition, form as the semiconductor Laser device that holds in the assembly, except that the single cavity chip configuration that will disperse shown in the above-mentioned execution mode is the array-like, also can be by the array-like arrangement or the combination of single cavity semiconductor laser diode and multi-cavity body semiconductor Laser device etc. with 1 multi-cavity body semiconductor Laser device (LD rod), a plurality of multi-cavity body semiconductor Laser device.
Claims (9)
1. laser module is characterized in that comprising:
On light ejaculation window, have the assembly light transmission parts, gas-tight seal;
At least one or a plurality of semiconductor Laser device in the said modules internal configurations;
Optical fiber in the said modules exterior arrangement;
Make the laser beam that penetrates from above-mentioned semiconductor Laser device converge in the light-gathering optics of inside on the outer surface of above-mentioned light transmission parts, that be configured in said modules,
Wherein, the incident end of above-mentioned optical fiber connects airtight and is fixed on the position of the above-mentioned laser beam of optically focused of outer surface of above-mentioned light transmission parts.
2. laser module according to claim 1 is characterized in that: the additional mark that is used for the position of definite above-mentioned laser beam of optically focused on the above-mentioned light transmission parts.
3. laser module according to claim 1 and 2 is characterized in that: the vibration wavelength of above-mentioned semiconductor Laser device is 350～500nm.
4. laser module according to claim 1 and 2 is characterized in that: above-mentioned optical fiber input end inserts in the lasso, and said modules comprises the erector chimeric with above-mentioned lasso.
5. laser module according to claim 1 and 2 is characterized in that: said modules inside is full of with inert gas.
6. laser module according to claim 5 is characterized in that: oxygen, halogen family gas and/or the halogen compounds gas of sneaking into the above concentration of 1ppm in the above-mentioned inert gas.
7. according to each described laser module in the claim 1,2,6, it is characterized in that: said modules is used fluxless scolding tin or do not contained Si is organic bonding agent or by welding or weld gas-tight seal.
8. according to each described laser module in the claim 1,2,6, it is characterized in that:
Above-mentioned semiconductor Laser device is any in the combination of the juxtaposed a plurality of single cavity semiconductor laser diodes of array-like, 1 multi-cavity body semiconductor Laser device, the juxtaposed a plurality of multi-cavity body semiconductor Laser devices of array-like, single cavity semiconductor laser diode and multi-cavity body semiconductor Laser device.
9. the manufacture method of a laser module, this laser module comprise laser beam that one or more semiconductor Laser devices, optical fiber, optically focused penetrate from above-mentioned semiconductor Laser device and the light-gathering optics that is coupled in the incident end of above-mentioned optical fiber, it is characterized in that:
But the light that has the light transmission parts that comprise that above-mentioned laser beam sees through on a wall penetrates the component internal of the gas-tight seal of window, dispose above-mentioned semiconductor Laser device and above-mentioned light-gathering optics, make above-mentioned laser beam condensation on the outer surface of above-mentioned light transmission parts;
To the processing that outgases of said modules inside;
After this degassing is handled, the gas-tight seal said modules;
Afterwards, for the incident end of above-mentioned laser beam optical coupled, the incident end of this optical fiber is connected airtight and be fixed on the above-mentioned outer surface of above-mentioned light transmission parts in above-mentioned optical fiber.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003024997 | 2003-01-31 | ||
| JP2003024997 | 2003-01-31 |
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|---|---|
| CN1519995A CN1519995A (en) | 2004-08-11 |
| CN100583576C true CN100583576C (en) | 2010-01-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200410002570A Expired - Lifetime CN100583576C (en) | 2003-01-31 | 2004-01-30 | Laser module and its manufacturing method |
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| Country | Link |
|---|---|
| KR (1) | KR20040070093A (en) |
| CN (1) | CN100583576C (en) |
| TW (1) | TW200417100A (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201177183Y (en) * | 2006-04-10 | 2009-01-07 | 马仁勇 | Optical diode light gathering device |
| JP4741534B2 (en) * | 2006-04-21 | 2011-08-03 | 富士フイルム株式会社 | Optical device |
| JP4741535B2 (en) * | 2006-04-21 | 2011-08-03 | 富士フイルム株式会社 | Optical device |
| US8345724B2 (en) * | 2008-10-27 | 2013-01-01 | Trumpf Photonics Inc. | Laser beam interleaving |
| CN102183825B (en) * | 2011-04-22 | 2013-03-20 | 深圳市恒宝通光电子股份有限公司 | Mode coupling light assembly |
| CN102891424B (en) * | 2011-08-25 | 2015-02-18 | 清华大学 | Amplifying system of parallel injection fibre power |
| CN102368106A (en) * | 2011-10-31 | 2012-03-07 | 中国科学院长春光学精密机械与物理研究所 | Multi-semiconductor laser optical fiber coupling device |
| KR101398020B1 (en) * | 2012-11-30 | 2014-05-30 | 주식회사 엘티에스 | Apparatus for sealing frit using laser |
| US10537965B2 (en) | 2013-12-13 | 2020-01-21 | Applied Materials, Inc. | Fiber array line generator |
| CN103744148B (en) * | 2014-02-10 | 2015-08-19 | 青岛海信宽带多媒体技术有限公司 | Optical assembly |
| CN107608038A (en) * | 2017-09-18 | 2018-01-19 | 青岛海信宽带多媒体技术有限公司 | A kind of optical secondary module and optical module |
-
2004
- 2004-01-30 TW TW093102076A patent/TW200417100A/en unknown
- 2004-01-30 CN CN200410002570A patent/CN100583576C/en not_active Expired - Lifetime
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| KR20040070093A (en) | 2004-08-06 |
| TW200417100A (en) | 2004-09-01 |
| CN1519995A (en) | 2004-08-11 |
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