CN100583552C - Frequency selector - Google Patents
Frequency selector Download PDFInfo
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- CN100583552C CN100583552C CN200610005391A CN200610005391A CN100583552C CN 100583552 C CN100583552 C CN 100583552C CN 200610005391 A CN200610005391 A CN 200610005391A CN 200610005391 A CN200610005391 A CN 200610005391A CN 100583552 C CN100583552 C CN 100583552C
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- frequency selection
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Abstract
This invention relates to a frequency selecting device including a metallic layer and a medium layer, in which, said metallic layer is placed at the surface of the medium layer and composed of one or multiple periodic arranged units, each one includes a pattern made up of one or multiple continuous lines taking a point adjacent to the center of the unit as the start point and rotate around it to the edge of the unit, in which, any continuous line has no cross point itself and the multiple lines do not have any other cross point apart from the start one and rotate symmetrically to it.
Description
Technical field
The present invention relates to a kind of frequency selection device, relate in particular to a kind of frequency selection device with a plurality of reflections and frequencies of transmission.
Background technology
We know that electromagnetic wave can walk around the barrier comparable with its operation wavelength very like a cork, so antenna substrate often wants the size of several wavelength can stop the radiation of antenna to the back side effectively, that is to say that traditional antenna substrate can only be operated in the wave-length coverage littler a lot of times than its size.
The frequency selection device that has occurred a kind of metal photonic crystal type now, it can be operated in than the big a lot of wave-length coverage of its size.This device is piled up by a metal level and a dielectric layer and forms, and has the pattern of being made up of the unit of one or more periodic arrangement at metal level, and each unit has somatotype (fractal) pattern of H type, and its pattern as shown in Figure 1.This structure can produce a series of high anti-and high saturating frequencies, just resonant frequency point.The wavelength of these frequency correspondences is suitable with the size of this structure, even can be about ten times of size of this structure.Simultaneously, this device has a plurality of high anti-and high saturating frequencies, that is to say, if do antenna substrate with this device, can work on a lot of Frequency points, and unlike traditional antenna substrate, have only a resonance frequency.
But this device still has the some shortcomings part, and the high anti-and high saturating Frequency point of each of this device is to be the logarithm exponential distribution, that is to say that its distribution is uneven, and it is bigger to be separated by between each resonant frequency point.Sometimes we expect a plurality of resonant frequency points in a certain frequency range, and for this structure, because its resonant frequency point is logarithm and distributes, may might not obtain a plurality of Frequency points in the frequency range that we want.And because H type structure itself is anisotropic, therefore, this structure is owing to the restriction of its structure itself, and it is for the electromagnetic wave of both direction polarization, and resonance frequency that is to say difference anisotropy to occur.But, in a lot of occasions, all require frequency selection device identical for the electromagnetic resonance frequency of the polarization of both direction, therefore, the frequency selection device of this H type pattern just can not be applied in these occasions.
Summary of the invention
In view of this, the invention provides a kind of frequency selection device, compare, can obtain more high anti-and high saturating Frequency point or frequency band with the frequency selection device of existing H type pattern.This frequency selection device can design to such an extent that to make resonant frequency point be that approximately linear distributes.Frequency selection device of the present invention can be designed to the electromagnetic resonance frequency of the polarization of both direction identical, just can obtain isotropic performance, can be used in the isotropic occasion of various needs.
Frequency selection device of the present invention comprises metal level and dielectric layer, this metal level is positioned on the surface of this dielectric layer, this metal level is made up of the unit of one or more periodic arrangement, each unit comprises the pattern that is made of one or more continuous line, this one or more continuous line is all near this unit center a bit being starting point, and around this some rotation, edge up to this unit, wherein, in each unit, any continuous line self does not have any intersection point, under the situation that comprises many continuous lines, except starting point, do not have other intersection points again between these the many continuous lines, and these many continuous lines are symmetrically distributed with respect to this starting point rotation.
Frequency selection device of the present invention has the following advantages:
1. by layout, can make each resonant frequency point is linear distribution;
2. can access more resonant frequency point or frequency band;
3. by layout, can obtain isotropic performance.
Frequency selection device of the present invention can be in following applications:
A) can be used for antenna substrate;
B) be used to the sub-wavelength filtering device of logical type and the delay line design of slow wave structure;
C) microwave absorbing material that is used for multifrequency point designs.
D) can be used for aerial array, improve the isolation between the bay.
When making antenna substrate with frequency selection device of the present invention, for some metal (as aluminium, silver etc.), when metal layer thickness during less than certain value, the frequency selection device of gained has higher transmittance for the light of visible waveband, and, have the characteristic that frequency is selected in microwave band.This device is attached on the devices such as mobile phone or display unit, can be suppressed at backward radiation on the high anti-frequency significantly, reduce the injury of electromagnetic radiation the user.
Description of drawings
Fig. 1 is the schematic diagram of pattern that shows the frequency selection device of existing H type pattern;
Fig. 2 A and Fig. 2 B are the schematic diagrames of pattern that shows first embodiment of frequency selection device of the present invention;
Fig. 3 is the schematic diagram of pattern that shows second embodiment of frequency selection device of the present invention;
Fig. 4 is the schematic diagram of pattern that shows the 3rd embodiment of frequency selection device of the present invention;
Fig. 5 is the result schematic diagram of plane wave transmission experiment of first embodiment of frequency selection device of the present invention;
Fig. 6 is the simulation curve figure of resonant frequency point of first embodiment of frequency selection device of the present invention;
Fig. 7 A and Fig. 7 B be first embodiment of frequency selection device of the present invention when the antenna substrate, the directional diagram of dipole antenna.
Embodiment
Describe the present invention below in conjunction with drawings and Examples.Fig. 2 A and Fig. 2 B are the schematic diagrames of pattern that shows first embodiment of frequency selection device of the present invention.The frequency selection device of the first embodiment of the present invention is made up of metal level and dielectric layer, the unit that comprises one or more periodic arrangement at metal level, each unit comprises the pattern that is made of one or more continuous line, this one or more continuous line all is made of the multistage line segment that separately head and the tail link to each other successively, becomes 90 degree in this multistage line segment between any two continuous line segments; In constituting the multistage line segment of arbitrary continuous line, for arbitrary line segment wherein, two line segments that link to each other with this line segment all are positioned at the same side of this line segment; When from starting point along arbitrary continuous line operation, the length of line segment of process increase progressively successively along traffic direction.
In the frequency selection device shown in Fig. 2 A, metal level is made up of the square shaped cells of a plurality of periodic arrangement, and in the frequency selection device shown in Fig. 2 B, metal level only comprises a square shaped cells.Comprise the pattern of being made up of four continuous lines in each square shaped cells, these four lines intersect at a bit of unit center, are center symmetry fully with this point.Shown in Fig. 2 A and 2B, these four lines are from this central point, extend along the direction on square four limits respectively, each turn 90 degrees counterclockwise after extending a segment distance, then along the turnover after the longer segment distance of direction ratio of elongation first segment distance, again to turning 90 degrees counterclockwise, and the like, the edge up to the unit.We turn to and are defined as one-level each 90 degree, and shown in Fig. 2 A and the 2B is 7 grades pattern.Specifically make what pattern, and extension distance how long turns to again at every turn, can design according to concrete requirement, to satisfy the needs of different application occasion.In the embodiment shown in Figure 2, these four lines are made of the remainder hollow out metal.
With frequency selection device shown in Figure 2, can obtain the high saturating and high anti-Frequency point that a plurality of approximately linears distribute, and, can obtain more high saturating and high anti-Frequency point compared with the frequency selection device of existing somatotype structure.From Fig. 2 A and Fig. 2 B as can be seen, the pattern of this frequency selection device itself is symmetrical, and is therefore identical for the electromagnetic resonance frequency of the polarization of both direction, is isotropism.Fig. 5 is the result schematic diagram with the plane wave transmission experiment of first embodiment of the frequency selection device shown in Fig. 2 B.This square shaped cells is of a size of 32mm * 32mm, and the thickness of dielectric layer is 0.8mm, and metal layer thickness is 0.035mm, and the width of four lines in the unit is about 1mm, and the width in the space between two adjacent lines also is about 1mm.In Fig. 5, continuous fine rule is the result of theoretical modeling, and the line that is linked to be by a plurality of data points is a result of experiment.As can be seen from Figure 5, this embodiment can obtain the anti-Frequency point of following height: 1.50,2.65,4.02,5.04,6.38,7.22 (GHz) can obtain the saturating Frequency point of following height simultaneously: 1.68,3.36,4.56,5.46,6.65,7.64 (GHz).As can be seen, these high anti-and high saturating Frequency points are linear distribution substantially.If change the part of four lines in each pattern of Fig. 2 A and Fig. 2 B into hollow out or fill with the medium of dielectric layer, other parts are formed with metal, so for the device that obtains like this, the anti-Frequency point of above-mentioned height has just become high Frequency point, and the saturating Frequency point of above-mentioned height has just become high anti-Frequency point.If the pattern shown in the infinite a plurality of Fig. 2 B of periodic arrangement, at this moment the device of gained can obtain the resonant frequency point of complete linear distribution.Fig. 6 is the simulation curve figure of resonant frequency point of first embodiment of frequency selection device of the present invention.As shown in Figure 6, by simulation calculation, can obtain the resonant frequency point of the pattern of 1-7 level, from simulation result as can be seen, progression is high more, each resonant frequency point that obtains just the closer to, we just can obtain many more resonant frequency points that we need in a frequency range.
About realizing the principle of sub-wavelength substrate reflection, can understand like this: for the miniature antenna (for example electric dipole) in a near field, unit in single the foregoing description one forms the surface current vibration of standing wave form owing to the strong coupling with this miniature antenna at the electrical resonance frequency place, the current oscillation of this induction can be an induced electricity dipole by equivalence ideally, the phasic difference between two electric dipoles
Be between one [0, π] on the occasion of, satisfy
K is a wave vector, and d is a distance between the two.In order to realize the unidirectional wave source of a cramped construction, can come by the mode of phase shifter and active feed, utilize suitable structure to be placed on the near-field region of antenna, if this structure is received the excitation of antenna, form electric resonance, then can form the reflection of sub-wavelength.Structure of the present invention is exactly to realize the structure of sub-wavelength reflection.
Fig. 7 A and Fig. 7 B be first embodiment of frequency selection device of the present invention when the antenna substrate, the directional diagram of dipole antenna.Fig. 7 A is the directional diagram of dipole antenna at 1.50GHz, and Fig. 7 B is the directional diagram of dipole antenna at 2.65GHz.What use in this experiment is the preceding dipole antenna of frequency selection device of the long parallel embodiment of being placed on of 16mm, and the distance between antenna and substrate is 15mm.From Fig. 7 A and 7B as can be seen, if with the frequency selection device of first embodiment as antenna substrate, on each the high anti-Frequency point shown in Fig. 7 A and Fig. 7 B, the back lobe of the directional diagram of antenna can be suppressed effectively, compare with the antenna of free space, with after this antenna substrate, high at least 3dB gains.When metal layer thickness during less than certain value (as about 30nm), for some metal (as aluminium, silver etc.), this antenna substrate has higher transmittance for the light of visible waveband, and in microwave band, still has the characteristic that frequency is selected, this antenna substrate is attached on the devices such as mobile phone or display unit, can be suppressed at backward radiation on the high anti-frequency significantly, reduce the injury of electromagnetic radiation the user.As seen, one of advantage of the present invention: antenna size also can reach the effect of ideally-reflecting during greater than single structure.
The foregoing description is a preferred embodiment of frequency selection device of the present invention, and frequency selection device of the present invention can also have other a lot of structures.Pattern in each unit is not limited to the shape of the first above-mentioned embodiment, Fig. 3, Fig. 4 are respectively the schematic diagrames of pattern that shows second, third embodiment of frequency selection device of the present invention, in a second embodiment, metal level is made up of single foursquare unit, comprise the pattern of being made up of two curves in this unit, the shape of these two curves meets Archimedes spiral and distributes.The equation of Archimedes spiral in polar coordinates is: ρ=ρ
0+ a φ.In the 3rd embodiment, metal level is made up of single foursquare unit, comprises the pattern of being made up of two curves in this unit, and the shape of these two curves meets equiangular spiral and distributes.The equation of equiangular spiral in polar coordinate system is: ρ=ρ
0e
A φIf do the plane transmission experiment, can obtain a plurality of high anti-and high saturating frequency bands with the frequency selection device shown in Fig. 3 and 4.In addition, according to the Ba Binie principle of reciprocity, also can adopt with the complementary structure of its structure for embodiment two and three frequency selection device and to realize, soon pattern part makes hollow out into or fills with the medium of dielectric layer, and remainder is made up of metal, if use R, T represents the reflectivity and the transmitance of original frequency selection device, the then reflectivity of the frequency selection device of this complementation and transmissivity R ', T ' satisfies R '=T; The relation of T '=R.
Frequency selection device of the present invention can also have a lot of variations example, on the surface of the opposite side of dielectric layer, a metal level can also be arranged, and this metal level can be fully by metal filled, also can by periodically or acyclic metal grate form.In addition, frequency selection device can also comprise the frequency selection device as two embodiment one, makes two dielectric layers wherein close mutually, in the middle of these two dielectric layers, a metal level at interval again, this metal level can also can be made up of periodic metal grate fully by metal filled.
Above-mentioned only is preferred embodiment of the present invention; be not to be used for limiting protection scope of the present invention; the professional in present technique field can carry out various modifications to embodiment under the prerequisite that does not depart from the scope of the present invention with spirit, this modification all belongs in the scope of the present invention.
Claims (11)
1. frequency selection device, it is characterized in that, comprise single-layer metal layer and dielectric layer, this metal level is positioned on the surface of this dielectric layer, this metal level is made up of the unit of one or more periodic arrangement, each unit comprises the pattern that is made of one or more continuous line, this one or more continuous line a bit is a starting point with this unit center all, and around this some extension, edge up to this unit, wherein, in each unit, any continuous line self does not have any intersection point, under the situation that comprises many continuous lines, except starting point, do not have other intersection points again between these the many continuous lines, and these many continuous lines are symmetrically distributed with respect to this starting point rotation.
2. frequency selection device as claimed in claim 1 is characterized in that, in each unit of described metal level, described one or more continuous line is made of metal, other part hollow outs.
3. frequency selection device as claimed in claim 1 is characterized in that, in each unit of described metal level, and described one or more continuous line hollow out, other parts are made of metal.
4. frequency selection device as claimed in claim 1 is characterized in that, in each unit of described metal level, described one or more continuous line is made of the medium of described dielectric layer, and other parts are made of metal.
5. frequency selection device as claimed in claim 1 is characterized in that, in each unit of described metal level, described one or more continuous line is an Archimedes spiral.
6. frequency selection device as claimed in claim 1 is characterized in that, in each unit of described metal level, described one or more continuous line is an equiangular spiral.
7. frequency selection device as claimed in claim 1, it is characterized in that, in each unit of described metal level, described one or more continuous line all is made of the multistage line segment that separately head and the tail link to each other successively, becomes 90 degree in this multistage line segment between any two continuous line segments; In constituting the multistage line segment of arbitrary continuous line, for arbitrary line segment wherein, two line segments that link to each other with this line segment all are positioned at the same side of this line segment; When from described starting point along arbitrary continuous line operation, the length of line segment of process increase progressively successively along traffic direction.
8. frequency selection device as claimed in claim 1 is characterized in that, also has a metal level on another surface of described dielectric layer, and this metal level is fully by metal filled.
9. frequency selection device as claimed in claim 1 is characterized in that, also has a metal level on another surface of described dielectric layer, and this metal level is made up of metal grate.
10. frequency selection device, it is characterized in that, comprise two frequency selection devices as claimed in claim 1, two described frequency selection devices are stacked, two described dielectric layers are close mutually, in the middle of two described dielectric layers, go back a metal level at interval, this metal level is fully by metal filled.
11. frequency selection device, it is characterized in that, comprise two frequency selection devices as claimed in claim 1, two described frequency selection devices are stacked, two described dielectric layers are close mutually, in the middle of two described dielectric layers, go back a metal level at interval, this metal level is made up of periodic metal grate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200610005391A CN100583552C (en) | 2005-08-19 | 2006-01-20 | Frequency selector |
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| CN200510028962.9 | 2005-08-19 | ||
| CN200510028962 | 2005-08-19 | ||
| CN200610005391A CN100583552C (en) | 2005-08-19 | 2006-01-20 | Frequency selector |
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| CN100583552C true CN100583552C (en) | 2010-01-20 |
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| CN102790273B (en) * | 2011-05-16 | 2014-12-24 | 深圳光启高等理工研究院 | Meta-material for realizing electromagnetic wave omnibearing radiation |
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Non-Patent Citations (6)
| Title |
|---|
| A frequency selective surface using apertuir-coupledmictostrip patches.. Pous R,Pozar D M.IEEE Trans.,Vol.39 No.12. 1991 |
| A frequency selective surface using apertuir-coupledmictostrip patches.. Pous R,Pozar D M.IEEE Trans.,Vol.39 No.12. 1991 * |
| 变形加载单元阵列的传输特性. 陈军文，黄培康，林桂森.系统工程与电子技术，第3期. 1990 |
| 变形加载单元阵列的传输特性. 陈军文，黄培康，林桂森.系统工程与电子技术，第3期. 1990 * |
| 红外与微波波段的周期电磁带隙结构. 卢俊，倪牟翠，孙连春.长春理工大学学报，第26卷第2期. 2003 |
| 红外与微波波段的周期电磁带隙结构. 卢俊，倪牟翠，孙连春.长春理工大学学报，第26卷第2期. 2003 * |
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